TWM618877U - Flip chip substrate and packaging structure thereof - Google Patents

Flip chip substrate and packaging structure thereof Download PDF

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TWM618877U
TWM618877U TW110204630U TW110204630U TWM618877U TW M618877 U TWM618877 U TW M618877U TW 110204630 U TW110204630 U TW 110204630U TW 110204630 U TW110204630 U TW 110204630U TW M618877 U TWM618877 U TW M618877U
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grooves
area
substrate
chip
groove
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趙婉雪
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大陸商蘇州震坤科技有限公司
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Abstract

一種覆晶基板,具有一表面,該表面上形成有複數組凹槽單元,每一組凹槽單元包含複數個凹槽,並且每一組凹槽單元的該等凹槽共同在該表面上圍成一預定區,該預定區包含一連接區,該預定區的面積大於該連接區的面積,且該等凹槽環設於該預定區的外周圍;當將晶片覆晶於基板上時,使晶板上的每一個銲球對應至每一組凹槽單元的該等凹槽的共同中心或該連接區的中心,使得在進行清洗製程時讓水更容易排除銲球周圍的助焊劑,並且可以平衡填充在晶片下方之填充材料的流動性,減少空洞形成,確保產品可靠性。A flip chip substrate has a surface on which a plurality of groups of groove units are formed, each group of groove units includes a plurality of grooves, and the grooves of each group of groove units jointly surround the surface Form a predetermined area, the predetermined area includes a connection area, the area of the predetermined area is larger than the area of the connection area, and the grooves are arranged around the predetermined area; when the chip is flip-chip on the substrate, Make each solder ball on the wafer correspond to the common center of the grooves of each group of groove units or the center of the connection area, so that the water is easier to remove the flux around the solder balls during the cleaning process. And it can balance the fluidity of the filling material filled under the chip, reduce the formation of voids, and ensure product reliability.

Description

覆晶基板及其封裝結構Flip chip substrate and its packaging structure

本創作涉及覆晶封裝之技術領域,特別在於改善晶片底部之填充材料的流動性以減少產生空洞,並且使助焊劑得以在進行清洗製程時更容易被排除。This creation relates to the technical field of flip-chip packaging, in particular to improve the fluidity of the filling material at the bottom of the chip to reduce the generation of voids, and to make the flux easier to be eliminated during the cleaning process.

晶片的覆晶封裝製程中,在將晶片倒裝至基板時需要進行底部填充製程(underfill),係利用毛細作用在晶片下方填入填充材料(一般為環氧基液體材料),但設置在晶片下方的複數個銲球(bump球)之間的不同間距排列會造成填充材料的流速不均勻而導致填充不完全的現象。此外,當銲球的尺寸小於50um時,在晶片上片之後會使助焊劑殘留在銲球周圍,無法全面被清洗掉。In the flip chip packaging process of the chip, an underfill process (underfill) is required when flipping the chip onto the substrate. The filling material (generally epoxy-based liquid material) is filled under the chip by capillary action, but it is set on the chip The arrangement of different pitches between the plurality of solder balls (bump balls) below will cause the flow rate of the filling material to be uneven and lead to incomplete filling. In addition, when the size of the solder ball is less than 50um, the flux will remain around the solder ball after the chip is mounted and cannot be completely cleaned off.

