TWM645800U - Laser-treated anti-deposition object - Google Patents
Laser-treated anti-deposition object Download PDFInfo
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- TWM645800U TWM645800U TW112205601U TW112205601U TWM645800U TW M645800 U TWM645800 U TW M645800U TW 112205601 U TW112205601 U TW 112205601U TW 112205601 U TW112205601 U TW 112205601U TW M645800 U TWM645800 U TW M645800U
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- 238000000034 method Methods 0.000 claims abstract description 90
- 239000011737 fluorine Substances 0.000 claims abstract description 88
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 88
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 85
- 239000011247 coating layer Substances 0.000 claims abstract description 84
- 239000000463 material Substances 0.000 claims abstract description 18
- 238000000151 deposition Methods 0.000 claims description 75
- 238000005542 laser surface treatment Methods 0.000 claims description 45
- 239000013049 sediment Substances 0.000 claims description 34
- 239000000126 substance Substances 0.000 claims description 14
- 230000007797 corrosion Effects 0.000 claims description 8
- 238000005260 corrosion Methods 0.000 claims description 8
- 229910001220 stainless steel Inorganic materials 0.000 claims description 7
- 239000010935 stainless steel Substances 0.000 claims description 7
- 239000000654 additive Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 238000000231 atomic layer deposition Methods 0.000 claims description 6
- 230000003197 catalytic effect Effects 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 5
- 238000001020 plasma etching Methods 0.000 claims description 5
- 239000002904 solvent Substances 0.000 claims description 5
- 230000003746 surface roughness Effects 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 125000001153 fluoro group Chemical group F* 0.000 claims description 3
- 230000005660 hydrophilic surface Effects 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 238000007517 polishing process Methods 0.000 claims description 3
- 230000005661 hydrophobic surface Effects 0.000 claims description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 12
- 238000012423 maintenance Methods 0.000 abstract description 7
- 238000004140 cleaning Methods 0.000 abstract description 5
- 239000002245 particle Substances 0.000 abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 4
- 238000012360 testing method Methods 0.000 description 15
- 238000000576 coating method Methods 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 125000000524 functional group Chemical group 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 5
- 238000006482 condensation reaction Methods 0.000 description 5
- 239000012530 fluid Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- -1 fluorocarbon compound Chemical class 0.000 description 4
- 230000002209 hydrophobic effect Effects 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 230000003075 superhydrophobic effect Effects 0.000 description 4
- 230000003373 anti-fouling effect Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000003670 easy-to-clean Effects 0.000 description 3
- 238000013532 laser treatment Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000005871 repellent Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 125000003342 alkenyl group Chemical group 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 239000002912 waste gas Substances 0.000 description 2
- 239000010963 304 stainless steel Substances 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 101001136034 Homo sapiens Phosphoribosylformylglycinamidine synthase Proteins 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 150000005857 PFAS Chemical class 0.000 description 1
- 229920001774 Perfluoroether Polymers 0.000 description 1
- 102100036473 Phosphoribosylformylglycinamidine synthase Human genes 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910000589 SAE 304 stainless steel Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 125000004423 acyloxy group Chemical group 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000001110 calcium chloride Substances 0.000 description 1
- 229910001628 calcium chloride Inorganic materials 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000007542 hardness measurement Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000006459 hydrosilylation reaction Methods 0.000 description 1
- 238000009863 impact test Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229920000592 inorganic polymer Polymers 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910001463 metal phosphate Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000013112 stability test Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Abstract
Description
本創作是有關於一種真空用部件,特別是有關於一種經雷射表面處理之防沉積物件。 The invention relates to a vacuum component, in particular to an anti-sediment component with laser surface treatment.
近年來,由於半導體技術不斷地蓬勃發展,使得科技類產品得以大步躍進。在半導體晶片的製程中,晶片通常置於製程設備中以進行相關的製程作業,且搭配真空幫浦來將製程設備中的空氣或氣體抽出,使製程設備保持在負壓狀態,亦即到某種程度的真空。然而,於半導體製程中,製程氣體或製程廢氣等製程物質容易沉積或累積在流體通道中,進而導致維修周期越來越短,進而影響製造成本與時程。 In recent years, due to the continuous vigorous development of semiconductor technology, technological products have made great strides. In the manufacturing process of semiconductor wafers, wafers are usually placed in process equipment to perform related process operations, and a vacuum pump is used to extract air or gas from the process equipment to keep the process equipment in a negative pressure state, that is, to a certain A degree of vacuum. However, in the semiconductor manufacturing process, process substances such as process gas or process exhaust gas are easily deposited or accumulated in the fluid channels, which in turn leads to shorter and shorter maintenance cycles, thereby affecting manufacturing costs and schedules.
有鑑於此,本創作之一目的就是在提供一種經雷射表面處理之防沉積物件,以解決上述習知技藝之問題。 In view of this, one purpose of this invention is to provide an anti-sediment component with laser surface treatment to solve the above-mentioned problems of the conventional art.
為達前述目的,本創作提出一種經雷射表面處理之防沉積物件,該防沉積物件於一真空環境中接觸一製程設備進行一製程時所使用或排放之一製程物質,包含:一主體結構,其中該主體結構之至少一初始表面係經由一雷 射進行一雷射表面處理之步驟而成為具有複數個微結構之一雷射處理表面;以及一氟素鍍膜層,該氟素鍍膜層係覆蓋於該主體結構之該雷射處理表面之該複數個微結構上,藉以作為該主體結構之一防沉積表面,其中該主體結構之該初始表面與該雷射處理表面為親水性表面,該雷射處理表面之親水性高於該初始表面之親水性,且該防沉積表面為疏水性表面,藉以使得該防沉積表面相較於該主體結構之該初始表面及該雷射處理表面對於該製程物質具有較高之一接觸角。 In order to achieve the aforementioned purpose, this invention proposes an anti-deposition component with laser surface treatment. The anti-deposition component contacts a process substance used or emitted when a process equipment is performing a process in a vacuum environment, and includes: a main structure. , wherein at least one initial surface of the main structure is passed through a laser Performing a laser surface treatment step to form a laser-treated surface having a plurality of microstructures; and a fluorine coating layer covering the plurality of laser-treated surfaces of the main structure On a microstructure, it serves as an anti-deposition surface of the main structure, wherein the initial surface of the main structure and the laser-treated surface are hydrophilic surfaces, and the hydrophilicity of the laser-treated surface is higher than that of the initial surface. property, and the anti-deposition surface is a hydrophobic surface, so that the anti-deposition surface has a higher contact angle with the process substance compared to the initial surface of the main structure and the laser-treated surface.
