US10571798B2 - Photolithography mask plate - Google Patents
Photolithography mask plate Download PDFInfo
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- US10571798B2 US10571798B2 US15/684,350 US201715684350A US10571798B2 US 10571798 B2 US10571798 B2 US 10571798B2 US 201715684350 A US201715684350 A US 201715684350A US 10571798 B2 US10571798 B2 US 10571798B2
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- carbon nanotube
- substrate
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- photolithography mask
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- 238000000206 photolithography Methods 0.000 title claims abstract description 113
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 208
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 204
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 204
- 239000000758 substrate Substances 0.000 claims abstract description 129
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 78
- 239000002238 carbon nanotube film Substances 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 25
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 238000002834 transmittance Methods 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 2
- 239000000395 magnesium oxide Substances 0.000 claims description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052976 metal sulfide Inorganic materials 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 110
- 238000004519 manufacturing process Methods 0.000 description 35
- 238000000034 method Methods 0.000 description 32
- 239000002131 composite material Substances 0.000 description 29
- 238000005530 etching Methods 0.000 description 12
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000011651 chromium Substances 0.000 description 7
- 229910052804 chromium Inorganic materials 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 230000001678 irradiating effect Effects 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000003960 organic solvent Substances 0.000 description 7
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 6
- 239000002086 nanomaterial Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- -1 polyethylene terephthalate Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000011780 sodium chloride Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000002079 double walled nanotube Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002048 multi walled nanotube Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002109 single walled nanotube Substances 0.000 description 2
- SCYULBFZEHDVBN-UHFFFAOYSA-N 1,1-Dichloroethane Chemical compound CC(Cl)Cl SCYULBFZEHDVBN-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000032912 absorption of UV light Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/48—Protective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
Definitions
- the subject matter herein generally relates to a photolithography mask plate.
- microstructures can be applied to multiple fields, such as special surfaces of optical devices, hydrophobic material, anti-reflection surfaces.
- a microstructure is generally provided in a light guide plate in order to improve the light emission efficiency in the optical devices.
- the main methods for making the microstructures are photolithography, etching and so on. Photolithography is widely used because of the simple process, easy operation and preparation in a large area.
- the mask material in photolithography are generally plastic, glass or pattern metal.
- the microstructures obtained by these mask material have low dimensional accuracy. Also it is difficult to obtain microstructures in nanoscale.
- FIG. 1 is a flow chart of one exemplary embodiment of a method of making microstructure.
- FIG. 2 is a Scanning Electron Microscope (SEM) image of the drawn carbon nanotube film.
- FIG. 3 is a Scanning Electron Microscope (SEM) image of a carbon nanotube structure consisting of a plurality of stacked drawn carbon nanotube precursor films.
- FIG. 4 is a flow chart of a method of disposing the carbon nanotube layer on the second substrate.
- FIG. 5 is a structural schematic view of a patterned photoresist microstructure.
- FIG. 6 is a structural schematic view of a patterned photoresist microstructure.
- FIG. 7 is a flow chart of a lift-off method of making micro-nanostructure.
- FIG. 8 is a flow chart of one exemplary embodiment of a method of making micro-nanostructure.
- FIG. 9 is a structural schematic view of a photolithography mask plate.
- FIG. 10 is a structural schematic view of a photolithography mask plate.
- FIG. 11 is a flow chart of one exemplary embodiment of the method of making micro-nanostructure.
- FIG. 12 is a flow chart of one exemplary embodiment of the method of making micro-nanostructure.
- FIG. 13 is a structural schematic view of a photolithography mask plate used in the method of FIG. 11 .
- FIG. 14 is a flow chart of one exemplary embodiment of a method of making the lithographic mask of FIG. 13 .
- FIG. 15 is a flow chart of one exemplary embodiment of the method of making micro-nanostructure.
- FIG. 16 is a structural schematic view of a photolithography mask plate used in the method of FIG. 15 .
- FIG. 17 is a flow chart of one exemplary embodiment of a method of making the lithographic mask of FIG. 16 .
- FIG. 18 is a flow chart of one exemplary embodiment of the method of making micro-nanostructure.
- FIG. 19 is a structural schematic view of a photolithography mask plate used in the method of FIG. 18 .
- FIG. 20 is a flow chart of one exemplary embodiment of the method of making the lithographic mask of FIG. 19 .
- connection can be such that the objects are permanently connected or releasably connected.
- substantially is defined to be essentially conforming to the particular dimension, shape or other word that substantially modifies, such that the component need not be exact.
