US11823879B2 - Film formation apparatus and film formation method - Google Patents

Film formation apparatus and film formation method Download PDF

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Publication number
US11823879B2
US11823879B2 US17/573,368 US202217573368A US11823879B2 US 11823879 B2 US11823879 B2 US 11823879B2 US 202217573368 A US202217573368 A US 202217573368A US 11823879 B2 US11823879 B2 US 11823879B2
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shutter
targets
film formation
target
cathodes
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US20220223390A1 (en
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Masato Shinada
Tetsuya Miyashita
Naoki Watanabe
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Assigned to TOKYO ELECTRON LIMITED reassignment TOKYO ELECTRON LIMITED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: WATANABE, NAOKI, MIYASHITA, TETSUYA, SHINADA, Masato
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3441—Dark space shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating

Definitions

  • the present disclosure relates to a film formation apparatus and a film formation method.
  • a film formation apparatus disclosed in Japanese Laid-open Patent Publication No. 2019-004075 includes a processing container, and a stage is installed in the processing container.
  • the stage includes an electrostatic chuck on which a wafer is mounted.
  • a plurality of (three or more) targets are installed above the stage.
  • the plurality of targets have metallic materials which are different from one another.
  • each of the plurality of targets is held by a holder made of a metal.
  • the holder is supported on a ceiling portion of the processing container via an insulating member.
  • a power supply is connected to each of the plurality of targets via the holder.
  • the power supply applies a negative direct current (DC) voltage to each of the plurality of targets.
  • a plurality of magnets are disposed outside the processing container so as to face the corresponding targets.
  • the film formation apparatus includes a plurality of scanning mechanisms for operating the plurality of magnets respectively.
  • the technique according to the present disclosure makes it possible to mount a wider variety of targets in a film formation apparatus which forms a film on a substrate by sputtering without changing a size of a cathode and without increasing a size of the apparatus.
  • a film formation apparatus which forms a film on a substrate by sputtering.
  • the apparatus comprises: a substrate holder configured to hold the substrate; and a plurality of cathodes configured to hold targets that emit sputtered particles, and connected to a power supply. At least one of the plurality of cathodes holds the targets of a plurality of types.
  • FIG. 1 is a longitudinal cross-sectional view illustrating an outline of a configuration of a film formation apparatus according to an embodiment.
  • FIG. 2 is a schematic bottom view of a ceiling portion of a processing container.
  • FIG. 3 is a diagram for describing a configuration around a first cathode.
  • FIG. 4 is a diagram for describing a configuration around a second cathode.
  • FIG. 5 is a schematic bottom view of a first shutter.
  • FIG. 6 is a schematic bottom view of a second shutter.
  • FIG. 7 is a diagram illustrating a state in which one target is selectively exposed by the first shutter and the second shutter.
  • FIG. 8 is a diagram illustrating the state in which one target is selectively exposed by the first shutter and the second shutter.
  • FIG. 9 is a diagram illustrating the state in which one target is selectively exposed by the first shutter and the second shutter.
  • FIG. 10 is a diagram illustrating another example of the cathode.
  • a film forming process for forming a desired film such as a metal film is performed on a substrate such as a semiconductor wafer (hereinafter, referred to as a “wafer”).
  • This film forming process is performed by, for example, sputtering.
  • the film formation apparatus for forming a film by sputtering includes a substrate holder which holds the substrate, and a cathode which holds a target that emits sputtered particles so that it faces the substrate holder, and is connected to a power supply.
  • the cathode is supported, for example, on a ceiling portion of a processing container in which the substrate holder is installed.
  • a plurality of targets may be mounted in the film formation apparatus. For example, when a multilayer film having different compositions between layers is formed by one film formation apparatus, the plurality of targets are mounted. When the plurality of targets are mounted, the targets are held on different cathodes respectively (refer to Japanese Laid-open Patent Publication No. 2019-004075).
  • the technology according to the present disclosure makes it possible to mount a wider variety of targets in the film formation apparatus which forms a film on the substrate by sputtering without changing a size of the cathode and without increasing a size of the apparatus.
  • FIG. 1 is a longitudinal cross-sectional view illustrating an outline of a configuration of the film formation apparatus 1 according to the present embodiment.
  • FIG. 2 is a schematic bottom view of a ceiling portion of the processing container 10 which will be described below.
  • FIG. 3 is a diagram for describing a configuration around a first cathode which will be described below.
  • FIG. 4 is a diagram for describing a configuration around a second cathode which will be described below.
  • FIG. 5 is a schematic bottom view of a first shutter which will be described below.
  • FIG. 6 is a schematic bottom view of a second shutter which will be described below.
  • FIGS. 7 to 9 are diagrams illustrating a state in which one target is selectively exposed by the first shutter and the second shutter. In FIG. 1 , illustration of a shield which will be described below is omitted.
  • the film formation apparatus 1 in FIG. 1 forms a film on a wafer W as the substrate by sputtering and, more specifically, forms a multilayer film on the wafer W by magnetron sputtering.
  • the film formation apparatus 1 includes a processing container 10 .
  • the processing container 10 is configured to be depressurizable and accommodates the wafer W.
  • the processing container 10 is made of, for example, aluminum and is connected to a ground potential.
  • An exhaust device 11 for reducing a pressure in a space inside the processing container 10 is connected to a bottom portion of the processing container 10 via an adaptive pressure control (APC) valve 12 .
  • APC adaptive pressure control
  • a loading and unloading port 13 of the wafer W is formed on a side wall of the processing container 10 , and a gate valve 13 a for opening and closing the loading and unloading port 13 is installed at the loading and unloading port 13 .
  • a mounting table 14 as the substrate holder is installed in the processing container 10 .
  • the wafer W is mounted on the mounting table 14 .
  • the mounting table 14 has a base 14 a and an electrostatic chuck 14 b.
  • the base 14 a is formed in a disk shape using, for example, aluminum.
  • a heater (not shown) for heating the wafer W is installed on the base 14 a .
  • a cooling mechanism may be installed instead of the heater, or both the heater and the cooling mechanism may be installed.
  • the electrostatic chuck 14 b includes a dielectric film and an electrode installed as an inner layer of the dielectric film and is installed on the base 14 a .
  • a direct current (DC) power supply 15 is connected to the electrode of the electrostatic chuck 14 b .
  • the wafer W mounted on the electrostatic chuck 14 b is attracted and held by the electrostatic chuck 14 b by an electrostatic force generated by applying a DC voltage from the DC power supply 15 to the electrode.
  • the mounting table 14 is connected to a rotating and moving mechanism 16 .
  • the rotating and moving mechanism 16 includes, for example, a support shaft 16 a and a driving part 16 b.
  • the support shaft 16 a extends in a vertical direction to pass through a bottom wall of the processing container 10 .
  • a sealing member SL is installed between the support shaft 16 a and the bottom wall of the processing container 10 .
  • the sealing member SL is a member which seals a space between the bottom wall of the processing container 10 and the support shaft 16 a so that the support shaft 16 a can rotate and move up and down and is, for example, a magnetic fluid seal.
  • An upper end of the support shaft 16 a is connected to a center of a lower surface of the mounting table 14 , and a lower end thereof is connected to the driving part 16 b.
