Институт Сверхтвердых Материалов Им. В.М. Бакуля Нан Украины
Алексей Павлович Чепугов
Сергей Алексеевич Ивахненко
Максим Александрович Цисар
Владимир Владимирович Шатохин
Евгений Александрович Пащенко
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Application filed by Институт Сверхтвердых Материалов Им. В.М. Бакуля Нан Украины, Алексей Павлович Чепугов, Сергей Алексеевич Ивахненко, Максим Александрович Цисар, Владимир Владимирович Шатохин, Евгений Александрович ПащенкоfiledCriticalИнститут Сверхтвердых Материалов Им. В.М. Бакуля Нан Украины
Priority to UAU201314054UpriorityCriticalpatent/UA89625U/en
Publication of UA89625UpublicationCriticalpatent/UA89625U/en
Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means
(AREA)
Abstract
A method for the production of probes for scanning tunneling microscopy involves manufacturing of probe point with use of diamond monocrystal grown on seed, and fixturing the probe point in the body. Diamond crystal with electrical resistance of 1010Ohm·m and boron admixture concentration no less than 10cmis used for probe point manufacturing.
UAU201314054U2013-12-032013-12-03Method for the production of probes for scanning tunneling microscopy
UA89625U
(en)