TWM654372U - Semiconductor processing equipment and induction heater thereof - Google Patents

Abstract

A semiconductor processing device and an induction heater thereof are provided, wherein the induction coil is arranged in a concentric circle structure, each turn of the circular coil has a relatively long concentric circle segment, and adjacent circular coils are connected by relatively short straight transition segments. The concentric circle structure is helpful to realize the simulation of the induction coil, saves calculation time, and can reduce the difficulty of manufacturing the induction coil, improve the manufacturing accuracy of the induction coil and process stability. Each turn of the circular coil is fixed on a supporting device, and a plurality of turn spacing fixing blocks are added between two adjacent turns of the circular coil to resist the electromagnetic force generated by each turn of the coil during the heating process, keep the coil turn spacing stable, and thus ensure the stability of the induction coil in the plane direction. The support device is fixed to the bottom plate of the reaction chamber by using the height adaptor to determine the installation height of the induction coil and keep the position of the induction coil stable during the induction heating process.

Description

Semiconductor processing equipment and induction heater thereof

This invention relates to a semiconductor processing device and an induction heater thereof.

In many semiconductor manufacturing processes, heaters are needed to meet temperature requirements. For example, in the MOCVD process, a heating device is usually used to heat the tray. The tray is usually made of materials with good thermal conductivity such as graphite or silicon carbide, which makes it easier to distribute the temperature evenly. Usually, the substrate is heated by heat conduction, radiation, etc. of the high-temperature tray. Commonly used heating devices are mainly resistance heating and induction heating. Among them, induction heating has the characteristics of high efficiency, fast heating speed, sensitive temperature regulation, low maintenance cost, and is more suitable for high temperature conditions. It has great advantages in the application of MOCVD (Metal-organic Chemical Vapor Deposition).

Due to the high requirements for temperature uniformity in the process, on the one hand, the temperature distribution of the graphite tray is very sensitive to the structure and size of the induction coil. On the other hand, due to the influence of electromagnetic force during the heating process, the induction coil is very easy to deform, affecting the temperature uniformity and process stability.

The statements here merely provide background technology related to the present invention and do not necessarily constitute prior art.

The purpose of this invention is to provide a semiconductor processing device and an induction heater thereof, which are convenient for simulating an induction coil and preventing the induction coil from deforming during the heating process, maintaining the turn pitch of the induction coil stable, and improving the control accuracy of the induction coil and the stability of the process.

In order to achieve the above-mentioned purpose, the invention provides an induction heater for semiconductor processing equipment, comprising: an induction coil, which is formed by connecting multiple turns of circular coils through a straight transition section, each turn of the circular coil includes a starting end and an end, there is a distance between the starting end and the end, and the adjacent inner turn circular coil and outer turn circular coil are connected through a straight transition section, and the two ends of the straight transition section are respectively connected to the starting end of the inner turn circular coil and the end of the outer turn circular coil; and, a plurality of supporting devices, which are fixedly connected to the bottom of each turn of the circular coil of the induction coil.

In some embodiments, the induction heater includes a turn spacing fixing block, which is disposed between two adjacent turns of the circular coil to maintain the turn spacing between the two adjacent turns of the circular coil.

Optionally, the width of the turn spacing fixed block is equal to the turn spacing between two adjacent turns of the circular coil.

Preferably, the cross-section of the turn spacing fixing block is an isosceles trapezoid, the length of the line connecting the midpoints of the two hypotenuses of the isosceles trapezoid is equal to the turn spacing between two adjacent turns of the circular coil, and the base of the isosceles trapezoid is longer than the top.

Preferably, a bolt is welded at the bottom of each round coil of the induction coil; the supporting device includes a fixing portion, which is arranged along the radial direction of the induction coil and has a screw hole thereon; wherein, after the bolt passes through the screw hole, the induction coil is fixed by a nut.

Preferably, the supporting device further includes a connecting portion, which is connected to one side of the screw hole, wherein the fixing portion is fixed to the semiconductor device through the connecting portion.

Preferably, the connecting portion and the fixing portion are integrally formed and are in an inverted L-shape.

In some embodiments, the induction heater further comprises a plurality of height adapting parts, and the height adapting parts are connected to the connecting parts of the supporting device in a one-to-one correspondence.

Preferably, a plurality of fixing pins are fixedly arranged on the connecting portion, and a plurality of first pin holes corresponding to the plurality of fixing pins are arranged on the top of the height adaptation portion.

Preferably, the bottom of the height adaptation portion has a plurality of second pin holes.

