US10725487B2

US10725487B2 - Power circuit including ballast element

Info

Publication number: US10725487B2
Application number: US15/446,987
Authority: US
Inventors: Akio Ogura
Original assignee: Toshiba Corp
Current assignee: Toshiba Corp
Priority date: 2016-09-08
Filing date: 2017-03-01
Publication date: 2020-07-28
Anticipated expiration: 2037-03-01
Also published as: JP2018041330A; US20180067509A1; JP6661496B2

Abstract

A power circuit of an embodiment includes an amplifier circuit having a first and a second input. The amplifier circuit receives power from a power input and outputs an output voltage corresponding to a voltage difference between the first and second inputs. A reference voltage circuit supplies a reference voltage to the first input. A feedback circuit supplies a feedback voltage corresponding to the output voltage to the second input. A first ballast capacitance element is between the power input and the first input of the amplifier circuit.

Description

CROSS-REFERENCE TO RELATED APPLICATION

This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2016-175804, filed Sep. 8, 2016, the entire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a power circuit.

BACKGROUND

In the related art, power circuits including switching regulators or linear regulators are used to supply appropriate power-supply voltages to a number of devices included in electronic apparatuses. When linear regulators receive variations in power-supply input to amplifiers (hereinafter referred to as noise), the linear regulators have capabilities to reduce the noise. Power supply ripple rejection ratio (PSRR) characteristics are known as an index indicating a capability to remove noise in a linear regulator. The PSRR characteristics are expressed as a ratio of a variation in input voltage to a variation in an output voltage from the regulator. The variation of the output voltage to a variation (noise) of the power-supply voltage or the reference voltage becomes smaller, and the resistance to noise is improved, as the PSRR becomes higher. To improve the PSRR characteristics, methods of stabilizing a reference voltage source of a linear regulator, adjusting frequency characteristics of an open-loop, or increasing a gain have been considered. In these methods, however, a problem occurs in that a circuit area of the linear regulator increases or the current consumption increases.

DESCRIPTION OF THE DRAWINGS

FIG. 1 is a circuit diagram illustrating an example of a configuration of a linear regulator according to a first embodiment.

FIG. 2 is a cross-sectional view illustrating an example of a configuration of a MIS capacitor.

FIGS. 3A and 3B are diagrams illustrating examples of a configuration of wiring capacitance.

FIGS. 4A to 4E are graphs illustrating waveforms of noise.

FIG. 5 is a graph illustrating PSRR characteristics of a linear regulator according to the first embodiment.

FIG. 6 is a circuit diagram illustrating an example of a configuration of a linear regulator according to a second embodiment.

FIGS. 7A to 7E are graphs illustrating waveforms of noise.

DETAILED DESCRIPTION

In general, according to one embodiment, a power circuit includes an amplifier circuit having a first input and a second input. The amplifier circuit receives power from a power input and outputs an output voltage that corresponds to a voltage difference between the first and second inputs. A reference voltage circuit supplies a reference voltage to the first input of the amplifier circuit. A feedback circuit supplies a feedback voltage that corresponds to the output voltage to the second input of the amplifier circuit. A first ballast capacitance element is between the power input and the first input of the amplifier circuit.

In some examples, the first ballast capacitance element is provided having a capacitance value between the power input and the first input such that a reciprocal (1/PSRR) of a power supply rejection ratio (PSRR) of the amplifier circuit is closer to 0 than when the first ballast capacitance element is not provided.

Hereinafter, exemplary embodiments will be described with reference to the drawings. The present disclosure is not limited to the exemplary embodiments.

First Embodiment

In general, it is necessary to supply power (direct-current power) at an appropriate voltage for each device (for example, a microcomputer, a sensor, and a driver) that is included in an electronic apparatus, such as a mobile terminal. A power circuit, such as a switching regulator and/or a linear regulator, is used to convert the power-supply voltage into a desired voltage.

Power conversion efficiency of a switching regulator is generally good. Therefore, when a power-supply voltage is lowered, the power loss will be small. However, a switching regulator tends to cause ripples (a voltage variation, hereinafter referred to as noise) in the power-supply voltage due to switching of a semiconductor switching element.

A linear regulator is typically inferior to a switching regulator in power conversion efficiency since any voltage difference between an input voltage and an output voltage is dissipated as heat. However, a linear regulator can often supply power with smaller noise since ripples that might be caused by switching do not occur.

