TWM617230U - Vcsel apparatus - Google Patents

Abstract

This creation discloses a surface-fired laser device. The surface-emitting laser device is used to generate a laser beam, and includes an epitaxial laminate, a first electrode layer, and a second electrode layer. The first electrode layer and the second electrode layer are connected to the epitaxial laminate. The surface-emitting laser device includes an interfacial metal compound layer formed by using laser light to locally anneal the first electrode layer or the second electrode layer, which is located between the first electrode layer and the epitaxial laminate or is located on the second electrode layer Between the electrode layer and the epitaxial laminate, and the interface metal compound layer is connected to the epitaxial laminate. During the local annealing process, only the surface of the first or second electrode layer is heated, so the inside of the surface-emitting laser device will not be damaged due to high temperature changes in stress, which can effectively improve the yield.

Description

Surface-fired laser device

This creation relates to a laser device, in particular to a surface-fired laser device.

Compared with traditional side-fired lasers, vertical-cavity surface emitting lasers (VCSELs) have the advantages of lower power consumption and easier coupling with optical fibers, and have become the focus of attention. One of the light-emitting elements.

The existing vertical co-cavity surface-emitting laser includes at least a P-type electrode, an N-type electrode, an active layer for generating photons, and an upper Bragg reflector (Distributed Bragg Reflector, DBR) and a lower Bragg reflector. The P-type electrode and the N-type electrode are used to inject current into the active layer to excite photons, and the upper and lower two Bragg reflectors (Distributed Bragg Reflector, DBR) are used to form a vertical resonant cavity, which can be generated by the element surface ( That is, the laser beam emitted perpendicular to the direction of the active layer.

In the existing vertical co-cavity surface-emitting laser manufacturing process, a plurality of laminated structures that can be used to generate laser beams are first fabricated in a plurality of component regions on a semiconductor wafer, which include an active layer for generating photons And an upper Bragg reflector (Distributed Bragg Reflector, DBR) and a lower Bragg reflector on both sides of the active layer. After that, the semiconductor wafer is thinned from the back side of the semiconductor wafer, and two electrode layers are formed on the front and back sides of the semiconductor wafer, respectively.

However, every time the electrode layer is formed, the entire semiconductor wafer needs to be thermally annealed by furnace heating, so that each electrode layer can form a good ohmic contact with the lower Bragg reflector (or the upper Bragg reflector). Generally speaking, it usually needs to be heated to ^{above 400 o} C to form a good ohmic contact. However, since the thinned semiconductor wafer itself is easy to warp, and multiple epitaxial layers composed of different materials have been formed on the semiconductor wafer, it has a certain internal stress.

Especially for the production of oxidized VCSELs, an oxide layer used to limit current has been formed inside, and the thermal expansion coefficient difference between the oxide layer and other semiconductor materials is greater. Therefore, when the furnace tube is used to thermally anneal the entire semiconductor wafer, it is easy to increase the internal stress of the semiconductor wafer and cause the semiconductor wafer to crack and reduce the process yield. At the same time, thermal stress will remain inside the laser element, which will reduce the life of the element and affect its light-emitting characteristics. Therefore, how to avoid the above-mentioned problems and improve the process yield and component life of laser devices is still one of the important issues to be solved by this business.

The technical problem to be solved by this creation is to provide a surface-fired laser device for the shortcomings of the prior art, so as to avoid the increase of internal stress inside the surface-fired laser device, and have a better process yield and component life.

In order to solve the above technical problems, one of the technical solutions adopted in this creation is to provide a surface-emitting laser device, which includes an epitaxial laminate, a first electrode layer, a second electrode layer, and a local annealing process. The formed first interface metal compound layer. The epitaxial laminate includes a substrate, a first mirror layer, an active layer, and a second mirror layer. The first mirror layer, the active layer and the second mirror layer are located on the substrate, and the active layer is located between the first mirror layer and the second mirror layer to generate a laser beam. The first electrode layer is located on the epitaxial laminated body, and the second electrode layer is located on the second mirror layer. A current path through the active layer is defined between the second electrode layer and the first electrode layer, and the second electrode layer has an aperture for defining a light-emitting area. The first interface metal compound layer is located between the first electrode layer and the epitaxial laminate.

