TWM647657U - System for wafer wet processing and cleaning - Google Patents

System for wafer wet processing and cleaning Download PDF

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Publication number
TWM647657U
TWM647657U TW112208494U TW112208494U TWM647657U TW M647657 U TWM647657 U TW M647657U TW 112208494 U TW112208494 U TW 112208494U TW 112208494 U TW112208494 U TW 112208494U TW M647657 U TWM647657 U TW M647657U
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Taiwan
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wafer
wet processing
cassette
carrying
flipping
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TW112208494U
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Chinese (zh)
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黄立佐
吳進原
張修凱
許明哲
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弘塑科技股份有限公司
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Publication of TWM647657U publication Critical patent/TWM647657U/en

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Abstract

A system for wafer wet processing and cleaning includes a first turning device, a transfer device, a plurality of wet processing tanks, a second turning device, a moisturizing device, and at least one single wafer processing device. The first turning device is configured to turn a wafer cassette by 90 degrees along a first direction. The transfer device is configured to receive and move the wafer transfer. A plurality of process liquids are respectively arranged in the plurality of wet processing tanks. The transfer device can selectively move the wafer cassette to the second turning device. The moisturizing device is configured to provide a moisturizing liquid to the second turning device. The wafer in the wafer cassette after turned by the second turning device is placed on the single wafer processing device.

Description

晶圓濕式處理與清洗系統Wafer wet processing and cleaning system

本創作是有關於一種晶圓濕式處理與清洗系統及方法。This invention relates to a wafer wet processing and cleaning system and method.

在目前三維積體電路(three-dimensional integrated circuit, 3D-IC)封裝技術領域中,晶圓表面上具有堆疊的晶片 (Chip on Wafer),因而形成有複雜結構之晶圓表面。In the current field of three-dimensional integrated circuit (3D-IC) packaging technology, there are stacked chips (Chip on Wafer) on the wafer surface, thus forming a wafer surface with a complex structure.

雖然使用習知濕式工作台(Wet Bench)的多槽體對一般晶圓進行蝕刻清洗製程時,可以成功達到高產能之蝕刻清洗目的。但是,在對具有特殊複雜結構晶圓的表面清洗時,例如對上述3D-IC晶圓40清洗時,會如圖1所示,容易在表面結構41之間留下殘留物 42。殘留物 42可能是未洗淨的晶圓微粒或是未乾燥的清潔液體等。Although the multi-tank body of the conventional wet bench is used to perform the etching and cleaning process on general wafers, the purpose of etching and cleaning with high productivity can be successfully achieved. However, when cleaning the surface of a wafer with a special complex structure, such as the above-mentioned 3D-IC wafer 40, as shown in Figure 1, residues 42 are easily left between the surface structures 41. Residue 42 may be uncleaned wafer particles or undried cleaning liquid, etc.

3D-IC晶圓40蝕刻清洗時,會經歷多道製程。而在最終去離子水清洗(DI Rinse)與乾燥(Dry)製程時,使用快速降液浸洗(Quick Dump Rinse, QDR)槽體批次具有清洗複雜結構之晶圓,以及使用異丙醇(isopropanol, IPA)槽體批次乾燥具有清洗複雜結構之晶圓,可能依舊無法達到有效清洗與乾燥該些晶圓之需求。例如,產生去離子水可能無法完全清洗去除晶圓微粒,或是晶圓未乾燥導致水痕殘留等情況。When etching and cleaning the 3D-IC wafer 40, it will go through multiple processes. In the final deionized water cleaning (DI Rinse) and drying (Dry) process, a Quick Dump Rinse (QDR) tank is used to clean wafers with complex structures in batches, and isopropyl alcohol ( isopropanol, IPA) tank batch drying of wafers with complex cleaning structures may still not meet the requirements for effective cleaning and drying of these wafers. For example, the generation of deionized water may not completely remove wafer particles, or the wafer may not be dried, resulting in residual water marks.

在這種情況之下,僅以習知設備進行清洗將會無法達成清潔度的要求。因此,需要一種晶圓濕式處理與清洗系統及方法以解決上述習知問題。In this case, simply cleaning with conventional equipment will not be able to meet the cleanliness requirements. Therefore, there is a need for a wafer wet processing and cleaning system and method to solve the above-mentioned conventional problems.

基於上述目的,本創作係提供一種晶圓濕式處理與清洗系統,包含第一翻轉裝置、傳送裝置、複數個濕處理槽、第二翻轉裝置、保濕裝置以及至少一單晶圓處理裝置。第一翻轉裝置可用以將載晶卡匣沿第一方向翻轉90度。傳送裝置可用以接收並移動載晶卡匣。複數個製程液體可分別被設置於複數個濕處理槽中,傳送裝置將載晶卡匣所承載之至少一晶圓依序浸泡於複數個濕處理槽中。傳送裝置可選擇性地將載晶卡匣移動至第二翻轉裝置,第二翻轉裝置沿與第一方向相反之第二方向將載晶卡匣翻轉90度。保濕裝置可設置於第二翻轉裝置上,用以對第二翻轉裝置提供一保濕液體。第二翻轉裝置翻轉後之載晶卡匣中之晶圓放置在單晶圓處理裝置。Based on the above objectives, the present invention provides a wafer wet processing and cleaning system, which includes a first turning device, a transmission device, a plurality of wet processing tanks, a second turning device, a moisturizing device and at least one single wafer processing device. The first flipping device can be used to flip the crystal-carrying cassette 90 degrees along the first direction. The transfer device can be used to receive and move the crystal-carrying cassette. A plurality of process liquids can be respectively placed in a plurality of wet processing tanks, and the transfer device immerses at least one wafer carried by the wafer-carrying cassette into the plurality of wet processing tanks in sequence. The transfer device can selectively move the crystal-carrying cassette to the second flipping device, and the second flipping device flips the crystal-carrying cassette 90 degrees in a second direction opposite to the first direction. The moisturizing device can be disposed on the second flipping device to provide a moisturizing liquid to the second flipping device. The wafer in the wafer loading cassette flipped by the second flipping device is placed in the single wafer processing device.

較佳地,傳送裝置包含承載機構、平移機構以及升降機構。承載機構用以接收並承載載晶卡匣。平移機構與承載機構相連接,且用以驅動該承載機構於一水平方向移動。升降機構與平移機構相連接,且用以驅動該承載機構於一垂直方向移動。Preferably, the transmission device includes a carrying mechanism, a translation mechanism and a lifting mechanism. The carrying mechanism is used to receive and carry the crystal-carrying cassette. The translation mechanism is connected with the carrying mechanism and used to drive the carrying mechanism to move in a horizontal direction. The lifting mechanism is connected to the translation mechanism and used to drive the carrying mechanism to move in a vertical direction.

較佳地,本發明之晶圓濕式處理與清洗系統更包含第一水平傳送裝置,第一水平傳送裝置自晶圓濕式處理及清洗系統之晶圓出入貨區拿取呈水平狀態之晶圓至載晶卡匣。Preferably, the wafer wet processing and cleaning system of the present invention further includes a first horizontal transfer device. The first horizontal transfer device takes the wafers in a horizontal state from the wafer loading and unloading area of the wafer wet processing and cleaning system. Round crystal-carrying cassette.