Accordingly, a power circuit including a switching regulator and a linear regular is connected such that the switching regulator is usually connected closer to the power supply than the linear regulator. In this case, a power-supply voltage can be efficiently first lowered by the switching regulator and then subsequently converted into a power-supply voltage with small noise as is appropriate for each device (load) by the linear regulator. Thus, the power circuit can supply the power having small noise to the load with high power conversion efficiency.

When a voltage input to the power circuit and a voltage output from the power circuit is small or a current output from the power circuit is small, power may be converted only by the linear regulator without intervention of the switching regulator. In this case, this is because power conversion efficiency is not so important since supply power is low.

Such a linear regulator has a capability to reduce noise included in power from the switching regulator or power from a power supply. Here, either power (or a voltage) from the switching regulator or power (or a voltage) from the power supply may be referred to as power-supply power (or power-supply voltage) from the linear regulator, and thus are also collectively referred to as power-supply power (or power-supply voltage). The capability to remove noise is expressed with a power supply ripple rejection ratio (PSRR). The PSRR is expressed with a ratio of a variation value of a power-supply voltage to a variation value of an output voltage. A variation in an output voltage to a variation (noise) of a power-supply voltage is smaller as the PSRR becomes higher. That is, it can be said that a linear regulator with a high PSRR has high resistance to power-supply noise.

FIG. 1 is a circuit diagram illustrating an example of the configuration of a linear regulator according to a first embodiment. A linear regulator 1 includes an amplifier circuit AMP, a reference voltage circuit REF, a feedback circuit FB, and a first capacitance element C_BP.

The amplifier circuit AMP includes a first input IN1, a second input IN2, a power input IN_POW, and an output unit OUT. The amplifier circuit AMP receives power-supply power from the power input IN_POWand outputs an output voltage (first voltage) V_Oaccording to a voltage difference between the first input IN1 and the second input IN2 to the output OUT. The first input IN1 inputs a reference voltage V_Pfrom the reference voltage circuit REF and the second input IN2 inputs a feedback voltage V_Nfrom the feedback circuit FB. Thus, the amplifier circuit AMP has a function of adjusting the output voltage V_Oso that the feedback voltage V_Nis the same as the reference voltage V_Pand of maintaining the adjusted output voltage V_O. The amplifier circuit AMP may be, for example, a differential amplifier circuit in which transistors provided on a semiconductor substrate are used. Here, Z_AMPis an output impedance of the amplifier circuit AMP.

The reference voltage circuit REF generates a voltage V_DCthat does not depend on a power-supply voltage or temperature. The reference voltage circuit REF is connected to the first input IN1 of the amplifier circuit AMP and inputs the reference voltage V_Pto the first input IN1. The reference voltage circuit REF has output impedance Z_DC, and inputs the generated voltage V_DCas reference voltage V_Pto the first input IN1. The reference voltage circuit REF may be, for example, a band gap type power circuit.

The feedback circuit FB is connected between the output OUT and the second input IN2 and feeds a feedback voltage corresponding to the output voltage back to the second input IN2. The feedback circuit FB includes a first resistance element R1 and a second resistance element R2. The first resistance element R1 and the second resistance element R2 are connected in series between the output OUT and a low voltage supply GND. The first resistance element R1 is connected between the low voltage supply GND and a node ND, and the second resistance element R2 is connected between the node ND and the output OUT. The node ND is electrically connected to the second input IN2 and feeds the feedback voltage V_N, as obtained by dividing the output voltage V_Oby the first resistance element R1 and the second resistance element R2, back to the second input IN2. The first resistance element R1 and the second resistance element R2 may be, for example, wiring resistors or diffusion layer resistors. The low voltage supply GND may be lower than an input voltage V_POWto be input to the power input IN_POWor may be, for example, a ground voltage supply (ground).

The first capacitance element C_BPis connected between the power input IN_POWand the first input IN1. The first capacitance element C_BPis provided as ballast capacitance to prevent noise from being generated in the output voltage V_Oof the amplifier circuit AMP by parasitic capacitances C_SN, C_SP, and C_SOand to improve the power supply ripple rejection ratio (PSRR) of the amplifier circuit AMP. The first capacitance element C_BPmay be, for example, a metal insulator semiconductor (MIS) capacitor or may be wiring capacitance.

