US20010003298A1 - Substrate support for plasma processing - Google Patents

Substrate support for plasma processing Download PDF

Info

Publication number
US20010003298A1
US20010003298A1 US09/329,020 US32902099A US2001003298A1 US 20010003298 A1 US20010003298 A1 US 20010003298A1 US 32902099 A US32902099 A US 32902099A US 2001003298 A1 US2001003298 A1 US 2001003298A1
Authority
US
United States
Prior art keywords
electrode
primary electrode
dielectric
substrate
conduit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
US09/329,020
Other versions
US6273958B2 (en
Inventor
Shamouil Shamouilian
Ananda H. Kumar
Siamak Salimian
Mahmoud Dahimene
Michael G. Chafin
Dennis S. Grimard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to US09/329,020 priority Critical patent/US6273958B2/en
Assigned to APPLIED MATERIALS, INC. reassignment APPLIED MATERIALS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: DAHIMENE, MAHMOUD
Assigned to APPLIED MATERIALS, INC. reassignment APPLIED MATERIALS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SALIMIAN, SIAMEK, KUMAR, ANANDA H., SHAMOUILIAN, SHAMOUIL, CHAFIN, MICHAEL G., GRIMARD, DENNIS S.
Priority to JP2001502150A priority patent/JP2003501829A/en
Priority to KR1020017015846A priority patent/KR20020011998A/en
Priority to PCT/US2000/015703 priority patent/WO2000075970A1/en
Priority to EP00942700A priority patent/EP1183716A1/en
Priority to TW089111357A priority patent/TW452841B/en
Publication of US20010003298A1 publication Critical patent/US20010003298A1/en
Publication of US6273958B2 publication Critical patent/US6273958B2/en
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32559—Protection means, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007—Holding mechanisms