較佳地,本發明之晶圓濕式處理與清洗系統更包含第二水平傳送裝置,在第二翻轉裝置沿第二方向將載晶卡匣翻轉90度後,第二水平傳送裝置自晶圓出入貨區拿取呈水平狀態之該晶圓至單晶圓處理裝置。Preferably, the wafer wet processing and cleaning system of the present invention further includes a second horizontal transfer device. After the second flip device flips the wafer-carrying cassette 90 degrees in the second direction, the second horizontal transfer device transfers the wafer from the wafer Take the wafer in a horizontal state from the loading and unloading area to the single wafer processing device.

較佳地,單晶圓處理裝置包含旋轉台以及液體供應裝置。旋轉台可用於放置晶圓。液體供應裝置,設置在旋轉台上方,用於對晶圓施加至少一處理液體。Preferably, the single wafer processing device includes a rotating stage and a liquid supply device. A rotating stage can be used to place the wafer. A liquid supply device is disposed above the rotating table and is used for applying at least one processing liquid to the wafer.

較佳地,該處理液體包含去離子水或蝕刻液。Preferably, the treatment liquid contains deionized water or etching liquid.

較佳地,複數個製程液體包含蝕刻液、乾燥劑、去離子水中的一種或多種。Preferably, the plurality of process liquids include one or more of etching liquid, desiccant, and deionized water.

較佳地,不同的各複數個製程液體分別被設置於不同的各複數個濕處理槽中。Preferably, different process liquids are respectively disposed in different wet processing tanks.

較佳地,本發明之晶圓濕式處理與清洗系統更包含至少一乾燥槽,載晶卡匣可選擇性地由傳送裝置傳送至乾燥槽。Preferably, the wafer wet processing and cleaning system of the present invention further includes at least one drying tank, and the wafer-carrying cassette can be selectively transported to the drying tank by a conveying device.

基於上述目的,本創作再提供一種晶圓濕式處理與清洗方法,其包含下列步驟:Based on the above purpose, this invention provides a wafer wet processing and cleaning method, which includes the following steps:

拿取至少一晶圓至設置於第一翻轉裝置之載晶卡匣;Take at least one wafer to the wafer loading cassette provided on the first flipping device;

以第一翻轉裝置將載晶卡匣沿第一方向翻轉90度;Use the first flipping device to flip the crystal-carrying cassette 90 degrees along the first direction;

以傳送裝置接收並移動載晶卡匣至複數個濕處理槽上方,複數個製程液體分別被設置於複數個濕處理槽中;A transfer device is used to receive and move the crystal-carrying cassette to a plurality of wet processing tanks, and a plurality of process liquids are respectively arranged in the plurality of wet processing tanks;

以傳送裝置將載晶卡匣所承載之晶圓依序浸泡於該複數個濕處理槽中;A transfer device is used to immerse the wafers carried in the wafer-carrying cassette into the plurality of wet processing tanks in sequence;

利用傳送裝置可選擇性地將載晶卡匣移動至第二翻轉裝置;The transfer device can be used to selectively move the crystal-carrying cassette to the second turning device;

以第二翻轉裝置沿與第一方向相反之第二方向將載晶卡匣翻轉90度。The second flipping device is used to flip the crystal-carrying cassette 90 degrees in a second direction opposite to the first direction.

利用設置於該第二翻轉裝置上之保濕裝置對該第二翻轉裝置提供一保濕液體,該晶圓保持濕潤狀態;以及Utilize a moisturizing device provided on the second flipping device to provide a moisturizing liquid to the second flipping device, so that the wafer remains in a moist state; and

將由第二翻轉裝置翻轉後之載晶卡匣中之晶圓放置在單晶圓處理裝置。The wafer in the wafer loading cassette flipped by the second flipping device is placed in the single wafer processing device.

較佳地,本發明之晶圓濕式處理與清洗方法更包含:以單晶圓處理裝置之液體供應裝置對晶圓施加至少一處理液體;以及以單晶圓處理裝置之旋轉台旋轉該晶圓。Preferably, the wafer wet processing and cleaning method of the present invention further includes: applying at least one processing liquid to the wafer with a liquid supply device of a single wafer processing device; and rotating the wafer with a rotating table of the single wafer processing device. round.

較佳地,本發明之晶圓濕式處理與清洗方法更包含:提供至少一乾燥槽;以及以傳送裝置傳送載晶卡匣至乾燥槽或第二翻轉裝置。Preferably, the wafer wet processing and cleaning method of the present invention further includes: providing at least one drying tank; and using a conveying device to transport the wafer-carrying cassette to the drying tank or the second flipping device.

本創作提供了晶圓濕式處理與清洗系統及方法,可以防止去離子水未能完全清洗去除晶圓微粒,或是晶圓未乾燥導致水痕殘留等情況。在本創作中,濕式工作台(Wet Bench)設備、單晶圓處理裝置、載晶卡匣翻轉裝置相互整合。因此,當晶圓在經歷批次浸泡蝕刻或清洗槽體製程後,能利用單晶圓處理裝置之優勢,進行後續處理,例如以去離子水噴灑清洗晶圓表面、高速旋轉乾燥晶圓等。因此,上述使用QDR槽體清洗與使用IPA槽體乾燥無法達到有效清洗與乾燥複雜結構晶圓之問題得以解決。This creation provides a wafer wet processing and cleaning system and method, which can prevent the deionized water from failing to completely clean and remove wafer particles, or the wafer being not dried, resulting in water marks remaining. In this creation, the wet bench equipment, single wafer processing device, and wafer loading cassette flipping device are integrated with each other. Therefore, after the wafers undergo batch immersion etching or tank cleaning processes, the advantages of the single-wafer processing device can be used for subsequent processing, such as spraying deionized water to clean the wafer surface, high-speed rotation and drying of the wafers, etc. Therefore, the above-mentioned problem that the use of QDR tank cleaning and the use of IPA tank drying cannot effectively clean and dry complex structure wafers is solved.

為利貴審查員瞭解本創作之技術特徵、內容與優點及其所能達成之功效,茲將本創作配合附圖,並以實施例之表達形式詳細說明如下,而其中所使用之圖式,其主旨僅為示意及輔助說明之用,未必為本創作實施後之真實比例與精準配置,故不應就所附之圖式的比例與配置關係解讀、侷限本創作於實際實施上的權利範圍,合先敘明。In order to help the examiner understand the technical characteristics, content and advantages of this invention and the effects it can achieve, this invention is described in detail below with the accompanying drawings in the form of expressions of embodiments, and the diagrams used therein are as follows. The subject matter is only for illustration and auxiliary explanation, and may not represent the true proportions and precise configuration of this creation after its implementation. Therefore, the proportion and configuration relationship of the attached drawings should not be interpreted to limit the scope of rights in the actual implementation of this creation. Let’s explain first.

以下將參照相關圖式,說明依本創作之實施例,為使便於理解,下述實施例中之相同元件係以相同之符號標示來說明。The following will describe embodiments of the present invention with reference to relevant drawings. To facilitate understanding, the same components in the following embodiments are labeled with the same symbols.

