TWM643164U - Gas shower head and plasma processing device - Google Patents

Abstract

This case discloses a gas shower head and a plasma processing device. The gas shower head includes a gas distribution plate with an air inlet surface and a gas outlet surface. The gas distribution plate is a disc-shaped structure with a center. The gas distribution plate includes several annular gas distribution areas; each annular gas distribution area is provided with a plurality of gas through holes penetrating the air inlet surface and the gas outlet surface. The gas through holes at least include a plurality of first gas through holes inclined at a certain angle along the circumferential direction; The area includes a plurality of first gas through holes; the second annular gas distribution area includes a plurality of second gas through holes, and the first annular gas distribution area is arranged around the periphery of the second annular gas distribution area. This case prolongs the residence time of the reaction gas on the wafer surface, improves the use efficiency of the reaction gas, and improves the edge defect of the etching result.

Description

Gas shower head and plasma treatment device

This case involves the field of semiconductor equipment, in particular a gas shower head and a plasma processing device.

During some semiconductor processes, substrates or wafers are processed by substrate processing equipment. For example, substrate processing equipment is used to process substrates, such as semiconductor, glass or polymer substrates, by techniques including etching, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), plasma enhanced atomic layer deposition (PEALD), pulsed layer deposition (PDL), plasma enhanced pulsed layer deposition (PEPDL), resist removal. When performing plasma etching treatment on wafers or substrates in an inductive coupled plasma (ICP) or capacitive coupled plasma (CCP) etching chamber, process gas is allowed to enter the chamber through a shower head disposed in the chamber, and radio frequency vibration electrical energy is applied to the chamber to excite the gas into plasma. The gas reacts with the surface of the substrate or wafer exposed to the plasma to form a film of components derived from the process gas on the wafer or to clean the substrate or wafer.

As shown in Figure 1, it is a commonly used structure of a gas shower head installed in the above-mentioned chamber at present. The gas shower head includes a gas distribution plate 10 having an air inlet surface and an air outlet surface. Several air holes 20 are distributed on the gas distribution plate 10. Each air hole 20 is perpendicular to the air inlet surface and the air outlet surface, and can be called a vertical air hole. Therefore, the gas shower head shown in Figure 1 is applied to the plasma treatment After the installation, as shown in FIG. 2 , the plasma processing apparatus includes: a vacuum reaction chamber 30 , and a base 60 is arranged in the vacuum reaction chamber 30 for supporting the substrate 50 to be processed.

The gas shower head 11 is arranged opposite to the base 60, and is used to provide reaction gas into the vacuum reaction chamber 30; the plasma confinement ring 70, which is sleeved on the outer peripheral side of the base 60, and a radio frequency source power source (not shown in FIG. 2 ), are used to dissociate the reaction gas to generate plasma 40.

A radio frequency bias power source (not shown in FIG. 2 ) is applied to the susceptor 60 for driving the charged particles in the plasma 40 to process the substrate 50 . A vacuum pump located below the plasma confinement ring 70 , the reaction gas ejected from the gas shower plate 11 is sucked away by the vacuum pump through the plasma confinement ring 70 and discharged to the outside of the vacuum reaction chamber 30 . Since the reaction gas ejected from the gas shower plate 11 is vertically directed towards the substrate 50, the reaction gas will be drawn out to the outside of the vacuum reaction chamber 30 after a short period of retention. Specifically, as shown in the streamline composed of arrows in FIG. In addition, the angular airflow asymmetry caused by the air inlet and other asymmetrical cavity components during vertical air intake, that is, the etching results (CD, etch rate, etc.) caused by the asymmetry of the airflow distribution along the circumferential direction.

The purpose of this case is to provide a gas shower head and a plasma processing device to solve the existing shortcoming that the spraying direction of the gas shower plate is perpendicular to the surface of the substrate, causing the jetted reaction gas to be ejected from the gas shower plate and being drawn away from the plasma confinement ring 70. , etch rate, etc.) edge defects.

