TWM653540U - Bushing ring for pre-cleaning chamber and pre-cleaning chamber - Google Patents

Abstract

A liner ring for pre-cleaning a chamber, the liner ring is arranged around a base, the base is provided with at least one blowing hole for supplying blowing gas; the liner ring comprises: a transverse extension part, a vertical extension part and at least one supporting member, the transverse extension part is connected to the vertical extension part; the supporting member is arranged on the lower surface of the transverse extension part, the transverse extension part is spaced from the base by the at least one supporting member, so that a gap is formed between the transverse extension part and the base, and the gap forms a gas channel for the blowing gas to pass through; wherein the vertical extension part extends downward, and the lower end of the vertical extension part is lower than the lower surface of the base. The novel liner ring can prevent particle contamination and prevent airflow from overflowing.

Description

Liner for pre-cleaning chamber, pre-cleaning chamber

The invention relates to semiconductor equipment, in particular to the field of a pre-processing chamber and its liner.

In semiconductor equipment, the pre-treatment chamber is mainly used to process the oxide layer on the surface of the wafer. In the advanced chip manufacturing process, the oxide layer on the surface of the wafer is pre-treated to remove the oxide layer before thin film deposition.

At present, the edge of the pedestal in the pre-cleaning chamber is prone to deposits, and a large number of particle contaminants are easily generated during the process, thereby increasing the probability of particle contamination falling on the surface of the wafer. In addition, the heat conduction at the edge of the pedestal is uneven, which affects the heating uniformity of the wafer on the upper surface of the pedestal during the process, thereby affecting the process temperature at the edge of the wafer. In addition, the purge gas on the lower surface of the pedestal will affect the distribution of the process gas on the upper surface of the pedestal, resulting in uneven distribution of the process gas, and ultimately uneven wafer surface treatment.

To solve the above problems, the impact of particle contamination on the wafer and the impact of uneven distribution of process gases on the wafer should be reduced. The present invention proposes a liner for pre-cleaning a chamber, the liner is arranged around a base, the base is provided with at least one blowing hole for supplying blowing gas, the liner comprises: a transverse extension portion; a vertical extension portion, the transverse extension portion is connected to the vertical extension portion; at least one supporting member, the supporting member is arranged on the lower surface of the transverse extension portion, the transverse extension portion is spaced from the base by the at least one supporting member, so that a gap is formed between the transverse extension portion and the base, and the gap forms a gas channel for the blowing gas to pass through; wherein the vertical extension portion extends downward, and the lower end of the vertical extension portion is lower than the lower surface of the base.

Furthermore, the lining ring also includes a blocking ring, which is connected to the vertically extending portion and is used to prevent airflow from overflowing.

Furthermore, the shielding ring is arranged at the lower end of the vertically extending portion.

Furthermore, at least one step is provided on the lower surface of the transverse extension portion, and the step makes the gas passage a bent gas passage.

Furthermore, the supporting member is a column or a sphere embedded in the lower surface of the transverse extension portion.

Furthermore, the material of the support member is alumina, quartz or silicon nitride.

Furthermore, the number of the supporting members is not less than three and not more than nine.

Furthermore, the supporting members are evenly distributed along the circumference of the transversely extending portion.

Furthermore, the length of the vertical extension portion extending downward beyond the lower surface of the base is 3-10 cm.

Furthermore, a plurality of protrusions are disposed on the upper surface of the transverse extension portion, and the protrusions are higher than the upper surface of the base.

Furthermore, the number of the bumps is not less than three and not more than twelve.

Furthermore, the protrusions are evenly distributed along the circumference of the upper surface of the transverse extension portion.

Furthermore, the protrusion extends along the radial direction.

The present invention also proposes a pre-cleaning chamber, comprising: a chamber; a base, the base being arranged in the chamber; a liner, the liner being arranged around the base.

Beneficial effects of the present invention: 1. A channel for blowing gas is formed between the liner ring and the base provided by the present invention, and the blowing gas can reduce particulate pollutants; 2. The vertical extension portion of the liner ring provided by the present invention extends downward to prevent airflow from overflowing, thereby ensuring the uniformity of the airflow distribution of the reaction gas; 3. The shielding ring provided by the present invention can further prevent airflow from overflowing.

The following is a further detailed description of a liner for a pre-cleaning chamber and a pre-cleaning chamber proposed by the present invention in combination with drawings and specific implementation methods. The advantages and features of the present invention will become clearer according to the following description. It should be noted that the drawings are in a very simplified form and are not in exact proportions, which are only used to conveniently and clearly assist in explaining the purpose of the implementation method of the present invention. In order to make the purpose, features and advantages of the present invention more obvious and easy to understand, please refer to the drawings. It should be noted that the structures, proportions, sizes, etc. depicted in the drawings attached to this specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the limiting conditions for the implementation of the new model. Therefore, they have no substantial technical significance. Any structural modifications, changes in proportions or adjustments in size should still fall within the scope of the technical content disclosed by the new model without affecting the effects and purposes that can be achieved by the new model.