In order to solve the above technical problem, another technical solution adopted in this creation is to provide a laser device, which includes an epitaxial laminate, a first electrode layer and a second electrode layer, the first electrode The layer and the second electrode layer are connected to the epitaxial laminate, wherein the surface-emitting laser device further includes at least one interfacial metal compound layer formed by a local annealing treatment, which is located on the first electrode Between the layer and the epitaxial laminate or between the second electrode layer and the epitaxial laminate, and the interfacial metal compound layer is connected to the epitaxial laminate.

One of the beneficial effects of this creation is that the surface-emitting laser device provided by this creation can be positioned between the first electrode layer and the epitaxial laminate by "at least one interfacial metal compound layer formed by partial annealing" Or located between the second electrode layer and the epitaxial laminate", it can avoid increasing the internal stress of the surface-emitting laser device when forming ohmic contact, and can make the surface-emitting laser device have a longer component life And has stable light-emitting characteristics. During the partial annealing process, only the surface layer of the first or second electrode layer is heated, so the inside of the surface-emitting laser device will not be damaged due to high temperature changes in stress, which can effectively improve the yield.

In order to further understand the features and technical content of this creation, please refer to the following detailed descriptions and drawings about this creation. However, the drawings provided are only for reference and explanation, and are not used to limit this creation.

The following is a specific embodiment to illustrate the implementation of the "surface-emitting laser device" disclosed in this creation, and those skilled in the art can understand the advantages and effects of this creation from the content disclosed in this specification. This creation can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of this creation. In addition, the drawings of this creation are merely schematic illustrations, and are not depicted in actual size, and are stated in advance. The following implementations will further describe the related technical content of this creation in detail, but the disclosed content is not intended to limit the scope of protection of this creation. In addition, the term "or" used in this document may include any one or a combination of more of the associated listed items depending on the actual situation.

[First Embodiment]

Referring to FIG. 1 to FIG. 2, the first embodiment of the invention provides a surface-fired laser device. In this embodiment, the surface-fired laser device M1 is a vertical cavity surface-fired laser device. Furthermore, the surface-fired laser device M1 in FIG. 1 is an oxidized laser device, but this creation is not limited. The surface-emitting laser device M1 includes an epitaxial laminate 10, a first electrode layer 11, a second electrode layer 12, and at least one interfacial metal compound layer L1 (L2) formed by a local annealing process. Both an electrode layer 11 and a second electrode layer 12 are located on the epitaxial laminate 10.

In detail, the epitaxial laminate 10 includes a substrate 100, a first mirror layer 101, an active layer 102 and a second mirror layer 103. The first mirror layer 101, the active layer 102 and the second mirror layer 103 are all located on the substrate 100, and the active layer 102 is located between the first mirror layer 101 and the second mirror layer 103.

The substrate 100 may be a doped III-V semiconductor substrate, such as an N-type gallium arsenide (GaAs) substrate, an N-type arsenic phosphide (InP) substrate, and aluminum nitride (Aluminum Nitride, AIN). The base material or Indium Nitride (InN) base material. In addition, the substrate 100 has a top surface and a bottom surface opposite to the top surface. The first mirror layer 101, the active layer 102, and the second mirror layer 103 are sequentially disposed on the top surface of the substrate 100.

The first mirror layer 101 and the second mirror layer 103 may be a distributed Bragg reflector (Distributed Bragg Reflector, DBR) formed by alternately stacking two kinds of films with different refractive coefficients, so that a light beam with a predetermined wavelength is emitted .

Both the first mirror layer 101 and the second mirror layer 103 are formed by stacking multiple pairs of film layers with high refractive index and film layers with low refractive index. In one embodiment, the first mirror layer 101 is an n-type distributed Bragg mirror, and the second mirror layer 103 is a p-type distributed Bragg mirror.

The active layer 102 is formed on the first mirror layer 101 and includes multiple layers for forming multiple quantum wells. _y Ga _(1-y) As) film. The active layer 102 is located between the first mirror layer 101 and the second mirror layer 103 for being excited by electrical energy to generate an initial light beam. The initial light beam generated by the active layer 102 is gain-amplified by reflecting and resonating back and forth between the first mirror layer 101 and the second mirror layer 103, and is finally emitted from the second mirror layer 103.

