TWM611951U - Durable memory storage device - Google Patents

Abstract

A durable memory storage device, comprising: a multilayer printed circuit board with a plurality of circuit layers and a plurality of insulating layers arranged alternately, the circuit layers are electrically connected through vias, and the circuit layer has at least one ground layer; A memory unit; a connection interface for connecting to a corresponding connection part of a computing device; and an anti-sulfur and high-voltage passive component, which is arranged on the multilayer printed circuit board and is electrically connected to the connection interface and the memory unit. By combining anti-vulcanization and high-voltage passive components and multilayer printed circuit boards, the durable memory storage device created by this invention can be used in outdoor environments.

Description

Durable memory storage device

This creation is related to a memory storage device, especially a durable memory storage device.

The memory storage device is an important component on the computing device, which can store or temporarily store the digital data on the computing device for quick access. Memory storage devices include DRAM modules such as UDIMM, RDIMM, and SODIMM, and flash modules such as solid state drives. Due to the miniaturization of the computing device, its use environment may be located in an outdoor location, which greatly increases the probability that compounds and water molecules in the air contact the memory storage device, which shortens the life of the memory storage device. Moreover, in outdoor places, in addition to the risk of vulcanization, the components of the memory storage device may also be damaged by lightning strikes from the sky and high-voltage surges generated by static electricity, causing component failure.

In response to this, some solid-state hard disks use anti-sulfurization resistors to change the material of the electrode layer to avoid sulfurization. And change the structure of the resistance to change the conductive path between the electrodes from a straight line to a zigzag, which can resist high-voltage surges. However, the only passive components of solid-state hard drives that resist vulcanization and high-voltage surges are still not enough to cope with the outdoor environment.

Therefore, the purpose of this creation is to provide a durable memory storage device that has the effect of protecting against high-voltage surges.

The technical means used in this creation to solve the problems of the conventional technology is to provide a durable memory storage device, which is a memory or a solid state drive. The durable memory storage device includes: a multilayer printed circuit board with plural A circuit layer and a plurality of insulation layers, the plurality of the circuit layers and the plurality of the insulation layers are arranged alternately, the plurality of the circuit layers are electrically connected through the via holes, and at least one of the plurality of the circuit layers is a ground layer; A memory unit disposed on the multilayer printed circuit board; a connection interface disposed on the multilayer printed circuit board and electrically connected to the memory unit, the connection interface for connecting to a corresponding connection portion of a computing device; and An anti-sulfurization and high-voltage passive component is arranged on the multilayer printed circuit board and electrically connected to the connection interface and the memory unit. The electrodes of the anti-sulfurization and high-voltage passive component have tortuous conductive paths between the electrodes.

In an embodiment of the present invention, a durable memory storage device is provided, and the anti-sulfurization and high-voltage passive component is an anti-sulfurization and high-voltage resistance.

In an embodiment of the present invention, a durable memory storage device is provided, and the multilayer printed circuit board is an eight-layer multilayer printed circuit board or a ten-layer multilayer printed circuit board.

In an embodiment of the present invention, a durable memory storage device is provided. The ground layer of the multilayer printed circuit board includes a power ground, and the anti-sulfur and high-voltage passive component is connected to the power ground.

In one embodiment of the present invention, a durable memory storage device is provided. The ground layer of the multilayer printed circuit board includes an analog signal ground and a common ground. The power ground is connected to the common ground through a via hole. , The analog signal ground is connected to the common ground through another via.

In an embodiment of the present invention, a durable memory storage device is provided, which further includes an anti-high voltage capacitor, which is disposed on the multilayer printed circuit board and electrically connected to the connection interface and the memory unit.

In an embodiment of the present invention, a durable memory storage device is provided, and there are a plurality of anti-vulcanization and high-pressure passive components.

In an embodiment of the present invention, a durable memory storage device is provided, and the durable memory storage device is a memory.

In an embodiment of the present invention, a durable memory storage device is provided, and the durable memory storage device is a solid state drive.

The technical method adopted by the durable memory storage device created by this invention is to install the anti-sulfur and high-voltage passive components on the multilayer printed circuit board. Among them, the anti-sulfurization and high-voltage passive components are based on the anti-sulfurization passive components. The conductive path between the electrodes is changed from a straight line to a tortuous, so as to extend the distance between the electrodes and slowly tilt the potential inclination to avoid high-voltage surges against vulcanization. Resistant to high-voltage passive components causing damage. In addition to the ability to resist high-voltage surges through the anti-vulcanization and high-voltage passive components, the multilayer printed circuit board can make the wiring multi-layer dispersed, so that there is a certain distance between the lines, reducing the chance of mutual interference and conduction. It also has a grounding layer with good conductivity and shielding, which can also absorb and shield excessive high-voltage surges. Therefore, anti-vulcanization and high-voltage passive components plus multi-layer printed circuit board multi-layer circuit design can simultaneously resist high-voltage surges. In this way, the durable memory storage device created by this invention can be used in outdoor environments.