台灣專利I229928號揭露一種半導體封裝結構,如圖1所示,包括:半導體元件A、基板B、數個銲料凸塊C、底膠D、緩衝部及銲球E。基板B設置於半導體元件A下方;半導體元件A之第一表面與基板之上表面之間形成接合區;數個銲料凸塊C配置於接合區,用以電性連接半導體元件A與基板B;底膠D充填於接合區且包覆銲錫凸塊C,用以將半導體元件A和基板B緊密結合;緩衝部E係設置於接合區,用以緩衝並控制底膠D之充填;數個銲球E係配置於基板B之下表面。其中,在填充底膠製程中,底膠D在半導體元件A及基板B之間以毛細現象流動,並藉由形成在基板B上的凹槽B1作為緩衝部,確認底膠的出膠狀況,準確地控制膠量。Taiwan Patent No. I229928 discloses a semiconductor package structure, as shown in FIG. 1, including: a semiconductor element A, a substrate B, a number of solder bumps C, a primer D, a buffer, and a solder ball E. The substrate B is arranged under the semiconductor element A; a bonding area is formed between the first surface of the semiconductor element A and the upper surface of the substrate; a number of solder bumps C are arranged in the bonding area to electrically connect the semiconductor element A and the substrate B; The primer D is filled in the bonding area and covers the solder bumps C to tightly bond the semiconductor device A and the substrate B; the buffer part E is arranged in the bonding area to buffer and control the filling of the primer D; several soldering The ball E is arranged on the lower surface of the substrate B. Among them, in the primer filling process, the primer D flows between the semiconductor device A and the substrate B in a capillary phenomenon, and the groove B1 formed on the substrate B is used as a buffer to confirm the glue discharge condition of the primer. Accurately control the amount of glue.

然而,由於所述I229928號專利是將凹槽B1形成在對應半導體元件A周邊的基板B表面,亦即使得設置在半導體元件下面的銲球E位於凹槽B1所圍的範圍內,因此容易因為銲球E間距太小或不均而造成填入半導體元件A底部之底膠D的流動性不足,從而因為填膠不完全而產生空洞;此外,當銲球尺寸小於50µm時,在半導體元件上片之後,助焊劑容易殘留在銲球周圍,在進行清洗製程時無法全面地將其清洗掉,必須增加更多工序進行後續處理。However, since the I229928 patent is to form the groove B1 on the surface of the substrate B corresponding to the periphery of the semiconductor element A, that is, the solder ball E provided under the semiconductor element is located within the range of the groove B1. The pitch of the solder balls E is too small or uneven, resulting in insufficient fluidity of the primer D filled into the bottom of the semiconductor device A, resulting in voids due to incomplete filling; in addition, when the size of the solder balls is less than 50 µm, on the semiconductor device After the chip is sliced, the flux is likely to remain around the solder balls, which cannot be completely cleaned off during the cleaning process, and more processes must be added for subsequent processing.

本創作的目在於提供可以改善覆晶封裝時晶片底部之填充材料流動性不足,以及在清洗時助焊劑不容易被排除的缺失。The purpose of this creation is to improve the lack of fluidity of the filling material at the bottom of the chip during flip-chip packaging, and the lack of flux that is not easily eliminated during cleaning.

本創作的技術特徵在於提供一種覆晶基板,具有一表面,該表面上形成有複數組凹槽單元,每一組該凹槽單元包含複數個凹槽,並且每一組該凹槽單元的該等凹槽共同在該表面上圍成一預定區,該預定區包含一連接區,該預定區的面積大於該連接區的面積,且該等凹槽環設於該預定區的外周圍。藉由該基板的結構,當晶片覆晶封裝於該基板時,使設於晶片的每一個銲球 對應至該每一組凹槽單元的該等凹槽之間的該連接區,因此,藉由該凹槽可以平衡填充在晶片下方之填充材料的流動性,減少空洞形成,並且在進行清洗製程時讓水更容易排除銲球周圍的助焊劑,確保產品的可靠性。The technical feature of this creation is to provide a flip chip substrate with a surface on which a plurality of groove units are formed, each group of the groove unit includes a plurality of grooves, and each group of the groove unit has a plurality of grooves. The grooves together enclose a predetermined area on the surface, the predetermined area includes a connecting area, the area of the predetermined area is larger than the area of the connecting area, and the grooves are arranged around the predetermined area. With the structure of the substrate, when the flip chip is packaged on the substrate, each solder ball provided on the chip corresponds to the connection area between the grooves of each set of groove units. Therefore, by The groove can balance the fluidity of the filling material filled under the chip, reduce the formation of voids, and make it easier for water to remove the flux around the solder balls during the cleaning process, ensuring product reliability.