In this creative embodiment, the cross-sectional width of the second mirror layer 103 and the active layer 102 is smaller than the cross-sectional width of the first mirror layer 101 (or the substrate 100) to form a platform portion 10a, and the first mirror layer 101 and the substrate 100 together form a base portion 10b. Accordingly, the base portion 10b at least includes the substrate 100 and the first mirror layer 101, and the platform portion 10a at least includes the active layer 102 and the second mirror layer 103.

In addition, in this embodiment, the epitaxial laminate 10 further includes a current confinement layer 104. The current confinement layer 104 is located in the second mirror layer 103 and has a confinement hole 104H corresponding to the light-emitting area A1. The current confinement layer 104 in the second mirror layer 103 will have a higher resistance value, thereby driving the current to bypass the current confinement layer 104 with a high resistance value and only pass through the confinement hole 104H. Accordingly, the current density of the current injected into the active layer 102 can be increased. In one embodiment, the current limiting layer 104 may be formed by oxidizing one of the layers in the second mirror layer 103 through a side oxidation process.

Furthermore, the epitaxial laminate 10 of this creative embodiment has at least one oxide trench H1, and the oxide trench H1 extends from the second mirror layer 103 toward the substrate 100. In an embodiment, the depth of the oxide trench H1 may be greater than the thickness of the second mirror layer 103. In another embodiment, the depth of the oxide trench H1 may be greater than or equal to the sum of the thickness of the second mirror layer 103 and the active layer 102. In other words, the oxide trench H1 will extend toward the substrate 100 into the first mirror layer 101 under the active layer 102.

In addition, in this embodiment, a top view shape of the oxidation trench H1 is ring-shaped and surrounds the platform portion 10a. Accordingly, one of the sidewalls of the oxide trench H1 is the sidewall of the terrace portion 10a. In other embodiments, the number of the oxidation trenches H1 is multiple, and they are arranged around the terrace portion 10a.

In this embodiment, the aforementioned current limiting layer 104 is formed by performing an oxidation process. Specifically, among the multiple film layers of the second mirror layer 103, there is at least one layer with high aluminum content. Therefore, when the oxidation process is performed, the high aluminum content layer is easily oxidized from the portion exposed on the sidewall of the oxidation trench H1 to form the current limiting layer 104. Accordingly, the current confinement layer 104 extends radially from the sidewall of the oxide trench H1 to below the second electrode layer 12, thereby defining a confinement hole 104H. However, in other embodiments, the current confinement layer 104 may also be a hydrogen ion implanted layer formed in the second mirror layer 103 by a high-energy hydrogen ion implantation method.

Please continue to refer to FIG. 1, the first electrode layer 11 and the second electrode layer 12 are both located on the epitaxial laminate 10, and between the first electrode layer 11 and the second electrode layer 12 is defined an active layer 102 Current path.

In this embodiment, the first electrode layer 11 and the second electrode layer 12 are respectively located on opposite sides of the substrate 100. Furthermore, the first electrode layer 11 is located on the bottom surface of the substrate 100, and the second electrode layer 12 is located on the second mirror layer 103. That is, the second electrode layer 12 is located on the island-shaped terrace portion 10a, and the first electrode layer 11 is located on the base portion 10b. The first electrode layer 11 and the second electrode layer 12 may be a single metal layer, an alloy layer, or a stacked layer composed of different metal materials. At least one of the first electrode layer 11 and the second electrode layer 12 has an intermetallic compound (IMC) layer formed by a local annealing process.

Please refer to FIG. 1, the first interfacial metal compound layer L1 is located between the first electrode layer 11 and the epitaxial laminate 10.

2, in detail, the first electrode layer 11 of this embodiment includes a first metal layer 110a, a second metal layer 110b, and a third metal layer 110c connected to the first interface metal compound layer L1, and the second The metal layer 110b is located between the first metal layer 110a and the third metal layer 110c. That is to say, in this creative embodiment, the first electrode layer 11 is a laminated structure formed by three metal layers. The material of the first metal layer 110a is, for example, germanium gold, and the material of the second metal layer 110b and the third metal layer 110c is, for example, gold, copper, palladium, titanium, germanium, tungsten, or any combination thereof. In another embodiment, the first electrode layer 11 may also include only two metal layers, as long as it can form an ohmic contact with the epitaxial laminate 10, the present invention does not limit the material and structure of the first electrode layer 11 .