Definitions

  • the invention relates to a support for supporting a substrate during plasma processing in a chamber.
  • Integrated circuits are fabricated by placing a substrate on a support in a chamber, introducing gas into the chamber, and energizing the gas by coupling RF energy to the gas to form a plasma.
  • the support typically comprises dielectric covering an electrode.
  • the gas in the chamber is energized by applying an RF voltage to the electrode and electrically grounding a facing conductor surface in the chamber.
  • the support comprises one or more conduits that extend through the dielectric and electrode, such as gas conduits for supplying heat transfer gas to the interface between the substrate and the dielectric, and other conduits to hold lift-pins that raise or lower the substrate onto the support.
  • the edge or extremity of the electrode in the support is desirable to extend the edge or extremity of the electrode in the support as close as possible to the conduits to allow a relatively uniform level of RF energy to be coupled to the overlying plasma—even across the electrode gap created by the conduits.
  • the proximity of the edge of the electrode to the conduit can result in electrical coupling of the RF energy from the electrode edge to the gas in the conduit. This RF coupling leads to ionization, arcing, and glow discharge of the gas in the conduit. This is undesirable because it causes sputtering, chemical erosion and thermal degradation of the conduit surfaces, the support, and even the backside of the overlying substrate.
  • Plasma formation in conduits is especially a problem for ceramic dielectric supports.
  • Ceramic supports made from alumina are being increasingly used due to their resistance to chemical erosion and their ability to withstand high temperatures.
  • Such ceramic supports typically have large diameter conduits because it is difficult to machine small diameter conduits in the brittle ceramic material.
  • a conduit having a large diameter provides a longer pathway in the gap of the conduit for the acceleration of ionized gas molecules. The longer pathway results in a larger number of energetic collisions between charged gas species and other gas molecules which results in avalanche breakdown and plasma formation in the conduit.
  • the present invention satisfies these needs by providing a support capable of supporting a substrate and forming a plasma of a gas in a chamber.
  • the support comprises a primary electrode that is chargeable to form the plasma of the gas in the chamber.
  • a dielectric covers the primary electrode, the dielectric having a surface adapted to receive the substrate and a conduit extending therethrough.
  • a thickness of dielectric between the primary electrode and the conduit is sufficiently large to reduce plasma formation in the conduit.
  • the support is particularly useful in a chamber comprising a gas distributor and an exhaust, in which a substrate held on the support is processed by a plasma of gas that is distributed by the gas distributor and exhausted by the exhaust.
  • the present invention is related to a support comprising first means for receiving the substrate and providing a first gas below the substrate, and second means for forming a plasma of second gas above the substrate and for reducing plasma formation in the first gas in the conduit during processing of the substrate on the support in the chamber.
  • the present invention is related to a support comprising a dielectric having a surface adapted to receive the substrate and a conduit.
  • a primary electrode is covered by the dielectric, the primary electrode being chargeable to form a plasma of gas in the chamber, and having an edge around the conduit.
  • a secondary electrode is also covered by the dielectric.
  • the secondary electrode is adapted to suppress coupling of energy from the edge of the primary electrode to gas in the conduit during processing of the substrate on the support in the chamber.
  • the present invention is directed to a substrate processing chamber comprising a gas distributor capable of providing gas into the chamber, a dielectric having a surface capable of receiving the substrate and having a conduit therethrough, a primary electrode and a secondary electrode below the dielectric; and a voltage supply adapted to charge the primary electrode with an RF potential to sustain a plasma of gas in the chamber, and electrically bias the secondary electrode relative to the primary electrode to reduce plasma formation in the conduit during processing of the substrate in the chamber.
  • the present invention is related to a method of fabricating a support for holding a substrate in a chamber.
  • the method comprising the steps of forming a dielectric covering an electrode, and forming a conduit in the dielectric so that a thickness of dielectric between an edge of the electrode and a surface of the conduit is sufficiently large to reduce plasma formation in the conduit when the electrode is charged by an RF voltage during processing of the substrate in the chamber.
  • the present invention is to a method of fabricating the support by the steps of forming a dielectric comprising a conduit, the dielectric covering a primary electrode and a secondary electrode.
  • the primary electrode is chargeable to sustain a plasma of gas in the chamber and the secondary electrode is shaped and sized to suppress coupling of energy from the edge of the electrode to gas in the conduit during processing of the substrate on the support in the chamber.
  • the present invention is also directed to a method of processing a substrate on a support in a chamber, the support comprising a dielectric having a surface capable of receiving the substrate, the dielectric covering a primary electrode and a secondary electrode and comprising a conduit that extends therethrough.
  • the substrate is placed on the surface of the dielectric and the primary electrode in the support is maintained at an RF potential to sustain a plasma of gas in the chamber.
  • the secondary electrode is electrically biased relative to the primary electrode to reduce plasma formation in the conduit during processing of the substrate in the chamber.
  • the step of electrically biasing the secondary electrode comprises the step of electrically grounding the secondary electrode.
  • FIG. 1 is a schematic sectional side view of a chamber comprising a support according to the present invention
  • FIG. 2 a is a schematic sectional side view of a support comprising a dielectric covering a primary electrode and having conduits;
  • FIG. 2 b is a schematic plan view of the support of FIG. 2 a showing the shape of the primary electrode and the dielectric separating the conduits from the primary electrode;
  • FIG. 3 is a schematic sectional side view of another version of a support comprising a dielectric covering a primary electrode and a secondary electrode that is shaped and sized to suppress coupling of RF energy from an edge of the primary electrode to gas in a conduit;
  • FIG. 4 is a schematic sectional side view of a support having a secondary electrode comprising a collar about an edge of a primary electrode;
  • FIG. 5 a is a schematic side view of a support having a plurality of secondary electrodes comprising collars positioned around each conduit;
  • FIG. 5 b is a schematic sectional top view of the support FIG. 5 a;
  • FIG. 6 is a schematic sectional side view of another version of a support showing a secondary electrode comprising a plurality of collars;
  • FIG. 7 is a schematic sectional side view of a version of a support showing a secondary electrode comprising a cylindrical collar below and adjacent to a perimeter of an edge of a primary electrode around a conduit;
  • FIG. 8 is a schematic sectional side view of another version of the cylindrical collar of FIG. 7;
  • FIG. 9 is a graph of equipotential lines for a conventional support comprising a primary electrode having an edge located 2.5 mm from a surface of a conduit;
  • FIG. 10 is a graph of equipotential lines for a support according to the present invention in which a thickness of dielectric between an edge of a primary electrode and a surface of a conduit is about 4 mm;
  • FIG. 11 is a graph of equipotential lines for a support according to the present invention having a primary electrode in which a thickness of dielectric between an edge of a primary electrode and a surface of a conduit is about 6 mm;
  • FIG. 12 is a graph of equipotential lines for a support according to the present invention having a primary electrode and a secondary electrode adapted to attract an electric field emanating from an edge of a charged primary electrode;
  • FIG. 13 is a graph of equipotential lines for a support according to the present invention having a primary electrode and a secondary electrode comprising a plurality of electrode segments.
  • FIG. 1 illustrates an apparatus 20 for processing a substrate 25 , such as a semiconductor wafer, in an energized gas or plasma.
  • the apparatus 20 comprises an enclosed chamber 30 having sidewalls 35 , upper walls 45 and a bottom portion 50 on which rests a support 55 for holding the substrate 25 .
  • the support 55 comprises a dielectric 60 covering a primary electrode 70 , the dielectric 60 having a surface 75 for receiving the substrate 25 thereon.
  • Process gas (or first gas) from a gas supply 82 is introduced into the chamber 30 through a gas distributor 80 having a plurality of nozzles 85 that are distributed around the substrate 25 .
  • the gas is energized to form a plasma by inductively or capacitively coupling RF energy into the chamber 30 .
  • the gas can be energized capacitively by applying an RF voltage from a voltage supply 95 between the primary electrode 70 in the support 55 and a partially facing conducting upper wall 45 of the chamber 30 .
  • the apparatus 20 also includes an inductor coil 100 adjacent to the chamber 30 that is powered by a coil power supply 105 to inductively couple RF energy into the chamber 30 .
  • the frequency of the RF power applied to the primary electrode 70 and to the inductor coil 100 is from about 50 kHz to about 60 MHZ.
  • the RF power applied to the primary electrode 70 is typically from about 10 to about 5000 Watts and the RF power applied to the inductor coil 100 is typically from about 750 to about 5000 Watts.
  • Spent gas and byproducts are exhausted from the chamber 30 through an exhaust system 110 which typically includes a vacuum pump 120 and a throttle valve 125 to control the pressure of gas in the chamber 30 .
  • the support 55 further comprises a base 130 for supporting the dielectric 60 .
  • the base 130 comprises channels 135 through which heat transfer fluid is circulated to heat or cool the substrate 25 .
  • the base 130 is shaped and sized to match the shape and size of the substrate 25 held on the support 55 to maximize transfer of heat between the base 130 and the substrate 25 .
  • the base 130 comprises a right cylindrical shape.
  • the base 130 comprises an electrically conducting material and is surrounded by an insulating shield or jacket 150 .
  • the base 130 is made out of a metal such as aluminum, and the jacket 150 is made from an insulating material, for example, a polymeric or a ceramic material, such as quartz.
  • the base 130 can also be electrically biased by the voltage supply 95 .
  • the dielectric 60 of the support 55 isolates the primary electrode 70 from the substrate 25 and the plasma in the chamber 30 .
  • the dielectric 60 can comprise a single layer of insulating material overlying the base 130 which serves as the primary electrode 70 (not shown), or a monolith in which the primary electrode 70 is embedded.
  • the dielectric 60 comprises a monolith in which the primary electrode 70 is embedded to substantially entirely isolate the primary electrode 70 from the plasma.
  • the dielectric 60 is made from a dielectric material that is resistant to erosion by the gas or plasma and capable of withstanding high temperatures.
  • the dielectric 60 comprises an absorption coefficient sufficiently low to allow the RF voltage applied to the primary electrode 70 to capacitively couple to the plasma in the chamber 30 .
  • Suitable dielectric materials include, for example, ceramic materials, such as Al 2 O 3 , AlN, BN, Si, SiC, Si 3 N 4 , TiO 2 , ZrO 2 , and mixtures and compounds thereof; and polymeric materials such as polyimide, polyamide, polyetherimide, polyketone, polyetherketone, polyacrylate, fluoroethylene, or mixtures thereof.
  • the thickness of the dielectric material overlying the primary electrode 70 is from about 100 ⁇ m to about 1000 ⁇ m to permit an RF voltage applied to the primary electrode 70 to capacitively couple to the plasma in the chamber 30 .
  • the dielectric 60 also comprises one or more conduits 160 extending through the dielectric 60 , such as for example, a gas conduit 170 provided to supply heat transfer gas (or second gas) to an interface between the surface 75 of the dielectric 60 and the substrate 25 .
  • the heat transfer gas typically helium, promotes heat transfer between the substrate 25 and the support 55 .
  • Other conduits 160 in the dielectric 60 enable lift-pins 175 to extend through the support 55 to lift or lower the substrate 25 off the surface 75 of the dielectric 60 for loading or unloading of the substrate 25 .
  • the conduits 160 have an internal surface 180 and are typically from about 10 to about 30 mm long—depending on the thickness of the dielectric 60 ; and have a polygonal or circular cross-section having a width or diameter of from about 0.1 to about 3 mm.
  • the primary electrode 70 is charged by an RF voltage to energize the plasma in the chamber 30 during processing of the substrate 25 .
  • the primary electrode 70 comprises an area that is sufficiently large to uniformly couple RF energy to the gas in the chamber 30 and across substantially the entire area of the substrate 25 .
  • the primary electrode 70 typically comprises an area of from about 30 to about 70,000 mm 2 .
  • the primary electrode 70 comprises edges 195 around apertures 185 that in turn extend around the conduits 160 in the dielectric 60 .
  • the primary electrode 70 can comprise a conductor layer, a mesh of conducting material, or a conducting pattern formed by doping the dielectric 60 .
  • the primary electrode 70 comprises a mesh or a plurality of interconnected groups of electrode segments fabricated from an electrically conducting material.