Please refer to FIG. 1 . The novel pre-cleaning chamber includes a chamber 107, a base 101, a liner 103, a plasma source 105 and a liner 200. The base 101 is disposed in the chamber 107. A heating element is disposed in the base 101 to heat the wafer and provide the temperature required for the process. The chamber 107 includes a side wall, and the inner surface of the side wall is connected to the liner 103. The top of the chamber 107 is provided with a A plasma source 105 and a process gas inlet nozzle 106 are arranged, and the process gas inlet nozzle 106 is arranged below the plasma source 105 and is connected to the plasma source 105; a lifting device 109 is arranged at the bottom of the chamber 107, and the base 101 is arranged on the top of the lifting device 109. The base 101 is used to place the wafer 102, and the lifting device 109 is used to control the lifting of the base 101. The liner 200 is arranged around the base 101 and connected to the upper surface of the base 101. An exhaust channel 108 connected to a pump is arranged on one side of the side wall for exhausting waste gas. The plasma source 105 converts the input process gas into a plasma state, and then the plasma process gas is annihilated through at least one gas distribution plate arranged at the process gas inlet nozzle 106, and the neutral particles enter the cavity 107 to form a reaction gas 104. After entering the cavity 107, the reaction gas 104 cleans the surface of the wafer 102. After cleaning, the reaction gas 104 passes through the liner 103 arranged on the side wall of the cavity 107, and then under the negative pressure of the pump, the exhaust gas is discharged to the outside of the cavity 107 through the exhaust channel 108.

The liner 103 includes an annular side wall, which includes an upper annular portion and a lower annular portion. The annular side wall has an inner surface and an outer surface, wherein the inner surface is a side facing the wafer 102, and the outer surface is opposite to the inner surface, i.e., a side facing the exhaust gas channel 108. The upper annular portion is provided with a plurality of vents, which are distributed at least one circle along the circumference of the liner 103. A first channel is provided on the outer surface of the upper annular portion of the annular side wall, and a second channel is provided on the outer surface of the lower annular portion of the annular side wall, and the first channel is connected to the second channel, and the second channel is connected to the exhaust gas channel 108, and finally the exhaust gas is discharged from the cavity 107. Specifically, the top outer surface of the upper ring portion is provided with a first annular flange along its circumference, the bottom outer surface of the lower ring portion is provided with a second annular flange along its circumference, and the outer surface between the upper ring portion and the lower ring portion is provided with a third annular flange along its circumference. The lower ring portion is provided with a wafer transfer port, through which the wafer 102 is placed from the outside of the cavity 107 to the inside of the sleeve 103 or the wafer 102 is taken out from the inside of the sleeve 103 to the outside of the cavity 107. The sleeve 103 is used to evenly distribute the reaction gas 104 on the surface of the wafer 102.

The material of the liner 103 is ceramic; the material of the base 101 is aluminum.

Please refer to Figures 2 and 3, which are a liner 200 for pre-cleaning the chamber provided by the present invention, which is used to prevent particle contamination around the wafer. Since particle contamination is generated during the process, the part where the liner 200 contacts the base 101 is more likely to accumulate particle contamination, in order to prevent the particle contamination from contaminating the surface of the wafer 102. At least one purge hole for supplying purge gas is provided inside the base 101, and the purge hole is connected to the purge gas channel 100. The at least one purge gas channel 100 is radially arranged along the base 101 (please refer to Figures 4 to 6). The purge gas enters from the lifting device 109 at the bottom of the base 101 and is discharged from the at least one purge hole.