較佳地,本創作之基板上的該等凹槽亦環設於該連接區,該等凹槽與該連接區之間具有一間距。藉此,透過凹槽與連接區的距離設置,使填充材料在基板上的流動性較為均衡,以及清洗製程時讓水更容易進入銲球周圍的區域,使助銲劑較容易被清潔。Preferably, the grooves on the substrate of the invention are also arranged around the connection area, and there is a distance between the grooves and the connection area. In this way, the distance between the groove and the connection area is provided to make the fluidity of the filling material on the substrate more balanced, and during the cleaning process, it is easier for water to enter the area around the solder ball, so that the flux is easier to be cleaned.

較佳地,本創作之基板上的該連接區係用於與一晶片之複數銲球連接。藉此,使銲球設置於凹槽間的區域,使基板助銲劑的清潔及材料填充的效果較為良好。Preferably, the connection area on the substrate of the invention is used to connect with a plurality of solder balls of a chip. In this way, the solder balls are arranged in the area between the grooves, so that the cleaning of the substrate flux and the material filling effect are relatively good.

較佳地,本創作之基板上的每一組凹槽單元可以包含有四個凹槽,該四個凹槽圍繞該凹槽單元的中心配置。藉此,可以從多個方向提升填充材料之流動性。Preferably, each set of groove units on the substrate of the invention may include four grooves, and the four grooves are arranged around the center of the groove unit. Thereby, the fluidity of the filling material can be improved from multiple directions.

較佳地,該四個凹槽可以沿著圓周以等角度配置。藉此,可以從前、後、左、右四個方向提升填充材料之充分流動性。Preferably, the four grooves can be arranged at equal angles along the circumference. In this way, the full fluidity of the filling material can be improved from the front, back, left, and right directions.

較佳地,該等凹槽的直徑小於該等銲球之間距的二分之一。藉此,可以在提供填充材料充分流動性的前提下不影響到銲球與基板之間的結合。Preferably, the diameter of the grooves is less than half of the distance between the solder balls. Thereby, the bonding between the solder ball and the substrate can not be affected under the premise of providing sufficient fluidity of the filling material.

本創作還提供了利用所述覆晶基板的種覆晶封裝結構,包括:一晶片,其一面具有複數個銲球;一基板,具有一表面,該表面上形成有複數組凹槽單元,每一組該凹槽單元包含複數個凹槽,並且每一組該凹槽單元的該等凹槽共同在該表面上圍成一預定區,該預定區包含一連接區,該預定區的面積大於該連接區的面積,且該等凹槽環設於該預定區的外周圍;其中,當該晶片覆晶於該基板上時,使每一個該銲球對應連接至該每一組凹槽單元的該連接區。This creation also provides a flip-chip package structure using the flip-chip substrate, including: a chip with a plurality of solder balls on one side; a substrate with a surface on which a plurality of groove units are formed, each A group of the groove unit includes a plurality of grooves, and the grooves of each group of the groove unit jointly enclose a predetermined area on the surface, the predetermined area includes a connecting area, and the area of the predetermined area is larger than The area of the connection area, and the grooves are arranged around the outer periphery of the predetermined area; wherein, when the chip is flip-chip on the substrate, each solder ball is connected to each group of groove units correspondingly Of the connection area.

本創作通過前述的覆晶基板以及覆晶封裝結構,可以改善晶片底部之填充材料的流動性以減少產生空洞,並且使助焊劑得以在進行清洗製程時更容易被排除,從而確保產品的穩定性以及降低製造成本。Through the aforementioned flip-chip substrate and flip-chip package structure, this creation can improve the fluidity of the filling material at the bottom of the chip to reduce voids, and make the flux easier to be eliminated during the cleaning process, thereby ensuring product stability And reduce manufacturing costs.

以下配合圖式及元件符號對本創作的實施方式做更詳細的說明,俾使熟習該項技藝者在研讀本說明書後能據以實施。The following is a more detailed description of the implementation of this creation in conjunction with the drawings and component symbols, so that those who are familiar with the art can implement it after studying this manual.

