KR101606338B1 - Photomask for manufacturing light transmitting conductor comprising nano-structured pattern and method of manufacturing the same - Google Patents
Photomask for manufacturing light transmitting conductor comprising nano-structured pattern and method of manufacturing the same Download PDFInfo
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- KR101606338B1 KR101606338B1 KR1020140048206A KR20140048206A KR101606338B1 KR 101606338 B1 KR101606338 B1 KR 101606338B1 KR 1020140048206 A KR1020140048206 A KR 1020140048206A KR 20140048206 A KR20140048206 A KR 20140048206A KR 101606338 B1 KR101606338 B1 KR 101606338B1
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- light
- nanostructure
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- network
- shielding layer
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
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- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
A light-transmitting substrate comprising: a light-transmitting substrate; And a light-shielding layer on the substrate, wherein the light-shielding layer includes a light-shielding material that prevents light incident from the outside to the substrate from transmitting through the substrate, and the light- And the pattern is an amorphous photomask, and a method of manufacturing the same.
Description
The present invention relates to a photomask for producing a light-transmitting conductor and a method of manufacturing the same, and more particularly, to a photomask for manufacturing a light-transmitting conductor having a pattern of a nanostructure and a method of manufacturing the same.
The light-transmitting conductor is a thin conductive film which transmits light in a visible light region and has electrical conductivity. BACKGROUND ART [0002] Light-transmitting conductors have been widely used widely in various electronic apparatuses. For example, a light transmissive conductor is widely used as a transparent electrode in a flat panel display panel such as a flat panel TV or a liquid crystal display of a desktop PC, a touch panel of a tablet PC, a smart phone, an electroluminescent device, or the like.
Such a light-transmitting conductor can be produced by various methods. Conventionally, a light transmitting conductor has been produced using a metal oxide such as indium tin oxide in order to have high light transmittance and conductivity. However, such a metal oxide has a problem that the conductivity is lowered as the light transmittance is increased .
As another method, a method of dispersing a nanostructure such as a carbon nano-tube or a silver nano-wire in a solution and applying it to a substrate has been actively studied. However, this method has a problem that the individual nanostructure units forming the transparent electrode are connected to each other in a state of being in contact with each other, so that the resistance value is lowered and the conductivity is lowered. In addition, since this method requires a dispersion and application process of the nanostructure every time a light transmitting conductor is manufactured, the process is complicated and the nanostructure pattern is different for each individual light transmitting conductor, have.
Recently, attention has been focused on manufacturing a light-transmitting conductor by forming a mesh pattern on a metal by photo lithography. In such photolithography, a photomask having a pattern corresponding to a metal mesh pattern is used, and the pattern of the photomask is formed by using a laser. In this case, a krypton-ion laser or an Nd yag laser is usually used as the laser source. In this case, the wavelength of the laser is 413 nm or 532 nm. Therefore, when such a laser wavelength is used, there is a limit to precise pixel size of the pattern formed on the photomask. Further, in the case of patterning a sloping line, since the laser patterns the sloped lines by repeating vertical and horizontal lines, the line width becomes larger than the wavelength. As a result, it is difficult to form a metal mesh pattern with a high degree of precision by a conventional photomask, thereby causing a visibility problem depending on the viewing distance. Furthermore, when a metal mesh electrode having a regular pattern is formed by a conventional photomask, a moiré phenomenon due to the pattern structure appears.
Accordingly, there is a need to develop a light-transmissive conductor which is excellent in both light transmittance and conductivity, improves the visibility and can prevent the moire phenomenon, as well as a reliable manufacturing method capable of mass-producing such a light- Is emerging.
The present invention provides a photomask for manufacturing a light transmitting conductor having a pattern of a nanostructure and a method of manufacturing the same.
According to a first aspect of the present invention, there is provided a photomask comprising: a light-transmitting substrate; And a light-shielding layer on the substrate, wherein the light-shielding layer includes a light-shielding material that prevents light incident from the outside to the substrate from transmitting through the substrate, and the light- , And the pattern is amorphous.
In the invention described in claim 2, the light-shielding layer according to
In the invention described in claim 3, the light-shielding layer according to
In the invention described in claim 4, the nanostructure according to
delete
According to a sixth aspect of the present invention, the pattern according to the first aspect of the present invention includes a plurality of main bodies having a pattern corresponding to each of the nanostructures constituting the nanostructure network; A plurality of intersections where the body portions intersect each other; And an intervening portion between the main body portions.
According to a seventh aspect of the present invention, at least one closed system is formed in which the body portions and the intersections of the sixth aspect are connected to each other so as to include the interposing portion therein.