  • the driving part 16 b has a driving source (for example, a motor or the like) which generates a driving force for rotating and moving the support shaft 16 a up and down.
  • a driving source for example, a motor or the like
  • the mounting table 14 rotates around the axis AX, and as the support shaft 16 a moves up and down, the mounting table 14 moves up and down.
  • a plurality of cathodes 20 a made of a metal such as copper, which hold the targets 20 are installed above the mounting table 14 , and in this example, four cathodes 20 are installed.
  • Each of the cathodes 20 a holds the target 20 at the front so that the target 20 is disposed in the processing container 10 and faces the mounting table 14 .
  • Each of the cathodes 20 a is installed on a ceiling portion of the processing container 10 .
  • a through hole is formed at an installation position of each of the cathodes 20 a in the processing container 10 .
  • an insulating member 10 a is installed on an inner wall surface of the processing container 10 to surround the through hole.
  • Each of the cathodes 20 a is installed in the processing container 10 via the insulating member 10 a to close the through hole.
  • a power supply 21 is connected to each of the cathodes 20 a , and a negative DC voltage is applied from the power supply 21 .
  • An AC voltage may be applied instead of the negative DC voltage.
  • a magnet 22 is installed at a position on the rear side of each of the cathodes 20 a and outside the processing container 10 .
  • the magnet 22 is connected to a moving mechanism 23 and swings in a predetermined direction along a rear surface of the corresponding cathode 20 a by the moving mechanism 23 .
  • the predetermined direction is, for example, a tangential direction of a circle centered on the axis AX at a center point of the corresponding cathode 20 a .
  • the moving mechanism 23 includes a driving part (not shown) including a driving source (for example, a motor or the like) which generates a driving force for swinging the magnet 22 .
  • the number of cathodes 20 a is four as described above. As shown in FIG. 2 , the four cathodes 20 a are arranged at equal intervals along a circumference centered on the axis AX. In the following, as described above, each of the cathodes 20 a arranged at equal intervals along the circumference may be referred to as a first cathode 20 a 1 , a second cathode 20 a 2 , a third cathode 20 a 3 , and a fourth cathode 20 a 4 in a clockwise direction in order from the upper cathode in FIG. 2 .
  • At least one of the four cathodes 20 a can hold a plurality of types of targets 20 at the same time.
  • one large target 20 is held on each of the first and third cathodes 20 a 1 and 20 a 3
  • two small targets 20 are held on each of the second and fourth cathodes 20 a 2 and 20 a 4 so as to be aligned in a swinging direction of the magnet 22 .
  • the target 20 held by the first cathode 20 a 1 may be referred to as a first target 20 1
  • the target 20 of the two targets 20 held by the second cathode 20 a 2 on the positive side in a circumferential direction with respect to the axis AX when viewed from the mounting table 14 side may be referred to as a second target 20 2
  • the target 20 on the negative side in the same direction may be referred to as a third target 20 3 .
  • the target 20 held by the third cathode 20 a 3 may be referred to as a fourth target 20 4
  • the target 20 of the two targets 20 held by the fourth cathode 20 a 4 on the positive side in the circumferential direction when viewed from the mounting table 14 side may be referred to as a fifth target 20 5
  • the target 20 on the negative side in the same direction may be referred to as a sixth target 20 6 .
  • the first to sixth targets 20 1 to 20 6 are made of different types of materials.
  • a shield 24 is installed on the first cathode 20 a 1 in order to prevent contamination (cross-contamination) between the single target 20 held by the first cathode 20 a 1 and the targets 20 held by the other cathodes 20 a .
  • the shield 24 is installed to cover an outer periphery of the target 20 held by the first cathode 20 a 1 .
  • a similar shield 24 is installed on the third cathode 20 a 3 .
  • a shield 25 is installed on the second cathode 20 a 2 which holds the two targets 20 in order to prevent contamination between the two targets 20 held by the second cathode 20 a 2 and between the targets 20 held by the second cathode 20 a 2 and the targets 20 held by the other cathodes 20 a .
  • the shield 25 is installed to cover the entire outer periphery of the plurality of targets 20 held by the second cathode 20 a 2 and to separate the two targets 20 held by the second cathode 20 a 2 from each other.
  • a similar shield 25 is installed on the fourth cathode 20 a 4 .
  • the shields 24 and 25 can prevent the cathode 20 a from being sputtered. Further, the shields 24 and 25 are formed of, for example, aluminum.
  • each of the shields 24 and 25 on the mounting table 14 side and an end surface (a lower surface in the drawing) of the corresponding target 20 in an unused state on the mounting table 14 side are located (located below in the drawing) closer to the mounting table 14 .
  • a swing range of the magnet 22 with respect to each of the targets 20 differs depending on a size of the target 20 .
  • the swing range of the magnet 22 with respect to the small target 20 such as the second target 20 2 is smaller than the swing range of the magnet 22 with respect to the large target 20 such as the first target 20 1 , and specifically, it is about half.
  • the small target 20 it is possible to suppress sputtering of unnecessary portions (for example, the shield 25 and other small target held on the same cathode).
  • a shutter 30 is installed between the cathode 20 a and the mounting table 14 .
  • a first shutter 31 and a second shutter 32 are installed between the target 20 held by the cathode 20 a and the mounting table 14 .
  • Each of the first shutter 31 and the second shutter 32 has a shape along a conical surface with the axis AX as a central axis.
  • the second shutter 32 is installed between the first shutter 31 and the mounting table 14 .
  • a large opening 31 a which is an opening having a size corresponding to the large target 20 held by the first and third cathodes 20 a 1 and 20 a 3 is formed in the first shutter 31 . Further, as shown in FIG. 1 , one end of a rotating shaft 33 is connected to a central portion of the first shutter 31 .
  • the second shutter 32 has a large opening 32 a which is an opening having a size corresponding to the large target 20 held by each of the first and third cathodes 20 a 1 and 20 a 3 , and small openings 32 b and 32 c which are openings having a size corresponding to the small target 20 held by each of the second and fourth cathodes 20 a 2 and 20 a 4 .
  • the small opening 32 b is an opening for the target 20 on the positive side in the circumferential direction when viewed from the mounting table 14 side out of the two small targets 20 held by the second and fourth cathodes 20 a 2 and 20 a 4 .
  • the small opening 32 c is an opening for the target 20 on the negative side in the circumferential direction when viewed from the mounting table 14 side out of the two small targets 20 held by the second and fourth cathodes 20 a 2 and 20 a 4 .
  • the small opening 32 b and the small opening 32 c may be referred to as a small opening 32 b on the positive side and a small opening 32 c on the negative side, respectively.
  • the position of the large opening 32 a is set to the 12 o'clock position when viewed from the mounting table 14 side, for example, the position of the small opening 32 b on the positive side is a position near 3 o'clock, and the position of the small opening 32 c on the negative side is a position near 6 o'clock.
  • Openings similar to the large opening 32 a and the small openings 32 b and 32 c may be formed in the first shutter 31 , and an opening similar to the large opening 31 a may be formed in the second shutter 32 .
