TWM618200U - Light emitting device - Google Patents

Abstract

A light emitting device includes a substrate, a first electrode disposed on the substrate, a second electrode disposed opposite to the first electrode and a light emitting layer disposed between the first electrode and the second electrode. The second electrode is formed of a plurality of conductive layer groups stacked on each other, each of the conductive layer groups includes a stack of a first conductive layer and a second conductive layer, and the material of the first conductive layer is different from the material of the second conductive layer.

Description

Light-emitting device

This creation relates to a light-emitting device, in particular to a light-emitting device with a higher light transmittance electrode design.

In recent years, light emitting diodes such as organic light emitting diodes (OLEDs) have become one of the development focuses in the field of display devices due to their advantages of low power consumption, long life, and high brightness. Generally speaking, if a metal material is used for the electrode in the light-emitting diode, there will be a problem of low light transmittance. As the user's demand for display devices gradually increases, how to improve the design of the electrode to increase its light transmittance or reduce the process requirements of the electrode is still one of the important issues in this field.

The present invention provides a light-emitting device, wherein the electrode of the light-emitting device can be formed by stacking a plurality of conductive layer groups. In this way, the compactness and uniformity of the conductive layer are effectively improved; at the same time, the electrode manufacturing process of the inventive light-emitting device can reduce the demand for the co-evaporation process, thereby improving the process flexibility. In addition, the electrodes in the inventive light-emitting device can have good light transmittance, thereby improving the display effect of the display device.

According to some embodiments, the present creation provides a light emitting device. The light-emitting device includes a substrate, a first electrode arranged on the substrate, a second electrode arranged opposite to the first electrode, and a light-emitting layer arranged between the first electrode and the second electrode. The second electrode is formed by stacking a plurality of conductive layer groups. Each conductive layer group includes a first conductive layer and a second conductive layer stacked, and the material of the first conductive layer is different from the material of the second conductive layer.

Those skilled in the art can understand this creation by referring to the following detailed description and combining the accompanying drawings. It should be noted that in order to make the readers understand and concise the schematics, the schematics of this creation are only drawn A part of the display device, and the specific elements in the drawings are not drawn according to actual scale. In addition, the number and size of each component in the figure are only for illustration, and are not used to limit the scope of this creation.

It should be understood that when an element or film layer is referred to as being "on" or "connected" to another element or film layer, it can be directly on or directly connected to the other element or film layer. So far, there is another element or film layer, or there is an intervening element or film layer in between. Conversely, when an element is said to be "directly" on or "directly connected" to another element or film layer, there is no intervening element or film layer between the two.

It should be noted that the following embodiments can replace, reorganize, and mix the technical features of several different embodiments without departing from the spirit of the creation to complete other embodiments.

Please refer to FIG. 1, which is a schematic cross-sectional view of the light-emitting device according to the first embodiment of the creation. The light-emitting device LD created by this invention can be applied to various display devices, such as notebook computers, public displays, spliced displays, car displays, touch displays, TVs, monitors, smart phones, tablet computers, light source modules, lighting The device or, for example, an electronic device applied to the above-mentioned product, but not limited to this. The light-emitting device LD of this embodiment may be an organic light-emitting diode. As shown in FIG. 1, the light emitting device LD may include a substrate SB, a first electrode E1, a light emitting layer LEL, and a second electrode E2. The first electrode E1 is disposed on the substrate SB, and the second electrode E2 is disposed opposite to the first electrode E1. , And the light-emitting layer LEL is disposed between the first electrode E1 and the second electrode E2. In detail, the first electrode E1, the light emitting layer LEL, and the second electrode E2 can be stacked on the substrate SB in sequence, but not limited to this.

The substrate SB may be a flexible substrate or a rigid substrate, including, for example, a glass substrate, a silicon substrate, and an organic material substrate. The substrate SB of this embodiment includes, for example, a soda lime glass substrate, but it is not limited thereto.