According to an eighth aspect of the present invention, at least one open system is formed in which the main bodies and the intersections of the sixth aspect are connected so that the inside and the outside are not distinguished from each other.
According to a ninth aspect of the present invention, an end portion of the main body portion is protruded from the intervening portion according to the sixth aspect.
The invention according to claim 10 is characterized in that the width w of the main body according to claim 6 falls within the range of 1 x 10 2 nm ≤ w ≤ 2.5 x 10 3 nm.
In the invention described in claim 11, when the width of the body part according to claim 6 is w and the length of the body part is d, it is characterized by being in the range of 1x10 2 ? D / w? 3x10 3 .
In the invention described in claim 12, wherein the body portion width w as set forth in claim 6, when the length of the body portion d, is characterized in that in the range of from 1x10 2 ≤ d / w ≤ 5x10 6.
According to a thirteenth aspect of the invention, the intersection according to claim 6 has the same thickness as the body part.
According to the invention set forth in claim 14, the body part according to claim 6 is formed such that light incident from the outside to the substrate is not transmitted through the substrate, and the intervening part is formed such that light incident from the outside to the substrate passes through the substrate do.
In the invention described in claim 15, the light emitting device according to claim 6 is formed such that light incident from the outside to the substrate is transmitted through the substrate, and the interposed part is formed so that light incident from the outside to the substrate can not transmit through the substrate .
According to a sixteenth aspect of the present invention, there is provided a method of manufacturing a photomask, comprising the steps of: (1) applying a light-blocking material on a light-transmitting substrate; (2) applying a photosensitive material on the light-blocking material; (3) arranging the nanostructure so as to form a network arranged so that the nanostructures cross the photosensitive material; (4) irradiating light through the nanostructure network to form a shape corresponding to the nanostructure network on the photosensitive material; And forming a light-shielding layer by forming a pattern corresponding to the nanostructure network on the light-blocking material according to the shape of the photosensitive material.
The invention according to claim 17 is characterized in that the nanostructure of step (3) according to claim 16 is one selected from the group consisting of a nanotube, a nanowire and a mixture thereof.
(18) A method of manufacturing a photomask, comprising the steps of: (1) applying a light-blocking material on a light-transmitting substrate; (2) arranging the nanostructure to form a network arranged so that the nanostructures cross the light blocking material; And (3) contacting the corrosive agent through the nanostructure network to form a pattern corresponding to the nanostructure network on the light-shielding material to form the light-shielding layer.
The invention according to claim 19 is characterized in that the nanostructure of step (2) according to claim 18 comprises nanofibers.
According to a twentieth aspect of the present invention, there is provided a method of manufacturing a photomask, comprising the steps of: (1) arranging a nanostructure on a light-transmitting substrate to form a network arranged so that the nanostructures cross each other; (2) coating a light blocking material on the substrate to cover the nanostructure network; And (3) separating the nanostructure network from the substrate to form a pattern having an opening corresponding to the nanostructure network to form the light-shielding layer.
In the invention according to claim 21, the nanostructure of step (2) according to claim 20 comprises a nanofiber.
The present invention can provide a photomask for manufacturing a light-transmitting conductor having a pattern of a nanostructure and a method of manufacturing the same.
1 is a perspective view schematically showing a photomask as Example 1. Fig.
2 is a plan view showing a pattern of the light-shielding layer in the photomask of FIG.
Fig. 3 is a view showing a part of the pattern of the light-shielding layer of Fig. 2. Fig.
4 is a cross-sectional view taken along the line IV-IV in Fig.
5 is a plan view showing a pattern of the light-shielding layer in the photomask as Example 2. Fig.
6 is a plan view showing a pattern of the light-shielding layer in the photomask as Example 3. Fig.
7 is a perspective view showing a state in which a second light shielding layer is provided on a photomask as Example 4;
8 is a plan view showing a pattern of the light-shielding layer in the photomask as Example 5. Fig.
9 is a view showing a part of the pattern of the light-shielding layer in Fig.
10 is a sectional view taken along line XX of Fig.
11A to 11H are diagrams showing a manufacturing method of a photomask as Example 6. Fig.
12A to 12D are diagrams showing a manufacturing method of a photomask as Example 7. Fig.
13A to 13C are diagrams showing a manufacturing method of a photomask as Example 8. Fig.
Specific details for carrying out the invention are described on the basis of practical examples. It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Accordingly, the invention in its broader aspects is not limited to the specific details, representative devices, And the like.