其中,該氟素鍍膜層係塗佈式覆蓋於該主體結構之該雷射處理表面上,藉以使得該氟素鍍膜層覆蓋於該主體結構之該複數個微結構上。 Wherein, the fluorine coating layer is coated on the laser-treated surface of the main structure, so that the fluorine coating layer covers the plurality of microstructures of the main structure.
其中,該氟素鍍膜層係共形覆蓋於該主體結構之該複數個微結構上。 Wherein, the fluorine coating layer conformally covers the plurality of microstructures of the main structure.
其中,該主體結構之該初始表面係經由具有一能量密度之該雷射照射而形成具有該複數個微結構之該雷射處理表面,其中該能量密度之範圍從0.01W/cm2至110W/cm2。 Wherein, the initial surface of the main structure is irradiated by the laser with an energy density to form the laser-treated surface with the plurality of microstructures, wherein the energy density ranges from 0.01W/cm 2 to 110W/ cm 2 .
其中,該雷射之掃描速度之範圍從50mm/s至100mm/s,該雷射之掃描頻率之範圍從10kHz至40kHz,該雷射之脈衝寬度之範圍從20ns至200ns,該雷射之雷射掃描間距之範圍從10μm至200μm,藉以形成該複數個微結構於該主體結構上。 Among them, the scanning speed of the laser ranges from 50mm/s to 100mm/s, the scanning frequency of the laser ranges from 10kHz to 40kHz, the pulse width of the laser ranges from 20ns to 200ns, and the laser The radiation scanning pitch ranges from 10 μm to 200 μm, thereby forming the plurality of microstructures on the main structure.
其中,該雷射之功率之範圍從10瓦至100瓦,該雷射之波長之範圍從380nm至1400nm,藉以形成該複數個微結構於該主體結構上。 The power of the laser ranges from 10 watts to 100 watts, and the wavelength of the laser ranges from 380 nm to 1400 nm, thereby forming the plurality of microstructures on the main structure.
其中,該主體結構之材質為不鏽鋼。 Among them, the main structure is made of stainless steel.
其中,該主體結構為該製程設備之一出口管件或該製程設備之一週邊設備之管件或部件。 Wherein, the main structure is an outlet pipe fitting of the process equipment or a pipe fitting or component of a peripheral equipment of the process equipment.
其中,該氟素鍍膜層係位於該主體結構之一部位之該表面上,該部位為該主體結構之一傾斜部位、一平面部位或一彎曲部位。 Wherein, the fluorine coating layer is located on the surface of a part of the main structure, which part is an inclined part, a flat part or a curved part of the main structure.
其中,該防沉積表面相較於該主體結構之該初始表面具有較高之一抗酸腐蝕性與一抗電漿蝕刻性。 Wherein, the anti-deposition surface has higher acid corrosion resistance and plasma etching resistance than the initial surface of the main structure.
其中,該防沉積表面相較於該主體結構之該初始表面具有近似或較高之一硬度。 Wherein, the anti-deposition surface has a similar or higher hardness than the initial surface of the main structure.
其中,具有該複數個微結構之該雷射處理表面之一表面粗糙度高於該主體結構之該初始表面之一表面粗糙度。 Wherein, the surface roughness of the laser-treated surface having the plurality of microstructures is higher than the surface roughness of the original surface of the main structure.
其中,該主體結構之該初始表面為經過一拋光處理之一拋光表面。 Wherein, the initial surface of the main structure is a polished surface that has undergone a polishing process.
其中,該氟素鍍膜層之成分係由氟碳化合物(Fluoro-carbons)佔0.01~20%wt、烷氧基矽烷類佔5~50wt、催化添加物佔0.01%~20%wt及溶劑佔10~90wt所組成。 Among them, the components of the fluorine coating layer are fluorocarbons (Fluoro-carbons) accounting for 0.01~20%wt, alkoxysilanes accounting for 5~50wt, catalytic additives accounting for 0.01%~20%wt, and solvents accounting for 10% Composed of ~90wt.
其中,該製程設備所進行之該製程為一原子層沉積(ALD)製程、一有機金屬化學氣相沉積(MOCVD)製程或一鋁墊(Al-pad)製程。 Wherein, the process performed by the process equipment is an atomic layer deposition (ALD) process, an organic metal chemical vapor deposition (MOCVD) process or an aluminum pad (Al-pad) process.
其中,該防沉積表面之該接觸角之範圍為99度至150.2度。 Wherein, the contact angle of the anti-deposition surface ranges from 99 degrees to 150.2 degrees.
承上所述,本創作之經雷射表面處理之防沉積物件,具有以下優點: Based on the above, the anti-sediment component with laser surface treatment of this invention has the following advantages:
(1)藉由在真空部件之主體結構之初始表面上進行雷射表面處理之步驟,可形成具有複數個微結構之雷射處理表面,藉此可增加親水性及粗糙度,有助於後續使氟素鍍膜層覆蓋在微結構上。 (1) By performing laser surface treatment on the initial surface of the main structure of the vacuum component, a laser-treated surface with a plurality of microstructures can be formed, thereby increasing hydrophilicity and roughness, which is helpful for subsequent The fluorine coating layer is covered on the microstructure.