In order to solve the above problems, this case is realized through the following technical solutions:

A gas shower head, the gas shower head includes a gas distribution plate with an air inlet surface and a gas outlet surface, the gas distribution plate is a disc-shaped structure with a center, including a central axis passing through the center of the circle and perpendicular to the gas distribution plate, the gas distribution plate includes several annular gas distribution areas with the center of the circle as the center; each of the annular gas distribution areas is provided with a plurality of gas through holes penetrating through the air inlet surface and the gas outlet surface, and the gas through holes at least include a plurality of first gas through holes inclined at a certain angle along the circumferential direction; The through holes also include a plurality of second gas through holes, the second gas through holes are parallel to the central axis; the first annular gas distribution area includes a plurality of the first gas through holes; the second annular gas distribution area includes a plurality of the second gas through holes, and the first annular gas distribution area is arranged around the periphery of the second annular gas distribution area.

Optionally, the gas through holes also include several third gas through holes, and the distance from the opening center of the third gas through holes on the gas inlet surface of the gas distribution plate to the central axis is greater than the distance from the opening center of the third gas through holes on the gas outlet surface of the gas distribution plate to the central axis.

Optionally, the distance from the opening center of the first gas through hole on the gas distribution plate inlet surface to the central axis is equal to the distance from the opening center on the gas outlet surface to the central axis; the distance from the opening center of the second gas through hole on the gas distribution plate inlet surface to the central axis is equal to the distance from the opening center on the gas outlet surface to the central axis.

Optionally, the gas passage holes in the same annular gas distribution area have the same or different inclination directions and angles.

Optionally, the first annular gas distribution area includes several third gas through holes and/or first gas through holes.

Optionally, the first annular gas distribution area includes several second gas through holes, the distance from the center of the opening of the first gas through hole and the second gas through hole on the inlet surface to the central axis is equal, and the first gas through holes and the second gas through holes are alternately arranged at intervals.

Optionally, the first annular gas distribution area includes several third gas through holes, the distance from the opening center of the third gas through hole on the air inlet surface to the central axis is equal to that of the first gas through hole, and the third gas through holes and the first gas through holes are alternately arranged at intervals.

Optionally, the third gas passage hole forms a third annular gas distribution area, and the third annular gas distribution area is arranged around the periphery of the first annular gas distribution area, or, the third annular gas distribution area is arranged around the periphery of the first annular gas distribution area.

Optionally, it also includes: an annular groove, the annular groove is arranged on the gas outlet surface of the gas distribution plate, and the annular groove is a continuous ring structure or a plurality of discontinuous arc structures; at least one gas outlet of the gas through hole in the annular gas distribution area is located in the annular groove.

Optionally, the gas outlets of the gas passage holes in the first annular gas distribution area are located in the annular groove.

Optionally, the gas outlets of the gas passage holes in the third annular gas distribution area are located in the annular groove.

Optionally, the groove depth of the annular groove is less than half the thickness of the gas distribution plate.

Optionally, the groove width of the annular groove is less than or equal to three times the diameter of the gas through hole.

Optionally, a back plate is also included, the back plate is opposite to the air inlet surface of the gas distribution plate, and several heat conduction layers are arranged between the back plate and the gas distribution plate.

On the other hand, the present application also provides a plasma device, including a vacuum reaction chamber, in which a base is arranged to support the substrate to be processed; a gas shower head, arranged opposite to the base, is used to supply reaction gas into the vacuum reaction chamber; a radio frequency source power source is used to dissociate the reaction gas to generate plasma; a radio frequency bias power source is applied to the base, and is used to drive charged particles in the plasma to process the substrate; the gas shower head has the characteristics as described above.