  • Suitable electrically conducting materials for the electrode include metal containing materials, such as for example, aluminum, copper, silver, gold, molybdenum, tantalum, titanium, or mixtures thereof.
  • the primary electrode 70 (which is also the power electrode) is capable of being electrically charged to serve as an electrostatic chuck to electrostatically hold the substrate 25 to the surface 75 of the dielectric 60 .
  • the primary electrode 70 comprises an area below the substrate 25 that is sufficiently large to electrostatically attract and hold the substrate 25 upon application of a DC voltage to the electrode 70 .
  • the primary electrode 70 can comprise either a monopolar or bipolar electrodes. During operation of a monopolar electrode, electrically charged plasma species in the chamber 30 cause electrical charge to accumulate in the substrate 25 , thereby providing the attractive electrostatic force that holds the substrate 25 to the dielectric 60 .
  • the primary electrode 70 comprises first and second groups of electrode segments (not shown) which are electrically isolated from one another and are sized and configured to operate as bipolar electrodes.
  • bipolar electrode segments are electrically biased relative to one another, the resultant electrostatic force between the electrode segments and the substrate 25 holds the substrate 25 to the dielectric 60 .
  • the thickness of a portion of the dielectric between an edge 195 of the primary electrode 70 and the surface 180 of the conduit 160 is made sufficiently large to reduce the incidence of plasma formation in the conduit 160 when the primary electrode 70 is charged by an RF voltage to form a plasma of a gas in the chamber 30 .
  • the thickness of dielectric material between the edge 195 of the primary electrode 70 and the conduit 160 can be increased either by reducing the cross-section of the conduits 160 or by forming the edge 195 of the primary electrode 70 that is further away from the surface 180 of the conduit 160 .
  • the size of the conduits 160 generally depends upon other design parameters, such as dimensions of the lift-pins 175 or the rate at which heat transfer gas must be supplied.
  • edge 195 of the primary electrode 70 at a predetermined distance away from the surface 180 of the conduit 160 serves to increase the thickness of dielectric material between the edge 195 of the primary electrode 70 and the conduit 160 to a thickness that is sufficiently large to reduce plasma formation in the conduit 160 .
  • the desired thickness of the gap between the electrode edge 195 and the conduit 160 depends on the RF and DC power levels applied to the primary electrode 70 , the pressure of gas in the conduit 160 and the dimensions of the conduit 160 . If the dielectric thickness between the edge 195 of the primary electrode 70 and the surface 180 of the conduit 160 is too small, plasma formation can occur within the conduit 160 thereby damaging the support 55 and overlying substrate 25 .
  • a sufficient thickness of dielectric material is from about 2 times to about 200 times the thickness of the portion of the dielectric 60 that overlies the primary electrode 70 .
  • thickness of the dielectric between the edge 195 of the primary electrode 70 and the surface 180 of the conduit 160 is at least about 3 mm, and more preferably less than about 10 mm.
  • the support 55 further comprises a counter or secondary electrode 210 covered by or embedded in the dielectric 60 .
  • the secondary electrode 210 is adapted to attract an electric field emanating from the edge 195 of the primary electrode 70 and away from the conduit 160 during processing of the substrate 25 .
  • the secondary electrode 210 comprises a perimeter 225 adjacent to and extending along the edge 195 of the primary electrode 70 that circumvents a conduit 160 .
  • the secondary electrode 210 is electrically biased relative to the primary electrode 70 to reduce the incidence of plasma formation in the conduit 160 during processing of the substrate 25 .
  • the secondary electrode can be electrically grounded.
  • the secondary electrode 210 has a surface comprising an area that is smaller than the area of the primary electrode 70 to reduce wastage of power from the excessive coupling of RF and DC electrical energy from the primary electrode 70 to the secondary electrode 210 .
  • the secondary electrode 210 comprises a total area that is less than about 5% of the total area of the primary electrode 70 . More preferably, the secondary electrode 210 comprises a total area of about 1000 to about 2000 mm 2 . The total area is the area of an entire surface of the electrode or a sum of the area of the surfaces of a plurality of electrode segments.
  • the secondary electrode 210 is not in the same plane (non-coplanar) as the primary electrode 70 to further increase the separation distance or gap between the secondary electrode 210 and the primary electrode 70 . While a larger gap further reduces leakage of RF or DC energy from the primary electrode 70 ; too large a gap can cause the secondary electrode to be ineffective.
  • the secondary electrode 210 is also below the level of the primary electrode 70 to further reduce the attenuation of energy applied to electrode 210 .
  • the secondary electrode 210 can comprise a thin conducting strip that forms a ring or a collar 220 lying below the level, and about the edge 195 , of the primary electrode 70 .
  • the secondary electrode 210 can comprise a conductor layer, a mesh of conducting material, or a conducting pattern of dopant in the dielectric 60 , and the secondary electrode 210 can be made from the same materials as the primary electrode 70
  • the secondary electrode 210 is shaped as one or more collars 230 that are disposed about and adjacent to the conduits 160 .
  • Each collar 230 comprises an inner diameter that is larger than the apertures 185 of the primary electrode 70 and an outer diameter that is sufficiently large to be close to and attract the electric field emanating out from the edge 195 of the primary electrode 70 .
  • This version reduces plasma formation in the conduits 160 while also reducing wastage of electrical energy from coupling of RF and DC energy from the primary electrode 70 to the secondary electrode 210 because of the relatively small size of the collar 230 .
  • the secondary electrode 210 comprises a plurality of primary electrode segments 220 a, b.
  • the electrode segments 220 a, b are positioned a different distances from the primary electrode 70 and the surface 180 of the conduit 160 .
  • This version is particularly useful for embodiments in which the support 55 is supported on a base 130 having a dielectric plug 235 at a lower end of the conduit 160 , as shown in FIG. 6.
  • the dielectric plug 235 is made from a polymeric or ceramic material and prevents the primary electrode 70 or the substrate 25 from shorting to the base 130 when a plasma forms in the conduit 160 .
  • the heat transfer gas passes through a narrow gap 245 between the base 130 and the dielectric plug 235 to enter the conduit 160 .
  • the secondary electrode 210 comprises a cylindrical collar 220 c disposed about the conduit, and lying below and adjacent to the edge 195 of the primary electrode 70 .
  • the relatively large surface area of the collar 220 c parallel to the conduit 160 suppresses RF coupling from the edge 195 of the primary electrode 70 to the gas in the conduit 160 and substantially eliminates plasma formation in the conduit 160 during processing of the substrate 25 .
  • the collar 220 c can be comprise an inner diameter larger than the aperture 185 of the primary electrode 70 so that the collar 220 c is covered by the primary electrode 70 , as shown in FIG. 7.
  • the collar 220 c can comprise an outer diameter smaller than the aperture 185 as shown in FIG. 8. The increased separation of the collar from the primary electrode 70 further reduces leakage of RF or DC current from the primary electrode 70 .
  • the secondary electrode 210 is electrically biased relative to the primary electrode 70 by a bias voltage supply 260 . Biasing the secondary electrode 210 enables the strength with which it attracts the electric field emanating from the primary electrode 70 to be changed during processing of the substrate 25 .
  • the secondary electrode 210 is electrically biased to reduce wastage of power caused by coupling of RF and DC energy from the primary electrode 70 to the secondary electrode 210 while also reducing the formation of plasma in the conduits 160 . This is particularly desirable for processes in which a relatively low voltage is applied to the primary electrode 70 . In these processes, the potential for plasma formation in the conduits 160 is low and the loss of power to a grounded secondary electrode 210 due RF and DC leakage current can be significant.
  • biasing the secondary electrode 210 to a voltage above ground potential reduces the difference in potential between the secondary electrode 210 and primary electrode 70 , both reduces wastage of power from the primary electrode 70 and plasma formation in the conduits 160 .
  • the secondary electrode 210 is biased with a voltage of from about ⁇ 1000 to about +1000 volts which can be DC or RF voltage.
  • the secondary electrode 210 cal also comprise a plurality of electrode segments that are each at a different distance from the primary electrode 70 or from the surface 180 of the conduit 160 and that are each biased to a different electrical potential level. This is particularly useful for a chamber 30 in which different RF voltages are applied to the primary electrode 70 and the base 130 .
  • the potential applied to each electrode segment is selected to substantially eliminate plasma formation in the conduit 160 during processing of the substrate 25 while reducing loss of power due to RF leakage current.
  • FIGS. 9 to 13 The horizontal axis of the graphs represents distance away from the surface 180 of the conduit 160 .
  • the vertical axis represents the distance from the base 130 of the support 55 .
  • 9 to 13 can be viewed as a partial sectional side view of the dielectric 60 with the vertical axis representing a section of the surface 180 of a conduit 160 , and the horizontal axis representing a section of the lower surface of the dielectric 60 . Furthermore, the strength of an electric field (not shown) extending between any two equipotential lines is directly proportional to the difference in potential between the equipotential lines and inversely proportional to the distance between them. Thus, in FIGS. 9 to 13 the closer together the equipotential lines, the stronger the electric field at that point.
  • FIG. 9 shows the equipotential lines for a conventional support 55 comprising a dielectric 60 covering a primary electrode 70 that extends to within about 2.5 mm of the surface 180 of the conduit 160 .
  • the substrate 25 was assumed to be at a potential of about 500 volts DC, the base 130 was grounded, and 1000 volts peak to peak was applied to the primary electrode 70 .
  • the primary electrode 70 can be thought of as a line source that originates at a point 2.5 mm from the vertical axis (2.5 mm from the surface 180 of the conduit) and about 10 mm from the horizontal axis (substantially at the top of the dielectric 60 ), and extends parallel to the horizontal axis.
  • the clustering of equipotential lines near the top of the surface 180 of the conduit 160 (represented by the vertical axis from 7 to 10 mm) suggest a strong electric field that would lead to plasma formation in the conduit 160 .
  • FIG. 10 shows the equipotential lines for a support 55 according to the present invention in which the thickness of dielectric material between the primary electrode 70 and the surface 180 of the conduit 160 is selected to be about 4 mm.
  • the substrate 25 was assumed to be at a potential of about 500 volts DC, the base 130 was grounded, and 1000 volts peak to peak were applied to the primary electrode 70 .
  • the equipotential lines intersecting the surface 180 of the conduit 160 are spread out suggesting a weaker electric field at the surface 180 of the conduit 160 , and a reduced incidence of plasma formation in the conduit 160 .
  • FIG. 11 shows the equipotential lines for a support 55 comprising a thickness of dielectric material between the primary electrode 70 and the surface 180 of the conduit 160 of about 6 mm.
  • the substrate 25 was assumed to be at a potential of about 500 volts DC, the base 130 was grounded, and 1000 volts peak to peak were applied to the primary electrode 70 .
  • the equipotential lines intersecting the surface 180 of the conduit 160 are even more spread out suggesting a still weaker electric field and a further reduced incidence of plasma formation in the conduit 160 .
  • FIG. 12 shows the equipotential lines for a support 55 in which the thickness of dielectric material between the primary electrode 70 and the surface 180 of the conduit 160 is selected to be about 4 mm, and the support 55 further comprises a secondary electrode 210 below and near the edge 195 of the primary electrode 70 as shown in FIG. 7.
  • the substrate 25 , the base 130 , and the secondary electrode 210 were assumed to be at ground potential (0 volts), and 700 volts RF were assumed to be applied to the primary electrode 70 .
  • the grounded secondary electrode 210 attracts the electric field emanating from the edge 195 of the charged primary electrode 70 away from the conduit 160 .
  • the coupling of RF energy emanating from the edge 195 of the primary electrode 70 , to a gas in the conduit 160 is reduced and plasma formation in the conduit 160 is substantially eliminated.
  • FIG. 13 shows the equipotential lines for a support 55 having a secondary electrode 210 comprising a plurality of collars 220 a, b as shown in FIG. 6.
  • the first collar 220 a attracts electric fields that emanate from the primary electrode 70 and the second collar 220 b prevents the electric fields from penetrating into a gap 245 between the base 130 and a dielectric plug 235 and forming a plasma therein.
  • the substrate 25 was assumed to be at 500 volts DC and the base at a potential of about ⁇ 2500 volts peak to peak.
  • the secondary electrode 210 can comprise conducting portions of the surface 180 of the conduits 160 themselves. Therefore, the spirit and scope of the appended claims should not be limited to the description of the preferred versions contained herein.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