FIG. 2 is a cross-sectional view illustrating an example of the configuration of a MIS capacitor. When a MIS capacitor is used as the first capacitance element C_BP, the first capacitance element C_BPincludes a substrate 10, a gate insulation film (first insulation film) 20, and a gate electrode 30. The substrate 10 is, for example, a semiconductor substrate, such as a doped silicon substrate, and serves as a conductor. The gate insulation film 20 is provided on the substrate 10 and may be formed of, for example, an insulating material such as a silicon oxide film. The gate electrode 30 is provided on the gate insulation film 20 and may be formed of, for example, a conductive material such as polysilicon or metal. The substrate 10, serving as the first electrode, is electrically connected to the first input IN1. The gate electrode 30 serving as the second electrode is electrically connected to the power input IN_POW. Thus, the first capacitance element C_BPfunctions as capacitance between the power input IN_POWand the first input IN1. The capacitance of the first capacitance element C_BPmay be adjusted by adjusting the thickness of the gate insulation film 20 and/or a facing area of the gate electrode 30 and the substrate 10. The gate insulation film 20 may be formed of the same material as a MISFET gate insulation film provided on the substrate 10. The gate electrode 30 may be formed of the same material as a MISFET gate electrode provided on the substrate 10.

FIGS. 3A and 3B are diagrams illustrating examples of the configuration of a wiring capacitance. When wiring capacitance is used as the first capacitance element C_BP, the first capacitance element C_BPincludes a power wiring 40, a first wiring 50, and an insulation film (second insulation film) 60. The power wiring 40 extends from the power input IN_POWto the amplifier circuit AMP. For example, the power wiring 40 may be a wiring between a power terminal of the linear regulator 1 receiving input power (power-supply power) from a power supply or a switching regulator (not illustrated) and a power terminal of the amplifier circuit AMP. The first wiring 50 is a wiring between the reference voltage circuit REF and the first input IN1. The power wiring 40 and the first wiring 50 are both formed of, for example, a conductive material such as polysilicon or metal. The insulation film 60 is provided between the power wiring 40 and the first wiring 50 and electrically insulates the power wiring 40 from the first wiring 50. The insulation film 60 may be, for example, an insulating material such as a silicon oxide. The power wiring 40 and the first wiring 50 extend in substantially parallel with each other for at least some portion of their length. Thus, the power wiring 40, the first wiring 50, and the insulation film 60 form a capacitance between the power input IN_POWand the first input IN1. The capacitance of the first capacitance element C_BPmay be adjusted by changing a distance between the power wiring 40 and the first wiring 50 (i.e., the thickness of the insulation film 60) or the lengths of the portions of the power wiring 40 and the first wiring 50 that are substantially parallel to each other.

The power wiring 40 and the first wiring 50 may extend in substantially parallel in a straight line manner, as illustrated in FIG. 3A, or may extend in substantially parallel in a staggered disposition (serpentine), as illustrated in FIG. 3B.

The power wiring 40, the first wiring 50, and the insulation film 60 illustrated in FIGS. 3A and 3B may be arranged in substantially parallel (horizontal direction) to the surface of the substrate 10 on which the amplifier circuit AMP is provided or they may be stacked in the substantially perpendicular direction (vertical direction) to the surface of the substrate 10. That is, the power wiring 40 and the first wiring 50 may be wiring provided in the same layer or may be stacked wirings in different layers. The capacitance of the first capacitance element C_BPwill be described below.

In the foregoing configuration, the linear regulator 1 according to the first embodiment functions to output the substantially constant output voltage V_Ofrom the output unit OUT to a load (not illustrated).

Here, the parasitic capacitances C_SN, C_SP, and C_SOwill be described.

The parasitic capacitance C_SNoccurs between the power input IN_POWand the second input IN2 and includes, for example, inter-electrode capacitance or inter-wiring capacitance of transistors included in the amplifier circuit AMP. Noise from the input voltage V_POWis generated in (is mixed with) the output voltage V_Ovia the parasitic capacitance C_SNand the second resistance element R2 in some cases.

The parasitic capacitance C_SPoccurs between the power input IN_POWand the first input IN1 and includes, for example, inter-electrode capacitance or inter-wiring capacitance of transistors included in the amplifier circuit AMP. Noise of the input voltage V_POWis divided between the output impedance Z_DCof the reference voltage circuit REF and the parasitic capacitance C_SPand is generated in (is mixed with) the reference voltage V_Pis some cases. In this case, the noise of the input voltage V_POWis also generated in the output voltage V_O.

