TWM634692U - Junction substrate - Google Patents

Abstract

The invention discloses a bonded substrate. The bonding substrate includes a supporting substrate and a single crystal layer. The supporting substrate includes a base, an epitaxial layer and an interface reaction layer. The epitaxial layer is located between the substrate and the interface reaction layer, and the interface reaction layer and the epitaxial layer are bonded to each other. The single crystal layer is connected to the support substrate. The material of the single crystal layer is the same as that of the epitaxial layer, and the single crystal layer is connected to the epitaxial layer through the interface reaction layer.

Description

bonding substrate

The invention relates to a bonding substrate, in particular to a bonding substrate for making components.

At present, semiconductor materials such as gallium nitride and silicon carbide are often used in the production of components such as high-power components, high-frequency components, or light-emitting diodes. In order to be able to mass-produce and reduce manufacturing costs, devices need to be grown on large-size (eg, 8-inch or 12-inch) substrates. Compared with silicon wafers, it is still quite difficult and expensive to manufacture large-sized GaN substrates or SiC substrates. Taking the growth of gallium nitride as an example, currently the gallium nitride epitaxial layer is grown on a large-sized silicon wafer by metal organic chemical vapor deposition (MOCVD), and then components are fabricated on the gallium nitride epitaxial layer.

Due to the lattice mismatch between GaN and Si, it is necessary to form a buffer layer on the Si wafer before depositing the GaN epitaxial layer. However, in the initial stage of forming the buffer layer, amorphous silicon oxide or amorphous silicon nitride is easily formed on the surface of the silicon wafer. The buffer layer formed in the initial stage has poor crystalline quality due to growth on the amorphous material. Accordingly, the buffer layer usually needs to be grown to a specific thickness to ensure that its crystalline quality is sufficient for growing the GaN epitaxial layer. The total thickness of the GaN and the buffer layer formed by the aforementioned method is generally thick (about 8 to 10 microns), which will increase the internal stress between the silicon wafer and the GaN.

In addition, the process temperature for growing gallium nitride by metalorganic chemical vapor deposition is very high, about 1100 ^o C, and the internal stress is generated between the silicon wafer and the buffer layer and the gallium nitride due to the difference in thermal expansion coefficient, resulting in silicon Wafer deformation or warpage. In the subsequent process of forming devices, the available area will be reduced, and the yield rate of devices will be reduced.

The technical problem to be solved by the invention is to provide a bonding substrate which is applied to manufacture components and can reduce the manufacturing cost.

In order to solve the above technical problems, another technical solution adopted in this creation is to provide a bonding substrate, which includes: providing a plurality of single crystal templates; providing a supporting substrate, wherein the supporting substrate includes a base, a bonding layer and an epitaxial layer, the epitaxial layer is located between the substrate and the bonding layer, the epitaxial layer is made of the same material as the plurality of single crystal templates; and bonding the plurality of single crystal templates with The supporting substrate, wherein each of the single crystal templates is connected to the bonding layer, and a plurality of the single crystal templates are spliced together to form a spliced single crystal template, and the bonding layer and the spliced The single crystal template and the epitaxial layer generate an alloy reaction to form an interface reaction layer, and the interface reaction layer is bonded to the spliced single crystal template and the epitaxial layer.

In order to solve the above technical problems, another technical solution adopted in the present invention is to provide a bonding substrate, which includes: a supporting substrate and a single crystal layer. The supporting substrate includes a base, an epitaxial layer and an interface reaction layer. The epitaxial layer is located between the substrate and the interface reaction layer, and the interface reaction layer and the epitaxial layer are bonded to each other. The single crystal layer is connected to the supporting substrate, wherein the material of the single crystal layer is the same as that of the epitaxial layer, and the single crystal layer is connected to the epitaxial layer through the interface reaction layer.

One of the beneficial effects of this creation is that the joint substrate provided by this creation can pass through "the support substrate includes a base, a joint layer and an epitaxial layer, the epitaxial layer is located between the base and the joint layer, and the epitaxial layer and the single The technical solution of using the same material as the crystal template can reduce the manufacturing cost, and can avoid warping and deformation of the bonding substrate when making a large-sized bonding substrate.