This case has at least one of the following advantages:

The gas shower head provided in this case includes a plurality of the first gas through holes through the first annular gas distribution area; the second annular gas distribution area includes a plurality of the second gas through holes, and the first annular gas distribution area is arranged around the periphery of the second annular gas distribution area, that is, the outermost gas through holes can be inclined in the circumferential direction, so that the sprayed gas flow (reaction gas) is rotated to form a spiral-like swirling gas flow, and the swirling gas flow prolongs the gas path of the reaction gas between the gas spray plate and the plasma confinement ring, thus prolonging the flow of the reaction gas on the wafer ( The residence time on the surface of the substrate) improves the use efficiency of the reaction gas.

The swirling air flow can also make the reaction gas flow in the circumferential direction, and improve the asymmetry of the angular air flow caused by the air suction port and other asymmetrical cavity parts during vertical air intake. In this way, the reactant gas is distributed more uniformly in the angular direction, thereby improving the side edge defect of the etching result caused by the gas flow distribution.

The third gas through hole provided in this application forms a third annular gas distribution area, and the third annular gas distribution area is arranged around the periphery of the first annular gas distribution area; or, the first annular gas distribution area is arranged around the periphery of the third annular gas distribution area. The setting of the third gas through hole can generate a pulling force pointing to the center of the gas flow direction, so as to prevent the peripheral reaction gas from rapidly diffusing outward and being discharged. Thus, the residence time of the reaction gas on the surface of the wafer (substrate) is further prolonged, and the use efficiency of the reaction gas is improved.

The annular groove provided in this case solves the problem that because the pore opening is exposed to the plasma environment, the pore opening will become larger and the shape will change due to the plasma erosion for a long time, which may affect the direction of the gas flow, resulting in shortening the residence time of the reaction gas and affecting the etching result. During plasma etching, the plasma mainly erodes the opening of the annular groove, thereby protecting the opening of the gas through hole to ensure that the gas flow direction does not change as the shower head is eroded, thereby increasing the life of the gas shower head and improving the stability of the control of the gas flow field.

10: Gas distribution plate

11: Gas sprinkler head

100: gas distribution plate

101: Annular groove

20: stomata

201: the first gas through hole

202: Second gas through hole

203: the first gas through hole

204: Second gas through hole

205: the first gas through hole

206: Second gas through hole

207: The first gas through hole

208: The third gas through hole

209: Second gas through hole

30: Vacuum reaction chamber

300: vacuum reaction chamber

40:Plasma

400:Plasma

50: Substrate

500: Substrate

60: base

600: base

70: Plasma confinement ring

700: Plasma confinement ring

Fig. 1 is a schematic structural diagram of a gas shower head in the prior art; Fig. 2 is a schematic diagram of the reaction gas path sprayed by a gas shower head in the prior art; Fig. 3 is a schematic structural diagram of a gas shower head provided by an embodiment of this case; Fig. 4 is a schematic cross-sectional structure diagram of a gas shower head as shown in Fig. 3 provided by an embodiment of this case; Fig. 5 is a schematic structural diagram of a gas shower head provided by another embodiment of this case; Figure 8 is a schematic structural view of a gas shower head provided by another embodiment of the present case; Figure 8A is a schematic top view of the gas shower head provided by the first embodiment of the present case; Figure 8B is a schematic bottom view of the gas shower head provided by the first embodiment of the present case; Figure 9 is a schematic structural view of the plasma processing device provided by the first embodiment of the present case.

A gas shower head and a plasma processing device proposed in this application will be further described in detail below with reference to the accompanying drawings and specific embodiments. According to the following description, the advantages and characteristics of this case will be more clear. It should be noted that the drawings are in a very simplified form and use inaccurate scales, which are only used to facilitate and clearly illustrate the purpose of the implementation of the present case. In order to make the object, features and advantages of this case more obvious and understandable, please refer to the accompanying drawings. It should be noted that the structures, proportions, sizes, etc. shown in the drawings attached to this specification are only used to match the content disclosed in the specification, for those who are familiar with this technology to understand and read, and are not used to limit the conditions for the implementation of this case, so they have no technical substantive significance.