The parasitic capacitance C_SOoccurs between the power input IN_POWand the output OUT and includes, for example, inter-electrode capacitance or inter-wiring capacitance of transistors included in the amplifier circuit AMP. Noise of the input voltage V_POWis divided between the output impedance Z_AMPof the amplifier circuit AMP and the parasitic capacitance C_SOand is generated in (is mixed with) the output voltage V_Oin some cases.

In this way, the noise of the input voltage V_POWis generated in the output voltage V_Ovia the parasitic capacitances C_SN, C_SP, and C_SO. The mixing of the noise is a cause of deterioration in noise removal characteristics (that is, the PSRR) of the linear regulator.

Power noise generated in the output voltage V_Ois obtained by superposition of the noise originating from the parasitic capacitances C_SN, C_SP, and C_SO. A phase of the noise transmitted via the parasitic capacitances C_SN, C_SP, and C_SOis advanced by 90 degrees from a phase of the noise of the input voltage V_POW.

FIGS. 4A to 4E are graphs illustrating waveforms of noise. The vertical axis represents the magnitude of a noise component (voltage) and the horizontal axis represents a phase (time). FIG. 4A illustrates noise of the input voltage V_POW. FIG. 4B illustrates noise transmitted via the parasitic capacitance C_SPin the output OUT. FIG. 4C illustrates noise transmitted via the parasitic capacitance C_SNin the second input IN2 and the output OUT. In FIG. 4C, a dotted line indicates the noise in the second input IN2 and a solid line indicates the noise in the output OUT. FIG. 4D illustrates noise transmitted via the parasitic capacitance C_SOin the output OUT. FIG. 4E illustrates noise (ballast noise) transmitted via the first capacitance element C_BPin the output OUT. The waveforms of the noise in FIGS. 4A to 4E are depicted to facilitate the understanding conveniently and may be different from waveforms of actual noise in real device.

A phase of the noise of the input voltage V_POWis advanced by 90 degrees when the noise is transmitted via the capacitance (C_SP, C_SN, C_SO, or C_BP). However, when noise is input to an inverted input terminal as in the second input IN2 in FIG. 1, as illustrated in FIG. 4C, the phase of the noise is inverted at 180 degrees in the output OUT. That is, the phase of the noise of the input voltage V_POWis advanced by 90 degrees by the parasitic capacitance C_SN, and then further is inverted at 180 degrees from the inverted input (the second input IN2) of the amplifier circuit AMP and is transmitted to the output OUT.

On the other hand, as illustrated in FIG. 4B, the phase of the noise in the first input IN1 is not inverted in the output unit OUT. That is, the phase of the noise of the input voltage V_POWis transmitted to the output OUT in a state in which the phase of the noise is advanced by 90 degrees by the parasitic capacitance C_SP. As illustrated in FIG. 4D, the phase of the noise transmitted to the output voltage V_Ovia the parasitic capacitance C_SOis also transmitted to the output OUT in a state in which the phase of the noise is advanced by 90 degrees by the parasitic capacitance C_SO.

In this way, the phase of the noise by the parasitic capacitance C_SNis inverted with respect to the phase of the noise by the parasitic capacitances C_SPand C_SO. Since the noise mixed in the output voltage V_Oby the parasitic capacitances C_SP, C_SN, and C_SOis a sum of a curve of FIG. 4B, a curve of FIG. 4D, and a solid curved line of FIG. 4C, the noise by the parasitic capacitance C_SNand the noise by the parasitic capacitances C_SPand C_SOoperate to be cancel each other.

Normally, the parasitic capacitances C_SP, C_SN, and C_SOare not intentionally provided, but are accidentally occurring or unavoidable capacitance. Accordingly, it would be merely an accident and considerably rare that the absolute value of the noise by the parasitic capacitance C_SNwould be the same as the absolute value of the noise by the parasitic capacitances C_SPand C_SOand such that noise of the output voltage V_Owould not be generated.

However, in this embodiment, the first capacitance element C_SPis intentionally provided as ballast capacitance to prevent noise being mixed in the output voltage V_Odue to the parasitic capacitances C_SP, C_SN, and C_SO. For example, when the absolute value of the noise by the parasitic capacitance C_SNis greater than the absolute value of the noise by the parasitic capacitances C_SPand C_SO, as illustrated in FIG. 1, the first capacitance element C_BPcan be connected between the power input IN_POWand the first input IN1 and provided in parallel to the parasitic capacitance C_SP. Thus, a ballast noise component illustrated in FIG. 4E is also added to the output voltage V_O, and thus the total sum of the noise in the output voltage V_Ois reduced in magnitude.