In order to further understand the characteristics and technical content of this creation, please refer to the following detailed description and drawings about this creation. However, the provided drawings are only for reference and explanation, and are not used to limit this creation.

The following is an illustration of the implementation of the "bonded substrate" disclosed in this creation through specific specific examples. Those skilled in the art can understand the advantages and effects of this creation from the content disclosed in this specification. This creation can be implemented or applied through other different specific embodiments, and the details in this specification can also be modified and changed based on different viewpoints and applications without departing from the idea of this creation. In addition, the drawings of this creation are only for simple illustration, not according to the actual size of the depiction, prior statement. The following embodiments will further describe the relevant technical content of this creation in detail, but the disclosed content is not intended to limit the protection scope of this creation. In addition, the term "or" used herein may include any one or a combination of more of the associated listed items depending on the actual situation.

[first embodiment]

Referring to FIG. 1 , it is a flowchart of a method for manufacturing a bonded substrate according to a first embodiment of the present invention. Please refer to step S10 in FIG. 1 , in step S10 , a single crystal template is provided. Please refer to FIG. 2 to FIG. 4 to further illustrate the detailed process of providing a single crystal template.

As shown in FIG. 2 , a single crystal template 10 is formed on a growth substrate GS. The growth substrate GS can be selected from a material with a higher degree of lattice matching with the single crystal template 10 to be formed. Furthermore, the lattice mismatch between the material of the growth substrate GS and the single crystal template 10 is less than 0.2%, which enables the single crystal template 10 to have better epitaxial quality. In this creative embodiment, the material of the single crystal template 10 is gallium nitride, and the growth substrate GS may be a sapphire substrate or a silicon carbide substrate.

In one embodiment, the single crystal template 10 may be formed on the growth substrate GS by a hydride vapor phase epitaxy (HVPE). A thicker single crystal template 10 can be formed by using the hydride vapor phase epitaxy method. In this embodiment, the thickness of the single crystal template 10 may range from 50 μm to 1 mm. In addition, the process temperature for manufacturing the GaN single crystal template 10 by using the hydride vapor phase epitaxy method is about 800 ^° C to 900 ^° C. That is to say, compared with the metalorganic chemical vapor deposition method, the process temperature of using the hydride vapor phase epitaxy method to fabricate the GaN single crystal template 10 is lower.

Referring to FIG. 3 and FIG. 4 , the growth substrate GS is separated from the single crystal template 10 . In this embodiment, a laser lift-off process may be performed to separate the single crystal template 10 from the growth substrate GS. As shown in FIGS. 3 and 4 , by focusing the laser light L on the interface between the single crystal template 10 and the growth substrate GS, the single crystal template 10 can be debonded from the growth substrate GS. In one embodiment, the laser lift-off process may be performed by using laser light (wavelength about 248 nm) generated by a krypton fluorine (KrF) excimer laser. Since the single crystal template 10 has sufficient mechanical strength due to its large thickness, the single crystal template 10 can be used as a freestanding substrate after separating the single crystal template 10 from the growth substrate GS.

Please refer to step S11 of FIG. 1 again. In step S11 , a supporting substrate is provided. It should be noted that, in the manufacturing method of this embodiment, step S10 and step S11 can be performed separately. Please refer to FIG. 5 to FIG. 7 to further illustrate the detailed process of providing the supporting substrate.

As shown in FIG. 5 , the buffer layer 21 is formed on a substrate 20 . The material of the base 20 can be selected to be easily made into a large size and low cost material. Since the support substrate 2 may also need to be heated to a high temperature in the subsequent process, the substrate 20 is preferably selected from a material that can withstand high temperatures, which can be a compound semiconductor or a ceramic, such as: silicon carbide (SiC), silicon (Si), nitrogen aluminum oxide (AlN), aluminum oxide (Al ₂ O ₃ ), or gallium oxide (Ga ₂ O ₃ ). In this embodiment, the area of the epitaxial surface of the substrate 20 is the same as the area of the epitaxial surface of the growth substrate GS, but the invention is not limited thereto. In another embodiment, the size of the base 20 may also be larger than the size of the growth substrate GS. For example, the substrate 20 can be an 8-inch or 12-inch wafer, and the growth substrate GS can be a 4-inch or 6-inch wafer.

