TWM616188U - Plasma processing apparatus with a function for distributing and adjusting radio frequency power - Google Patents

Abstract

This creation discloses a plasma processing device, including: a reaction chamber; a base on which an electrostatic chuck for fixing the substrate to be processed is provided, a source radio frequency power supply connected to the base or a gas shower head, and a The bias RF power supply is connected to the base; the gas shower head is used to introduce gas into the reaction chamber, and the plasma processing area is between the gas shower head and the base; the focusing ring surrounds the electrostatic chuck and performs plasma processing Exposure to plasma during the process; the ring electrode is arranged under the focusing ring; the conductor ring is arranged under the base and is electrically connected to the ring electrode through the conductor connection part; the impedance adjusting component is arranged under the base, and the impedance The adjustment component includes a plurality of capacitors and a plurality of relays, each relay is electrically connected to a single capacitor to control the conduction state of the single capacitor, the impedance adjustment component is electrically connected to the base, and the conductor connection part is electrically connected to the impedance adjustment component and the conductor ring .

Description

Plasma processing device with radio frequency power distribution adjustment function

This creation relates to the technical field of plasma etching, in particular to a plasma processing device with a radio frequency power distribution adjustment function.

In plasma etching equipment, the gas shower head can be used as the upper electrode, the base can be used as the lower electrode, and a source RF power supply is connected to the upper electrode or the lower electrode, and a bias RF power supply is connected to the lower electrode. The high frequency radio frequency power output by the source radio frequency power supply is used to ignite and maintain the plasma in the reaction chamber, and the low frequency radio frequency power output by the bias radio frequency power supply is used to control the thickness of the sheath formed on the upper surface of the substrate and the upper surface of the focusing ring.

However, since the focus ring remains in the plasma filled with etching gas for a long time, after a certain period of plasma treatment, the surface material of the focus ring will be corroded, so the height of the upper surface of the focus ring will decrease accordingly. It will seriously affect the distribution and morphology of the sheath in the edge area of the substrate, and cause the edge tilting of the etching rate and etching direction in the edge area of the substrate and the central area of the substrate (edge tilting), which reduces the uniformity of substrate processing and affects the final wafer. Yield.

In the prior art, the low-frequency RF power input by the bias RF power supply can only be partially compensated to the focus ring to lift the sheath above the focus ring, so this compensation can only be maintained for a short time.

Therefore, it is necessary to develop a new adjustment device to more effectively adjust the RF power coupled to the focus ring, so as to maintain a longer period of time to compensate for the corrosion of the focus ring, so as to improve the uniformity of the substrate processing process.

In view of this, the present invention provides a plasma processing device that adjusts the RF power in the edge area of the substrate through an impedance adjustment component to compensate for the edge tilting of the substrate edge caused by the loss of the focus ring during long-term use.

In order to achieve the above objective, this creation provides a plasma processing device with radio frequency power distribution adjustment function, including: a reaction chamber surrounded by a plurality of walls; a base arranged below the reaction chamber, and an electrostatic chuck is arranged on the base , The electrostatic chuck is used to fix the substrate to be processed, a source radio frequency power supply is connected to the base or gas shower head, and a bias radio frequency power supply is connected to the base; the gas shower head set above the reaction chamber is used for Introduce gas into the reaction chamber, between the gas shower head and the base is the plasma processing area; the focusing ring, which surrounds the electrostatic chuck and is exposed to the plasma during the plasma processing; the ring electrode is arranged under the focusing ring; The conductor ring is arranged under the base, and the conductor ring is electrically connected with the ring electrode through the conductor connection part; the impedance adjusting component is arranged under the base.

Among them, the impedance adjustment component includes a plurality of capacitors and a plurality of relays, each relay is electrically connected to a single capacitor to control the conduction state of the single capacitor, the impedance adjustment component is electrically connected to the base, and the conductor connection part is electrically connected to the impedance adjustment component With conductor loop.

Preferably, the number of capacitors is at least two, the number of relays is also at least two and equal to the number of capacitors, and a single relay is electrically connected to a single capacitor.

Preferably, the capacitance value of each capacitor may be the same or different.

Preferably, the relay is connected to the controller through a control line, and the controller is used to control the switch of each relay.

Preferably, the impedance adjusting component further includes an inductor, and the inductor is electrically connected to the base.

