TWM627209U - Photonic crystal surface-emitting laser device and optical system - Google Patents

Photonic crystal surface-emitting laser device and optical system Download PDF

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TWM627209U
TWM627209U TW110212730U TW110212730U TWM627209U TW M627209 U TWM627209 U TW M627209U TW 110212730 U TW110212730 U TW 110212730U TW 110212730 U TW110212730 U TW 110212730U TW M627209 U TWM627209 U TW M627209U
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Taiwan
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photonic crystal
substrate
layer
emitting laser
laser device
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TW110212730U
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郭浩中
洪國彬
陳仕誠
曾國峰
藍子翔
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鴻海精密工業股份有限公司
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Abstract

The present disclosure provides a photonic crystal surface-emitting laser device including a substrate, a light emitting layer on a surface of the substrate for generating photons driven by a driving signal, a photonic crystal layer on a side of the light emitting layer away from the substrate, and a metasurface on a side of the substrate away from the photonic crystal layer. The photons incident into the photonic crystal layer to generate laser light through a vibration on Bragg diffraction. The metasurface includes a substrate and a plurality of pillars on a surface of the substrate. At least two of the plurality of cylinders have different shapes or/and sizes. The shapes and the sizes of the plurality of cylinders are used to control an emission angle of the laser. The present disclosure also provides an optical system.

Description

光子晶體面射型雷射裝置及光學系統 Photonic crystal surface-emitting laser device and optical system

本申請涉及雷射探測技術領域,尤其涉及一種光子晶體面射型雷射裝置及光學系統。 The present application relates to the technical field of laser detection, and in particular, to a photonic crystal surface-emitting laser device and an optical system.

光子晶體面發射雷射(Photonic Crystal Surface-Emitting Laser,PCSEL)裝置具備光束品質優良、體積小、能耗低、易整合、可靠性高等優點,被廣泛應用於掃描式光達(LiDAR)系統中。 Photonic Crystal Surface-Emitting Laser (PCSEL) devices have the advantages of good beam quality, small size, low energy consumption, easy integration, and high reliability, and are widely used in scanning LiDAR systems. .

習知LiDAR通常還需搭載機械式馬達旋轉掃描(motorized spinning scanner)或微機電掃描(MEMS scanner)等結構來實現雷射光束之掃描。而機械式馬達旋轉掃描或微機電掃描等結構不利於控制LiDAR之體積。LiDAR中光子晶體面發射雷射裝置包括繞射光柵以控制雷射之發射角度。然傳統繞射光柵包括週期性重複的、結構相同的多個繞射單元,對雷射光束之發射角度控制單一,發射角度範圍受光柵製程因素所限,且高階繞射效應無法消除,以致同時產生對稱分佈的複數雷射光斑,不利於光束掃瞄。 The conventional LiDAR usually needs to be equipped with a motorized spinning scanner or a MEMS scanner to realize the scanning of the laser beam. However, structures such as mechanical motor rotation scanning or MEMS scanning are not conducive to controlling the volume of the LiDAR. The photonic crystal surface emitting laser device in LiDAR includes a diffraction grating to control the emission angle of the laser. However, the traditional diffraction grating includes a plurality of diffraction units with the same structure that are repeated periodically, and the emission angle of the laser beam is controlled in a single way. The emission angle range is limited by the factors of the grating process, and the high-order diffraction effect cannot be eliminated. Complex laser spots with symmetrical distribution are generated, which is not conducive to beam scanning.

因此,習知PCSEL亟待改進。 Therefore, conventional PCSELs are in urgent need of improvement.

本申請第一方面提供一種光子晶體面射型雷射裝置,包括:基板;發光層,位於所述基板一表面上,用於在驅動訊號驅動下產生光子;光子晶體層,位於所述發光層遠離所述基板之一側,所述光子入射至所述光子晶體層時在所述光子晶體層中產生布拉格繞射振盪,以產生雷射;以及超穎介面,位於所述基板遠離所述光子晶體層之一側,所述超穎介面包括一基底及形成於所述基底一表面之間隔設置的複數柱體,至少兩個所述柱體之 形狀或/和尺寸不同,所述超穎介面用於接收所述雷射,對所述雷射進行繞射後出射。 A first aspect of the present application provides a photonic crystal surface-emitting laser device, comprising: a substrate; a light-emitting layer, located on a surface of the substrate, for generating photons driven by a driving signal; a photonic crystal layer, located on the light-emitting layer A side away from the substrate, when the photon is incident on the photonic crystal layer, Bragg diffraction oscillation is generated in the photonic crystal layer to generate a laser; and a meta interface is located on the substrate away from the photon On one side of the crystal layer, the meta interface includes a substrate and a plurality of pillars formed at intervals on a surface of the substrate, at least two of the pillars Different in shape or/and size, the meta interface is used for receiving the laser, diffracting the laser and then emitting.

可選的,所述複數柱體中每相鄰柱體之間間距相等;或所述複數柱體中相鄰柱體之間間距不全相等。 Optionally, the distances between adjacent columns in the plurality of columns are equal; or the distances between adjacent columns in the plurality of columns are not all equal.

可選的,所述超穎介面包括複數繞射單元,每一繞射單元包括所述複數柱體中之一個或複數柱體;每一所述繞射單元中各個所述柱體之形狀或/和尺寸不同。 Optionally, the meta-interface includes a plurality of diffraction units, and each diffraction unit includes one of the plurality of cylinders or a plurality of cylinders; the shape of each of the cylinders in each of the diffraction units or / and size are different.

可選的,還包括第一透明導電層;所述第一透明導電層覆蓋所述基底形成有所述複數柱體之表面且填充所述複數柱體之間的部分空間。 Optionally, a first transparent conductive layer is further included; the first transparent conductive layer covers the surface of the substrate on which the plurality of pillars are formed and fills part of the space between the plurality of pillars.

可選的,所述光子晶體層包括第一光子晶體區域及圍繞所述第一光子晶體區域之第二光子晶體區域;所述光子入射至所述光子晶體層時在所述第一光子晶體區域產生布拉格繞射振盪,所述第二光子晶體區域用於將接收到的光子反射至所述第一光子晶體區域。 Optionally, the photonic crystal layer includes a first photonic crystal region and a second photonic crystal region surrounding the first photonic crystal region; Bragg diffraction oscillations are generated, and the second photonic crystal region is used to reflect the received photons to the first photonic crystal region.

可選的,所述第一光子晶體區域在所述基板上之正投影為矩形,且所述第二光子區域在所述基板上之正投影為圍繞所述矩形的矩形框;或所述第一光子晶體區域在所述基板上之正投影為六邊形,且所述第二光子區域在所述基板上之正投影為圍繞所述六邊形的六邊形框;或所述第一光子晶體區域在所述基板上之正投影為圓形,且所述第二光子區域在所述基板上之正投影為圍繞所述圓形的圓環形。 Optionally, the orthographic projection of the first photonic crystal region on the substrate is a rectangle, and the orthographic projection of the second photonic crystal region on the substrate is a rectangular frame surrounding the rectangle; or the first The orthographic projection of a photonic crystal region on the substrate is a hexagon, and the orthographic projection of the second photonic region on the substrate is a hexagonal frame surrounding the hexagon; or the first The orthographic projection of the photonic crystal region on the substrate is a circle, and the orthographic projection of the second photonic region on the substrate is an annular shape surrounding the circle.