- comprising means “including, but not necessarily limited to”; it specifically indicates open-ended inclusion or membership in a so-described combination, group, series and the like. It should be noted that references to “an” or “one” exemplary embodiment in this disclosure are not necessarily to the same exemplary embodiment, and such references mean at least one.
- an exemplary embodiment of a method of making microstructures comprises:
- the first substrate 150 can be insulating materials such as silica or silicon nitride.
- the first substrate 150 can also be conductive materials such as gold, aluminum, nickel, chromium, or copper.
- the first substrate 150 can be semiconductor materials such as silicon, gallium nitride, or gallium arsenide.
- the first substrate 150 is a silicon wafer.
- the type of the photoresist layer 160 can be negative or positive.
- the photoresist layer 160 can be S9912 positive photoresist or SU8 negative photoresist.
- the photoresist layer 160 can be directly applied to the surface of the first substrate 150 by spin coating.
- the thickness of the photoresist layer 160 can be in a range of about 50 nm to about 200 nm. When the thickness of the photoresist layer 160 is too thin, graphic contrast after photolithography decreases. When the thickness of the photoresist layer 160 is too thick, patterned photoresist can easily create slopes near the edge of the pattern.
- the photoresist layer 160 is S9912 positive photoresist, and the thickness of the photoresist layer 160 is about 100 nm.
- the photolithography mask plate 100 provides a patterned mask.
- the photolithography mask plate 100 includes at least a second substrate 110 and a composite layer 140 located on the surface of the second substrate 110 .
- the composite layer 140 includes a carbon nanotube layer 120 and a cover layer 130 .
- the carbon nanotube layer 120 is directly located on the surface of the second substrate 110 .
- the cover layer 130 covers the carbon nanotube layer 120 so that the carbon nanotube layer 120 is sandwiched between the cover layer 130 and second substrate 110 .
- the cover layer 130 is continuously and directly attached to a surface of the carbon nanotube layer 120 .
- the cover layer 130 is bonded to the carbon nanotube layer 120 to form the composite layer 140 . Due to portions of the cover layer 130 can extend through the holes of the carbon nanotube layer 120 to be in direct contact with the second substrate 110 , the cover layer 130 can fix the carbon nanotube layer 120 on the second substrate 110 .
- the photolithography mask plate 100 covers the photoresist layer 160 .
- the photolithography mask plate 100 is located on the surface of the photoresist layer 160 away from the first substrate 150 .
- the composite layer 140 is in direct contact with the surface of the photoresist layer 160 away from the first substrate 150 .
- the second substrate 110 is spaced from the photoresist layer 160 .
- the second substrate 110 can be in direct contact with the photoresist layer 160 so that the second substrate 110 sandwiched between the composite layer 140 and the photoresist layer 160 .
- the composite layer 140 is spaced from the photoresist layer 160 .
- the composite layer 140 When the composite layer 140 is located on the surface of the photoresist layer 160 , the composite layer 140 is not completely in direct contact with the surface of the photoresist layer 160 , and there may be air gaps between partial surfaces of the composite layer 140 and surfaces of the photoresist layer 160 .
- the second substrate 110 serves as a support.
- Materials of the second substrate 110 can be rigid materials (e.g., p-type or n-type silicon, quartz, silicon with a silicon dioxide layer formed thereon, crystal, crystal with an oxide layer formed thereon), or flexible materials (e.g., plastic or resin).
- the second substrate 110 material can be polyethylene terephthalate, polyethylene naphthalate two formic acid glycol ester (PEN), or polyimide.
- the second substrate 110 has a high transmittance to UV light, for example more than 60%.
- the second substrate 110 material is quartz.
- the carbon nanotube layer 120 includes a plurality of carbon nanotubes parallel to the surface of the carbon nanotube layer 120 .
- the plurality of carbon nanotubes along an extending direction joined end to end by van der Waals attraction forces.
- the carbon nanotube layer 120 is a free-standing structure.
- the term “free-standing structure” includes the carbon nanotube layer 120 that can sustain the weight of itself when it is hoisted by a portion thereof without any significant damage to its structural integrity.
- the carbon nanotube layer 120 can be suspended by two spaced supports (not shown).
- the plurality of carbon nanotubes can be single-walled carbon nanotubes, double-walled carbon nanotubes, or multi-walled carbon nanotubes. The length and diameter of the plurality of carbon nanotubes can be selected according to need.
- the diameter of the single-walled carbon nanotubes can be from about 0.5 nanometers to about 10 nanometers.
- the diameter of the double-walled carbon nanotubes can be from about 1.0 nanometer to about 15 nanometers.