It is worth mentioning that in this creative embodiment, after the first electrode layer 11 is formed on the bottom surface of the substrate 100, the first electrode layer 11 and the substrate 100 are then locally annealed to promote the first electrode layer 11 It reacts with the substrate 100 to form a first interfacial metal compound layer L1 between the first electrode layer 11 and the substrate 100. Accordingly, the first interface metal compound layer L1 includes at least two types of atoms, one of which is the same type of atoms as the first metal layer 110a. The other type of atoms contained in the first interface metal compound layer L1 may be the same type as that of the base material 100.

For example, if the material of the first metal layer 110a is germanium and the material of the substrate 100 is gallium arsenide, the first interface metal compound layer L1 will contain germanium atoms, arsenic atoms, and gallium atoms. But this creation is not limited to this example.

In addition, in this creative embodiment, a laser is used to locally anneal the first electrode layer 11 and the substrate 100 to form a good ohmic contact while forming the first interface metal compound layer L1. The temperature of the other parts of the epitaxial stack 10, including the first mirror layer 101, the second mirror layer 103, and the active layer 102, will not be raised during the aforementioned heating process, so the increase in the epitaxial stack can be avoided. The internal stress of the body 10. In this way, it can be avoided that the internal stress of the epitaxial laminated body 10 is too high due to heating, which affects the lifetime or light emission characteristics of the surface-emitting laser device M1. In addition, if the internal stress of the epitaxial laminate 10 is too high, it may also affect the ability of the surface-emitting laser device M1 to resist electrostatic discharge (ESD). Therefore, it is also possible to reduce the internal stress of the epitaxial laminate 10 Increase the ability of surface-fired laser device M1 to resist electrostatic discharge.

The thickness of the first electrode layer is between 4000 Å and 10000 Å, and the thickness of the first interface metal compound layer L1 is between 200 Å and 300 Å. In addition, the surface roughness of the first electrode layer 11 is between 0.2 μm and 1.0 μm.

In one embodiment, before performing the local annealing treatment, the surface roughness of the first electrode layer 11 is about 0.5 μm to 1 μm. After the partial annealing process is performed, the surface roughness of the first electrode layer 11 is approximately 0.2 μm to 0.5 μm, and the surface roughness of the first interface metal compound layer L1 is also between 0.2 μm and 0.5 μm. That is, after the partial annealing treatment is performed, the surface roughness of the first electrode layer 11 can be reduced. In another embodiment, if the first electrode layer 11 itself already has a relatively low surface roughness (about 0.2 μm to 0.5 μm), the surface roughness of the first electrode layer 11 will not be There are too many changes.

Please refer to FIG. 3 first, which is an electron micrograph of the electrode layer and the epitaxial laminate of the creative embodiment. The scanning electron microscope photograph of FIG. 3 shows one of the cross-sections of the substrate 100 and the first electrode layer 11 in this creative embodiment. The first interface metal compound layer L1 of the creative embodiment has a relatively large surface morphology in a local area.

In addition, the substrate 100 to form an ohmic contact with the preferred first electrode layer 11, the heating temperature of at least 400 ^o C, or even higher temperatures. However, in the prior art, to the entire heating furnace tube epitaxial laminate for an epitaxial laminate subject to withstand temperatures of 10, but only heated to 400 ^o C.

However, in this creative embodiment, when the laser is used for local heating, only the temperature at the interface between the substrate 100 and the first electrode layer 11 will rise ^{above 400 o} C, without causing the epitaxial stack The other parts of the body 10 (such as the first and second mirror layers 101, 103 and the active layer 102) are simultaneously heated to an excessively high temperature. Therefore, not only can an ohmic contact with lower impedance be formed between the first electrode layer 11 and the substrate 100, but also an increase in the internal stress of the epitaxial laminate 10 can be avoided. In one embodiment, when the ohmic contact is formed between the first electrode layer 11 and the epitaxial laminate 10 without the thermal annealing process, the voltage Vf to be applied to drive the surface-emitting laser is between 5.0V (Volt) To 7.0V (Volt). After the ohmic contact is formed through the thermal annealing process, the voltage (Vf) to be applied to drive the surface-emitting laser can be reduced, and is approximately 1.5V (Volt) to 2.5V (Volt).