The material of the buffer layer 21 can be determined according to the material to be epitaxially grown on the substrate 20 later. In an embodiment, a gallium nitride epitaxial layer is subsequently formed on the substrate 20, so the material of the buffer layer 21 can be selected to match the lattice constant of the substrate 20 and the lattice constant of gallium nitride, such as: aluminum nitride. In the inventive embodiment, the buffer layer 21 has a thickness of at least 500 nm. When the lattice constants of the substrate 20 and the buffer layer 21 are greatly different, the thickness of the buffer layer 21 can also be increased.

As shown in FIG. 6 , an epitaxial layer 22 is formed on the buffer layer 21 , and the material of the epitaxial layer 22 is the same as that of the single crystal template 10 . In one embodiment, the material of the epitaxial layer 22 and the material of the single crystal template 10 are GaN. It should be noted that in the existing epitaxial process, metalorganic vapor deposition is usually used to form epitaxial layers with high crystal quality, but due to the high process temperature (about 1100 ^oC ) and the gap between the epitaxial layer and the substrate Due to the difference in thermal expansion coefficient, it is easy to warp and deform. Especially when the epitaxial layer is formed on the substrate 20 with a large size in a high-temperature process, the problem of warping will be more serious.

In contrast, in the inventive embodiment, overcoming does not require the epitaxial layer 22 to have good crystalline quality. That is to say, the epitaxial layer 22 can be amorphous or polycrystalline, and can be fabricated by a relatively low-temperature process to minimize warpage or deformation. For example, the epitaxial layer 22 can be formed on the buffer layer 21 through a sputtering process, and the process temperature is only 500 ^° C-700 ^°C .

Please continue to refer to FIG. 7 , a bonding layer 23A is formed on the epitaxial layer 22 . In one embodiment, one of the elements contained in the material of the epitaxial layer 22 is the same group element as the element of the material of the bonding layer 23A. Further, when the material of the epitaxial layer 22 is a nitride of a group IIIA element, the material of the bonding layer 23A may be a group IIIA metal or an alloy containing a group IIIA metal. For example, the material of the epitaxial layer 22 is gallium nitride, and the material of the bonding layer 23A may be aluminum metal, indium metal, thallium metal or an alloy containing the aforementioned metals. It should be noted that the thickness of the bonding layer 23A may range from 5 nm to 10 nm, so as to be completely reacted into another material in a subsequent step. A bonding interface 231 is formed between the bonding layer 23A and the epitaxial layer 22 . After performing the processes in FIGS. 5 to 7 , the supporting substrate 2 can be formed.

Please refer to step S12 of FIG. 1 , in step S12 , the single crystal template and the supporting substrate are bonded. Please refer to FIG. 8 and FIG. 9 together, the single crystal template 10 may be disposed on the bonding surface 232 of the bonding layer 23A. In this embodiment, the size of the single crystal template 10 is substantially the same as that of the substrate 20 . According to this, when the single crystal template 10 is disposed on the bonding layer 23A, the single crystal template 10 completely covers the bonding surface 232 of the bonding layer 23A. At this time, no bonding occurs between the single crystal template 10 and the bonding layer 23A.

Referring to FIG. 10 , in the step of bonding the single crystal template 10 and the supporting substrate 2 , the bonding layer 23A can react with the single crystal template 10 and the epitaxial layer 22 by heating the single crystal template 10 and the supporting substrate 2 . Thus, the single crystal template 10 can be fixed on the support substrate 2 .

In one embodiment, the single crystal template 10 and the support substrate 2 are pressed together, and the single crystal template 10 together with the support substrate 2 is heated to a predetermined reaction temperature and maintained for a predetermined reaction time until the bonding layer 23A is completely reacted. The single crystal template 10 and the support substrate 2 can be heated by the heater 3 in a nitrogen atmosphere or an oxygen atmosphere. The aforementioned predetermined reaction temperature can be determined according to the material of the bonding layer 23A, but is not more than 1200 ^°C , preferably 600 ^° C to 1000 ^° C, so as to reduce warping deformation. When the single crystal template 10 and the epitaxial layer 22 are both made of gallium nitride, and the material of the bonding layer 23A is an aluminum layer, the predetermined reaction temperature is at least 800 ^o C, and the temperature is maintained for at least 1 hour, but this creation does not example is limited.