(Example 1)
In this embodiment, as illustrated in FIG. 1, the
The
The
The
The
The
A pattern corresponding to a network formed by arranging the nanostructures so as to cross each other refers to a pattern formed to correspond to such a network rather than the network itself formed by arranging the nanostructures to cross each other. This pattern has, as exemplarily shown in FIG. 2, a plurality of
The
As shown in FIG. 3, the width w 1 of the
As shown in FIGS. 2 and 3, the length d 1 of the
The relationship between the width and the length of the
On the other hand, the
The size and shape of the region of the interposer 123 can be variously formed. For example, the size and shape of the region of the interposer 123 can be substantially determined by the distance between the
The pattern of the light-
(Practical example 2)
5, the
The reliability of the connection of the light-
The light-
(Example 3)
6, the
This makes it possible to form a pattern that can secure the reliability of the light-shielding layer connection even when a nano structure having a small aspect ratio is used.
The light-
(Example 4)
7, the
Accordingly, the
The pattern of the terminal
(Example 5)
8 to 10, the light shielding layer formed on the
The
The width w 2 of the
The length d 2 of the
The relationship between the width and the length of the
(Example 6)
In this embodiment, a method of manufacturing a positive photomask using a photosensitive material is illustrated, as exemplarily shown in Figs. 11A to 11H.
In this embodiment, the
A step of forming a terminal portion shading layer (not shown) connected to the
(Example 7)
In this embodiment, a method of manufacturing a positive photomask without using a photosensitive material is shown, as exemplarily shown in Figs. 12A to 12D.
In this embodiment, the
(Example 8)
In this embodiment, as shown in Figs. 13A to 13C, a method of manufacturing a negative photomask without using a photosensitive material is shown.
In this embodiment, first, the nanostructure is arranged so as to form a
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. Is possible. Accordingly, the scope of protection of the present invention is defined by the technical idea of the appended claims.
INDUSTRIAL APPLICABILITY The present invention can be applied to a field to which a photomask for manufacturing a light-transmitting conductor and a manufacturing method thereof are applied.
100, 200, 300, 400, 500, 600, 700, 800: Photomask
110, 210, 310, 410, 510, 610, 710, 810:
120, 220, 320, 420, 840: Shading layer
121, 221, 321, 521:
122, 222, 322, 522:
123, 323:
124, 324: end
427:
430: terminal portion shielding layer
520, 620, 720, 830: Light blocking material
630: Photosensitive material
Claims (21)
And a light shielding layer on the substrate,
Wherein the light-shielding layer includes a light-shielding material that prevents light incident on the substrate from being transmitted from the outside to the substrate,
Wherein the light-shielding layer includes a pattern corresponding to a network of nanostructures formed by arranging the nanostructures so as to cross each other,
Wherein the pattern is amorphous.
Wherein the light-shielding layer has a constant thickness.
Wherein the light-shielding layer is a single unitary body.
Wherein the nanostructure is one selected from the group consisting of a nanotube, a nanowire, a nano-fiber, and a mixture thereof.
A plurality of body parts having a pattern corresponding to each of the nanostructures constituting the nanostructure network;
A plurality of intersections where the body portions intersect each other; And
And an intervening portion between the main body portions.
Wherein the body portions and the intersections form at least one enclosure that is internally connected to include the interposer.
Wherein the body portions and the intersections form at least one open system connected so that the inside and the outside are not distinguished.
And the end portion of the main body portion protrudes from the interposing portion.
And the width w of the body portion falls within a range of 1 x 10 2 nm? W? 2.5 x 10 3 nm.
And this width w of the main body, when the length of the body portion is d, the photomask in the range of from 1x10 2 ≤ d / w ≤ 3x10 3.
And this width w of the main body, when the length of the body portion is d, the photomask in the range of from 1x10 2 ≤ d / w ≤ 5x10 6.
Wherein the intersection has the same thickness as the body portion.
Wherein the main body is formed such that light incident from the outside to the substrate is not transmitted through the substrate, and the intervening portion is formed such that light incident from the outside to the substrate passes through the substrate.
Wherein the main body is formed such that light incident from the outside to the substrate is transmitted through the substrate, and the intervening portion is formed so that light incident from the outside to the substrate can not pass through the substrate.
(2) applying a photosensitive material on the light-blocking material;
(3) arranging the nanostructure so as to form a network arranged so that the nanostructures cross the photosensitive material;
(4) irradiating light through the nanostructure network to form a shape corresponding to the nanostructure network on the photosensitive material; And
(5) forming a light-shielding layer by forming a pattern corresponding to the nanostructure network on the light-blocking material according to the shape of the photosensitive material.
Wherein the nanostructure in step (3) is one selected from the group consisting of nanotubes, nanowires, and mixtures thereof.
(2) arranging the nanostructure to form a network arranged so that the nanostructures cross the light-blocking material; And
(3) contacting a corrosive agent through the nanostructure network to form a pattern corresponding to the nanostructure network on the light-blocking material to form a light-shielding layer.
