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Application filed by Сергей Борисович БеринговfiledCriticalСергей Борисович Берингов
Priority to UAU201200807UpriorityCriticalpatent/UA72174U/en
Publication of UA72174UpublicationCriticalpatent/UA72174U/en
A method for growth of multicrystal silicon ingots comprises the movement additional silicon raw material by means of device for charging of furnace for growth of multicrystal silicon ingots from it hopper in chambers of growth furnace on solid silicon plug forming on smelt surface.
UAU201200807U2010-05-262010-05-26Method for growth of multicrystal silicon ingots
UA72174U
(en)
Process for producing epitaxial single-crystal silicon carbide substrate and epitaxial single-crystal silicon carbide substrate obtained by the process
Polycrystalline silicon ingot casting mold and method for producing same, and silicon nitride powder for mold release material for polycrystalline silicon ingot casting mold and slurry containing same
Polycrystalline silicon ingot casting mold and method for producing same, and silicon nitride powder for mold release material for polycrystalline silicon ingot casting mold and slurry containing same