可選的,所述第一光子晶體區域開設有複數第一通孔,所述第二光子晶體區域開設有複數第二通孔,所述複數第一通孔與所述複數第二通孔大小不同。 Optionally, the first photonic crystal region is provided with a plurality of first through holes, the second photonic crystal region is provided with a plurality of second through holes, and the plurality of first through holes and the plurality of second through holes have the same size. different.

可選的,所述超穎介面與所述基板材料相同。 Optionally, the material of the meta interface is the same as that of the substrate.

可選的,還包括第二透明導電層,所述第二透明導電層位於所述光子晶體層遠離所述基板之表面,用於擴散電流。 Optionally, a second transparent conductive layer is further included, the second transparent conductive layer is located on the surface of the photonic crystal layer away from the substrate, and is used for current diffusion.

本申請第二方面提供一種光學系統,包括:複數光子晶體面射型雷射裝置,每一所述光子晶體面射型雷射裝置如上述;以及 控制裝置,與所述複數光子晶體面射型雷射裝置電連接,用於輸出驅動訊號控制所述複數光子晶體面射型雷射裝置開啟或關閉。 A second aspect of the present application provides an optical system, comprising: a plurality of photonic crystal surface-emitting laser devices, each of the photonic crystal surface-emitting laser devices as described above; and The control device is electrically connected with the complex photonic crystal surface-emitting laser device, and is used for outputting a driving signal to control the complex photonic crystal surface-emitting laser device to be turned on or off.

上述光子晶體面射型雷射裝置及光學系統包括超穎介面,超穎介面包括一基底形成於所述基底一表面之間隔設置的複數柱體,至少兩個所述柱體之形狀或/和尺寸不同,超穎介面用於接收所述雷射,對所述雷射進行繞射後出射,通過設置複數柱體之形狀、尺寸和數量,可得到預期之雷射之出射角度,從而還可控制雷射形成之光斑數量、光斑大小。亦即,本實施例之光子晶體面射型雷射裝置及光學系統,藉由超穎介面,不僅可實現雷射之偏轉,還可實現雷射之整形,有利於實現對雷射之多元化控制。 The above-mentioned photonic crystal surface-emitting laser device and optical system include a meta interface, and the meta interface includes a base formed on a surface of the base and a plurality of cylinders arranged at intervals, and the shapes of at least two of the cylinders or/and Different sizes, the meta interface is used for receiving the laser, diffracting the laser and then emitting. By setting the shape, size and quantity of the plurality of cylinders, the expected exit angle of the laser can be obtained, so that the Control the number and size of the spot formed by the laser. That is, the photonic crystal surface-emitting laser device and optical system of the present embodiment can not only realize the deflection of the laser, but also realize the shaping of the laser through the meta-interface, which is beneficial to realize the diversification of the laser. control.

100:光學系統 100: Optical System

1:光子晶體面射型雷射裝置 1: Photonic crystal surface-emitting laser device

10:基板 10: Substrate

11:緩衝層 11: Buffer layer

12:第一披覆層 12: The first cladding layer

13:發光層 13: Light-emitting layer

131:量子井發光層 131: Quantum Well Light Emitting Layer

132:能障層 132: Energy barrier layer

14:光子晶體層 14: Photonic crystal layer

141:歐姆接觸層 141: Ohmic contact layer

142:第二披覆層 142: Second cladding layer

143:第一光子晶體區域 143: The first photonic crystal region

144:第二光子晶體區域 144: Second photonic crystal region

145:第一通孔 145: first through hole

146:第二通孔 146: second through hole

S:發光區 S: light-emitting area

15:超穎介面 15: Meta Interface

150:繞射單元 150: Diffraction unit

151:基底 151: Base

152:柱體 152: Cylinder

153:第一介質層 153: first dielectric layer

154:第二介質層 154: Second dielectric layer

161:第一透明導電層 161: the first transparent conductive layer

162:第二透明導電層 162: the second transparent conductive layer

171:第一電極 171: First electrode

172:第二電極 172: Second electrode

18:絕緣層 18: Insulation layer

2:控制裝置 2: Control device

200:覆晶基板 200: flip chip substrate

圖1為本申請實施例中光學系統之模塊結構示意圖。 FIG. 1 is a schematic structural diagram of a module of an optical system in an embodiment of the present application.

圖2為圖1中光子晶體面射型雷射裝置之平面結構示意圖。 FIG. 2 is a schematic plan view of the photonic crystal surface-emitting laser device in FIG. 1 .

圖3為圖2中光子晶體面射型雷射裝置沿Ⅲ-Ⅲ線之剖面結構示意圖。 FIG. 3 is a schematic cross-sectional structure diagram of the photonic crystal surface-emitting laser device in FIG. 2 along the line III-III.

圖4為圖3中光子晶體層之平面結構示意圖。 FIG. 4 is a schematic plan view of the photonic crystal layer in FIG. 3 .

圖5為本申請一變更實施例中光子晶體面射型雷射裝置的光子晶體層之平面結構示意圖。 FIG. 5 is a schematic plan view of a photonic crystal layer of a photonic crystal surface-emitting laser device according to a modified embodiment of the present application.

圖6為圖3中超穎介面之立體結構示意圖。 FIG. 6 is a schematic three-dimensional structure diagram of the Meta interface in FIG. 3 .

圖7為本申請其他實施例中不同超穎介面中一個繞射單元之立體結構示意圖。 FIG. 7 is a schematic three-dimensional structural diagram of a diffraction unit in different meta-interfaces according to other embodiments of the present application.

圖8為雷射經過圖7中繞射單元繞射後之出射角度分佈示意圖。 FIG. 8 is a schematic diagram of the exit angle distribution of the laser after being diffracted by the diffractive unit in FIG. 7 .

圖9為本申請其他實施例的超穎介面中柱體之立體結構示意圖。 FIG. 9 is a schematic three-dimensional structure diagram of a pillar in a meta interface according to another embodiment of the present application.

請參閱圖1,本申請之光學系統100包括複數光子晶體面射型雷射裝置1。光學系統100可為臉部識別感測裝置、雷射雷達等,其可應用於智慧手機、擴增實境(Augmented Reality,AR)眼鏡、虛擬現實(Virtual Reality,VR)眼鏡等各種消費性電子裝置,還可應用於汽車、家居或醫療設備,以及應用於智慧化工廠、自動化倉儲之無人載具等。光子晶體面射型雷射裝置1應用於上述各類光學系統 100中時,用於根據驅動訊號發射雷射以使得光學系統100實現三維影像感測、飛行測距等功能。 Please refer to FIG. 1 , the optical system 100 of the present application includes a complex photonic crystal surface-emitting laser device 1 . The optical system 100 can be a face recognition sensing device, a laser radar, etc., which can be applied to various consumer electronics such as smart phones, augmented reality (AR) glasses, and virtual reality (VR) glasses. The device can also be applied to automobiles, households or medical equipment, as well as unmanned vehicles used in smart chemical factories and automated warehousing. Photonic crystal surface-emitting laser device 1 is applied to the above-mentioned various optical systems 100 is used for emitting a laser according to the driving signal, so that the optical system 100 realizes functions such as three-dimensional image sensing and flight ranging.