The light-emitting layer LEL may include any suitable organic material corresponding to the type of the light-emitting device LD. The light-emitting layer LEL of this embodiment includes, for example, a first material layer LE1, a second material layer LE2, a third material layer LE3, a fourth material layer LE4, and a fifth material layer LE5. The thickness of the first material layer LE1 is, for example, 2600. The thickness of the second material layer LE2 is, for example, 100 angstroms, the thickness of the third material layer LE3 is, for example, 250 angstroms, the thickness of the fourth material layer LE4 is, for example, 350 angstroms, and the thickness of the fifth material layer LE5 is, for example, It is 10 angstroms, but the thickness of each layer of the light-emitting layer LEL is not limited to the above. For example, the first material layer LE1 may include a hole injection layer material, the second material layer LE2 may include a hole transport layer material, the third material layer LE3 may include an organic light emitting layer material, and the fourth material layer LE4 may include electrons. The material of the transport layer, the fifth material layer LE5 may include the electron injection layer material. However, the number and arrangement of the above-mentioned material layers are only examples. These material layers can have other functions. According to the characteristics of the materials included in the light-emitting layer LEL, the light-emitting device LD can emit light of any color, such as red light, green light or blue light, but not limited to this.

According to this embodiment, one of the first electrode E1 and the second electrode E2 in the light emitting device LD may be the anode of the light emitting device LD, and the other may be the cathode of the light emitting device LD. For example, in this embodiment, the first electrode E1 may be, for example, the anode of the light emitting device LD, and the second electrode E2 may be, for example, the cathode of the light emitting device LD, but it is not limited thereto. The first electrode E1 of the light-emitting device LD of this embodiment may include a transparent conductive material, such as indium tin oxide (ITO), indium zinc oxide (IZO), other suitable transparent conductive materials, or those of the foregoing materials. Combination, but not limited to this. Under this design, the light generated by the light emitting device LD can emit light toward the lower side. For example, the lower side of the light emitting device LD or the lower surface of the substrate SB can be a light emitting surface or a display surface. In other embodiments, the first electrode E1 may include an opaque conductive material. In detail, the light-emitting device LD of this invention can be applied to a single-sided light-transmitting display device or a double-sided light-transmitting (transmissive) display device, and the materials of the first electrode E1 and the second electrode E2 can be based on the light-emitting device It is determined by the type of display device to which LD is applied. For example, when the light-emitting device LD is applied to a single-sided light-transmitting display device, one of the first electrode E1 or the second electrode E2 may be an opaque electrode, and the other may be a light-transmitting electrode When the light-emitting device LD is applied to a double-sided light-transmitting display device, the first electrode E1 and the second electrode E2 can both be light-transmitting electrodes, but it is not limited to this.

According to the present creation, the second electrode E2 of the light-emitting device LD may be formed by stacking a plurality of conductive layer groups CP, wherein each conductive layer group CP may respectively include at least two conductive layers of different materials. In other words, the second electrode E2 of the present invention can be formed by alternately stacking at least two conductive layers of different materials. For example, as shown in FIG. 1, the second electrode E2 of this embodiment may include two conductive layer groups CP, and each conductive layer group CP includes a first conductive layer C1 and a conductive layer disposed on the first conductive layer C1. The second conductive layer C2, that is, the second electrode E2 may include a structure formed by alternately stacking the first conductive layer C1 and the second conductive layer C2, but it is not limited thereto. It should be noted that the number of conductive layer groups CP included in the second electrode E2 and the number of conductive layers included in each conductive layer group CP in FIG. 1 are only exemplary, and the present creation is not limited thereto. In some embodiments, the second electrode E2 may be formed by stacking more than two conductive layer groups CP, or each conductive layer group CP may include more than two conductive layers. For example, in some embodiments, one conductive layer group CP may include two first conductive layers C1 and one second conductive layer C2, or the number is opposite, and the present invention is not limited to the above.

According to this creation, the material of the first conductive layer C1 and the material of the second conductive layer C2 in the conductive layer group CP are different or not completely the same, wherein the material of the first conductive layer C1 and the material of the second conductive layer C2 may include metal The materials are selected from magnesium, silver, aluminum, ytterbium, calcium, chromium, iron, cobalt, nickel, copper, molybdenum, ruthenium, indium, tungsten, tin, and zinc. Alternatively, the material of the first conductive layer C1 and the material of the second conductive layer C2 can also be selected from alloys of the above-mentioned metal materials. In some embodiments, one of the material of the first conductive layer C1 and the material of the second conductive layer C2 may be selected from molybdenum, ruthenium, indium, tungsten, tin, zinc oxide or molybdenum, ruthenium, indium, tungsten , Tin or zinc alloy oxide, and the other can be selected from the above-mentioned metal materials or alloys of metal materials. It should be noted that the foregoing description of the material for the first conductive layer C1 and the second conductive layer C2 is only exemplary, and the present creation is not limited thereto. The conductive layer in the conductive layer group CP of the second electrode E2 can have any suitable conductive material according to the actual product requirements of the light emitting device LD.