(2)藉由在真空部件之雷射處理表面上塗佈高硬度之氟素鍍膜層作為防沉積表面,可防止真空部件受到微粒等製程物質撞擊而刮傷。 (2) By coating the laser-treated surface of the vacuum component with a high-hardness fluorine coating layer as an anti-deposition surface, the vacuum component can be prevented from being scratched by impact from particles and other process substances.
(3)藉由在真空部件之雷射處理表面上塗佈高接觸角之氟素鍍膜層作為防沉積表面,可防止真空部件產生沉積現象,且可達到自清潔及易清潔之效果。 (3) By coating the laser-treated surface of the vacuum components with a high contact angle fluorine coating layer as an anti-deposition surface, the vacuum components can be prevented from depositing and achieve self-cleaning and easy-to-clean effects.
(4)氟素鍍膜層對於具有雷射處理表面之主體結構具有良好之密著性,可避免在製程中產生剝離現象。 (4) The fluorine coating layer has good adhesion to the main structure with a laser-treated surface, which can avoid peeling off during the manufacturing process.
(5)藉由提供以氟素鍍膜層作為防沉積表面之防沉積物件,可節省頻繁維修的資金和人力。 (5) By providing anti-deposition components using a fluorine coating layer as an anti-deposition surface, money and manpower for frequent maintenance can be saved.
茲為使鈞審對本創作的技術特徵及所能達到的技術功效有更進一步的瞭解與認識,謹佐以較佳的實施例及配合詳細的說明如後。 In order to enable Jun Shen to have a better understanding of the technical characteristics and the technical effects that can be achieved by this invention, the following is a preferred embodiment and a detailed description.
10:防沉積物件 10: Anti-sediment parts
20:主體結構 20:Main structure
22a:初始表面 22a:Initial surface
22b:雷射處理表面 22b: Laser treated surface
22c:防沉積表面 22c: Anti-deposition surface
24:部位 24: parts
26:螺旋導流槽 26:Spiral guide groove
27:微結構 27:Microstructure
30:氟素鍍膜層 30: Fluorine coating layer
40:雷射產生器 40:Laser generator
42:雷射 42:Laser
44:透鏡組 44: Lens group
100:製程設備 100: Process equipment
110:製程物質 110:Process material
θ:接觸角 θ: contact angle
X、Y、Z:軸 X, Y, Z: axis
S10、S20、S30:步驟 S10, S20, S30: steps
圖1為本創作之經雷射表面處理之防沉積物件之局部結構示意圖。 Figure 1 is a schematic diagram of the partial structure of the anti-sediment component with laser surface treatment of this invention.
圖2為本創作之經雷射表面處理之防沉積物件之製造流程圖。 Figure 2 is a manufacturing flow chart of the anti-deposition component with laser surface treatment of this invention.
圖3為本創作之經雷射表面處理之防沉積物件之製造流程剖面示意圖。 Figure 3 is a schematic cross-sectional view of the manufacturing process of the anti-deposition component with laser surface treatment of this invention.
圖4為本創作之經雷射表面處理之防沉積物件應用於製程設備之示意圖。 Figure 4 is a schematic diagram of the anti-deposition component with laser surface treatment of this invention applied to process equipment.
圖5為本創作之經雷射表面處理之防沉積物件之第一種實施範例之剖面結構示意圖。 Figure 5 is a schematic cross-sectional structural view of the first implementation example of the laser surface-treated anti-deposition component of this invention.
圖6為本創作之經雷射表面處理之防沉積物件之第二種實施範例之剖面結構示意圖。 Figure 6 is a schematic cross-sectional structural diagram of the second implementation example of the laser surface-treated anti-sediment component of this invention.
圖7為本創作之經雷射表面處理之防沉積物件之第三種實施範例之剖面結構示意圖。 Figure 7 is a schematic cross-sectional structural diagram of the third implementation example of the laser surface-treated anti-deposition component of this invention.
圖8為本創作之經雷射表面處理之防沉積物件之第四種實施範例之立體結構示意圖。 Figure 8 is a schematic three-dimensional structural diagram of the fourth implementation example of the laser surface-treated anti-deposition component of this invention.
為利瞭解本創作之技術特徵、內容與優點及其所能達成之功效,茲將本創作配合圖式,並以實施例之表達形式詳細說明如下,而其中所使用之圖式,其主旨僅為示意及輔助說明書之用,未必為本創作實施後之真實比例與精準配置,故不應就所附之圖式的比例與配置關係解讀、侷限本創作於實際實施上的權利範圍。此外,為使便於理解,下述實施例中的相同元件係以相同的符號標示來說明。 In order to facilitate understanding of the technical features, content and advantages of this invention and the effects it can achieve, this invention is described in detail below with diagrams and in the form of expressions of embodiments. The purpose of the diagrams used is only They are for illustration and auxiliary instructions, and may not represent the true proportions and precise configurations of the creation after its implementation. Therefore, the proportions and configurations of the attached drawings should not be interpreted to limit the scope of rights in the actual implementation of this creation. In addition, to facilitate understanding, the same elements in the following embodiments are labeled with the same symbols for explanation.
另外,在全篇說明書與申請專利範圍所使用的用詞,除有特別註明外,通常具有每個用詞使用在此領域中、在此揭露的內容中與特殊內容中的平常意義。某些用以描述本創作的用詞將於下或在此說明書的別處討論,以提供本領域技術人員在有關本創作的描述上額外的引導。 In addition, unless otherwise noted, the terms used throughout the specification and patent application generally have the ordinary meanings of each term used in the field, the content disclosed herein, and the specific content. Certain terms used to describe the invention are discussed below or elsewhere in this specification to provide those skilled in the art with additional guidance in describing the invention.