Preferably, the inductor is a low-pass filter to prevent the high frequency radio frequency power output by the source radio frequency power supply from coupling to the focus ring, while the low frequency radio frequency power output by the bias radio frequency power supply can still be coupled to the focus ring.

Preferably, the ring electrode is a coupling ring, and the coupling ring is made of highly conductive materials such as aluminum and silicon carbide.

Preferably, the plasma processing device further includes a coupling ring made of insulating material, the coupling ring is arranged below the focusing ring, and the ring electrode is arranged in the coupling ring or between the coupling ring and the focusing ring.

Preferably, the impedance adjusting component includes a gas spray frame, which is arranged on the peripheral side of the capacitor, and the wall surface of the gas spray frame facing the capacitor is provided with a plurality of gas nozzles. And its surrounding ambient temperature.

Preferably, a gas volume area is excavated in the gas spray frame, and the gas nozzle is connected with the gas volume area.

Preferably, the impedance adjusting component communicates with the gas device through a gas pipe, and a valve is arranged on the gas pipe to control the gas flow into the gas volume area.

Preferably, the gas introduced is dry compressed gas.

Preferably, the impedance adjusting component includes a ceramic plate, and the capacitor and the gas spray frame are fixed on the ceramic plate.

Preferably, the impedance adjusting component includes a fixing frame, one end of the fixing frame is connected to the ceramic plate, and the other end is connected to the base, so as to fix the impedance adjusting component to the base as a whole.

Preferably, the conductor ring is made of copper.

Preferably, the frequency of the radio frequency signal output by the bias radio frequency power supply is less than 13 MHz.

Preferably, the source radio frequency power supply outputs high frequency radio frequency power to the reaction chamber, so that the reaction gas sprayed into the reaction chamber through the gas shower head generates plasma, and the frequency of the radio frequency signal output by the source radio frequency power source is greater than 13 MHz.

Compared with the prior art, the technical solution provided by this creation has at least the following advantages: the impedance adjustment component provided by this creation includes a plurality of capacitors and a plurality of relays, and each relay is electrically connected to a single capacitor to control the conduction state of the single capacitor, When the focus ring is worn out, the degree of loss of the focus ring can be monitored, and the required number of capacitors can be electrically turned on, and the thickness of the sheath above the focus ring can be adjusted so that the edge of the substrate and the top of the focus ring have the same A high degree of sheath to improve etching uniformity. In addition, multiple capacitors with different capacitance values can be selected, which is more conducive to compensating the loss of the corresponding focus ring through the selection of capacitors. In addition, the impedance adjusting component is provided with a gas spray frame, and the cooling gas can be filled into the gas spray frame to blow air into the environment where the capacitor is located to reduce the temperature of the environment, which is beneficial to the long-term stable operation of the capacitor.

10,110: reaction chamber

20, 120: Gas sprinkler

30,130: isolation ring

40,140: Pedestal

41,141: Electrostatic chuck

42,142: coupling ring

43,43: focus ring

144: Conductor ring

150: Impedance adjustment component

151: Capacitor

152: Relay

153: Inductance

154: Gas Spray Frame

155: Gas Mouth

156: gas volume area

157: ceramic plate

158: fixed frame

M: Gas device

w: substrate

C11, C12, C21, C22, C23, C24, C25: equivalent capacitance

L: Resistance

P0, P1’, P2’: Power

In order to explain the technical solution of the creative embodiment more clearly, the following will briefly introduce the drawings that need to be used in the description of the embodiment. It is obvious that the drawings in the following description are only some embodiments of the creation. For those with ordinary knowledge in the field, other drawings can be obtained based on these drawings without creative work.

Fig. 1 is a schematic diagram of a plasma processing device of the prior art; Fig. 2 is a schematic diagram of the low-frequency radio frequency power distribution in a plasma processing device of the prior art; Fig. 3 is a schematic diagram of the plasma processing device of the present invention; A schematic diagram of the power distribution; and Figure 5 is a schematic diagram of the impedance adjustment component of this creation.

In order to make the purpose, technical solutions, and advantages of the creative embodiment clearer, the technical solutions in the creative embodiment will be clearly and completely described below in conjunction with the drawings in the creative embodiment. It is obvious that the illustrated embodiments are part of the embodiments of this creation, but not all of the embodiments. Based on the embodiments in this creation, all other embodiments obtained by those with ordinary knowledge in the field without creative work are within the scope of protection of this creation.