圖2為顯示本創作之覆晶基板結構之俯視平面示意圖;圖3為顯示本創作之覆晶基板結構之側視剖面示意圖。Fig. 2 is a schematic top plan view showing the structure of the flip chip substrate of the present creation; Fig. 3 is a schematic side cross-sectional view showing the structure of the flip chip substrate of the present creation.

本創作提供的覆晶基板1具有一表面10,該表面10上形成有複數組凹槽單元11,每一組凹槽單元11包含複數個凹槽111,並且每一組凹槽單元11包含的複數個凹槽111共同在基板1的表面10上圍成一預定區S,該預定區S包含一連接區S2(如圖4所示),該連接區S2為該預定區S內的一部份,故該預定區S的面積大於該連接區S2的面積,且該等凹槽111環設於該預定區S的外周圍,同時該等凹槽111也是環設於該連接區S2,且該等凹槽與該連接區S2之間具有一間距。The flip chip substrate 1 provided by the present creation has a surface 10 on which a plurality of groups of groove units 11 are formed. Each group of groove units 11 includes a plurality of grooves 111, and each group of groove units 11 includes A plurality of grooves 111 collectively enclose a predetermined area S on the surface 10 of the substrate 1. The predetermined area S includes a connection area S2 (as shown in FIG. 4), and the connection area S2 is a part of the predetermined area S Therefore, the area of the predetermined area S is larger than the area of the connection area S2, and the grooves 111 are arranged around the outer periphery of the predetermined area S, and the grooves 111 are also arranged around the connection area S2, and There is a distance between the grooves and the connection area S2.

該連接區S2係用於與一晶片之複數銲球21接觸,使晶片透過銲球21固定於基板1,銲球與基板1之間會產生小於90度的夾角,當需要清洗助銲劑或是填充材料時,往往因為銲球與基板1之間所夾的銳角而使助銲劑無法完整地被清潔,以及填充材料無法填充至銳角的空間;當使用皂化劑與水的混和液清潔基板1表面的助銲劑時,或是使用填充材料填充至基板1與晶片之間的空間時,因基板1表面透過凹槽111的設置,使液體(皂化劑與水的混和液或是填充材料)的流速降低,液體可以較緩慢地流入銲球與基板1之間所夾的銳角中,並排出銳角中的空氣,使液體完整地填充至銳角中,又基板1表面透過凹槽111的設置甚至可以破壞液體的表面張力,使液體順利地流入銳角中的縫隙,而不會將空氣擠壓在銳角中,且清潔基板1表面的助銲劑時可以減少皂化劑的使用,並達到破壞水的表面張力,節省皂化劑的成本。The connection area S2 is used to contact a plurality of solder balls 21 of a chip, so that the chip is fixed to the substrate 1 through the solder balls 21. The angle between the solder balls and the substrate 1 is less than 90 degrees. When cleaning flux or When filling the material, the flux cannot be cleaned completely due to the acute angle between the solder ball and the substrate 1, and the filling material cannot fill the space with the acute angle; when the surface of the substrate 1 is cleaned with a mixture of saponifier and water When the flux is used, or when filling material is used to fill the space between the substrate 1 and the chip, the flow rate of the liquid (mixed liquid of saponification agent and water or filling material) Lowering, the liquid can slowly flow into the acute angle between the solder ball and the substrate 1, and exhaust the air in the acute angle, so that the liquid can be completely filled into the acute angle, and the surface of the substrate 1 can even be damaged through the groove 111. The surface tension of the liquid allows the liquid to flow smoothly into the gaps in the acute angle without squeezing the air into the acute angle, and when cleaning the flux on the surface of the substrate 1, the use of saponifiers can be reduced, and the surface tension of water can be destroyed. Save the cost of saponification agent.