關於本文中如使用“第一”、“第二”、“第三”、“第四”等,並非特別指稱次序或順位的意思,亦非用以限定本創作,其僅僅是為了區別以相同技術用語描述的組件或操作而已。 The use of "first", "second", "third", "fourth", etc. in this article does not specifically refer to the order or order, nor is it used to limit this creation. It is only used to distinguish between the same and the same. Technical terms describing components or operations only.
其次,在本文中如使用用詞“包含”、“包括”、“具有”、“含有”等,其均為開放性的用語,即意指包含但不限於。 Secondly, if the words "include", "includes", "have", "contains", etc. are used in this article, they are all open terms, which means including but not limited to.
由於製程設備進行各種半導體製程時會使用或排放許多製程物質,而且這些製程物質相當容易沉積在其所接觸之管件或管壁上,因此為了避免製程物質產生沉積,本創作提供一種經雷射表面處理之防沉積物件及其製作方法,此防沉積物件具有相當高之接觸角(亦可稱為水滴接觸角或水滴角)。而且,相對於僅具有粗糙結構或僅具有氟素鍍膜層之表面,此防沉積物件之防沉積表面具有更高之接觸角,意即具有超疏水及超疏油效果。圖1為本創作之經雷射表面處理之防沉積物件之局部結構示意圖。圖2為本創作之經雷射表面處理之防沉積物件之製造流程圖。圖3為本創作之經雷射表面處理之防沉積物件之製造流程剖面示意圖。 Since process equipment uses or emits many process substances when performing various semiconductor processes, and these process substances are easily deposited on the pipes or pipe walls in contact with them, so in order to avoid the deposition of process substances, this invention provides a laser-irradiated surface An anti-sediment component and a manufacturing method thereof are provided. The anti-sediment component has a very high contact angle (also known as water droplet contact angle or water droplet angle). Moreover, compared to a surface that only has a rough structure or a fluorine coating layer, the anti-deposition surface of this anti-deposition component has a higher contact angle, which means it has super-hydrophobic and super-oleophobic effects. Figure 1 is a schematic diagram of the partial structure of the anti-sediment component with laser surface treatment of this invention. Figure 2 is a manufacturing flow chart of the anti-deposition component with laser surface treatment of this invention. Figure 3 is a schematic cross-sectional view of the manufacturing process of the anti-deposition component with laser surface treatment of this invention.
請參閱圖1至圖3所示,本創作之經雷射表面處理之防沉積物件10包含主體結構20及氟素鍍膜層30,其中主體結構20具有經由雷射表面處理所產生之粗糙結構(即,複數個微結構27),氟素鍍膜層30覆蓋於主體結構20之微結構27上而形成防沉積表面22c。複數個微結構27例如為排列於主體結構20上。本創作係以複數個間隔式排列之微結構27舉例說明,其中複數個微結構27例如為複數個沿Y軸方向延伸之凸狀肋條且其為沿X軸方向排列於主體結構20上,其頂部形狀可為如圖1所示之弧狀、半圓弧狀、平面狀、傾斜狀、不規則形狀或其他形狀,且相鄰之微結構27之間隔例如為上述之雷射掃描間距,但不限於此,微結
構27也可例如為呈點陣式排列。或者是,複數個微結構27亦可例如為彼此鄰接,意即任何外型之微結構27或任何排列型式,只要可達成本創作提升接觸角之效果,皆屬於本創作請求保護之範圍。此外,本創作係以氟素鍍膜層30共形(conformal)覆蓋主體結構20之微結構27之表面舉例說明,意即氟素鍍膜層30隨著微結構27覆蓋在微結構27上,而且覆蓋在相鄰之微結構27之間的主體結構20上,但不限於此,只要可達成本創作提升接觸角之效果,任何覆蓋型態皆屬於本創作請求保護之範圍。
Please refer to Figures 1 to 3. The
