TWM632448U - A system of regulating dispensing of intelligent filling - Google Patents
A system of regulating dispensing of intelligent filling Download PDFInfo
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Abstract
本新型提供一種智能填塗的調整補正系統,利用智能填塗之演算單元,對於流體填塗單元所填塗的流體動態地進行偵測,隨時判斷流體的填塗狀況並自動調整下一次流體填塗的流體量。本新型係透過一閉迴路達到能夠依據前次的流體狀態之回饋,並調整本次的流體量,可以解決先前技術中,因流體的狀態不易控制(例如溢膠或膠水不足)所引起的缺陷。The new model provides an adjustment and correction system for intelligent filling and coating. The calculation unit of intelligent filling and coating is used to dynamically detect the fluid filled by the fluid filling and coating unit, judge the filling and coating status of the fluid at any time, and automatically adjust the next fluid filling. The amount of fluid applied. The new model achieves feedback based on the previous fluid state through a closed loop, and adjusts the current fluid volume, which can solve the defects in the prior art due to the difficulty in controlling the fluid state (such as excess glue or insufficient glue) .
Description
本新型是關於一種智能填塗的調整補正系統及方法,尤其為一種利用閉迴路系統,並依據前次流體材料狀態,而調整本次流體填塗量的調整補正系統及其方法。The new model relates to an adjustment and correction system and method for intelligent filling and coating, especially an adjustment and correction system and method for adjusting the current fluid filling amount according to the state of the previous fluid material by using a closed-loop system.
近年來之封裝晶片的技術中,為了適用於各種電子產品,晶片所接合之基板通常為非陶瓷材料,因此晶片與基板之間的熱膨脹係數(Coefficient of Thermal Expansion, CTE)不同,在封裝的過程中容易因熱變應力而導致半導體產品的缺陷。In recent years of chip packaging technology, in order to be suitable for various electronic products, the substrate to which the chip is bonded is usually a non-ceramic material, so the coefficient of thermal expansion (CTE) between the chip and the substrate is different. It is easy to cause defects in semiconductor products due to thermal stress.
為了消除上述的熱變應力,現有技術是在晶片與基板之間填充封膠體(underfill),以降低半導體產品的缺陷;為了將封膠體填充至晶片與基板之間,現有技術中包含壓模法(molding)及填塗法(dispensing);在壓模法中,當基板的厚度極小(例如為薄膜基板)時,壓模之灌膠壓力容易導致基板的位移,因此壓模法不適用在基板的厚度極小之晶片封裝。In order to eliminate the above-mentioned thermal stress, the prior art is to fill the underfill between the wafer and the substrate to reduce the defects of semiconductor products; in order to fill the underfill between the wafer and the substrate, the prior art includes a compression molding method (molding) and filling method (dispensing); in the compression molding method, when the thickness of the substrate is extremely small (for example, a thin film substrate), the glue filling pressure of the compression mold easily leads to the displacement of the substrate, so the compression molding method is not suitable for the substrate. Chip packages with extremely small thickness.
在填塗法中,是在晶片的周邊以L型、U型或I型塗佈封膠體,封膠體因毛細作用而「滲入」晶片與基板之間的間隙,毛細作用的發生取決於封膠體對晶片與基板之表面張力及其加熱溫度,藉此使封膠體填充並佈滿於晶片與基板之間隙以進行密封;然而,毛細作用之填充的過程需要時間,且不易控制封膠體的擴散方向,導致填塗的效率較差且品質不易控制,若因填充的時間不足而致使不均勻的擴散時,晶片與基板之間容易產生氣泡,導致因封膠不確實而使半導體產品產生缺陷。In the filling and coating method, the encapsulant is coated on the periphery of the wafer with L-shape, U-shape or I-shape. The encapsulant "penetrates" into the gap between the wafer and the substrate due to capillary action. The occurrence of capillary action depends on the encapsulant. The surface tension of the wafer and the substrate and the heating temperature, so that the encapsulant fills and fills the gap between the wafer and the substrate for sealing; however, the filling process by capillary action takes time, and it is difficult to control the diffusion direction of the encapsulant , resulting in poor filling efficiency and difficult quality control. If the filling time is insufficient to cause uneven diffusion, air bubbles are likely to be generated between the wafer and the substrate, resulting in defects in semiconductor products due to inaccurate encapsulation.
此外,隨著電子產品的高度發展,現今技術中所使用的晶片、基板等材料多元化,不同的晶片與不同的基板之間的間隙都不同,且在同一片晶片中,晶片中每一個位置所對應的基板之間的每一個間隙也都不同,若無法動態地隨時進行膠水的調整,很容易因溢膠而使多出來的膠水溢到其他的電子元件(例如銲墊(pad)等),或者因膠量不足而導致不均勻的擴散,這些都會使產品產生缺陷。In addition, with the high development of electronic products, the materials such as wafers and substrates used in the current technology are diversified, and the gaps between different wafers and different substrates are different, and in the same wafer, every position in the wafer Each gap between the corresponding substrates is also different. If the glue cannot be adjusted dynamically at any time, it is easy for the excess glue to overflow to other electronic components (such as pads, etc.) due to the overflow of glue. , or uneven spread due to insufficient glue, which can cause product defects.
另外,流體填塗的技術應用還包含「填縫」,即可以將流體於產品的狹縫中進行填塗,例如可以於半導體基板、面板、或其他任何帶有狹縫的產品上進行填塗;然而,現有的技術中都無法動態地進行膠水的調整,很容易因溢膠而使狹縫區域多出不必要的膠水,或者因膠量不足而導致狹縫的填塗不充分,這些都會使產品產生缺陷。In addition, the technical application of fluid filling also includes "filling", that is, fluid can be filled in the slits of products, such as semiconductor substrates, panels, or any other products with slits. However, in the existing technology, it is impossible to dynamically adjust the glue, and it is easy to cause unnecessary glue in the slit area due to overflow of glue, or insufficient filling and coating of the slit due to insufficient glue. cause the product to be defective.
