Одеський Національний Університет Імені І.І. Мечникова
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Testing Or Measuring Of Semiconductors Or The Like
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Abstract
A method for detection of p-n junction surface breakdown consists in that measurements of volt-ampere characteristic of reverse current of the p-n junction are carried out, and by that characteristic breakdown voltage is determined. The measurements are carried out two times: at first measurement the p-n junction under investigation is placed to dry air, and at second measurement it is placed to container with air and humid ammonia vapor with partial pressure from 1 to 200 Pa, this makes it possible to determine through comparison of the measured values of breakdown voltage if the breakdown takes place on the surface of the p-n junction, or in the volume of the crystal.
UAU201309328U2013-07-252013-07-25Method for detection of p-n junction surface breakdown
UA87430U
(en)
Methods of detecting high antioxidant levels during electrochemical measurements and failsafing an analyte concentration therefrom as well as devices, apparatuses and systems incorporating the same