  • one end of the rotating shaft 34 is connected to a central portion of the first shutter 31 while the other end of the rotating shaft 34 is connected to a central portion of the second shutter 32 .
  • the central axis of the rotating shaft 33 and the central axis of the rotating shaft 34 are coaxially installed and substantially coincide with the axis AX.
  • the rotating shaft 33 extends to the outside of the processing container 10 , and the other end thereof is connected to the rotating mechanism 35 .
  • the rotating mechanism 35 is configured to rotate the rotating shaft 33 and the rotating shaft 34 independently from each other about the axis AX.
  • the rotating mechanism 35 includes a driving part (not shown) including a driving source (for example, a motor or the like) which generates a driving force for rotating the rotating shaft 33 and the rotating shaft 34 .
  • the first shutter 31 rotates around the axis AX as the rotating shaft 33 rotates around the axis AX
  • the second shutter 32 rotates around the axis AX as the rotating shaft 34 rotates around the axis AX.
  • relative positions of the large opening 32 a , the small opening 32 b , the small opening 32 c , and the target 20 change.
  • only one target 20 is selectively exposed to the mounting table 14 through the openings of the first shutter 31 and the second shutter 32 .
  • the first target 20 1 is exposed to the mounting table 14 through the large opening 31 a and the large opening 32 a as shown in FIG. 7 , and the other targets 20 are shielded from the mounting table 14 by the first shutter 31 and the second shutter 32 .
  • the second target 20 2 is exposed to the mounting table 14 through the large opening 31 a and the small opening 32 b on the positive side, and the other targets 20 are shielded from the mounting table 14 by the first shutter 31 and the second shutter 32 .
  • the third target 20 3 is exposed to the mounting table 14 through the large opening 31 a and the small opening 32 c on the negative side, and the other targets 20 are shielded from the mounting table 14 by the first shutter 31 and the second shutter 32 .
  • the film formation apparatus 1 includes a gas supply (not shown) which supplies a gas into the processing container 10 .
  • the gas supply includes, for example, a gas source, a flow rate controller such as a mass flow controller, and a gas introduction part.
  • the gas source stores a gas (for example, Ar gas) which is excited in the processing container 10 .
  • the gas source is connected to the gas introduction part via the flow rate controller.
  • the gas introduction part is a member which introduces a gas from the gas source into the processing container 10 .
  • the gas supplied into the processing container 10 is excited. Further, a magnetic field is generated in the vicinity of a front surface of the target 20 by the magnet 22 , and plasma is concentrated in the vicinity of the front surface of the target 20 . Then, when positive ions in the plasma collide with the target 20 , a substance constituting the target 20 is emitted from the target 20 as sputtered particles. Thus, a desired film is formed on the wafer W.
  • the film formation apparatus 1 further includes a controller U.
  • the controller U is configured of, for example, a computer equipped with a central processing unit (CPU), a memory, and the like, and includes a program storage (not shown).
  • the program storage stores a program which controls the driving part 16 b , the driving part of the moving mechanism 23 , the driving part of the rotating mechanism 35 , and the like and realizes a film forming process described below in the film formation apparatus 1 .
  • the program may be recorded on a storage medium which is readable by a computer and may be installed in the controller U from the storage medium. Further, a part or the whole of the program may be realized by dedicated hardware (a circuit board).
  • the wafer W is loaded into the processing container 10 adjusted to a desired pressure. Specifically, the gate valve 13 a is opened, and a transport mechanism (not shown) in which the wafer W is held is inserted into the processing container 10 from a transport chamber (not shown) having a vacuum atmosphere adjacent to the processing container 10 via the loading and unloading port 13 . Then, the wafer W is transported above the mounting table 14 . Next, the wafer W is delivered onto raised support pins (not shown), then the transport mechanism is withdrawn from the processing container 10 , and the gate valve 13 a is closed. At the same time, the support pins are lowered, and the wafer W is mounted on the mounting table 14 and is attracted and held by an electrostatic absorption force of the electrostatic chuck 14 b.
  • a multilayer film is formed on the wafer W by magnetron sputtering. Specifically, a film formation using the first target 20 1 , a film formation using the second target 20 2 , a film formation using the third target 20 3 , a film formation using the fourth target 20 4 , a film formation using the fifth target 20 5 , and a film formation using the sixth target 20 6 are performed on the wafer W.
  • the order of the film formation is arbitrary and predetermined. Further, at least one of the six types of film formations may be performed a plurality of times.
  • the mounting table 14 is rotated by the rotating and moving mechanism 16 , and Ar gas, for example, is supplied from the gas supply (not shown) into the processing container 10 . Further, electric power is supplied from the power supply 21 to the first target 20 1 .
  • the moving mechanism 23 causes the magnet 22 to swing along the first cathode 20 a 1 in the predetermined direction described above.
  • the Ar gas in the processing container 10 is ionized by the electric power from the power supply 21 , and electrons generated by the ionization drift by the magnetic field (that is, a leakage magnetic field) formed at the front of the first target 20 1 by the corresponding magnet 22 to generate high density plasma.
  • the surface of the first target 20 1 is sputtered by the Ar ions generated in the plasma, and sputtered particles of a constituent material of the first target 20 1 are deposited on the wafer W to form a layer of the constituent material of the first target 20 1 .
  • the third target 20 3 of all the targets 20 is selectively exposed to the mounting table 14 via the large opening 31 a and the small opening 32 c on the negative side. Then, in this state, as in the case of film formation using the second target 20 2 , the Ar gas is supplied into the processing container 10 , the power is supplied from the power supply 21 , and the corresponding magnet 22 is swung, and the like. Thus, a layer of the constituent material of the third target 20 3 is formed.
  • the fourth target 20 4 In the film formation using the fourth target 20 4 , by the rotation of the first shutter 31 and the second shutter 32 by the rotating mechanism 35 , only the fourth target 20 4 of all the targets 20 is selectively exposed to the mounting table 14 via the large opening 31 a and the large opening 32 a . Then, in this state, as in the case of the film formation using the first target 20 1 , the Ar gas is supplied into the processing container 10 , the power is supplied from the power supply 21 , the corresponding magnet 22 is swung, and the like. Thus, a layer of the constituent material of the fourth target 20 4 is formed.
  • the film formation using the fifth target 20 5 by the rotation of the first shutter 31 and the second shutter 32 by the rotating mechanism 35 , only the fifth target 20 5 of all the targets 20 is selectively exposed to the mounting table 14 via the large opening 31 a and the small opening 32 b on the positive side. Then, in this state, as in the case of film formation using the second target 20 2 , the Ar gas is supplied into the processing container 10 , the power is supplied from the power supply 21 , and the corresponding magnet 22 is swung, and the like. Thus, a layer of the constituent material of the fifth target 20 5 is formed.
  • the sixth target 20 6 In the film formation using the sixth target 20 6 , by the rotation of the first shutter 31 and the second shutter 32 by the rotating mechanism 35 , only the sixth target 20 6 of all the targets 20 is selectively exposed to the mounting table 14 via the large opening 31 a and the small opening 32 c on the negative side. Then, in this state, as in the case of film formation using the second target 20 2 , the Ar gas is supplied into the processing container 10 , the power is supplied from the power supply 21 , and the corresponding magnet 22 is swung, and the like. Thus, a layer of the constituent material of the sixth target 20 6 is formed.