如圖2及圖3所示,晶圓濕式處理與清洗系統10可包含第一翻轉裝置101、傳送裝置102、複數個濕處理槽103、第二翻轉裝置104、至少一單晶圓處理裝置106、第一水平傳送裝置107以及晶圓出入貨區109。As shown in FIGS. 2 and 3 , the wafer wet processing and cleaning system 10 may include a first flipping device 101 , a conveying device 102 , a plurality of wet processing tanks 103 , a second flipping device 104 , and at least one single wafer processing device. 106. The first horizontal transfer device 107 and the wafer loading and unloading area 109.

進一步說明,在本揭示中,在一實施例中,第一水平傳送裝置107可先由晶圓出入貨區(Load/Unload Port)109自前開式晶圓傳送盒(Front Opening Unified Pod, FOUP)中拿取晶圓30並傳送到第一翻轉裝置101。當晶圓30被放置到第一翻轉裝置101後,如圖4A及圖4B所示,第一翻轉裝置101會將載晶卡匣20翻轉,以將晶圓30由水平方向轉為垂直方向。To further explain, in the present disclosure, in one embodiment, the first horizontal transfer device 107 can first move from the wafer loading/unloading area (Load/Unload Port) 109 to the front opening wafer transfer box (Front Opening Unified Pod, FOUP). The wafer 30 is picked up and transferred to the first flipping device 101 . After the wafer 30 is placed in the first flipping device 101, as shown in FIG. 4A and FIG. 4B, the first flipping device 101 will flip the wafer loading cassette 20 to turn the wafer 30 from a horizontal direction to a vertical direction.

此時,如圖5至圖6所示,傳送裝置102會將裝有晶圓30之載晶卡匣20拿取,傳送載晶卡匣20至濕處理槽103,並將晶圓30浸入濕處理槽103中。而後,依據製程之設定,例如載晶卡匣浸入具有不同製程液體的濕處理槽103之順序、時間等,以進行晶圓30的批次浸泡蝕刻、清洗等連續製程。At this time, as shown in FIGS. 5 and 6 , the transfer device 102 will take out the wafer cassette 20 containing the wafer 30 , transfer the wafer cassette 20 to the wet processing tank 103 , and immerse the wafer 30 in the wet process. in the processing tank 103. Then, according to the process settings, such as the sequence and time of immersing the wafer cassette in the wet processing tank 103 with different process liquids, continuous processes such as batch immersion etching and cleaning of the wafer 30 are performed.

進一步說明,如圖3所示,第一水平傳送裝置107可包含第一伸縮臂1071及第一承接部1072。第一承接部1072具有可吸引或夾取晶圓30的元件,例如夾爪、吸盤、抽氣孔等,以夾取或吸引晶圓30。在一實施例中,第一水平傳送裝置107自晶圓30濕式處理及清洗系統10之晶圓出入貨區109拿取呈水平狀態之該晶圓30至載晶卡匣20。To further explain, as shown in FIG. 3 , the first horizontal conveying device 107 may include a first telescopic arm 1071 and a first receiving portion 1072 . The first receiving part 1072 has elements that can attract or clamp the wafer 30 , such as clamping claws, suction cups, air extraction holes, etc., to clamp or attract the wafer 30 . In one embodiment, the first horizontal transfer device 107 takes the wafer 30 in a horizontal state from the wafer loading and unloading area 109 of the wafer 30 wet processing and cleaning system 10 to the wafer loading cassette 20 .

在一實施例中,如圖4A及圖4B所示,在一實施例中,第一翻轉裝置101可包含基座1011、支撐架1012、翻轉架1013、翻轉動力單元1014、限位構件1015、限位動力單元1016以及驅動元件1017,第一翻轉裝置101可用以將載晶卡匣20沿第一方向(例如順時針方向)翻轉90度。In an embodiment, as shown in FIG. 4A and FIG. 4B , in an embodiment, the first flip device 101 may include a base 1011, a support frame 1012, a flip frame 1013, a flip power unit 1014, and a limiting member 1015. The limiting power unit 1016 and the driving element 1017, and the first flipping device 101 can be used to flip the crystal-carrying cassette 20 90 degrees in the first direction (eg, clockwise direction).

在一較佳實施例中,翻轉架1013以可旋轉方式設置在二支撐架1012上,翻轉動力單元1014設置在其中一支撐架1012上,並連接翻轉架1013,且用於旋轉翻轉架1013以使翻轉架1013呈垂直狀態或水平狀態。翻轉動力單元1014可為馬達,例如步進馬達、伺服馬達等。在該馬達上具有一可旋轉的轉軸,轉軸與翻轉架1013固定以帶動翻轉架1013轉動。In a preferred embodiment, the flipping frame 1013 is rotatably disposed on two supporting frames 1012, and the flipping power unit 1014 is disposed on one of the supporting frames 1012 and is connected to the flipping frame 1013 and used to rotate the flipping frame 1013. Make the flip frame 1013 vertical or horizontal. The flip power unit 1014 may be a motor, such as a stepper motor, a servo motor, etc. The motor has a rotatable rotating shaft, which is fixed to the flipping frame 1013 to drive the flipping frame 1013 to rotate.

另外,限位構件1015可分別樞設在載晶卡匣20的二相對側上,且用於樞轉到限位位置或釋放位置。限位構件1015可在限位位置時靠向載晶卡匣20的中心,其中當限位構件1015樞轉到限位位置時,二限位構件1015之間的距離將會小於載晶卡匣20的寬度。而當二限位構件1015樞轉到釋放位置時,二限位構件1015之間的距離會等於或大於載晶卡匣20的寬度。其中,此寬度通常是指的是載晶卡匣20的最寬處寬度。In addition, the limiting members 1015 can be respectively pivoted on two opposite sides of the crystal-carrying cassette 20 and used to pivot to the limiting position or the release position. The limiting member 1015 can be close to the center of the crystal-carrying cassette 20 in the limiting position. When the limiting member 1015 pivots to the limiting position, the distance between the two limiting members 1015 will be smaller than the crystal-carrying cassette 20 . 20 width. When the two limiting members 1015 pivot to the release position, the distance between the two limiting members 1015 will be equal to or greater than the width of the crystal-carrying cassette 20 . The width usually refers to the width of the widest part of the crystal-carrying cassette 20 .

進一步說明,在一較佳實施例中,如圖4A及圖4B所示,各限位構件1015可包含限位橫桿,而晶圓30可被放置於載晶卡匣20的載晶匣槽201中。限位橫桿的長度可等於或大於所有載晶匣槽201沿並排方向的總長度,藉此確保限位橫桿能夠同時抵靠載晶卡匣20中的所有晶圓30的邊緣,以固定晶圓30的位置。To further explain, in a preferred embodiment, as shown in FIGS. 4A and 4B , each limiting member 1015 may include a limiting crossbar, and the wafer 30 may be placed in the wafer cassette slot of the wafer cassette 20 201 in. The length of the limiting crossbar can be equal to or greater than the total length of all the wafers 30 in the cassette slots 201 along the side-by-side direction, thereby ensuring that the limiting crossbar can simultaneously abut the edges of all wafers 30 in the wafer cassette 20 to secure them. The position of wafer 30.