Figure 1 is a conventional capacitive coupling type plasma processing device. The plasma processing device includes a reaction chamber 10 surrounded by a plurality of walls. A gas shower head 20 is provided above the reaction chamber 10 to supply the gas to the device. The reaction gas inside is introduced into the reaction chamber 10 to form plasma to etch the substrate w. The gas shower head 20 can be used as the upper electrode. The outer peripheral ring of the gas shower head 20 is provided with an isolation ring 30 to confine the plasma within the corresponding wall of the isolation ring 30. A susceptor 40 for supporting the substrate w is provided under the reaction chamber 10, and the susceptor 40 can be used as a lower electrode. A source radio frequency power supply is connected to the lower electrode through a high frequency radio frequency power matcher, and a bias radio frequency power supply is connected to the lower electrode through a bias radio frequency power matcher. The source radio frequency power supply outputs high frequency radio frequency power to the reaction chamber 10, so that the reaction gas sprayed into the reaction chamber 10 through the gas shower head 20 generates plasma, and the frequency of the high frequency radio frequency signal output by the source radio frequency power supply is greater than 13 MHz. The frequency of the low-frequency RF signal output by the bias RF power supply is less than 13MHz. Between the gas shower head 20 and the base 40 is a plasma treatment area. The base 40 is usually made of aluminum alloy by surface anodic oxidation, or is coated with an insulating corrosion-resistant material layer on the surface of the aluminum alloy to avoid a series of problems such as corrosion by the etching gas in the reaction chamber 10 and particle contamination. An electrostatic chuck 41 is provided on the upper surface of the base 40 for fixing the substrate w to be processed to the upper surface of the electrostatic chuck 41. The outer periphery of the lower part of the base 40 further includes a protruding stepped portion. A coupling ring 42 is provided on the stepped portion. The coupling ring 42 surrounds the outer periphery of the base 40. The material and shape and size of the coupling ring 42 can be selected to change the substrate. w The distribution of RF energy coupled to the edge region. Coupling loop A focus ring 43 is arranged above 42, wherein the focus ring 43 surrounds the electrostatic chuck 41 and its inner wall surrounds and closely adheres to the substrate w, and the upper surface of the focus ring 43 is exposed to plasma during the plasma treatment. The bottom of the reaction chamber 10 further includes an exhaust device to exhaust gas, thereby maintaining the low pressure in the reaction chamber 10. In the plasma processing process, the high frequency radio frequency power output by the source radio frequency power supply is used to ignite and maintain the plasma in the reaction chamber 10, and the low frequency radio frequency power output by the bias radio frequency power supply is used to control the sum formed on the upper surface of the substrate w The thickness of the sheath layer on the upper surface of the focusing ring 43, and the thickness of the sheath layer determines the energy and direction of the ions in the plasma incident on the substrate w. If the edge area of the substrate w and the sheath of the focus ring 43 are discontinuously distributed, it will cause the edge tilting of the etching rate and direction of the edge area of the substrate w and the center area of the substrate w (edge tilting), thereby reducing the processing of the substrate w Uniformity affects the yield of the final wafer.

Since the focus ring 43 is in the plasma filled with etching gas for a long time, after a certain period of plasma treatment, the surface material of the focus ring 43 will inevitably be corroded, so the height of the upper surface of the focus ring 43 will decrease accordingly. The lowered height will seriously affect the distribution and morphology of the sheath in the edge region of the substrate w. In order to offset the uneven plasma treatment effect produced during the long-term work, it is necessary to design a corresponding compensation mechanism or method. In part of the prior art, a mechanical driving device is provided in the reaction chamber 10 to drive the coupling ring 42 or the focus ring 43 to move up and down slightly to change the electric field distribution in the edge area of the substrate w. However, the use of this method will cause particle contamination problems due to moving parts, and the precise positioning of the moving coupling ring 42 and the focus ring 43 is also a big problem. The position deviation below 1mm will cause the substrate w The uneven distribution of the treatment effect.