光學系統100還包括與每一光子晶體面射型雷射裝置1電連接之控制裝置2,控制裝置2用於輸出驅動訊號至各個光子晶體面射型雷射裝置1。本實施例中,控制裝置2可為晶片、晶片組、控制主板等。複數光子晶體面射型雷射裝置1排列為一個雷射發射陣列,各個光子晶體面射型雷射裝置1用於相互獨立地被控制裝置2控制而處於開啟狀態或關閉狀態。每一光子晶體面射型雷射裝置1處於開啟狀態時發射雷射,處於關閉狀態時不發射雷射。該雷射發射陣列中,至少兩個光子晶體面射型雷射裝置1發射雷射之方向不同。 The optical system 100 further includes a control device 2 electrically connected to each photonic crystal surface-emitting laser device 1 , and the control device 2 is used for outputting driving signals to each photonic crystal surface-emitting laser device 1 . In this embodiment, the control device 2 may be a chip, a chip set, a control motherboard, or the like. The plurality of photonic crystal surface-emitting laser devices 1 are arranged in a laser emitting array, and each photonic crystal surface-emitting laser device 1 is independently controlled by the control device 2 to be in an on state or an off state. Each photonic crystal surface-emitting laser device 1 emits a laser when it is in an on state, and does not emit a laser when it is in an off state. In the laser emitting array, at least two photonic crystal surface-emitting laser devices 1 emit lasers in different directions.

在一個工作時段內,根據需要探測之物體之方向、距離、大小等,控制裝置2控制一個或複數光子晶體面射型雷射裝置1開啟。藉由改變各個光子晶體面射型雷射裝置1在不同工作時段之工作狀態(開啟或關閉),可改變該雷射發射陣列在不同工作時段所發射之雷射的方向、形態等。 During a working period, the control device 2 controls one or more photonic crystal surface-emitting laser devices 1 to turn on according to the direction, distance, size, etc. of the object to be detected. By changing the working state (on or off) of each photonic crystal surface-emitting laser device 1 in different working periods, the direction and shape of the laser emitted by the laser emitting array in different working periods can be changed.

請一併參閱圖2和圖3,光子晶體面射型雷射裝置1包括依次層疊之基板10、緩衝層11、第一披覆層12、發光層13及光子晶體層14。 Please refer to FIG. 2 and FIG. 3 together. The photonic crystal surface emitting laser device 1 includes a substrate 10 , a buffer layer 11 , a first cladding layer 12 , a light emitting layer 13 and a photonic crystal layer 14 that are stacked in sequence.

基板10為絕緣基板,用於承載和生長緩衝層11、第一披覆層12、發光層13及光子晶體層14。基板10之材料可為n型砷化鎵。本申請中緩衝層11之材料可為n型砷化鎵。 The substrate 10 is an insulating substrate for carrying and growing the buffer layer 11 , the first cladding layer 12 , the light-emitting layer 13 and the photonic crystal layer 14 . The material of the substrate 10 may be n-type gallium arsenide. In the present application, the material of the buffer layer 11 can be n-type gallium arsenide.

發光層13包括複數量子井發光層131及複數能障層132。複數量子井發光層131與複數能障層132交錯層疊。亦即,量子井發光層131與能障層132交替排列。本申請一些實施例中,發光層13包括交錯層疊之三至五個量子井發光層131及四至六個能障層132。而本實施例中,發光層13包括交錯層疊之三個量子井發光層131及四個能障層132。每一量子井發光層131的材料為砷化銦鎵,每一能障層132的材料為砷化鎵。於其他實施例中,量子井發光層131還可為砷化鋁鎵銦或磷化砷銦鎵,能障層132還可為砷化鋁鎵或砷化鋁鎵銦。 The light-emitting layer 13 includes a plurality of quantum well light-emitting layers 131 and a plurality of energy barrier layers 132 . The plurality of quantum well light-emitting layers 131 and the plurality of energy barrier layers 132 are stacked alternately. That is, the quantum well light-emitting layers 131 and the energy barrier layers 132 are alternately arranged. In some embodiments of the present application, the light-emitting layer 13 includes three to five quantum well light-emitting layers 131 and four to six energy barrier layers 132 that are alternately stacked. In this embodiment, the light-emitting layer 13 includes three quantum well light-emitting layers 131 and four energy barrier layers 132 that are alternately stacked. The material of each quantum well light-emitting layer 131 is indium gallium arsenide, and the material of each energy barrier layer 132 is gallium arsenide. In other embodiments, the quantum well light-emitting layer 131 can also be AlGaAs or InGaAsP, and the energy barrier layer 132 can also be AlGaAs or AlGaInAs.

發光層13用於在該驅動訊號驅動下產生光子。發光層13產生之光子向四周傳播,傳播至光子晶體層14中之光子在光子晶體層14中產生布拉格繞射振盪,直至光子晶體面射型雷射裝置1達到增益與損耗平衡狀態時,產生雷射。本實施例中,光子晶體面射型雷射裝置1所發射之雷射波長為905至1550nm(包含端點值)。 The light-emitting layer 13 is used for generating photons under the driving of the driving signal. The photons generated by the light-emitting layer 13 propagate around, and the photons propagated to the photonic crystal layer 14 generate Bragg diffraction oscillation in the photonic crystal layer 14 until the photonic crystal surface-emitting laser device 1 reaches a state of gain and loss balance, generating laser. In this embodiment, the wavelength of the laser emitted by the photonic crystal surface-emitting laser device 1 is 905 to 1550 nm (including the end value).

光子晶體層14包括層疊之歐姆接觸層141及第二披覆層142,第二披覆層142位於歐姆接觸層141與發光層13之間。本實施例中,歐姆接觸層141的材料為p型砷化鎵。於其他實施例中,歐姆接觸層141還可為磷化銦或磷化砷銦鎵。 The photonic crystal layer 14 includes a stacked ohmic contact layer 141 and a second cladding layer 142 . The second cladding layer 142 is located between the ohmic contact layer 141 and the light-emitting layer 13 . In this embodiment, the material of the ohmic contact layer 141 is p-type gallium arsenide. In other embodiments, the ohmic contact layer 141 may also be indium phosphide or indium gallium arsenide phosphide.