  • the wafer W is unloaded from the processing container 10 . Specifically, the wafer W is unloaded from the processing container 10 in a reverse operation of the loading operation.
  • the film formation apparatus 1 includes a plurality of cathodes 20 a , and at least one cathode 20 a of the plurality of cathodes 20 a holds a plurality of types of targets 20 . Therefore, according to the present embodiment, various types of targets 20 can be simultaneously mounted in the film formation apparatus 1 without changing the size of the cathode 20 a and without increasing the size of the film formation apparatus 1 .
  • the configuration of the film formation apparatus 1 according to the present embodiment can be applied to an existing film formation apparatus in which a plurality of cathodes 20 a are included and a magnet 22 is installed for each of the cathodes 20 a without changing the design of the cathode 20 a and the magnet 22 . Therefore, in manufacturing the film formation apparatus 1 according to the present embodiment, the review of the film forming conditions and the like can be minimized.
  • the plurality of targets 20 are installed to be arranged in the swing direction of the magnet 22 on the cathode 20 a which holds the plurality of targets 20 .
  • the plurality of targets 20 are installed to be arranged in a direction orthogonal to the swing direction of the magnet 22 , for example, it is necessary to change the design of the magnet 22 such that the plurality of magnets 22 are provided for one cathode 20 a .
  • the swing range of the magnet 22 can be adjusted without changing the design of the magnet 22 from the existing one, and it is possible to prevent unnecessary regions from being sputtered when the swing range of the magnet 22 with respect to the small target 20 is adjusted to be small.
  • the number of magnets 22 for one cathode 20 a may be one, an increase in manufacturing cost can be suppressed.
  • the target 20 for forming a thick layer may be large and the target 20 for forming a thin layer may be small, a difference in a lifetime between the targets 20 can be reduced. Therefore, the target for forming a thick layer and the target for forming a thin layer can be replaced at the same time without wasting the target for forming the thin layer. If the targets can be replaced at the same time in this way, a downtime (an operation stoppage period) of the apparatus due to the replacement can be reduced, which is preferable.
  • FIG. 10 is a diagram illustrating another example of the cathode.
  • the number of the targets 20 held by the cathode 20 a configured to be capable of holding the plurality of targets 20 is two, but it may be three or more as shown in the drawing.
  • the shield 25 is installed to cover the entire outer circumference of the plurality of targets 20 held by the cathode 20 a and to separate the three targets 20 held by the cathode 20 a from each other.
  • the first shield and the second shield are not limited to the above example.
  • the rotating mechanism may be able to switch between (A) and (B) below by rotating the first shutter and the second shutter.
  • a layer of a single material can be formed on the wafer W by selectively exposing one target 20 to the mounting table 14 as in (A), and an alloy layer can be formed on the wafer W by selectively exposing two or more targets to the mounting table 14 as in (B). Therefore, a multilayer film including the alloy layer can be formed on the wafer W.

Abstract

There is provided a film formation apparatus which forms a film on a substrate by sputtering. The apparatus comprises: a substrate holder configured to hold the substrate; and a plurality of cathodes configured to hold targets that emit sputtered particles, and connected to a power supply. At least one of the plurality of cathodes holds the targets of a plurality of types.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS
This application claims priority to Japanese Patent Application No. 2021-004131 filed on Jan. 14, 2021, the entire contents of which are incorporated herein by reference.
TECHNICAL FIELD
The present disclosure relates to a film formation apparatus and a film formation method.
BACKGROUND
A film formation apparatus disclosed in Japanese Laid-open Patent Publication No. 2019-004075 includes a processing container, and a stage is installed in the processing container. The stage includes an electrostatic chuck on which a wafer is mounted. In addition, a plurality of (three or more) targets are installed above the stage. The plurality of targets have metallic materials which are different from one another. Also, each of the plurality of targets is held by a holder made of a metal. The holder is supported on a ceiling portion of the processing container via an insulating member. A power supply is connected to each of the plurality of targets via the holder. The power supply applies a negative direct current (DC) voltage to each of the plurality of targets. Further, a plurality of magnets are disposed outside the processing container so as to face the corresponding targets. The film formation apparatus includes a plurality of scanning mechanisms for operating the plurality of magnets respectively.
SUMMARY
The technique according to the present disclosure makes it possible to mount a wider variety of targets in a film formation apparatus which forms a film on a substrate by sputtering without changing a size of a cathode and without increasing a size of the apparatus.
In accordance with an aspect of the present disclosure, there is provided a film formation apparatus which forms a film on a substrate by sputtering. The apparatus comprises: a substrate holder configured to hold the substrate; and a plurality of cathodes configured to hold targets that emit sputtered particles, and connected to a power supply. At least one of the plurality of cathodes holds the targets of a plurality of types.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a longitudinal cross-sectional view illustrating an outline of a configuration of a film formation apparatus according to an embodiment.
FIG. 2 is a schematic bottom view of a ceiling portion of a processing container.
FIG. 3 is a diagram for describing a configuration around a first cathode.
FIG. 4 is a diagram for describing a configuration around a second cathode.
FIG. 5 is a schematic bottom view of a first shutter.
FIG. 6 is a schematic bottom view of a second shutter.
FIG. 7 is a diagram illustrating a state in which one target is selectively exposed by the first shutter and the second shutter.
FIG. 8 is a diagram illustrating the state in which one target is selectively exposed by the first shutter and the second shutter.
FIG. 9 is a diagram illustrating the state in which one target is selectively exposed by the first shutter and the second shutter.
FIG. 10 is a diagram illustrating another example of the cathode.
 DETAILED DESCRIPTION
In a manufacturing process of a semiconductor device or the like, a film forming process for forming a desired film such as a metal film is performed on a substrate such as a semiconductor wafer (hereinafter, referred to as a “wafer”). This film forming process is performed by, for example, sputtering.
The film formation apparatus for forming a film by sputtering includes a substrate holder which holds the substrate, and a cathode which holds a target that emits sputtered particles so that it faces the substrate holder, and is connected to a power supply. The cathode is supported, for example, on a ceiling portion of a processing container in which the substrate holder is installed.
A plurality of targets may be mounted in the film formation apparatus. For example, when a multilayer film having different compositions between layers is formed by one film formation apparatus, the plurality of targets are mounted. When the plurality of targets are mounted, the targets are held on different cathodes respectively (refer to Japanese Laid-open Patent Publication No. 2019-004075).
Further, in recent years, mounting more types of targets in the film formation apparatus may be required due to further multi-layering of the multilayer film and the like. However, when the number of cathodes is increased in order to increase the number of targets mounted in the film formation apparatus, the processing container which supports the cathodes becomes large, and the size of the film formation apparatus increases. When a design of the cathode is changed to make the cathode smaller, it is possible to suppress the increase in the size of the film formation apparatus when the number of cathodes is increased, but when the design of the cathode is changed, a state of emission of the sputtered particles into a processing space during sputtering changes, and thus it is necessary to review processing conditions, which is not preferable.
Therefore, the technology according to the present disclosure makes it possible to mount a wider variety of targets in the film formation apparatus which forms a film on the substrate by sputtering without changing a size of the cathode and without increasing a size of the apparatus.