更明確地說,所述預定區S是指每一組凹槽單元11之中心S1至每一個凹槽111之最短距離L所圍成的圓形面積,故預定區的半徑即為L,其中圓形面積例如為正圓形或是橢圓形;更詳細而言,所述中心S1是指每一組凹槽單元11中各個凹槽111的共同中心,同時該中心S1也是預定區的圓心。晶片銲球21的黏附於基板1的預定區中,且銲球21與基板1的接觸表面為連接區S2。More specifically, the predetermined area S refers to the circular area enclosed by the shortest distance L from the center S1 of each group of groove units 11 to each groove 111, so the radius of the predetermined area is L, where The circular area is, for example, a perfect circle or an ellipse; in more detail, the center S1 refers to the common center of the grooves 111 in each group of groove units 11, and the center S1 is also the center of the predetermined area. The die solder balls 21 are adhered to a predetermined area of the substrate 1, and the contact surface of the solder balls 21 and the substrate 1 is the connection area S2.

如圖2所示,本創作較佳地在基板1的表面10上形成以四個凹槽111構成所述凹槽單元11,該四個凹槽111圍繞凹槽單元11的中心S1配置;例如,該四個凹槽111沿著圓周以等角度配置,使得四個凹槽111配置成呈十字形形態。As shown in Fig. 2, the present invention preferably forms the groove unit 11 with four grooves 111 on the surface 10 of the substrate 1, and the four grooves 111 are arranged around the center S1 of the groove unit 11; for example, The four grooves 111 are arranged at equal angles along the circumference, so that the four grooves 111 are arranged in a cross shape.

本創作的凹槽111的形狀的較佳實施可以例如為圓形或多邊形,其中該多邊形可以例如為三角形、四角形、五角形、六角形、八角形或是不規則的多邊形,在凹槽111為多邊形的實施例中,凹槽單元11的預定區S係為該複數個多邊形的外接圓所圍成的圓形區域,且預定區S與各多邊形的外接圓相切,各凹槽111的直徑即為其多邊形的外接圓的直徑,且複數個凹槽111採等角度或是非等角度分布環設於預定區S的外周圍。在其他實施例中,凹槽111環設於預定區S的分布密度為液體輸入端大於非液體輸入端,或是液體進入基板1及晶片之間時,液體流速高處的凹槽111環設密度大於液體流速低處,凹槽111的設置可有效平衡基板及晶片間的液體填充速度。The preferred implementation of the shape of the groove 111 of the present creation can be, for example, a circle or a polygon, where the polygon can be, for example, a triangle, a quadrangle, a pentagon, a hexagon, an octagon, or an irregular polygon, and the groove 111 is a polygon. In the embodiment, the predetermined area S of the groove unit 11 is a circular area surrounded by the circumscribed circle of the plurality of polygons, and the predetermined area S is tangent to the circumscribed circle of each polygon, and the diameter of each groove 111 is It is the diameter of the circumscribed circle of its polygon, and a plurality of grooves 111 are distributed around the predetermined area S with equal angles or non-equal angles. In other embodiments, the distribution density of the grooves 111 ringed in the predetermined area S is such that the liquid input end is greater than the non-liquid input end, or when the liquid enters between the substrate 1 and the wafer, the groove 111 where the liquid flow rate is high is ringed The density is greater than the low liquid flow rate, and the arrangement of the groove 111 can effectively balance the liquid filling speed between the substrate and the wafer.

在另一實施中,本創作的凹槽單元可以包含一個凹槽,且凹槽的形狀可以例如為一環型結構,該環形結構可以例如為圓環或多邊形的環狀結構,該多邊形的環狀結構可以例如為三角形、四角形、五角形、六角形、八角形或是不規則的多邊形,環形結構圍成一預定區,且預定區的圓心為環狀結構的圓心,當為多邊形的環狀結構時,預定區的圓心為多邊形的環狀結構的內圓心,且凹槽的厚度為環狀結構兩相對邊的垂直距離。In another implementation, the groove unit of the present creation may include a groove, and the shape of the groove may be, for example, a ring structure. The ring structure may be, for example, a circular ring or a polygonal ring structure. The structure can be, for example, a triangle, a quadrangle, a pentagon, a hexagon, an octagon or an irregular polygon. The ring structure encloses a predetermined area, and the center of the predetermined area is the center of the ring structure. When it is a polygonal ring structure , The center of the predetermined area is the inner center of the polygonal ring structure, and the thickness of the groove is the vertical distance between the two opposite sides of the ring structure.