本實施例中,第一披覆層12材料為n型砷化鋁鎵,第二披覆層142為p型砷化鋁鎵。第一披覆層12與第二披覆層142用於配合鎖住發光層13發射之光子,減少光子朝向光子晶體層14方向傳播。於其他實施例中,第一披覆層12和第二披覆層142材料還可為砷化鋁銦、磷化銦或磷砷化鎵。 In this embodiment, the material of the first cladding layer 12 is n-type AlGaAs, and the material of the second cladding layer 142 is p-type AlGaAs. The first cladding layer 12 and the second cladding layer 142 are used for cooperating and locking the photons emitted by the light-emitting layer 13 to reduce the propagation of the photons toward the photonic crystal layer 14 . In other embodiments, the material of the first cladding layer 12 and the second cladding layer 142 may also be AlInAs, InP or GaAs.

請參閱圖4,光子晶體層14包括第一光子晶體區域143及圍繞第一光子晶體區域143外圍之第二光子晶體區域144。光子入射至第一光子晶體區域143時在第一光子晶體區域143產生布拉格繞射振盪以產生雷射。第二光子晶體區域144用於將接收到的光子反射至第一光子晶體區域143,以減少光子損耗,有利於提高光子晶體面射型雷射裝置1之發光效率。 Referring to FIG. 4 , the photonic crystal layer 14 includes a first photonic crystal region 143 and a second photonic crystal region 144 surrounding the periphery of the first photonic crystal region 143 . When the photons are incident on the first photonic crystal region 143 , Bragg diffraction oscillation is generated in the first photonic crystal region 143 to generate laser light. The second photonic crystal region 144 is used to reflect the received photons to the first photonic crystal region 143 , so as to reduce photon loss, which is beneficial to improve the luminous efficiency of the photonic crystal surface-emitting laser device 1 .

第一光子晶體區域143開設有複數間隔設置之第一通孔145,第二光子晶體區域144開設有複數間隔設置之第二通孔146。每一第一通孔145貫穿歐姆接觸層141及第二披覆層142,且每一第二通孔146貫穿歐姆接觸層141及第二披覆層142。複數第一通孔145及複數第二通孔146皆為圓形通孔。各個第一通孔145之直徑相同,各個第二通孔146之直徑相同。第一通孔145之直徑大於第二通孔146之直徑,第一光子晶體區域143之倒空間Γ點上的某選定模態能量位置不對齊第二光子晶體區域144之同樣模態的能量位置,因此第一光子晶體區域143之共振波長可落在第二光子晶體區域144之能隙中,進而使第二光子晶體區域144可作為水平方向的反射鏡之用,將光子反射至第一光子晶體區域143以在第一光子晶體區域143中振盪產生雷射。於其他實施例中,第一通孔145及第二通孔146還可為橢圓形、三角形、四角形、“L”形、“V”形、雙孔等(本申請中所述第一通孔145、第二通孔146的形狀為第一通孔145、第二通孔146在光子晶體層14上之開口形狀)。 The first photonic crystal region 143 defines a plurality of first through holes 145 arranged at intervals, and the second photonic crystal region 144 defines a plurality of second through holes 146 arranged at intervals. Each first through hole 145 penetrates through the ohmic contact layer 141 and the second cladding layer 142 , and each second through hole 146 penetrates through the ohmic contact layer 141 and the second cladding layer 142 . The plurality of first through holes 145 and the plurality of second through holes 146 are both circular through holes. Each of the first through holes 145 has the same diameter, and each of the second through holes 146 has the same diameter. The diameter of the first through hole 145 is larger than the diameter of the second through hole 146 , and the energy position of a selected mode on the inverse space Γ point of the first photonic crystal region 143 is not aligned with the energy position of the same mode of the second photonic crystal region 144 , so the resonance wavelength of the first photonic crystal region 143 can fall within the energy gap of the second photonic crystal region 144, so that the second photonic crystal region 144 can be used as a mirror in the horizontal direction to reflect the photons to the first photon The crystal region 143 generates laser light by oscillating in the first photonic crystal region 143 . In other embodiments, the first through holes 145 and the second through holes 146 may also be oval, triangular, quadrangular, "L" shaped, "V" shaped, double holes, etc. 145. The shape of the second through hole 146 is the shape of the opening of the first through hole 145 and the second through hole 146 on the photonic crystal layer 14).

定義光子晶體面射型雷射裝置1可發射雷射之區域為發光區S。則本實施例中,第一光子晶體區域143所在區域為發光區S。 A region where the photonic crystal surface-emitting laser device 1 can emit laser light is defined as the light-emitting region S. In this embodiment, the region where the first photonic crystal region 143 is located is the light emitting region S.

第一方面,第一光子晶體區域143所佔區域越小,驅動訊號閾值越小,也即驅動光子晶體面射型雷射裝置1發射雷射所需的電流閾值越小,電 流閾值越小,所需達到該電流閾值的時間越短,因此有利於提升光子晶體面射型雷射裝置1之操作速度。 In the first aspect, the smaller the area occupied by the first photonic crystal region 143 is, the smaller the driving signal threshold is, that is, the smaller the current threshold required to drive the photonic crystal surface-emitting laser device 1 to emit laser, the smaller the current threshold is. The smaller the current threshold value, the shorter the time required to reach the current threshold value, which is beneficial to improve the operation speed of the photonic crystal surface-emitting laser device 1 .

第二方面,第一光子晶體區域143所佔區域越小,則光子晶體面射型雷射裝置1之發光區面積越小。單個光子晶體面射型雷射裝置1之發光區面積越小,相同面積之雷射發射陣列可容納之光子晶體面射型雷射裝置1的數量越多。雷射發射陣列中光子晶體面射型雷射裝置1的數量越多,雷射發射陣列所發射之雷射的方向、形態更加多樣化。 In the second aspect, the smaller the area occupied by the first photonic crystal region 143 is, the smaller the light emitting area of the photonic crystal surface-emitting laser device 1 is. The smaller the light-emitting area of a single photonic crystal surface-emitting laser device 1 is, the greater the number of photonic crystal surface-emitting laser devices 1 that can be accommodated by a laser emitting array of the same area. The more the number of photonic crystal surface emitting laser devices 1 in the laser emitting array, the more diverse the directions and shapes of the lasers emitted by the laser emitting array.

因此本實施例中,藉由設置光子晶體層14包括第一光子晶體區域143及第二光子晶體區域144,由第一光子晶體區域143發射雷射,有利於減小光子晶體面射型雷射裝置1之發光區S之面積,從而有利於提升光子晶體面射型雷射裝置1之操作速度,且有利於使得光子晶體面射型雷射裝置1所應用之雷射發射陣列所發射的雷射的方向、形態更加多樣化。 Therefore, in this embodiment, by setting the photonic crystal layer 14 to include the first photonic crystal region 143 and the second photonic crystal region 144, the first photonic crystal region 143 emits laser light, which is beneficial to reduce the size of the photonic crystal surface-emitting laser The area of the light-emitting region S of the device 1 is beneficial to improve the operating speed of the photonic crystal surface-emitting laser device 1, and is conducive to making the laser emitted by the laser emission array applied in the photonic crystal surface-emitting laser device 1. The direction and shape of the shot are more diverse.