在本創作之經雷射表面處理之防沉積物件之製作方法中,首先如圖2及圖3中的(A)圖所示,提供主體結構20(步驟S10),其中主體結構20具有至少一初始表面22a。接著,如圖2及圖3中的(B)圖,利用雷射42對主體結構20之初始表面22a進行雷射表面處理之步驟(步驟S20),藉以使得初始表面22a成為具有複數個微結構27之雷射處理表面22b。其中,本創作係例如藉由雷射產生器40產生一道或複數道雷射42,此雷射42為一種脈衝光,且此雷射42係例如經由透鏡組44傳遞至主體結構20之初始表面22a上,且可沿著X軸、Y軸或Z軸方向移動,藉由例如重熔不鏽鋼材質之主體結構20之初始表面22a,使其改質而生成奈米級的皺褶,即複數個微結構27,因此可產生較大的總接觸面積(粗糙度)。其中,雷射產生器40例如為Nd:YAG雷射,但不限於此。然後,如圖2及圖3中的(C)圖所示,對主體結構20之雷射處理表面22b進行覆蓋氟素鍍膜層30之步驟(步驟S30),用以將氟素鍍膜層30覆蓋於主體結構20之雷射處理表面22b之複數個微結構27上,藉以形成防沉積表面22c於主體結構20上。本創作之一項特色在於主體結構20之初始表面22a係經由雷射42進行雷射表面處理之步驟而成為具有複數個微結構27之雷射處理表面22b。其中,如果主體結構20之初始表面22a為親水性
(Hydrophilic,接觸角約為80~86度),則經過雷射表面處理之步驟之後,主體結構20之雷射處理表面22b之親水性將提升為超親水性(Super hydrophilic,接觸角約小於20度)。相反地,如果主體結構20之初始表面22a為疏水性(Hydrophobic),則經過雷射表面處理之步驟之後,主體結構20之雷射處理表面22b之疏水性將會增加。然而,本創作將氟素鍍膜層30覆蓋於超親水性之雷射處理表面22b之後,其所形成之防沉積表面22c將具有超疏水性(Super hydrophobic,接觸角θ約大於130度),而且本創作之防沉積表面之接觸角θ甚至可大於等於約150度,而滑動角則小於等於約10度。上述之滑動角係指以針頭於距離防沉積物件10約90mm之高度,進行液滴(如水滴)衝擊試驗使液滴滴落在傾斜之防沉積物件10時,可使液滴產生滑動現象之防沉積物件10之傾斜角度。上述之滑動角越小,則代表防沉積物件10之防沉積效果越好。
In the manufacturing method of the anti-sediment component with laser surface treatment of the present invention, firstly, as shown in Figure 2 and (A) of Figure 3, a
在上述之雷射表面處理之步驟中,雷射42照射主體結構20之初始表面22a(意即,以雷射42使主體結構20生成微結構27)之能量密度之範圍從約0.01W/cm2至約110W/cm2之任意數值或區間,藉以形成複數個微結構27於主體結構20上,其中這些微結構27較佳為具有彼此獨立之山峰,藉此在後續以氟素鍍膜層30共形(conformal)覆蓋主體結構20之微結構27之表面時,其所形成之防沉積表面22c仍保留微結構27之形貌,故上述之共形亦可稱之為保形(maintains shape)。其中,雷射42之掃描速度之範圍為從50mm/s至100mm/s之任意數值或區間。以雷射產生器40可產生複數道沿著Y軸方向間隔分布之雷射42為例,上述之掃描速度係例如為雷射42於X軸方向之移動速度。雷射42之掃描頻率之範圍為從10kHz至40kHz之任意數值或區間,雷射42之脈衝寬度之範圍為從20ns至200ns之任意數值或區間,雷射42之雷射掃描間距之範圍為從10μm至200μm之任意
數值(例如,10μm、20μm、30μm、40μm、50μm、80μm、100μm、200μm)或區間,雷射42之掃描次數可為1次或多次。其中,雷射42之功率之範圍為從10瓦至100瓦,且例如為10瓦、15瓦、20瓦、...,依此類推,雷射42之波長之範圍從380nm至1400nm,且例如為380nm至420nm、445nm至473nm、532nm、633nm、785nm至1064nm。本創作所屬技術領域中具有通常知識者依據本創作之前揭內容,可從上述之數據範圍中挑選合適參數並進行搭配組合,以獲得其所需要之接觸角,其中本創作之接觸角之範圍可從約99度至約150.2度。
In the above-mentioned laser surface treatment step, the energy density of the
本創作之另一項特色在於氟素鍍膜層30係覆蓋於主體結構20之雷射處理表面22b之複數個微結構27上,藉以形成防沉積表面22c於主體結構20上,亦即利用氟素鍍膜層30作為主體結構20之防沉積表面22c。本創作之又一特色在於主體結構20之初始表面22a與雷射處理表面22b為親水性表面,雷射處理表面22b之親水性高於初始表面22a之親水性,且防沉積表面22c為疏水性表面,藉以使得防沉積表面22c相較於主體結構20之初始表面22a及雷射處理表面22b對製程物質具有較高之接觸角。以主體結構20為不鏽鋼為例,例如市售各類型之304不鏽鋼板材,主體結構20之初始表面22a為親水性(Hydrophilic,接觸角約為80~86度),經過雷射表面處理之步驟之後,主體結構20之雷射處理表面22b之親水性將提升為超親水性(Super hydrophilic,接觸角約小於20度)。然而,經過覆蓋氟素鍍膜層30之後,其所形成之防沉積表面22c將具有超疏水性(Super hydrophobic,接觸角約大於130度)。本創作之防沉積表面之接觸角之範圍為約99度至約150.2度,亦即接觸角可大於等於150度,而滑動角則小於等於10度。
Another feature of this creation is that the
本創作之防沉積物件10係應用於真空環境中,如圖4所示,且於真空環境中接觸製程設備100進行製程時所使用或排放之製程物質110,其中上
述之真空環境並不侷限於特定真空度,其可依據製程設備100之需求而定。氟素鍍膜層30覆蓋於主體結構20之雷射處理表面22b之複數個微結構27上,以形成防沉積表面22c。本創作之防沉積物件10之防沉積表面22c可例如位於主體結構20之全部或部位24上。其中,此部位24可為通常較常發生製程物質沉積之位置,例如彎曲處或傾斜處等非平面處,且例如但不限於內壁表面或外壁表面。因此,在本創作中,上述之部位24例如為主體結構20之彎曲部位(如圖5所示)或傾斜部位(如圖6所示),惟本創作不限於此,本創作之氟素鍍膜層30亦可覆蓋於主體結構20之平面部位(如圖7所示)上。除此之外,本創作之防沉積物件10之主體結構20例如為製程設備100之出口管(如圖5至圖7所示)或製程設備100之週邊設備(如真空抽氣幫浦)之管件(如圖5至圖7所示)或部件(如圖8之具有螺旋導流槽26之Holweck幫浦零件所示)。上述雖列舉多種防沉積物件10之主體結構20之態樣,惟本創作不限於此,所有可應用於真空環境中之物件之態樣均屬於本創作請求保護之範圍。舉例而言,本創作之防沉積物件10及其主體結構20亦可例如為真空幫浦之腔體或零組件等,例如渦輪分子式真空幫浦(TMP)之轉子葉片及/或定子葉片。舉例而言,本創作之防沉積物件10及其主體結構20亦可例如為閥門結構之腔體或零組件等。簡言之,本創作可選擇性對於所有可能會接觸製程物質110之物件之初始表面22a進行雷射表面處理之步驟以形成複數個微結構27,且將氟素鍍膜層30覆蓋於複數個微結構27上,藉以形成防沉積表面22c。甚至,本創作之防沉積物件10之主體結構20之態樣亦可例如為製程室之腔壁或組件等。