Embodiment one

As shown in FIG. 3 , the present embodiment provides a gas shower head. The gas shower head includes a gas distribution plate 100 having an air inlet surface and a gas outlet surface. The gas distribution plate 100 is a disc-shaped structure with a center, and includes a central axis passing through the center of the circle and perpendicular to the gas distribution plate 100. The gas distribution plate 100 includes several annular gas distribution areas with the center of the circle as the center.

Each of the annular gas distribution areas is provided with a plurality of gas through holes penetrating the inlet surface and the gas outlet surface. The gas through holes at least include a plurality of first gas through holes 201 inclined at a certain angle along the circumferential direction;

In this embodiment, the annular gas distribution area is roughly divided into two, denoted as a first annular gas distribution area and a second annular gas distribution area; the first annular gas distribution area includes a plurality of first gas through holes 201 .

The second annular gas distribution area includes a plurality of second gas through holes 202, and the first annular gas distribution area is arranged around the periphery of the second annular gas distribution area.

As shown in Figure 4, the distance from the center of the opening on the gas distribution plate 100 inlet surface of the first gas through hole 201 to the central axis is equal to the distance from the center of the opening on the gas outlet surface to the central axis, that is, the inclination direction of the first gas through hole 201 is along the circumferential direction;

In this embodiment, in order to facilitate the processing and manufacture of the gas shower head, the gas through holes are arranged on the gas distribution plate 100 in circles with different diameters around the center of the gas distribution plate 100, and at least one circle of first gas through holes 201 is set in the first annular gas distribution area. Several circles of second gas through holes 202 are arranged in the second annular gas distribution area, and an annular isolation area is arranged between two adjacent annular gas distribution areas, and no gas through holes are arranged on the annular isolation area. In this embodiment, the annular gas distribution area (the first annular gas distribution area or the second annular gas distribution area) and the annular isolation area are radially arranged alternately.

The gas shower head provided in this embodiment includes a plurality of the first gas through holes through the first annular gas distribution area; the second annular gas distribution area includes a plurality of the second gas through holes, and the first annular gas distribution area is arranged around the periphery of the second annular gas distribution area, that is, the outermost gas through holes can be inclined in the circumferential direction, so that the sprayed air flow (reaction gas) is rotated to form a spiral-like rotating air flow. The residence time on the (substrate) surface improves the use efficiency of the reaction gas. The swirling air flow can also make the reaction gas flow in the circumferential direction, and improve the asymmetry of the air flow distribution at different phase angles caused by the suction port and other asymmetric cavity parts during vertical air intake. In this way, the reactant gas is distributed more uniformly in the angular direction, thereby improving the side edge defect of the etching result caused by the gas flow distribution.

Embodiment two

As shown in FIG. 5 , the difference from the first embodiment above is that there may be two first annular gas distribution areas, and two adjacent first annular gas distribution areas are arranged around the second annular gas distribution area. The inclination directions of the first gas through holes 203 in the two first annular gas distribution areas are the same, and they are all inclined along the circumferential direction. The inclination angles of the first gas through holes 203 in the two first annular gas distribution areas can be the same or different. The distance from the center to the central axis is equal to the distance from the center of the opening on the air outlet surface to the central axis. It can be understood that there may be multiple first annular gas distribution areas, and multiple first annular gas distribution areas are arranged around the periphery of the second annular gas distribution area, or multiple first annular gas distribution areas and the second annular gas distribution area are radially spaced apart, and the gas distribution area near the edge of the gas distribution plate 100 is the first annular gas distribution area, but this case is not limited thereto. In this embodiment, since two or more of the first annular gas The reaction gas is ejected through the first gas through hole 203 of the first annular gas distribution area, and the gas flow path of the reaction gas in the reaction space between the shower head and the wafer is similar to a spiral, and the spiral gas flow prolongs the gas path of the reaction gas between the gas spray plate and the plasma confinement ring, thereby prolonging the residence time of the reaction gas on the surface of the wafer (substrate) and improving the use efficiency of the reaction gas.

