Одеський Національний Університет Імені І.І. Мечникова
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Одеський Національний Університет Імені І.І. МечниковаfiledCriticalОдеський Національний Університет Імені І.І. Мечникова
Priority to UAU201309328UpriorityCriticalpatent/UA87430U/en
Publication of UA87430UpublicationCriticalpatent/UA87430U/en
Testing Or Measuring Of Semiconductors Or The Like
(AREA)
Abstract
A method for detection of p-n junction surface breakdown consists in that measurements of volt-ampere characteristic of reverse current of the p-n junction are carried out, and by that characteristic breakdown voltage is determined. The measurements are carried out two times: at first measurement the p-n junction under investigation is placed to dry air, and at second measurement it is placed to container with air and humid ammonia vapor with partial pressure from 1 to 200 Pa, this makes it possible to determine through comparison of the measured values of breakdown voltage if the breakdown takes place on the surface of the p-n junction, or in the volume of the crystal.
UAU201309328U2013-07-252013-07-25Method for detection of p-n junction surface breakdown
UA87430U
(en)