由圖4可知,本實施例中之第一光子晶體區域143為一矩形,第二光子晶體區域144為圍繞第一光子晶體區域143之矩形框。請參閱圖5,於本申請一變更實施例中,第一光子晶體區域143之平面結構為一六邊形,第二光子晶體區域144之平面結構為圍繞第一光子晶體區域143之六邊形框。於其他實施例中,第一光子晶體區域143還可為圓形,第二光子晶體區域144對應為圓環形(本申請中所述第一光子晶體區域143和第二光子晶體區域144之形狀為第一光子晶體區域143和第二光子晶體區域144在基板10上之正投影的形狀)。 It can be seen from FIG. 4 that the first photonic crystal region 143 in this embodiment is a rectangle, and the second photonic crystal region 144 is a rectangular frame surrounding the first photonic crystal region 143 . Please refer to FIG. 5 , in a modified embodiment of the present application, the planar structure of the first photonic crystal region 143 is a hexagon, and the planar structure of the second photonic crystal region 144 is a hexagon surrounding the first photonic crystal region 143 frame. In other embodiments, the first photonic crystal region 143 may also be circular, and the second photonic crystal region 144 may be corresponding to a circular shape (the shape of the first photonic crystal region 143 and the second photonic crystal region 144 described in this application). are the orthographic shapes of the first photonic crystal region 143 and the second photonic crystal region 144 on the substrate 10).

第一光子晶體區域143之形狀取決於光子晶體層14中光子晶體材料之晶格類型。例如,光子晶體材料之晶格類型為三角晶格或蜂巢晶格時,第一光子晶體區域143為六邊形;光子晶體材料之晶格類型為正方晶格時,第一光子晶體區域143為四邊形(或稱矩形)。 The shape of the first photonic crystal region 143 depends on the lattice type of the photonic crystal material in the photonic crystal layer 14 . For example, when the lattice type of the photonic crystal material is triangular lattice or honeycomb lattice, the first photonic crystal region 143 is hexagonal; when the lattice type of the photonic crystal material is square lattice, the first photonic crystal region 143 is Quadrilateral (or rectangle).

請繼續參閱圖3,本實施例中,光子晶體面射型雷射裝置1還包括超穎介面15。超穎介面15位於基板10遠離光子晶體層14之表面。光子晶體層14產生之雷射經超穎介面15繞射後從超穎介面15遠離光子晶體層14之一側出射。 Please continue to refer to FIG. 3 . In this embodiment, the photonic crystal surface-emitting laser device 1 further includes a meta interface 15 . The meta interface 15 is located on the surface of the substrate 10 away from the photonic crystal layer 14 . The laser generated by the photonic crystal layer 14 is diffracted by the meta interface 15 and then exits from a side of the meta interface 15 away from the photonic crystal layer 14 .

光子晶體層14與超穎介面15正對設置。也即,光子晶體層14在發光層13上之正投影與超穎介面15在發光層13上之正投影至少部分重合。本實施例中,光子晶體層14在發光層13上之正投影與超穎介面15在發光層13 上之正投影完全重合。於其他實施例中,也可超穎介面15在發光層13上之正投影完全覆蓋光子晶體層14在發光層13上之正投影。如此,有利於使得光子晶體層14產生之雷射能盡量多地入射至超穎介面15,有利於提升雷射利用率。 The photonic crystal layer 14 is disposed opposite to the meta interface 15 . That is, the orthographic projection of the photonic crystal layer 14 on the light-emitting layer 13 at least partially coincides with the orthographic projection of the meta interface 15 on the light-emitting layer 13 . In this embodiment, the orthographic projection of the photonic crystal layer 14 on the light-emitting layer 13 and the meta-interface 15 on the light-emitting layer 13 The orthographic projections above are completely coincident. In other embodiments, the orthographic projection of the meta interface 15 on the light-emitting layer 13 may completely cover the orthographic projection of the photonic crystal layer 14 on the light-emitting layer 13 . In this way, the laser generated by the photonic crystal layer 14 can be incident on the meta interface 15 as much as possible, and the utilization rate of the laser can be improved.

請一併參閱圖6,超穎介面15包括一基底151及由基底151一表面突伸出之複數間隔排列之柱體152(圖2平面圖中之柱體152之結構僅作示例,柱體152之具體結構請以圖6為準)。基底151與形成有柱體152之表面相對設置之表面與基板10表面直接接觸。基底151與柱體152為相同材料,且基底151與柱體152一體成型。各個柱體152為一包括基底151之基材經過蝕刻形成。本實施例中,超穎介面15材料與基板10相同。 Please also refer to FIG. 6 , the meta interface 15 includes a base 151 and a plurality of spaced pillars 152 protruding from a surface of the base 151 (the structure of the pillars 152 in the plan view of FIG. 2 is only an example, the pillars 152 Please refer to Figure 6 for the specific structure). The surface of the base 151 opposite to the surface on which the pillars 152 are formed is in direct contact with the surface of the substrate 10 . The base 151 and the cylinder 152 are made of the same material, and the base 151 and the cylinder 152 are integrally formed. Each of the pillars 152 is formed by etching a base material including the base 151 . In this embodiment, the material of the meta interface 15 is the same as that of the substrate 10 .

每一柱體152為一圓柱體,於一些實施例中,各個柱體152之間之間距相同,也即每相鄰兩個柱體152之間間距相同。於另一些實施例中,相鄰兩個柱體152之間間距不全相同。也即:有的相鄰柱體152之間間距不同,有的相鄰柱體152之間間距相同;或者相鄰柱體152之間間距全都不同。於又一些實施例中,各個柱體152之直徑或/和高度不同。基底151上之複數柱體152被劃分為多個繞射單元150,每個繞射單元150包括多個相鄰排列之柱體152。每個繞射單元150用於繞射接收到的雷射。 Each column 152 is a cylinder. In some embodiments, the distance between each column 152 is the same, that is, the distance between every two adjacent columns 152 is the same. In other embodiments, the distance between two adjacent pillars 152 is not all the same. That is, the distances between some adjacent columns 152 are different, and the distances between some adjacent columns 152 are the same; or the distances between adjacent columns 152 are all different. In still other embodiments, the diameters and/or heights of the various pillars 152 are different. The plurality of pillars 152 on the substrate 151 are divided into a plurality of diffraction units 150 , and each diffraction unit 150 includes a plurality of adjacently arranged pillars 152 . Each diffraction unit 150 is used to diffract the received laser.

圖7中(a)圖-(c)圖示出了本申請其他實施例中幾種不同繞射單元150之結構,圖8示出了雷射經圖7中各種繞射單元150繞射後的出射方向(或稱出射角度,其中以垂直於超穎介面15之方向作為0°方向)。由此可知,藉由改變每個繞射單元150中各個柱體之尺寸(包括直徑、高度等)、形狀、數量,可改變經超穎介面15繞射並出射後的雷射之出射方向。 Figures (a)-(c) in FIG. 7 show the structures of several different diffraction units 150 in other embodiments of the present application, and FIG. 8 shows the laser after being diffracted by the various diffraction units 150 in FIG. 7 . The outgoing direction (or the outgoing angle, in which the direction perpendicular to the meta interface 15 is taken as the 0° direction). It can be seen that, by changing the size (including diameter, height, etc.), shape and quantity of each cylinder in each diffractive unit 150, the exit direction of the laser beam diffracted and exited by the meta interface 15 can be changed.