本新型創作人鑑於上述先前技術的各項缺點,乃亟思加以改良創新,並經多年的研究實驗後,終於成功研發完成本新型之智能填塗的調整補正系統及方法。In view of the shortcomings of the above-mentioned prior art, the creator of this new type has been eager to improve and innovate, and after years of research and experimentation, he has finally successfully developed the new intelligent filling and painting adjustment and correction system and method.
本新型揭露一種智能填塗的調整補正系統及方法,利用智能填塗之演算單元,對於流體填塗單元所填塗的流體動態地進行偵測,隨時判斷流體的填塗狀況並自動調整下一次流體填塗的流體量,可以解決先前技術中,因流體的狀態不易控制(例如溢膠或膠水不足)所引起的缺陷。The present invention discloses an adjustment and correction system and method for intelligent filling and coating. The calculation unit of intelligent filling and coating is used to dynamically detect the fluid filled by the fluid filling and coating unit, so as to judge the filling and coating status of the fluid at any time and automatically adjust the next time. The amount of fluid filled by the fluid can solve the defects in the prior art caused by the difficulty in controlling the state of the fluid (eg, excess glue or insufficient glue).
本新型揭露一種智能填塗的調整補正系統,包含:流體填塗單元,將流體材料填塗至目標區域,進行第N次填塗,N為常數;光學量測單元,動態地偵測在目標區域之流體材料的狀態,並產生第N三維流體訊號;演算單元,電性連接於流體填塗單元及光學量測單元,接收第N三維流體訊號,並得出流體材料的狀態,演算單元將流體材料的狀態與流體狀態預設數值比對,若流體材料的狀態不符流體狀態預設數值,則演算單元傳送第N流體量變更訊號給流體填塗單元,以使流體填塗單元依據第N流體量變更訊號來調整填塗流體量。The new model discloses an adjustment and correction system for intelligent filling and coating, comprising: a fluid filling and coating unit, which fills and coats a fluid material to a target area, and performs the Nth filling and coating, where N is a constant; an optical measuring unit, which dynamically detects the target area The state of the fluid material in the area, and generate the Nth three-dimensional fluid signal; the calculation unit, which is electrically connected to the fluid filling unit and the optical measurement unit, receives the Nth three-dimensional fluid signal, and obtains the state of the fluid material. The calculation unit will The state of the fluid material is compared with the preset value of the fluid state. If the state of the fluid material does not match the preset value of the fluid state, the calculation unit transmits the Nth fluid quantity change signal to the fluid filling and coating unit, so that the fluid filling and coating unit is based on the Nth The fluid volume change signal is used to adjust the filling fluid volume.
在本新型的一實施例中,目標區域是晶片與基板之間的空隙之流體填塗端。In one embodiment of the present invention, the target area is the fluid-filled end of the void between the wafer and the substrate.
在本新型的一實施例中,流體材料的狀態包含流體的體積、流體的重量、流體在空隙內的高度、流體在空隙內的寬度、流體填滿空隙的程度。In an embodiment of the present invention, the state of the fluid material includes the volume of the fluid, the weight of the fluid, the height of the fluid in the void, the width of the fluid in the void, and the degree to which the fluid fills the void.
在本新型的一實施例中,目標區域是狹縫。In an embodiment of the present invention, the target area is a slit.
在本新型的一實施例中,流體材料的狀態包含流體的體積、流體的重量、流體在狹縫內的高度、流體在狹縫內的寬度、流體填滿狹縫的程度。In an embodiment of the present invention, the state of the fluid material includes the volume of the fluid, the weight of the fluid, the height of the fluid in the slit, the width of the fluid in the slit, and the degree to which the fluid fills the slit.
在本新型的一實施例中,流體填塗單元是出膠單元;流體材料是膠水;光學量測單元為雷射測量儀、共聚焦雷射掃描顯微鏡、飛秒紅外雷射器與共聚焦顯微鏡之組成、共軛雷射、三維量測裝置、超音波量測裝置、干涉儀或三角雷射量測裝置。In an embodiment of the present invention, the fluid filling and coating unit is a glue dispensing unit; the fluid material is glue; the optical measurement unit is a laser measuring instrument, a confocal laser scanning microscope, a femtosecond infrared laser and a confocal microscope composition, conjugate laser, three-dimensional measuring device, ultrasonic measuring device, interferometer or triangular laser measuring device.
在本新型的一實施例中,光學量測單元包含有至少一視覺模組。視覺模組可以為CCD相機、CCD影像感測器、CMOS 影像感測器、CMOS相機、光學顯微鏡、電子掃描顯微鏡或穿透式顯微鏡。In an embodiment of the present invention, the optical measurement unit includes at least one vision module. The vision module can be a CCD camera, a CCD image sensor, a CMOS image sensor, a CMOS camera, an optical microscope, an electron scanning microscope, or a transmission microscope.