進一步說明,驅動元件1017可連接至限位動力單元1016上,以受限位動力單元1016之驅動而使對應的限位構件1015自限位位置樞轉到釋放位置,或用於受限位動力單元1016之驅動而使對應的限位構件1015自釋放位置樞轉至限位位置。To further explain, the driving element 1017 can be connected to the limiting power unit 1016 so as to be driven by the limiting power unit 1016 to pivot the corresponding limiting member 1015 from the limiting position to the release position, or used for limiting power. The driving of the unit 1016 causes the corresponding limiting member 1015 to pivot from the release position to the limiting position.

在一實施例中,傳送裝置102可包含承載機構1021、平移機構1022以及升降機構1023,且用以接收並承載載晶卡匣20。進一步說明,平移機構1022,與承載機構1021相連接,用以驅動承載機構1021於水平方向移動,升降機構1023與平移機構1022相連接,用以驅動承載機構1021於一垂直方向移動用以接收並移動載晶卡匣20。In one embodiment, the transfer device 102 may include a carrying mechanism 1021, a translation mechanism 1022, and a lifting mechanism 1023, and is used to receive and carry the wafer-carrying cassette 20. To further explain, the translation mechanism 1022 is connected to the carrying mechanism 1021 to drive the carrying mechanism 1021 to move in the horizontal direction, and the lifting mechanism 1023 is connected to the translation mechanism 1022 to drive the carrying mechanism 1021 to move in a vertical direction to receive and receive the Move the crystal-carrying cassette 20.

如圖5至圖6所示,承載機構1021可由平移機構1022以及升降機構1023驅動至接收位置以準備接收已由第一翻轉裝置101翻轉之載晶卡匣20。此時,載晶卡匣20中的晶圓30是呈垂直狀態,使得載晶卡匣20中的各晶圓30能夠在濕處理槽103由製程溶液均勻地浸泡。As shown in FIGS. 5 and 6 , the carrying mechanism 1021 can be driven to the receiving position by the translation mechanism 1022 and the lifting mechanism 1023 to prepare to receive the crystal-carrying cassette 20 that has been flipped by the first flipping device 101 . At this time, the wafers 30 in the wafer loading cassette 20 are in a vertical state, so that each wafer 30 in the wafer loading cassette 20 can be evenly soaked by the process solution in the wet processing tank 103 .

在一實施例中,平移機構1022及升降機構1023可包含步進馬達、伺服馬達、齒輪、線性滑軌、氣壓缸、油壓缸中的一種或多種;另外,承載機構1021可包含掛勾、吸盤、磁吸裝置、卡榫等接合元件中的一種或多種,以使得承載機構1021可自第一翻轉裝置101中取出載晶卡匣20,並進行後續製程。In one embodiment, the translation mechanism 1022 and the lifting mechanism 1023 may include one or more of stepper motors, servo motors, gears, linear slide rails, pneumatic cylinders, and hydraulic cylinders; in addition, the carrying mechanism 1021 may include hooks, One or more of the joining elements such as a suction cup, a magnetic device, a tenon, etc., so that the carrying mechanism 1021 can take out the crystal-carrying cassette 20 from the first flipping device 101 and perform subsequent processes.

進一步說明,複數個製程液體分別被設置於複數個濕處理槽103中,而傳送裝置102將載晶卡匣20所承載之至少一晶圓30,例如一片至二十五片之任一數量之晶圓30,依序浸泡於複數個濕處理槽103中。在一實施例中,複數個製程液體可包含蝕刻液、乾燥劑、去離子水中的一種或多種,而濕處理槽103的數量可依據需求進行設置。To further explain, a plurality of process liquids are respectively disposed in a plurality of wet processing tanks 103, and the transfer device 102 carries at least one wafer 30 carried by the wafer cassette 20, for example, any number from one to twenty-five wafers. The wafer 30 is sequentially immersed in a plurality of wet processing tanks 103 . In one embodiment, the plurality of process liquids may include one or more of etching liquid, desiccant, and deionized water, and the number of wet processing tanks 103 may be set according to requirements.

在一實施例中,蝕刻液、去離子水、乾燥劑等不同的各製程液體可分別設置於不同的濕處理槽103中,例如蝕刻液設置於第一濕處理槽103,去離子水設置於第二濕處理槽103,乾燥劑設置於第三濕處理槽103,晶圓30可依序浸泡於第一至第三濕處理槽103。In one embodiment, different process liquids such as etching liquid, deionized water, and desiccant can be respectively disposed in different wet processing tanks 103. For example, the etching liquid is disposed in the first wet processing tank 103, and the deionized water is disposed in the first wet processing tank 103. In the second wet processing tank 103, the desiccant is provided in the third wet processing tank 103, and the wafer 30 can be immersed in the first to third wet processing tanks 103 in sequence.

進一步說明,蝕刻液可為硫酸溶液、鹽酸溶液、氫氟酸溶液、氨水溶液、氫氧化氨溶液、二氧化矽蝕刻液或其他清洗化學藥劑,若是有選用兩種以上的蝕刻液,也可不限於僅使用上述三個濕處理槽103,例如可能會有盛裝不同蝕刻液的兩個濕處理槽103以及分別盛裝去離子水及乾燥劑的濕處理槽103。另外,乾燥劑可為異丙醇(isopropanol, IPA),但不以此為限。It is further explained that the etching solution can be a sulfuric acid solution, a hydrochloric acid solution, a hydrofluoric acid solution, an ammonia solution, an ammonia hydroxide solution, a silicon dioxide etching solution or other cleaning chemicals. If two or more etching solutions are selected, the etching solution is not limited to Only the above three wet processing tanks 103 are used. For example, there may be two wet processing tanks 103 containing different etching liquids and one wet processing tank 103 containing deionized water and desiccant respectively. In addition, the desiccant can be isopropanol (IPA), but is not limited to this.

除此之外,在一實施例中,晶圓濕式處理與清洗系統10可更包含乾燥槽110。因此,對於某些適用浸泡於乾燥劑的晶圓30,亦可以在浸泡過去離子水後以乾燥槽110進行乾燥。乾燥槽110可以加熱、施加乾空氣等各種乾式方式對晶圓30批次乾燥。因此,在此實施例中,可依晶圓30的種類,將載晶卡匣20可選擇性地由傳送裝置102傳送至乾燥槽110。In addition, in one embodiment, the wafer wet processing and cleaning system 10 may further include a drying tank 110 . Therefore, for some wafers 30 that are suitable for being soaked in desiccant, they can also be dried in the drying tank 110 after being soaked in deionized water. The drying tank 110 can dry the wafers 30 in batches through various dry methods such as heating and applying dry air. Therefore, in this embodiment, the wafer-carrying cassette 20 can be selectively transported by the transport device 102 to the drying tank 110 according to the type of the wafer 30 .