Preferably, the supporting device is made of zirconia or aluminum oxide, and the height adaptation part is made of stainless steel.

Preferably, the straight transition section extends outward from the starting end of the inner turn circular coil along the diameter of the sensing coil and connects to the terminal end of the outer turn circular coil.

Preferably, the distance between the start and end of each turn of the circular coil is 2 mm to 5 mm.

Preferably, the induction coil is a hollow structure for circulating a cooling medium.

Preferably, the number of the supporting devices is at least three.

The invention also provides a semiconductor processing device, comprising: A reaction chamber; A rotating shaft, which is arranged in the reaction chamber; A substrate tray, which is arranged on the rotating shaft and can rotate along with the rotating shaft, and the substrate tray is used to carry one or more substrates; The semiconductor processing device also includes the induction heater;

The induction heater is arranged below the substrate tray, and the rotating shaft passes through the center of each turn of the circular coil.

Preferably, the bottom plate of the reaction chamber is provided with a plurality of third pin holes, the size and position of the third pin holes match the size and position of the second pin holes, and the height adaptation portion is fixed to the bottom plate of the reaction chamber by mounting pins.

Preferably, a groove is provided on the bottom plate of the reaction chamber, the size and position of the groove match the size and position of the height adaptation part, and the bottom of the height adaptation part is embedded in the groove.

This invention sets the induction coil as a concentric circle structure. Each turn of the circular coil has a longer concentric circle segment. Adjacent circular coils are connected by a shorter straight transition segment. The concentric circle structure helps to simulate the induction coil, saves calculation time, and can reduce the difficulty of manufacturing the induction coil, improve the manufacturing accuracy and process stability of the induction coil. Each turn of the circular coil is fixed on a supporting device to resist the electromagnetic force generated by each turn of the coil during the heating process, keep the coil turn distance stable, and thus ensure the stability of the induction coil in the plane direction. A plurality of turn spacing fixing blocks are added between two adjacent turns of the circular coil to further resist the electromagnetic force generated by each turn of the coil during the heating process, prevent the induction coil from being deformed during the heating process, and maintain the turn spacing of the induction coil stable. The support device is fixed to the bottom plate of the reaction chamber using a height adapter to determine the installation height of the induction coil and maintain the position of the induction coil stable during the induction heating process.

The following specifically describes a preferred embodiment of the present invention according to Figures 1 to 6.

As shown in FIG. 1 , in an embodiment of the present invention, a semiconductor processing device is provided, which includes a reaction chamber 1, a rotating shaft 2 is arranged in the reaction chamber 1, a substrate tray 3 is arranged on the rotating shaft 2, and the substrate tray 3 can rotate along with the rotating shaft 2. The substrate tray 3 needs better thermal conductivity, so it is generally made of graphite material and plated with silicon carbide on the surface. A plurality of satellite trays 4 are arranged on the substrate tray 3, and the satellite trays 4 are used to carry substrates 5.

An induction heater is arranged below the substrate tray 3, and the rotating shaft 2 passes through the center of the induction heater. As shown in FIG. 1 to FIG. 3, the induction heater comprises an induction coil 6 and a plurality of supporting devices 7 for supporting the induction coil 6.

As shown in FIG. 2 and FIG. 3 , the induction coil 6 is formed by connecting multiple turns of circular coils 61 through a straight transition section 62, and the rotating shaft 2 passes through the center of each turn of the circular coil 61. Each turn of the circular coil 61 includes a starting end and an ending end, and the starting end and the ending end are disconnected and have a spacing therebetween. The starting end and the ending end of each turn of the circular coil 61 are spaced a certain distance apart to prevent arc breakdown between the starting end and the ending end. Preferably, the distance between the starting end and the ending end is 2 mm to 5 mm, so as to avoid arc breakdown and reduce the influence of heating on the coil. The adjacent inner-turn circular coil and outer-turn circular coil are connected via a straight transition section 62, and the two ends of the straight transition section 62 are respectively connected to the starting end of the inner-turn circular coil and the terminal end of the outer-turn circular coil. Preferably, in order to reduce the influence of the straight transition section 62 on the heating and simulation determination of coil-related parameters, such as the spacing between adjacent turns of the circular coil 61, the straight transition section 62 extends outward from the starting end of the inner-turn circular coil along the diameter of the inner-turn circular coil and is connected to the terminal end of the outer-turn circular coil, so that the length of the straight transition section 62 can be shortened, the control accuracy is improved and the simulation difficulty is reduced. As shown in FIG1 , a plurality of bolts 8 are welded to the bottom of each round coil 61 in the induction coil 6. The bolts 8 are made of copper or copper alloy and are used to be fixedly connected to the supporting device 7 to ensure that the turn spacing between the round coils 61 is stable and prevent the coils from being deformed.