Specifically, as shown in Figures 2 to 4, the liner 200 includes: a transverse extension portion 201 and a vertical extension portion 202, and the transverse extension portion 201 is connected to the vertical extension portion 202. Optionally, the liner 200 includes aluminum, ceramic or quartz, and the liner 200 is integrally formed. The liner 200 further includes at least one supporting member 203, and the at least one supporting member 203 is disposed on the lower surface of the transverse extension portion 201. The transverse extension portion 201 is spaced from the base 101 by the at least one supporting member 203, so that a gap is formed between the transverse extension portion 201 and the base 101, and the gap forms a gas channel 205 for the blowing gas to pass through. The gas channel 205 includes a first gas channel 206, a second gas channel 207, and a second gas channel 208. The first gas channel and the second gas channel are formed by the gap between the lateral extension part 201 and the base 101, and the second gas channel is formed by the gap between the vertical extension part 202 and the base 101. As shown in FIG3, the purge gas is guided by the liner 200 to form a purge gas G1 and a purge gas G2. The purge gas G1 mainly flows in the first gas channel, and the purge gas G2 mainly flows in the second gas channel. The purge gas can clean the particle contaminants in the gap and the vicinity of the wafer edge through the gas channel 205 to prevent the formation of contaminants in the gap and the wafer edge. During the cleaning process, the pre-cleaning chamber is divided into an upper half and a lower half with the base 101 as the boundary. The upper half is the process area, and the lower half is the non-process area. The process area has a large amount of reaction gas 104. The lower half is introduced with a second purge gas G near the lifting device 109 to prevent gas convection between the upper and lower parts, thereby affecting the gas distribution on the wafer surface. The vertical extension portion 202 extends downward, and the lower end of the vertical extension portion 202 is lower than the lower surface of the base 101. Optionally, the length of the vertical extension portion 202 extending downward beyond the lower surface of the base 101 is 3-10 cm. This design can prevent the second purge gas G in the non-process area of the lower half from flowing to the process area of the upper half, thereby affecting the gas flow distribution on the wafer surface. In addition, after the blowing gas G2 meets the second blowing gas G, the upward movement of the second blowing gas G can be better suppressed.

In order to further prevent the non-process zone airflow in the lower half from affecting the process zone, as shown in FIG5 , the liner 200 further includes: a baffle ring 204, the baffle ring 204 is connected to the vertical extension 202, and the baffle ring 204 can reduce the gap between the liner 200 and the liner 103, so as to better prevent the airflow from overflowing. Further preferably, the baffle ring 204 is arranged at the lower end of the vertical extension 202, and the baffle ring 204 is arranged at the lowest end, which has a certain flow guiding effect, and prevents the second purge gas G from entering the gap between the liner 200 and the liner 103. Of course, optionally, the blocking ring 204 is disposed at any position on the outer surface of the vertically extending portion 202. Optionally, the blocking ring 204 extends in the horizontal direction.

Furthermore, at least one step 2011 is provided on the lower surface of the transverse extension 201, and the step 2011 makes the gas channel 205 a bent gas channel, which can inhibit the reaction gas 104 from entering the gas channel. In addition, the base 101 is provided with at least one step corresponding to the step 2011; optionally, the steps are three, as shown in FIG6 , the purge hole is provided on the first step located at the bottom, the end of the transverse extension 201 is provided correspondingly on the second step located in the middle, and the wafer 102 is provided on the third step located at the top. Multiple steps can ensure thermal uniformity around the wafer 102.

Preferably, the support member 203 is a column or a sphere embedded in the lower surface of the transverse extension portion 201. Accordingly, a circumferential groove or a positioning hole for positioning the column or the sphere is provided on the base 101, and the support member 203 can be connected to the base 101 through the circumferential groove or the positioning hole, thereby ensuring the stability of the liner 200 on the base 101 during the process.

Since the process requires heating, in order to prevent the heat of the base 101 from being transferred to the liner 200 or the heat of the liner 200 from being transferred to the base 101, thereby affecting the temperature of the edge of the wafer 102, the contact between the base 101 and the liner 200 should be reduced as much as possible to reduce the heat conduction between the two. Further considering the stability of the placement of the liner 200, optionally, the number of the support members 203 is not less than three and not more than nine. Optionally, the support members 203 are evenly distributed along the circumference of the lower surface of the lateral extension portion 201. Furthermore, the material of the support member 203 can be selected from materials with high thermal resistance and high hardness, such as alumina, quartz or silicon nitride.

As shown in FIG2 , during the cleaning process, due to the influence of the airflow in the chamber 107, the wafer 102 is easily caused to radially deviate on the base 101. In order to ensure the stability of the placement of the wafer 102, a plurality of bumps 206 are provided on the upper surface of the lateral extension 201, and the bumps 206 are higher than the upper surface of the base 101. When the wafer 102 moves radially, the bumps 206 contact the side surface of the wafer 102, which can prevent the wafer 102 from radially detaching from the base 101. Preferably, the number of the bumps 206 is not less than three and not more than twelve. Preferably, the bumps 206 are evenly distributed along the circumference of the upper surface of the transverse extension portion 201, which can prevent the wafer 102 from deflecting in various radial directions. Furthermore, the bumps 206 extend radially and can play a role in guiding flow, thereby reducing the generation of turbulence.

In summary, the new type has the following beneficial effects: 1. A channel for blowing gas is formed between the liner and the base, which can reduce particulate pollutants; 2. The vertical extension of the liner extends downward to prevent airflow from overflowing, ensuring the uniformity of the airflow distribution of the reaction gas; 3. The shielding ring can further prevent airflow from overflowing.

In the description of the present invention, it should be understood that the positions or positional relationships indicated by the terms "center", "height", "thickness", "up", "down", "vertical", "horizontal", "top", "bottom", "inside", "outside", "axial", "radial", "circumferential", etc. are based on the positions or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In the description of the present invention, unless otherwise specified, the meaning of "multiple" is two or more.