Embodiment three

As shown in FIG. 6 , the difference from the second embodiment above is that the inclination directions of the first gas through holes 205 in the two first annular gas distribution areas are opposite, and the distance from the center of the opening of the first gas through holes 205 on the gas inlet surface of the gas distribution plate 100 to the central axis is equal to the distance from the center of the opening on the gas outlet surface to the central axis; Such a design can form spiral airflows with different directions in each first annular gas distribution area, further adjusting the flow direction of the gas. It can be understood that the first annular gas distribution area can also be multiple, and the plurality of first annular gas distribution areas are arranged around the periphery of the second annular gas distribution area. Among the multiple first annular gas distribution areas, the inclination directions of the first gas through holes 205 in the same first annular gas distribution area are the same, and the inclination directions of the first gas through holes 205 in different first annular gas distribution areas are different. In this embodiment, due to the arrangement of two or more first annular gas distribution areas, the reaction gas is ejected through the first gas through-hole 205 of the first annular gas distribution area, and the gas flow path of the reaction gas in the reaction space between the shower head and the wafer is similar to a spiral shape, and the spiral air flow prolongs the gas path of the reaction gas between the gas spray plate and the plasma confinement ring, thus prolonging the residence time of the reaction gas on the surface of the wafer (substrate) and improving the use efficiency of the reaction gas.

In some other embodiments, the first gas through holes can be inclined along the circumferential direction of the gas distribution plate, and can also have a component in the radial direction at the same time, that is, the first gas through holes are oriented The tendency of the inclination of the central axis O-O'. The purpose of this design is that the reaction gas flowing out of the first gas passage hole will flow toward the central region, and at the same time, generate a pulling force toward the center for the gas flow in other annular gas distribution regions, so as to prolong the residence time of the reaction gas and plasma on the substrate surface.

Embodiment Four

As shown in FIG. 7 , based on the first to third embodiments above, in this embodiment, the gas through holes also include several third gas through holes 208, the third gas through holes 208 form a third annular gas distribution area, the third annular gas distribution area is located between the first annular gas distribution area (the number 207 in FIG. The distance from the opening center of the third gas through hole 208 on the gas distribution plate 100 inlet surface to the central axis O-O’ is greater than the distance from the opening center of the same third gas through hole 208 on the gas distribution plate 100 gas outlet surface to the central axis O-O’. It can be seen from this that the arrangement of the third gas through hole 208 can generate a pulling force pointing to the center of the gas flow direction, so as to prevent the peripheral reactant gas from rapidly diffusing outward and being discharged. Thus, the residence time of the reaction gas on the surface of the wafer (substrate) is further prolonged, and the use efficiency of the reaction gas is improved.

In some other embodiments, the third annular gas distribution area is arranged around the periphery of the first annular gas distribution area. When the first annular gas distribution area forms a vortex-shaped gas flow distribution, the third annular gas distribution area further generates a pulling force toward the center of the gas flow direction, which prolongs the residence time of the reaction gas in the reaction chamber and improves the use efficiency of the reaction gas.

In some other embodiments, the third gas through hole 208 can be inclined along the radial direction of the gas distribution plate 100, or can have components in the circumferential direction and the radial direction at the same time, that is, the third gas through hole 208 has a tendency to incline toward the central axis O-O'. The purpose of this design is that the reaction gas flowing out through the third gas passage hole 208 will flow towards the central area, while the other annular The gas flow in the gas distribution area generates a pulling force flowing toward the center, so as to prolong the residence time of the reaction gas and plasma on the surface of the substrate.

In some other embodiments, the gas passage holes in the same annular gas distribution area have the same or different inclination directions and angles.