The number of turns of the circular coil 61 is determined according to the size of the substrate tray 3 and the substrate 5. The turn spacing between any two adjacent turns of the circular coil 61 is not exactly the same. The turn spacing between the circular coil 61 needs to be determined based on the simulation results to achieve temperature uniformity of the substrate tray 3.

The induction coil 6 adopts a concentric circle structure, the straight transition section 62 is shorter, and the concentric circle section of the circular coil 61 is longer, which helps to achieve accurate simulation of the heating effect of the induction coil 6, improve the heating control accuracy of the induction coil, and further improve the process stability.

The material of the induction coil 6 can be oxygen-free copper. The induction coil 6 adopts a hollow structure. A circulating cooling medium, such as cooling water, is introduced through coil connectors 63 and 64 disposed at both ends of the induction coil 6 to prevent the temperature from being too high. The coil connectors 63 and 64 also supply power to the induction coil 6. The surface of the induction coil 6 is plated with gold or silver to prevent the induction coil 6 from being overheated due to the radiation of the substrate tray 3 during heating, thereby preventing the induction coil 6 from failing, leaking, or being damaged.

As shown in Figures 1 to 3, the supporting device 7 is fixedly connected to the bottom of the sensing coil 6. The number of the supporting devices 7 is at least three. The supporting device 7 is fixedly connected to the bottom of each turn of the circular coil 61 of the sensing coil 6. The supporting device 7 is made of non-conductive ceramic materials such as aluminum oxide or zirconium oxide, and has good heat resistance and high strength.

The support device 7 includes a fixing portion 71 and a connecting portion 72 connected to the fixing portion 71. The fixing portion 71 is arranged along the radial direction of the induction coil 6 and is provided with a screw hole. After the bolt 8 welded to the bottom of the circular coil 61 passes through the screw hole provided on the fixing portion 71, the bolt 8 is locked by a nut 9, thereby fixing each turn of the circular coil 61 on the support device 7 to resist the electromagnetic force generated by each turn of the coil during the heating process, keep the coil turn distance stable, and thus ensure the stability of the induction coil 6 in the plane direction. Preferably, in order to facilitate fixing the bolt 8 by the nut 9, the connecting portion 72 is connected to one side of the screw hole, and the fixing portion 71 and the connecting portion 72 are integrally formed and present an inverted L shape; in some embodiments, the fixing portion 71 and the connecting portion 72 can also be connected by welding, pins, etc.

As shown in FIG. 4 to FIG. 6 , in some embodiments of the present invention, the support device 7 further includes a plurality of turn spacing fixing blocks 73, and the turn spacing fixing blocks 73 are arranged between two adjacent turns of the circular coil 61, and the width of the turn spacing fixing blocks 73 is equal to the turn spacing between the corresponding two adjacent turns of the circular coil 61. Due to the long-term use of the coil, during the repeated heating and cooling process, a certain gap will inevitably be generated between the fixing bolt 8 and the screw hole on the support device 7, which may affect the stability of the induction heating process. A plurality of turn spacing fixing blocks 73 are added between two adjacent turns of the circular coil 61 to further resist the electromagnetic force generated by each turn of the circular coil 61 during the heating process, prevent the coil from being deformed during the heating process, and maintain the stable turn spacing of the coil. In some embodiments of the present invention, the turn spacing fixing block 73 is fixed to the fixing portion 71. Preferably, the turn spacing fixing block 73 is integrally formed with the fixing portion 71, and the cross-section of the turn spacing fixing block 73 is an isosceles trapezoid whose lower dimension is larger than the upper dimension. The length of the line connecting the midpoints of the two hypotenuses of the isosceles trapezoid is equal to the turn spacing between the two adjacent turns of the circular coil 61. The bottom side of the isosceles trapezoid is 0.2 mm to 1.5 mm longer than the top side. 2mm, preferably, the base of the isosceles trapezoid is 0.4mm longer than the top; the height of the isosceles trapezoid is equal to or slightly greater than the height of the circular coil 61, so that when the bolt 8 is locked with the nut 9, each turn of the circular coil 61 is fastened between radially adjacent turn spacing fixing blocks 73, which can ensure that the circular coil 61 can be easily embedded during installation, facilitating installation, and can also ensure stable fixation after tightening the bolt 8.