在一實施例中,除了上述對於一整批的晶圓30進行清洗以外,對於有複雜結構的晶圓30或是不適用IPA等批次乾燥方式的晶圓30來說,上述的方式並無法達成洗淨或是乾燥的需求。因此可再將此種晶圓30依據需求,於浸泡過去離子水後,由傳送裝置102可選擇性地將載晶卡匣20移動至第二翻轉裝置104。而後,第二翻轉裝置104再沿與第一方向相反之第二方向(逆如逆時針方向)將載晶卡匣20翻轉90度,此時晶圓30呈水平狀態。In one embodiment, in addition to cleaning a whole batch of wafers 30 as described above, the above method cannot be used for wafers 30 with complex structures or wafers 30 that are not suitable for batch drying methods such as IPA. Meet the needs of washing or drying. Therefore, the wafer 30 can be immersed in ionized water according to needs, and then the transfer device 102 can selectively move the wafer cassette 20 to the second flipping device 104 . Then, the second flipping device 104 flips the wafer loading cassette 20 90 degrees in a second direction opposite to the first direction (eg, counterclockwise direction). At this time, the wafer 30 is in a horizontal state.

值得一提的是,如圖7所示,為了避免晶圓30在後續清洗時已乾燥,產生水痕或是其它後續難以清洗的情況,晶圓濕式處理與清洗系統10還可包含保濕裝置105。保濕裝置105可設置於第二翻轉裝置104上用以對第二翻轉裝置104提供一保濕液體,例如去離子水。因此在一實施例中,保濕裝置105可以使第二翻轉裝置104內有去離子水,以浸泡晶圓30,以防止晶圓30乾燥留下難以去除之水痕。在一實施例中,保濕裝置105可包含供水管、噴灑單元、水霧產生單元中的一種或多種。It is worth mentioning that, as shown in FIG. 7 , in order to prevent the wafer 30 from drying out during subsequent cleaning, causing water marks or other situations that are difficult to clean later, the wafer wet processing and cleaning system 10 may also include a moisturizing device. 105. The moisturizing device 105 can be disposed on the second flipping device 104 to provide a moisturizing liquid, such as deionized water, to the second flipping device 104 . Therefore, in one embodiment, the moisturizing device 105 can make the second flipping device 104 contain deionized water to soak the wafer 30 to prevent the wafer 30 from drying and leaving water marks that are difficult to remove. In one embodiment, the moisturizing device 105 may include one or more of a water supply pipe, a spray unit, and a water mist generating unit.

在一實施例中,晶圓濕式處理與清洗系統10還可包含排水裝置111,以排除保濕裝置105所提供的去離子水。排水裝置111可包含排水孔、抽水單元中的一種或多種。舉例來說,當第二翻轉裝置104內不需要有去離子水時,排水裝置111可將去離子水排除,使得載晶卡匣20內的晶圓30可進行下一製程。In one embodiment, the wafer wet processing and cleaning system 10 may further include a drainage device 111 to drain the deionized water provided by the moisturizing device 105 . The drainage device 111 may include one or more of a drainage hole and a water pumping unit. For example, when there is no need for deionized water in the second flipping device 104, the drainage device 111 can drain the deionized water so that the wafer 30 in the wafer loading cassette 20 can proceed to the next process.

除此之外,排水裝置111亦可包含乾燥單元,依據製程上的需求,或是設定,乾燥第二翻轉裝置104。舉例來說,若是該些晶圓30不需要傳送至單晶圓處理裝置106,進行後續的清洗處理,且已清洗完畢並乾燥,可再傳送至乾燥的第二翻轉裝置104,或是傳送至第一翻轉裝置101進行翻轉,以傳送至晶圓出入貨區109。In addition, the drainage device 111 may also include a drying unit to dry the second turning device 104 according to process requirements or settings. For example, if the wafers 30 do not need to be transferred to the single wafer processing device 106 for subsequent cleaning processing, and have been cleaned and dried, they can be transferred to the dry second flipping device 104 or transferred to The first flipping device 101 flips the wafer to transfer it to the wafer loading and unloading area 109 .

而對於上述有複雜結構的晶圓30,為了後續的清洗乾燥流程,可在載晶卡匣20由第二翻轉裝置104翻轉後,將載晶卡匣20中之晶圓30放置在單晶圓處理裝置106。在一實施例中,晶圓濕式處理與清洗系統10可更包含第二水平傳送裝置108。在第二翻轉裝置104沿第二方向將載晶卡匣20翻轉90度後,第二水平傳送裝置108自晶圓出入貨區109拿取呈水平狀態之晶圓30至單晶圓處理裝置106。For the above-mentioned wafer 30 with a complex structure, for the subsequent cleaning and drying process, after the wafer 30 in the wafer cassette 20 is turned over by the second flipping device 104, the wafer 30 in the wafer cassette 20 can be placed on a single wafer. Processing device 106. In one embodiment, the wafer wet processing and cleaning system 10 may further include a second horizontal transfer device 108 . After the second flipping device 104 flips the wafer loading cassette 20 90 degrees along the second direction, the second horizontal conveying device 108 takes the horizontal wafer 30 from the wafer loading and unloading area 109 to the single wafer processing device 106 .

進一步說明,如圖3所示,在一實施例中,第一水平傳送裝置107及第二水平傳送裝置108可為雙夾爪式(Dual Finger)之機械手臂。另外,可將第一水平傳送裝置107及第二水平傳送裝置108整合為同一裝置,以節省空間,但不以此為限。舉例來說,在其它實施例中,亦可分別設置第一水平傳送裝置107及第二水平傳送裝置108,使得第一水平傳送裝置107獨立於第二水平傳送裝置108。To further explain, as shown in FIG. 3 , in one embodiment, the first horizontal conveying device 107 and the second horizontal conveying device 108 may be a dual finger (Dual Finger) robotic arm. In addition, the first horizontal conveying device 107 and the second horizontal conveying device 108 can be integrated into the same device to save space, but are not limited to this. For example, in other embodiments, the first horizontal conveying device 107 and the second horizontal conveying device 108 can also be provided separately, so that the first horizontal conveying device 107 is independent of the second horizontal conveying device 108 .

如圖6所示,第二水平傳送裝置108可包含第二伸縮臂1081及第二承接部1082。第二承接部1082具有可吸引或夾取晶圓30的元件,例如夾爪、吸盤、抽氣孔等,以夾取或吸引晶圓30。在一實施例中,第二水平傳送裝置108自晶圓30濕式處理及清洗系統10之第二翻轉裝置104的載晶卡匣20內拿取呈水平狀態之晶圓30至單晶圓處理裝置106。但不以此為限,在適當的配置下,例如確保第一水平傳送裝置107的清潔度及乾燥度的情況下,亦可以第一水平傳送裝置107拿取呈水平狀態之晶圓30至單晶圓處理裝置106,並省略設置第二水平傳送裝置108。As shown in FIG. 6 , the second horizontal conveying device 108 may include a second telescopic arm 1081 and a second receiving portion 1082 . The second receiving part 1082 has elements that can attract or clamp the wafer 30 , such as clamping claws, suction cups, air extraction holes, etc., to clamp or attract the wafer 30 . In one embodiment, the second horizontal transfer device 108 takes the wafer 30 in a horizontal state from the wafer loading cassette 20 of the second flipping device 104 of the wafer 30 wet processing and cleaning system 10 to single wafer processing. Device 106. But it is not limited to this. Under appropriate configuration, for example, when the cleanliness and dryness of the first horizontal transfer device 107 are ensured, the first horizontal transfer device 107 can also take the wafer 30 in a horizontal state to a single unit. wafer processing device 106, and the second horizontal transfer device 108 is omitted.