The above adjustment method not only has a problem, but also has one of the most serious defects. The above adjustment method has little effect on the low-frequency RF power coupled to the focus ring 43, that is, a large adjustment must be made to effectively improve the power distribution. As shown in Figure 2, the input low-frequency radio frequency power P0 couples power P1' to the substrate w through the equivalent capacitance C11 between the base 40 and the substrate w, and at the same time passes through the base 40 to the coupling ring 42 and the focus ring 43. The equivalent capacitance between C12 couples the power P2' to the focus ring 43. The value of the equivalent capacitor C12 is very small and difficult to adjust, so the power P2’ will be much smaller than the power P1’ and the power ratio is very adjustable. all. In order to increase the equivalent capacitance C12, high-conductivity materials such as aluminum and silicon carbide can be selected to make the coupling ring 42, but this method of compensating through the selected material can only compensate for a period of time, but cannot dynamically compensate due to the focus ring. 43 The treatment effect caused by loss is uneven.

The following will further illustrate the specific embodiments of this creation in conjunction with FIG. 3 and FIG. 5.

After the creator’s research, it was found that when high-frequency RF power is input to the base 140, the RF power can be easily coupled to the focus ring 143, because the surface of the base 140 is very thin (tens of micrometers) for high-frequency signals and is insulated The resistance of the corrosion-resistant layer and the coupling ring 142 is small. But for low-frequency RF signals, the lower frequency causes the same insulation and corrosion-resistant layer to form a large impedance with the coupling ring 142. This impedance results in very little low-frequency RF energy being coupled to the focusing ring 143, even if various types of RF energy are used. The dielectric constant and position of the coupling ring 142 and the focus ring 143 are adjusted by means, and the final adjustable range is still limited. Because the insulating and anticorrosive layer on the side wall of the base 140 is indispensable, and the coupling ring 142 is usually made of insulating material, such as aluminum oxide or silicon oxide, it is impossible to adjust the low-frequency RF power to be distributed under the existing hardware structure. On the focus ring 143 at the edge of the substrate w. The coupling ring 142 can also be made of a highly conductive material, but this coupling ring 142 can only achieve a good etching effect in a short time, and the uneven processing effect caused by the loss of the focus ring 143 cannot be compensated for a long time. Moreover, the high-conductivity coupling ring 142 not only affects the distribution of low-frequency radio frequency power, but also affects the distribution of high-frequency radio frequency power, which also affects the distribution of plasma concentration. Therefore, the adjustment of the thickness of the sheath above the focus ring 143 causes electrical The plasma concentration distribution is not uniform, and the overall plasma treatment effect cannot be improved. The focus ring 143 is usually made of insulating materials such as quartz, alumina, or semiconductor materials such as silicon carbide, silicon, etc., so as to prevent particles generated during plasma processing from polluting the substrate w, and at the same time provide sufficient conductivity.

Based on this discovery, this author proposes a new plasma processing device as shown in Figure 3, the basic structure of which is the same as the technology shown in Figure 1. FIG. 3 shows that a conductor ring 144 is provided under the base 140. The conductor ring 144 is electrically connected to a coupling ring 142 made of high-conductivity materials such as aluminum and silicon carbide through a conductive connection portion. The conductor ring 144 Can be made of conductive materials such as copper; impedance adjustment component 150 is set It is under the base 140 and is electrically connected to the base 140; the conductive connection part is electrically connected to the impedance adjusting component 150 and the conductor ring 144. The low frequency radio frequency power delivered to the focus ring 143 is adjusted by adjusting the impedance adjusting component 150. In this creation, the coupling ring 142 made of high-conductivity materials such as aluminum and silicon carbide is used as the ring electrode, and the conductive connection part connects the conductor ring 144 and the coupling ring 142 to be electrically connected. Of course, in other embodiments Alternatively, a coupling ring 142 made of an insulating material can be provided, and then a ring electrode can be separately provided. The portion connects the conductor ring 144 and the ring electrode to achieve electrical conduction between the conductor ring 144 and the ring electrode. Preferably, the conductive connection part is a wire.