- the diameter of the multi-walled carbon nanotubes can be from about 1.5 nanometers to about 50 nanometers.
- the length of the carbon nanotubes can be from about 200 micrometers to about 900 micrometers.
- the carbon nanotube layer 120 can include at least one carbon nanotube film, at least one carbon nanotube wire, or combination thereof.
- the carbon nanotube layer 120 can be pure carbon nanotube layer.
- the carbon nanotube layer 120 can include a single carbon nanotube film or two or more carbon nanotube films stacked together. Thus, the thickness of the carbon nanotube layer 120 can be controlled by the number of the stacked carbon nanotube films.
- the carbon nanotube layer 120 is formed by folding a single carbon nanotube wire.
- the carbon nanotube layer 120 can include a layer of parallel and spaced carbon nanotube wires.
- the carbon nanotube layer 120 can include a plurality of carbon nanotube wires crossed or weaved together to form a carbon nanotube net.
- the carbon nanotube net defines a plurality of holes. The plurality of holes extend throughout the carbon nanotube layer 120 along the thickness direction of the layer. It is understood that any carbon nanotube structure described can be used with all exemplary embodiments.
- the carbon nanotube layer 120 includes at least one drawn carbon nanotube film.
- a drawn carbon nanotube film can be drawn from a carbon nanotube array that is able to have a film drawn therefrom.
- the drawn carbon nanotube film includes a plurality of successive and oriented carbon nanotubes joined end-to-end by van der Waals attraction forces therebetween.
- the drawn carbon nanotube film is a free-standing film.
- Each drawn carbon nanotube film includes a plurality of successively oriented carbon nanotube segments joined end-to-end by van der Waals attraction forces therebetween.
- Each carbon nanotube segment includes a plurality of carbon nanotubes parallel to each other, and combined by van der Waals attraction forces therebetween. As can be seen in FIG.
- the carbon nanotubes in the drawn carbon nanotube film are oriented along a preferred orientation.
- the drawn carbon nanotube film can be treated with an organic solvent to increase the mechanical strength and toughness and reduce the coefficient of friction of the drawn carbon nanotube film.
- a thickness of the drawn carbon nanotube film can range from about 0.5 nanometers to about 100 micrometers.
- the drawn carbon nanotube film defines a plurality of holes between adjacent carbon nanotubes.
- the carbon nanotube layer 120 can include at least two stacked drawn carbon nanotube films.
- the carbon nanotube layer 120 can include two or more coplanar carbon nanotube films, and can include layers of coplanar carbon nanotube films.
- an angle can exist between the orientation of carbon nanotubes in adjacent films, whether stacked or adjacent. Adjacent carbon nanotube films can be combined by only the van der Waals attraction forces therebetween. As can be seen in FIG. 3 , an angle between the aligned directions of the carbon nanotubes in two adjacent carbon nanotube films can range from about 0 degrees to about 90 degrees.
- the carbon nanotube layer 120 When the angle between the aligned directions of the carbon nanotubes in adjacent stacked drawn carbon nanotube films is larger than 0 degrees, a plurality of holes is defined by the carbon nanotube layer 120 .
- the carbon nanotube layer 120 is shown with the aligned directions of the carbon nanotubes between adjacent stacked drawn carbon nanotube films at 90 degrees. Stacking the carbon nanotube films will also add to the structural integrity of the carbon nanotube layer 120 .
- the carbon nanotube wire can be untwisted or twisted. Treating the drawn carbon nanotube film with a volatile organic solvent can form the untwisted carbon nanotube wire. Specifically, the organic solvent is applied to soak the entire surface of the drawn carbon nanotube film. During soaking, adjacent parallel carbon nanotubes in the drawn carbon nanotube film will bundle together, due to the surface tension of the organic solvent as it volatilizes, and thus, the drawn carbon nanotube film will be shrunk into an untwisted carbon nanotube wire.
- the untwisted carbon nanotube wire includes a plurality of carbon nanotubes substantially oriented along a same direction (i.e., a direction along the length of the untwisted carbon nanotube wire). The carbon nanotubes are substantially parallel to the axis of the untwisted carbon nanotube wire.
- the untwisted carbon nanotube wire includes a plurality of successive carbon nanotube segments joined end to end by van der Waals attraction forces therebetween.
- Each carbon nanotube segment includes a plurality of carbon nanotubes substantially parallel to each other, and combined by van der Waals attraction forces therebetween.
- the carbon nanotube segments can vary in width, thickness, uniformity, and shape.