Please refer to FIG. 11 , after the bonding layer 23A is completely reacted, an interface reaction layer 23 is formed. The interfacial reaction layer 23 will bond with both the single crystal template 10 and the epitaxial layer 22 , so that the single crystal template 10 can be bonded on the supporting substrate 2 .

In one embodiment, the material of the single crystal template 10 and the epitaxial layer 22 is gallium nitride, and the material of the bonding layer 23A is aluminum for example. After heating under the nitrogen atmosphere, the gallium atoms in the single crystal template 10 or the epitaxial layer 22 diffuse into the bonding layer 23A, and the aluminum atoms, gallium atoms and nitrogen atoms in the bonding layer 23A react. On the other hand, the aluminum atoms in the bonding layer 23A can also diffuse into the epitaxial layer 22 or the single crystal template 10 to replace the gallium atoms and form stable chemical bonds with the nitrogen atoms in the epitaxial layer 22 or the single crystal template 10 . Therefore, the material of the interface reaction layer 23 formed after the alloy reaction of the bonding layer 23A is AlGaN.

In another embodiment, when the bonding layer 23A is made of indium, the material of the interface reaction layer 23 is InGaN. In yet another embodiment, when the material of the bonding layer 23A is Indium Aluminum Alloy, the material of the interface reaction layer 23 is AlInGaN. That is to say, after performing the bonding step ( S12 ), the material connected between the epitaxial layer 22 and the single crystal template 10 will change from metal (bonding layer 23A) to III-V compound semiconductor (interfacial reaction layer 23 ). Therefore, the lattice constant difference between the interface reaction layer 23 and the epitaxial layer 22 or between the single crystal template 10 is small, which can increase the binding force between the interface reaction layer 23 and the epitaxial layer 22, and the interface The binding force between the reaction layer 23 and the single crystal template 10. In addition, the difference in thermal expansion coefficient between the interface reaction layer 23 and the epitaxial layer 22 and the single crystal template 10 is small, which can also reduce internal stress.

After the single crystal template 10 is bonded to the support substrate 2 , the bonding substrate can be formed, and the single crystal template 10 can be used to grow device layers. However, please refer to FIG. 1 again, in order to reuse the single crystal template 10, the manufacturing method of the present invention may further include step S13 and step S14.

In step S13 , the single crystal template is cut to separate the single crystal template into a first part and a second part, and the first part forms a single crystal layer on the supporting substrate. In step S14, the surface of the single crystal layer is polished. Referring to FIG. 12 , in this embodiment, the single crystal template 10 is cut laterally to be separated into two parts. In one embodiment, a laser lift-off process may be performed to laterally cut the single crystal template 10 .

Referring to FIG. 13 , the second part 10B of the single crystal template 10 is peeled off, leaving the first part on the support substrate 2 to form a single crystal layer 10A. Notably, the thickness of the first portion (single crystal layer 10A) is smaller than that of the second portion 10B. In one embodiment, the ratio between the thickness of the first portion (single crystal layer 10A) and the total thickness of the single crystal template 10 is 1 to 1000. For example, when the total thickness of the single crystal template 10 is 1 mm, the single crystal layer 10A is only about 1 μm. After the surface 10 s of the single crystal layer 10A is polished, the surface 10 s of the single crystal layer 10A of the bonding substrate Z1 can be used for epitaxial growth components, such as light emitting diodes, high power components or radio frequency components. In one embodiment, the surface 10s of the single crystal layer 10A can be polished to have an extremely low surface roughness by chemical mechanical polishing.

It is worth mentioning that the manufacturing method of the present invention may further include: bonding the second portion 10B of the single crystal template 10 with another supporting substrate 2 . It should be noted that, before the second part 10B is bonded to the other support substrate 2 , the surface of the second part 10B may be polished to increase the bonding force between the second part 10B and the other support substrate 2 .

In other words, after being peeled off, the second portion 10B of the single crystal template 10 can be reused to be bonded to another supporting substrate 2 to manufacture another bonding substrate Z1 . Accordingly, the single crystal template 10 produced by the manufacturing method of the present invention can be used repeatedly to manufacture a large number of bonding substrates Z1 for growing devices, which can reduce the manufacturing cost of devices.