As shown in FIG. 5, the impedance adjusting component 150 includes a plurality of capacitors 151 and a plurality of relays 152, and each relay 152 is electrically connected to a single capacitor 151 to control the conduction state of the single capacitor 151. In this creation, the numbers of capacitors 151 and relays 152 are equal, and both are at least two. Preferably, three capacitors 151 and three relays 152 are provided. The single relay 152 is electrically connected to the single capacitor 151 to individually control the circuit conduction of each capacitor 151. The capacitance value of each capacitor 151 may be the same or different. The impedance adjustment component 150 further includes an inductor 153, which is electrically connected to the base 140. The inductor 153 is a low-pass filter, which prevents the high-frequency RF power output by the source RF power source from coupling to the focus ring 143 and biases the RF power source. The output low frequency radio frequency power can still be coupled to the focus ring 143. The gas spray frame 154 is arranged on the peripheral side of the plurality of capacitors 151. The gas spray frame 154 is provided with a plurality of gas nozzles 155 facing the wall surface of the capacitor 151. The gas spray frame 154 is dug with a gas volume area 156, the gas nozzle 155 and the gas The volume area 156 is connected, and the air nozzle 155 is used to spray air into the space where the capacitor 151 is located, so as to reduce the temperature of the capacitor 151 and its surrounding environment. The ceramic plate 157 is used to fix the capacitor 151 and the gas spray frame 154 on it, and has good high temperature resistance. One end of the fixing frame 158 is connected to the ceramic plate 157 and the other end is connected to the base 140 to fix the impedance adjusting component 150 to the base 140 as a whole.

The plurality of relays 152 of the impedance adjusting component 150 are connected to the controller through a control line. The controller can individually control the switch of each relay 152 to turn on or turn off some of the capacitors 151 in the plurality of capacitors 151 to adjust the transmission to The low frequency radio frequency power of the focus ring 143.

The gas spray frame 154 of the impedance adjusting component 150 communicates with the gas device M through a gas pipe, and a valve is arranged on the gas pipe to control the cooling gas to be passed into the gas volume area 156. The gas is dry compressed gas, which can be delivered to the surrounding environment area of the capacitor 151 to reduce the temperature of the capacitor 151 and its surrounding environment.

Figure 4 shows the equivalent circuit diagram and radio frequency power distribution diagram of this creation. The equivalent capacitance C21 coupled to the substrate w in this creation is still very large, so the main power can be coupled to the substrate w, and the base 140 passes through the sidewalls. The corrosion-resistant insulating layer and the equivalent capacitance C22 from the coupling ring 142 to the focusing ring 143 are still very small and cannot transmit high-power radio frequency power. The impedance adjustment component 150 does not transmit radio frequency power through a traditional coupling method, but directs the radio frequency power in the base 140 to the focusing ring 143 through a direct electrical connection, so it bypasses the impedance that seriously affects the coupling of low frequency radio frequency power. . Among them, the impedance adjusting component 150 can select capacitors 151 with different capacitance values for combination according to the needs, and the capacitor 151 with the required capacitance value can be selectively electrically conducted on the circuit through the relay 152, so this The created impedance adjustment component 150 can effectively adjust the low-frequency radio frequency power delivered to the focus ring 143 by simply turning on the capacitor 151 circuit with the required capacitance value. When the reaction chamber is in the initial state, the plurality of capacitors 151 are not electrically conductive. During the plasma processing, the etching effect of the substrate w can be monitored, and the etching effect of the edge area of the substrate w can be monitored. The etching effect of the area is different. If the inclination angle of the etching hole at the edge of the substrate w is within the preset angle range, continue to perform the step of monitoring the etching effect of the substrate w. If the etching hole at the edge of the substrate w inclines more than the preset angle, then The impedance adjustment component 150 performs adjustment. According to the degree of inclination of the etching hole on the edge of the substrate w monitored in the monitoring of the etching effect of the substrate w, at least one of the plurality of relays 152 is turned on through the controller, so that one or a certain one is electrically connected to the activated relay 152 Some capacitors 151 with the required capacitance value are electrically conductive, Immediately more low-frequency RF power is delivered to the focus ring 143 at the edge of the substrate w, and the low-frequency RF power of the focus ring 143 at the edge of the substrate w changes, thereby raising the sheath at the focusing ring 143, making the edge of the substrate w to focus There is a sheath of the same height above the ring 143 to improve etching uniformity. Continue to monitor the processing effect of the substrate w until the uniformity of the processing effect deviates again beyond the preset threshold, and adjust the value of the electrically conductive capacitor 151 again according to the monitored value to electrically conduct the corresponding capacitor 151 To compensate for the loss of the focus ring 143. In this way, the present invention can keep the plasma etching effect stable for a long time by changing the value of the electrically conductive capacitor 151 without replacing the focus ring 143 for a long time.