As shown in Figures 4 to 6, in some embodiments of the present invention, the induction heater further includes a plurality of height adaptation parts 10, the number of the height adaptation parts 10 is consistent with the number of the supporting devices 7, the height adaptation parts 10 are connected to the supporting devices 7 one by one, and the height adaptation parts 10 are arranged between the supporting devices 7 and the bottom plate 11 of the reaction chamber 1 to determine the installation height of the induction coil 6 and keep the position of the induction coil 6 stable during the induction heating process.

Specifically, as shown in Figure 6, the height adaptation part 10 is connected to the connecting part 72 in a one-to-one correspondence, a plurality of fixing pins 721 are fixedly arranged at the lower part of the connecting part 72, the height adaptation part 10 is made of stainless steel, and a plurality of first pin holes 101 corresponding to the plurality of fixing pins 721 are arranged at the top of the height adaptation part 10. The fixing pins 721 are inserted into the corresponding first pin holes 101, and the supporting device 7 is connected to the height adaptation part 10 together, so that the installation is convenient and quick. Preferably, a threaded hole is formed on the side wall of the first pin hole 101. After the fixing pin 721 is inserted into the corresponding first pin hole 101, a screw or a stud is driven into the threaded hole so that the screw or the stud presses against the fixing pin 721, thereby further fixing the supporting device 7 and the height adaptation portion 10.

The bottom of the height adaptation part 10 has a plurality of second pin holes 102, and the bottom plate 11 of the reaction chamber 1 has a plurality of third pin holes 111. The size and position of the third pin holes 111 match the size and position of the second pin holes 102, and the height adaptation part 10 is fixed to the bottom plate 11 of the reaction chamber 1 by means of mounting pins (not shown in the figure). The height adaptation part 10 and the bottom plate 11 are connected by pin holes, which can ensure convenient installation and accurate positioning.

Furthermore, a plurality of grooves 112 are provided on the bottom plate 11 of the reaction chamber 1, and the number of the grooves 112 is consistent with the number of the height adaptation parts 10. The third pin hole 111 is located in the groove 112, and the size and position of the groove 112 match the size and position of the height adaptation part 10. The bottom of the height adaptation part 10 is embedded in the groove 112, and the groove 112 makes the height adaptation part 10 easier to position and install.

This invention sets the induction coil as a concentric circle structure. Each turn of the circular coil has a longer concentric circle segment. Adjacent circular coils are connected by a shorter straight transition segment. The concentric circle structure helps to simulate the induction coil and improve the control progress and process stability of the induction coil. Each turn of the circular coil is fixed on the support device to resist the electromagnetic force generated by each turn of the coil during the heating process, keep the coil turn distance stable, and thus ensure the stability of the induction coil in the plane direction. Multiple turn spacing fixing blocks are added between two adjacent turns of the circular coil to further resist the electromagnetic force generated by each turn of the coil during the heating process, prevent the coil from deforming during the heating process, and keep the coil turn distance stable. The support device is fixed to the bottom plate of the reaction chamber by using the height adaptor to determine the installation height of the induction coil and keep the position of the induction coil stable during the induction heating process.

It should be noted that in the embodiments of the present invention, the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the attached drawings, and are only for the convenience of describing the embodiments, and do not indicate or imply that the devices or components referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.

In this work, unless otherwise clearly specified and limited, the terms "install", "connect", "connect", "fix" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be the internal connection of two components or the interaction relationship between two components. For those with ordinary knowledge in this field, the specific meanings of the above terms in this work can be understood according to the specific circumstances.

Although the content of this creation has been described in detail through the above preferred embodiments, it should be recognized that the above description should not be considered as a limitation of this creation. After reading the above content, a person with ordinary knowledge in this field will find it obvious that there are many modifications and substitutions to this creation. Therefore, the scope of protection of this creation should be limited by the scope of the attached patent application.

1: reaction chamber 11: bottom plate 111: third pin hole 112: groove 2: rotation axis 3: substrate tray 4: satellite dish 5: substrate 6: sensing coil 61: circular coil 62: straight transition section 63,64: coil joint 7: support device 71: fixing part 72: connection part 721: fixing pin 73: turn spacing fixing block 8: bolt 9: nut 10: height adaptation part 101: first pin hole 102: second pin hole

FIG1 is a schematic diagram of the structure of a semiconductor processing device provided in an embodiment of the present invention. FIG2 is a three-dimensional diagram of the bottom surface of the induction heater in FIG1. FIG3 is a top view of the induction heater in FIG2. FIG4 is a schematic diagram of the structure of a semiconductor processing device provided in another embodiment of the present invention. FIG5 is a three-dimensional schematic diagram of the structure of the induction coil, the support device, the height adapter and the bottom plate of the reaction chamber in FIG4. FIG6 is a schematic diagram of the installation and connection of the support device, the height adapter and the bottom plate of the reaction chamber in FIG4.