本新型另揭露一種智能填塗的調整補正方法,包含:第N次填塗步驟,流體填塗單元將流體材料填塗至晶片與基板之間的第N流體填塗端,並使流體材料朝向晶片與基板之間的流體擴散端進行擴散,以填塗晶片與基板之間的空隙,N為常數;第N次偵測步驟,光學量測單元動態地偵測在晶片與基板之間的空隙之流體材料的狀態,並將第N三維流體訊號傳送給演算單元;第N次調整步驟,演算單元依據第N三維流體訊號來控制流體填塗單元之填塗流體量;第N+1次填塗步驟,藉由經演算單元所調整之流體填塗單元,將流體材料填塗至晶片與基板之間的第N+1流體填塗端。The present invention further discloses an adjustment and correction method for intelligent filling and coating, comprising: an Nth filling and coating step, wherein the fluid filling and coating unit fills the fluid material to the Nth fluid filling end between the wafer and the substrate, and causes the fluid material to face The fluid diffusion end between the wafer and the substrate is diffused to fill the gap between the wafer and the substrate, N is a constant; in the Nth detection step, the optical measurement unit dynamically detects the gap between the wafer and the substrate The state of the fluid material, and the Nth three-dimensional fluid signal is sent to the calculation unit; in the Nth adjustment step, the calculation unit controls the filling fluid amount of the fluid filling and coating unit according to the Nth three-dimensional fluid signal; the N+1th filling In the coating step, by the fluid filling unit adjusted by the arithmetic unit, the fluid material is filled to the N+1 th fluid filling end between the wafer and the substrate.
在本新型的一實施例中,在第N+1次填塗步驟之後,更包括:第N+1次偵測步驟,光學量測單元動態地偵測在晶片與基板之間的空隙之流體材料的狀態,並將第N+1三維流體訊號傳送給演算單元;第N+1次調整步驟,演算單元依據第N+1三維流體訊號來控制流體填塗單元之填塗流體量;第N+2次填塗步驟,藉由經演算單元所調整之流體填塗單元,將流體材料填塗至晶片與基板之間的第N+2流體填塗端。In an embodiment of the present invention, after the N+1th filling and coating step, the method further includes: an N+1th detection step, wherein the optical measuring unit dynamically detects the fluid in the gap between the wafer and the substrate The state of the material, and the N+1th three-dimensional fluid signal is sent to the calculation unit; in the N+1th adjustment step, the calculation unit controls the filling fluid amount of the fluid filling and coating unit according to the N+1th three-dimensional fluid signal; the Nth In the +2 filling and coating steps, the fluid material is filled to the N+2th fluid filling end between the wafer and the substrate by the fluid filling and coating unit adjusted by the arithmetic unit.
本新型另揭露一種智能填塗的調整補正方法,包含:第N次填塗步驟,流體填塗單元將流體材料填塗至狹縫,使流體材料對狹縫進行填縫,N為常數;第N次偵測步驟,光學量測單元動態地偵測在狹縫內之流體材料的狀態,並將第N三維流體訊號傳送給演算單元;第N次調整步驟,演算單元依據第N三維流體訊號來控制流體填塗單元之填塗流體量。The present invention further discloses an adjustment and correction method for intelligent filling and coating, comprising: the Nth filling and coating step, the fluid filling and coating unit fills the fluid material to the slit, so that the fluid material fills the slit, and N is a constant; In the Nth detection step, the optical measurement unit dynamically detects the state of the fluid material in the slit, and transmits the Nth three-dimensional fluid signal to the calculation unit; in the Nth adjustment step, the calculation unit is based on the Nth three-dimensional fluid signal. To control the amount of filling fluid in the fluid filling unit.
藉由如上的智能填塗的調整補正系統及其方法,是將光學量測單元、流體填塗單元與演算單元設計為閉迴路,故於每次填塗流體材料後,演算單元能夠依據光學量測單元所量測的流體材料的三維資訊,而得出流體材料的狀態(例如體積或重量),並隨時調整流體填塗單元之填塗流體量。本新型係透過閉迴路達到能夠依據前次的流體材料填塗量之回饋,並調整本次的流體材料填塗量,藉以解決先前技術中因流體的狀態不易控制(例如溢膠或膠水不足)所引起的缺陷。With the above intelligent filling and coating adjustment and correction system and method, the optical measurement unit, the fluid filling and coating unit and the calculation unit are designed as a closed loop, so after each time the fluid material is filled, the calculation unit can be based on the optical quantity The three-dimensional information of the fluid material measured by the measuring unit can be obtained to obtain the state of the fluid material (such as volume or weight), and the amount of the fluid filled by the fluid filling and coating unit can be adjusted at any time. This new model achieves feedback according to the previous filling amount of fluid material through a closed loop, and adjusts the current filling amount of fluid material, so as to solve the problem of the difficulty in controlling the state of the fluid in the prior art (such as overflowing or insufficient glue) the resulting defects.
為了使所屬技術領域中具有通常識者能夠充分瞭解本新型之技術特徵、內容與優點及其所能達到之功效,茲將本新型配合圖式,並以實施例之表達形式詳細說明如下,而其中所使用之圖式,其主旨僅為示意及輔助說明書之用,未必為本新型實施後之真實比例與精準配置,故不應就所附之圖式的比例與配置關係解讀、侷限本新型於實際實施上的權利範圍,合先敘明。In order to enable those skilled in the art to fully understand the technical features, contents and advantages of the present invention and the effects that can be achieved, the present invention is described in detail as follows in the form of an embodiment in conjunction with the drawings. The purpose of the drawings used is only for illustration and auxiliary instructions, and may not necessarily be the real scale and precise configuration after the implementation of the new model. Therefore, the proportion and configuration relationship of the attached drawings should not be interpreted or limited to The scope of rights in actual implementation will be described first.
請參閱圖1~2,圖1為本新型的一實施例之目標區域為晶片5與基板6之間的空隙之智能填塗的調整補正系統的示意圖,圖2為本新型的一實施例之目標區域為晶片與基板之間的空隙之填塗結果示意圖;如圖所示,智能填塗的調整補正系統包含流體填塗單元1、光學量測單元2與演算單元3。Please refer to FIGS. 1-2 . FIG. 1 is a schematic diagram of an adjustment and correction system for intelligently filling the gap between the
以下針對本新型之智能填塗的調整補正系統之各個元件進行詳細說明,然而,本新型並不受限於此。Each element of the adjustment and correction system for intelligent filling and coating of the present invention will be described in detail below, however, the present invention is not limited thereto.