- the length of the untwisted carbon nanotube wire can be arbitrarily set as desired.
- a diameter of the untwisted carbon nanotube wire ranges from about 0.5 nanometers to about 100 micrometers.
- the twisted carbon nanotube wire can be formed by twisting a drawn carbon nanotube film using a mechanical force at two opposite ends of the drawn carbon nanotube film in opposite directions.
- the twisted carbon nanotube wire includes a plurality of carbon nanotubes helically oriented around an axial direction of the twisted carbon nanotube wire. More specifically, the twisted carbon nanotube wire includes a plurality of successive carbon nanotube segments joined end to end by van der Waals attraction forces therebetween. Each carbon nanotube segment includes a plurality of carbon nanotubes parallel to each other, and combined by van der Waals attraction forces therebetween.
- the length of the carbon nanotube wire can be set as desired.
- a diameter of the twisted carbon nanotube wire can be from about 0.5 nanometers to about 100 micrometers.
- the twisted carbon nanotube wire can be treated with a volatile organic solvent after being twisted to bundle the adjacent paralleled carbon nanotubes together.
- the specific surface area of the twisted carbon nanotube wire decreases while the density and strength of the twisted carbon nanotube wire increases.
- the carbon nanotube layer 120 can be located directly on the surface of the second substrate 110 . As carbon nanotube layer 120 defines a plurality of holes, a partial surface of the second substrate 110 is exposed through the plurality of holes.
- disposing the carbon nanotube layer 120 on the second substrate 110 comprises solvent treating the second substrate 110 with the carbon nanotube layer 120 thereon. Because there is an air gap 112 between the carbon nanotube layer 120 and the surface of the second substrate 110 , the solvent can exhaust air while allowing the carbon nanotube layer 120 to be closely and firmly adhered on the surface of the second substrate 110 .
- the solvent can be water or volatile organic solvent such as ethanol, methanol, acetone, dichloroethane, chloroform, or mixtures thereof. In one exemplary embodiment, the organic solvent is ethanol.
- the material of the cover layer 130 can be metal, metal oxide, metal nitride, metal carbide, metal sulfide, silicon oxide, silicon nitride, or silicon carbide.
- the metal can be gold, nickel, titanium, iron, aluminum, chromium, or alloy thereof.
- the metal oxide can be alumina, magnesium oxide, zinc oxide, or hafnium oxide.
- the material of the cover layer 130 is not limited above and can be any material as long as the material can be deposited on the carbon nanotube layer 120 and have a high transmittance to UV light, for example more than 60%.
- the cover layer 130 can be deposited on the surface of the carbon nanotube layer 120 by atomic layer deposition (ALD).
- ALD atomic layer deposition
- the method of depositing the cover layer 130 can also be physical vapor deposition (PVD), chemical vapor deposition (CVD), magnetron sputtering, or spaying.
- the method of depositing the cover layer 130 is not limited above and can be any method as long as the cover layer 130 can be continuously deposited on the carbon nanotube layer 120 surface and the structure of the carbon nanotube layer 120 is not destroyed.
- the thickness of the cover layer 130 is nm-20 nm. If the thickness of the cover layer 130 is more than 20 nm, the transmittance to UV light of the cover layer 130 would be seriously reduced.
- the material of the cover layer 130 is alumina, and the thickness of the cover layer 130 is 5 nm.
- the composite layer 140 is also free-standing and can be used alone as a lithographic pattern and the second substrate 110 is not optional.
- step S 13 when the ultraviolet light 180 irradiates on the photolithography mask plate 100 , due to the second substrate 110 and the cover layer 130 having high transmittance, the loss of the ultraviolet light 180 is negligible as the light 180 passes through the second substrate 110 and the cover layer 130 .
- the carbon nanotubes is capable of strongly absorbing the ultraviolet light, the ultraviolet light irradiated on the carbon nanotube structure is almost completely absorbed and the ultraviolet light irradiated at the holes between carbon nanotubes can pass directly through the carbon nanotube layer 120 .
- the photoresist layer 160 is exposed by irradiating the surface of the photoresist layer 160 through the photolithography mask plate 100 with the ultraviolet light 180 .
- the surface of the photoresist layer 160 corresponding to the holes between the carbon nanotubes is exposed to the ultraviolet light 180 .
- the surface of the photoresist layer 160 corresponding to the carbon nanotube structure is not exposed to the ultraviolet light 180 .
- the exposure time of the photoresist layer 160 is about 2 s-7 s. In one exemplary embodiment, the exposure time of the photoresist layer 160 is about 2 s.
