TWM635417U - High voltage switch integrated circuit - Google Patents
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- TWM635417U TWM635417U TW111208933U TW111208933U TWM635417U TW M635417 U TWM635417 U TW M635417U TW 111208933 U TW111208933 U TW 111208933U TW 111208933 U TW111208933 U TW 111208933U TW M635417 U TWM635417 U TW M635417U
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Abstract
Description
本新型係關於一種集成開關電路,尤指一種高電壓開關集成電路。The present invention relates to an integrated switch circuit, especially a high-voltage switch integrated circuit.
現有技術之高電壓開關集成電路,其主要包括一開關電路、一控制電路以及一開關電路,該開關電路提供一開關控制電源訊號至該控制電路,以使該控制電路可根據該開關控制電源訊號,產生一控制訊號,接著,將該控制訊號傳輸至該開關電路,以控制該開關電路輸出一高電壓訊號。A high-voltage switch integrated circuit in the prior art mainly includes a switch circuit, a control circuit and a switch circuit, the switch circuit provides a switch control power supply signal to the control circuit, so that the control circuit can control the power supply signal according to the switch to generate a control signal, and then transmit the control signal to the switch circuit to control the switch circuit to output a high voltage signal.
然而,上述現有技術中,該控制電路所接收的該開關控制電源訊號須達一門檻值,方才可使該控制電路產生該控制訊號,而欲使該開關控制電源訊號達到該門檻值,則須等待一充能時間,如此一來,若要使該控制電路控制該開關電路輸出該高電壓訊號,將需花費許多時間,而整體控制速率不佳。However, in the above-mentioned prior art, the switch control power signal received by the control circuit must reach a threshold before the control circuit can generate the control signal, and if the switch control power signal reaches the threshold, it must Waiting for a charging time, in this way, if the control circuit controls the switch circuit to output the high voltage signal, it will take a lot of time, and the overall control rate is not good.
因此,現有技術確實有待進一步提供更加改良方案的必要性。Therefore, the prior art really needs to further provide the necessity of a more improved solution.
有鑑於上述現有技術之不足,本新型主要目的在於提供一種高電壓開關集成電路,藉由一能源電路之設置,使得該充能時間能大幅降低,以達到快速控制之目的。In view of the deficiencies of the prior art above, the main purpose of the present invention is to provide a high-voltage switching integrated circuit, by setting an energy circuit, the charging time can be greatly reduced, so as to achieve the purpose of fast control.
為達成上述目的所採取的主要技術手段係令前述高電壓開關集成電路,包括: 一能源電路,接收一光訊號,且將該光訊號轉換成一開關控制電源訊號,並儲存該開關控制電源訊號; 一控制電路,其與該能源電路連接,且接收一第二光訊號,並根據該第二光訊號,以控制輸出該開關控制電源訊號; 一開關電路,其該控制電路連接,且自該控制電路接收該開關控制電源訊號,並根據該開關控制電源訊號決定進行導通或截止;以及 一訊號共通點,其與該能源電路、該控制電路以及該開關電路連接。 The main technical means adopted to achieve the above objectives are the aforementioned high-voltage switch integrated circuits, including: An energy circuit that receives an optical signal, converts the optical signal into a switch control power signal, and stores the switch control power signal; A control circuit, which is connected to the energy circuit, and receives a second light signal, and controls the output of the switch to control the power supply signal according to the second light signal; A switch circuit, which is connected to the control circuit and receives the switch control power signal from the control circuit, and decides whether to turn on or off according to the switch control power signal; and A signal common point, which is connected with the energy circuit, the control circuit and the switch circuit.
透過上述構造,藉由設置該能源電路,使電能可預先被儲存在該能源電路,而降低該充能時間,以達到快速控制開關電路之目的。Through the above structure, by setting the energy circuit, electric energy can be stored in the energy circuit in advance, and the charging time is shortened, so as to achieve the purpose of quickly controlling the switching circuit.
以下係藉由特定的具體實施例說明書本新型之實施方式,熟習此技藝之人士可由本說明書所揭示之內容瞭解本新型之其他優點與功效。本新型也可藉由其他不同的具體實施例加以實施或應用,本說明書中的各項細節亦可基於不同觀點與應用,在不悖離本新型之精神下進行各種修飾與變更。The following describes the implementation of the present invention through specific specific examples, and those skilled in the art can understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied by other different specific embodiments, and various modifications and changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.