本實施例中,晶片5與基板6之間的間隙可被視為目標區域,流體填塗單元1將流體材料4填塗至晶片5與基板6之間的間隙;光學量測單元2偵測流體材料4的狀態,並經由演算單元3控制流體填塗單元1之填塗流體量。In this embodiment, the gap between the
流體填塗單元1的種類與結構並不受限制,可以是適用於使用者所預期應用的任何類型,例如儲存有流體材料4的塗覆閥、出膠單元等。在一實施例中,流體填塗單元1為出膠單元,例如可以為點膠針頭;此外,流體材料4的種類並不限定,可以是膠水、焊膏、底部填充材料、黏合劑、密封劑、封膠體或其他合適的材料;在一實施例中,流體材料4為膠水;可以將晶片5與基板6之間的間隙區分為流體填塗端7及流體擴散端8,流體填塗端7是流體填塗單元1填塗流體材料4的入口,流體材料4從流體填塗端7進入晶片5與基板6之間的間隙,並藉由毛細作用擴散至流體擴散端8;在一實施例中,流體材料4是一種熱固性之絕緣物,其填塗於晶片5與基板6之間的間隙,通常流體材料4不覆蓋晶片5,流體材料4在未熱固化前具有適當之流動性,當流體填塗單元1進行填塗時,藉由加熱裝置(圖中未示)進行適當加熱,可以維持流體材料4良好的流動性,並在毛細作用下填塗晶片5與基板6之間的間隙。The type and structure of the fluid filling and coating unit 1 are not limited, and may be any type suitable for the application expected by the user, such as a coating valve storing the
關於流體材料4的狀態,可以是填塗出流體材料4的擴散流速、擴散分布、流體材料厚度等狀態;在一實施例中,流體材料的狀態包含流體的體積、流體的重量、流體在空隙內的高度、流體在空隙內的寬度、流體填滿空隙的程度。Regarding the state of the
流體填塗單元1電性連接於演算單元3,並且受到演算單元3的控制,流體填塗單元1之填塗流體量可以精準地受到演算單元3的控制,流體填塗單元1與演算單元3之間的電性連接方式不受限制;例如演算單元3可透過控制流體填塗單元1的控制閥(圖中未示)來控制流體填塗單元1之填塗流體量;控制閥可以位於流體填塗單元1的任何位置,控制閥可以是逆止閥、電磁閥或單向閥;在一實施例中,演算單元3給與流體填塗單元1之控制閥一擴張訊號,可以提高流體填塗單元1之填塗流體量;演算單元3給與流體填塗單元1之控制閥一收縮訊號,可以減少流體填塗單元1之填塗流體量;演算單元3給與流體填塗單元1之控制閥一關閉訊號,即停止流體填塗單元1之填塗。The fluid filling and coating unit 1 is electrically connected to the
光學量測單元2是用於動態地偵測在晶片5與基板6之間隙的流體材料4的狀態,並產生第N三維流體訊號且傳送給演算單元3,N為常數;本新型之光學量測單元2的種類與結構並不受限制,例如可以為近接開關、電容式感應器、近接感測器、光學式感測器、或其他合適的偵測裝置。The
光學量測單元2電性連接演算單元3;光學量測單元2的設置位置與設置方式並不受限制,但從提升封裝效率的觀點考慮,光學量測單元2較佳為設置在流體擴散端8的一側,並且可以對應於流體擴散端8進行移動以進行動態地偵測。The
在一實施例中,光學量測單元2可以為雷射測量儀、共聚焦雷射掃描顯微鏡、飛秒紅外雷射器與共聚焦顯微鏡之組成、共軛雷射、三維量測裝置、超音波量測裝置、干涉儀或三角雷射量測裝置,或者可以為包含有至少一上視覺模組與至少一側視覺模組,上視覺模組與側視覺模組可以為電荷耦合器件(Charge-coupled Device,CCD)相機、CCD影像感測器、互補金屬氧化物半導體(Complementary Metal Oxide Semiconductor,CMOS)影像感測器、CMOS相機、光學顯微鏡(Optical Microscope)、電子掃描顯微鏡(Scanning Electron Microscope)或穿透式顯微鏡(Transmission electron microscope);利用視覺外觀及/或雷射來動態地偵測流體擴散的狀態,並透過演算單元3隨時調整流體填塗單元1之填塗流體量的狀態,可以解決先前技術中因流體的狀態不易(例如溢膠或膠水不足)控制所引起的缺陷。In one embodiment, the
在一實施例中,光學量測單元2為共聚焦雷射掃描顯微鏡或飛秒紅外雷射器與共聚焦顯微鏡之組成。共聚焦雷射掃描顯微鏡(Confocal laser scanning microscopy,CLSM)之原理主要是利用針孔光圈(Pinhole)將非聚焦面的光排除在外。共聚焦雷射掃描顯微鏡的技術可去除傳統螢光顯微鏡影像中的非具焦面的光,可將樣品一層一層觀察,大大增加了影像的對比、解析度以及螢光偵測訊噪比。In one embodiment, the
在一實施例中,光學量測單元2包含至少一視覺模組,視覺模組可為電荷耦合器件(Charge-coupled Device,CCD)相機或CCD影像感測器,對流體材料4進行影像擷取;在一實施例中,視覺模組可為上視覺模組及側視覺模組,上視覺模組擷取位於流體材料4之上方影像,側視覺模組擷取流體材料4之側面影像。上方影像與側面影像係提供給演算單元3,演算單元3依據上方影像與側面影像而得到第N三維流體訊號。In one embodiment, the
演算單元3依據來自光學量測單元2的第N三維流體訊號,以控制流體填塗單元1的填塗流體量;在一實施例中,演算單元3接收第N三維流體訊號後,得出流體材料4的狀態,演算單元3將流體材料4的狀態與流體狀態預設數值比對,若流體材料4的狀態不符流體狀態預設數值,則演算單元3傳送第N流體量變更訊號給流體填塗單元1,以使流體填塗單元1依據第N流體量變更訊號來調整填塗流體量。The
演算單元3還具有控管製程相關的其他功能;在一實施例中,流體填塗單元1內部進一步設有含量感應器(圖中未示),含量感應器電性連接演算單元3,當流體填塗單元1的流體含量過低時,含量感應器會給演算單元3一含量不足訊號,演算單元3會發出一訊號或警示訊號給相關工作人員,以使工作人員得以補充或更換流體填塗單元1內部的流體。The
光學量測單元2是動態地偵測流體材料4的狀態,並隨時將第N三維流體訊號傳送給演算單元3,因此演算單元3基於第N三維流體訊號,動態地發送訊號給流體填塗單元1,隨時調整流體填塗單元1的填塗流體量;藉由上述結構,可以在填塗流體材料4的過程中,隨時掌控流體材料4填塗的狀態並調整流體填塗單元1的填塗流體量,可以解決先前技術中,因流體的狀態不易控制所引起的缺陷。The
