US10998136B2 - Three-dimensional capacitor - Google Patents
Three-dimensional capacitor Download PDFInfo
- Publication number
- US10998136B2 US10998136B2 US15/618,201 US201715618201A US10998136B2 US 10998136 B2 US10998136 B2 US 10998136B2 US 201715618201 A US201715618201 A US 201715618201A US 10998136 B2 US10998136 B2 US 10998136B2
- Authority
- US
- United States
- Prior art keywords
- electrode layer
- oxide film
- anodic oxide
- holes
- conductors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 51
- 239000010407 anodic oxide Substances 0.000 claims abstract description 56
- 239000004020 conductor Substances 0.000 claims abstract description 41
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 238000007743 anodising Methods 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000010953 base metal Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000003985 ceramic capacitor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/012—Form of non-self-supporting electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/10—Metal-oxide dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/07—Dielectric layers
Definitions
- the present invention relates to a three-dimensional (3D) capacitor using an anodic oxide film.
- a capacitor has been used as a battery which stores or discharges electric power, and to use a property thereof which does not allow direct current to pass therethrough.
- a capacitor has a structure in which two insulated flat electrodes are arranged to be close to each other and a dielectric is interposed between them.
- Such capacitors may be divided into an air capacitor, a vacuum capacitor, a gas capacitor, a liquid capacitor, a mica capacitor, a ceramic capacitor, a paper capacitor, a plastic-film capacitor, an electrolytic capacitor, and the like according to a material of a dielectric thereof.
- an electrolytic capacitor examples include an aluminum electrolytic capacitor and a tantalum electrolytic capacitor.
- an electrolytic capacitor refers to an aluminum electrolytic capacitor.
- a thin oxide film is used as a dielectric and aluminum is used as an electrode. By forming a dielectric to have a very thin thickness, a high capacitance, relative to a volume thereof, may be achieved.
- MLCC multi-layer ceramic capacitor
- An MLCC is formed to a height of 0.3 mm, which is equal to a diameter of a human hair, by alternately stacking 200 to 1000 layers of a ceramic and a metal.
- An MLCC is configured to store electric power by stacking multiple layers of a ceramic and nickel on the basis of a principle that nickel is a metal and thus carries electric current, but ceramic does not carry the electric current.
- An MLCC is a key component of electronic products, and thus several hundred MLCCs are essentially included in an electronic product such as a cellular phone, a smart phone, a liquid crystal display (LCD) television (TV), a computer, etc.
- an electronic product such as a cellular phone, a smart phone, a liquid crystal display (LCD) television (TV), a computer, etc.
- LCD liquid crystal display
- TV television
- computer etc.
- electronic devices are being developed to be smaller and smaller, higher technical skills are required to make MLCCs having a smaller size and a higher capacity.
- the present invention is directed to a three-dimensional (3D) capacitor capable of easily achieving a high capacitance relative to a size thereof.
- a three-dimensional (3D) capacitor includes an anodic oxide film formed of anodizable metal and having a plurality of holes formed therein in a vertical direction; conductors formed inside the plurality of holes; and a first electrode layer and a second electrode layer formed on at least one surface of the anodic oxide film to be electrically connected to at least some of the conductors, the first and second electrode layers being electrically separated from each other.
- the first and second electrode layers may be formed on the same surface of the anodic oxide film.
- the first electrode layer and the second electrode layer may be alternately arranged.
- the first electrode layer may be formed on one surface of the anodic oxide film.
- the second electrode layer may be formed on another surface of the anodic oxide film which is opposite to the surface the first electrode layer is formed.
- a vertically projected region of the first electrode layer and a vertically projected region of the second electrode layer may be alternately arranged.
- the plurality of holes may be air holes which are formed by anodizing a metal and are arranged regularly.
- the air holes may be formed to pass through the anodic oxide film in the vertical direction.
- the plurality of holes may be air holes which are formed by anodizing a metal and are arranged regularly.
- the anodic oxide film may include a porous layer including the air holes therein, and a barrier layer configured to close one ends of the air holes and formed below the porous layer.
- the anodic oxide film may include a porous layer including air holes which are formed by anodizing a metal and are arranged regularly; and a barrier layer configured to close one ends of the air holes and formed below the porous layer.
- the plurality of holes may be formed to have a larger inner width than the air holes.
- a plurality of anodic oxide films may be stacked in the vertical direction.