關於本新型之高電壓開關集成電路的實施例,如圖1所示,其包括一能源電路10、一控制電路11、一開關電路12以及一訊號共通點GND,該能源電路10與該控制電路11電性連接,接著,該控制電路11與該開關電路12電性連接,該訊號共通點GND分別與該能源電路10、該控制電路11以及該開關電路12電性連接,該訊號共通點GND提供一共接訊號。該能源電路10以及該控制電路11分別接收一光訊號,該能源電路10將該光訊號轉換成一開關控制電源訊號,並儲存該開關控制電源訊號,該控制電路11接收該光訊號,並將該光訊號轉換成一控制訊號,以根據該控制訊號決定是否將該開關控制電源訊號輸出至該開關電路12,接著,當該控制電路11根據該控制訊號決定輸出該開關控制電源訊號至該開關電路12時,該開關電路12透過該控制電路11接收到該開關控制電源訊號,並根據該開關控制電源訊號,以決定是否導通或截止。於本實施例中,該開關控制電源訊號可為一電壓訊號或一電流訊號,該控制電路11可為一推輓輸出(Push-pull output)電路。Regarding the embodiment of the high-voltage switching integrated circuit of the present invention, as shown in Figure 1, it includes an
在本實施例中,如圖2所示,該高電壓開關集成電路更包括一光訊號發射器13,該光訊號發射器13發送該光訊號至該能源電路10以及該控制電路11。在本實施例中,該光訊號發射器13可為一發光二極體。In this embodiment, as shown in FIG. 2 , the high voltage switch integrated circuit further includes a
在本實施例中,如圖3所示,該高電壓開關集成電路更包括一光訊號轉換器14,該光訊號轉換器14與該光訊號發射器13相對設置,以接收光訊號發射器13所發送的該光訊號。當該光訊號轉換器14接收到該光訊號後,將該光訊號轉換成該開關控制電源訊號或該控制訊號。在本實施例中,該光訊號轉換器14可為包括一光電二極體的光電轉換器。In this embodiment, as shown in FIG. 3 , the high-voltage switching integrated circuit further includes an
在本實施例中,請一併參考圖4以及圖5,該光訊號發射器13更包括一第一光訊號發射器130以及一第二光訊號發射器131,且該第一光訊號發射器130的另一端以及該第二光訊號發射器的另一端彼此共接,而該光訊號轉換器14更包括一第一光訊號轉換器140以及一第二光訊號轉換器141,該第一光訊號發射器130與該第一光訊號轉換器140相對設置,且該第二光訊號發射器131與該第二光訊號轉換器141相對設置,該第一光訊號轉換器140從該第一光訊號發射器130接收一第一光訊號,該第二光訊號轉換器141從該第二光訊號發射器接收該第二光訊號,該能源電路10進一步包括一儲能器100,該儲能器100與該第一光訊號轉換器140電性連接。當該第一光訊號轉換器140從該第一光訊號發射器130接收到該第一光訊號,將該第一光訊號轉換成該開關控制電源訊號後,將該開關控制電源訊號傳送至該儲能器100進行儲存。而該控制電路11進一步包括一二極體110以及一對控制開關111、112,該二極體110與該第二光訊號轉換器141電性連接,且該對控制開關111、112分別與該第二光訊號轉換器141電性連接,該對控制開關111、112分別與該儲能器100連接,該對控制開關111、112彼此串接構成一控制開關共接端113,當該控制電路11的該第二光訊號轉換器141接收到該第二光訊號後,將該第二光訊號轉換成該控制訊號,並將該控制訊號傳送至該對控制開關111、112,該對控制開關111、112接收到該控制訊號後,將根據該控制訊號各自導通或截止,以透過該控制開關共接端113輸出該開關控制電源訊號或該共接訊號。在本實施例中,該對控制開關111、112為反相控制,即該控制開關111係導通,則該控制開關112係截止,該對控制開關111、112可為一金屬氧化物半導體場效電晶體(Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET),故,該對控制開關111、112各自包括一控制側以及一訊號傳送側,該第二光訊號轉換器141分別與該對控制開關111、112的控制側電性連接,以接收該控制訊號,決定該對控制開關111、112導通或截止,該控制開關111的該訊號導通側的一端與該儲能器100電性連接,另一端與該控制開關的一端串接構成該控制開關共接端113,該控制開關112的該訊號導通側的另一端與該訊號共通點GND電性連接。在本實施例中,該第一光訊號轉換器140設置在該能源電路10,該第二光訊號轉換器141設置在該控制電路11,例如,該控制開關111可為P通道的MOSFET,該控制開關112可為N通道的MOSFET,將該對控制開關111、112的閘極端(Gate,G)與該第二光訊號轉換器141電性連接,該控制開關111的源極端(Source, S)與該儲能器100,該控制開關112的源極端(Source, S)與該訊號共通點GND電性連接,該對控制開關111、112的汲極端(Drain, D)彼此串接構成該控制開關共接端113。In this embodiment, please refer to FIG. 4 and FIG. 5 together, the
接著,該開關電路12包括一開關控制端120、一開關共接端121、一第一訊號端122以及一第二訊號端123,該開關控制端120與該控制開關共接端113連接,該開關共接端121與該訊號共通點GND連接,接著,當其中之一的該對控制開關111、112因接收該控制訊號而導通時,該儲能器100將該開關控制電源訊號經由該導通的該控制開關111或該控制開關112輸出該開關控制電源訊號至該控制開關共接端113,並將該開關控制電源訊號傳送至該開關控制端120,以控制該第一訊號端122以及該第二訊號端123之間是否導通或截止,詳細來說,當該控制開關111導通且該控制開關112截止時,則將該開關控制電源訊號經由該控制開關共接端113傳送至該開關控制端120,以控制該第一訊號端122以及該第二訊號端123之間進行導通,當該控制開關111截止且該控制開關112導通時,則將該訊號共通點GND的訊號傳送至該開關控制端120,以控制該第一訊號端122以及該第二訊號端123之間進行截止。在本實施例中,該開關電路12可進一步包括一第一開關M
1以及一第二開關M
2,該第一開關M
1以及該第二開關M
2分別接收該開關控制電源訊號以及該訊號共通點GND的訊號,以根據該開關控制電源訊號以及該訊號共通點GND的訊號對應進行導通或截止,以使該第一訊號端122以及該第二訊號端123之間進行導通或截止,該第一開關M