A support 55 comprises a dielectric 60 covering a primary electrode 70, the dielectric 60 having a surface 75 adapted to receive a substrate 25 and a conduit 160 that extends through the dielectric 60. The thickness of a portion of the dielectric 60 between an edge 195 of the primary electrode 70 and a surface 180 of the conduit 160 is sufficiently large to reduce the incidence of plasma formation in the conduit 160 when the primary electrode 70 is charged by an RF voltage to form a plasma of gas in the chamber 30 during processing of the substrate 25.

Description

    BACKGROUND
  • The invention relates to a support for supporting a substrate during plasma processing in a chamber. [0001]
  • Integrated circuits are fabricated by placing a substrate on a support in a chamber, introducing gas into the chamber, and energizing the gas by coupling RF energy to the gas to form a plasma. The support typically comprises dielectric covering an electrode. The gas in the chamber is energized by applying an RF voltage to the electrode and electrically grounding a facing conductor surface in the chamber. The support comprises one or more conduits that extend through the dielectric and electrode, such as gas conduits for supplying heat transfer gas to the interface between the substrate and the dielectric, and other conduits to hold lift-pins that raise or lower the substrate onto the support. It is desirable to extend the edge or extremity of the electrode in the support as close as possible to the conduits to allow a relatively uniform level of RF energy to be coupled to the overlying plasma—even across the electrode gap created by the conduits. However, the proximity of the edge of the electrode to the conduit can result in electrical coupling of the RF energy from the electrode edge to the gas in the conduit. This RF coupling leads to ionization, arcing, and glow discharge of the gas in the conduit. This is undesirable because it causes sputtering, chemical erosion and thermal degradation of the conduit surfaces, the support, and even the backside of the overlying substrate. [0002]
  • Plasma formation in conduits is especially a problem for ceramic dielectric supports. Ceramic supports made from alumina are being increasingly used due to their resistance to chemical erosion and their ability to withstand high temperatures. However, such ceramic supports typically have large diameter conduits because it is difficult to machine small diameter conduits in the brittle ceramic material. A conduit having a large diameter provides a longer pathway in the gap of the conduit for the acceleration of ionized gas molecules. The longer pathway results in a larger number of energetic collisions between charged gas species and other gas molecules which results in avalanche breakdown and plasma formation in the conduit. [0003]
  • Thus there is a need for a support that reduces the incidence of arcing, glow discharge, or plasma formation in conduits that extend through the support during processing of a substrate in the chamber. There is also a need for a support that exhibits reduced erosion and thermal degradation in the chamber. It is further desirable to have a support that provides a more uniform plasma sheath across the surface of the substrate. [0004]
    • SUMMARY
  • The present invention satisfies these needs by providing a support capable of supporting a substrate and forming a plasma of a gas in a chamber. The support comprises a primary electrode that is chargeable to form the plasma of the gas in the chamber. A dielectric covers the primary electrode, the dielectric having a surface adapted to receive the substrate and a conduit extending therethrough. A thickness of dielectric between the primary electrode and the conduit is sufficiently large to reduce plasma formation in the conduit. The support is particularly useful in a chamber comprising a gas distributor and an exhaust, in which a substrate held on the support is processed by a plasma of gas that is distributed by the gas distributor and exhausted by the exhaust. [0005]
  • In another version, the present invention is related to a support comprising first means for receiving the substrate and providing a first gas below the substrate, and second means for forming a plasma of second gas above the substrate and for reducing plasma formation in the first gas in the conduit during processing of the substrate on the support in the chamber. [0006]
  • In yet another version, the present invention is related to a support comprising a dielectric having a surface adapted to receive the substrate and a conduit. A primary electrode is covered by the dielectric, the primary electrode being chargeable to form a plasma of gas in the chamber, and having an edge around the conduit. A secondary electrode is also covered by the dielectric. Preferably, the secondary electrode is adapted to suppress coupling of energy from the edge of the primary electrode to gas in the conduit during processing of the substrate on the support in the chamber. [0007]
  • In still another version, the present invention is directed to a substrate processing chamber comprising a gas distributor capable of providing gas into the chamber, a dielectric having a surface capable of receiving the substrate and having a conduit therethrough, a primary electrode and a secondary electrode below the dielectric; and a voltage supply adapted to charge the primary electrode with an RF potential to sustain a plasma of gas in the chamber, and electrically bias the secondary electrode relative to the primary electrode to reduce plasma formation in the conduit during processing of the substrate in the chamber. [0008]
  • In another aspect, the present invention is related to a method of fabricating a support for holding a substrate in a chamber. The method comprising the steps of forming a dielectric covering an electrode, and forming a conduit in the dielectric so that a thickness of dielectric between an edge of the electrode and a surface of the conduit is sufficiently large to reduce plasma formation in the conduit when the electrode is charged by an RF voltage during processing of the substrate in the chamber. [0009]
  • In yet another aspect, the present invention is to a method of fabricating the support by the steps of forming a dielectric comprising a conduit, the dielectric covering a primary electrode and a secondary electrode. The primary electrode is chargeable to sustain a plasma of gas in the chamber and the secondary electrode is shaped and sized to suppress coupling of energy from the edge of the electrode to gas in the conduit during processing of the substrate on the support in the chamber. [0010]
  • The present invention is also directed to a method of processing a substrate on a support in a chamber, the support comprising a dielectric having a surface capable of receiving the substrate, the dielectric covering a primary electrode and a secondary electrode and comprising a conduit that extends therethrough. In the method, the substrate is placed on the surface of the dielectric and the primary electrode in the support is maintained at an RF potential to sustain a plasma of gas in the chamber. The secondary electrode is electrically biased relative to the primary electrode to reduce plasma formation in the conduit during processing of the substrate in the chamber. Preferably, the step of electrically biasing the secondary electrode comprises the step of electrically grounding the secondary electrode. [0011]
    • DRAWINGS
  • These features, aspects, and advantages of the present invention will become better understood with regard to the following description, appended claims, and accompanying drawings which illustrate examples of the invention, where: [0012]
  • FIG. 1 is a schematic sectional side view of a chamber comprising a support according to the present invention; [0013]
  • FIG. 2[0014] a is a schematic sectional side view of a support comprising a dielectric covering a primary electrode and having conduits;
  • FIG. 2[0015] b is a schematic plan view of the support of FIG. 2a showing the shape of the primary electrode and the dielectric separating the conduits from the primary electrode;
  • FIG. 3 is a schematic sectional side view of another version of a support comprising a dielectric covering a primary electrode and a secondary electrode that is shaped and sized to suppress coupling of RF energy from an edge of the primary electrode to gas in a conduit; [0016]
  • FIG. 4 is a schematic sectional side view of a support having a secondary electrode comprising a collar about an edge of a primary electrode; [0017]
  • FIG. 5[0018] a is a schematic side view of a support having a plurality of secondary electrodes comprising collars positioned around each conduit;
  • FIG. 5[0019] b is a schematic sectional top view of the support FIG. 5a;
  • FIG. 6 is a schematic sectional side view of another version of a support showing a secondary electrode comprising a plurality of collars; [0020]
  • FIG. 7 is a schematic sectional side view of a version of a support showing a secondary electrode comprising a cylindrical collar below and adjacent to a perimeter of an edge of a primary electrode around a conduit; [0021]
  • FIG. 8 is a schematic sectional side view of another version of the cylindrical collar of FIG. 7; [0022]
  • FIG. 9 is a graph of equipotential lines for a conventional support comprising a primary electrode having an edge located 2.5 mm from a surface of a conduit; [0023]
  • FIG. 10 is a graph of equipotential lines for a support according to the present invention in which a thickness of dielectric between an edge of a primary electrode and a surface of a conduit is about 4 mm; [0024]
  • FIG. 11 is a graph of equipotential lines for a support according to the present invention having a primary electrode in which a thickness of dielectric between an edge of a primary electrode and a surface of a conduit is about [0025] 6 mm;
  • FIG. 12 is a graph of equipotential lines for a support according to the present invention having a primary electrode and a secondary electrode adapted to attract an electric field emanating from an edge of a charged primary electrode; and [0026]
  • FIG. 13 is a graph of equipotential lines for a support according to the present invention having a primary electrode and a secondary electrode comprising a plurality of electrode segments. [0027]
    • DESCRIPTION
  • FIG. 1 illustrates an [0028] apparatus 20 for processing a substrate 25, such as a semiconductor wafer, in an energized gas or plasma. Generally, the apparatus 20 comprises an enclosed chamber 30 having sidewalls 35, upper walls 45 and a bottom portion 50 on which rests a support 55 for holding the substrate 25. The support 55 comprises a dielectric 60 covering a primary electrode 70, the dielectric 60 having a surface 75 for receiving the substrate 25 thereon. Process gas (or first gas) from a gas supply 82 is introduced into the chamber 30 through a gas distributor 80 having a plurality of nozzles 85 that are distributed around the substrate 25. The gas is energized to form a plasma by inductively or capacitively coupling RF energy into the chamber 30. For example, the gas can be energized capacitively by applying an RF voltage from a voltage supply 95 between the primary electrode 70 in the support 55 and a partially facing conducting upper wall 45 of the chamber 30. The apparatus 20 also includes an inductor coil 100 adjacent to the chamber 30 that is powered by a coil power supply 105 to inductively couple RF energy into the chamber 30. Typically the frequency of the RF power applied to the primary electrode 70 and to the inductor coil 100 is from about 50 kHz to about 60 MHZ. The RF power applied to the primary electrode 70 is typically from about 10 to about 5000 Watts and the RF power applied to the inductor coil 100 is typically from about 750 to about 5000 Watts. Spent gas and byproducts are exhausted from the chamber 30 through an exhaust system 110 which typically includes a vacuum pump 120 and a throttle valve 125 to control the pressure of gas in the chamber 30.
  • Generally, the [0029] support 55 further comprises a base 130 for supporting the dielectric 60. Preferably, the base 130 comprises channels 135 through which heat transfer fluid is circulated to heat or cool the substrate 25. More preferably, the base 130 is shaped and sized to match the shape and size of the substrate 25 held on the support 55 to maximize transfer of heat between the base 130 and the substrate 25. For example, for a substrate 25 having a circular or disk shape, the base 130 comprises a right cylindrical shape. Typically, the base 130 comprises an electrically conducting material and is surrounded by an insulating shield or jacket 150. The base 130 is made out of a metal such as aluminum, and the jacket 150 is made from an insulating material, for example, a polymeric or a ceramic material, such as quartz. Optionally, the base 130 can also be electrically biased by the voltage supply 95.
  • The dielectric [0030] 60 of the support 55 isolates the primary electrode 70 from the substrate 25 and the plasma in the chamber 30. The dielectric 60 can comprise a single layer of insulating material overlying the base 130 which serves as the primary electrode 70 (not shown), or a monolith in which the primary electrode 70 is embedded. Preferably, as shown in FIG. 1, the dielectric 60 comprises a monolith in which the primary electrode 70 is embedded to substantially entirely isolate the primary electrode 70 from the plasma. The dielectric 60 is made from a dielectric material that is resistant to erosion by the gas or plasma and capable of withstanding high temperatures. The dielectric 60 comprises an absorption coefficient sufficiently low to allow the RF voltage applied to the primary electrode 70 to capacitively couple to the plasma in the chamber 30. Suitable dielectric materials include, for example, ceramic materials, such as Al2O3, AlN, BN, Si, SiC, Si3N4, TiO2, ZrO2, and mixtures and compounds thereof; and polymeric materials such as polyimide, polyamide, polyetherimide, polyketone, polyetherketone, polyacrylate, fluoroethylene, or mixtures thereof. The thickness of the dielectric material overlying the primary electrode 70 is from about 100 μm to about 1000 μm to permit an RF voltage applied to the primary electrode 70 to capacitively couple to the plasma in the chamber 30.
  • The dielectric [0031] 60 also comprises one or more conduits 160 extending through the dielectric 60, such as for example, a gas conduit 170 provided to supply heat transfer gas (or second gas) to an interface between the surface 75 of the dielectric 60 and the substrate 25. The heat transfer gas, typically helium, promotes heat transfer between the substrate 25 and the support 55. Other conduits 160 in the dielectric 60 enable lift-pins 175 to extend through the support 55 to lift or lower the substrate 25 off the surface 75 of the dielectric 60 for loading or unloading of the substrate 25. The conduits 160 have an internal surface 180 and are typically from about 10 to about 30 mm long—depending on the thickness of the dielectric 60; and have a polygonal or circular cross-section having a width or diameter of from about 0.1 to about 3 mm.
  • The [0032] primary electrode 70 is charged by an RF voltage to energize the plasma in the chamber 30 during processing of the substrate 25. The primary electrode 70 comprises an area that is sufficiently large to uniformly couple RF energy to the gas in the chamber 30 and across substantially the entire area of the substrate 25. For example, for a circular substrate 25 having a diameter of 200 to 300 mm (8 to 12 inches), the primary electrode 70 typically comprises an area of from about 30 to about 70,000 mm2. In addition, as shown in FIGS. 2a and 2 b, the primary electrode 70 comprises edges 195 around apertures 185 that in turn extend around the conduits 160 in the dielectric 60. The primary electrode 70 can comprise a conductor layer, a mesh of conducting material, or a conducting pattern formed by doping the dielectric 60. Preferably, the primary electrode 70 comprises a mesh or a plurality of interconnected groups of electrode segments fabricated from an electrically conducting material. Suitable electrically conducting materials for the electrode include metal containing materials, such as for example, aluminum, copper, silver, gold, molybdenum, tantalum, titanium, or mixtures thereof.