- anodic oxide film having an insulating property and a plurality of conductors which are arranged at a high density in the anodic oxide film and to which electric current is supplied By using an anodic oxide film having an insulating property and a plurality of conductors which are arranged at a high density in the anodic oxide film and to which electric current is supplied, a high capacitance, relative to a size of a capacitor, can be easily achieved.
- the capacitors can be easily manufactured.
- FIG. 1 is a perspective view of a three-dimensional (3D) capacitor according to a first embodiment of the present invention
- FIGS. 2A-2C illustrate a cross-sectional view taken along line A-A of FIG. 1 and modified examples thereof;
- FIG. 3 is a plan view of FIG. 1 ;
- FIGS. 4A-4D are cross-sectional views showing the progression from one step to the next in a method of manufacturing a 3D capacitor according to an embodiment of the present invention
- FIG. 5 is a perspective view of a structure obtained by stacking 3D capacitors as shown in FIG. 1 ;
- FIG. 6 is a perspective view of a 3D capacitor according to a second embodiment of the present invention.
- FIG. 7 is a cross-sectional view taken along line B-B of FIG. 6 .
- FIG. 8 is a cross-sectional view of a structure obtained by stacking the 3D capacitors of FIG. 6 .
- a three-dimensional (3D) capacitor 100 includes an anodic oxide film 110 formed by anodizing a metal and in which a plurality of holes 120 are formed in a vertical direction, conductors 140 formed inside the holes 120 , and a first electrode layer 150 and a second electrode layer 160 formed on at least one surface of the anodic oxide film 110 to be electrically connected to at least some of the conductors 140 and to be electrically separated from each other.
- the anodic oxide film 110 may have a cuboid shape.
- the anodic oxide film 110 is formed by anodizing a metal.
- the holes 120 are formed in the anodic oxide film 110 in the vertical direction.
- holes 120 a of the anodic oxide film 110 may be air holes 120 a formed by anodizing a metal and may be arranged regularly.
- the air holes 120 a are formed in a vertical direction of the anodic oxide film 110 . Furthermore, the air holes 120 a are formed to pass through the anodic oxide film 110 in the vertical direction.
- the anodic oxide film 110 of FIG. 2A is formed using only a porous layer 180 having the air holes 120 a therein.
- the anodic oxide film 110 is formed by anodizing a base metal of a metal material and removing the base metal of the metal material.
- the base metal of the metal material may be aluminum (Al), titanium (Ti), tungsten (W), zinc (Zn), or the like, and more preferably, may be aluminum (Al).
- the anodic oxide film 110 is formed of aluminum as the base metal
- the anodic oxide film 110 has a chemical formula of Al 2 O 3 .
- the anodic oxide film 110 has an insulating property.
- a conductor 140 is formed inside each of the air holes 120 a .
- the conductor 140 may be plated inside each of the air holes 120 a by electroless plating or electroplating.
- holes 120 b of an anodic oxide film 110 may be air holes 120 b which are formed by anodizing a metal and are arranged regularly.
- the anodic oxide film 110 may include a porous layer 180 having the air holes 120 b therein, and a barrier layer 185 formed below the porous layer 180 to close one end of each of the air holes 120 b .
- a conductor 140 is formed inside each of the air holes 120 b.
- each of holes 120 c of an anodic oxide film 110 may be formed to have an inner width greater than that of each of air holes 122 .
- the holes 120 c of FIG. 2C are formed to pass through the anodic oxide film 110 in the vertical direction.
- the holes 120 c may be formed by masking and etching one surface of the anodic oxide film 110 .
- a conductor 140 is formed inside each of the holes 120 c .
- the conductor 140 may be plated inside each of the holes 120 c by electroless plating or electroplating.
- the anodic oxide film 110 of FIG. 2C includes a porous layer 180 having air holes 122 formed therein by anodizing a metal and arranged regularly, and a barrier layer 185 formed below the porous layer 180 to close one end of each of the air holes 122 .
- the holes 120 a are the air holes 120 a formed to pass through the anodic oxide film 110 in the vertical direction and the conductors 140 are formed inside the air holes 120 a as illustrated in FIG. 2A will be described as an example below.
- the conductors 140 may be formed inside the air holes 120 a by plating. Electric current may flow in the vertical direction through the inside of the air holes 120 a via the conductors 140 .