In addition to the above-mentioned film layers, the second electrode E2 of this embodiment may also include an auxiliary layer AL, which is arranged on the side of the second electrode E2 opposite to the light-emitting layer LEL, or is arranged on the opposite side of the light-emitting layer LEL. One side of the structure formed by stacking the conductive layer groups CP can also be said to be located outside the second electrode E2. According to this embodiment, the auxiliary layer AL may include any suitable oxide, nitride, oxynitride, or organic compound, but is not limited thereto. Since the second electrode E2 in this embodiment may include the auxiliary layer AL, it can provide the effect of stabilizing the charge of the light-emitting device LD, improve the optical properties of the light-emitting device LD, and provide the function of blocking water and oxygen.

It should be noted that although FIG. 1 shows a structure in which the second electrode E2 of the light-emitting device LD is formed by stacking a plurality of conductive layer groups CP, the present creation is not limited to this. In some embodiments, the electrode structure formed by stacking a plurality of conductive layer groups CP may be applied to the first electrode E1 instead of the second electrode E2, or the first electrode E1 and the second electrode E2 may both be composed of a plurality of conductive layers The group CP is stacked, wherein the material of the conductive layer in the conductive layer group CP in the first electrode E1 may be the same as or different from the material of the conductive layer in the conductive layer group CP in the second electrode E2. In addition, the elements and/or film layers included in the light-emitting device LD of the present creation are not limited to the structure shown in FIG. 1, and may also include other suitable elements and/or film layers.

According to this creation, the light transmittance of the second electrode E2 is affected by the thickness or material of the first conductive layer C1 and the second conductive layer C2. Therefore, the thickness of the conductive layer can be controlled to make the light transmittance of the second electrode E2 Within a specific range. For example, in this creation, when the material of the first conductive layer C1 is ytterbium (Yb) and the material of the second conductive layer C2 is silver (Ag) or magnesium (Mg), the thickness T1 of the first conductive layer C1 is The range can be 1 angstrom to 2000 angstroms, for example, from 30 angstroms to 300 angstroms, and the thickness T2 of the second conductive layer C2 can range from 1 angstrom (angstroms) to 1000 angstroms, for example, from 5 angstroms to 200 angstroms, but not less than This is limited. According to this embodiment, by adjusting the thickness T1 and the thickness T2, the second electrode E2 can have a high light transmittance. In detail, the first conductive layer C1 of this embodiment may include ytterbium, and the second conductive layer C2 may include silver. The thickness T1 of the first conductive layer C1 may be 100 angstroms, and the thickness T2 of the second conductive layer C2 may be It is 20 angstroms. In this case, the light transmittance of the second electrode E2 to light with a wavelength of 550 nanometers (nm) can reach about 69.1%, where the above light transmittance refers to the light transmittance measured from the side of the auxiliary layer AL . In contrast, the light transmittance measured from the side of the substrate SB is 69.0%, that is, the light transmittance of the first electrode E1 including the transparent conductive material is approximately the same as that of the second electrode E2. In addition, as shown in FIG. 2, FIG. 2 shows the light transmittance of the second electrode E2 of this embodiment (first embodiment) to light of different wavelengths. It can be seen from FIG. 2 that the second electrode E2 of this embodiment may have a light transmittance greater than 60% in the visible light region (for example, 390 nm to 780 nm). In short, the present invention can make use of the high light transmittance of the first conductive layer C1 and the low resistance characteristics of the second conductive layer C2 to be stacked on each other to form an electrode structure with high light transmittance and good conductivity.