The
本創作之經雷射表面處理之防沉積物件之一特色在於藉由氟素鍍膜層30覆蓋主體結構20之微結構27上,因此氟素鍍膜層30可代替主體結構20之初始表面22a或雷射處理表面22b接觸製程設備100進行製程時所使用或排放
之製程物質110。其中,氟素鍍膜層30可例如藉由塗佈方式覆蓋主體結構20之雷射處理表面22b,其中塗佈方式例如但不限於噴塗、刷塗、浸塗或擦塗等方式。其中,本創作可例如直接將形成有微結構27之主體結構20浸泡於液態(流體狀態)之氟素鍍膜層30中,藉以將氟素鍍膜層30塗佈於主體結構20之雷射處理表面22b之微結構27上,其中浸泡的時間例如為約1分鐘,但不限於此,只要可使得氟素鍍膜層30覆蓋微結構27即屬於本創作請求保護之範圍。本創作藉由在主體結構20上形成具有凸肋狀之粗糙結構(即,微結構27)且藉由增加主體結構20之親水性,可增加氟素鍍膜層30與主體結構20之雷射處理表面22b之間之密著性。以主體結構20為不鏽鋼為例,不鏽鋼之初始表面22a為親水性,且經過雷射表面處理後,不鏽鋼之雷射處理表面22b之親水性將更為提升。意即,初始表面22a若為親水性,則雷射處理表面22b會更為親水,初始表面22a若為疏水性,則雷射處理表面22b會更為疏水。本創作可增加氟素鍍膜層30與主體結構20之雷射處理表面22b之間之密著性。其中,本創作亦可在對主體結構20之初始表面22a進行雷射表面處理之前,先對初始表面22a進行拋光處理,使其成為一拋光表面,藉此可提升後續行程之雷射處理表面22b之均勻性與一致性,故可進一步提升接觸角。上述雖以拋光處理舉例,但本創作並不侷限於此,只要可均勻化或平坦化主體結構20之初始表面22a即屬於本創作請求保護之範圍,故此處不另贅述。
One of the features of the laser surface-treated anti-sediment component of this invention is that the
本創作在將液態(流體狀態)之氟素鍍膜層30塗佈主體結構20之雷射處理表面22b上之後,可選擇性於室溫下約1至7天時間使其進行自縮合反應或於攝氏40度至攝氏60度之溫度下約1分鐘至24小時使其進行自縮合反應,亦即使得氟素鍍膜層30固化於主體結構20之雷射處理表面22b上,而形成固化狀態之氟素鍍膜層30。其中,本創作係例如以將具有微結構27之主體結構20浸泡於液態(流
體狀態)之氟素鍍膜層30中約1分鐘,取出後在攝氏50度之溫度下烘烤約1分鐘至24小時使其進行自縮合反應。氟素鍍膜層30之厚度範圍可例如從0.1μm至30μm,且可為此範圍當中任意數值區間或上、下限端點值,例如從1μm至10μm。氟素鍍膜層30之物性與化性等特性優於主體結構20之初始表面22a之原有物性與化性。舉例而言,在真空環境中,氟素鍍膜層30(即,防沉積表面22c)相較於主體結構20之初始表面22a及雷射處理表面22b對製程物質110具有較高之接觸角θ,亦即氟素鍍膜層30與製程物質110之間之接觸角(範圍為約99度至約150.2度,且可為此範圍當中任意數值區間或上、下限端點值,如150度)高於初始表面22a與製程物質110之間之接觸角(範圍約為89至95度)。本創作藉由在真空部件上塗佈高接觸角之氟素鍍膜層30可防止真空部件產生沉積現象,且可達到自清潔及易清潔之效果。氟素鍍膜層30相較於主體結構20之初始表面22a及雷射處理表面22b具有近似或較高之硬度,亦即氟素鍍膜層30之硬度(範圍約從8H至9H,且可為此範圍當中任意數值區間或上、下限端點值)接近、相同或高於主體結構20之初始表面22a之硬度(範圍約為4H至6.5H)。本創作藉由在真空部件上塗佈高硬度之氟素鍍膜層30可防止真空部件受到微粒等製程物質撞擊而刮傷。氟素鍍膜層30與主體結構20之雷射處理表面22b之間之附著力(百格試驗(Cross-Cut test)之範圍約為4B至5B)高於製程物質110施加在氟素鍍膜層30之接觸力(如,製程物質110排放時撞擊氟素鍍膜層30之外力或吸附力),藉此本創作之氟素鍍膜層30對於主體結構20具有良好之密著性,可避免製程中產生剝離現象。氟素鍍膜層30相較於主體結構20之初始表面22a具有較高之抗酸腐蝕性與抗電漿蝕刻性,藉此本創作之氟素鍍膜層30可保護真空部件防止受到酸蝕及自由基侵蝕。氟素鍍膜層30例如為覆蓋或甚至共形覆蓋於主體結構20之粗糙表面(即,具有微結構27之雷
射處理表面22b)上。此外,本創作之氟素鍍膜層30可承受相當高之溫度,且其工作溫度範圍相當廣,耐受溫度可高達約攝氏600度。氟素鍍膜層30之工作溫度範圍例如為小於或等於約攝氏600度,較佳例如約從攝氏260度至攝氏600度,且可為小於或攝氏600度之任意數值區間或上、下限端點值。反觀,傳統之撥水塗層或抗污塗層通常不能承受高溫,例如傳統之鐵氟龍之使用溫度低於攝氏260度。更何況,傳統之撥水塗層或抗污塗層之硬度僅約為1H至3H,例如傳統之鐵氟龍之硬度為1H至2H。由此可知,傳統之撥水層或抗污層無法承受製程設備100進行半導體製程時之高溫、高真空、高腐蝕性、高衝擊性及高沉積性環境。換言之,本創作之防沉積物件10藉由結合氟素鍍膜層30與主體結構20,可節省頻繁維修的資金和人力。
In this invention, after the liquid (fluid state)
本創作之氟素鍍膜層30之成分可例如為由氟碳化合物(Fluoro-carbons)約佔0.01~20%wt、烷氧基矽烷類約佔5~50wt、催化添加物約佔0.01%~20%wt及溶劑約佔10~90%wt所組成。氟碳化合物例如為含有1-20個碳原子之含氟單體或聚合物。舉例而言,氟碳化合物例如為含有約3至約20個碳原子和至少一個末端三氟甲基的含氟單體。舉例而言,氟碳化合物例如為選自於由全氟烷(PFAS)、氟氯烴(CFC)、半氟烷(HFC)、氟聚合物(PTFE)及氫氟氯烴(HCFC)所組成之族群。烷氧基矽烷類係例如選自於由烷氧基矽烷寡聚體(Alkoxylsilane Oligomer)、烷氧基矽烷化合物(Alkoxylsilane compound)、烷氧基矽烷高分子(Alkoxylsilane polymer)、烷氧基矽氧烷寡聚體(Alkoxylsiloxane Oligomer)、烷氧基矽氧烷化合物(Alkoxylsiloxane compound)、烷氧基矽氧烷高分子(Alkoxylsiloxane polymer)、烷氧基矽氮烷寡聚體(Alkoxylaminosiloxane Oligomer)、烷氧基矽氮烷化合物(Alkoxylaminosiloxane compound)及烷氧基矽氮