進一步地,由於超穎介面15可改變雷射之出射方向,當超穎介面15控制雷射集中朝向某一方向出射時,相等於對雷射形成匯聚作用,在一些實施例中,通過超穎介面15對雷射之匯聚作用,可使得超穎介面15最終出射之雷射形成一單一光斑或多個光斑。根據對雷射之匯聚程度,還可控制形成之光斑大小。故,本實施例之超穎介面15還可藉由改變每個繞射單元150中各個柱體之尺寸(包括直徑、高度等)、形狀、數量,改變雷射形成的光斑數量、形成的光斑大小等。 Further, since the meta-interface 15 can change the exiting direction of the laser, when the meta-interface 15 controls the laser to concentrate in a certain direction, it is equivalent to forming a convergence effect on the laser. The converging effect of the interface 15 on the laser can make the laser finally emitted by the meta-interface 15 form a single light spot or a plurality of light spots. According to the degree of convergence of the laser, the size of the formed light spot can also be controlled. Therefore, the meta-interface 15 of this embodiment can also change the size (including diameter, height, etc.), shape, and quantity of each column in each diffraction unit 150 , so as to change the number of light spots and the light spots formed by the laser. size etc.

於其他實施例中,每一柱體152可為其他形狀之柱體。例如為圖9中(a)圖所示之橢圓柱體、圖9中(b)圖所示之四棱柱體、圖9中(c)和(d) 圖所示之三棱柱體、圖9中(e)圖所示之“L”形柱體、圖9中(f)圖所示之“V”形柱體、“十”字形柱體或“C”形柱等(本申請中所述柱體152之形狀為柱體152在基底151上正投影之形狀)。 In other embodiments, each column 152 can be a column of other shapes. For example, the elliptical cylinder shown in Fig. 9(a), the quadrangular prism shown in Fig. 9(b), and Fig. 9(c) and (d) The triangular prism shown in the figure, the "L"-shaped cylinder shown in Fig. 9(e), the "V"-shaped cylinder shown in Fig. 9(f), the "cross"-shaped cylinder or the C"-shaped column etc. (the shape of the column body 152 in this application is the shape of the orthographic projection of the column body 152 on the base 151).

本實施例中,光子晶體面射型雷射裝置1為覆晶式結構,在基板10一表面上生長完成緩衝層11、第一披覆層12、發光層13及光子晶體層14後,倒置光子晶體面射型雷射裝置1,將光子晶體面射型雷射裝置1承載於一覆晶基板200上,在基板10另一相對之表面形成超穎介面15。本實施例中,先對基板10減薄處理後再形成超穎介面15。在一些實施例中,基板10減薄處理後的厚度為減薄處理前的10%至90%,較佳為20%至70%。對基板10作減薄處理,有利於維持散熱。且雷射需要經過基板10後才出射,減薄基板10還有利於減少基板10對雷射之吸收,減小雷射損耗。 In this embodiment, the photonic crystal surface-emitting laser device 1 is a flip-chip structure. After the buffer layer 11 , the first cladding layer 12 , the light emitting layer 13 and the photonic crystal layer 14 are grown on one surface of the substrate 10 , the surface is inverted. In the photonic crystal surface emitting laser device 1 , the photonic crystal surface emitting laser device 1 is supported on a flip chip substrate 200 , and a meta interface 15 is formed on the other opposite surface of the substrate 10 . In this embodiment, the substrate 10 is thinned first, and then the meta interface 15 is formed. In some embodiments, the thickness of the substrate 10 after the thinning process is 10% to 90% of that before the thinning process, preferably 20% to 70%. Thinning the substrate 10 is beneficial to maintain heat dissipation. In addition, the laser needs to pass through the substrate 10 before being emitted. Thinning the substrate 10 is also beneficial to reduce the absorption of the laser by the substrate 10 and reduce the loss of the laser.

請再參閱圖3,本實施例中,光子晶體面射型雷射裝置1還包括第一透明導電層161和第二透明導電層162。第一透明導電層161位於超穎介面15遠離光子晶體層14之表面,第二透明導電層162位於光子晶體層14遠離基板10之表面。第一透明導電層161及第二透明導電層162皆為氧化銦錫(Indium tin oxide,ITO)。第一透明導電層161及第二透明導電層162用於擴散電流,使得電流分佈更均勻。 Please refer to FIG. 3 again. In this embodiment, the photonic crystal surface-emitting laser device 1 further includes a first transparent conductive layer 161 and a second transparent conductive layer 162 . The first transparent conductive layer 161 is located on the surface of the meta interface 15 away from the photonic crystal layer 14 , and the second transparent conductive layer 162 is located on the surface of the photonic crystal layer 14 away from the substrate 10 . Both the first transparent conductive layer 161 and the second transparent conductive layer 162 are indium tin oxide (ITO). The first transparent conductive layer 161 and the second transparent conductive layer 162 are used to diffuse current, so that the current distribution is more uniform.

本實施例中,第一透明導電層161覆蓋基底151形成有柱體152之表面並填充於超穎介面15中各個柱體152之間之空間。第一透明導電層161之厚度小於各個柱體152之高度,也即,各個柱體152之間之空間並未完全被第一透明導電層161填滿。 In this embodiment, the first transparent conductive layer 161 covers the surface of the substrate 151 on which the pillars 152 are formed and fills the spaces between the pillars 152 in the meta interface 15 . The thickness of the first transparent conductive layer 161 is smaller than the height of each column 152 , that is, the space between each column 152 is not completely filled by the first transparent conductive layer 161 .

故,雷射從光子晶體層14入射至超穎介面15中時,需要先後經過兩個折射率不同之介質層。本實施例中,兩個折射率不同之介質層定義為第一介質層153及第二介質層154。第一介質層153為各個柱體152及第一透明導電層161組成之介質層。雷射經過第一介質層153後具有第一偏轉角α1。第二介質層154為各個柱體152及空氣組成之介質層,雷射經過第二介質層154後具有第二偏轉角α2。由此可見,雷射經過兩個折射率不同之介質層共經過兩次角度偏轉,則光子晶體面發射雷射裝置1最終出射之雷射之角度為兩次角度偏轉之和,也即為α1+α2。 Therefore, when the laser is incident from the photonic crystal layer 14 into the meta interface 15, it needs to pass through two dielectric layers with different refractive indices successively. In this embodiment, two dielectric layers with different refractive indices are defined as a first dielectric layer 153 and a second dielectric layer 154 . The first dielectric layer 153 is a dielectric layer composed of each of the pillars 152 and the first transparent conductive layer 161 . The laser has a first deflection angle α1 after passing through the first dielectric layer 153 . The second dielectric layer 154 is a dielectric layer composed of each of the pillars 152 and air, and the laser has a second deflection angle α2 after passing through the second dielectric layer 154 . It can be seen from this that the laser has undergone two angular deflections after passing through two dielectric layers with different refractive indices, and the final angle of the laser emitted by the photonic crystal surface emitting laser device 1 is the sum of the two angular deflections, which is α1 +α2.