Wherein the nanostructure in step (2) comprises nanofibers.
(2) coating a light blocking material on the substrate to cover the nanostructure network; And
(3) separating the nanostructure network from the substrate to form a pattern having an opening corresponding to the nanostructure network to form a light-shielding layer.
Wherein the nanostructure in step (2) comprises nanofibers.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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KR1020140048206A KR101606338B1 (en) | 2014-04-22 | 2014-04-22 | Photomask for manufacturing light transmitting conductor comprising nano-structured pattern and method of manufacturing the same |
PCT/KR2014/006136 WO2015163535A1 (en) | 2014-04-22 | 2014-07-09 | Photomask for manufacturing light-transmitting conductor having nanostructured pattern and method for manufacturing same |
JP2016559285A JP6342511B2 (en) | 2014-04-22 | 2014-07-09 | PHOTOMASK FOR MANUFACTURING LIGHT TRANSMITTING CONDUCTOR WITH NANOSTRUCTURED PATTERN AND METHOD |
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KR1020140048206A KR101606338B1 (en) | 2014-04-22 | 2014-04-22 | Photomask for manufacturing light transmitting conductor comprising nano-structured pattern and method of manufacturing the same |
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KR101606338B1 true KR101606338B1 (en) | 2016-03-24 |
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CN108132585B (en) * | 2016-12-01 | 2020-02-07 | 清华大学 | Preparation method of micro-nano structure |
CN108132582B (en) * | 2016-12-01 | 2020-06-09 | 清华大学 | Photoetching mask plate |
CN108132579B (en) * | 2016-12-01 | 2020-09-25 | 清华大学 | Photoetching mask plate |
CN108132581B (en) * | 2016-12-01 | 2020-07-10 | 清华大学 | Photoetching mask plate |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008275934A (en) * | 2007-04-27 | 2008-11-13 | Hoya Corp | Photomask blank and method for manufacturing photomask |
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---|---|---|---|---|
JPS625241A (en) * | 1985-06-29 | 1987-01-12 | Oki Electric Ind Co Ltd | Production of photomask |
JPH0619118A (en) * | 1992-07-03 | 1994-01-28 | Fujitsu Ltd | Exposing mask and pattern forming method |
JP3164208B2 (en) * | 1998-03-26 | 2001-05-08 | 日本電気株式会社 | Method of manufacturing single electronic device |
WO2001018866A1 (en) * | 1999-09-10 | 2001-03-15 | Starmega Corporation | Strongly textured atomic ridges and dots |
KR20060065305A (en) * | 2004-12-10 | 2006-06-14 | 삼성코닝 주식회사 | Photo mask and method for emi filter thereby |
CN101292362B (en) * | 2005-08-12 | 2011-06-08 | 凯博瑞奥斯技术公司 | Transparent conductors and its preparation method, lamination structure and display device |
KR100730217B1 (en) * | 2006-03-28 | 2007-06-19 | 삼성에스디아이 주식회사 | Method of manufacturing plasma display panel and photomask to be used in that method |
US8641912B2 (en) * | 2007-05-23 | 2014-02-04 | California Institute Of Technology | Method for fabricating monolithic two-dimensional nanostructures |
JP5430921B2 (en) * | 2008-05-16 | 2014-03-05 | 富士フイルム株式会社 | Conductive film and transparent heating element |
JP5397376B2 (en) * | 2008-08-11 | 2014-01-22 | コニカミノルタ株式会社 | Transparent electrode, organic electroluminescence element, and method for producing transparent electrode |
JP2012028183A (en) * | 2010-07-23 | 2012-02-09 | Fujifilm Corp | Conductive material and touch panel and display device with touch panel function |
KR101215299B1 (en) * | 2010-12-30 | 2012-12-26 | 포항공과대학교 산학협력단 | Nano imprint mold manufacturing method, light emitting diode manufacturing method and light emitting diode using the nano imprint mold manufactured by the method |
JP2012185770A (en) * | 2011-03-08 | 2012-09-27 | Sony Corp | Transparent electrode element, information input device, and electronic apparatus |
KR101586902B1 (en) * | 2014-04-09 | 2016-01-19 | 인트리 주식회사 | Light transmitting conductor comprising pattern of nanostructure and method of manufacturing the same |
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- 2014-07-09 JP JP2016559285A patent/JP6342511B2/en active Active
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JP6342511B2 (en) | 2018-06-13 |
JP2017514164A (en) | 2017-06-01 |
WO2015163535A1 (en) | 2015-10-29 |
KR20150121943A (en) | 2015-10-30 |
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