For example, when NV_OPis a noise component mixed in the output voltage V_Oby the parasitic capacitance C_SPand the first capacitance element C_SP, NV_OPis expressed by Expression 1:
NV _OP=(1+R ₂ /R ₁)×NV _P Expression 1:
where NV_Pis assumed to be a noise component mixed in the first input IN1 by the parasitic capacitance C_SPand the first capacitance element C_BP. In the amplifier circuit AMP, the feedback voltage V_Nis assumed to be the same as the reference voltage V_P.

NV_Pis expressed by Expression 2:
NV _P ={Z _DC/(Z _DC+1/(jω(C _SP +C _BP)))}×V _POW Expression 2:
Here, j is a complex number, ω is 2πf, and f is a frequency of noise.

Expression 3 is established based on Expressions 1 and 2:
NV _OP=(1+R ₂ /R ₁)×[{Z _DC/(Z _DC+1/(jω(C _SP +C _BP)))}×V _POW] Expression 3:
Here, a phase of NV_OPis advanced by 90 degrees from V_POWby the parasitic capacitance C_SPand the first capacitance element C_BP.

When NV_ONis a noise component mixed in the output voltage V_Ofrom the second input IN2 by the parasitic capacitance C_SN, NV_ONis expressed by Expression 4:
NV _ON =−R ₂/(1/(jωC _SN))×V _POW Expression 4:
Here, a phase of NV_ONis delayed by 90 degrees as compared to V_POW(an inverted state with respect to the phase of NV_OP), as described. That is, when V_POWis a positive voltage, NV_ONis a negative voltage component.

When NV_OOis a noise component mixed in the output voltage V_Ofrom the amplifier circuit AMP by the parasitic capacitance C_SO, NV_OOis expressed by Expression 5:
NV _OO ={Z _AMP/(Z _AMP+1/(jωC _SO))}×V _POW Expression 5:
Here, a phase of NV_OOis advanced by 90 degrees from V_POW. That is, when V_POWis a positive voltage, NV_OOis a positive voltage component.

A noise component NV_O(NV_OP+NV_ON+NV_OO) generated in the output voltage V_Oby the parasitic capacitances C_SP, C_SN, and C_SOand the first capacitance element C_BPis expressed by Expression 6:
NV _O={(1+R ₂ /R ₁)Z _DC/(Z _DC+1/(jω(C _SP +C _BP)))−R ₂/(1/(jωC _SN))+Z _AMP/(Z _AMP+(1/jωC _SO))}×V _POW Expression 6:
In order to bring the noise component NV_Oclose to zero, the absolute value of the right side of Expression 6 should approach zero. A reciprocal (l/PSRR) of PSRR is expressed by Expression 7:
1/PSRR=∂NV _O /∂V _POW={(1+R ₂ /R ₁)Z _DC/(Z _DC+1/(jω(C _SP +C _BE)))−R ₂/(1/(jωC _SN))+Z _AMP/(Z _AMP+(1/jωC _SO))} Expression 7:
By bringing the absolute value of the right side of Expression close to zero, it is possible to obtain high PSRR characteristics.

Here, when the first capacitance element C_BPis not provided, a method of bringing, for example, one or a plurality of C_SP, C_SN, C_SO, Z_DC, and Z_AMPclose to zero can be used to bring the absolute value of the right side of Expression 7 close to zero. However, in this method, there is a concern with increasing a circuit area or a current consumption, as described above.

Accordingly, in the embodiment, the first capacitance element C_BPis provided as ballast capacitance so that a positive component (a noise component with the same polarity as the input voltage V_POW) of Expression 7 is the same as a negative component (a noise component with a reverse polarity to the input voltage V_POW).

In the right side of Expression 7, the first and third terms related to the parasitic capacitances C_SPand C_SOand the first capacitance element C_BP, are positive components, and the second term related to the parasitic capacitance C_SNis a negative component. Here, in the first embodiment, when the first capacitance element C_BPis not provided, the reciprocal (l/PSRR) of the PSRR is assumed to be smaller than 0. In this case, the positive components related to the parasitic capacitances C_SPand C_SOare less than the negative component related to the parasitic capacitance C_SN. Accordingly, by providing the first capacitance element C_BPin parallel to the parasitic capacitance C_SP, it is possible to actually increase the positive component. Thus, the linear regulator 1 according to the embodiment causes the absolute value of the reciprocal (1/PSRR) of the PSRR to be closer to 0 than when the first capacitance element C_BPis not provided.