Although the content of this creation has been introduced in detail through the above preferred embodiments, it should be understood that the above description should not be considered as a limitation to this creation. After reading the above content, those with ordinary knowledge in the field will be able to make various modifications and substitutions for this creation will be obvious. Therefore, the scope of protection of this creation should be limited by the scope of the attached patent application.

110: reaction chamber

120: Gas sprinkler

130: isolation ring

140: Pedestal

141: Electrostatic chuck

142: Coupling Ring

143: Focus Ring

144: Conductor ring

150: Impedance adjustment component

M: Gas device

w: substrate

Claims (17)

A plasma processing device includes: a reaction chamber surrounded by a plurality of walls; a base arranged below the reaction chamber, and an electrostatic chuck is arranged on the base, and the electrostatic chuck is used to fix the substrate to be processed Chip, a source radio frequency power supply is connected to the base or a gas shower head and a bias radio frequency power supply is connected to the base; the gas shower head arranged above the reaction chamber is used to introduce gas into the reaction chamber Inside, between the gas shower head and the base is the plasma processing area; a focusing ring surrounding the electrostatic chuck and exposed to the plasma during the plasma processing; a ring electrode arranged under the focusing ring A conductor ring is arranged below the base, and the conductor ring is electrically connected to the ring electrode through a conductor connection portion; and an impedance adjustment component is disposed below the base; wherein the impedance adjustment component includes A plurality of capacitors and a plurality of relays, each of the relays is electrically connected to a single capacitor to control the conduction state of the single capacitor, the impedance adjusting component is electrically connected to the base, and the conductor connecting part is electrically connected to the impedance adjusting Components and the conductor ring. The plasma processing device according to claim 1, wherein the number of the capacitor is at least two, the number of the relay is also at least two and is equal to the number of the capacitor, and a single relay is equivalent to a single capacitor. Sexual connection. The plasma processing device according to claim 2, wherein the capacitance values of the capacitors are the same or different from each other. The plasma processing device according to claim 1, wherein the relay is connected to a controller through a control line, and the controller is used to control the switch of each of the relays. The plasma processing device according to claim 1, wherein the impedance adjusting component further includes an inductor, and the inductor is electrically connected to the base. The plasma processing device according to claim 5, wherein the inductor is a low-pass filter to prevent the high-frequency RF power output by the source RF power source from coupling to the focus ring, and the low-frequency RF power output by the bias RF power source Power is still coupled to the focus ring. The plasma processing device according to claim 1, wherein the ring electrode is a coupling ring, and the coupling ring is made of a highly conductive material including aluminum or silicon carbide. The plasma processing device according to claim 1, further comprising a coupling ring made of an insulating material, the coupling ring is arranged below the focusing ring, and the ring electrode is arranged in the coupling ring or in the coupling Between the ring and the focus ring. The plasma processing device according to claim 1, wherein the impedance adjusting component includes a gas spray frame, the gas spray frame is arranged on the peripheral side of the capacitor, and the wall surface of the gas spray frame facing the capacitor is provided with a plurality of gas nozzles , The plurality of air nozzles are used to blow air into the space where the capacitor is located, so as to reduce the temperature of the capacitor and its surrounding environment. The plasma processing device according to claim 9, wherein a gas volume area is excavated in the gas spray frame, and the gas nozzle is connected to the gas volume area. The plasma processing device according to claim 10, wherein the impedance adjusting component communicates with a gas device through a gas pipe, and a valve is arranged on the gas pipe to control the passage of a gas into the gas volume area. The plasma processing device according to claim 11, wherein the gas is dry compressed gas. The plasma processing device according to claim 9, wherein the impedance adjusting component includes a ceramic plate, and the capacitor and the gas spray frame are fixed to the ceramic plate. The plasma processing device according to claim 13, wherein the impedance adjustment component includes a fixing frame, one end of the fixing frame is connected to the ceramic plate, and the other end is connected to the base, so that the impedance adjustment component is integrally fixed to The pedestal. The plasma processing device according to claim 1, wherein the conductor ring is made of copper. The plasma processing device according to claim 1, wherein the frequency of the radio frequency signal output by the bias radio frequency power supply is less than 13 MHz. The plasma processing device according to claim 1, wherein the source radio frequency power supply outputs high frequency radio frequency power to the reaction chamber, so that the reaction gas sprayed into the reaction chamber through the gas shower head generates plasma, and the source radio frequency power supply The frequency of the output RF signal is greater than 13MHz.

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