在一實施例中,流體填塗單元1依據第N流體量變更訊號以調整流體填塗量後,使流體材料4的體積或重量符合或趨近於流體狀態預設數值的方式進行第N+1次填塗,例如,可以使流體材料4的體積或重量符合或趨近於流體狀態預設數值之95%至105%之間的方式進行第N+1次填塗;換句話說,第N+1次填塗中所提供之流體材料4的體積或重量在流體狀態預設數值之95%至105%之間,較佳為97%至103%之間,更佳為99%至101%之間,再更加為100%。In one embodiment, after the fluid filling and coating unit 1 adjusts the fluid filling amount according to the Nth fluid volume change signal, the volume or weight of the
流體狀態預設數值可以使用習知的方法來定義,例如,在特定的基板與特定的晶片的情況下,可以使用過去填塗的經驗來定義流體狀態預設數值,換句話說,流體狀態預設數值並非一定值,而是會隨著基板種類、晶片種類等而改變;在本實施例中,流體狀態預設數值可以為合適的流體的體積、流體的重量、流體在空隙內的高度、流體在空隙內的寬度、流體填滿空隙的程度等。The preset value of the fluid state can be defined using a conventional method. For example, in the case of a specific substrate and a specific wafer, the preset value of the fluid state can be defined using the past experience of filling and coating. In other words, the preset value of the fluid state. The set value is not a fixed value, but will change with the type of substrate, type of wafer, etc. In this embodiment, the preset value of the fluid state can be the volume of the appropriate fluid, the weight of the fluid, the height of the fluid in the gap, The width of the fluid within the void, how well the fluid fills the void, etc.
本新型之智能填塗的調整補正系統所適用的基板6並不受限制;關於基板6種類,例如可以為玻璃基板、矽基板、藍寶石基板、具有積體電路的基板、砷化鎵基板、用於顯示器之基板、由聚醯亞胺構成的軟質薄膜基板、或其他任何合適的基板;關於基板6的尺寸,例如可以為6吋、8吋或其他合適的尺寸;關於基板6的厚度,可以是如薄膜基板般具有極小的厚度、或其他合適的厚度。The
基板6上可以形成有各種電子元件及電路分佈,例如連接線路(pad)、焊接墊、或其他合適的電子元件;在一實施例中,基板上形成有連接線路,連接線路可以是銅或銅合金之導電線路,並被防焊漆(solder resist)所覆蓋,以電性延伸並形成接合之排線。Various electronic components and circuit distributions may be formed on the
本新型之智能填塗的調整補正系統所適用的晶片5種類並不受限制,可以為包含RGB三種顔色的發光二極體晶片等;晶片5與基板6之間存在有間隙,且不同種類的晶片5與不同種類的基板6之間存在有不同大小與形狀的間隙;即使是同一片晶片5與同一片基板6,在此晶片5中不同的位置所對應的基板6之間的間隙的形狀與大小也都不一定相同;關於晶片5的形狀,可以是矩形等任何形狀;在一實施例中,晶片5的形狀為矩形,矩形的晶片與基板之間具有第一邊、第二邊、第三邊、第四邊;在一實施例中,第一邊為流體填塗端7,第二邊至第四邊為流體擴散端8;在一實施例中,第一邊、第二邊為流體填塗端7,第三邊、第四邊為流體擴散端8;在一實施例中,第一邊至第三邊為流體填塗端7,第四邊為流體擴散端8。The new type of intelligent filling and coating adjustment and correction system is not limited to five types of chips, which can be LED chips including three colors of RGB; there is a gap between the chip 5 and the substrate 6, and different types of chips There are gaps of different sizes and shapes between the wafer 5 and different types of substrates 6; even if it is the same wafer 5 and the same substrate 6, the shape of the gap between the substrates 6 corresponding to different positions in the wafer 5 and size are not necessarily the same; the shape of the wafer 5 can be any shape such as a rectangle; in one embodiment, the shape of the wafer 5 is a rectangle, and the rectangular wafer and the substrate have a first side, a second side, a The third side and the fourth side; in one embodiment, the first side is the fluid filling end 7, and the second side to the fourth side are the fluid diffusion end 8; in one embodiment, the first side and the second side are It is the fluid filling end 7 , the third side and the fourth side are the fluid diffusion end 8 ; in one embodiment, the first to third sides are the fluid filling end 7 , and the fourth side is the fluid diffusion end 8 .