Please refer to FIG. 1 again. In the embodiment of FIG. 1, the second electrode layer 12 has an aperture (not numbered) for defining a light-emitting area A1, and the aperture corresponds to the confined hole 104H of the aforementioned current confinement layer 104. In this way, the laser beam generated by the active layer 102 can be emitted from the aperture. In an embodiment, the second electrode layer 12 has a ring-shaped portion.

In the embodiment of FIG. 1, the surface-emitting laser device M1 further includes a second interface metal compound layer L2 formed by a local annealing process. The second interface metal compound layer L2 is located between the second electrode layer 12 and the second mirror layer 103. The material of the second electrode layer 12 may be gold, tungsten, germanium, palladium, titanium or any combination thereof. In another embodiment, the second electrode layer 12 has a laminated structure similar to that of the first electrode layer 11, that is, includes at least two metal layers, which is not limited in the present creation.

In addition, similar to the first interfacial metal compound layer L1, the second interfacial metal compound layer L2 is formed by locally heating the second electrode layer 12 and the second mirror layer 103 by a laser. Accordingly, the second interface metal compound layer L2 contains at least two kinds of atoms, one of which is the same type of atoms as the second electrode layer 12. The other type of atoms contained in the second interface metal compound layer L2 may be the same type as the type of atoms in the second mirror layer 103.

For example, if the material of the second electrode layer 12 is a germanium-gold alloy, and the material of the topmost layer of the second mirror layer 103 is aluminum gallium arsenide, the second interface metal compound layer L2 may include gold atoms, germanium atoms , Arsenic, aluminum and gallium atoms, but this creation is not limited to this.

In addition, since the second electrode layer 12 includes a ring portion, the second interfacial metal compound layer L2 formed between the second mirror layer 103 and the second electrode layer 12 will also have a ring shape and surround the light-emitting area A1.

Please continue to refer to Figure 1. The surface-emitting laser device M1 of this creative embodiment further includes a current spreading layer 13 which is located on the second mirror layer 103 and is electrically connected to the second electrode layer 12. In an embodiment, the material constituting the current spreading layer 13 is a conductive material, so that the current injected into the active layer 102 from the second mirror layer 103 is uniformly distributed. In addition, the material constituting the current spreading layer 13 is a material that can be penetrated by the laser beam, so as to avoid overly sacrificing the luminous efficiency of the surface-emitting laser device M1. For example, when the wavelength of the laser beam is 850 nm, the material constituting the current spreading layer 13 may be a doped semiconductor material, such as heavily doped gallium arsenide.

In addition, the surface-emitting laser device M1 of this creative embodiment further includes a protective layer 14 and a flat layer PL. The protective layer 14 covers the light-emitting area A1 and conformally covers the inner wall surface of the oxide trench H1 to prevent water vapor from invading the inside of the epitaxial stack 10 and affecting the light-emitting characteristics or life of the surface-emitting laser device M1. In one embodiment, the protective layer 14 can be made of moisture-resistant material, such as silicon nitride, aluminum oxide, or a combination thereof, which is not limited in the present invention.

The flat layer PL is filled in the oxide trench H1. In an embodiment, the top surface of the flat layer PL is substantially flush with the top surface of the epitaxial laminate 10. The material of the flat layer PL is a polymer material, such as polyimide (PI), Benzocyclobutene (BCB) or other suitable materials, but this creation is not limited.

It should be noted that in the embodiment of FIG. 1, the first electrode layer 11 and the second electrode layer 12 are respectively located on different sides of the substrate 100. However, in other embodiments, the first electrode layer 11 and the second electrode layer 11 The electrode layers 12 may all be located on the same side of the substrate 100.

Please refer to FIG. 4, which is a schematic cross-sectional view of the laser device according to the second embodiment of the creation. The same components of the surface-emitting laser device M2 of this embodiment and the surface-emitting laser device M1 of the first embodiment have the same reference numerals, and the same parts will not be repeated.