在一實施例中,自第二翻轉裝置104內取出晶圓30時,操作流程可如下所示。首先,第二翻轉裝置104與第一翻轉裝置101有大致相同的結構與元件,可參閱有關圖4A、圖4B及上述說明,在此不再贅述。在載晶卡匣20翻轉後,使載晶卡匣20由垂直狀態轉為水平狀態,後續利用限位動力單元1014(氣壓缸)使驅動元件1017(推抵元件)推抵位於載晶卡匣20兩側的限位構件1015,進而使限位構件1015離開晶圓30,此時限位構件1015回到釋放位置以使晶圓30不再受到拘束。接著以第二水平傳送裝置108取出載晶卡匣20內的晶圓30以將呈水平狀態之晶圓30傳送至單晶圓處理裝置106。In one embodiment, when taking out the wafer 30 from the second flipping device 104, the operation process may be as follows. First, the second flipping device 104 and the first flipping device 101 have substantially the same structure and components. Please refer to the relevant FIG. 4A, FIG. 4B and the above description, and will not be repeated here. After the crystal-carrying cassette 20 is turned over, the crystal-carrying cassette 20 is turned from a vertical state to a horizontal state, and then the limiting power unit 1014 (pneumatic cylinder) is used to push the driving element 1017 (pushing element) against the crystal-carrying cassette. The limiting members 1015 on both sides of 20 are then moved away from the wafer 30. At this time, the limiting member 1015 returns to the release position so that the wafer 30 is no longer restrained. Then, the second horizontal transfer device 108 is used to take out the wafer 30 in the wafer loading cassette 20 and transfer the wafer 30 in a horizontal state to the single wafer processing device 106 .

在一實施例中,如圖8所示,單晶圓處理裝置106可包含旋轉台1061、液體供應裝置1062及轉軸1063。旋轉台1061用於放置晶圓30,液體供應裝置1062設置在旋轉台1061上方,用於對晶圓30施加至少一處理液體。且在一實施例中,處理液體可包含去離子水、蝕刻液或其他化學藥劑,以進一步對晶圓30進行清洗或是其它製程。In one embodiment, as shown in FIG. 8 , the single wafer processing device 106 may include a rotating stage 1061, a liquid supply device 1062, and a rotating shaft 1063. The rotating stage 1061 is used to place the wafer 30 , and the liquid supply device 1062 is disposed above the rotating stage 1061 and is used to apply at least one processing liquid to the wafer 30 . In one embodiment, the processing liquid may include deionized water, etching liquid or other chemicals to further clean the wafer 30 or perform other processes.

當清洗完後,可再以轉軸1063帶動旋轉台1061,以使得放置於旋轉台1061上的晶圓30進行高速旋轉。高速旋乾後之晶圓30,可再由水平式單晶圓機械手臂,例如第一水平傳送裝置107、第二水平傳送裝置108或其它類似於的傳送裝置傳送至晶圓出入貨區109。After cleaning is completed, the rotating shaft 1063 can be used to drive the rotating stage 1061 so that the wafer 30 placed on the rotating stage 1061 rotates at a high speed. The wafer 30 after high-speed spinning can be transferred to the wafer loading and unloading area 109 by a horizontal single-wafer robot, such as the first horizontal transfer device 107, the second horizontal transfer device 108, or other similar transfer devices.

綜上所述,本創作之晶圓濕式處理與清洗方法,可包含下列步驟:To sum up, the wafer wet processing and cleaning method of this invention may include the following steps:

拿取至少一晶圓30至設置於第一翻轉裝置101之載晶卡匣20,例如以第一水平傳送裝置107自晶圓30濕式處理及清洗系統10之晶圓出入貨區109拿取呈水平狀態之該晶圓30至載晶卡匣20;Take at least one wafer 30 to the wafer loading cassette 20 provided in the first flipping device 101, for example, use the first horizontal transfer device 107 to take the wafer 30 from the wafer loading and unloading area 109 of the wet processing and cleaning system 10 The wafer 30 in a horizontal state is moved to the wafer loading cassette 20;

以第一翻轉裝置101將載晶卡匣20沿第一方向翻轉90度;Use the first flipping device 101 to flip the crystal-carrying cassette 20 90 degrees along the first direction;

以傳送裝置102接收並移動載晶卡匣20至濕處理槽103上方,複數個製程液體分別被設置於該複數個濕處理槽103中,此外不同的製程液體分別設置於不同的濕處理槽103;The transfer device 102 is used to receive and move the wafer-carrying cassette 20 to the top of the wet processing tank 103. A plurality of process liquids are respectively arranged in the plurality of wet processing tanks 103. In addition, different process liquids are respectively arranged in different wet processing tanks 103. ;

以傳送裝置102將載晶卡匣20所承載之晶圓30依序浸泡於複數個濕處理槽103中;The transfer device 102 is used to immerse the wafers 30 carried in the wafer-carrying cassette 20 into a plurality of wet processing tanks 103 in sequence;

利用傳送裝置102可選擇性地將載晶卡匣20移動至第二翻轉裝置104;The transfer device 102 can be used to selectively move the crystal-carrying cassette 20 to the second turning device 104;

以第二翻轉裝置104沿與第一方向相反之第二方向將該載晶卡匣20翻轉90度;Use the second flipping device 104 to flip the crystal-carrying cassette 20 90 degrees in a second direction opposite to the first direction;

利用設置於第二翻轉裝置104上之保濕裝置105對第二翻轉裝置104提供保濕液體,晶圓30保持濕潤狀態;以及Utilize the moisturizing device 105 provided on the second flipping device 104 to provide moisturizing liquid to the second flipping device 104, so that the wafer 30 is kept in a moist state; and

將由第二翻轉裝置104翻轉後之載晶卡匣20中之晶圓30放置在單晶圓處理裝置106。The wafer 30 in the wafer loading cassette 20 flipped by the second flipping device 104 is placed in the single wafer processing device 106 .

當單晶圓處理裝置106清洗完晶圓30後,可再以轉軸1063帶動旋轉台1061,以使得放置於旋轉台1061上的晶圓30進行高速旋轉。高速旋乾後之晶圓30,可再由水平式單晶圓機械手臂,例如第一水平傳送裝置107、第二水平傳送裝置108或其它類似於的傳送裝置傳送至晶圓出入貨區109。After the single wafer processing device 106 has cleaned the wafer 30, the rotating shaft 1063 can be used to drive the rotating stage 1061, so that the wafer 30 placed on the rotating stage 1061 rotates at a high speed. The wafer 30 after high-speed spinning can be transferred to the wafer loading and unloading area 109 by a horizontal single-wafer robot, such as the first horizontal transfer device 107, the second horizontal transfer device 108, or other similar transfer devices.

