TWM610353U - Vertical furnace and vertical boat used therefor - Google Patents
Vertical furnace and vertical boat used therefor Download PDFInfo
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- TWM610353U TWM610353U TW109215537U TW109215537U TWM610353U TW M610353 U TWM610353 U TW M610353U TW 109215537 U TW109215537 U TW 109215537U TW 109215537 U TW109215537 U TW 109215537U TW M610353 U TWM610353 U TW M610353U
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Description
本創作是關於在立式爐管中承載晶圓之立式晶舟,具體而言,是應用於熱處理、氧化、擴散、CVD(化學氣相沉積)等製程之立式晶舟。 This creation is about a vertical wafer boat that carries wafers in a vertical furnace tube. Specifically, it is a vertical wafer boat used in processes such as heat treatment, oxidation, diffusion, and CVD (Chemical Vapor Deposition).
爐管設備在半導體製程中廣泛地應用於許多處理,例如擴散沉積、氧化、退火等。其中,擴散沉積處理主要用以在基板(例如半導體晶圓)上產生薄膜。當透過立式爐管進行製程時,通常期望使基板上之薄膜具有較佳的均勻性與較少的表面缺陷。 Furnace tube equipment is widely used in many processes in the semiconductor manufacturing process, such as diffusion deposition, oxidation, annealing, and so on. Among them, the diffusion deposition process is mainly used to produce a thin film on a substrate (such as a semiconductor wafer). When the process is performed through a vertical furnace tube, it is generally desirable to make the film on the substrate have better uniformity and fewer surface defects.
在晶圓處理過程中,通常需要將反應氣體導入爐管中,並使反應氣體在爐管中擴散至基板表面上以產生所需之薄膜。因此,爐管中之反應氣體均勻分佈於基板係至關重要的。一般而言,爐管設備可分為水平式爐管及立式爐管。其中立式爐管的反應器係以直立的方式配置,且因其整體的佔地面積較小而被大量地應用。在習知的立式爐管中,晶舟承載晶圓之方式為使晶圓表面支撐於晶舟之水平面溝槽上,而反應氣體則透過氣體注射器導入至爐管腔體內,並擴散至承載在晶舟上的晶圓,以達到薄膜形成之目的。然而,當晶圓被承載在此習知設計之晶舟時,因晶圓與晶舟之承載面(例如,槽面(slot))的接觸 面積較大且完整貼覆,並無法使反應氣體均勻地在晶圓表面上進行反應,並且在晶圓與承載面接觸之處容易產生缺陷,從而導致所獲得之晶圓表面與表面上的薄膜可能係非理想的。 In the process of wafer processing, it is usually necessary to introduce the reaction gas into the furnace tube and diffuse the reaction gas on the surface of the substrate in the furnace tube to produce the required thin film. Therefore, it is very important that the reaction gas in the furnace tube is uniformly distributed on the substrate. Generally speaking, furnace tube equipment can be divided into horizontal furnace tubes and vertical furnace tubes. Among them, the reactor of the vertical furnace tube is arranged in a vertical manner, and is widely used because of its small overall footprint. In the conventional vertical furnace tube, the wafer boat carries the wafer by supporting the surface of the wafer on the horizontal groove of the wafer boat, and the reaction gas is introduced into the furnace tube cavity through a gas injector and diffused to the carrier. Wafers on the wafer boat to achieve the purpose of film formation. However, when the wafer is carried on the wafer boat of this conventional design, the contact between the wafer and the carrying surface (for example, slot) of the wafer boat Large area and complete attachment, and it is impossible for the reactive gas to react uniformly on the surface of the wafer, and defects are prone to occur at the contact between the wafer and the carrying surface, resulting in the obtained wafer surface and the thin film on the surface It may be non-ideal.
在此背景下產生本創作。 This creation was produced in this context.