As described above, the electrode of the light-emitting device LD of the present creation may include a structure formed by stacking a plurality of conductive layer groups CP, wherein the first conductive layer C1 and the second conductive layer C2 in the conductive layer group CP may be according to the light-emitting device LD The design requirements include any suitable conductive material. In this way, when the electrode of the light-emitting device LD includes more than one conductive material, the electrode manufacturing process of the light-emitting device LD of the present invention requires a co-evaporation process to be reduced, thereby improving the manufacturing flexibility of the light-emitting device LD. In addition, the density and uniformity of the conductive layer can be effectively improved. In detail, when the electrode of the light-emitting device LD to be formed includes materials that are not easy to use the co-evaporation process, the electrode structure design and formation method of this invention can be used to form a multi-conductive layer electrode including these materials, or when When the production cost of electrodes formed by the co-evaporation process is relatively high, the light-emitting device LD can be formed with electrodes of various conductive materials through the structural design of the present invention, thereby reducing the production cost. In other words, the electrode forming method of the present invention can be more widely applied to various electrode materials than traditional methods, thereby improving process flexibility. In addition, according to the present creation, since the electrode of the light-emitting device LD includes a plurality of stacked conductive layer groups CP, so that the material of the first conductive layer C1 and the material of the second conductive layer C2 are stacked on each other, it can be formed similar to the co-evaporated first The effect of the materials of the conductive layer C1 and the second conductive layer C2. In other words, the electrode manufacturing process of the present invention can achieve an effect similar to the co-evaporation process while reducing the demand for the co-evaporation process. Furthermore, since the second electrode E2 including a plurality of conductive layer groups CP in the light-emitting device LD can have good light transmittance by designing the material or thickness of the conductive layer of the conductive layer group CP, the upper side of the light-emitting device LD ( That is, the light-emitting effect of the second electrode E2 side can be improved, and when the light-emitting device LD is applied to a display device, the display effect of the second electrode E2 side thereof can be improved.

The content of other embodiments of the present creation will be described in detail below. In order to simplify the drawings, the same elements or film layers in the following embodiments will be marked with the same reference numerals, and the same features will not be repeated.

Please refer to Figure 2 and Table 1 below. Table 1 shows the thickness values and light transmittance of each conductive layer in the second electrode E2 of some embodiments and comparative examples of the invention. The relationship between the light wavelength and the light transmittance in the light-emitting devices of the comparative examples (the first example, the second example, the fifth example, and the second comparative example in Table 1). In the embodiments and comparative examples in Table 1, the material of the first conductive layer C1 is, for example, ytterbium, and the material of the second conductive layer C2 is, for example, silver, but the present creation is not limited to this. In addition, when measuring the light transmittance of the second electrode E2 of each embodiment and the comparative example in Table 1, only the structure formed by stacking the conductive layer groups CP in the second electrode E2 may be provided on the substrate SB (that is, alternately in FIG. 1 The first conductive layer C1 and the second conductive layer C2), and other elements or film layers (such as the first electrode E1, the light-emitting layer LEL, etc.) can be omitted, and the substrate SB can be glass, such as soda lime glass, but Not limited to this. Table 1 The thickness of each conductive layer and the light transmittance of the stacked structure Thickness (Å) The first conductive layer C1 (Yb) Second conductive layer C2 (Ag) The first conductive layer C1 (Yb) Second conductive layer C2 (Ag) The first conductive layer C1 (Yb) Second conductive layer C2 (Ag) Light transmittance (for 550nm wavelength light) The first embodiment 100 20 100 20 69.1% Second embodiment 100 5 100 5 - - 87.9% The third embodiment 100 10 100 10 - - 80.4% Fourth embodiment 30 10 30 10 30 10 67.0% Fifth embodiment 100 25 100 25 - - 59.8% First comparative example 100 50 100 50 - - 38.5% Second comparative example 100 100 100 100 - - 36.1% The third comparative example 30 200 30 200 - - 20.5%

For example, in the second embodiment, the second electrode E2 includes two conductive layer groups CP, and each conductive layer group CP includes a first conductive layer C1 (ytterbium) and a second conductive layer C2 (silver). The thickness T1 of a conductive layer C1 is 100 angstroms, the thickness T2 of the second conductive layer C2 is 5 angstroms, and the light transmittance of the second electrode E2 to light with a wavelength of 550 nm can reach 87.9%. The other embodiments can be interpreted in the same way, so they will not be described in detail. As shown in Table 1 and FIG. 2, the thickness T2 of the second conductive layer C2 and the light transmittance of the second electrode E2 are roughly inversely correlated. Since the first conductive layer C1 includes ytterbium with a higher light transmittance, and the second conductive layer C2 includes silver with a lower light transmittance, when the thickness T2 of the second conductive layer C2 increases, the second electrode E2 will be transparent. The light rate drops. Therefore, in some embodiments, the thickness T1 of the first conductive layer C1 can be designed to be greater than the thickness T2 of the second conductive layer C2, thereby increasing the light transmittance of the second electrode E2. For example, as shown in the second embodiment to the fifth embodiment in Table 1, the thickness T1 of the first conductive layer C1 including ytterbium may be greater than the thickness T2 of the second conductive layer C2 including silver, thereby increasing the second The light transmittance of the electrode E2, but not limited to this. According to the structural design of the present creation, according to the present creation, the thickness of the silver layer or the magnesium layer in the conductive layer group CP is preferably no more than 25 angstroms, or preferably no more than 20 angstroms. It can be seen from Table 1 and FIG. 2 that under the above-mentioned thickness T1 and thickness T2, the light transmittance of the stacked structure to light with a wavelength of 550 nm may be greater than or equal to 59.8%, or greater than or equal to about 60%. More preferably, under a design where the thickness T2 (ie, the metallic silver layer) does not exceed 20 angstroms, the light transmittance of the stacked structure to light with a wavelength of 550 nm can exceed 65%. In some embodiments, the first conductive layer C1 may include ytterbium with a higher light transmittance, and the second conductive layer C2 may include magnesium with a lower light transmittance, wherein the thickness T1 of the first conductive layer C1 may be greater than that of the second conductive layer C1. The thickness T2 of the conductive layer C2. In contrast, from the first comparative example to the third comparative example, the greater the thickness of the second conductive layer C2 containing metallic silver, the lower the light transmittance of the second electrode E2.