再者,該等凹槽111的直徑或厚度較佳地小於基板2之兩個銲球21之間的間距的二分之一。Furthermore, the diameter or thickness of the grooves 111 is preferably less than half of the distance between the two solder balls 21 of the substrate 2.

晶片2上的複數個銲球21配置為對應基板1上之每一組凹槽單元11的中心S1;因此,如圖4及圖5所示,將配置有銲球21的晶片2倒裝於基板1的表面10上以將基板1與晶片2覆晶封裝時,各個銲球21是對應至凹槽單元11的預定區中心S1而黏附於基板1上的連接區S2形成電性連接;然後如圖5所示在基板1與晶片2之間填入填充材料(一般為環氧基液體材料),由於在銲球21的周邊的各個方向具有凹槽111,因此該等凹槽111提供了填充材料流動時的緩衝空間,從而可以平衡填充材料的流動性,減少覆晶封裝後產生空洞現象,確保產品可靠性,並且在進行清洗製程時讓水更容易深入銲球21與基板1之間的縫隙,進一步排除銲球21周圍的助焊劑,並降低皂化劑的使用,以降低製造成本。The plurality of solder balls 21 on the chip 2 are arranged to correspond to the center S1 of each set of groove units 11 on the substrate 1; therefore, as shown in FIGS. 4 and 5, the chip 2 with the solder balls 21 is flip-mounted on When the substrate 1 and the chip 2 are flip-chip packaged on the surface 10 of the substrate 1, each solder ball 21 corresponds to the predetermined area center S1 of the groove unit 11 and adheres to the connection area S2 on the substrate 1 to form an electrical connection; As shown in Figure 5, a filler material (generally an epoxy-based liquid material) is filled between the substrate 1 and the wafer 2. As there are grooves 111 in various directions around the solder ball 21, the grooves 111 provide The buffer space when the filling material flows, so as to balance the fluidity of the filling material, reduce voids after flip chip packaging, ensure product reliability, and make it easier for water to penetrate between the solder ball 21 and the substrate 1 during the cleaning process The gap is further eliminated the flux around the solder ball 21, and the use of saponification agent is reduced, so as to reduce the manufacturing cost.

以上所述者僅為用以解釋本創作之較佳實施例,並非企圖具以對本創作做任何形式上之限制,是以,凡有在相同之創作精神下所作有關本創作之任何修飾或變更,皆仍應包括在本創作意圖保護之範疇。The above are only used to explain the preferred embodiments of this creation, and are not intended to impose any formal restrictions on this creation. Therefore, any modification or change related to this creation made under the same creative spirit , Should still be included in the scope of this creative intention protection.

1:基板 10:表面 11:凹槽單元 111:凹槽 2:晶片 21:銲球 S: 預定區 S1:中心 S2:連接區 A:半導體元件 B:基板 B1:凹槽 C:銲料凸塊 D:底膠 E:銲球1: substrate 10: Surface 11: Groove unit 111: Groove 2: chip 21: Solder ball S: Reservation area S1: Center S2: Connection area A: Semiconductor components B: substrate B1: Groove C: Solder bump D: Primer E: Solder ball

圖1為顯示習知晶片封裝結構之示意圖; 圖2為顯示本創作之覆晶基板結構之俯視平面示意圖; 圖3為顯示本創作之覆晶基板結構之側視剖面示意圖; 圖4為顯示利用本創作之覆晶基板與晶片進行覆晶後之結構示意圖;以及 圖5為顯示利用本創作之覆晶基板與晶片進行覆晶後,銲球與凹槽之相對位置關係之平面示意圖。 FIG. 1 is a schematic diagram showing the structure of a conventional chip package; Figure 2 is a schematic top plan view showing the structure of the flip chip substrate of the present invention; Fig. 3 is a schematic diagram showing a cross-sectional side view of the flip-chip substrate structure of the present invention; FIG. 4 is a schematic diagram showing the structure after flip-chip is performed using the flip-chip substrate and chip of this creation; and FIG. 5 is a schematic plan view showing the relative positional relationship between solder balls and grooves after flip chip is performed with the flip chip substrate and chip of the present invention.