1: Reaction chamber

11: Base plate

2: Rotation axis

3: Substrate tray

4: Satellite disk

5: Substrate

6: Induction coil

72: Connection part

73: Turn spacing fixing block

10: Height adaptation part

101: First pin hole

102: Second pin hole

Claims (18)

An induction heater applied to semiconductor equipment, the induction heater comprises: an induction coil, which is formed by connecting multiple turns of circular coils through a straight transition section, each turn of the circular coil comprises a starting end and an ending end, there is a distance between the starting end and the ending end, the adjacent inner turn circular coil and outer turn circular coil are connected through the straight transition section, and the two ends of the straight transition section are respectively connected to the starting end of the inner turn circular coil and the ending end of the outer turn circular coil; and a plurality of supporting devices, which are fixedly connected to the bottom of each turn of the circular coil of the induction coil. An induction heater as described in claim 1, wherein the induction heater comprises a turn spacing fixing block, and the turn spacing fixing block is arranged between two adjacent turns of the circular coil to maintain the turn spacing between the two adjacent turns of the circular coil. An induction heater as described in claim 2, wherein the width of the turn spacing fixing block is equal to the turn spacing between two adjacent turns of the circular coil. As described in claim 2, the cross-section of the turn spacing fixing block is an isosceles trapezoid, the length of the line connecting the midpoints of the two hypotenuses of the isosceles trapezoid is equal to the turn spacing between two adjacent turns of the circular coil, and the base of the isosceles trapezoid is longer than the top. The induction heater as described in claim 1, wherein a bolt is welded to the bottom of each turn of the circular coil of the induction coil; the support device includes a fixing portion, the fixing portion is arranged along the radial direction of the induction coil, and a screw hole is arranged thereon; wherein the bolt passes through the screw hole and fixes the induction coil through a nut. The induction heater as described in claim 5, wherein the support device further includes a connecting portion, the connecting portion is connected to one side of the screw hole, and the fixing portion is fixed to the semiconductor device through the connecting portion. The induction heater as described in claim 6, wherein the connecting portion and the fixing portion are integrally formed and are in an inverted L shape. The induction heater as described in claim 5, wherein the induction heater further comprises a plurality of height adapting parts, and the plurality of height adapting parts are connected one by one with the connecting parts of the supporting device. The induction heater as described in claim 8, wherein a plurality of fixing pins are fixedly arranged on the connecting portion, and a plurality of first pin holes corresponding to the plurality of fixing pins are arranged on the top of the plurality of height adapting portions. An induction heater as described in claim 9, wherein the bottoms of the plurality of height-adapting portions have a plurality of second pin holes. An induction heater as described in claim 8, wherein the support device is made of zirconia or aluminum oxide, and the multiple height-adapting parts are made of stainless steel. An induction heater as described in claim 1, wherein the straight transition section extends outward from the starting end of the inner circular coil along the diameter of the induction coil and connects to the end of the outer circular coil. An induction heater as described in claim 12, wherein the distance between the start and end of each turn of the circular coil is 2 mm to 5 mm. An induction heater as described in claim 1, wherein the induction coil is a hollow structure for circulating a cooling medium. An induction heater as described in claim 1, wherein the number of the supporting devices is at least three. A semiconductor processing device comprises: a reaction chamber; a rotating shaft disposed in the reaction chamber; and a substrate tray disposed on the rotating shaft and capable of rotating along with the rotating shaft, wherein the substrate tray is used to carry one or more substrates; the semiconductor processing device further comprises an induction heater as described in any one of claim 1 to claim 14; wherein the induction heater is disposed below the substrate tray, and the rotating shaft passes through the center of each turn of the circular coil. The semiconductor processing equipment as described in claim 16, wherein the induction heater further comprises a plurality of height adapting parts, the bottoms of the plurality of height adapting parts have a plurality of second pin holes, the bottom plate of the reaction chamber has a plurality of third pin holes, the size and position of the plurality of third pin holes match the size and position of the second pin holes, and the height adapting parts are fixed to the bottom plate of the reaction chamber by mounting pins. The semiconductor processing equipment as described in claim 17, wherein the bottom plate of the reaction chamber has a groove, the size and position of the groove match the size and position of the height adaptation part, and the bottom of the height adaptation part is embedded in the groove.