Please refer to FIG. 3, which is a schematic cross-sectional view of a light-emitting device according to an example of creation. In FIG. 3, the light-emitting layer LEL is shown as a single layer. For example, other subsequent embodiments are also the same, and will not be repeated here. As shown in FIG. 3, the second electrode E2 of the light emitting device LD may include a structure formed by stacking three conductive layer groups CP, and each conductive layer group CP may include a first conductive layer C1 and a second conductive layer C2, but not Limited by this. The materials and thicknesses of the first conductive layer C1 and the second conductive layer C2 of this exemplary embodiment may refer to the content of the fourth embodiment in Table 1, but are not limited thereto. That is, the first conductive layer C1 of the present exemplary embodiment may include ytterbium, the second conductive layer C2 may include silver, the thickness T1 of the first conductive layer C1 may be 30 angstroms, and the thickness T2 of the first conductive layer C2 may be 10 angstroms. In this case, the light transmittance of the second electrode E2 can reach 67.0%.

Please refer to FIG. 4, which is a schematic cross-sectional view of a light emitting device according to an example of creation. According to this exemplary embodiment, the second conductive layer C2 in the conductive layer group CP may be discontinuous, or may have an island-like structure, but it is not limited thereto. For example, when the second conductive layer C2 of the conductive layer group CP of the light emitting device LD is silver, and the thickness T2 (or the thickness of silver) of the second conductive layer C2 is less than 140 angstroms, the second conductive layer C2 It may exhibit an island-like structure due to the characteristics of silver or a relatively thin thickness (for example, less than 25 angstroms), and may include at least one groove RE. Since the second conductive layer C2 of this exemplary embodiment may include the groove RE, the auxiliary layer AL of the second electrode E2 may be filled in the groove RE of the second conductive layer C2 adjacent thereto, and the auxiliary layer AL may be provided at the same time The function of the flat layer still has a relatively flat upper surface, but it is not limited to this. It should be noted that although FIG. 4 only shows the feature that the second conductive layer C2 adjacent to the auxiliary layer AL includes the groove RE, it is only exemplary. In the modified structure, the second conductive layer in the light emitting device LD The layer C2 may all have an island structure and include grooves RE.

Please refer to FIG. 5, which is a schematic cross-sectional view of a light-emitting device according to an embodiment of the creation. According to this embodiment, as shown in FIG. 5, the second electrode E2 of the light emitting device LD may include a structure formed by stacking two conductive layer groups CP, wherein each conductive layer group CP includes a first conductive layer C1 and a second conductive layer. C2 and the third conductive layer C3, but not limited to this. In a variant embodiment, the light emitting device LD may include more than two conductive layer groups CP. In another modified embodiment, each conductive layer group CP may include more than three conductive layers. According to this embodiment, as shown in FIG. 5, the first conductive layer C1, the second conductive layer C2, and the third conductive layer C3 of the conductive layer group CP can be stacked in sequence, wherein the first conductive layer C1, the second conductive layer The materials of the layer C2 and the third conductive layer C3 may be different from each other, but are not limited thereto. For the material selection and thickness of the third conductive layer C3, please refer to the description of the first conductive layer C1 and the second conductive layer C2 above, so the details will not be repeated.