In this way, in the linear regulator 1 according to the embodiment, the first capacitance element C_BPis connected between the power input IN_POWand the first input IN1, and thus the noise mixed in the output voltage V_Ocan approach zero (almost cancelled) by the parasitic capacitances C_SN, C_SP, and C_SO. Thus, the PSRR characteristics of the linear regulator 1 are improved.

FIG. 5 is a graph illustrating PSRR characteristics of the linear regulator 1 according to the first embodiment. The vertical axis of the graph represents PSRR (dB). The horizontal axis represents a frequency (Hz) of power noise mixed in the output voltage V_O.

A line L0 indicates the PSRR characteristic of a linear regulator in which the first capacitance element C_BPis not provided. A line L1 indicates PSRR characteristics of a linear regulator in which the first capacitance element C_BPaccording to the first embodiment is provided.

For example, referring to power noise with 10³Hz frequency, the PSRR of the line L1 is higher by about 12 dB than the PSRR of the line L0. Accordingly, it can be understood that the PSRR characteristics can be considerably improved by providing the first capacitance element C_BPas in the first embodiment.

The capacitance of the first capacitance element C_BPat which the absolute value of 1/PSRR approaches 0 can be determined by an actual measured value of the PSRR characteristics, a statistical averaged value, or a simulation. Since the capacitance of the first capacitance element C_BPis set to balance positive and negative components of the power noise, a very small capacitance may be set. For example, the capacitance of the first capacitance element C_BPset by a simulation depicted in FIG. 5 is about 20 fF (femtofarads), a layout area of the linear regulator 1 is not greatly increased, and an area penalty is small relative to the improved performance. Accordingly, the linear regulator 1 according to the first embodiment has good PSRR characteristics and can be manufactured at low cost without significantly increasing a chip size. In the linear regulator 1 according to the first embodiment, an increase in current consumption is avoided since the output impedances Z_AMPand Z_DCare not changed.

Second Embodiment

FIG. 6 is a circuit diagram illustrating an example of the configuration of a linear regulator according to a second embodiment. A linear regulator 1 according to the second embodiment includes a second capacitance element C_BN. The second capacitance element C_BNis connected between a power input IN_POWand a second input IN2. The second capacitance element C_BNis provided as ballast capacitance to prevent noise being generated in an output voltage V_Oof an amplifier circuit AMP by parasitic capacitances C_SN, C_SP, and C_SOand to improve a power supply ripple rejection ratio (PSRR) of the amplifier circuit AMP. As with the first capacitance element C_BP, the second capacitance element C_BNmay be, for example, a MIS capacitor or may be wiring capacitance as illustrated in FIG. 2 or 3A and 3B. The other remaining configuration details of the second embodiment may be considered the same as the corresponding configuration of the first embodiment.

FIGS. 7A to 7E are graphs illustrating the waveforms of noise. FIG. 7A illustrates noise of the input voltage V_POW. FIG. 7B illustrates noise transmitted via the parasitic capacitance C_SPin the output OUT. FIG. 7C illustrates noise transmitted via the parasitic capacitance C_SNin the second input IN2 and the output OUT. In FIG. 7C, a dotted line indicates the noise in the second input IN2 and a solid line indicates the noise in the output OUT. FIG. 7D illustrates noise transmitted via the parasitic capacitance C_SOin the output OUT. FIG. 7E illustrates noise (ballast noise) transmitted via the second capacitance element C_BNin the output OUT. In FIG. 7E, a dotted line indicates the noise in the second input IN2 and a solid line indicates the noise in the output unit OUT. The waveforms of the noise in FIGS. 7A to 7E are depicted to facilitate the understanding conveniently and are typically different from waveforms of actual noise.

As described with reference to FIGS. 4A to 4E, the phase of the noise from the parasitic capacitance C_SNis inverted at 180 degrees with respect to the phase of the noise from the parasitic capacitances C_SPand C_SO. Since the noise mixed in the output voltage V_Oby the parasitic capacitances C_SPC_SN, and C_SOis a sum of a curve in FIG. 7B, a curve in FIG. 7D, and a solid curved line in FIG. 7C, the noise by the parasitic capacitance C_SNand the noise by the parasitic capacitances C_SPand C_SOoperate to cancel each other.