As shown in FIG. 13 , through the manufacturing method provided by the first embodiment of the present invention, a bonding substrate Z1 for growing components can be manufactured. The bonding substrate Z1 includes the supporting substrate 2 and the single crystal layer 10A. The supporting substrate 2 may include a base 20 , a buffer layer 21 , an epitaxial layer 22 and an interface reaction layer 23 .

The material of the substrate 20 is silicon, silicon carbide, aluminum nitride, gallium oxide or aluminum oxide. The buffer layer 21 is located between the substrate 20 and the epitaxial layer 22 and can reduce the internal stress between the substrate 20 and the epitaxial layer 22 due to the difference in lattice constant and thermal expansion coefficient. In this embodiment, the epitaxial layer 22 can be fabricated by a relatively low-temperature and low-cost sputtering process. Therefore, the epitaxial layer 22 can be an amorphous or polycrystalline sputtered epitaxial layer.

A chemical bond is formed between the interface reaction layer 23 , the epitaxial layer 22 and the single crystal layer 10A, so that the single crystal layer 10A can be connected to the epitaxial layer 22 . The material of the single crystal layer 10A and the epitaxial layer 22 may be the nitride of the first element, and the material of the interface reaction layer 23 may include the nitride or oxide of the first element and the nitride or oxide of the second element, and The second element is a family element of the first element.

For example, if the first element is gallium, the second element may be aluminum, indium or thallium. That is to say, the material of the epitaxial layer 22 and the single crystal layer 10A can be polycrystalline gallium nitride and single crystal gallium nitride respectively, and the material of the interface reaction layer 23 can be aluminum gallium nitride, indium gallium nitride, or is Aluminum Indium Gallium Nitride. In this way, the materials of the interface reaction layer 23, the epitaxial layer 22 and the single crystal layer 10A are all III-V compound semiconductors, and the lattice constants can match each other, so that there is a large gap between the single crystal layer 10A and the epitaxial layer 22. Strong binding force.

In another embodiment, the material of the interface reaction layer 23 may optionally include aluminum nitride, indium nitride, aluminum indium nitride, aluminum gallium nitride, indium gallium nitride, or aluminum indium gallium nitride , aluminum oxide, indium oxide or one of them or any combination thereof.

In this embodiment, the single crystal layer 10A completely covers the interface reaction layer 23, but the invention is not limited thereto. The surface 10s of the single crystal layer 10A is polished to have a very low surface roughness, and can be used as a growth surface for subsequent epitaxial growth components. In detail, the average surface roughness of the surface 10s of the single crystal layer 10A may be lower than 5 nm, or even lower than 1 nm.

[Second embodiment]

Please refer to FIG. 14 . FIG. 14 is a flowchart of a method for manufacturing a bonded substrate according to a second embodiment of the present invention. In step S20, a plurality of single crystal templates are provided, and in step S21, a supporting substrate is provided. It should be noted that the detailed process of manufacturing the supporting substrate 2 can refer to FIG. 5 to FIG. 7 and the corresponding descriptions, which will not be repeated here. In addition, the detailed process of manufacturing each single crystal template 10 can refer to FIG. 2 to FIG. 4 and the corresponding description.

It is worth mentioning that, in this embodiment, the size of each single crystal template 10 is smaller than that of the supporting substrate 2 . In the manufacturing method of this embodiment, after each single crystal template 10 is peeled off from the growth substrate GS, each single crystal template 10 can be cut so that the shape of the single crystal template 10 is consistent with the shape of another single crystal template 10. co-operate.

Please refer to step S22 in FIG. 14 . In step S22, a plurality of single crystal templates are bonded to the supporting substrate, and the plurality of single crystal molds are spliced together to form a spliced single crystal template. As shown in FIG. 15 , a plurality of single crystal templates 10 cut into predetermined shapes are placed on the support substrate 2 to form a spliced single crystal template 100 . In this embodiment, the spliced single crystal template 100 partially covers the bonding surface 232 of the bonding layer 23A, so that part of the bonding layer 23A is exposed, but the invention is not limited thereto.