- the first electrode layer 150 and the second electrode layer 160 are formed on at least one surface of the anodic oxide film 110 to be electrically separated from each other.
- the first electrode layer 150 and the second electrode layer 160 are formed on a top surface of the anodic oxide film 110 .
- the first electrode layer 150 and the second electrode layer 160 are formed on the same surface of the anodic oxide film 110 .
- the first electrode layer 150 and the second electrode layer 160 are formed so as not to overlap in the vertical direction.
- the first electrode layer 150 may include a plurality of first straight-line parts 153 arranged in parallel to be separated from each other, a first connection part 155 formed perpendicular to the first straight-line parts 153 to connect one ends of the first straight-line parts 153 , and a first power-source connection part 151 connected to the first connection part 155 and to which a power source is connected.
- the second electrode layer 160 includes a plurality of second straight-line parts 163 arranged in parallel to be separated from each other, a second connection part 165 formed perpendicular to the second straight-line parts 163 to connect one ends of the second straight-line parts 163 , and a second power-source connection part 161 connected to the second connection part 165 and to which the power source is connected.
- the first electrode layer 150 and the second electrode layer 160 are alternately arranged. More specifically, the first straight-line parts 153 of the first electrode layer 150 and the second straight-line parts 163 of the second electrode layer 160 are alternately arranged in a horizontal direction to be separated from each other.
- bottoms of the first electrode layer 150 and the second electrode layer 160 are electrically connected to tops of at least some of the conductors 140 .
- electric current supplied from the power source is transferred to the conductors 140 inside the air holes 120 a via the first electrode layer 150 and the second electrode layer 160 .
- the conductors 140 having the positive (+) current and the conductors 140 having the negative ( ⁇ ) current are alternately arranged in the horizontal direction. Furthermore, since the anodic oxide film 110 has the insulating property which does not carry electric current, the anodic oxide film 110 serves as an insulating layer between the conductors 140 having the positive (+) current and the conductors 140 having the negative ( ⁇ ) current. Thus, one capacitor is formed between two adjacent conductors 140 respectively having the positive (+) current and the negative ( ⁇ ) current.
- a plurality of capacitors may be easily formed by forming the conductors 140 in the air holes 120 a of the anodic oxide film 110 . That is, the plurality of capacitors may be easily manufactured.
- a high capacitance, relative to a size of the capacitor may be easily achieved by using the anodic oxide film 110 having the insulating property and the conductors 140 which are arranged at a high density in the anodic oxide film 110 and to which electric current is supplied.
- the first power-source connection part 151 may extend to be in contact with one side surface of the anodic oxide film 110 by being connected to the first connection part 155 .
- the second power-source connection part 161 may extend to be in contact with another side surface of the anodic oxide film 110 opposite to the side surface by being connected to the second connection part 165 .
- a positive (+) current may be supplied to the first power-source connection part 151
- a negative ( ⁇ ) current may be supplied to the second power-source connection part 161 .
- FIGS. 4A-D follow the progression through a method of manufacturing the 3D capacitor 100 of FIG. 2A according to an embodiment of the present invention.
- an anode oxide film 110 having air holes 120 on one surface thereof is formed by anodizing a metal 190 .
- the conductor 140 may be formed in each of the air holes 120 by electroless plating or electroplating.
- the metal 190 is removed such that only the anodic oxide film 110 having the air holes 120 remains.
- the 3D capacitor 100 may be completed by coating one surface of the anodic oxide film 110 with a first electrode layer 150 and a second electrode layer 160 .
- anodic oxide films 110 each having a first electrode layer 150 and a second electrode layer 160 may be stacked in the vertical direction. Thus, a higher capacitance may be achieved.
- An insulating film 195 is arranged between two adjacent 3D capacitors 100 .
- the barrier layer 185 may serve as the insulating film 195 .
- the 3D capacitors 100 may be stacked without the insulating film 195 .
- the 3D capacitors 100 may be stacked without the insulating film 195 even when the air holes 120 are formed to pass through the anodic oxide film 110 in the vertical direction and the conductors 140 are formed inside the air holes 120 .
- the grooves may be formed by etching.
- the second embodiment will be described focusing on differences from the first embodiment without redundantly describing parts of the second embodiment which are the same as those of the first embodiment.