有鑒於此,依據本創作之實施例而提供一種用於立式爐管之新型晶舟,其包含:上板體、下板體、承載棒體、支撐棒體。該上板體為立式晶舟頂部之固定板;下板體為立式晶舟底部之定位板;支撐棒體為強化晶舟結構之支撐柱;承載棒體上具有複數個溝槽,溝槽間之承載面(亦可稱為「溝齒」、「溝面」、或「槽面(slot)」)則為承載晶圓之主要結構。該晶舟之支撐棒體與三根承載棒體係連接於上板體部分與下板體部分之間。晶舟整體設置於立式爐管的內管之內,並沿著該立式爐管之延伸方向延伸。此外,當將晶圓置放於晶舟中時,晶圓係水平地支撐於晶舟之各承載面上。 In view of this, a new type of wafer boat for vertical furnace tubes is provided according to the embodiment of the invention, which includes: an upper plate body, a lower plate body, a supporting rod body, and a supporting rod body. The upper plate body is the fixed plate at the top of the vertical wafer boat; the lower plate body is the positioning plate at the bottom of the vertical wafer boat; the supporting rod body is a supporting column for strengthening the wafer boat structure; the supporting rod body has a plurality of grooves and grooves. The loading surface between the slots (also called "groove", "groove surface", or "slot") is the main structure for supporting wafers. The supporting rod body of the wafer boat and the system of three supporting rods are connected between the upper plate body part and the lower plate body part. The wafer boat is integrally arranged in the inner tube of the vertical furnace tube and extends along the extension direction of the vertical furnace tube. In addition, when the wafer is placed in the wafer boat, the wafer is horizontally supported on each carrying surface of the wafer boat.
在一實施例中,晶舟之各部分均由石英所製成。在一實施例中,支撐棒體及承載棒體之長度方向互相平行,且各棒體的兩端各自與上板體、下板體之平面連接。在一實施例中,該晶舟的承載棒體上之溝面為一斜面,其與水平面之間的角度係介於8°~10°之間。 In one embodiment, all parts of the wafer boat are made of quartz. In one embodiment, the length directions of the supporting rod body and the supporting rod body are parallel to each other, and the two ends of each rod body are connected to the plane of the upper plate body and the lower plate body respectively. In one embodiment, the groove surface on the supporting rod body of the wafer boat is an inclined surface, and the angle between the groove surface and the horizontal surface is between 8° and 10°.
依據本創作之實施例而提供一種直立式爐管,其包含一外管、一內管、一晶舟、以及複數氣體注入器。該內管係設置於該外管之內部。該晶舟係設置於該內管之內部且用以承載晶圓。在一實施例中,該晶舟共有三根承載棒體與一根支撐棒體,其中第一承載棒體、第二承載棒體、第三承載棒體、 及支撐棒體之間彼此相隔一預定距離而排列。在一實施例中,上述之三根承載棒體的溝面係以本創作之特殊技術(例如,可包含切溝成型、粗糙化、蝕刻、清洗等步驟)使其粗糙化,且粗糙化程度達到Ra>10um之表面粗糙度。 According to the embodiment of the present invention, a vertical furnace tube is provided, which includes an outer tube, an inner tube, a wafer boat, and a plurality of gas injectors. The inner tube is arranged inside the outer tube. The wafer boat is arranged inside the inner tube and used to carry wafers. In one embodiment, the wafer boat has three supporting rods and one supporting rod, wherein the first supporting rod, the second supporting rod, the third supporting rod, And the supporting rods are arranged at a predetermined distance from each other. In one embodiment, the groove surfaces of the above three bearing rods are roughened by the special technique of this creation (for example, it may include the steps of groove forming, roughening, etching, cleaning, etc.), and the degree of roughening reaches Ra>10um surface roughness.
藉由以下配合隨附圖式所述之詳細說明,將更清楚本創作的其他態樣。 Through the following detailed description with accompanying drawings, other aspects of this creation will be clearer.