- step S 14 the photoresist layer 160 physically contacts the photolithography mask plate 100 , and the bonding force between the photoresist layer 160 and the composite layer 140 is less than the bonding force between the composite layer 140 and the second substrate 110 .
- the photolithography mask plate 100 can be separated from the photoresist layer 160 by applying a force to the second substrate 110 , and the structure of the photolithography mask plate 100 would not be strongly affected.
- the photolithography mask plate 100 is separated from the surface of the photoresist layer 160 , the structure of the photolithography mask plate 100 remains intact. So the photolithography mask plate 100 can be reused as a mask, and can be used repeatedly in steps S 12 -S 13 .
- the photoresist layer 160 is subjected to a developing process by placing the photoresist layer 160 in a developer for a period of time.
- the developer is a solution containing 0.4% NaOH and 1% NaCl solution.
- the developing time of the photoresist layer 160 is about 20 s.
- the developing time can be determined by the developer composition, the concentration, and the like.
- the developer is not limited to above and can be any solution as long as the photoresist layer 160 can be developed.
- the developer can be a mixed solution of NaOH solution and NaCl solution.
- the mass content of NaOH in the mixed solution is about 0.2%-1%, and the mass content of NaCl is about 0.5%-2%.
- the patterned photoresist microstructures 170 are obtained after developing the photoresist layer 160 .
- the pattern of the patterned photoresist microstructures 170 is consistent with the pattern of the carbon nanotube layer 120 .
- the patterned photoresist microstructures 170 include a plurality of ribs 171 and a plurality of micropores 172 between adjacent ribs 171 , and the micropores 172 are holes or gaps.
- the width of the ribs 171 and the diameter of the micropores 172 are related to the diameter of the carbon nanotubes and the diameter of the holes in the carbon nanotube layer 120 .
- the size of the micropore is the diameter of the hole or width of the gap.
- the plurality of micropores 172 extend throughout the patterned photoresist microstructures 170 along the thickness direction.
- the thickness of the ribs 171 and the depths of the micropores 172 is consistent with the thickness of the photoresist layer 160 .
- the width of each ribs 171 is about 20 nm-200 nm, and the diameter of each microspore is about 20 nm-300 nm.
- microstructures 152 formed by other non-photoresist materials can be further obtained according to the patterned photoresist microstructures 170 .
- the microstructures 152 can be made by a lift-off method, etching, or a combination thereof.
- the method for making the microstructures 152 is not limit the aforementioned methods and can be any method as long as the microstructures 152 can be obtained.
- the microstructures 152 are made by the lift-off method.
- the lift-off method of making the microstructures 152 includes following steps: step 1, depositing a preformed layer 190 on a surface of the patterned photoresist microstructures 170 away from the first substrate 150 and an exposed surface of the first substrate 150 ; step 2, immersing the whole structure above in acetone, and removing the patterned photoresist microstructures 170 to obtain the microstructures 152 on the first substrate 150 .
- the preformed layer 190 material can be metal, insulating materials, or semiconductor materials.
- the metal can be gold, silver, nickel, titanium, iron, aluminum, chromium, or alloy thereof.
- the insulating materials can be silicon oxide, silicon nitride.
- the semiconductor materials can be silicon, gallium nitride, gallium arsenide.
- the material of the preformed layer 190 is not limit above and can be any material as long as the material does not react with acetone.
- the preformed layer 190 can be deposited by magnetron sputtering, vapor deposition, CVD method, or the like.
- the preformed layer 190 on the patterned photoresist microstructures 170 is not continuous so that both lateral sides of the patterned photoresist microstructures 170 are not completely covered by the preformed layer 190 .
- the acetone can be contact and react with the patterned photoresist microstructures 170 .
- the preformed layer 190 material is aluminum, and the preformed layer 190 is made by vapor deposition method.
- step 2 as both lateral sides of the patterned photoresist microstructures 170 are not completely covered by the preformed layer 190 , the acetone can react with the photoresist to remove the patterned photoresist microstructures 170 .
- portions of the preformed layer 190 that are deposited on the patterned photoresist microstructures 170 surface can also be removed.
- the other portions of the preformed layer 190 that are deposited on the first substrate 150 forms the microstructures 152 .
- the carbon nanotube layer 120 includes two crossed drawn carbon nanotube films, and the microstructures 152 is a vertical crossed strips structure.
- the width of each strip in the direction perpendicular to the extension direction is set to be l, and the size of l is about 20 nm-200 nm, the width of spacing between two adjacent strips is about 20 nm-300 nm.