As described above, it is generally an accident and considerably rare that the absolute value of the noise from the parasitic capacitance C_SNis the same as the absolute value of the noise from the parasitic capacitances C_SPand C_SOsuch that noise in the output voltage V_Owould not be generated.

Accordingly, in the second embodiment, the second capacitance element C_BNis intentionally provided as ballast capacitance to prevent noise being mixed in the output voltage V_Ofrom the parasitic capacitances C_SPC_SN, and C_SO. For example, when the absolute value of the noise mixed in the output voltage V_Oby the parasitic capacitance C_SNis less than the absolute value of the noise mixed in the output voltage V_Oby the parasitic capacitances C_SPand C_SO, as illustrated in FIG. 6, the second capacitance element C_BNis connected between the power input IN_POWand the second input IN2 and is provided in parallel to the parasitic capacitance C_SN. Thus, a ballast noise component indicated by the solid line in FIG. 7E is further added to the output voltage V_O, and thus the total sum of the noise mixed in the output voltage V_Ois reduced in absolute value.

For example, in the second embodiment, NV_Pis expressed by Expression 8:
NV _P ={Z _DC/(Z _DC+1/(jωC _SP))}×V _POW Expression 8:
Expression 9 is established based on Expressions 1 and 8:
NV _OP=(1+R ₂ /R ₁)×[{Z _DC/(Z _DC+1/(jωC _SP))}×V _POW] Expression 9:
Here, a phase of NV_OPis advanced by 90 degrees from V_POWby the parasitic capacitance C_SP.

When NV_ONis a noise component mixed in the output voltage V_Ofrom the second input IN2 by the parasitic capacitance C_SNand second capacitance element C_BN, NV_ONis expressed by Expression 10:
NV _ON =−R ₂/(1/(jωC _SN +C _BN)))×V _POW Expression 10:
Here, a phase of NV_ONis delayed by 90 degrees than V_POW(an inverted state with respect to the phase of NV_OP), as described. That is, when V_POWis a positive voltage, NV_ONis a negative voltage component.

NV_OOis a noise component mixed in the output voltage V_Ofrom the amplifier circuit AMP by the parasitic capacitance C_SO, NV_OOis the same as Expression 5 described above.

Here, a phase of NV_OOis advanced by 90 degrees from V_POWThat is, when V_POWis a positive voltage, NV_OOis a positive voltage component.

A noise component NV_O(NV_OP+NV_ON+NV_OO) generated in the output voltage V_Oby the parasitic capacitances C_SP, C_SN, and C_SOand the second capacitance element C_BNis expressed by Expression 11:
NV _O={(1+R ₂ /R ₁)Z _DC/(Z _DC+1/(jωC _SP))−R ₂/(1/(jω(C _SN +C _BN)))+Z _AMP/(Z _AMP+(1/(jωC _SO))}×V _POW Expression 11:

In order to bring the noise component NV_Oclose to zero, the absolute value of the right side of Expression 11 may approach zero. In the second embodiment, a reciprocal (1/PSRR) of PSRR is expressed by Expression 12:
1/PSRR={(1+R ₂ /R ₁)Z _DC/(Z _DC+1/(jωC _SP))−R ₂/(1/(jω(C _SN +C _BN)))+Z _AMP/(Z _AMP+(1/jωC _SO))} Expression 12:
By bringing the absolute value of the right side of Expression close to zero, it is possible to obtain high PSRR characteristics.

In the second embodiment, the second capacitance element C_BNis provided as ballast capacitance so that a positive component (a noise component with the same polarity as the input voltage V_POW) of Expression 12 is the same as a negative component (a noise component with a reverse polarity to the input voltage V_POW).

In the right side of Expression 12, the first and third terms related to the parasitic capacitances C_SPand C_SOare positive components, and the second term related to the parasitic capacitance C_SNand the second capacitance element C_BNis a negative component. Here, in the second embodiment, when the second capacitance element C_BNis not provided, the reciprocal (1/PSRR) of the PSRR is assumed to be greater than 0. In this case, the negative component related to the parasitic capacitance C_SNis less than the positive components related to the parasitic capacitances C_SPand C_SO. Accordingly, by providing the second capacitance element C_BNin parallel to the parasitic capacitance C_SN, it is possible to actually increase the negative component. Thus, in the linear regulator 1 according to the second embodiment, the absolute value of the reciprocal (1/PSRR) of the PSRR can be brought closer to 0 than when the second capacitance element C_BNis not provided. Thus, in the second embodiment, it is possible to obtain the same advantages as those of the first embodiment.