舉例而言,流體填塗單元1的設置位置與設置方式並不受限制,晶片5與基板6之間的流體填塗端7係可填塗流體材料4。從提升封裝效率的觀點考慮,流體填塗單元1較佳為設置在流體填塗端7的一側,並且可以對應於流體填塗端7進行移動以進行複數次的填塗。For example, the installation position and arrangement of the fluid filling and coating unit 1 are not limited, and the
舉例而言,在一實施例中,晶片5為矩形,矩形的晶片5與基板6之間具有四個邊,流體填塗端為四個邊中的至少一邊,流體擴散端為流體填塗端以外的其他邊。For example, in one embodiment, the
請參閱圖3,其係為本新型的一實施例之目標區域為晶片與基板之間的空隙之智能填塗的調整補正方法的示意圖,即本新型之智能填塗的調整補正方法之第一實施例:Please refer to FIG. 3 , which is a schematic diagram of the adjustment and correction method of intelligent filling in which the target area is the gap between the chip and the substrate according to an embodiment of the present invention, that is, the first adjustment and correction method of the intelligent filling and painting of the present invention. Example:
第一實施例包含:第N次填塗步驟、第N次偵測步驟、第N次調整步驟、第N+1次填塗步驟,N為常數;並視情況包含第N+1次偵測步驟、第N+1次調整步驟、第N+2次填塗步驟;填塗步驟中的總填塗次數將視晶片5及基板6的大小而決定,沒有受到限制;本實施例以總共填塗三次膠水作為示例,即N、N+1、N+2分別為1、2、3,但本新型並不限於此,以下對於各步驟進行詳細說明。The first embodiment includes: the Nth filling and coating step, the Nth detection step, the Nth adjustment step, the N+1th filling and coating step, and N is a constant; and the N+1th detection is included as the case may be. step, the N+1 adjustment step, and the N+2 filling step; the total filling times in the filling step will be determined by the size of the
第1次填塗步驟中,流體填塗單元1將膠水填塗至晶片5與基板6之間的第1流體填塗端71,並使膠水藉由毛細作用朝向晶片5與基板6之間的流體擴散端8進行擴散,以填塗晶片5與基板6之間的空隙;第1流體填塗端71的位置並不受限制;在此實施例中,晶片5為矩形,第1流體填塗端71的位置可以是在矩形晶片5與基板6之間形成的的任意一邊上;將上述邊劃分為中央與兩側時,第1流體填塗端71的位置可以是在上述邊之中央或兩側;請參考圖2,在此實施例中,第1流體填塗端71的位置位於上述邊之其中一側(晶片的其一角落側)。In the first filling and coating step, the fluid filling and coating unit 1 fills the first
在第1次偵測步驟中,光學量測單元2動態地偵測在晶片5與基板6之間的空隙之膠水的狀態,並將第1三維流體訊號傳送給演算單元3,光學量測單元2偵測膠水的體積、膠水的重量、膠水在空隙內的高度、膠水在空隙內的寬度、膠水填滿空隙的程度等。In the first detection step, the
特別說明的是,本新型的實施例是在第1次填塗步驟之後進行第1次偵測步驟;然而,填塗步驟的次數、以及填塗步驟與偵測步驟的順序並不受限制,例如,可以在每填塗2次之後再進行1次偵測步驟、在每填塗3次之後再進行1次偵測步驟、在每填塗4次之後再進行1次偵測步驟等,依此類推;換句話說,並非所有的填塗步驟之後都需要進行偵測步驟。It is particularly noted that, in the embodiment of the present invention, the first detection step is performed after the first filling and coating step; however, the number of filling and coating steps and the order of the filling and coating steps and the detection steps are not limited. For example, a detection step can be performed after every 2 fillings, a detection step can be performed after every 3 fillings, a detection step can be performed after every 4 fillings, etc. And so on; in other words, not all coating steps need to be followed by a detection step.
在第1次調整步驟中,演算單元3依據第1三維流體訊號來控制流體填塗單元1之膠水量,當第1三維流體訊號指出為缺膠的狀態時,演算單元3給與流體填塗單元1一擴張訊號,可以提高流體填塗單元1之膠水量;當第1三維流體訊號指出為溢膠的狀態時,演算單元3給與流體填塗單元1一收縮訊號,可以減少流體填塗單元1之膠水量;其中,所謂的缺膠的狀態可以是膠水的體積不足、膠水的重量不足、膠水在空隙內的高度過低、膠水在空隙內的寬度過小、膠水填滿空隙的程度過低等;同樣地,所謂的溢膠的狀態可以是膠水的體積過大、膠水的重量過高、膠水在空隙內的高度過高、膠水在空隙內的寬度過大、膠水填滿空隙的程度過高等。In the first adjustment step, the
在第2次填塗步驟中,藉由經演算單元3所調整之流體填塗單元1,將膠水填塗至晶片5與基板6之間的第2流體填塗端72。In the second filling step, the fluid filling unit 1 adjusted by the
在本實施例中,填塗步驟先進行兩次的填塗,並經由調整步驟後進行第三次(最後一次)的填塗;三次填塗的位置並不受限制,例如可以是依序在第1流體填塗端71、第2流體填塗端72進行填塗,經由調整步驟後於第3流體填塗端73進行填塗;或者,可以是依序在第1流體填塗端71、第3流體填塗端73進行填塗,經由調整步驟後於第2流體填塗端72進行填塗,依此類推。In this embodiment, the filling and coating step is performed twice first, and the third (last) filling is performed after the adjustment step; the positions of the three fillings are not limited, for example, they can be sequentially The first
除了上述步驟之外,可以視情況更包含第2次偵測步驟、第2次調整步驟、第2次填塗步驟。In addition to the above steps, the second detection step, the second adjustment step, and the second filling step may be further included depending on the situation.