1以及該第二開關M
2係相同控制開關,可為一金屬氧化物半導體場效電晶體(Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET),例如,該第一開關M
1以及該第二開關M
2可為同樣的N通道的MOSFET,將該第一開關M
1以及該第二開關M
2的閘極端(Gate,G)分別與該開關控制端120電性連接,該第一開關M
1以及該第二開關M
2的源極端(Source, S)彼此電性連接且與該開關共接端121電性連接,該第一開關M
1的汲極端(Drain, D)與該第一訊號端122電性連接,該第二開關M
2的汲極端(Drain, D)與該第二訊號端123電性連接。
Next, the
於本實施例中,如圖5所示,該光訊號發射器13更包括一光訊號調變器132,該第一光訊號發射器130以及該第二光訊號發射器131分別與該光訊號調變器132電性連接,該光訊號調變器132與一第一電源輸入端V
1以及一第二電源輸入端V
2電性連接,該光訊號調變器132對該第一光訊號進行調變,以產生一調變訊號至該第二光訊號發射器131,該第二光訊號發射器131根據該調變訊號,產生該第二光訊號。於本實施例中,該光訊號調變器132對該第一光訊號調整訊號輸出週期,以產生該調變訊號,該第二光訊號發射器131根據該調變訊號,產生該第二光訊號。在本實施例中,該第一光訊號可為一固定光源,而該第二光訊號可為一方波光源,當該第二光訊號轉換器141從該第二光訊號發射器131接收到該第二光訊號後,將對該第二光訊號進行解碼,以確認該控制訊號。具體來說,可根據光訊號的不同強度,光訊號的占空比 (duty ratio),或者是光訊號的頻率進行解碼,以確認該控制訊號的一導通訊號或一截止訊號。
In this embodiment, as shown in FIG. 5 , the
綜上所述,藉由該能源電路10之設置,以使電能可先被儲存在該能源電路10中,如此一來,可降低該充能時間,以達到快速控制開關電路12之目的。To sum up, with the arrangement of the
上述實施例僅例示性說明本新型,而非用於限制本新型。任何熟習此項技藝之人士均可在不違背本新型之精神及範疇下,對上述實施例進行修飾與改變。因此,本新型之權利保護範圍,應如後述之申請專利範圍所載。The above-mentioned embodiments are only illustrative examples of the present invention, and are not intended to limit the present invention. Anyone skilled in the art can modify and change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the rights of the present invention should be set forth in the scope of patent application described later.
10:能源電路 100:儲能器 11:控制電路 110:二極體 111:控制開關 112:控制開關 113:控制開關共接端 12:開關電路 120:開關控制端 121:開關共接端 122:第一訊號端 123:第二訊號端 13:光訊號發射器 130:第一光訊號發射器 131:第二光訊號發射器 132:光訊號調變器 14:光訊號轉換器 140:第一光訊號轉換器 141:第二光訊號轉換器 M 1:第一開關 M 2:第二開關 V 1:第一電源輸入端 V 2:第二電源輸入端 GND:訊號共通點 10: energy circuit 100: energy storage device 11: control circuit 110: diode 111: control switch 112: control switch 113: control switch common terminal 12: switch circuit 120: switch control terminal 121: switch common terminal 122: First signal terminal 123: second signal terminal 13: optical signal transmitter 130: first optical signal transmitter 131: second optical signal transmitter 132: optical signal modulator 14: optical signal converter 140: first light Signal converter 141: second optical signal converter M 1 : first switch M 2 : second switch V 1 : first power input terminal V 2 : second power input terminal GND: signal common point
圖1係本新型之實施例的方塊圖; 圖2係本新型之實施例的另一方塊圖; 圖3係本新型之光訊號發射器以及光訊號轉換器的方塊圖; 圖4係本新型之具體實施例的方塊圖;以及 圖5係本新型之光訊號發射器的方塊圖。 Fig. 1 is the block diagram of the embodiment of the present invention; Fig. 2 is another block diagram of the embodiment of the present invention; Fig. 3 is the block diagram of the optical signal transmitter and the optical signal converter of the present invention; Fig. 4 is the block diagram of the specific embodiment of the present invention; And Fig. 5 is a block diagram of the optical signal transmitter of the present invention.
10:能源電路 10:Energy circuit
11:控制電路 11: Control circuit
12:開關電路 12: switch circuit
GND:訊號共通點 GND: Signal common point
Claims (9)
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