In the various embodiments described in this case, in order to facilitate the comparison of the distribution of the gas through holes on the gas inlet surface and the gas outlet surface, it is assumed that the gas through holes have the same inclination angle. In actual work, since the distribution of the reaction gas between the upper electrode and the lower electrode has a great relationship with the distribution of the gas through holes on the gas outlet surface, the inclination angle of the gas through holes on the gas distribution plate needs to be set according to actual needs, and can be set to be the same or different.

In some other embodiments, the first annular gas distribution area includes several third gas through holes and first gas through holes. It can be seen that when the first annular gas distribution area includes two kinds of gas through holes, the gas flow path ejected from the first gas through hole is similar to a spiral shape, and the helical air flow prolongs the gas path of the reaction gas between the gas shower plate and the plasma confinement ring, and the reaction gas flowing out of the third gas through hole will flow toward the center area, and at the same time, the gas flow in other annular gas distribution areas will generate a pulling force to flow toward the center direction, so as to prolong the residence time of the reaction gas and plasma on the substrate surface; ) The residence time on the surface improves the use efficiency of the reaction gas.

In some other embodiments, the first annular gas distribution area includes a plurality of the second gas through holes and the first gas through holes, and in the same annular gas distribution area, the distance from the center of the opening of the first gas through holes and the second gas through holes on the air inlet surface to the central axis is equal, and the first gas through holes and the second gas through holes are alternately arranged at intervals.

In some other embodiments, the first annular gas distribution area includes several third gas through holes and first gas through holes, and the third gas through holes in the same annular gas distribution area The distance from the center of the opening of the first gas through hole on the air inlet surface to the central axis is equal, and the third gas through holes and the first gas through holes are alternately arranged at intervals.

In the various embodiments described in this case, in order to compare the distribution of the third gas through holes on the gas inlet surface and the gas outlet surface, it is assumed that the inclination direction of the third gas through holes is toward the center of the circle or away from the center of the circle. In actual work, since the distribution of the reaction gas between the upper electrode and the lower electrode has a great relationship with the distribution of the gas through holes on the gas outlet surface, the inclination direction of the third gas through holes on the gas distribution plate needs to be set according to actual needs, and can be set to any desired direction.

Embodiment five

As shown in FIG. 8 , FIG. 8A and FIG. 8B , the difference from the first to fourth embodiments above is that it also includes: an annular groove 101 disposed on the gas outlet surface of the gas distribution plate 100 ; at least one gas outlet of the gas through hole in the annular gas distribution area is located in the annular groove 101 . For example, the gas outlet of the first gas through hole 201 in the first annular gas distribution area in the first embodiment is located in the annular groove 101 .

Please continue to refer to FIG. 8A and FIG. 8B, the gas outlet of the first gas through hole 201 is located in the annular groove 101, the projection of the air inlet of the first gas through hole 201 on the gas outlet surface is located in the annular groove 101, and there is a distance from the gas outlet of the first gas through hole 201 in the circumferential direction.

The annular groove 101 provided in this embodiment solves the problem that the opening of the air hole is exposed to the plasma environment, and the opening of the air hole becomes larger and the shape changes due to long-term plasma erosion, which may affect the direction of the gas flow and affect the etching result. During plasma etching, the plasma mainly erodes the opening of the annular groove 101, thereby protecting the opening of the gas through hole to ensure that the gas flow direction does not change as the shower head is eroded, thereby increasing the life of the gas shower head and improving the stability of the control of the gas flow field.

In some other embodiments, the gas outlets of the gas passage holes in the third annular gas distribution area are located in the annular groove 101 .

In this embodiment, the depth of the annular groove 101 is less than half the thickness of the gas distribution plate 100 . The groove width of the annular groove 101 is less than or equal to three times the diameter of the gas through hole.

In this embodiment, the gas shower head further includes a back plate, the back plate is opposite to the gas inlet surface of the gas distribution plate 100 , and several heat conduction layers are arranged between the back plate and the gas distribution plate 100 .

In some other embodiments, the annular groove 101 is a continuous ring structure or several discontinuous arc structures.