因此,藉由設置第一透明導電層161,且第一透明導電層161部分填充各個柱體152之間之空間,有利於增大光子晶體面發射雷射裝置1最終出射之雷射的偏轉角度,使得最終出射之雷射具有更大偏轉角度範圍。進而當光子晶體面發射雷射裝置1應用於光學系統100時,光學系統100具有更大的探測範圍。 Therefore, by disposing the first transparent conductive layer 161, and the first transparent conductive layer 161 partially fills the space between the columns 152, it is beneficial to increase the deflection angle of the laser finally emitted by the photonic crystal surface emitting laser device 1 , so that the final outgoing laser has a larger deflection angle range. Furthermore, when the photonic crystal surface emitting laser device 1 is applied to the optical system 100, the optical system 100 has a larger detection range.

本實施例中,光子晶體面射型雷射裝置1還包括第一電極171和第二電極172。第一電極171位於基板10遠離光子晶體層14之一側且與第一透明導電層161電接觸,第二電極172位於第二透明導電層162遠離光子晶體層14之表面,與第二透明導電層162電接觸。第一電極171及第二電極172用於與控制裝置2電連接以接收該驅動訊號。第一電極171及第二電極172為金屬,例如為鈦(Ti)、鍺(Ge)、鎳(Ni)、金(Au)或鉑(Pt)及其合金。本實施例中,第一電極171為n型電極,第二電極172為p型電極。 In this embodiment, the photonic crystal surface-emitting laser device 1 further includes a first electrode 171 and a second electrode 172 . The first electrode 171 is located on the side of the substrate 10 away from the photonic crystal layer 14 and is in electrical contact with the first transparent conductive layer 161, and the second electrode 172 is located on the surface of the second transparent conductive layer 162 away from the photonic crystal layer 14, and is in contact with the second transparent conductive layer 14. Layer 162 makes electrical contact. The first electrode 171 and the second electrode 172 are used for electrical connection with the control device 2 to receive the driving signal. The first electrode 171 and the second electrode 172 are metals, such as titanium (Ti), germanium (Ge), nickel (Ni), gold (Au) or platinum (Pt) and alloys thereof. In this embodiment, the first electrode 171 is an n-type electrode, and the second electrode 172 is a p-type electrode.

當第一電極171與第二電極172分別被施加驅動訊號時(第一電極171與第二電極172被施加之驅動訊號大小不同),驅動電流由光子晶體層14靠近透光基板10之一側注入。發光層13在驅動電流之驅動下產生光子。發光層13產生之光子傳播至光子晶體層14時在光子晶體層14中產生布拉格繞射振盪,直至光子晶體面射型雷射裝置1達到增益與損耗平衡時產生雷射,雷射入射至超穎介面15中經過特定結構之超穎介面15繞射後,被超穎介面15以特定形態、特定角度出射。 When a driving signal is applied to the first electrode 171 and the second electrode 172 respectively (the magnitude of the driving signal applied to the first electrode 171 and the second electrode 172 is different), the driving current is passed from the photonic crystal layer 14 to one side of the transparent substrate 10 . injection. The light-emitting layer 13 generates photons under the driving of the driving current. When the photons generated by the light-emitting layer 13 propagate to the photonic crystal layer 14, Bragg diffraction oscillations are generated in the photonic crystal layer 14, until the photonic crystal surface-emitting laser device 1 reaches the gain and loss balance, and the laser is generated. The meta-interface 15 in the meta-interface 15 is diffracted by the meta-interface 15 with a specific structure, and then emitted by the meta-interface 15 in a specific shape and a specific angle.

本實施例中,光子晶體面射型雷射裝置1還包括絕緣層18。絕緣層18可為氮化矽(SiNx)、二氧化矽(SiO2)或聚甲基丙烯酸甲酯(PMMA)。絕緣層18位於基板10與第一電極171之間,且位於第二電極172與光子晶體層14之間。絕緣層18主要設置於第一電極171、第二電極172、基板10及光子晶體層14之外圍,對光子晶體面射型雷射裝置1中各層材料起保護作用。 In this embodiment, the photonic crystal surface-emitting laser device 1 further includes an insulating layer 18 . The insulating layer 18 may be silicon nitride (SiN x ), silicon dioxide (SiO 2 ) or polymethyl methacrylate (PMMA). The insulating layer 18 is located between the substrate 10 and the first electrode 171 and between the second electrode 172 and the photonic crystal layer 14 . The insulating layer 18 is mainly disposed on the periphery of the first electrode 171 , the second electrode 172 , the substrate 10 and the photonic crystal layer 14 , and protects the materials of each layer in the photonic crystal surface-emitting laser device 1 .

本實施例之光子晶體面射型雷射裝置1及光學系統100包括超穎介面15,超穎介面包括一基底151及形成於基底151一表面之間隔設置的複數柱體152,至少兩個柱體152之形狀或/和尺寸不同,超穎介面15用於接收雷射,對雷射進行繞射後出射,通過設置複數柱體152之形狀、尺寸和數量,可得到預期之雷射之出射角度,從而還可控制雷射形成之光斑數量、光斑大小。亦即, 本實施例之光子晶體面射型雷射裝置1及光學系統100,藉由超穎介面15,不僅可實現雷射之偏轉,還可實現雷射之整形,有利於實現對雷射之多元化控制。 The photonic crystal surface-emitting laser device 1 and the optical system 100 of the present embodiment include the meta interface 15 . The meta interface includes a substrate 151 and a plurality of pillars 152 formed at intervals on a surface of the substrate 151 , at least two pillars. The shapes and/or sizes of the bodies 152 are different. The meta interface 15 is used for receiving lasers, diffracting the lasers and then emitting them. By setting the shape, size and quantity of the plurality of cylinders 152, the expected output of the lasers can be obtained. angle, so as to control the number and size of light spots formed by the laser. that is, The photonic crystal surface-emitting laser device 1 and the optical system 100 of the present embodiment can not only deflect the laser, but also realize the shaping of the laser through the meta interface 15, which is beneficial to realize the diversification of the laser. control.

本技術領域之普通技術人員應當認識到,以上之實施方式僅是用來說明本新型,而並非用作為對本新型之限定,只要於本新型之實質精神範圍之內,對以上實施例所作之適當改變及變化均落於本新型要求保護之範圍之內。 Those of ordinary skill in the art should realize that the above embodiments are only used to illustrate the present invention, but not to limit the present invention, as long as the above embodiments are appropriate within the spirit and scope of the present invention Changes and changes all fall within the scope of the claimed protection of this new model.