As mentioned above, the material of the spliced single crystal template 100 and the epitaxial layer 22 can be the nitride of the first element, and the material of the bonding layer 23A can contain the second element, and the second element is of the same group as the first element. element. For example, the material of the spliced single crystal template 100 and the epitaxial layer 22 is gallium nitride, and the first element is gallium. Therefore, the second element contained in the material of the bonding layer 23A may be aluminum, indium, or thallium. That is, the material of the bonding layer 23A may be aluminum metal, indium metal, thallium metal, or an alloy containing the foregoing metals.

Referring to FIG. 16 , the heater 3 can be used to heat the spliced single crystal template 100 and the support substrate, so that the bonding layer 23A reacts with the spliced single crystal template 100 and the epitaxial layer 22 . In one embodiment, the spliced single crystal template 100 and the support substrate 2 can be heated to a predetermined reaction temperature in a nitrogen atmosphere or an oxygen atmosphere, and maintained for a predetermined reaction time. The aforementioned predetermined reaction temperature can be determined according to the material of the bonding layer 23A, but is not more than 1200 ^°C , preferably 600 ^° C to 1000 ^° C, so as to avoid warping and deformation of the support substrate 2 .

When the single crystal template 10 and the epitaxial layer 22 are both made of gallium nitride, and the material of the bonding layer 23A is an aluminum layer, the predetermined reaction temperature is at least 800 ^o C, and the predetermined reaction time is at least 1 hour, but the present invention does not use This example is limited.

Referring to FIG. 17 , after the bonding layer 23A is reacted, an interface reaction layer 23 is formed. The interfacial reaction layer 23 will bond with both the spliced single crystal template 100 and the epitaxial layer 22 , so that the spliced single crystal template 100 is bonded on the supporting substrate 2 .

In one embodiment, it is exemplified that the material of the spliced single crystal template 100 and the epitaxial layer 22 is gallium nitride, and the material of the bonding layer 23A is aluminum. After heating under the nitrogen atmosphere, the gallium atoms in the stitched single crystal template 100 or the epitaxial layer 22 diffuse into the bonding layer 23A, and the aluminum atoms, gallium atoms and nitrogen atoms in the bonding layer 23A react. On the other hand, the aluminum atoms in the bonding layer 23A can also diffuse into the epitaxial layer 22 or the spliced single crystal template 100 to replace the gallium atoms, and produce nitrogen atoms in the epitaxial layer 22 or the spliced single crystal template 100 Stable chemical bond.

Therefore, the material of the interface reaction layer 23 formed after the bonding layer 23A undergoes an alloy reaction includes AlGaN. It is worth mentioning that when heating, the region of the bonding surface 232 of the bonding layer 23A not covered by the stitched single crystal template 100 will be oxidized or nitrided. Accordingly, the material of the interface reaction layer 23 may not only include AlGaN, but also include at least one of AlN or AlO.

In another embodiment, when the material of the bonding layer 23A is indium, the material of the interface reaction layer 23 includes at least one of indium nitride or indium oxide in addition to indium gallium nitride. When the bonding layer 23A is made of indium aluminum alloy, the material of the interface reaction layer 23 may include at least one of aluminum indium nitride or aluminum indium oxide in addition to aluminum indium gallium nitride.

Please refer to steps S23 and S24 of FIG. 14 again. In step S23, the spliced single crystal template is cut to separate the spliced single crystal template into a first part and a second part, and the first part forms a single crystal on the support substrate. Floor. Next in step S24, the surface of the single crystal layer is polished. As shown in FIG. 18 , in this embodiment, the spliced single crystal template 100 is cut laterally to be separated into two parts. In one embodiment, a laser lift-off process may be performed to laterally cut the spliced single crystal template 100 .

Referring to FIG. 19 , the second part 100B of the spliced single crystal template 100 is peeled off, leaving the first part on the support substrate 2 to form a single crystal layer 100A. Notably, the thickness of the first portion (single crystal layer 100A) is smaller than that of the second portion 100B. In one embodiment, the ratio between the thickness of the first portion (the single crystal layer 100A) and the total thickness of the spliced single crystal template 100 is 1 to 1000. For example, when the total thickness of the spliced single crystal template 100 is 1 mm, the single crystal layer 100A is only about 1 μm. After the surface 100 s of the single crystal layer 100A is polished, the surface 10 s of the single crystal layer 100A of the bonding substrate Z2 can be used for epitaxial growth components, such as light emitting diodes, high power components or radio frequency components. In one embodiment, the surface 100s of the single crystal layer 100A can be polished to have an extremely low surface roughness by chemical mechanical polishing.