Hereinafter, the film formation apparatus according to the present embodiment will be described with reference to the accompanying drawings. In the present specification and the drawings, elements having substantially the same functional configuration are designated by the same reference numerals, and duplicate description thereof will be omitted.
<Film Formation Apparatus>
FIG. 1 is a longitudinal cross-sectional view illustrating an outline of a configuration of the film formation apparatus 1 according to the present embodiment. FIG. 2 is a schematic bottom view of a ceiling portion of the processing container 10 which will be described below. FIG. 3 is a diagram for describing a configuration around a first cathode which will be described below. FIG. 4 is a diagram for describing a configuration around a second cathode which will be described below. FIG. 5 is a schematic bottom view of a first shutter which will be described below. FIG. 6 is a schematic bottom view of a second shutter which will be described below. FIGS. 7 to 9 are diagrams illustrating a state in which one target is selectively exposed by the first shutter and the second shutter. In FIG. 1 , illustration of a shield which will be described below is omitted.
The film formation apparatus 1 in FIG. 1 forms a film on a wafer W as the substrate by sputtering and, more specifically, forms a multilayer film on the wafer W by magnetron sputtering. The film formation apparatus 1 includes a processing container 10.
The processing container 10 is configured to be depressurizable and accommodates the wafer W. The processing container 10 is made of, for example, aluminum and is connected to a ground potential. An exhaust device 11 for reducing a pressure in a space inside the processing container 10 is connected to a bottom portion of the processing container 10 via an adaptive pressure control (APC) valve 12. Further, a loading and unloading port 13 of the wafer W is formed on a side wall of the processing container 10, and a gate valve 13 a for opening and closing the loading and unloading port 13 is installed at the loading and unloading port 13.
A mounting table 14 as the substrate holder is installed in the processing container 10. The wafer W is mounted on the mounting table 14. The mounting table 14 has a base 14 a and an electrostatic chuck 14 b.
The base 14 a is formed in a disk shape using, for example, aluminum. A heater (not shown) for heating the wafer W is installed on the base 14 a. A cooling mechanism may be installed instead of the heater, or both the heater and the cooling mechanism may be installed.
The electrostatic chuck 14 b includes a dielectric film and an electrode installed as an inner layer of the dielectric film and is installed on the base 14 a. A direct current (DC) power supply 15 is connected to the electrode of the electrostatic chuck 14 b. The wafer W mounted on the electrostatic chuck 14 b is attracted and held by the electrostatic chuck 14 b by an electrostatic force generated by applying a DC voltage from the DC power supply 15 to the electrode.
The mounting table 14 is connected to a rotating and moving mechanism 16. The rotating and moving mechanism 16 includes, for example, a support shaft 16 a and a driving part 16 b.
The support shaft 16 a extends in a vertical direction to pass through a bottom wall of the processing container 10. A sealing member SL is installed between the support shaft 16 a and the bottom wall of the processing container 10. The sealing member SL is a member which seals a space between the bottom wall of the processing container 10 and the support shaft 16 a so that the support shaft 16 a can rotate and move up and down and is, for example, a magnetic fluid seal. An upper end of the support shaft 16 a is connected to a center of a lower surface of the mounting table 14, and a lower end thereof is connected to the driving part 16 b.
The driving part 16 b has a driving source (for example, a motor or the like) which generates a driving force for rotating and moving the support shaft 16 a up and down. As the support shaft 16 a rotates around an axis AX thereof, the mounting table 14 rotates around the axis AX, and as the support shaft 16 a moves up and down, the mounting table 14 moves up and down.
A plurality of cathodes 20 a, made of a metal such as copper, which hold the targets 20 are installed above the mounting table 14, and in this example, four cathodes 20 are installed. Each of the cathodes 20 a holds the target 20 at the front so that the target 20 is disposed in the processing container 10 and faces the mounting table 14. Each of the cathodes 20 a is installed on a ceiling portion of the processing container 10. A through hole is formed at an installation position of each of the cathodes 20 a in the processing container 10. Further, an insulating member 10 a is installed on an inner wall surface of the processing container 10 to surround the through hole. Each of the cathodes 20 a is installed in the processing container 10 via the insulating member 10 a to close the through hole.
Further, a power supply 21 is connected to each of the cathodes 20 a, and a negative DC voltage is applied from the power supply 21. An AC voltage may be applied instead of the negative DC voltage.
Further, a magnet 22 is installed at a position on the rear side of each of the cathodes 20 a and outside the processing container 10. The magnet 22 is connected to a moving mechanism 23 and swings in a predetermined direction along a rear surface of the corresponding cathode 20 a by the moving mechanism 23. The predetermined direction is, for example, a tangential direction of a circle centered on the axis AX at a center point of the corresponding cathode 20 a. The moving mechanism 23 includes a driving part (not shown) including a driving source (for example, a motor or the like) which generates a driving force for swinging the magnet 22.
In this example, the number of cathodes 20 a is four as described above. As shown in FIG. 2 , the four cathodes 20 a are arranged at equal intervals along a circumference centered on the axis AX. In the following, as described above, each of the cathodes 20 a arranged at equal intervals along the circumference may be referred to as a first cathode 20 a 1, a second cathode 20 a 2, a third cathode 20 a 3, and a fourth cathode 20 a 4 in a clockwise direction in order from the upper cathode in FIG. 2 .
In the present embodiment, at least one of the four cathodes 20 a can hold a plurality of types of targets 20 at the same time.
For example, as shown in FIGS. 2 and 3 , one large target 20 is held on each of the first and third cathodes 20 a 1 and 20 a 3, and as shown in FIGS. 2 and 4 , two small targets 20 are held on each of the second and fourth cathodes 20 a 2 and 20 a 4 so as to be aligned in a swinging direction of the magnet 22.
In the following, the target 20 held by the first cathode 20 a 1 may be referred to as a first target 20 1, the target 20 of the two targets 20 held by the second cathode 20 a 2 on the positive side in a circumferential direction with respect to the axis AX when viewed from the mounting table 14 side may be referred to as a second target 20 2, and the target 20 on the negative side in the same direction may be referred to as a third target 20 3. Similarly, the target 20 held by the third cathode 20 a 3 may be referred to as a fourth target 20 4, the target 20 of the two targets 20 held by the fourth cathode 20 a 4 on the positive side in the circumferential direction when viewed from the mounting table 14 side may be referred to as a fifth target 20 5, and the target 20 on the negative side in the same direction may be referred to as a sixth target 20 6.
The first to sixth targets 20 1 to 20 6 are made of different types of materials.
Further, a shield 24 is installed on the first cathode 20 a 1 in order to prevent contamination (cross-contamination) between the single target 20 held by the first cathode 20 a 1 and the targets 20 held by the other cathodes 20 a. The shield 24 is installed to cover an outer periphery of the target 20 held by the first cathode 20 a 1. A similar shield 24 is installed on the third cathode 20 a 3.