1:光子晶體面射型雷射裝置 1: Photonic crystal surface-emitting laser device

10:基板 10: Substrate

11:緩衝層 11: Buffer layer

12:第一披覆層 12: The first cladding layer

13:發光層 13: Light-emitting layer

131:量子井發光層 131: Quantum Well Light Emitting Layer

132:能障層 132: Energy barrier layer

14:光子晶體層 14: Photonic crystal layer

141:歐姆接觸層 141: Ohmic contact layer

142:第二披覆層 142: Second cladding layer

15:超穎介面 15: Meta Interface

151:基底 151: Base

152:柱體 152: Cylinder

153:第一介質層 153: first dielectric layer

154:第二介質層 154: Second dielectric layer

161:第一透明導電層 161: the first transparent conductive layer

162:第二透明導電層 162: the second transparent conductive layer

171:第一電極 171: First electrode

172:第二電極 172: Second electrode

18:絕緣層 18: Insulation layer

200:覆晶基板 200: flip chip substrate

S:發光區 S: light-emitting area

Claims (10)

一種光子晶體面射型雷射裝置,其改良在於,包括:基板;發光層,位於所述基板一表面上,用於在驅動訊號驅動下產生光子;光子晶體層,位於所述發光層遠離所述基板之一側,所述光子入射至所述光子晶體層時在所述光子晶體層中產生布拉格繞射振盪,以產生雷射;以及超穎介面,位於所述基板遠離所述光子晶體層之一側,所述超穎介面包括一基底及形成於所述基底一表面之間隔設置的複數柱體,至少兩個所述柱體之形狀或/和尺寸不同,所述超穎介面用於接收所述雷射,對所述雷射進行繞射後出射。 A photonic crystal surface-emitting laser device, which is improved by comprising: a substrate; a light-emitting layer, located on a surface of the substrate, for generating photons under the driving of a driving signal; a photonic crystal layer, located on the light-emitting layer away from all On one side of the substrate, when the photon is incident on the photonic crystal layer, Bragg diffraction oscillation is generated in the photonic crystal layer to generate a laser; and a meta interface is located on the substrate away from the photonic crystal layer On one side, the meta interface includes a base and a plurality of pillars formed at intervals on a surface of the base, at least two of the pillars are different in shape or/and size, and the meta interface is used for The laser is received, diffracted and then emitted. 如請求項1所述之光子晶體面射型雷射裝置,其中,所述複數柱體中每相鄰柱體之間間距相等;或所述複數柱體中相鄰柱體之間間距不全相等。 The photonic crystal surface-emitting laser device according to claim 1, wherein the distance between each adjacent column in the plurality of columns is equal; or the distance between adjacent columns in the plurality of columns is not all equal . 如請求項1所述之光子晶體面射型雷射裝置,其中,所述超穎介面包括複數繞射單元,每一繞射單元包括所述複數柱體中之一個或複數柱體;每一所述繞射單元中各個所述柱體之形狀或/和尺寸不同。 The photonic crystal surface-emitting laser device according to claim 1, wherein the meta-interface comprises a plurality of diffraction units, and each diffraction unit comprises one or a plurality of the plurality of cylinders; each The shape or/and size of each of the cylinders in the diffraction unit is different. 如請求項1所述之光子晶體面射型雷射裝置,其中,還包括第一透明導電層;所述第一透明導電層覆蓋所述基底形成有所述複數柱體之表面且填充所述複數柱體之間的部分空間。 The photonic crystal surface-emitting laser device according to claim 1, further comprising a first transparent conductive layer; the first transparent conductive layer covers the surface of the substrate on which the plurality of pillars are formed and fills the Partial space between plural cylinders. 如請求項1所述之光子晶體面射型雷射裝置,其中,所述光子晶體層包括第一光子晶體區域及圍繞所述第一光子晶體區域之第二光子晶體區域; 所述光子入射至所述光子晶體層時在所述第一光子晶體區域產生布拉格繞射振盪,所述第二光子晶體區域用於將接收到的光子反射至所述第一光子晶體區域。 The photonic crystal surface-emitting laser device according to claim 1, wherein the photonic crystal layer comprises a first photonic crystal region and a second photonic crystal region surrounding the first photonic crystal region; When the photons are incident on the photonic crystal layer, Bragg diffraction oscillation is generated in the first photonic crystal region, and the second photonic crystal region is used for reflecting the received photons to the first photonic crystal region. 如請求項5所述之光子晶體面射型雷射裝置,其中,所述第一光子晶體區域在所述基板上之正投影為矩形,且所述第二光子晶體區域在所述基板上之正投影為圍繞所述矩形的矩形框;或所述第一光子晶體區域在所述基板上之正投影為六邊形,且所述第二光子晶體區域在所述基板上之正投影為圍繞所述六邊形的六邊形框;或所述第一光子晶體區域在所述基板上之正投影為圓形,且所述第二光子晶體區域在所述基板上之正投影為圍繞所述圓形的圓環形。 The photonic crystal surface-emitting laser device of claim 5, wherein the orthographic projection of the first photonic crystal region on the substrate is a rectangle, and the second photonic crystal region is on the substrate The orthographic projection is a rectangular frame surrounding the rectangle; or the orthographic projection of the first photonic crystal region on the substrate is a hexagon, and the orthographic projection of the second photonic crystal region on the substrate is a surrounding The hexagonal frame of the hexagon; or the orthographic projection of the first photonic crystal region on the substrate is a circle, and the orthographic projection of the second photonic crystal region on the substrate is around the The circular torus. 如請求項5所述之光子晶體面射型雷射裝置,其中,所述第一光子晶體區域開設有複數第一通孔,所述第二光子晶體區域開設有複數第二通孔,所述複數第一通孔與所述複數第二通孔大小不同。 The photonic crystal surface-emitting laser device according to claim 5, wherein a plurality of first through holes are formed in the first photonic crystal region, a plurality of second through holes are formed in the second photonic crystal region, and the The plurality of first through holes and the plurality of second through holes have different sizes. 如請求項1所述之光子晶體面射型雷射裝置,其中,所述超穎介面與所述基板材料相同。 The photonic crystal surface-emitting laser device according to claim 1, wherein the material of the meta interface is the same as that of the substrate. 如請求項1至4任一項所述之光子晶體面射型雷射裝置,其中,還包括第二透明導電層,所述第二透明導電層位於所述光子晶體層遠離所述基板之表面,用於擴散電流。 The photonic crystal surface-emitting laser device according to any one of claims 1 to 4, further comprising a second transparent conductive layer, the second transparent conductive layer is located on the surface of the photonic crystal layer away from the substrate , for the diffusion current. 一種光學系統,其改良在於,包括:複數如請求項1至9任一項所述之光子晶體面射型雷射裝置;以及控制裝置,與所述複數光子晶體面射型雷射裝置電連接,用於輸出驅動訊號控制所述複數光子晶體面射型雷射裝置開啟或關閉。 An optical system, which is improved by comprising: a plurality of photonic crystal surface-emitting laser devices according to any one of claims 1 to 9; and a control device electrically connected to the plurality of photonic crystal surface-emitting laser devices , which is used for outputting a driving signal to control the complex photonic crystal surface-emitting laser device to be turned on or off.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI815646B (en) * 2022-09-07 2023-09-11 鴻海精密工業股份有限公司 Semiconductor device and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI815646B (en) * 2022-09-07 2023-09-11 鴻海精密工業股份有限公司 Semiconductor device and manufacturing method thereof

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