Государственное Высшее Учебное Заведение "Ужгородский Национальный Университет"
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The invention relates to the field of inorganic chemistry, in particular to the technology of growing using gas-transport reactions of halogen halcogenides monocrystals. A method for growing monocrystals of copper iodide-pentatioarsenate CuAsSI by chemical transport reactions, which includes stepped heating vacuumized quartz ampoules containing the initial components in the required stoichiometric ratio, to the maximal temperature and exposure at the same temperature for 24 hours and further growth of single crystals. The elementary sulfur and copper and binary arsenic sulfide AsSand copper iodide CuI are used as the initial components for synthesis, at that the maximum temperature of synthesis is of 923 ± 5 K, and growth is carried out using as a transporting agent, copper iodide CuI at the rate of 20 mg/smof free ampoule volume. The use of the invention allows to simplify the method of single crystals production.
UAA201004593A2010-04-192010-04-19METHOD for crystal growth of copper iodide-PENTATIOARSENATe Cu6AsS5I by chemical transport reactions
UA93332C2
(en)
method for growing single crystals from solid solutions of copper chloride-bromidepentathiophosphate Cu6PS5Cl0,5Br0,5 by means of chemical transport reactions