A shield 25 is installed on the second cathode 20 a 2 which holds the two targets 20 in order to prevent contamination between the two targets 20 held by the second cathode 20 a 2 and between the targets 20 held by the second cathode 20 a 2 and the targets 20 held by the other cathodes 20 a. The shield 25 is installed to cover the entire outer periphery of the plurality of targets 20 held by the second cathode 20 a 2 and to separate the two targets 20 held by the second cathode 20 a 2 from each other. A similar shield 25 is installed on the fourth cathode 20 a 4.
The shields 24 and 25 can prevent the cathode 20 a from being sputtered. Further, the shields 24 and 25 are formed of, for example, aluminum.
An end surface (a lower surface in the drawing) of each of the shields 24 and 25 on the mounting table 14 side and an end surface (a lower surface in the drawing) of the corresponding target 20 in an unused state on the mounting table 14 side are located (located below in the drawing) closer to the mounting table 14.
A swing range of the magnet 22 with respect to each of the targets 20 differs depending on a size of the target 20. For example, as shown by double-headed arrows in FIGS. 3 and 4 , the swing range of the magnet 22 with respect to the small target 20 such as the second target 20 2 is smaller than the swing range of the magnet 22 with respect to the large target 20 such as the first target 20 1, and specifically, it is about half. Thus, during film formation using the small target 20, it is possible to suppress sputtering of unnecessary portions (for example, the shield 25 and other small target held on the same cathode).
Further, as shown in FIG. 1 , a shutter 30 is installed between the cathode 20 a and the mounting table 14. Specifically, a first shutter 31 and a second shutter 32 are installed between the target 20 held by the cathode 20 a and the mounting table 14. Each of the first shutter 31 and the second shutter 32 has a shape along a conical surface with the axis AX as a central axis. The second shutter 32 is installed between the first shutter 31 and the mounting table 14.
As shown in FIG. 5 , a large opening 31 a which is an opening having a size corresponding to the large target 20 held by the first and third cathodes 20 a 1 and 20 a 3 is formed in the first shutter 31. Further, as shown in FIG. 1 , one end of a rotating shaft 33 is connected to a central portion of the first shutter 31.
As shown in FIG. 6 , the second shutter 32 has a large opening 32 a which is an opening having a size corresponding to the large target 20 held by each of the first and third cathodes 20 a 1 and 20 a 3, and small openings 32 b and 32 c which are openings having a size corresponding to the small target 20 held by each of the second and fourth cathodes 20 a 2 and 20 a 4. The small opening 32 b is an opening for the target 20 on the positive side in the circumferential direction when viewed from the mounting table 14 side out of the two small targets 20 held by the second and fourth cathodes 20 a 2 and 20 a 4. On the other hand, the small opening 32 c is an opening for the target 20 on the negative side in the circumferential direction when viewed from the mounting table 14 side out of the two small targets 20 held by the second and fourth cathodes 20 a 2 and 20 a 4. In the following, the small opening 32 b and the small opening 32 c may be referred to as a small opening 32 b on the positive side and a small opening 32 c on the negative side, respectively.
When the position of the large opening 32 a is set to the 12 o'clock position when viewed from the mounting table 14 side, for example, the position of the small opening 32 b on the positive side is a position near 3 o'clock, and the position of the small opening 32 c on the negative side is a position near 6 o'clock.
Openings similar to the large opening 32 a and the small openings 32 b and 32 c may be formed in the first shutter 31, and an opening similar to the large opening 31 a may be formed in the second shutter 32.
Further, as shown in FIG. 1 , one end of the rotating shaft 34 is connected to a central portion of the first shutter 31 while the other end of the rotating shaft 34 is connected to a central portion of the second shutter 32.
The central axis of the rotating shaft 33 and the central axis of the rotating shaft 34 are coaxially installed and substantially coincide with the axis AX. The rotating shaft 33 extends to the outside of the processing container 10, and the other end thereof is connected to the rotating mechanism 35. The rotating mechanism 35 is configured to rotate the rotating shaft 33 and the rotating shaft 34 independently from each other about the axis AX. The rotating mechanism 35 includes a driving part (not shown) including a driving source (for example, a motor or the like) which generates a driving force for rotating the rotating shaft 33 and the rotating shaft 34.
The first shutter 31 rotates around the axis AX as the rotating shaft 33 rotates around the axis AX, and the second shutter 32 rotates around the axis AX as the rotating shaft 34 rotates around the axis AX. By the rotation of the first shutter 31 and the second shutter 32, relative positions of the large opening 32 a, the small opening 32 b, the small opening 32 c, and the target 20 change. Thus, for example, among all the targets 20, only one target 20 is selectively exposed to the mounting table 14 through the openings of the first shutter 31 and the second shutter 32.
Specifically, for example, among all the targets 20, only the first target 20 1 is exposed to the mounting table 14 through the large opening 31 a and the large opening 32 a as shown in FIG. 7 , and the other targets 20 are shielded from the mounting table 14 by the first shutter 31 and the second shutter 32.
Further, as shown in FIG. 8 , among all the targets 20, only the second target 20 2 is exposed to the mounting table 14 through the large opening 31 a and the small opening 32 b on the positive side, and the other targets 20 are shielded from the mounting table 14 by the first shutter 31 and the second shutter 32.
Further, as shown in FIG. 9 , among all the targets 20, only the third target 20 3 is exposed to the mounting table 14 through the large opening 31 a and the small opening 32 c on the negative side, and the other targets 20 are shielded from the mounting table 14 by the first shutter 31 and the second shutter 32.
Further, the film formation apparatus 1 includes a gas supply (not shown) which supplies a gas into the processing container 10. The gas supply includes, for example, a gas source, a flow rate controller such as a mass flow controller, and a gas introduction part. The gas source stores a gas (for example, Ar gas) which is excited in the processing container 10. The gas source is connected to the gas introduction part via the flow rate controller. The gas introduction part is a member which introduces a gas from the gas source into the processing container 10.
When the gas is supplied from the gas supply, and electric power is supplied to the target 20 by the power supply 21, the gas supplied into the processing container 10 is excited. Further, a magnetic field is generated in the vicinity of a front surface of the target 20 by the magnet 22, and plasma is concentrated in the vicinity of the front surface of the target 20. Then, when positive ions in the plasma collide with the target 20, a substance constituting the target 20 is emitted from the target 20 as sputtered particles. Thus, a desired film is formed on the wafer W.
As shown in FIG. 1 , the film formation apparatus 1 further includes a controller U. The controller U is configured of, for example, a computer equipped with a central processing unit (CPU), a memory, and the like, and includes a program storage (not shown). The program storage stores a program which controls the driving part 16 b, the driving part of the moving mechanism 23, the driving part of the rotating mechanism 35, and the like and realizes a film forming process described below in the film formation apparatus 1. The program may be recorded on a storage medium which is readable by a computer and may be installed in the controller U from the storage medium. Further, a part or the whole of the program may be realized by dedicated hardware (a circuit board).
<Film Forming Processing>
Next, an example of the film forming process using the film formation apparatus 1 will be described.