- the first electrode layer 150 a may include a plurality of first straight-line parts 153 a arranged in parallel to be separated from each other, and a first connection part 155 a formed perpendicular to the first straight-line parts 153 a to connect one ends of the first straight-line parts 153 a.
- a first electrode layer 150 a is formed on one surface of an anodic oxide film 110 a and a second electrode layer 160 a is formed on another surface of the anodic oxide film 110 a which is opposite to the surface the first electrode layer 150 a is formed.
- the first electrode layer 150 a may be formed on a top surface of the anodic oxide film 110 a and the second electrode layer 160 a may be formed on a bottom surface of the anodic oxide film 110 a.
- air holes 120 a are formed to pass through the anodic oxide film 110 a in the vertical direction, and conductors 140 a are formed in the air holes 120 a.
- a vertically projected region of the first electrode layer 150 a and a vertically projected region of the second electrode layer 160 a are alternately arranged. More specifically, vertically projected regions of first straight-line parts 153 a of the first electrode layer 150 a and vertically projected regions of second straight-line parts 163 a of the second electrode layer 160 a are alternately arranged.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
Claims (1)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020160071682A KR101811851B1 (en) | 2016-06-09 | 2016-06-09 | Three-dimensional capacitor |
| KR10-2016-0071682 | 2016-06-09 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| US20170358395A1 US20170358395A1 (en) | 2017-12-14 |
| US10998136B2 true US10998136B2 (en) | 2021-05-04 |
Family
ID=60572978
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US15/618,201 Active US10998136B2 (en) | 2016-06-09 | 2017-06-09 | Three-dimensional capacitor |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US10998136B2 (en) |
| KR (1) | KR101811851B1 (en) |
| CN (1) | CN107492446B (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019107130A1 (en) * | 2017-11-30 | 2019-06-06 | 株式会社村田製作所 | Capacitor |
| TWI696331B (en) * | 2019-04-10 | 2020-06-11 | 唐光輝 | Charger device |
| KR102885840B1 (en) * | 2020-03-30 | 2025-11-13 | (주)포인트엔지니어링 | Anodic aluminum oxide structure |
| KR102896286B1 (en) * | 2020-04-24 | 2025-12-05 | (주)포인트엔지니어링 | Laminated anodic oxide structure and guide plate of probe card using the same and probe card comprising thereof |
| EP3992999A1 (en) * | 2020-10-30 | 2022-05-04 | Murata Manufacturing Co., Ltd. | An electrical device comprising a capacitor wherein the dielectric comprises anodic porous oxide, and the corresponding manufacturing method |
| KR102541192B1 (en) * | 2021-02-01 | 2023-06-12 | (주)포인트엔지니어링 | Capacitor and Manufacturing method thereof |
| JP2022119092A (en) * | 2021-02-03 | 2022-08-16 | 太陽誘電株式会社 | Capacitor component |
| KR20240092425A (en) | 2022-12-14 | 2024-06-24 | (주)포인트엔지니어링 | Manufacturing Method Anodic Oxidation Structure, Energy Storage and Manufacturing Method Energy Storage and Using the Anodic Oxidation Structure |
Citations (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07283076A (en) | 1994-04-15 | 1995-10-27 | Nippon Telegr & Teleph Corp <Ntt> | Capacitor |
| US20060138664A1 (en) * | 2002-11-25 | 2006-06-29 | Kabushiki Kaisha Toshiba | Electron source device and display |
| JP2009021553A (en) | 2007-06-14 | 2009-01-29 | Taiyo Yuden Co Ltd | Capacitor and manufacturing method thereof |
| JP2009049212A (en) | 2007-08-20 | 2009-03-05 | Taiyo Yuden Co Ltd | Capacitor and manufacturing method thereof |
| JP2009059990A (en) * | 2007-09-03 | 2009-03-19 | Rohm Co Ltd | Capacitor, electronic component, and manufacturing method for the capacitor |
| US20110013340A1 (en) * | 2009-07-14 | 2011-01-20 | Shinko Electric Industries Co., Ltd | Capacitor and method of manufacturing the same |