The following describes the implementation of this creation based on Figures 1 to 4. This description is not intended to limit the implementation of this creation, but is a kind of embodiment of this creation.

As shown in FIG. 1, a durable memory storage device 100 according to an embodiment of the present invention includes: a multilayer printed circuit board (multilayer PCB) 1, a memory unit 2, a connection interface 3, and a Anti-vulcanization and high-pressure passive components 4.

The durable memory storage device 100 may be, for example, UDIMM (unbuffered dual in-line memory module), RDIMM (registered dual in-line memory module), SODIMM (small outline dual in-line memory module) memory, or solid state hard drives. dish.

As shown in FIG. 2, according to the durable memory storage device 100 of this embodiment of the invention, the multilayer printed circuit board 1 has a plurality of circuit layers 11 and a plurality of insulating layers 12. The plurality of circuit layers 11 and the plurality of insulating layers 12 are arranged in a staggered manner. The thickness of each insulating layer 12 is greater than the thickness of the circuit layer 11. The plurality of circuit layers 11 are electrically connected through vias 13. At least one of the plurality of circuit layers 11 is a ground layer.

As shown in FIG. 2, in this embodiment, the multilayer printed circuit board 1 is a ten-layer multilayer printed circuit board, and there are ten circuit layers 11 and nine insulating layers 12 in total. Of course, the number of layers of the multilayer printed circuit board 1 is not limited to this. In other embodiments, the multilayer printed circuit board 1 may also be an eight-layer multilayer printed circuit board or other even-numbered multilayer printed circuit boards. In this way, the multilayer printed circuit board 1 can disperse the wiring in multiple layers, so that there is a certain distance between the circuits, and the chance of mutual interference and conduction is reduced.

As shown in FIG. 3, according to the durable memory storage device 100 of this embodiment of the present invention, the ground layer of the multilayer printed circuit board 1 includes a power ground (PGND) 111 and an analog ground (analog ground). , AGND) 112 and a common ground 113. The anti-sulfuration and high-voltage passive component 4 is connected to the power ground 111. Among them, the power ground 111 is copper foil. Compared with copper wires, the power ground 111 has a larger ground area, and has the effect of effectively absorbing and shielding high voltages and surges. The analog signal ground 112 and a common ground 113 are the same.

As shown in FIG. 3, according to the durable memory storage device 100 of this embodiment of the present invention, the power ground 111 of the multilayer printed circuit board is a plurality of layers, which are connected to each other through the via 13. With the multi-layer arrangement, the ground area of the power ground 111 is further increased.

As shown in FIG. 3, according to the durable memory storage device 100 of this embodiment of the present invention, the power ground 111 is the ground for digital signals, and the analog signal ground 112 is the ground for analog signals. In order to avoid mutual interference between the digital signal and the analog signal, the power ground 111 and the analog signal ground 112 are not directly connected, but are connected through a common ground 113. In detail, the power ground 111 is connected to the common ground 113 through the via 13, and the analog signal ground is connected to the common ground 113 through the other via 13.

As shown in FIG. 3, according to the durable memory storage device 100 of the embodiment of the present invention, the insulating layer 12 includes a prepreg 121 and a core 122, and the prepreg 121 is used to connect the circuit The layer 11 and the core board 122 are bonded together.

As shown in FIG. 1, the memory unit 2, the connection interface 3 and the anti-sulfuration and high-voltage passive component 4 are all arranged on the multilayer printed circuit board 1. Among them, the memory unit 2 is a dynamic random access memory chip or a flash memory chip.

As shown in Figure 1, the connection interface 3 is a golden finger, which is connected to the computing device when the durable memory storage device 100 of the present invention is inserted into the corresponding connection part of the computing device. The connection interface 3 is electrically connected to the memory unit 2 to transmit signals between the computing device and the memory unit 2. In this embodiment, the durable memory storage device 100 is an M.2 solid state drive, and the corresponding connection part of the computing device is an M.2 slot.

The anti-sulfuration and high-voltage passive component 4 is electrically connected to the connection interface 3 and the memory unit 2. As shown in Figure 4, the anti-sulfurization and high-voltage passive component 4 is based on the anti-sulfurization passive component. The conductive path 42 between the electrodes 41 is set in a tortuous path, and the high potential of the high-voltage surge can be dispersed to a larger range. , Slowly tilt the potential inclination to resist the surge to avoid component failure. In this way, the durable memory storage device 100 of the present invention can be applied to an outdoor environment. Specifically, the anti-sulfurization and high-voltage passive component 4 is an anti-sulfurization and high-voltage resistance.