As shown in FIG. 4, the first electrode layer 11 and the terrace portion 10a are both located on the base portion 10b, so the first electrode layer 11 and the second electrode layer 12 are located on the same side of the substrate 100. In this embodiment, the first electrode layer 11 surrounds the mesa portion 10a and is disposed on the top surface of the first mirror layer 101. In addition, the first interface metal compound layer L1 is located between the first mirror layer 101 and the first electrode layer 11. Accordingly, in this embodiment, the first interface metal compound layer L1 will surround the platform portion 10a in a ring shape.

Therefore, as long as a current path through the active layer 102 can be generated between the first electrode layer 11 and the second electrode layer 12, the present invention does not limit the positions where the first electrode layer 11 and the second electrode layer 12 are arranged. In addition, in this creative embodiment, a laser can be used to locally anneal the first electrode layer 11 and the second electrode layer 12 on the same side, and the first electrode layer 11 and the first mirror layer can be made in the same process. A good ohmic contact is formed between 101 and between the second electrode layer 12 and the second mirror layer 103, and the first and second interface metal compound layers L1, L2 are formed.

[Beneficial effects of the embodiment]

One of the beneficial effects of this creation is that the surface-emitting laser devices M1, M2 provided by this creation can pass through "the first electrode layer 11 includes a first conductive layer 110 and a first interface formed by partial annealing. The metal compound layer L1, the first interface metal compound layer L1 is located between the first electrode layer 11 and the epitaxial laminate 10" or "at least one of the first electrode layer 11 or the second electrode layer 12 has a local The technical solution of an interfacial metal compound layer L1 (L2) formed by annealing treatment can reduce the impedance between the first electrode layer 11 and the epitaxial laminate 10 and the internal stress of the epitaxial laminate 10.

In addition, this creation uses a laser to locally heat the first electrode layer 11 and the substrate 100 (or the second electrode layer 12 and the second mirror layer 103) to form an ohmic contact, and the first interface metal is also formed. The compound layer L1 (or the second interface metal compound layer L2). Therefore, except for the specific area heated by the laser, other areas of the epitaxial laminate 10 are not heated at the same time. In this way, the surface-fired laser devices M1 and M2 can be prevented from being broken due to excessive internal stress, thereby improving the process yield. In other words, only the surface layers of the first or second electrode layers 11, 12 are heated during the partial annealing process, so the surface-emitting laser devices M1, M2 will not undergo stress changes due to high temperature and cause damage. In turn, the yield can be effectively improved.

On the other hand, it can also avoid that the internal stress of the epitaxial laminate 10 is too high, which will affect the lifetime or light-emitting characteristics of the surface-emitting laser devices M1, M2. In addition, reducing the internal stress of the epitaxial laminate 10 can also increase the resistance of the surface-emitting laser devices M1, M2 to electrostatic discharge.

Especially when the laser devices M1 and M2 are oxidized vertical co-cavity surface-emitting laser devices, since the current confinement layer 104 in the epitaxial stack 10 is an oxide layer, the oxide layer and other semiconductor epitaxial layers The difference in thermal expansion coefficient makes it easier to accumulate internal stress during the heating and cooling process. However, the above-mentioned problems can be avoided by using the technical means of this creation.

The content disclosed above is only a preferred and feasible embodiment of this creation, and does not limit the scope of patent application for this creation. Therefore, all equivalent technical changes made using this creation specification and schematic content are included in the application for this creation. Within the scope of the patent.

M1, M2: Surface-fired laser device 10: epitaxial laminate 10a: Platform Department 10b: base part 100: Substrate 101: first mirror layer 102: active layer 103: second mirror layer 104: Current Limitation Layer 104H: Limited hole 11: The first electrode layer 110a: the first metal layer 110b: second metal layer 110c: third metal layer L1: The first interface metal compound layer 12: The second electrode layer L2: The second interface metal compound layer 13: Current spreading layer 14: protective layer PL: Flat layer A1: Light-emitting area H1: Oxidation trench

FIG. 1 is a schematic cross-sectional view of a surface-fired laser device according to the first embodiment of the creation.

Fig. 2 is an enlarged schematic diagram of part II of Fig. 1.

Fig. 3 is an electron micrograph of the electrode layer and the epitaxial laminated body of the creative embodiment.