100:立式爐管 100: Vertical furnace tube
102:外管 102: Outer tube
104:內管 104: inner tube
106:立式晶舟 106: vertical crystal boat
108:氣體注射器 108: Gas Syringe
110:氣體供應部 110: Gas Supply Department
112:第一承載棒體 112: The first bearing rod
114:第二承載棒體 114: second bearing rod
116:第三承載棒體 116: The third bearing rod
118:支撐棒體 118: Support rod
120:基座 120: Pedestal
122:第一板體 122: first board body
132:第二板體 132: second board
136:開口側 136: open side
138:半圓弧側 138: Half arc side
140:承載面 140: bearing surface
142:水平面 142: horizontal plane
W:晶圓 W: Wafer
參考以下配合隨附圖式所做的詳細描述將可更透徹理解所描述之實施例及其優點。該等圖式並不限制熟悉本技藝者在不超出實施例之精神及範圍下對描述之實施例做出形式及細節上的改變。 With reference to the following detailed description with accompanying drawings, the described embodiments and their advantages can be more thoroughly understood. The drawings do not limit those skilled in the art to make changes in form and details of the described embodiments without departing from the spirit and scope of the embodiments.
圖1為依據本創作之一實施例之立式爐管之剖面示意圖。 Figure 1 is a schematic cross-sectional view of a vertical furnace tube according to an embodiment of the invention.
圖2顯示依據本創作之一實施例之立式晶舟之側視圖。 Figure 2 shows a side view of a vertical wafer boat according to an embodiment of the invention.
圖3顯示依據本創作之一實施例之立式晶舟之立體圖。 Figure 3 shows a three-dimensional view of a vertical wafer boat according to an embodiment of the invention.
圖4顯示依據本創作之一實施例之立式晶舟的溝槽上之粗糙面的示意圖。 FIG. 4 shows a schematic diagram of the rough surface on the trench of the vertical wafer boat according to an embodiment of the present invention.
圖5為依據本創作之一實施例之立式晶舟之仰視圖。 Fig. 5 is a bottom view of a vertical wafer boat according to an embodiment of the present creation.
圖6為依據本創作之一實施例之立式晶舟之俯視圖。 Fig. 6 is a top view of a vertical wafer boat according to an embodiment of the present creation.
在本創作之圖式中,元件符號可能重複使用,以標示類似及/或相同的元件。 In the drawings of this creation, component symbols may be used repeatedly to indicate similar and/or identical components.
本創作之目的、優點和特色由以下數個實施例之詳細說明及伴隨的圖式當可更加明白。 The purpose, advantages and features of this creation can be more clearly understood from the detailed description of the following several embodiments and accompanying drawings.
為了更清楚地了解本創作之實施方式,在以下的敘述中,將提出許多特定細節。然而,即使缺乏該等細節之一部分或全部,所揭示的實施例亦可實施。在某些情況下,則不詳細說明習知的結構及操作方式,以避免不必要地模糊了所揭示的實施例。雖然為了說明之目的而提出許多特定細節,但應當了解,其並非用來限制所揭示的實施例。當以相對性的術語(例如,「上」與「下」、「頂」與「底」、「內」與「外」等)來描述特定實施例時,這些術語僅僅是為了方便理解,其並非用來做為限制。此外,應當了解,圖中所示之各種實施例是示意性的,且不一定按照比例繪製。 In order to understand the implementation of this creation more clearly, in the following description, many specific details will be presented. However, even if part or all of these details are lacking, the disclosed embodiments can be implemented. In some cases, the conventional structure and operation method are not described in detail to avoid unnecessarily obscuring the disclosed embodiments. Although many specific details are presented for illustrative purposes, it should be understood that they are not used to limit the disclosed embodiments. When relative terms (for example, "upper" and "lower", "top" and "bottom", "inner" and "outer", etc.) are used to describe specific embodiments, these terms are only for ease of understanding. Not to be used as a restriction. In addition, it should be understood that the various embodiments shown in the figures are schematic and are not necessarily drawn to scale.