  • Optionally, the primary electrode [0033] 70 (which is also the power electrode) is capable of being electrically charged to serve as an electrostatic chuck to electrostatically hold the substrate 25 to the surface 75 of the dielectric 60. The primary electrode 70 comprises an area below the substrate 25 that is sufficiently large to electrostatically attract and hold the substrate 25 upon application of a DC voltage to the electrode 70. The primary electrode 70 can comprise either a monopolar or bipolar electrodes. During operation of a monopolar electrode, electrically charged plasma species in the chamber 30 cause electrical charge to accumulate in the substrate 25, thereby providing the attractive electrostatic force that holds the substrate 25 to the dielectric 60. In bipolar mode, the primary electrode 70 comprises first and second groups of electrode segments (not shown) which are electrically isolated from one another and are sized and configured to operate as bipolar electrodes. When bipolar electrode segments are electrically biased relative to one another, the resultant electrostatic force between the electrode segments and the substrate 25 holds the substrate 25 to the dielectric 60.
  • In one aspect of the present invention, the thickness of a portion of the dielectric between an [0034] edge 195 of the primary electrode 70 and the surface 180 of the conduit 160 is made sufficiently large to reduce the incidence of plasma formation in the conduit 160 when the primary electrode 70 is charged by an RF voltage to form a plasma of a gas in the chamber 30. The thickness of dielectric material between the edge 195 of the primary electrode 70 and the conduit 160 can be increased either by reducing the cross-section of the conduits 160 or by forming the edge 195 of the primary electrode 70 that is further away from the surface 180 of the conduit 160. The size of the conduits 160 generally depends upon other design parameters, such as dimensions of the lift-pins 175 or the rate at which heat transfer gas must be supplied. However, forming the edge 195 of the primary electrode 70 at a predetermined distance away from the surface 180 of the conduit 160 serves to increase the thickness of dielectric material between the edge 195 of the primary electrode 70 and the conduit 160 to a thickness that is sufficiently large to reduce plasma formation in the conduit 160. The desired thickness of the gap between the electrode edge 195 and the conduit 160 depends on the RF and DC power levels applied to the primary electrode 70, the pressure of gas in the conduit 160 and the dimensions of the conduit 160. If the dielectric thickness between the edge 195 of the primary electrode 70 and the surface 180 of the conduit 160 is too small, plasma formation can occur within the conduit 160 thereby damaging the support 55 and overlying substrate 25. However, when the dielectric thickness is too large, the primary electrode 70 becomes too small and insufficient RF energy is coupled to the gas above the conduits 160 resulting in formation of a weak spot in the plasma at this region of the substrate 25 that results in poor processing of this region. In addition, if the primary electrode 70 is charged with a DC voltage (to serve as an electrostatic chuck) a primary electrode having an excessively small area results in insufficient electrostatic attraction to hold the substrate 25 to the surface 75 of the dielectric 60. It has been discovered that for conduits 160 having the dimensions given above, a sufficient thickness of dielectric material is from about 2 times to about 200 times the thickness of the portion of the dielectric 60 that overlies the primary electrode 70. Preferably, thickness of the dielectric between the edge 195 of the primary electrode 70 and the surface 180 of the conduit 160 is at least about 3 mm, and more preferably less than about 10 mm.
  • In another aspect of the present invention, the [0035] support 55 further comprises a counter or secondary electrode 210 covered by or embedded in the dielectric 60. The secondary electrode 210 is adapted to attract an electric field emanating from the edge 195 of the primary electrode 70 and away from the conduit 160 during processing of the substrate 25. For example, as shown in FIG. 3, the secondary electrode 210 comprises a perimeter 225 adjacent to and extending along the edge 195 of the primary electrode 70 that circumvents a conduit 160. In operation, the secondary electrode 210 is electrically biased relative to the primary electrode 70 to reduce the incidence of plasma formation in the conduit 160 during processing of the substrate 25. For example, when RF power is applied to the primary electrode 70 the secondary electrode can be electrically grounded.
  • Preferably, the [0036] secondary electrode 210 has a surface comprising an area that is smaller than the area of the primary electrode 70 to reduce wastage of power from the excessive coupling of RF and DC electrical energy from the primary electrode 70 to the secondary electrode 210. Thus, preferably, the secondary electrode 210 comprises a total area that is less than about 5% of the total area of the primary electrode 70. More preferably, the secondary electrode 210 comprises a total area of about 1000 to about 2000 mm2. The total area is the area of an entire surface of the electrode or a sum of the area of the surfaces of a plurality of electrode segments.
  • In addition, preferably, the [0037] secondary electrode 210 is not in the same plane (non-coplanar) as the primary electrode 70 to further increase the separation distance or gap between the secondary electrode 210 and the primary electrode 70. While a larger gap further reduces leakage of RF or DC energy from the primary electrode 70; too large a gap can cause the secondary electrode to be ineffective. Preferably, the secondary electrode 210 is also below the level of the primary electrode 70 to further reduce the attenuation of energy applied to electrode 210. For example, as shown in FIG. 4, the secondary electrode 210 can comprise a thin conducting strip that forms a ring or a collar 220 lying below the level, and about the edge 195, of the primary electrode 70. Like the primary electrode 70, the secondary electrode 210 can comprise a conductor layer, a mesh of conducting material, or a conducting pattern of dopant in the dielectric 60, and the secondary electrode 210 can be made from the same materials as the primary electrode 70
  • In one version, as shown in FIGS. 5[0038] a and 5 b, the secondary electrode 210 is shaped as one or more collars 230 that are disposed about and adjacent to the conduits 160. Each collar 230 comprises an inner diameter that is larger than the apertures 185 of the primary electrode 70 and an outer diameter that is sufficiently large to be close to and attract the electric field emanating out from the edge 195 of the primary electrode 70. This version reduces plasma formation in the conduits 160 while also reducing wastage of electrical energy from coupling of RF and DC energy from the primary electrode 70 to the secondary electrode 210 because of the relatively small size of the collar 230.
  • In another version, as shown in FIG. 6, the [0039] secondary electrode 210 comprises a plurality of primary electrode segments 220 a, b. The electrode segments 220 a, b are positioned a different distances from the primary electrode 70 and the surface 180 of the conduit 160. This version is particularly useful for embodiments in which the support 55 is supported on a base 130 having a dielectric plug 235 at a lower end of the conduit 160, as shown in FIG. 6. The dielectric plug 235 is made from a polymeric or ceramic material and prevents the primary electrode 70 or the substrate 25 from shorting to the base 130 when a plasma forms in the conduit 160. The heat transfer gas passes through a narrow gap 245 between the base 130 and the dielectric plug 235 to enter the conduit 160. As shown in FIG. 6, a first collar 220 a comprising a thin strip of a conductor lying below and adjacent to the edge 195 of the primary electrode 70, attracts the electric field emanating from the primary electrode 70 away from the conduit 160. A second collar 220 b, lying over and adjacent to the gap 245 reduces excessive ingress or penetration of the electric field from the primary electrode 70 into the gap 245 between the base 130 and the dielectric plug 235 to reduce the plasma formation therein.
  • In another version, shown in FIG. 7, the [0040] secondary electrode 210 comprises a cylindrical collar 220 c disposed about the conduit, and lying below and adjacent to the edge 195 of the primary electrode 70. The relatively large surface area of the collar 220 c parallel to the conduit 160 suppresses RF coupling from the edge 195 of the primary electrode 70 to the gas in the conduit 160 and substantially eliminates plasma formation in the conduit 160 during processing of the substrate 25. The collar 220 c can be comprise an inner diameter larger than the aperture 185 of the primary electrode 70 so that the collar 220 c is covered by the primary electrode 70, as shown in FIG. 7. Alternatively, the collar 220 c can comprise an outer diameter smaller than the aperture 185 as shown in FIG. 8. The increased separation of the collar from the primary electrode 70 further reduces leakage of RF or DC current from the primary electrode 70.
  • Optionally, the [0041] secondary electrode 210 is electrically biased relative to the primary electrode 70 by a bias voltage supply 260. Biasing the secondary electrode 210 enables the strength with which it attracts the electric field emanating from the primary electrode 70 to be changed during processing of the substrate 25. The secondary electrode 210 is electrically biased to reduce wastage of power caused by coupling of RF and DC energy from the primary electrode 70 to the secondary electrode 210 while also reducing the formation of plasma in the conduits 160. This is particularly desirable for processes in which a relatively low voltage is applied to the primary electrode 70. In these processes, the potential for plasma formation in the conduits 160 is low and the loss of power to a grounded secondary electrode 210 due RF and DC leakage current can be significant. Thus, biasing the secondary electrode 210 to a voltage above ground potential reduces the difference in potential between the secondary electrode 210 and primary electrode 70, both reduces wastage of power from the primary electrode 70 and plasma formation in the conduits 160. Generally, the secondary electrode 210 is biased with a voltage of from about −1000 to about +1000 volts which can be DC or RF voltage. The secondary electrode 210 cal also comprise a plurality of electrode segments that are each at a different distance from the primary electrode 70 or from the surface 180 of the conduit 160 and that are each biased to a different electrical potential level. This is particularly useful for a chamber 30 in which different RF voltages are applied to the primary electrode 70 and the base 130. The potential applied to each electrode segment is selected to substantially eliminate plasma formation in the conduit 160 during processing of the substrate 25 while reducing loss of power due to RF leakage current.
    • EXAMPLES
  • The following examples show the use of the present invention in reducing the incidence of plasma formation in a [0042] conduit 160 when the primary electrode 70 is charged by an RF voltage to energize the plasma ions in the chamber 30 during processing of the substrate 25. These examples are computer simulations of the equipotential lines emanating from the primary electrode 70 for different configurations of the support 55. The computer simulations of the equipotential lines are illustrated graphically in FIGS. 9 to 13. The horizontal axis of the graphs represents distance away from the surface 180 of the conduit 160. The vertical axis represents the distance from the base 130 of the support 55. Thus, FIGS. 9 to 13 can be viewed as a partial sectional side view of the dielectric 60 with the vertical axis representing a section of the surface 180 of a conduit 160, and the horizontal axis representing a section of the lower surface of the dielectric 60. Furthermore, the strength of an electric field (not shown) extending between any two equipotential lines is directly proportional to the difference in potential between the equipotential lines and inversely proportional to the distance between them. Thus, in FIGS. 9 to 13 the closer together the equipotential lines, the stronger the electric field at that point.
  • FIG. 9 shows the equipotential lines for a [0043] conventional support 55 comprising a dielectric 60 covering a primary electrode 70 that extends to within about 2.5 mm of the surface 180 of the conduit 160. In deriving the equipotential lines for FIG. 9, the substrate 25 was assumed to be at a potential of about 500 volts DC, the base 130 was grounded, and 1000 volts peak to peak was applied to the primary electrode 70. The primary electrode 70 can be thought of as a line source that originates at a point 2.5 mm from the vertical axis (2.5 mm from the surface 180 of the conduit) and about 10 mm from the horizontal axis (substantially at the top of the dielectric 60), and extends parallel to the horizontal axis. The clustering of equipotential lines near the top of the surface 180 of the conduit 160 (represented by the vertical axis from 7 to 10 mm) suggest a strong electric field that would lead to plasma formation in the conduit 160.
  • FIG. 10 shows the equipotential lines for a [0044] support 55 according to the present invention in which the thickness of dielectric material between the primary electrode 70 and the surface 180 of the conduit 160 is selected to be about 4 mm. As before the substrate 25 was assumed to be at a potential of about 500 volts DC, the base 130 was grounded, and 1000 volts peak to peak were applied to the primary electrode 70. The equipotential lines intersecting the surface 180 of the conduit 160 (represented by the vertical axis) are spread out suggesting a weaker electric field at the surface 180 of the conduit 160, and a reduced incidence of plasma formation in the conduit 160.
  • FIG. 11 shows the equipotential lines for a [0045] support 55 comprising a thickness of dielectric material between the primary electrode 70 and the surface 180 of the conduit 160 of about 6 mm. As in the preceding examples, the substrate 25 was assumed to be at a potential of about 500 volts DC, the base 130 was grounded, and 1000 volts peak to peak were applied to the primary electrode 70. The equipotential lines intersecting the surface 180 of the conduit 160 (represented by the vertical axis) are even more spread out suggesting a still weaker electric field and a further reduced incidence of plasma formation in the conduit 160.
  • FIG. 12 shows the equipotential lines for a [0046] support 55 in which the thickness of dielectric material between the primary electrode 70 and the surface 180 of the conduit 160 is selected to be about 4 mm, and the support 55 further comprises a secondary electrode 210 below and near the edge 195 of the primary electrode 70 as shown in FIG. 7. In this graph, the substrate 25, the base 130, and the secondary electrode 210 were assumed to be at ground potential (0 volts), and 700 volts RF were assumed to be applied to the primary electrode 70. As seen from the equipotential lines which do not intersect the surface 180 of the conduit 160 (represented by the vertical axis) at all, the grounded secondary electrode 210 attracts the electric field emanating from the edge 195 of the charged primary electrode 70 away from the conduit 160. The coupling of RF energy emanating from the edge 195 of the primary electrode 70, to a gas in the conduit 160 is reduced and plasma formation in the conduit 160 is substantially eliminated.
  • FIG. 13 shows the equipotential lines for a [0047] support 55 having a secondary electrode 210 comprising a plurality of collars 220 a, b as shown in FIG. 6. The first collar 220 a attracts electric fields that emanate from the primary electrode 70 and the second collar 220 b prevents the electric fields from penetrating into a gap 245 between the base 130 and a dielectric plug 235 and forming a plasma therein. In deriving the equipotential lines for this graph, the substrate 25 was assumed to be at 500 volts DC and the base at a potential of about −2500 volts peak to peak. The primary electrode 70 was assumed to be about 4 mm from the surface 180 of the conduit 160 and at a potential of about 1000 volts peak to peak. As shown, fewer than five equipotential lines intersect the surface 180 of the conduit 160 (represented by the vertical axis), and these are spread out along the full length of the conduit 160 indicating a greatly reduced electric field and a reduced the incidence of plasma formation in the conduit 160.
  • While the present invention has been described in considerable detail with reference to certain preferred versions, many other versions should be apparent to those of ordinary skill in the art. For example, the [0048] secondary electrode 210 can comprise conducting portions of the surface 180 of the conduits 160 themselves. Therefore, the spirit and scope of the appended claims should not be limited to the description of the preferred versions contained herein.