- the thickness of the microstructures 152 can be determined in accordance with the thickness of the preformed layer 190 .
- the microstructures 152 can also be formed by dry etching.
- the exposed surface of the first substrate 150 is etched with the patterned photoresist microstructures 170 as a mask.
- the dry etching can be plasma etching or reactive ion etching (RIE).
- RIE reactive ion etching
- the dry etching is performed by applying plasma energy on the entire or partial surface of the first substrate 150 surface via a plasma device.
- the plasma gas can be an inert gas and/or etching gases, such as argon (Ar), helium (He), chlorine (Cl 2 ), hydrogen (H 2 ), oxygen (O 2 ), fluorocarbon (CF 4 ), ammonia (NH 3 ), or air.
- the etching gas can react with the first substrate 150 and may not react with the patterned photoresist microstructures 170 .
- the reaction rate between the etching gas and the patterned photoresist microstructures 170 is much less than the reaction rate between the etching gas and the first substrate 150 .
- the pattern of the microstructures 152 is substantially identical to the pattern of the patterned photoresist microstructures 170 .
- method of making the microstructures 152 comprises removing the patterned photoresist microstructures 170 .
- the method of removing the patterned photoresist microstructures 170 can be ultrasonic method, tearing method, oxidation method and so on.
- the patterned photoresist microstructures 170 are removed by ultrasonic method.
- an exemplary embodiment of a method of making microstructures comprises:
- the method of making microstructures is similar to the above method of making microstructures of FIG. 1 except that the photolithography mask plate 200 includes a plurality of second substrates and a plurality of composite layers 140 . Each second substrate and each composite layer 140 locating on the second substrate 110 can be treated as a photolithography mask plate unit.
- the photolithography mask plate 200 includes a plurality of photolithography mask plate units. The plurality of photolithography mask plate units are stacked, and the carbon nanotubes in the photolithography mask plate unit can be arranged in parallel in one direction, or intersected in a plurality of directions.
- the mask pattern of the photolithography mask plate 200 can be adjusted by selecting photolithography mask plate units having different arrangements of carbon nanotubes. If the mask pattern of the photolithography mask plate 200 is a network pattern, the mask pattern can be obtained by directly selecting a photolithography mask unit having intersected carbon nanotubes. Also the mask pattern can be obtained by selecting two photolithography mask units having parallel carbon nanotubes, and the two photolithography mask units are stacked and the carbon nanotubes in the two units are arranged in different directions. As can be seen in FIG. 9 , the angle ⁇ of the two units can be selected as desired. As can be seen in FIG.
- the mask pattern of the photolithography mask plate 200 includes a plurality of parallel strips and an interval distance of each adjacent strips is 1, the mask pattern can be obtained by selecting two photolithography mask units having parallel strips and the interval distance of each adjacent strips is 2l, wherein the two photolithography mask units are stacked and the strips in the two photolithography mask units are in the same direction, and the strips of the two photolithography mask units alternates in positions.
- an exemplary embodiment of a method of making microstructures comprises:
- the method of making microstructures is similar to the above method of making microstructures of FIG. 1 except that the photolithography mask plate 300 includes a second substrates 110 , a third substrate 109 , and a carbon nanotube layer 120 sandwiched between the two substrates.
- the use of the third substrate 109 is the same as that of the second substrate 110 , and the material of the third substrate 109 can be the same as that of the second substrate 110 .
- the carbon nanotube layer 120 is sandwiched between the third substrate 109 and the second substrate 110 , the third substrate 109 and the second substrate 110 can fix and grip the carbon nanotube layer 120 . Due to the carbon nanotube layer 120 is fixed, it can not move on the plane and the direction perpendicular to the plane.
- the method for making the photolithography mask plate 300 is simple, and the photolithography mask plate 300 having a fixed carbon nanotube layer is obtained without the step of depositing a cover layer.
- the carbon nanotube layer 120 is a pure carbon nanotube layer and only comprises a plurality of carbon nanotubes.
- an exemplary embodiment of a method of making microstructures comprises:
- the photolithography mask plate 400 includes a second substrates 110 , a first patterned chrome layer 122 , a carbon nanotube layer 120 , and a cover layer 130 ;
- the method of making microstructures is similar to the above method of making microstructures of FIG. 1 except that the photolithography mask plate 400 includes a second substrates 110 , a first patterned chrome layer 122 , a carbon nanotube layer 120 and a cover layer 130 .
- the pattern of the first patterned chrome layer 122 coincides with the pattern of the carbon nanotube layer 120 .