In the description of the present invention, unless otherwise clearly specified and limited, the terms "installation", "connection", "connection", and "fixation" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two components or the interaction relationship between two components. For those with ordinary knowledge in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

In the present invention, unless otherwise clearly specified and limited, the first feature being "above" or "below" the second feature may include the first and second features being in direct contact, or the first and second features not being in direct contact but being in contact through another feature between them. Moreover, the first feature being "above", "above" and "above" the second feature includes the first feature being directly above and obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. The first feature being "below", "below" and "below" the second feature includes the first feature being directly below and obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

Although the content of the present invention has been described in detail through the above preferred embodiments, it should be recognized that the above description should not be considered as a limitation of the present invention. After reading the above content, various modifications and substitutions of the present invention will be obvious to those skilled in the art. Therefore, the protection scope of the present invention should be limited by the scope of the attached patent application.

100: purge gas channel 101: base 102: wafer 103: sleeve 104: reaction gas 105: plasma source 106: process gas inlet nozzle 107: chamber 108: tail gas channel 109: lifting device 200: liner 201: horizontal extension 2011: step 202: vertical extension 203: support 204: shielding ring 205: gas channel 206: bump G: second purge gas G1: purge gas G2: purge gas

Figure 1 is a schematic diagram of the structure of the novel pre-cleaning chamber; Figure 2 is a three-dimensional diagram of the novel liner; Figure 3 is a schematic diagram of the structure of the novel liner placed on the base; Figures 4 and 5 are enlarged views of the liner placed on the base in two embodiments of the novel; Figure 6 is a top view of the novel base.

100: Blowing gas channel

101: Base

102: Wafer

104: Reaction gas

109: Lifting device

201: Horizontal extension

202: Vertical extension part

203: Support parts

206: Bump

G: Second purge gas

G1: Blowing gas

G2: Blowing gas

Claims (14)

A liner ring for pre-cleaning a chamber, the liner ring (200) being arranged around a base (101), the base (101) being provided with at least one blowing hole for supplying blowing gas; the liner ring (200) comprising: a transverse extension portion (201); a vertical extension portion (202), the transverse extension portion (201) being connected to the vertical extension portion (202); At least one supporting member (203), the supporting member (203) being arranged on the lower surface of the transverse extension portion (201), the transverse extension portion (201) being spaced apart from the base (101) by the at least one supporting member (203), so that a gap is formed between the transverse extension portion (201) and the base (101), the gap forming a gas channel (205) for the blowing gas to pass through; Wherein, the vertical extension portion (202) extends downward, and the lower end portion of the vertical extension portion (202) is lower than the lower surface of the base (101). The liner ring for a pre-cleaning chamber as described in claim 1 further comprises: a blocking ring (204), wherein the blocking ring (204) is connected to the vertical extension portion (202) and is used to prevent airflow from overflowing. A liner ring for a pre-cleaning chamber as described in claim 2, wherein the blocking ring (204) is disposed at the lower end of the vertically extending portion (202). A liner for a pre-cleaning chamber as described in claim 1, wherein the lower surface of the transverse extension portion (201) is provided with at least one step portion (2011), and the step portion (2011) makes the gas channel (205) a bent gas channel. A liner for a pre-cleaning chamber as described in claim 1, wherein the support member (203) is a column or a sphere embedded in the lower surface of the transverse extension portion (201). A liner for a pre-cleaning chamber as described in claim 1, wherein the material of the support member (203) is alumina, quartz or silicon nitride. A liner for a pre-cleaning chamber as described in claim 1, wherein the number of the support members (203) is not less than three and not more than nine. A liner for a pre-cleaning chamber as described in claim 1, wherein the support members (203) are evenly distributed along the circumference of the transverse extension portion (201). A liner for a pre-cleaning chamber as described in claim 1, wherein the length of the vertical extension portion (202) extending downward beyond the lower surface of the base (101) is 3 to 10 cm. A liner for a pre-cleaning chamber as described in claim 1, wherein a plurality of protrusions (206) are provided on the upper surface of the transverse extension portion (201), and the protrusions (206) are higher than the upper surface of the base (101). A liner for a pre-cleaning chamber as described in claim 10, wherein the number of the protrusions (206) is not less than three and not more than twelve. A liner for a pre-cleaning chamber as described in claim 10, wherein the protrusions (206) are evenly distributed along the circumference of the upper surface of the transverse extension portion (201). A liner for a pre-cleaning chamber as described in claim 10, wherein the protrusion (206) extends radially. A pre-cleaning chamber comprises: a chamber (107); a base (101), the base (101) being disposed in the chamber (107); and a liner (200), the liner (200) being disposed around the base (101), the liner (200) being the liner described in any one of claims 1 to 13.