Furthermore, as shown in FIG. 1, according to the durable memory storage device 100 of this embodiment of the present invention, there are a plurality of anti-vulcanization and high-pressure passive components 4. In detail, all the resistors of the durable memory storage device 100 of the embodiment of the present invention are anti-sulfurization and high-voltage passive components 4. In other embodiments, all the resistors in the durable memory storage device may be anti-vulcanization and high-pressure passive components.

In addition, as shown in FIG. 1, according to the durable memory storage device 100 of the embodiment of the present invention, the multilayer printed circuit board 1 is further provided with an anti-high voltage capacitor 5. The anti-high voltage capacitor 5 is electrically connected to the memory unit 2 and the connection interface 3. In detail, all the capacitors of the durable memory storage device 100 in the embodiment of the present invention are anti-high voltage capacitors 5.

With the above structure, the multilayer printed circuit board 1, the anti-sulfurization and anti-high-voltage passive components 4 and the anti-high-voltage capacitor 5 have protective effects against high-voltage surges and signal interference, reducing the chance of mutual interference and conduction, making the durable memory storage of this creation The device can be used in outdoor environments.

The above descriptions and descriptions are only descriptions of the preferred embodiments of this creation. Those with ordinary knowledge of this technology should make other modifications based on the scope of patent application defined below and the above descriptions, but these modifications should still be made. It is the creative spirit of this creation and within the scope of the rights of this creation.

100: Durable memory storage device 1: Multilayer printed circuit board 11: circuit layer 111: Power ground 112: Digital signal ground 113: Common ground 12: Insulation layer 121: Prepreg 122: core board 13: pilot hole 2: Memory unit 3: Connection interface 4: Anti-vulcanization and high-pressure passive components 41: Electrode 42: Conductive path 5: Anti-high voltage capacitor

[Figure 1] is a schematic top view showing a durable memory storage device according to an embodiment of the present invention; [Figure 2] is a schematic side view showing the durable memory storage device according to this embodiment of the invention; [Figure 3] is a schematic side view showing the multilayer printed circuit board of the durable memory storage device according to the embodiment of the invention; [Fig. 4] is a schematic cross-sectional view showing the anti-vulcanization and high-pressure passive components of the durable memory storage device according to this embodiment of the invention.

100: Durable memory storage device

1: Multilayer printed circuit board

2: Memory unit

3: Connection interface

4: Anti-vulcanization and high-pressure passive components

5: Anti-high voltage capacitor

Claims (9)

A durable memory storage device, which is a memory or a solid-state hard disk. The durable memory storage device includes: A multilayer printed circuit board has a plurality of circuit layers and a plurality of insulating layers. The circuit layers and the insulating layers are arranged alternately, and the circuit layers are electrically connected through via holes, and the circuits are electrically connected. At least one of the layers is a ground layer; A memory unit arranged on the multilayer printed circuit board; A connection interface disposed on the multilayer printed circuit board and electrically connected to the memory unit, the connection interface being used to connect to a corresponding connection portion of a computing device; and An anti-sulfurization and high-voltage passive component is arranged on the multilayer printed circuit board and electrically connected to the connection interface and the memory unit. The electrodes of the anti-sulfurization and high-voltage passive component have tortuous conductive paths between the electrodes. Such as the durable memory storage device of claim 1, wherein the anti-sulfurization and high-voltage passive component is an anti-sulfurization and high-voltage resistance. Such as the durable memory storage device of claim 1, wherein the multilayer printed circuit board is an eight-layer multilayer printed circuit board or a ten-layer multilayer printed circuit board. For example, the durable memory storage device of claim 1, wherein the ground layer of the multilayer printed circuit board includes a power ground, and the anti-sulfur and high-voltage passive component is connected to the power ground. For example, the durable memory storage device of claim 4, wherein the ground layer of the multilayer printed circuit board includes an analog signal ground and a common ground, the power ground is connected to the common ground through a via hole, and the analog signal ground Connect to the common ground through another via hole. For example, the durable memory storage device of claim 1, further comprising an anti-high voltage capacitor, which is disposed on the multilayer printed circuit board and electrically connected to the connection interface and the memory unit. Such as the durable memory storage device of claim 1, wherein the anti-vulcanization and high-pressure passive components are plural. For example, the durable memory storage device of claim 1, wherein the durable memory storage device is a memory. For example, the durable memory storage device of claim 1, wherein the durable memory storage device is a solid state drive.

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