烷高分子(Alkoxylaminosiloxane polymer)所組成之族群。催化添加物係選自於由白金、鈦、錫、鋅、鋁、銀、鈣、鎂、鉀、鈉、鎳、鉻、鉬、釩、銅、鐵、鈷、鍺、鉿、鑭、鉛、釕、鉭、鎢、鋯之金屬、金屬氧化物、磷酸鹽及羧酸鹽所組成之族群。舉例而言,催化添加物例如為選自於由氧化矽、氧化鋁、氧化鈦、氧化鐵、氧化鎂、氧化鉬、氧化鈣及氯化鈣所組成之族群,且例如為奈米尺寸。惟本創作不限於此。微奈米尺寸甚至微米尺寸之催化添加物或成分均屬於本創作請求保護之範圍。溶劑例如為乙醇、丙醇或丁醇等醇類。惟,本創作不限於此,本創作之溶劑可選自於由醇類、酮類、酯類、氟醇類、氟醚和醚類所組成之族群。本創作之烷氧基矽烷類中具有反應官能基,反應官能基係於室溫下1至7天時間(例如7天)進行自縮合反應或於攝氏40至60度溫度下1至24小時(例如24小時)進行自縮合反應。其中,上述之反應官能基例如為矽氫化反應性官能基(如烯基、丙烯醯基、鍵結於矽原子上之氫原子)、縮合反應性官能基(如羥基、烷氧基、醯氧基)或過氧化物硬化反應性官能基(如烷基、烯基、丙烯醯基、羥基)。除此之外,在可行實施態樣中,本創作之氟素鍍膜層30之成分亦可例如為由氟素、奈米鈦、矽及矽彈性體組成之有機/無機高分子共聚物。由於本創作所屬技術領域中具有通常知識者,基於本創作前述內容,應當知道如何選擇與調製,以具有本創作之功效之氟素鍍膜層30之防沉積物件10,故此處不另贅述。
The composition of the
本創作之表面硬度測試方法是以硬度鉛筆測試氟素鍍膜層30之表面硬度。舉例而言,將硬度鉛筆(三菱標準鉛筆)以45度角裝載於固定荷重之台車上,再以手推動台車滑過防沉積物件10之氟素鍍膜層30之表面,以確認受鉛筆刮傷時之表面硬度。在本創作之防沉積物件10中,氟素鍍膜層30覆蓋於主體
結構20之雷射處理表面22b上之表面硬度試驗結果均在8H荷重1Kg至9H荷重500g之間。
The surface hardness testing method of this invention is to use a hardness pencil to test the surface hardness of the
本創作之百格試驗(Cross-Cut test)依據ASTM D3359方法B(交叉切法)測試,其測試方法是用百格刀在測試樣本表面劃10×10個(100個)1mm×1mm小格線,每一條劃線應深及防沉積物件10之氟素鍍膜層30的底層;用毛刷將測試區域的碎片刷乾淨;用標準膠帶(3M 600號膠帶)或等同效力的膠帶粘住被測試小格線上,並用橡皮擦用力擦拭膠帶,以加大膠帶與被測區域的接觸面積及力度,用手抓住膠帶一端,在1.5分正負30秒內,以180度夾角迅速撕起膠帶,並觀察氟素鍍膜層30剝落狀態。在本創作之防沉積物件10中,本創作之氟素鍍膜層30披覆於主體結構20之雷射處理表面22b之百格試驗結果均在5B(切口邊緣完全光滑,格子邊緣沒有任何剝落)至4B(切口的相交處有小片剝落,劃格區內實際破損5%)之間。由此可知,本創作之氟素鍍膜層30對於主體結構20之初始表面22a及雷射處理表面22b之附著力(密著性)相當高。
The Cross-Cut test of this creation is tested according to ASTM D3359 method B (cross-cut method). The test method is to use a cross-cut knife to draw 10×10 (100) 1mm×1mm small grids on the surface of the test sample. Each scribed line should be as deep as the bottom of the
本創作之耐酸蝕檢測實驗係使用5%HCl(鹽酸)0.05ML,滴於測試樣品上,靜置24小時,等待其HCl溶液揮發,揮發過程中HCl區域濃度會上升,並會增加擴散腐蝕效果。觀察24小時之後,腐蝕擴散面積。經測試結果,未塗佈氟素鍍膜層30之主體結構20之雷射處理表面22b之腐蝕面積(mm2)約為45.13mm,然而有塗佈氟素鍍膜層30之主體結構20之雷射處理表面22b之腐蝕面積(mm2)僅約為19.4mm。
The acid corrosion resistance testing experiment of this creation uses 0.05ML of 5% HCl (hydrochloric acid), drops it on the test sample, and leaves it for 24 hours, waiting for the HCl solution to evaporate. During the evaporation process, the concentration of the HCl area will increase, and the diffusion corrosion effect will be increased. . Observe the corrosion spread area after 24 hours. According to the test results, the corrosion area (mm 2 ) of the laser-treated
除此之外,本創作亦經過電漿蝕刻測試,其結果顯示在相同蝕刻條件(CHF3:Ar為1:1,60分鐘,其蝕刻氧化物之速率為750nm/30min)的情況下,本創作之氟素鍍膜層30確實比主體結構20之雷射處理表面22b(陽極氧化鋁材質)
具有良好之抗電漿蝕刻的能力。就熱穩定性測試(Thermogravimetric Analyzer,TGA測試)而言,在升溫速率為攝氏5度/分鐘及測試氣氛為N2之測試環境下,本創作之氟素鍍膜層30之重量在測試溫度範圍(攝氏600度)內,均呈現穩定緩慢下降,並沒有突然的重量變化發生,顯示本創作之防沉積物件10之氟素鍍膜層30沒有裂解(cracking)發生。
In addition, this creation has also been tested by plasma etching, and the results show that under the same etching conditions (CHF 3 : Ar is 1:1, 60 minutes, the etching rate of the oxide is 750nm/30min), the The creative