1:基板 1: substrate

111:凹槽 111: Groove

2:晶片 2: chip

21:銲球 21: Solder ball

Claims (10)

一種覆晶基板,具有一表面,其特徵在於: 該表面上形成有複數組凹槽單元,每一組該凹槽單元包含複數個凹槽,並且每一組該凹槽單元的該等凹槽共同在該表面上圍成一預定區,該預定區包含一連接區,該預定區的面積大於該連接區的面積,且該等凹槽環設於該預定區的外周圍。 A flip chip substrate has a surface and is characterized in: A plurality of groups of groove units are formed on the surface, each group of the groove units includes a plurality of grooves, and the grooves of each group of the groove units collectively enclose a predetermined area on the surface, the predetermined The area includes a connecting area, the area of the predetermined area is larger than the area of the connecting area, and the grooves are arranged around the predetermined area. 如請求項1所述之覆晶基板,其中,該等凹槽與該連接區之間具有一間距。The flip chip substrate according to claim 1, wherein there is a distance between the grooves and the connection area. 如請求項1所述之覆晶基板,其中,該連接區係用於與一晶片之複數銲球連接。The flip chip substrate according to claim 1, wherein the connection area is used to connect with a plurality of solder balls of a chip. 如請求項1所述之覆晶基板,其中,該每一組凹槽單元包含有四個該凹槽,該四個凹槽圍繞該凹槽單元的中心配置。The flip chip substrate according to claim 1, wherein each group of groove units includes four grooves, and the four grooves are arranged around the center of the groove unit. 如請求項4所述之覆晶基板,其中,該四個凹槽沿著圓周以等角度配置。The flip chip substrate according to claim 4, wherein the four grooves are arranged at equal angles along the circumference. 如請求項3項所述之覆晶基板,其中,該等凹槽的直徑小於該等銲球之間距的二分之一。The flip chip substrate according to claim 3, wherein the diameter of the grooves is less than half of the pitch between the solder balls. 一種覆晶封裝結構,包括: 一晶片,其一面具有複數個銲球; 一基板,具有一表面,該表面上形成有複數組凹槽單元,每一組該凹槽單元包含複數個凹槽,並且每一組該凹槽單元的該等凹槽共同在該表面上圍成一預定區,該預定區包含一連接區,該預定區的面積大於該連接區的面積,且該等凹槽環設於該預定區的外周圍; 其中,當該晶片覆晶於該基板上時,使每一個該銲球對應連接至該每一組凹槽單元的該連接區。 A flip chip packaging structure, including: A chip with a plurality of solder balls on one side; A substrate has a surface on which a plurality of groups of groove units are formed, each group of the groove units includes a plurality of grooves, and the grooves of each group of the groove units jointly surround the surface Forming a predetermined area, the predetermined area includes a connecting area, the area of the predetermined area is larger than the area of the connecting area, and the grooves are arranged around the predetermined area; Wherein, when the chip is flip-chip on the substrate, each of the solder balls is correspondingly connected to the connection area of each group of groove units. 如請求項7所述之覆晶封裝結構,其中,該等凹槽與該連接區之間具有一間距。The flip chip package structure according to claim 7, wherein there is a distance between the grooves and the connection area. 如請求項7所述之覆晶封裝結構,其中,該每一組凹槽單元包含有四個該凹槽,該四個凹槽圍繞該凹槽單元的中心配置。The flip chip package structure according to claim 7, wherein each group of groove units includes four grooves, and the four grooves are arranged around the center of the groove unit. 如請求項7所述之覆晶封裝結構,其中,該等凹槽的直徑小於該等銲球之間距的二分之一。The flip chip package structure according to claim 7, wherein the diameter of the grooves is less than half of the distance between the solder balls.
TW110204630U 2021-04-22 2021-04-26 Flip chip substrate and packaging structure thereof TWM618877U (en)

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