The first and second embodiments may be combined.

While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the disclosure. Indeed, the novel embodiments described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made without departing from the spirit of the disclosure. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the disclosure.

Claims

What is claimed is:

1. A power circuit, comprising:

an amplifier circuit having a first input and a second input, the amplifier circuit receiving power from a power input and outputting an output voltage corresponding to a voltage difference between the first and second inputs;

a reference voltage circuit that supplies a reference voltage to the first input of the amplifier circuit;

a feedback circuit that supplies a feedback voltage corresponding to the output voltage to the second input of the amplifier circuit; and

a first ballast capacitance element electrically connected between the power input and the first input of the amplifier circuit, wherein

the first ballast capacitance element has a capacitance value such that a reciprocal (1/PSRR) of a power supply rejection ratio (PSRR) of the amplifier circuit is closer to 0 than when the first ballast capacitance element is not provided, and

the first ballast capacitance element is directly connected between the power input and the first input of the amplifier circuit.

2. The power circuit according to claim 1, wherein

the feedback circuit comprises:

a first resistance element and a second resistance element connected in series between a low supply voltage terminal and the output voltage of the amplifier circuit, and

a node between the first and second resistance elements is connected to the second input of the amplifier circuit.

3. The power circuit according to claim 1, wherein the first ballast capacitance element comprises:

a first electrode on a first planar device level and electrically connected to the first input of the amplifier circuit;

a second electrode on a second planar device level and electrically connected to the power input; and

a first insulation film between the first and second planar device levels.

4. The power circuit according to claim 1, wherein the first ballast capacitance element comprises:

a portion of a power wiring connecting the power input to the amplifier circuit;

a portion of a first wiring connecting the reference voltage circuit and the first input of the amplifier circuit; and

an insulation film between the portion of the power wiring and the portion of the first wiring.

5. The power circuit according to claim 4, wherein the portion of the power wiring and the portion of the first wiring are on a same planar device level.

6. The power circuit according to claim 4, wherein the portion of the power wiring is on a first planar device level and the portion of the first wiring is on a second planar device level different from the first planar device level.

7. The power circuit according to claim 4, wherein the portion of the power wiring and the portion of the first wiring are in a serpentine pattern.

8. The power circuit according to claim 4, wherein the portion of the power wiring and the portion of the first wiring are straight line segments.

9. The power circuit according to claim 1, wherein the first ballast capacitance element comprises a wiring capacitance formed between a portion of a first wiring that connects the power input to the amplifier circuit and a portion of a second wiring connecting the reference voltage circuit to the first input of the amplifier circuit.

10. The power circuit according to claim 1, wherein the first ballast capacitance element comprises:

a first electrode connected to the power input; and

a second electrode connected to to the first input of the amplifier circuit.

11. The power circuit according to claim 1, further comprising:

a second ballast capacitance element between the power input and the second input of the amplifier circuit.

12. A power circuit, comprising:

a first ballast capacitance element electrically connected between the power input and the second input of the amplifier circuit, wherein

the first capacitance element is directly connected between the power input and the second input of the amplifier circuit.

13. The power circuit according to claim 12, wherein

the feedback circuit comprises:

14. The power circuit according to claim 12, wherein the first ballast capacitance element comprises:

a first electrode on a first planar device level and electrically connected to the second input of the amplifier circuit;

a first insulation film between the first and second planar device levels.

15. The power circuit according to claim 12, wherein the first ballast capacitance element comprises:

a portion of a first wiring connecting the node of the feedback circuit to the second input of the amplifier circuit; and

16. The power circuit according to claim 15, wherein the portion of the power wiring and the portion of the first wiring are on a same planar device level.

17. The power circuit according to claim 12, wherein the first ballast capacitance element comprises a wiring capacitance formed between a portion of a first wiring that connects the power input to the amplifier circuit and a portion of a second wiring connecting the node of the feedback circuit to the second input of the amplifier circuit.

18. The power circuit according to claim 12, further comprising:

a second ballast capacitance element between the power input and the first input of the amplifier circuit.