It is worth mentioning that the manufacturing method of the present invention may further include: joining the second part 100B of the spliced single crystal template 100 with another supporting substrate 2 . It should be noted that, before the second part 100B is bonded to another supporting substrate 2, the surface of the second part 100B may also be polished to have a lower surface roughness, so as to increase the bonding between the second part 100B and another supporting substrate. The binding force between 2.

As shown in FIG. 19 , another bonding substrate Z2 for growing components can be fabricated through the manufacturing method provided in this embodiment. Components of the bonding substrate Z2 in this embodiment that are the same as those of the bonding substrate Z1 shown in FIG. 13 have the same or similar reference numerals and will not be repeated here.

The bonding substrate Z2 includes the supporting substrate 2 and the single crystal layer 100A. The supporting substrate 2 may include a base 20 , a buffer layer 21 , an epitaxial layer 22 and an interface reaction layer 23 . In this embodiment, the single crystal layer 100A partially covers the interface reaction layer 23 .

The material of the single crystal layer 10A and the epitaxial layer 22 may be the nitride of the first element, and the material of the interface reaction layer 23 may include the nitride or oxide of the first element and the nitride or oxide of the second element, and The second element is a family element of the first element.

For example, if the first element is gallium, the second element may be aluminum, indium or thallium. That is to say, the material of the epitaxial layer 22 and the single crystal layer 10A can be polycrystalline gallium nitride and single crystal gallium nitride respectively, and the material of the interface reaction layer 23 can be aluminum gallium nitride, indium gallium nitride, or is Aluminum Indium Gallium Nitride. In this way, the materials of the interface reaction layer 23, the epitaxial layer 22 and the single crystal layer 10A are all III-V compound semiconductors, and the lattice constants can match each other, so that there is a large gap between the single crystal layer 10A and the epitaxial layer 22. Strong binding force.

In this embodiment, besides aluminum gallium nitride, indium gallium nitride or aluminum indium gallium nitride, the material of the interface reaction layer 23 further includes aluminum nitride, indium nitride, aluminum indium nitride, aluminum oxide , indium oxide or aluminum indium oxide or any combination thereof.

In this embodiment, the single crystal layer 100A partially covers the interface reaction layer 23 , but the invention is not limited thereto. The surface 100s of the single crystal layer 100A is polished to have a very low surface roughness, and can be used as a growth surface for subsequent epitaxial growth components. In detail, the average surface roughness of the surface 100s of the single crystal layer 100A may be lower than 5 nm, or even lower than 1 nm.

[Advantageous Effects of Embodiment]

One of the beneficial effects of this invention is that the bonding substrate and its manufacturing method provided by this invention can "provide one or more single crystal templates 10" and "provide a supporting substrate 2, wherein the supporting substrate 2 includes a base 20. The bonding layer 23A and the epitaxial layer 22, the epitaxial layer 22 is located between the substrate 20 and the bonding layer 23A, and the material of the epitaxial layer 22 is the same as that of the single crystal template 10" and "bonding one or more single crystal templates 10 and the technical solution of the supporting substrate 2" to reduce the manufacturing cost. In addition, the epitaxial layer 22 in the support substrate 2 of this embodiment can be produced by a relatively low temperature process (such as: sputtering), therefore, when a large-size support substrate 2 is produced, the support substrate 2 can be avoided from warping out of shape.

In the step of bonding one or more single crystal templates 10 and the supporting substrate 2, the bonding layer 23A, the single crystal template 10 and the epitaxial layer 22 are alloyed to form a single crystal template 10 that matches the lattice constant. The interface reaction layer 23 can also improve the bonding strength between the single crystal template 10 and the supporting substrate 2 .

On the other hand, the single crystal template 10 provided in this creative embodiment can be used repeatedly. That is to say, the same single crystal template 10 can be repeatedly attached to multiple supporting substrates 2 to manufacture a large number of bonding substrates Z1, Z2, which can reduce the manufacturing cost of components.

The content disclosed above is only the preferred feasible embodiment of this creation, and does not limit the scope of patent application for this creation. Therefore, all equivalent technical changes made by using the instructions and drawings of this creation are included in the application of this creation. within the scope of the patent.