As shown in FIG. 9 , the present application also provides a plasma device, including a vacuum reaction chamber 300. The vacuum reaction chamber 300 is provided with: a base 600 for supporting the substrate 500 to be processed; a gas shower head 11, arranged opposite to the base 600, for providing reaction gas into the vacuum reaction chamber 300; a radio frequency source power source HF, used to dissociate the reaction gas to generate a plasma 400; a radio frequency bias power source RF, applied to the base 600, for driving charged particles in the plasma 400 The substrate 500 is processed; the gas shower head 11 is the gas shower head described in the above embodiments.

The plasma confinement ring 700 is arranged around the susceptor 600 , and the gas flow (reactive gas) ejected from the gas shower head 11 rotates to form a spiral-like swirling gas flow, which is exhausted to the outside of the vacuum reaction chamber 300 through the plasma confinement ring 700 .

Please continue to refer to FIG. 9, the swirling gas flow prolongs the gas path of the reaction gas between the gas shower plate 11 and the plasma confinement ring 700, thereby prolonging the residence time of the reaction gas on the wafer (substrate) surface and improving the use efficiency of the reaction gas. The swirling air flow can also make the reaction gas flow in the circumferential direction, and improve the asymmetry of the angular air flow caused by the air suction port and other asymmetrical cavity parts during vertical air intake. In this way, the reactant gas is distributed more uniformly in the angular direction, thereby improving the side edge defect of the etching result caused by the gas flow distribution.

It should be noted that in this article, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or Any such actual relationship or order between such entities or operations is implied. Furthermore, the term "comprises", "comprises" or any other variation thereof is intended to cover a non-exclusive inclusion such that a process, method, article or apparatus comprising a set of elements includes not only those elements but also other elements not expressly listed or which are inherent to such process, method, article or apparatus. Without further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of additional identical elements in the process, method, article or apparatus comprising said element.

In the description of this case, it should be understood that the orientations or positional relationships indicated by the terms "center", "height", "thickness", "upper", "lower", "vertical", "horizontal", "top", "bottom", "inner", "outer", "axial", "radial", "circumferential" are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present case and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation or in a specific orientation. bit constructs and manipulations and therefore should not be construed as a limitation on this case. In the description of this case, unless otherwise stated, "plurality" means two or more.

In the description of this case, unless otherwise clearly stipulated and limited, the terms "installation", "connection", "connection" and "fixation" should be understood in a broad sense, for example, it may be a fixed connection or a detachable connection, or integrated; it may be a mechanical connection or an electrical connection; it may be a direct connection or an indirect connection through an intermediary, and it may be an internal connection between two components or an interaction relationship between two components. Those of ordinary skill in the art can understand the specific meanings of the above terms in this case in specific situations.

In this case, unless otherwise expressly specified and limited, a first feature being "on" or "under" a second feature may include that the first and second features are in direct contact, and may also include that the first and second features are not in direct contact but are in contact with another feature between them. Moreover, "above", "above" and "above" the first feature on the second feature include that the first feature is directly above and obliquely above the second feature, or simply means that the first feature is horizontally higher than the second feature. The first feature is "below", "under" the second feature and "Below" includes that the first feature is directly below and obliquely below the second feature, or simply means that the level of the first feature is smaller than that of the second feature.

Although the content of this case has been described in detail through the above preferred embodiments, it should be recognized that the above description should not be considered as a limitation on this case. Various modifications and substitutions will be apparent to those skilled in the art to which this case pertains after reading the foregoing. Therefore, the scope of protection of this case should be limited by the scope of the attached patent application.