(Loading)
First, under the control of the controller U, the wafer W is loaded into the processing container 10 adjusted to a desired pressure. Specifically, the gate valve 13 a is opened, and a transport mechanism (not shown) in which the wafer W is held is inserted into the processing container 10 from a transport chamber (not shown) having a vacuum atmosphere adjacent to the processing container 10 via the loading and unloading port 13. Then, the wafer W is transported above the mounting table 14. Next, the wafer W is delivered onto raised support pins (not shown), then the transport mechanism is withdrawn from the processing container 10, and the gate valve 13 a is closed. At the same time, the support pins are lowered, and the wafer W is mounted on the mounting table 14 and is attracted and held by an electrostatic absorption force of the electrostatic chuck 14 b.
(Multilayer Film Formation)
Subsequently, a multilayer film is formed on the wafer W by magnetron sputtering. Specifically, a film formation using the first target 20 1, a film formation using the second target 20 2, a film formation using the third target 20 3, a film formation using the fourth target 20 4, a film formation using the fifth target 20 5, and a film formation using the sixth target 20 6 are performed on the wafer W. The order of the film formation is arbitrary and predetermined. Further, at least one of the six types of film formations may be performed a plurality of times.
In the film formation using the first target 20 1, by the rotation of the first shutter 31 and the second shutter 32 by the rotating mechanism 35, only the first target 20 1 of all the targets 20 is selectively exposed to the mounting table 14 through the large opening 31 a and the large opening 32 a. Then, the mounting table 14 is rotated by the rotating and moving mechanism 16, and Ar gas, for example, is supplied from the gas supply (not shown) into the processing container 10. Further, electric power is supplied from the power supply 21 to the first target 20 1. At the same time, the moving mechanism 23 causes the magnet 22 to swing along the first cathode 20 a 1 in the predetermined direction described above. The Ar gas in the processing container 10 is ionized by the electric power from the power supply 21, and electrons generated by the ionization drift by the magnetic field (that is, a leakage magnetic field) formed at the front of the first target 20 1 by the corresponding magnet 22 to generate high density plasma. The surface of the first target 20 1 is sputtered by the Ar ions generated in the plasma, and sputtered particles of a constituent material of the first target 20 1 are deposited on the wafer W to form a layer of the constituent material of the first target 20 1.
In the film formation using the second target 20 2, by the rotation of the first shutter 31 and the second shutter 32 by the rotating mechanism 35, only the second target 20 2 of all the targets 20 is selectively exposed to the mounting table 14 via the large opening 31 a and the small opening 32 b on the positive side. Then, in this state, as in the case of the film formation using the first target 20 1, the Ar gas is supplied into the processing container 10, the power is supplied from the power supply 21, the corresponding magnet 22 is swung, and the like. Thus, a layer of the constituent material of the second target 20 2 is formed. In the film formation using the small second target 20 2, the swing range of the magnet 22 is set narrower than that in the film formation using the large first target 20 1.
In the film formation using the third target 20 3, by the rotation of the first shutter 31 and the second shutter 32 by the rotating mechanism 35, only the third target 20 3 of all the targets 20 is selectively exposed to the mounting table 14 via the large opening 31 a and the small opening 32 c on the negative side. Then, in this state, as in the case of film formation using the second target 20 2, the Ar gas is supplied into the processing container 10, the power is supplied from the power supply 21, and the corresponding magnet 22 is swung, and the like. Thus, a layer of the constituent material of the third target 20 3 is formed.
In the film formation using the fourth target 20 4, by the rotation of the first shutter 31 and the second shutter 32 by the rotating mechanism 35, only the fourth target 20 4 of all the targets 20 is selectively exposed to the mounting table 14 via the large opening 31 a and the large opening 32 a. Then, in this state, as in the case of the film formation using the first target 20 1, the Ar gas is supplied into the processing container 10, the power is supplied from the power supply 21, the corresponding magnet 22 is swung, and the like. Thus, a layer of the constituent material of the fourth target 20 4 is formed.
In the film formation using the fifth target 20 5, by the rotation of the first shutter 31 and the second shutter 32 by the rotating mechanism 35, only the fifth target 20 5 of all the targets 20 is selectively exposed to the mounting table 14 via the large opening 31 a and the small opening 32 b on the positive side. Then, in this state, as in the case of film formation using the second target 20 2, the Ar gas is supplied into the processing container 10, the power is supplied from the power supply 21, and the corresponding magnet 22 is swung, and the like. Thus, a layer of the constituent material of the fifth target 20 5 is formed.
In the film formation using the sixth target 20 6, by the rotation of the first shutter 31 and the second shutter 32 by the rotating mechanism 35, only the sixth target 20 6 of all the targets 20 is selectively exposed to the mounting table 14 via the large opening 31 a and the small opening 32 c on the negative side. Then, in this state, as in the case of film formation using the second target 20 2, the Ar gas is supplied into the processing container 10, the power is supplied from the power supply 21, and the corresponding magnet 22 is swung, and the like. Thus, a layer of the constituent material of the sixth target 20 6 is formed.
(Unloading)
After that, the wafer W is unloaded from the processing container 10. Specifically, the wafer W is unloaded from the processing container 10 in a reverse operation of the loading operation.
Then, the process returns to the above-described loading operation, and the next wafer W to be filmed is processed in the same manner.
<Effects>
As described above, in the present embodiment, the film formation apparatus 1 includes a plurality of cathodes 20 a, and at least one cathode 20 a of the plurality of cathodes 20 a holds a plurality of types of targets 20. Therefore, according to the present embodiment, various types of targets 20 can be simultaneously mounted in the film formation apparatus 1 without changing the size of the cathode 20 a and without increasing the size of the film formation apparatus 1.
Unlike the present embodiment, in the method of reducing the size of the cathode and increasing the number of cathodes, since the apparatus which forms a film by magnetron sputtering requires a magnet and a swing mechanism for the magnet for each of the cathodes, consequently, there is a limit to suppressing the increase in the size of the apparatus.
Further, the configuration of the film formation apparatus 1 according to the present embodiment can be applied to an existing film formation apparatus in which a plurality of cathodes 20 a are included and a magnet 22 is installed for each of the cathodes 20 a without changing the design of the cathode 20 a and the magnet 22. Therefore, in manufacturing the film formation apparatus 1 according to the present embodiment, the review of the film forming conditions and the like can be minimized.
Further, in the present embodiment, the plurality of targets 20 are installed to be arranged in the swing direction of the magnet 22 on the cathode 20 a which holds the plurality of targets 20. Unlike the present embodiment, when the plurality of targets 20 are installed to be arranged in a direction orthogonal to the swing direction of the magnet 22, for example, it is necessary to change the design of the magnet 22 such that the plurality of magnets 22 are provided for one cathode 20 a. On the other hand, in the present embodiment, it is not necessary to change the design of the magnet 22 as described above. Further, the swing range of the magnet 22 can be adjusted without changing the design of the magnet 22 from the existing one, and it is possible to prevent unnecessary regions from being sputtered when the swing range of the magnet 22 with respect to the small target 20 is adjusted to be small.
Further, since the number of magnets 22 for one cathode 20 a may be one, an increase in manufacturing cost can be suppressed.
Further, in the film formation apparatus 1 according to the present embodiment, since the target 20 for forming a thick layer may be large and the target 20 for forming a thin layer may be small, a difference in a lifetime between the targets 20 can be reduced. Therefore, the target for forming a thick layer and the target for forming a thin layer can be replaced at the same time without wasting the target for forming the thin layer. If the targets can be replaced at the same time in this way, a downtime (an operation stoppage period) of the apparatus due to the replacement can be reduced, which is preferable.