進一步說明,本創作的晶圓濕式處理與清洗系統10可將各種不同清洗需求的晶圓30進行處理。舉例來說,對於適合批次處理的晶圓30,可僅將該些晶圓30浸泡在濕處理槽103中,並視情況是否傳送至乾燥槽110或是以濕處理槽103中的乾燥劑進行乾燥,乾燥完成之後即可在乾燥狀態之下,由第一翻轉裝置101或第二翻轉裝置104將晶圓翻轉回水平狀態,並傳送至晶圓出入貨區109,以進行後續製程。To further explain, the wafer wet processing and cleaning system 10 of the present invention can process wafers 30 with various cleaning requirements. For example, for wafers 30 suitable for batch processing, these wafers 30 can only be soaked in the wet processing tank 103, and depending on the situation, whether to be transferred to the drying tank 110 or to use the desiccant in the wet processing tank 103. Drying is carried out. After the drying is completed, the first flipping device 101 or the second flipping device 104 can flip the wafer back to the horizontal state in the dry state and transfer it to the wafer loading and unloading area 109 for subsequent processes.

而對於有複雜表面結構的晶圓30,例如進行三維積體電路(three-dimensional integrated circuit , 3D-IC)封裝之晶圓,則適合以單晶圓處理裝置106進行後續的清洗及乾燥,換言之,傳送裝置102可依據晶圓30所需的製程在適當的時機將裝載有晶圓30的載晶卡匣20傳送至適當的位置進行處理。For wafers 30 with complex surface structures, such as wafers for three-dimensional integrated circuit (3D-IC) packaging, the single wafer processing device 106 is suitable for subsequent cleaning and drying. In other words, , the transfer device 102 can transfer the wafer loading cassette 20 loaded with the wafer 30 to an appropriate location for processing at an appropriate time according to the required process of the wafer 30 .

在此情況之下,由於濕式工作台(Wet Bench)設備(包含傳送裝置102、濕處理槽103等的設備)、單晶圓處理裝置106、載晶卡匣翻轉裝置相互整合,因此對於需要單晶圓處理裝置106處理的晶圓可在晶圓濕式處理與清洗10完成處理與清洗,可增加產品的製造效率。In this case, since the wet bench equipment (including the transfer device 102, the wet processing tank 103, etc.), the single wafer processing device 106, and the wafer-carrying cassette turning device are integrated with each other, it is necessary to The wafers processed by the single wafer processing device 106 can be processed and cleaned in the wafer wet processing and cleaning 10, which can increase the manufacturing efficiency of the product.

另外,本創作提供了晶圓濕式處理與清洗系統及方法,可以防止去離子水未能完全清洗去除晶圓微粒,或是晶圓未乾燥導致水痕殘留等情況。因此,當晶圓在經歷批次浸泡蝕刻或清洗槽體製程後,能利用單晶圓處理裝置之優勢,進行後續處理,例如以去離子水噴灑清洗晶圓表面、高速旋轉乾燥晶圓等。因此,對於使用快速降液浸洗(Quick Dump Rinse ,QDR)槽體與使用IPA槽體乾燥,無法達到有效清洗與乾燥複雜結構晶圓之問題得以解決。In addition, this creation provides a wafer wet processing and cleaning system and method, which can prevent the deionized water from failing to completely clean and remove wafer particles, or the wafer is not dry, resulting in water marks remaining. Therefore, after the wafers undergo batch immersion etching or tank cleaning processes, the advantages of the single-wafer processing device can be used for subsequent processing, such as spraying deionized water to clean the wafer surface, high-speed rotation and drying of the wafers, etc. Therefore, the problem that the wafers with complex structures cannot be effectively cleaned and dried using the Quick Dump Rinse (QDR) tank and the IPA tank drying is solved.

以上所述僅為舉例性,而非為限制性者。任何未脫離本創作之精神與範疇,而對其進行之等效修改或變更,均應包含於後附之申請專利範圍中。The above is only illustrative and not restrictive. Any equivalent modifications or changes that do not depart from the spirit and scope of this creation shall be included in the appended patent application scope.

10:晶圓濕式處理與清洗系統 101:第一翻轉裝置 1011:基座 1012:支撐架 1013:翻轉架 1014:翻轉動力單元 1015:限位構件 1016:限位動力單元 1017:驅動元件 102:傳送裝置 1021:承載機構 1022:平移機構 1023:升降機構 103:濕處理槽 104:第二翻轉裝置 105:保濕裝置 106:單晶圓處理裝置 1061:旋轉台 1062:液體供應裝置 1063:轉軸 107:第一水平傳送裝置 1071:第一伸縮臂 1072:第一承接部 108:第二水平傳送裝置 1081:第二伸縮臂 1082:第二承接部 109:晶圓出入貨區 110:乾燥槽 111:排水裝置 20:載晶卡匣 201:載晶匣槽 30:晶圓 40:3D-IC晶圓 41:表面結構 42:殘留物 10: Wafer wet processing and cleaning system 101:First flipping device 1011:Pedestal 1012: Support frame 1013: Flip rack 1014: Flip power unit 1015:Limiting member 1016:Limit power unit 1017: Drive components 102:Transmission device 1021: Carrying mechanism 1022: Translation mechanism 1023:Lifting mechanism 103: Wet treatment tank 104: Second flipping device 105:Moisturizing device 106:Single wafer processing equipment 1061: Rotary table 1062:Liquid supply device 1063:Shaft 107: First horizontal conveyor 1071:First telescopic arm 1072:The first undertaking department 108: Second horizontal conveyor 1081:Second telescopic arm 1082:Second Undertaking Department 109: Wafer entry and exit area 110:Drying tank 111: Drainage device 20:Crystal cassette 201:Crystal cassette slot 30:wafer 40:3D-IC wafer 41:Surface structure 42:Residue

圖1為習知技術中3D-IC晶圓之清洗後示意圖。Figure 1 is a schematic diagram of a 3D-IC wafer after cleaning in the conventional technology.

圖2為根據本創作之實施例之晶圓濕式處理與清洗系統之示意圖。FIG. 2 is a schematic diagram of a wafer wet processing and cleaning system according to an embodiment of the present invention.

圖3為根據本創作之實施例之水平傳送裝置之示意圖。Figure 3 is a schematic diagram of a horizontal conveying device according to an embodiment of the present invention.

圖4A為根據本創作之實施例之翻轉裝置之第一示意圖。Figure 4A is a first schematic diagram of a flipping device according to an embodiment of the invention.

圖4B為根據本創作之實施例之翻轉裝置之第二示意圖。Figure 4B is a second schematic diagram of a flipping device according to an embodiment of the present invention.

圖5為根據本創作之實施例之傳送裝置之示意圖。Figure 5 is a schematic diagram of a transmission device according to an embodiment of the present invention.

圖6為根據本創作之實施例之晶圓濕式處理與清洗系統之實施示意圖。FIG. 6 is a schematic diagram of the implementation of a wafer wet processing and cleaning system according to an embodiment of the present invention.

圖7為根據本創作之實施例之翻轉裝置之第二示意圖。Figure 7 is a second schematic diagram of a flipping device according to an embodiment of the present invention.

圖8為根據本創作之實施例之單晶圓處理裝置之示意圖。FIG. 8 is a schematic diagram of a single wafer processing apparatus according to an embodiment of the present invention.