Claims (40)

What is claimed is:
1. A support capable of supporting a substrate and forming a plasma of a gas in a chamber, the support comprising:
(a) a primary electrode that is chargeable to form the plasma of the gas in the chamber; and
(b) a dielectric covering the primary electrode, the dielectric having a surface adapted to receive the substrate, and the dielectric having a conduit extending therethrough, a thickness of a portion of the dielectric between the primary electrode and the conduit being sufficiently large to reduce plasma formation in the conduit.
2. A support according to
claim 1
 wherein the conduit is adapted to provide heat transfer gas to the surface of the dielectric.
3. A support according to
claim 1
 wherein the conduit is adapted to hold a lift pin adapted to lift and lower the substrate.
4. A support according to
claim 1
 wherein the thickness of the portion of the dielectric between the primary electrode and the conduit is from about 2 times to about 200 times a thickness of dielectric that overlies the primary electrode.
5. A support according to
claim 1
 wherein the thickness of the portion of the dielectric between the primary electrode and the conduit is at least about 3 mm.
6. A support according to
claim 4
 wherein the thickness of the portion of the dielectric between the primary electrode and the conduit is less than about 10 mm.
7. A support according to
claim 1
 wherein the dielectric comprises a ceramic monolith.
8. A support according to
claim 1
 further comprising a secondary electrode covered by the dielectric.
9. A support according to
claim 8
 wherein the secondary electrode is not in the same plane as the primary electrode.
10. A support according to
claim 8
 wherein the secondary electrode is below the primary electrode.
11. A support according to
claim 8
 wherein the secondary electrode comprises a perimeter adjacent to an edge of the primary electrode.
12. A support according to
claim 8
 wherein the secondary electrode comprises a collar disposed adjacent to a portion of the primary electrode.
13. A support according to
claim 8
 wherein the secondary electrode is smaller than the primary electrode.
14. A chamber comprising the support of
claim 1
, the chamber comprising:
(a) gas distributor; and
(b) an exhaust,
whereby a substrate held on the support is processed by a plasma of gas distributed by gas distributor and exhausted by the exhaust.
15. A support capable of supporting a substrate during plasma processing in a chamber, the support comprising:
(a) first means for receiving the substrate and providing a first gas below the substrate; and
(b) second means for forming a plasma of second gas above the substrate and for reducing plasma formation in the first gas in the conduit during processing of the substrate on the support in the chamber.
16. A support according to
claim 15
 wherein the first means comprises a dielectric covering a primary electrode, and the second means comprises a thickness of a portion of a dielectric between an edge of the primary electrode and the conduit that is sufficiently large to reduce plasma formation in the first gas in the conduit.
17. A support according to
claim 16
 wherein the second means comprises a secondary electrode covered by a dielectric.
18. A support for supporting a substrate in a chamber, the support comprising:
(a) a dielectric having a surface adapted to receive the substrate, the dielectric comprising a conduit;
(b) a primary electrode covered by the dielectric, the primary electrode being chargeable to form a plasma of gas in the chamber, and the primary electrode having an edge around the conduit; and
(c) a secondary electrode covered by the dielectric.
19. A support according to
claim 18
 wherein the secondary electrode is adapted to suppress coupling of energy from the edge of the primary electrode to gas in the conduit during processing of the substrate on the support in the chamber.
20. A support according to
claim 18
 wherein the secondary electrode is not in the same plane as the primary electrode.
21. A support according to
claim 18
 wherein the secondary electrode is below the primary electrode.
22. A support according to
claim 18
 wherein the secondary electrode comprises a perimeter adjacent to the edge of the primary electrode.
23. A support according to
claim 18
 wherein the secondary electrode comprises a collar disposed about a portion of the primary electrode.
24. A support according to
claim 18
 wherein the secondary electrode is smaller than the primary electrode.
25. A support according to
claim 18
 wherein a thickness of a portion of the dielectric between the conduit and the edge of the primary electrode is sufficiently large to reduce the plasma formation in the gas in the conduit during processing of the substrate in the chamber.
26. A method of fabricating a support for holding a substrate in a chamber, the method comprising the steps of forming a dielectric covering a primary electrode, and forming a conduit in the dielectric so that a thickness of a portion of the dielectric between an edge of the primary electrode and a surface of the conduit is sufficiently large to reduce the incidence of plasma formation in the conduit when the primary electrode is charged by an RF voltage during processing of the substrate in the chamber.
27. A method according to
claim 26
 wherein the step of forming a dielectric covering a primary electrode comprises the step of forming a dielectric comprising a monolith having the primary electrode therein.
28. A method according to
claim 26
 comprising the step of forming a primary electrode having an area sufficiently large to electrostatically attract and hold the substrate upon application of a DC voltage to the primary electrode.
29. A method of fabricating a support for holding a substrate in a chamber, the method comprising the steps of forming a dielectric comprising a conduit, the dielectric covering a primary electrode and a secondary electrode, the primary electrode being chargeable to sustain a plasma of gas in the chamber, and the secondary electrode being shaped and sized to suppress coupling of energy from the edge of primary electrode to gas in the conduit during processing of the substrate on the support in the chamber.
30. A method according to
claim 29
 comprising the step of forming a secondary electrode having a perimeter extending along the edge of the primary electrode.
31. A method according to
claim 29
 comprising the step of forming a secondary electrode that is not in the same plane as the primary electrode.
32. A method according to
claim 29
 comprising the step of forming a secondary electrode having an area that is smaller than an area of the primary electrode.
33. A chamber for processing a substrate, the chamber comprising:
(a) a gas distributor capable of providing gas into the chamber;
(b) a dielectric having a surface capable of receiving the substrate and having a conduit therethrough;
(c) a primary electrode and a secondary electrode below the dielectric; and
(d) a voltage supply adapted to charge the primary electrode with an RF potential to sustain a plasma of gas in the chamber, and electrically bias the secondary electrode relative to the primary electrode to reduce plasma formation in the conduit during processing of the substrate in the chamber.
34. A chamber according to
claim 33
 wherein the secondary electrode is electrically grounded.
35. A chamber according to
claim 33
 wherein the secondary electrode is not in the same plane as the primary electrode.
36. A chamber according to
claim 33
 wherein the secondary electrode is smaller than the primary electrode.
37. A chamber according to 33 wherein the voltage supply further comprises a DC voltage source and wherein the primary electrode is chargeable to electrostatically attract and hold the substrate upon application of a DC voltage to the primary electrode.
38. A method of processing a substrate placed on a support in a chamber, the support comprising a dielectric having a surface capable of receiving the substrate, the dielectric covering a primary electrode and a secondary electrode, and the dielectric having a conduit therethrough, the method comprising the steps of:
(a) placing the substrate on the surface of the dielectric;
(b) maintaining the primary electrode in the support at an RF potential to sustain a plasma of gas in the chamber; and
(c) electrically biasing the secondary electrode relative to the primary electrode to reduce plasma formation in the conduit during processing of the substrate in the chamber.
39. A method according to
claim 38
 wherein step (c) comprises the step of electrically grounding the secondary electrode.
40. A method according to
claim 38
 further comprising the step of applying a DC potential to the primary electrode in the support to electrostatically hold the substrate to the dielectric.
US09/329,020 1999-06-09 1999-06-09 Substrate support for plasma processing Expired - Fee Related US6273958B2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
US09/329,020 US6273958B2 (en) 1999-06-09 1999-06-09 Substrate support for plasma processing
EP00942700A EP1183716A1 (en) 1999-06-09 2000-06-07 Substrate support for plasma processing
PCT/US2000/015703 WO2000075970A1 (en) 1999-06-09 2000-06-07 Substrate support for plasma processing
KR1020017015846A KR20020011998A (en) 1999-06-09 2000-06-07 Substrate support for plasma processing
JP2001502150A JP2003501829A (en) 1999-06-09 2000-06-07 Improved substrate support for plasma processing
TW089111357A TW452841B (en) 1999-06-09 2000-06-13 Improved substrate support for plasma processing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/329,020 US6273958B2 (en) 1999-06-09 1999-06-09 Substrate support for plasma processing