4 is a schematic cross-sectional view of the surface-fired laser device according to the second embodiment of the creation.

M1: Surface-fired laser device

10: epitaxial laminate

10a: Platform Department

10b: base part

100: Substrate

101: first mirror layer

102: active layer

103: second mirror layer

104: Current Limitation Layer

104H: Limited hole

11: The first electrode layer

L1: The first interface metal compound layer

12: The second electrode layer

L2: The second interface metal compound layer

13: Current spreading layer

14: protective layer

PL: Flat layer

A1: Light-emitting area

H1: Oxidation trench

Claims (15)

A surface-emitting laser device includes: an epitaxial laminate, which includes a substrate, a first mirror layer, an active layer, and a second mirror layer, wherein the first mirror Layer, the active layer and the second mirror layer are located on the substrate, and the active layer is located between the first mirror layer and the second mirror layer to generate a laser Light beam; a first electrode layer, which is located on the epitaxial laminate; a second electrode layer, which is located on the second mirror layer, wherein the second electrode layer and the first electrode A current path through the active layer is defined between the layers, and the second electrode layer has an aperture for defining a light-emitting area; and a first interface metal compound layer formed by a local annealing process, The first interfacial metal compound layer is located between the first electrode layer and the epitaxial laminate. The surface-emitting laser device according to claim 1, wherein the first interface metal compound layer is located between the substrate and the first electrode layer, and the first electrode layer includes the first electrode layer and the first electrode layer. A first metal layer, a second metal layer, and a third metal layer are connected to an interface metal compound layer, and the second metal layer is located between the first metal layer and the third metal layer. The surface-emitting laser device according to claim 2, wherein the first interface metal compound layer contains at least two kinds of atoms, one of which is the same as that of the first metal layer, and the other The type of the atom is the same as that of the base material. The surface-emitting laser device according to claim 1, wherein the thickness of the first electrode layer is between 4000 Å and 10000 Å, and the surface roughness of the first electrode layer is between 0.2 μm and 0.5 μm . The surface-emitting laser device according to claim 1, wherein the thickness of the first interface metal compound layer is between 200 Å and 300 Å. The surface-emitting laser device according to claim 1, further comprising: a second interface metal compound layer formed by partial annealing treatment, the second interface metal compound layer being located between the second electrode layer and the second electrode layer. Between the second mirror layer. The surface-emitting laser device according to claim 1, wherein the cross-sectional width of the second mirror layer and the active layer is smaller than the cross-sectional width of the first mirror layer to jointly form a platform portion, and The first mirror layer and the substrate together form a base. The surface-emitting laser device according to claim 7, wherein the first electrode layer and the second electrode layer are both located on the same side of the substrate, and the first interface metal compound layer is located The space between the first electrode layer and the first mirror layer and surrounding the platform portion is in a ring shape. The surface-emitting laser device according to claim 1, wherein the epitaxial laminate has an oxide trench, and the oxide trench extends from the second mirror layer toward the substrate. The surface-emitting laser device according to claim 9, wherein the epitaxial laminate further includes a current confinement layer, and the current confinement layer extends from a sidewall of the oxide trench to the second Below the electrode layer, a limited hole corresponding to the light-emitting area is defined. The surface-emitting laser device according to claim 9, further comprising a flat layer, and the flat layer is filled in the oxide trench. A surface-emitting laser device, comprising an epitaxial laminate, a first electrode layer and a second electrode layer, the first electrode layer and the second electrode layer are connected to the epitaxial laminate Body, characterized in that, the surface-emitting laser device further includes at least one interfacial metal compound layer formed by a local annealing treatment, and its position Between the first electrode layer and the epitaxial laminate or between the second electrode layer and the epitaxial laminate, and the interfacial metal compound layer is connected to the epitaxial laminate Layer body. The surface-emitting laser device according to claim 12, wherein the interface metal compound layer is located between the first electrode layer and the epitaxial laminate. The surface-emitting laser device according to claim 12, wherein the thickness of the first electrode layer is between 4000 Å and 10000 Å, and the surface roughness of the first electrode layer is between 0.2 μm and 0.5 μm . In the surface-emitting laser device according to claim 12, the thickness of the interface metal compound layer is between 200 Å and 300 Å.

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