10:晶圓濕式處理與清洗系統 10: Wafer wet processing and cleaning system

101:第一翻轉裝置 101:First flipping device

102:傳送裝置 102:Transmission device

103:濕處理槽 103: Wet treatment tank

104:第二翻轉裝置 104: Second flipping device

106:單晶圓處理裝置 106:Single wafer processing equipment

107:第一水平傳送裝置 107: First horizontal conveyor

108:第二水平傳送裝置 108: Second horizontal conveyor

109:晶圓出入貨區 109: Wafer entry and exit area

Claims (10)

一種晶圓濕式處理與清洗系統,包含: 一第一翻轉裝置,用以將一載晶卡匣沿一第一方向翻轉90度; 一傳送裝置,用以接收並移動該載晶卡匣; 複數個濕處理槽,複數個製程液體分別被設置於該複數個濕處理槽中,該傳送裝置將該載晶卡匣所承載之至少一晶圓依序浸泡於該複數個濕處理槽中; 一第二翻轉裝置,其中該傳送裝置可選擇性地將該載晶卡匣移動至該第二翻轉裝置,該第二翻轉裝置沿與該第一方向相反之一第二方向將該載晶卡匣翻轉90度; 一保濕裝置,設置於該第二翻轉裝置上,用以對該第二翻轉裝置提供一保濕液體;以及 至少一單晶圓處理裝置,其中由該第二翻轉裝置翻轉後之該載晶卡匣中之該晶圓放置在該單晶圓處理裝置。 A wafer wet processing and cleaning system, including: A first flipping device used to flip a crystal-carrying cassette 90 degrees along a first direction; a transmission device for receiving and moving the crystal-carrying cassette; A plurality of wet processing tanks, a plurality of process liquids are respectively provided in the plurality of wet processing tanks, and the transfer device immerses at least one wafer carried by the wafer carrying cassette into the plurality of wet processing tanks in sequence; A second flipping device, wherein the transfer device can selectively move the crystal-carrying cassette to the second flipping device, and the second flipping device moves the crystal-carrying cassette in a second direction opposite to the first direction. The box is turned 90 degrees; A moisturizing device is provided on the second flipping device to provide a moisturizing liquid to the second flipping device; and At least one single wafer processing device, wherein the wafer in the wafer loading cassette flipped by the second flipping device is placed in the single wafer processing device. 如請求項1所述之晶圓濕式處理與清洗系統,其中該傳送裝置包含: 一承載機構,用以接收並承載該載晶卡匣; 一平移機構,與該承載機構相連接,用以驅動該承載機構於一水平方向移動;以及 一升降機構,與該平移機構相連接,用以驅動該承載機構於一垂直方向移動。 The wafer wet processing and cleaning system as described in claim 1, wherein the transfer device includes: a carrying mechanism for receiving and carrying the crystal-carrying cassette; A translation mechanism is connected to the carrying mechanism and used to drive the carrying mechanism to move in a horizontal direction; and A lifting mechanism is connected to the translation mechanism and used to drive the carrying mechanism to move in a vertical direction. 如請求項1所述之晶圓濕式處理與清洗系統,更包含一第一水平傳送裝置,該第一水平傳送裝置自該晶圓濕式處理及清洗系統之一晶圓出入貨區拿取呈一水平狀態之該晶圓至該載晶卡匣。The wafer wet processing and cleaning system as claimed in claim 1 further includes a first horizontal transfer device, which is taken from a wafer entry and exit area of the wafer wet processing and cleaning system. The wafer in a horizontal state is placed in the wafer loading cassette. 如請求項3所述之晶圓濕式處理與清洗系統,更包含一第二水平傳送裝置,在該第二翻轉裝置沿該第二方向將該載晶卡匣翻轉90度後,該第二水平傳送裝置自該載晶卡匣拿取呈該水平狀態之該晶圓至該單晶圓處理裝置。The wafer wet processing and cleaning system as described in claim 3 further includes a second horizontal conveying device. After the second flipping device flips the wafer-carrying cassette 90 degrees along the second direction, the second The horizontal transfer device takes the wafer in the horizontal state from the wafer loading cassette to the single wafer processing device. 如請求項1所述之晶圓濕式處理與清洗系統,其中該單晶圓處理裝置包含: 一旋轉台,用於放置該晶圓;以及 一液體供應裝置,設置在該旋轉台上方,用於對該晶圓施加至少一處理液體。 The wafer wet processing and cleaning system as described in claim 1, wherein the single wafer processing device includes: a rotating stage for placing the wafer; and A liquid supply device is disposed above the rotating stage and is used to apply at least one processing liquid to the wafer. 如請求項5所述之晶圓濕式處理與清洗系統,其中該處理液體包含去離子水或蝕刻液。The wafer wet processing and cleaning system of claim 5, wherein the processing liquid includes deionized water or etching liquid. 如請求項1所述之晶圓濕式處理與清洗系統,其中該複數個製程液體包含蝕刻液、乾燥劑、去離子水中的一種或多種。The wafer wet processing and cleaning system of claim 1, wherein the plurality of process liquids include one or more of etching liquid, desiccant, and deionized water. 如請求項7所述之晶圓濕式處理與清洗系統,其中不同的各該複數個製程液體分別被設置於不同的各該複數個濕處理槽中。The wafer wet processing and cleaning system as claimed in claim 7, wherein different process liquids are respectively disposed in different wet processing tanks. 如請求項1所述之晶圓濕式處理與清洗系統,更包含至少一乾燥槽,該載晶卡匣可選擇性地由該傳送裝置傳送至該乾燥槽。The wafer wet processing and cleaning system of claim 1 further includes at least one drying tank, and the wafer-carrying cassette can be selectively transferred to the drying tank by the transfer device. 一種晶圓濕式處理與清洗系統,包含: 一第一翻轉裝置,用以將一載晶卡匣沿一第一方向翻轉90度; 一傳送裝置,用以接收並移動該載晶卡匣; 複數個濕處理槽,複數個製程液體分別被設置於該複數個濕處理槽中,該傳送裝置將該載晶卡匣所承載之至少一晶圓依序浸泡於該複數個濕處理槽中; 一第二翻轉裝置,其中該傳送裝置可選擇性地將該載晶卡匣移動至該第二翻轉裝置,該第二翻轉裝置沿與該第一方向相反之一第二方向將該載晶卡匣翻轉90度;以及 至少一單晶圓處理裝置,其中由該第二翻轉裝置翻轉後之該載晶卡匣中之該晶圓放置在該單晶圓處理裝置。 A wafer wet processing and cleaning system, including: A first flipping device used to flip a crystal-carrying cassette 90 degrees along a first direction; a transmission device for receiving and moving the crystal-carrying cassette; A plurality of wet processing tanks, a plurality of process liquids are respectively arranged in the plurality of wet processing tanks, and the transfer device immerses at least one wafer carried by the wafer carrying cassette into the plurality of wet processing tanks in sequence; A second flipping device, wherein the transfer device can selectively move the crystal-carrying cassette to the second flipping device, and the second flipping device moves the crystal-carrying cassette in a second direction opposite to the first direction. The box is turned 90 degrees; and At least one single wafer processing device, wherein the wafer in the wafer loading cassette flipped by the second flipping device is placed in the single wafer processing device.
TW112208494U 2023-08-10 2023-08-10 System for wafer wet processing and cleaning TWM647657U (en)

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