| US20120300360A1 (en) * | 2011-03-17 | 2012-11-29 | Taiyo Yuden Co., Ltd. | Capacitor element and capacitor device having the same |
| US20130027841A1 (en) | 2011-07-26 | 2013-01-31 | Samsung Electro-Mechanics Co., Ltd. | Multi-layered ceramic capacitor |
| US20130120901A1 (en) * | 2011-11-10 | 2013-05-16 | Taiyo Yuden Co., Ltd. | Capacitor and method for manufacturing the same |
| US20130329339A1 (en) * | 2012-06-07 | 2013-12-12 | Taiyo Yuden Co., Ltd. | Capacitor |
| US20130329337A1 (en) * | 2012-06-07 | 2013-12-12 | Taiyo Yuden Co., Ltd. | Capacitor |
| US20130335880A1 (en) * | 2012-06-14 | 2013-12-19 | Taiyo Yuden Co., Ltd. | Capacitor, structure and method of forming capacitor |
| US20140009866A1 (en) * | 2012-07-03 | 2014-01-09 | Taiyo Yuden Co., Ltd. | Capacitor, structure and method of forming capacitor |
| US20140063690A1 (en) * | 2012-08-31 | 2014-03-06 | Taiyo Yuden Co., Ltd. | Capacitor |
| US20140153157A1 (en) * | 2012-12-05 | 2014-06-05 | Taiyo Yuden Co., Ltd. | Capacitor |
| US20140226257A1 (en) * | 2013-02-08 | 2014-08-14 | Taiyo Yuden Co., Ltd. | Capacitor and method of manufacturing capacitor |
| JP2015122467A (en) * | 2013-12-25 | 2015-07-02 | 太陽誘電株式会社 | Capacitor |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4956405B2 (en) * | 2007-07-30 | 2012-06-20 | 太陽誘電株式会社 | Capacitor element and method of manufacturing capacitor element |
| US9831303B2 (en) * | 2012-11-02 | 2017-11-28 | Nanya Technology Corporation | Capacitor structure and process for fabricating the same |
-
2016
- 2016-06-09 KR KR1020160071682A patent/KR101811851B1/en active Active
-
2017
- 2017-06-08 CN CN201710426209.8A patent/CN107492446B/en active Active
- 2017-06-09 US US15/618,201 patent/US10998136B2/en active Active
Patent Citations (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07283076A (en) | 1994-04-15 | 1995-10-27 | Nippon Telegr & Teleph Corp <Ntt> | Capacitor |
| US20060138664A1 (en) * | 2002-11-25 | 2006-06-29 | Kabushiki Kaisha Toshiba | Electron source device and display |
| JP2009021553A (en) | 2007-06-14 | 2009-01-29 | Taiyo Yuden Co Ltd | Capacitor and manufacturing method thereof |
| US20090154054A1 (en) * | 2007-06-14 | 2009-06-18 | Taiyo Yuden Co., Ltd. | Capacitor and method of manufacturing the same |
| US8064189B2 (en) | 2007-06-14 | 2011-11-22 | Taiyo Yuden Co., Ltd. | Capacitor structure to enhance capacitive density and reduce equivalent series inductance |
| JP2009049212A (en) | 2007-08-20 | 2009-03-05 | Taiyo Yuden Co Ltd | Capacitor and manufacturing method thereof |
| US7903387B2 (en) | 2007-08-20 | 2011-03-08 | Taiyo Yuden Co., Ltd. | Capacitor having microstructures |
| JP2009059990A (en) * | 2007-09-03 | 2009-03-19 | Rohm Co Ltd | Capacitor, electronic component, and manufacturing method for the capacitor |
| US20110013340A1 (en) * | 2009-07-14 | 2011-01-20 | Shinko Electric Industries Co., Ltd | Capacitor and method of manufacturing the same |
| US20120300360A1 (en) * | 2011-03-17 | 2012-11-29 | Taiyo Yuden Co., Ltd. | Capacitor element and capacitor device having the same |
| US20130027841A1 (en) | 2011-07-26 | 2013-01-31 | Samsung Electro-Mechanics Co., Ltd. | Multi-layered ceramic capacitor |
| KR20130012715A (en) | 2011-07-26 | 2013-02-05 | 삼성전기주식회사 | Multi-layered ceramic capacitor |
| US20130120901A1 (en) * | 2011-11-10 | 2013-05-16 | Taiyo Yuden Co., Ltd. | Capacitor and method for manufacturing the same |
| US20130329339A1 (en) * | 2012-06-07 | 2013-12-12 | Taiyo Yuden Co., Ltd. | Capacitor |
| US20130329337A1 (en) * | 2012-06-07 | 2013-12-12 | Taiyo Yuden Co., Ltd. | Capacitor |
| US20130335880A1 (en) * | 2012-06-14 | 2013-12-19 | Taiyo Yuden Co., Ltd. | Capacitor, structure and method of forming capacitor |
| US20140009866A1 (en) * | 2012-07-03 | 2014-01-09 | Taiyo Yuden Co., Ltd. | Capacitor, structure and method of forming capacitor |