Z1, Z2: Bonded substrate GS: Growth Substrate 10:Single crystal template 10A: single crystal layer 10s: surface 10B: Part Two L: laser light 2: Support substrate 20: base 21: buffer layer 22: epitaxial layer 23A: bonding layer 231: Bonding interface 232: joint surface 23: Interface reaction layer 100: splice single crystal template 100B: Part II 100A: single crystal layer 100s: surface 3: Heater S10-S14, S20-S24: process steps

FIG. 1 is a flowchart of a method for manufacturing a bonded substrate according to a first embodiment of the present invention.

FIG. 2 is a schematic diagram of the step of forming a single crystal template on a growth substrate according to the first embodiment of the present invention.

FIG. 3 is a schematic diagram of the step of separating the single crystal template and the growth substrate according to the first embodiment of the present invention.

FIG. 4 is a schematic diagram of the first embodiment of the present invention after the step of separating the single crystal template and the growth substrate.

FIG. 5 is a schematic diagram of the supporting substrate of the first embodiment of the present invention after a buffer layer is formed on the substrate.

FIG. 6 is a schematic diagram of the supporting substrate after the step of forming an epitaxial layer on the buffer layer according to the first embodiment of the present invention.

FIG. 7 is a schematic diagram of the supporting substrate after the step of forming the bonding layer on the epitaxial layer according to the first embodiment of the present invention.

FIG. 8 is a three-dimensional schematic view of the step of bonding the single crystal template and the supporting substrate according to the first embodiment of the present invention.

FIG. 9 is a schematic diagram of the step of bonding the single crystal template and the supporting substrate according to the first embodiment of the present invention.

FIG. 10 is a schematic diagram of the step of heating the single crystal template and the supporting substrate according to the first embodiment of the present invention.

FIG. 11 is a schematic diagram of the first embodiment of the present invention after the step of bonding the single crystal template and the supporting substrate.

FIG. 12 is a schematic diagram of the step of cutting a single crystal template according to the first embodiment of the present invention.

FIG. 13 is a schematic diagram of the first embodiment of the present invention after the step of cutting the single crystal template.

FIG. 14 is a flowchart of a method for manufacturing a bonded substrate according to a second embodiment of the present invention.

FIG. 15 is a schematic perspective view of the second embodiment of the present invention during the step of bonding a plurality of single crystal templates and a supporting substrate.

FIG. 16 is a schematic diagram of the step of heating the spliced single crystal template and the supporting substrate according to the second embodiment of the present invention.

FIG. 17 is a schematic diagram of the second embodiment of the present invention after the step of joining the spliced single crystal template and the supporting substrate.

FIG. 18 is a schematic diagram of the second embodiment of the present invention during the step of cutting the spliced single crystal template.

FIG. 19 is a schematic diagram of the second embodiment of the present invention after the step of cutting the spliced single crystal template.

10:Single crystal template

2: Support substrate

20: base

21: buffer layer

22: epitaxial layer

23A: bonding layer

231: Bonding interface

232: joint surface

Claims (6)

A bonded substrate comprising: A supporting substrate, which includes a base, an epitaxial layer, and an interface reaction layer, wherein the epitaxial layer is located between the base and the interface reaction layer, and the interface reaction layer and the epitaxial layer bonded to each other; and A single crystal layer, which is connected to the support substrate, wherein the material of the single crystal layer is the same as that of the epitaxial layer, and the single crystal layer is connected to the epitaxial layer through the interface reaction layer Floor. The bonding substrate according to claim 1, wherein the material of the single crystal layer is a nitride of the first element, and the material of the interface reaction layer includes the nitride or oxide of the first element and a second a nitride or an oxide of an element, and the second element is a congener element of the first element. The bonding substrate according to claim 1, wherein the material of the interface reaction layer includes at least one of nitride and oxide. The bonding substrate according to claim 1, wherein the supporting substrate further includes a buffer layer connected between the substrate and the epitaxial layer, and the thickness of the buffer layer is at least 500 nm. The bonding substrate according to claim 1, wherein the material of the base is silicon, silicon carbide, aluminum nitride, gallium oxide or aluminum oxide. The bonded substrate according to claim 1, wherein the single crystal layer partially covers the interface reaction layer.

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