In summary, this creation provides a light-emitting device, wherein the electrode of the light-emitting device may include a structure formed by stacking a plurality of conductive layer groups, and each conductive layer group includes at least two conductive layers of different materials, so that the electrode has two layers. The above conductive layers are alternately stacked. The stacking of conductive layers of different materials can improve the selection flexibility of the material layers. For example, the stacking method can be designed according to the light transmittance, resistance, conductivity, adhesion, and process characteristics of the conductive layer. Conductive layers of different materials can be alternately formed by corresponding processes, instead of using a co-evaporation process with stricter process conditions. By controlling the stacking of multiple layers of different materials within a specific thickness range, it is possible to achieve an effect similar to co-evaporating these materials into one layer. Therefore, the electrode manufacturing process of the light-emitting device created by this invention can reduce the demand for the co-evaporation process, thereby improving The manufacturing process flexibility of the light-emitting device. In addition, the electrodes including a plurality of conductive layer groups in this creation can have good light transmittance, thereby improving the display effect of the display device.

AL: auxiliary layer C1: The first conductive layer C2: second conductive layer C3: third conductive layer CP: Conductive layer group E1: first electrode E2: second electrode LD: Light-emitting device LEL: luminescent layer LE1: The first material layer LE2: The second material layer LE3: The third material layer LE4: The fourth material layer LE5: fifth material layer RE: groove SB: Base T1, T2: thickness

FIG. 1 is a schematic cross-sectional view of the light-emitting device according to the first embodiment of the creation. Fig. 2 is a diagram showing the relationship between light wavelength and light transmittance in light-emitting devices according to different embodiments. Fig. 3 is a schematic cross-sectional view of a light emitting device according to an embodiment of the invention. 4 is a schematic cross-sectional view of a light emitting device according to an embodiment of the invention. Fig. 5 is a schematic cross-sectional view of a light emitting device according to an embodiment of the invention.

AL: auxiliary layer

C1: The first conductive layer

C2: second conductive layer

CP: Conductive layer group

E1: first electrode

E2: second electrode

LD: Light-emitting device

LEL: luminescent layer

LE1: The first material layer

LE2: The second material layer

LE3: The third material layer

LE4: The fourth material layer

LE5: fifth material layer

SB: Base

T1, T2: thickness

Claims (11)

A light emitting device includes: A base A first electrode arranged on the substrate; A second electrode arranged relative to the first electrode; and A light-emitting layer disposed between the first electrode and the second electrode; Wherein, the second electrode is composed of a plurality of stacked conductive layer groups, each of the conductive layer groups includes a first conductive layer and a second conductive layer that are stacked, and the material of the first conductive layer is different from the first conductive layer. The material of the second conductive layer. The light-emitting device according to claim 1, wherein the first conductive layers and the second conductive layers respectively comprise magnesium, silver, aluminum, ytterbium, calcium, chromium, iron, cobalt, nickel, copper, molybdenum, ruthenium, Indium, tungsten, tin, zinc or alloys of the above materials. The light-emitting device according to claim 1, wherein one of the first conductive layers and the second conductive layers includes molybdenum, ruthenium, indium, tungsten, tin, zinc oxide or molybdenum, ruthenium, indium, Oxides of alloys of tungsten, tin, or zinc. The light-emitting device according to claim 1, wherein the first electrode includes a transparent conductive material. The light-emitting device according to claim 1, wherein the second conductive layers are discontinuous. The light-emitting device according to claim 1, wherein the second electrode further includes an auxiliary layer disposed on a side of the second electrode opposite to the light-emitting layer. The light-emitting device according to claim 6, wherein the auxiliary layer includes an oxide, a nitride, an oxynitride, or an organic compound. The light-emitting device according to claim 6, wherein the second conductive layers are discontinuous and each include at least one groove, and the auxiliary layer is filled in the groove of the second conductive layer adjacent thereto. The light-emitting device according to claim 1, wherein the first conductive layer includes ytterbium, the second conductive layer includes silver or magnesium, and the thickness of the first conductive layer is greater than the thickness of the second conductive layer. The light-emitting device according to claim 1, wherein each of the conductive layer groups further includes a third conductive layer, the first conductive layer, the second conductive layer, and the third conductive layer are stacked in sequence, and the first conductive layer The material of the three conductive layers is different from the material of the first conductive layer and the material of the second conductive layer. The light-emitting device according to claim 1, wherein the light-emitting device is an organic light-emitting diode, and the light-emitting layer includes an organic light-emitting material.

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