<Another Example of Cathode>
FIG. 10 is a diagram illustrating another example of the cathode.
In the above example, the number of the targets 20 held by the cathode 20 a configured to be capable of holding the plurality of targets 20 is two, but it may be three or more as shown in the drawing.
Also in this example, the shield 25 is installed to cover the entire outer circumference of the plurality of targets 20 held by the cathode 20 a and to separate the three targets 20 held by the cathode 20 a from each other.
<Other Examples of Shields>
The first shield and the second shield are not limited to the above example.
For example, by making the number and the positions of the openings different from those in the examples of FIGS. 5 and 6 , the rotating mechanism may be able to switch between (A) and (B) below by rotating the first shutter and the second shutter.
    • (A) One target 20 of all the targets held by the plurality of cathodes 20 a is selectively exposed to the mounting table 14 through the openings of the first shutter and the second shutter.
    • (B) Two or more targets 20 of all the targets held by the plurality of cathodes 20 a are selectively exposed to the mounting table 14 through the openings of the first shutter and the second shutter.
If the rotating mechanism can switch as described above, a layer of a single material can be formed on the wafer W by selectively exposing one target 20 to the mounting table 14 as in (A), and an alloy layer can be formed on the wafer W by selectively exposing two or more targets to the mounting table 14 as in (B). Therefore, a multilayer film including the alloy layer can be formed on the wafer W.
The embodiments disclosed at this time should be considered to be exemplary in all respects and not restrictive. The above embodiments may be omitted, replaced, or modified in various forms without departing from the scope of the appended claims and their gist.

Claims (7)

What is claimed is:
1. A film formation apparatus which forms a film on a substrate by sputtering, the apparatus comprising:
a substrate holder configured to hold the substrate;
a plurality of cathodes configured to hold targets that emit sputtered particles;
a shutter installed between the cathodes and the substrate holder and having an opening; and
a rotating mechanism configured to rotate the shutter,
wherein at least one of the plurality of cathodes holds multiple first targets of different materials on a same side of a same cathode of the plurality of cathodes, the multiple first targets being spaced apart from each other, and
wherein the shutter and the rotating mechanism are configured to selectively expose one target of the multiple first targets on the same side of the same cathode to the substrate holder while the other target(s) of the multiple first targets are covered by the shutter.
2. The film formation apparatus of claim 1, wherein a shield is installed at said at least one of the plurality of cathodes so that the multiple first targets are spaced apart from one another.
3. The film formation apparatus of claim 1, wherein another cathode holds a second target larger than each of the multiple first targets.
4. The film formation apparatus of claim 1,
wherein the rotating mechanism is configured to selectively expose a specific target of all the targets held by the cathodes in the film formation apparatus to the substrate holder through the opening by rotating the shutter.
5. The film formation apparatus of claim 4, wherein a first shutter and a second shutter, each of which has an opening, are provided as the shutter, and
the rotating mechanism selectively exposes one of all the targets held by the cathodes in the film formation apparatus to the substrate holder through the opening of the first shutter and the opening of the second shutter by rotating the first shutter and the second shutter.
6. The film formation apparatus of claim 5, wherein the rotating mechanism switches between selectively exposing one target of all the targets held by the cathodes in the film formation apparatus to the substrate holder through the openings of the first shutter and the second shutter and selectively exposing two or more of all the targets held by the cathodes in the film formation apparatus to the substrate holder through the openings of the first shutter and the second shutter, by rotating the first shutter and the second shutter.
7. A film formation method which uses a film formation apparatus to form a film on a substrate by sputtering, the film formation apparatus including:
a substrate holder configured to hold the substrate;
a plurality of cathodes configured to hold targets that emit sputtered particles; and
a first shutter and a second shutter installed between the cathodes and the substrate holder and each having a plurality of openings,
wherein at least one of the plurality of cathodes holds multiple targets of different materials on a same side of a same cathode of the plurality of cathodes, the multiple targets being spaced apart from each other, wherein the first and second shutters are configured to selectively expose one target of the multiple first targets on the same side of the same cathode to the substrate holder while the other target(s) of the multiple first targets are covered by at least one of the first and second shutters, the method comprising:
selectively exposing one target of all the targets held by the cathodes in the film formation apparatus to the substrate holder through the openings of the first shutter and the second shutter by rotating the first shutter and the second shutter, and forming a layer of a single material on the substrate; and
selectively exposing two or more of all the targets held by the cathodes in the film formation apparatus to the substrate holder through the openings of the first shutter and the second shutter by rotating the first shutter and the second shutter, and forming an alloy layer on the substrate.
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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6143149A (en) * 1998-05-15 2000-11-07 Nec Corporation Magnetron with plurality of targets in correspondence to shield members
US20030085122A1 (en) * 2001-11-05 2003-05-08 Nobuyuki Takahashi Sputtering device
US20070056845A1 (en) * 2005-09-13 2007-03-15 Applied Materials, Inc. Multiple zone sputtering target created through conductive and insulation bonding
US20120055787A1 (en) * 2009-05-28 2012-03-08 Ulvac, Inc. Sputtering Target and Method of Processing a Sputtering Target
US20120164354A1 (en) * 2010-12-28 2012-06-28 Canon Anelva Corporation Sputtering apparatus and manufacturing method of electronic device
US20130270104A1 (en) * 2012-04-11 2013-10-17 Intermolecular, Inc. Combinatorial processing using mosaic sputtering targets
US20140102889A1 (en) * 2011-09-09 2014-04-17 Canon Anelva Corporation Film-forming apparatus
US20150114835A1 (en) * 2013-10-31 2015-04-30 Tokyo Electron Limited Film forming apparatus
JP2019004075A (en) 2017-06-16 2019-01-10 東京エレクトロン株式会社 Manufacturing method of magnetoresistive element

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6143149A (en) * 1998-05-15 2000-11-07 Nec Corporation Magnetron with plurality of targets in correspondence to shield members
US20030085122A1 (en) * 2001-11-05 2003-05-08 Nobuyuki Takahashi Sputtering device
US20070056845A1 (en) * 2005-09-13 2007-03-15 Applied Materials, Inc. Multiple zone sputtering target created through conductive and insulation bonding
US20120055787A1 (en) * 2009-05-28 2012-03-08 Ulvac, Inc. Sputtering Target and Method of Processing a Sputtering Target
US20120164354A1 (en) * 2010-12-28 2012-06-28 Canon Anelva Corporation Sputtering apparatus and manufacturing method of electronic device
US20140102889A1 (en) * 2011-09-09 2014-04-17 Canon Anelva Corporation Film-forming apparatus
US20130270104A1 (en) * 2012-04-11 2013-10-17 Intermolecular, Inc. Combinatorial processing using mosaic sputtering targets
US20150114835A1 (en) * 2013-10-31 2015-04-30 Tokyo Electron Limited Film forming apparatus
JP2019004075A (en) 2017-06-16 2019-01-10 東京エレクトロン株式会社 Manufacturing method of magnetoresistive element

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