在第2次偵測步驟中,光學量測單元2動態地偵測在晶片5與基板6之間的空隙之膠水的狀態,並將第2三維流體訊號傳送給演算單元3,光學量測單元2偵測膠水的體積、膠水的重量、膠水在空隙內的高度、膠水在空隙內的寬度、膠水填滿空隙的程度等。In the second detection step, the
在第2次調整步驟中,演算單元3依據第2三維流體訊號來控制流體填塗單元1之膠水量。In the second adjustment step, the
在第3次填塗步驟中,藉由經演算單元3所調整之流體填塗單元1,將膠水填塗至晶片5與基板6之間的第3流體填塗端73。In the third filling step, by the fluid filling unit 1 adjusted by the
在本實施例中,填塗步驟先進行一次的填塗,並經由調整步驟後進行第二次的填塗,並於再次調整後進行第三次的填塗;三次填塗的位置並不受限制,例如可以是在第1流體填塗端71進行填塗,經調整後於第2流體填塗端72進行填塗,經再次調整後於第3流體填塗端73進行填塗;或者,可以是在第1流體填塗端71進行填塗,經調整後於第3流體填塗端73進行填塗,經再次調整後於第2流體填塗端72進行填塗,依此類推。In this embodiment, the filling and coating step is performed once, and after the adjustment step, the second filling is performed, and the third filling is performed after the adjustment again; the positions of the three fillings are not affected by the For example, the first
特別說明的是,本新型之第1流體填塗端71、第2流體填塗端72、第3流體填塗端73都位於矩形晶片5與基板6之間的四個邊中的同一邊,但本新型並不受限於此,例如第1流體填塗端71、第2流體填塗端72、第3流體填塗端73可以在四個邊中的任兩邊,或是任三邊。In particular, the first
本實施例中,填塗結果請參考圖2,膠水可均勻分布於晶片5與基板6之間的縫隙,可以解決先前技術中,因流體的狀態不易控制(例如溢膠或膠水不足)所引起的缺陷。In this embodiment, please refer to FIG. 2 for the filling and coating results. The glue can be evenly distributed in the gap between the
請參閱圖4~7,其係為本新型的另一實施例之目標區域為狹縫之之智能填塗的調整補正方法的示意圖,即本新型之智能填塗的調整補正方法之第二實施例;本新型之智能填塗的調整補正系統適用於填補任何的狹縫10,不受狹縫10的長度、寬度、深度、形狀(例如弧狀)、材質(例如金屬、橡膠、玻璃)等影響;舉例而言,本新型可用於半導體基板的填縫、電路板的填縫、面板拼裝的填縫、邊框的填縫等,但不受限於此。Please refer to FIGS. 4-7 , which are schematic diagrams of the adjustment and correction method of intelligent filling and coating with the target area being a slit in another embodiment of the present invention, that is, the second implementation of the intelligent filling and coating adjustment and correction method of the present invention For example; the adjustment and correction system of the intelligent filling and coating of the present new type is suitable for filling any
第二實施例包含:第N次填塗步驟、第N次偵測步驟、第N次調整步驟、第N+1次填塗步驟,N為常數;並視情況包含第N+1次偵測步驟、第N+1次調整步驟、第N+2次填塗步驟;填塗步驟中的總填塗次數將視狹縫10的狀態(例如長度、寬度、深度、形狀、位置等)而決定,沒有受到限制;於本實施例中,目標物9之狹縫10可被視為目標區域。The second embodiment includes: the Nth filling and coating step, the Nth detection step, the Nth adjustment step, the N+1th filling and coating step, and N is a constant; and the N+1th detection is included depending on the situation step, the N+1th adjustment step, the N+2th filling and coating step; the total number of filling and coating in the filling and coating step will be determined according to the state of the slit 10 (eg length, width, depth, shape, position, etc.) , without limitation; in this embodiment, the
在第1次填塗步驟中,請參考圖4,流體填塗單元1將流體材料4填塗至目標物9上所帶有的狹縫10;在本實施例中,流體填塗單元1的設置位置與設置方式並不受限制,但為了使流體材料4可容易地填塗至狹縫10,例如可以將流體填塗單元1以可移動的方式設置於狹縫10的中央正上方,也可以設置在狹縫10兩側正上方。In the first filling and coating step, please refer to FIG. 4 , the fluid filling and coating unit 1 fills the
在第1次偵測步驟中,請參考圖5,光學量測單元2動態地偵測在狹縫10之流體材料4的狀態,並將第1三維流體訊號傳送給演算單元3,光學量測單元2偵測流體材料4的體積、流體材料4的重量、流體材料4在狹縫內的高度、流體材料4在狹縫內的寬度、流體材料4填滿狹縫的程度等。In the first detection step, please refer to FIG. 5, the
在第1次調整步驟中,演算單元3接收第1三維流體訊號後,得出流體材料4的狀態,演算單元3將流體材料4的狀態與流體狀態預設數值比對,若流體材料4的狀態不符流體狀態預設數值,則演算單元3傳送第1流體量變更訊號給流體填塗單元1,以使流體填塗單元1依據第1流體量變更訊號來調整填塗流體量;在本實施例中,流體材料4可以為膠水,當第1三維流體訊號指出為缺膠的狀態時,演算單元3給與流體填塗單元1一擴張訊號,可以提高流體填塗單元1之膠水量;當第1三維流體訊號指出為溢膠的狀態時,演算單元3給與流體填塗單元1一收縮訊號,可以減少流體填塗單元1之膠水量;其中,所謂的缺膠的狀態可以是膠水的體積不足、膠水的重量不足、膠水在狹縫內的高度過低、膠水在狹縫內的寬度過小、膠水填滿狹縫的程度過低等;同樣地,所謂的溢膠的狀態可以是膠水的體積過大、膠水的重量過高、膠水在狹縫內的高度過高、膠水在狹縫內的寬度過大、膠水填滿狹縫的程度過高(膠水滲出狹縫)等。In the first adjustment step, the
在本實施例中,流體狀態預設數值可以使用習知的方法來定義,例如,在特定帶有狹縫10之目標物9的情況下,可以使用過去補縫的經驗來定義流體狀態預設數值,換句話說,流體狀態預設數值並非一定值,且流體狀態預設數值會隨著狹縫的狀態而改變;在本實施例中,流體狀態預設數值可以為合適的流體的體積、流體的重量、流體在狹縫內的高度、流體在狹縫內的寬度、流體填滿狹縫的程度等。In this embodiment, the preset value of the fluid state can be defined using a conventional method. For example, in the case of a
在第2次填塗步驟中,請參考圖6,藉由經演算單元3所調整之流體填塗單元1,將膠水填塗至狹縫10。In the second filling and coating step, please refer to FIG. 6 , by the fluid filling and coating unit 1 adjusted by the
除了上述步驟之外,可以視情況更包含第2次偵測步驟、第2次調整步驟、第2次填塗步驟,其方法如同上述第一實施例,在此不多加贅述。。In addition to the above steps, the second detection step, the second adjustment step, and the second filling step may be further included depending on the situation. .