100: gas distribution plate

201: the first gas through hole

202: Second gas through hole

Claims (16)

A gas shower head, the gas shower head includes a gas distribution plate with an air inlet surface and a gas outlet surface, the gas distribution plate is a disc-shaped structure with a center, and includes a central axis passing through the center of the circle and perpendicular to the gas distribution plate, wherein the gas distribution plate includes several annular gas distribution areas with the center of the circle as the center; each of the annular gas distribution areas is provided with a plurality of gas through holes penetrating through the air inlet surface and the gas outlet surface, and the gas through holes at least include a plurality of first gas channels inclined at a certain angle along the circumferential direction hole; the gas through hole also includes a plurality of second gas through holes, the second gas through hole is parallel to the central axis; a first annular gas distribution area, including a plurality of the first gas through holes; a second annular gas distribution area, including a plurality of the second gas through holes, the first annular gas distribution area is arranged around the periphery of the second annular gas distribution area. The gas shower head according to claim 1, wherein the gas through holes further include several third gas through holes, and the distance from the opening center of the third gas through holes on the gas inlet surface of the gas distribution plate to the central axis is greater than the distance from the opening center of the third gas through holes on the gas outlet surface of the gas distribution plate to the central axis. The gas shower head according to claim 1, wherein the distance from the center of the opening of the first gas through hole on the inlet surface of the gas distribution plate to the central axis is equal to the distance from the center of the opening on the gas outlet surface to the central axis; the distance from the center of the opening of the second gas through hole on the inlet surface of the gas distribution plate to the central axis is equal to the distance from the center of the opening on the gas outlet surface to the central axis. The gas shower head as claimed in claim 1, wherein the gas through holes in the same annular gas distribution area have the same or different inclination directions and angles. The gas shower head according to claim 2, wherein the first annular gas distribution area includes a plurality of the third gas through holes and/or the second gas through holes. The gas shower head according to claim 1, wherein the first annular gas distribution area includes a plurality of the second gas through holes, the distance from the opening center of the first gas through hole and the second gas through hole on the air inlet surface to the central axis is equal, and the first gas through holes and the second gas through holes are alternately arranged at intervals. The gas shower head according to claim 5, wherein the first annular gas distribution area includes several third gas through holes, the distance from the center of the opening of the third gas through hole on the air inlet surface to the central axis is equal to that of the first gas through hole, and the third gas through holes and the first gas through holes are alternately arranged at intervals. The gas shower head according to claim 2, wherein the third gas passage hole forms a third annular gas distribution area, and the third annular gas distribution area is disposed around the periphery of the first annular gas distribution area. The gas shower head according to claim 2, wherein the third gas through hole forms a third annular gas distribution area, and the first annular gas distribution area is arranged around the periphery of the third annular gas distribution area, or, the third annular gas distribution area is arranged around the periphery of the first annular gas distribution area. The gas shower head according to claim 8 or 9, further comprising: an annular groove, which is arranged on the gas outlet surface of the gas distribution plate, and the annular groove is a continuous ring structure or a plurality of discontinuous arc structures; at least one gas outlet of the gas through hole in the annular gas distribution area is located in the annular groove. The gas shower head as claimed in claim 10, wherein the gas outlet of the gas through hole in the first annular gas distribution area is located in the annular groove. The gas shower head as claimed in claim 10, wherein the gas outlet of the gas through hole in the third annular gas distribution area is located in the annular groove. The gas shower head as claimed in claim 12, wherein the groove depth of the annular groove is less than half the thickness of the gas distribution plate. The gas shower head according to claim 13, wherein the groove width of the annular groove is less than or equal to three times the diameter of the gas through hole. The gas shower head according to claim 1, further comprising a back plate, the back plate is opposite to the gas inlet surface of the gas distribution plate, and several heat conduction layers are arranged between the back plate and the gas distribution plate. A plasma device, comprising a vacuum reaction chamber, wherein: the vacuum reaction chamber is provided with: a base, used to support a substrate to be processed; a gas shower head, arranged opposite to the base, for providing reaction gas into the vacuum reaction chamber; a radio frequency source power source, used to dissociate the reaction gas to generate plasma; a radio frequency bias power source, applied to the base, used to drive charged particles in the plasma to process the substrate; the gas shower head is the gas shower head described in any one of claims 1 to 15.