Publications (2)

Publication Number Publication Date
US20010003298A1 true US20010003298A1 (en) 2001-06-14
US6273958B2 US6273958B2 (en) 2001-08-14

Family

ID=23283511

Family Applications (1)

Application Number Title Priority Date Filing Date
US09/329,020 Expired - Fee Related US6273958B2 (en) 1999-06-09 1999-06-09 Substrate support for plasma processing

Country Status (6)

Country Link
US (1) US6273958B2 (en)
EP (1) EP1183716A1 (en)
JP (1) JP2003501829A (en)
KR (1) KR20020011998A (en)
TW (1) TW452841B (en)
WO (1) WO2000075970A1 (en)

Cited By (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040137745A1 (en) * 2003-01-10 2004-07-15 International Business Machines Corporation Method and apparatus for removing backside edge polymer
US20040224128A1 (en) * 2000-12-29 2004-11-11 Lam Research Corporation Low contamination plasma chamber components and methods for making the same
US20060102849A1 (en) * 2004-10-22 2006-05-18 Asml Netherlands B.V. Apparatus, method for supporting and/or thermally conditioning a substrate, a support table, and a chuck
US20070181420A1 (en) * 2006-02-07 2007-08-09 Ming-Tung Wang Wafer stage having an encapsulated central pedestal plate
US20080073032A1 (en) * 2006-08-10 2008-03-27 Akira Koshiishi Stage for plasma processing apparatus, and plasma processing apparatus
US20080276958A1 (en) * 2007-05-08 2008-11-13 Applied Materials, Inc. Substrate cleaning chamber and cleaning and conditioning methods
US20090284894A1 (en) * 2008-05-19 2009-11-19 Entegris, Inc. Electrostatic chuck
US20100326602A1 (en) * 2009-06-30 2010-12-30 Intevac, Inc. Electrostatic chuck
US20110155322A1 (en) * 2009-12-28 2011-06-30 Tokyo Electron Limited Plasma processing apparatus
US20130070384A1 (en) * 2010-05-28 2013-03-21 Varian Semiconductor Equipment Associates, Inc. High Surface Resistivity Electrostatic Chuck
US20160323942A1 (en) * 2012-09-27 2016-11-03 Osram Opto Semiconductors Gmbh Optoelectronic component with protective circuit
US9721821B2 (en) 2009-05-15 2017-08-01 Entegris, Inc. Electrostatic chuck with photo-patternable soft protrusion contact surface
US10811296B2 (en) * 2017-09-20 2020-10-20 Applied Materials, Inc. Substrate support with dual embedded electrodes
US20210183681A1 (en) * 2017-09-20 2021-06-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US11284500B2 (en) 2018-05-10 2022-03-22 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator
US20220130704A1 (en) * 2020-10-23 2022-04-28 Applied Materials, Inc. Bipolar electrostatic chuck to limit dc discharge
US11462389B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Pulsed-voltage hardware assembly for use in a plasma processing system
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11699572B2 (en) 2019-01-22 2023-07-11 Applied Materials, Inc. Feedback loop for controlling a pulsed voltage waveform
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11984306B2 (en) 2021-06-09 2024-05-14 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus
US12125673B2 (en) 2023-11-13 2024-10-22 Applied Materials, Inc. Pulsed voltage source for plasma processing applications

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100345053B1 (en) * 1999-10-01 2002-07-19 삼성전자 주식회사 Method and apparatus for forming hsg-si layer on a wafer
TW519716B (en) * 2000-12-19 2003-02-01 Tokyo Electron Ltd Wafer bias drive for a plasma source
JP4331427B2 (en) * 2001-10-03 2009-09-16 住友電気工業株式会社 Power supply electrode member used in semiconductor manufacturing equipment
US20040040664A1 (en) * 2002-06-03 2004-03-04 Yang Jang Gyoo Cathode pedestal for a plasma etch reactor
US7075771B2 (en) * 2003-05-21 2006-07-11 Tokyo Electron Limited Apparatus and methods for compensating plasma sheath non-uniformities at the substrate in a plasma processing system
JP4684222B2 (en) * 2004-03-19 2011-05-18 株式会社クリエイティブ テクノロジー Bipolar electrostatic chuck
KR100635709B1 (en) 2004-12-28 2006-10-17 동부일렉트로닉스 주식회사 Semiconductor manufacture equipment
JP4508054B2 (en) * 2005-09-12 2010-07-21 パナソニック株式会社 Method for manufacturing electrode member
US7511935B2 (en) * 2006-02-27 2009-03-31 Applied Materials, Israel, Ltd. Electrostatic chuck and method of its manufacture
JP5960384B2 (en) * 2009-10-26 2016-08-02 新光電気工業株式会社 Electrostatic chuck substrate and electrostatic chuck
JP6379200B2 (en) * 2013-11-26 2018-08-22 スミスズ ディテクション モントリオール インコーポレイティド Dielectric barrier discharge ionization source for spectroscopic measurements
US9101038B2 (en) 2013-12-20 2015-08-04 Lam Research Corporation Electrostatic chuck including declamping electrode and method of declamping
US10002782B2 (en) 2014-10-17 2018-06-19 Lam Research Corporation ESC assembly including an electrically conductive gasket for uniform RF power delivery therethrough
TWI801390B (en) 2017-06-19 2023-05-11 美商應用材料股份有限公司 Electrostatic chuck for high temperature processing chamber and forming method thereof
TW202326801A (en) * 2021-11-26 2023-07-01 日商東京威力科創股份有限公司 Electrostatic chuck and plasma processing device