本實施例中,填塗結果請參考圖7,流體材料4可均勻地填補於狹縫10,可以解決先前技術中,因流體的狀態不易控制(例如溢膠或膠水不足)所引起的缺陷。In this embodiment, please refer to FIG. 7 for the filling result. The
綜上所述,本新型揭露一種智能填塗的調整補正系統及方法,是將光學量測單元、流體填塗單元與演算單元設計為閉迴路,故於每次填塗流體材料後,演算單元能夠依據光學量測單元所量測的流體材料的三維資訊,而得出流體材料的狀態。演算單元係將流體材料的狀態與流體狀態預設數值進行比對,若不符流體狀態預設數值,則提供流體量變更訊號給流體填塗單元,以使流體填塗單元調整流體填塗量。本新型係透過閉迴路達到能夠依據前次的流體材料填塗量之回饋,並調整本次的流體材料填塗量,藉以解決先前技術中因流體的狀態不易控制(例如溢膠或膠水不足)所引起的缺陷。To sum up, the present invention discloses an adjustment and correction system and method for intelligent filling and coating. The optical measurement unit, the fluid filling and coating unit and the calculation unit are designed as closed loops. The state of the fluid material can be obtained according to the three-dimensional information of the fluid material measured by the optical measuring unit. The calculation unit compares the state of the fluid material with the preset value of the fluid state, and if it does not match the preset value of the fluid state, a fluid quantity change signal is provided to the fluid filling and coating unit, so that the fluid filling and coating unit adjusts the fluid filling quantity. This new model achieves feedback according to the previous filling amount of fluid material through a closed loop, and adjusts the current filling amount of fluid material, so as to solve the problem of the difficulty in controlling the state of the fluid in the prior art (such as overflowing or insufficient glue) the resulting defects.
以上所述僅為舉例性,用以說明本新型之技術內容的可行具體實施例,而非用於限制本新型。本新型所屬技領域具有通常知識者基於說明書中所揭示內容之教示所為的等效置換、修改或變更,均包含於本新型之申請專利範圍中,未脫離本新型的權利範疇。The above descriptions are only exemplary, and are used to illustrate the practical embodiments of the technical content of the present invention, but are not intended to limit the present invention. Equivalent replacements, modifications or alterations made by those with ordinary knowledge in the technical field of the present invention based on the teachings of the contents disclosed in the specification are included in the scope of the patent application of the present invention and do not depart from the scope of the rights of the present invention.
1:流體填塗單元 2:光學量測單元 3:演算單元 4:流體材料 5:晶片 6:基板 7:流體填塗端 71:第1流體填塗端 72:第2流體填塗端 73:第3流體填塗端 8:流體擴散端 9:目標物 10:狹縫 1: Fluid filling unit 2: Optical measurement unit 3: Calculation unit 4: Fluid material 5: Wafer 6: Substrate 7: Fluid filling end 71: The first fluid filling end 72: The second fluid filling end 73: The third fluid filling end 8: Fluid diffusion end 9: Target 10: Slit
圖1為本新型的一實施例之目標區域為晶片與基板之間的空隙之智能填塗的調整補正系統的示意圖。 圖2為本新型的一實施例之目標區域為晶片與基板之間的空隙之填塗結果示意圖。 圖3為本新型的一實施例之目標區域為晶片與基板之間的空隙之智能填塗的調整補正方法的示意圖。 圖4為本新型的另一實施例之目標區域為狹縫之第1次填塗步驟的示意圖。 圖5為本新型的另一實施例之目標區域為狹縫之偵測步驟的示意圖。 圖6為本新型的另一實施例之目標區域為狹縫之第2次填塗步驟的示意圖。 圖7為本新型的另一實施例之目標區域為狹縫之填塗結果示意圖。 FIG. 1 is a schematic diagram of an adjustment and correction system for intelligently filling the gap between the target area and the substrate according to an embodiment of the novel. FIG. 2 is a schematic diagram of the result of filling and coating the target area between the wafer and the substrate according to an embodiment of the novel. 3 is a schematic diagram of an adjustment and correction method for intelligently filling the gap between the target area and the substrate according to an embodiment of the novel. 4 is a schematic diagram of the first filling and coating step in which the target area is a slit according to another embodiment of the novel. FIG. 5 is a schematic diagram of a detection step in which the target area is a slit according to another embodiment of the novel. 6 is a schematic diagram of the second filling and coating step in which the target area is a slit according to another embodiment of the novel. FIG. 7 is a schematic diagram of the result of filling and coating in which the target area is a slit according to another embodiment of the novel.
1:流體填塗單元 1: Fluid filling unit
2:光學量測單元 2: Optical measurement unit
3:演算單元 3: Calculation unit
4:流體材料 4: Fluid material
5:晶片 5: Wafer
6:基板 6: Substrate
7:流體填塗端 7: Fluid filling end
8:流體擴散端 8: Fluid diffusion end
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