- the photolithography mask plate 400 can be used as a photolithography mask unit, and a plurality of units are used in combination. Since the absorption rate of chromium to the ultraviolet light is high, the photolithography mask plate 400 has a better effect of absorbing ultraviolet light compared to a mask with only carbon nanotubes.
- the microstructures obtained by the photolithography mask plate 400 have higher accuracy compared to a mask with only carbon nanotubes.
- the photolithography mask plate 400 above comprises: the second substrate 110 , the first patterned chrome layer 122 , the carbon nanotube layer 120 , and the cover layer 130 .
- the first patterned chrome layer 122 is located on the surface of the second substrate 110 .
- the carbon nanotube layer 120 is located on a surface of the first patterned chrome layer 122 away from the second substrate 110 .
- the pattern of the first patterned chrome layer 122 is the same with the pattern of the carbon nanotube layer 120 .
- the cover layer 130 is located on the carbon nanotube layer 120 surface away from the second substrate 110 .
- the cover layer 130 is continuously and directly attached to the carbon nanotube layer 120 surface. Because the cover layer 130 can cover the entire carbon nanotube layer 120 , the entire first patterned chrome layer 122 , and a portion of the second substrate 110 , the cover layer 130 can fix the carbon nanotube layer 120 on the second substrate 110 .
- the photolithography mask plate 400 is similar to the photolithography mask plate 100 except that the photolithography mask plate 400 includes the first patterned chrome layer 122 between the carbon nanotube layer 120 and the second substrate 110 .
- the pattern of the first patterned chrome layer 122 coincides with the pattern of the carbon nanotube layer 120 . Since the absorption rate of chromium to the ultraviolet light is high, the photolithography mask plate 400 has a better effect of absorbing ultraviolet light.
- the microstructures obtained by the photolithography mask plate 400 have higher accuracy.
- an exemplary embodiment of a method of making the photolithography mask plate 400 comprises:
- the chrome layer 121 can be deposited by electron beam evaporation, ion beam sputtering, atomic layer deposition, magnetron sputtering, vapor deposition, chemical vapor deposition, etc.
- the chrome layer 121 is continuous and deposited on the second substrate 110 .
- the thickness of the chrome layer 121 is from about 10 nm to about 50 nm. In one exemplary embodiment, the chrome layer 121 is deposited on the second substrate 110 by vapor deposition, and the thickness of the chrome layer 121 is 20 nm.
- step S 52 the method of disposing the carbon nanotube layer 120 can be the same with the method above.
- the method can make the carbon nanotube layer 120 closely and firmly adhered on the chrome layer 121 surface. Partial surfaces of the chrome layer 121 corresponding to the holes of the carbon nanotube layer 120 are exposed.
- the etching method can be same with the method of etching the first substrate 150 above.
- the etching gases can be determined by the material which is etched. And the etching gases can not react with the carbon nanotube layer 120 .
- step S 54 the method of making the cover layer 130 is the same with the method above.
- the cover layer 130 is directly attached to the surface of the carbon nanotube layer 120 to form a continuous layer structure, and cover the first patterned chrome layer 122 at the same time.
- the carbon nanotube layer 120 is fixed on the second substrate 110 by the cover layer 130 .
- an exemplary embodiment of a method of making microstructures comprises:
- the photolithography mask plate 500 includes a second substrate 110 , a first patterned chrome layer 122 , a carbon nanotube layer 120 , and a cover layer 130 ;
- the method of making microstructures is similar to the method of making microstructures of FIG. 1 except that the first patterned chrome layer 122 is located between the carbon nanotube layer 120 and the cover layer 130 .
- the pattern of the first patterned chrome layer 122 coincides with the pattern of the carbon nanotube layer 120 . Since the absorption rate of chromium and carbon nanotube to the ultraviolet light is high, the microstructures obtained by the photolithography mask plate 500 have higher accuracy.
- the photolithography mask plate 500 above comprises: the second substrate 110 , the carbon nanotube layer 120 , the first patterned chrome layer 122 , and the cover layer 130 .
- the carbon nanotube layer 120 is located on the surface of the second substrate 110 .
- the first patterned chrome layer 122 is located on the surface of the carbon nanotube layer 120 away from the second substrate 110 .
- the pattern of the first patterned chrome layer 122 is the same with the pattern of the carbon nanotube layer 120 .
- the cover layer 130 covers on the surface of the first patterned chrome layer 122 away from the second substrate 110 .