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4184188A (en) 1978-01-16 1980-01-15 Veeco Instruments Inc. Substrate clamping technique in IC fabrication processes
US4384918A (en) 1980-09-30 1983-05-24 Fujitsu Limited Method and apparatus for dry etching and electrostatic chucking device used therein
JPS57149734A (en) 1981-03-12 1982-09-16 Anelva Corp Plasma applying working device
GB2147459A (en) 1983-09-30 1985-05-09 Philips Electronic Associated Electrostatic chuck for semiconductor wafers
US5326633A (en) * 1986-03-24 1994-07-05 Ensci, Inc. Coated substrates
JPS6372877A (en) 1986-09-12 1988-04-02 Tokuda Seisakusho Ltd Vacuum treatment device
ATE95513T1 (en) 1988-04-26 1993-10-15 Toto Ltd PROCESS FOR MAKING DIELECTRIC CERAMIC FOR ELECTROSTATIC CLAMPS.
JPH01298721A (en) 1988-05-27 1989-12-01 Tokuda Seisakusho Ltd Vacuum processor
JP2665242B2 (en) 1988-09-19 1997-10-22 東陶機器株式会社 Electrostatic chuck
DE69103915T2 (en) 1990-01-25 1995-05-11 Applied Materials Inc Electrostatic clamp and method.
US5238499A (en) 1990-07-16 1993-08-24 Novellus Systems, Inc. Gas-based substrate protection during processing
US5055964A (en) 1990-09-07 1991-10-08 International Business Machines Corporation Electrostatic chuck having tapered electrodes
US5166856A (en) 1991-01-31 1992-11-24 International Business Machines Corporation Electrostatic chuck with diamond coating
US5155652A (en) 1991-05-02 1992-10-13 International Business Machines Corporation Temperature cycling ceramic electrostatic chuck
US5191506A (en) 1991-05-02 1993-03-02 International Business Machines Corporation Ceramic electrostatic chuck
US5539609A (en) 1992-12-02 1996-07-23 Applied Materials, Inc. Electrostatic chuck usable in high density plasma
JP2938679B2 (en) 1992-06-26 1999-08-23 信越化学工業株式会社 Ceramic electrostatic chuck
US5376213A (en) 1992-07-28 1994-12-27 Tokyo Electron Limited Plasma processing apparatus
US5350479A (en) 1992-12-02 1994-09-27 Applied Materials, Inc. Electrostatic chuck for high power plasma processing
JP3021217B2 (en) 1992-12-17 2000-03-15 東京エレクトロン株式会社 Electrostatic chuck
US5542559A (en) 1993-02-16 1996-08-06 Tokyo Electron Kabushiki Kaisha Plasma treatment apparatus
US5646814A (en) 1994-07-15 1997-07-08 Applied Materials, Inc. Multi-electrode electrostatic chuck
US5720818A (en) 1996-04-26 1998-02-24 Applied Materials, Inc. Conduits for flow of heat transfer fluid to the surface of an electrostatic chuck
US6108189A (en) 1996-04-26 2000-08-22 Applied Materials, Inc. Electrostatic chuck having improved gas conduits
US5754391A (en) * 1996-05-17 1998-05-19 Saphikon Inc. Electrostatic chuck
US5880924A (en) * 1997-12-01 1999-03-09 Applied Materials, Inc. Electrostatic chuck capable of rapidly dechucking a substrate
US5886866A (en) 1998-07-06 1999-03-23 Applied Materials, Inc. Electrostatic chuck having a combination electrode structure for substrate chucking, heating and biasing

Cited By (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040224128A1 (en) * 2000-12-29 2004-11-11 Lam Research Corporation Low contamination plasma chamber components and methods for making the same
US20040137745A1 (en) * 2003-01-10 2004-07-15 International Business Machines Corporation Method and apparatus for removing backside edge polymer
US20060102849A1 (en) * 2004-10-22 2006-05-18 Asml Netherlands B.V. Apparatus, method for supporting and/or thermally conditioning a substrate, a support table, and a chuck
US7532310B2 (en) * 2004-10-22 2009-05-12 Asml Netherlands B.V. Apparatus, method for supporting and/or thermally conditioning a substrate, a support table, and a chuck
US20070181420A1 (en) * 2006-02-07 2007-08-09 Ming-Tung Wang Wafer stage having an encapsulated central pedestal plate
US20080073032A1 (en) * 2006-08-10 2008-03-27 Akira Koshiishi Stage for plasma processing apparatus, and plasma processing apparatus
US20080276958A1 (en) * 2007-05-08 2008-11-13 Applied Materials, Inc. Substrate cleaning chamber and cleaning and conditioning methods
US8435379B2 (en) * 2007-05-08 2013-05-07 Applied Materials, Inc. Substrate cleaning chamber and cleaning and conditioning methods
US9543187B2 (en) 2008-05-19 2017-01-10 Entegris, Inc. Electrostatic chuck
US20090284894A1 (en) * 2008-05-19 2009-11-19 Entegris, Inc. Electrostatic chuck
US10395963B2 (en) 2008-05-19 2019-08-27 Entegris, Inc. Electrostatic chuck
US9721821B2 (en) 2009-05-15 2017-08-01 Entegris, Inc. Electrostatic chuck with photo-patternable soft protrusion contact surface
US20100326602A1 (en) * 2009-06-30 2010-12-30 Intevac, Inc. Electrostatic chuck
US9245776B2 (en) * 2009-12-28 2016-01-26 Tokyo Electron Limited Plasma processing apparatus
US20110155322A1 (en) * 2009-12-28 2011-06-30 Tokyo Electron Limited Plasma processing apparatus
US9025305B2 (en) * 2010-05-28 2015-05-05 Entegris, Inc. High surface resistivity electrostatic chuck
TWI576957B (en) * 2010-05-28 2017-04-01 恩特格林斯公司 High surface resistivity electrostatic chuck and method of manufacturing the same
US20130070384A1 (en) * 2010-05-28 2013-03-21 Varian Semiconductor Equipment Associates, Inc. High Surface Resistivity Electrostatic Chuck
US20160323942A1 (en) * 2012-09-27 2016-11-03 Osram Opto Semiconductors Gmbh Optoelectronic component with protective circuit
TWI736785B (en) * 2017-09-20 2021-08-21 美商應用材料股份有限公司 Substrate support assembly, method for processing substrate and processing chamber
US20210183681A1 (en) * 2017-09-20 2021-06-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US10811296B2 (en) * 2017-09-20 2020-10-20 Applied Materials, Inc. Substrate support with dual embedded electrodes
US20210313213A1 (en) * 2017-09-20 2021-10-07 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US11284500B2 (en) 2018-05-10 2022-03-22 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
US11699572B2 (en) 2019-01-22 2023-07-11 Applied Materials, Inc. Feedback loop for controlling a pulsed voltage waveform
US12057292B2 (en) 2019-01-22 2024-08-06 Applied Materials, Inc. Feedback loop for controlling a pulsed voltage waveform
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
US11462389B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Pulsed-voltage hardware assembly for use in a plasma processing system
US11462388B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Plasma processing assembly using pulsed-voltage and radio-frequency power
US11848176B2 (en) 2020-07-31 2023-12-19 Applied Materials, Inc. Plasma processing using pulsed-voltage and radio-frequency power
US11776789B2 (en) 2020-07-31 2023-10-03 Applied Materials, Inc. Plasma processing assembly using pulsed-voltage and radio-frequency power
US20220130704A1 (en) * 2020-10-23 2022-04-28 Applied Materials, Inc. Bipolar electrostatic chuck to limit dc discharge
US12057339B2 (en) * 2020-10-23 2024-08-06 Applied Materials, Inc. Bipolar electrostatic chuck to limit DC discharge
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US11984306B2 (en) 2021-06-09 2024-05-14 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11887813B2 (en) 2021-06-23 2024-01-30 Applied Materials, Inc. Pulsed voltage source for plasma processing
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus
US12125673B2 (en) 2023-11-13 2024-10-22 Applied Materials, Inc. Pulsed voltage source for plasma processing applications

Also Published As

Publication number Publication date
KR20020011998A (en) 2002-02-09
EP1183716A1 (en) 2002-03-06
WO2000075970A1 (en) 2000-12-14
JP2003501829A (en) 2003-01-14
TW452841B (en) 2001-09-01
US6273958B2 (en) 2001-08-14

Similar Documents

Publication Publication Date Title
US6273958B2 (en) Substrate support for plasma processing
US8607731B2 (en) Cathode with inner and outer electrodes at different heights
JP4544740B2 (en) Support for supporting a substrate in a plasma processing chamber, processing chamber for processing a substrate in plasma, and method for uniformly processing a substrate in a plasma region
US6478924B1 (en) Plasma chamber support having dual electrodes
KR100803253B1 (en) Plasma chamber support with coupled electrode
US6887340B2 (en) Etch rate uniformity
EP1088332B1 (en) Focus ring arrangement for substantially eliminating unconfined plasma in a plasma processing chamber
US5688358A (en) R.F. plasma reactor with larger-than-wafer pedestal conductor
US5748434A (en) Shield for an electrostatic chuck
US7585384B2 (en) Apparatus and method to confine plasma and reduce flow resistance in a plasma reactor
KR20170022902A (en) Application of powered electrostatic faraday shield to recondition dielectric window in icp plasmas
KR101722382B1 (en) Plasma Processing Apparatus
KR101887160B1 (en) Reaction chamber and semi-conductor processing device
KR20100017240A (en) Annular baffle
JP2002520492A (en) Feedthrough overlapping coil
KR20050012185A (en) Electrostatic chuck having electrode with rounded edge
WO2002073654A1 (en) Plasma chamber support having dual electrodes
US20030037879A1 (en) Top gas feed lid for semiconductor processing chamber
US20230223292A1 (en) Flat bottom shadow ring
KR20040069746A (en) Antenna having multiple central axix and inductively coupled plasma generating apparatus applying the same

Legal Events

Date Code Title Description
AS Assignment

Owner name: APPLIED MATERIALS, INC., CALIFORNIA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:DAHIMENE, MAHMOUD;REEL/FRAME:010217/0496

Effective date: 19990612

Owner name: APPLIED MATERIALS, INC., CALIFORNIA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:SHAMOUILIAN, SHAMOUIL;KUMAR, ANANDA H.;SALIMIAN, SIAMEK;AND OTHERS;REEL/FRAME:010207/0952;SIGNING DATES FROM 19990610 TO 19990615

FPAY Fee payment

Year of fee payment: 4

REMI Maintenance fee reminder mailed
LAPS Lapse for failure to pay maintenance fees
STCH Information on status: patent discontinuation

Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362

FP Lapsed due to failure to pay maintenance fee

Effective date: 20090814