| US20140063690A1 (en) * | 2012-08-31 | 2014-03-06 | Taiyo Yuden Co., Ltd. | Capacitor |
| US20140153157A1 (en) * | 2012-12-05 | 2014-06-05 | Taiyo Yuden Co., Ltd. | Capacitor |
| US20140226257A1 (en) * | 2013-02-08 | 2014-08-14 | Taiyo Yuden Co., Ltd. | Capacitor and method of manufacturing capacitor |
| JP2015122467A (en) * | 2013-12-25 | 2015-07-02 | 太陽誘電株式会社 | Capacitor |
Non-Patent Citations (2)
| Title |
|---|
| Korean Intellectual Property Office, Office Action—Korean Application No. 10-2016-0071682, dated Jun. 14, 2017, 5 pages. |
| Korean Intellectual Property Office, Office Action—Korean Application No. 10-2016-0071682, dated Jun. 14, 2017, 8 pages. (English translation). |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20170139318A (en) | 2017-12-19 |
| US20170358395A1 (en) | 2017-12-14 |
| CN107492446A (en) | 2017-12-19 |
| CN107492446B (en) | 2021-07-06 |
| KR101811851B1 (en) | 2017-12-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10998136B2 (en) | Three-dimensional capacitor | |
| CN109585163B (en) | Capacitor and method for manufacturing the same | |
| CN109545778B (en) | Capacitor assembly | |
| JP2012124458A (en) | Multilayer ceramic capacitor and manufacturing method for the same | |
| KR102004806B1 (en) | Capacitor and method of manufacturing the same | |
| KR101141361B1 (en) | Multi-layer ceramic condenser and fabricating method thereof | |
| KR101141369B1 (en) | A multi-layerd ceramic condenser and fabricating method using thereof | |
| KR101973438B1 (en) | Capacitor Component | |
| KR102248388B1 (en) | Capacitor | |
| US9837218B2 (en) | Composite electronic component and manufacturing method thereof | |
| US9773617B2 (en) | Folding type capacitor comprising through hole | |
| US10163567B2 (en) | Multi-layered aluminum oxide capacitor | |
| KR101623866B1 (en) | Capacitor | |
| US20090161292A1 (en) | Laminated ceramic capacitor | |
| KR102192947B1 (en) | Folding type capacitor comprising aluminium oxide layer | |
| KR101222436B1 (en) | Aluminium electrode for high capacity flim capacitor having multilayered thin film structure and preparation method thereof | |
| KR20160016264A (en) | A capacitor and the method of manufacturing the capacitor | |
| KR102171482B1 (en) | Inserting pin after folding type capacitor comprising aluminium oxide layer | |
| KR20230091307A (en) | Capacitor Component | |
| KR20160016220A (en) | A capacitor and the method of manufacturing the capacitor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AS | Assignment |
Owner name: POINT ENGINEERING CO., LTD., KOREA, REPUBLIC OF Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:AHN, BUM MO;PARK, SEUNG HO;BYUN, SUNG HYUN;SIGNING DATES FROM 20170608 TO 20170609;REEL/FRAME:042658/0221 |
|
| STPP | Information on status: patent application and granting procedure in general |
Free format text: FINAL REJECTION MAILED |
|
| STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |
|
| STCC | Information on status: application revival |
Free format text: WITHDRAWN ABANDONMENT, AWAITING EXAMINER ACTION |
|
| STPP | Information on status: patent application and granting procedure in general |
Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION |
|
| STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
| STPP | Information on status: patent application and granting procedure in general |
Free format text: NOTICE OF ALLOWANCE MAILED -- APPLICATION RECEIVED IN OFFICE OF PUBLICATIONS |
|
| STPP | Information on status: patent application and granting procedure in general |
Free format text: PUBLICATIONS -- ISSUE FEE PAYMENT VERIFIED |
|
| STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
| MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YR, SMALL ENTITY (ORIGINAL EVENT CODE: M2551); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY Year of fee payment: 4 |