- the photolithography mask plate 500 is similar to the photolithography mask plate 400 except that the first patterned chrome layer 122 is located on the carbon nanotube layer 120 surface away from the second substrate 110 .
- the pattern of the first patterned chrome layer 122 coincides with the pattern of the carbon nanotube layer 120 .
- the microstructures obtained by the photolithography mask plate 500 have higher accuracy.
- an exemplary embodiment of a method of making the photolithography mask plate 500 comprises:
- step S 72 when the thickness of the chrome layer 121 is smaller than the thickness of the carbon nanotube layer 120 , the chrome layer 121 is a discontinuous structure.
- the chrome layer 121 is divided into the first patterned chrome layer 122 and the second patterned chrome layer 123 away from each other.
- the first patterned chrome layer 122 is located only on the surface of the carbon nanotubes.
- the second patterned chrome layer 123 is located on partial surfaces of the fourth substrate 101 , and the partial surfaces corresponds to and is exposed from the holes of the carbon nanotube layer 120 .
- step S 73 since the chrome layer 121 is a discontinuous layered structure, the carbon nanotube layer 120 can be directly detached from the fourth substrate 101 surface. After the first patterned chrome layer 122 and the carbon nanotube layer are transferred, the structure of the second patterned chrome layer 123 remains unchanged.
- the fourth substrate 101 and the second patterned chrome layer 123 can also be used as a photolithography mask.
- an exemplary embodiment of a method of making microstructures comprises:
- the photolithography mask plate 500 includes a second substrate 110 , a carbon nanotube composite structure 141 and a cover layer 130 ;
- the method of making microstructures is similar to the method of making microstructures of FIG. 1 except that the carbon nanotube composite structure 141 is located on the surface of the second substrate 110 and comprises a carbon nanotube layer 120 , and a chrome layer 121 wraps the carbon nanotube layer 120 .
- the chrome layer 121 completely covers each of carbon nanotubes in the carbon nanotube layer 120 .
- the advantages of the method of making microstructures includes the following points. Since the carbon nanotubes and chromium have the high absorption of ultraviolet light and the low transmittance to ultraviolet light, the transmittance to ultraviolet light of holes is very high, then it is easy to obtain patterned microstructures.
- the cover layer can fix the carbon nanotube layer on the second substrate to form a mask, and the mask is easy to disassemble and can be used repeatedly to cut costs. Also the mask can be produced in a large scale.
- the photolithography mask plate 600 above comprises: the second substrate 110 , the carbon nanotube composite structure 141 , and the cover layer 130 .
- the carbon nanotube composite structure 141 is located on the surface of the second substrate 110 .
- the carbon nanotube composite structure 141 comprises a carbon nanotube layer 120 and a chrome layer 121 wrapped the carbon nanotube layer 120 .
- the cover layer 130 covers the surface of the carbon nanotube composite structure 141 away from the second substrate 110 .
- the photolithography mask plate 600 is similar to the photolithography mask plate 500 except that the chrome layer 121 is wrapped only on the surface of the carbon nanotubes in the carbon nanotube layer 120 and the holes between the carbon nanotubes are not covered by the chrome layer 121 .
- the microstructures obtained by the photolithography mask plate 600 have a high precision.
- an exemplary embodiment of a method of making the photolithography mask plate 600 comprises:
- the method of making the photolithography mask plate 600 is similar to the method of making the photolithography mask plate 500 except that the chrome layer 121 wraps the entire surface of the carbon nanotubes in the carbon nanotube layer 120 .
- the ultraviolet light passes through the photolithography mask plate 600 , the ultraviolet light can pass through the chrome layer twice.
- the photolithography mask plate 600 has a higher absorption of UV light.
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US15/684,350 Active 2037-09-11 US10571798B2 (en) | 2016-12-01 | 2017-08-23 | Photolithography mask plate |
US16/734,440 Active US10942453B2 (en) | 2016-12-01 | 2020-01-06 | Method for making microstructures and photolithography mask plate |
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Also Published As
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US11947261B2 (en) | 2024-04-02 |
JP2018092144A (en) | 2018-06-14 |
CN108132582A (en) | 2018-06-08 |
US10942453B2 (en) | 2021-03-09 |
US20180157164A1 (en) | 2018-06-07 |
TW201823846A (en) | 2018-07-01 |
CN108132582B (en) | 2020-06-09 |
JP6538804B2 (en) | 2019-07-03 |
US20210132500A1 (en) | 2021-05-06 |
TWI639881B (en) | 2018-11-01 |
US20200150526A1 (en) | 2020-05-14 |
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