製程設備100所進行之製程例如為半導體製程。舉例而言,製程設備100所進行之製程為原子層沉積(ALD)製程,製程物質為四氯化鈦(TiCl4),其中防沉積物件10之主體結構20例如為流體輸送管,但不限於此。舉例而言,製程設備100所進行之製程為有機金屬化學氣相沉積(MOCVD)製程,製程物質為製程氣體或製程廢氣,其中防沉積物件10之主體結構20例如為真空抽氣幫浦之出口管,但不限於此。舉例而言,製程設備100所進行之製程為鋁墊(Al-pad)製程,製程物質為製程氣體反應物或製程廢氣,如選自於由N2、O2、Ar、SF6、He、HBr、CF4、CH4、Cl2、BCl3及CHF3所組成之族群,其中防沉積物件10之主體結構20例如為具有導流螺旋溝槽之幫浦零件及出口管,但不限於此。本創作之經雷射表面處理之防沉積物件經過實際測試,在上述之製程中均有良好的效果,例如在鋁墊(Al-pad)製程中,本創作之防沉積物件可延長約20%的維修週期,故可可減少頻繁維修的資金和人力。
The process performed by the
綜上所述,本創作之經雷射表面處理之防沉積物件,具有以下優點: To sum up, the anti-sediment component with laser surface treatment of this invention has the following advantages:
(1)藉由在真空部件之主體結構之初始表面上進行雷射表面處理之步驟,可形成具有複數個微結構之雷射處理表面,藉此可增加親水性及粗糙度,有助於後續使氟素鍍膜層覆蓋在微結構上。 (1) By performing laser surface treatment on the initial surface of the main structure of the vacuum component, a laser-treated surface with a plurality of microstructures can be formed, thereby increasing hydrophilicity and roughness, which is helpful for subsequent The fluorine coating layer is covered on the microstructure.
(2)藉由在真空部件之雷射處理表面上塗佈高硬度之氟素鍍膜層作為防沉積表面,可防止真空部件受到微粒等製程物質撞擊而刮傷。 (2) By coating the laser-treated surface of the vacuum component with a high-hardness fluorine coating layer as an anti-deposition surface, the vacuum component can be prevented from being scratched by impact from particles and other process substances.
(3)藉由在真空部件之雷射處理表面上塗佈高接觸角之氟素鍍膜層作為防沉積表面,可防止真空部件產生沉積現象,且可達到自清潔及易清潔之效果。 (3) By coating the laser-treated surface of the vacuum components with a high contact angle fluorine coating layer as an anti-deposition surface, the vacuum components can be prevented from depositing and achieve self-cleaning and easy-to-clean effects.
(4)氟素鍍膜層對於具有雷射處理表面之主體結構具有良好之密著性,可避免在製程中產生剝離現象。 (4) The fluorine coating layer has good adhesion to the main structure with a laser-treated surface, which can avoid peeling off during the manufacturing process.
(5)藉由提供以氟素鍍膜層作為防沉積表面之防沉積物件,可節省頻繁維修的資金和人力。 (5) By providing anti-deposition components using a fluorine coating layer as an anti-deposition surface, money and manpower for frequent maintenance can be saved.
以上所述僅為舉例性,而非為限制性者。任何未脫離本創作之精神與範疇,而對其進行之等效修改或變更,均應包含於後附之申請專利範圍中。 The above is only illustrative and not restrictive. Any equivalent modifications or changes that do not depart from the spirit and scope of this creation shall be included in the appended patent application scope.
10:防沉積物件 10: Anti-sediment parts
20:主體結構 20:Main structure
22c:防沉積表面 22c: Anti-deposition surface
27:微結構 27:Microstructure
30:氟素鍍膜層 30: Fluorine coating layer
110:製程物質 110:Process material
θ:接觸角 θ: contact angle
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CN117798504B (en) * | 2023-12-29 | 2024-06-07 | 西南科技大学 | Preparation method of reentrant corner structure with adjustable local wettability |
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