依據本創作之一實施例,圖1為立式爐管100之剖面示意圖。如圖1所示,立式爐管100包含外管102、內管104、立式晶舟106、氣體注射器108、氣體供應部110、以及基座120。其中,內管104係設置於外管102內,且外管102與內管104係以同心圓形式而加以配置,且外管102與內管104之間相隔一預定距離。在一些實施例中,外管102與內管104係由石英所製成。此外,立式晶舟106係設置於內管104之內、基座120之上,並且用以將待處理之晶圓W水平地承載於其上。在一些實施例中,立式晶舟106係由石英所製成。氣體注射器108係從外管102的外部延伸至內管104的內部,用以將一或更多反應氣體從氣體供應部110輸送至立式爐管100之內部。以下將藉由圖2及圖3來說明本創作之高良率的立式晶舟106之各種實施例。
According to an embodiment of the present invention, FIG. 1 is a schematic cross-sectional view of a
依據本創作之一實施例,圖2及圖3分別顯示立式晶舟106之側視圖及立體圖。立式晶舟106包含棒體部分與板體部分,其中,棒體部分包
含第一承載棒體112、第二承載棒體114、第三承載棒體116、及支撐棒體118,而板體部分包含第一板體122及第二板體132。在一實施例中,第一承載棒體112、第二承載棒體114、及第三承載棒體116之各者具有相同數量且等距排列之複數溝槽。此外,該等溝槽之各者具有用以支撐晶圓的承載面(亦即,與晶圓接觸之表面,且亦可稱為「溝齒」、「溝面」、或「槽面(slot)」)。在一實施例中,每個溝槽之承載面為傾斜的。例如,每個溝槽之承載面140與水平面142之間的角度θ係介於約8°~10°之間。此外,每個溝槽之承載面均可經由粗糙化處理而使得表面粗糙度(Ra)>10μm,如圖4之示意圖所示。在一實施例中,支撐棒體118為一實心之石英圓柱,用於為晶舟主體提供支撐性,以強化晶舟整體的結構強度。應注意,雖然圖2中為了簡潔而未將該等承載棒體上的所有溝槽繪示出,但應理解,該等承載棒體上的溝槽可根據需要而分布遍及其整個長度、或整個長度其中的一部分。
According to an embodiment of the present invention, FIGS. 2 and 3 show a side view and a three-dimensional view of the
如上所述,立式晶舟106亦包含第一板體122及第二板體132。圖5顯示立式晶舟106之仰視圖(亦即,第一板體122之底表面之視圖)。第一板體122位於立式晶舟106的底部,且為立式晶舟106之基座。第一板體122可使立式晶舟106整體穩定地直立設置於爐管(例如,立式爐管100)的基座(例如,基座120)上。圖6為立式晶舟106之俯視圖(亦即,第二板體132之頂表面之視圖)。第二板體132位於立式晶舟106的頂部,且主要用以穩固晶舟。
As mentioned above, the
在本創作之實施例中,棒體部分(亦即,第一承載棒體112、第二承載棒體114、第三承載棒體116、及支撐棒體118)係設置於第一板體122及第二板體132之間,並且各個棒體的下端與第一板體122連接,而各個棒體的上端與第二板體132連接。此外,各個棒體係彼此平行且彼此相間隔地沿圓弧
排列。更具體而言,立式晶舟106具有供晶圓進出的一開口側(如在圖6之俯視圖中的開口側136),並且三個承載棒體112、114、116及支撐棒體118在與該開口側相對的半圓弧側138上彼此相間隔地平行排列。此外,第一及第二承載棒體112、114係分別位在該半圓弧側的兩端附近,如圖6所示。在一實施例中,第二承載棒體114與第三承載棒體116相隔約45度;第一承載棒體112與支撐棒體118相隔約45度;且第三承載棒體116與支撐棒體118相隔約90度,如圖3及6所概略顯示。與具有較多根承載棒體的晶舟相比,依據本創作之立式晶舟藉由使用三根承載棒體及一根支撐棒體而可獲得以下有利功效:與晶圓的接觸面積較少;並且更有利於晶圓放置於晶舟上時的平衡支撐。
In the embodiment of the present invention, the rod part (ie, the first supporting
藉由使用根據本創作之具有傾斜且粗糙之承載面的立式晶舟106,可改善在晶圓表面反應生成之薄膜的均勻性,並可使不樂見的晶圓上之粒子(particle)減少。在一較佳實施例中,溝槽之傾斜承載面與水平面之間的角度係介於8°至10°之間。在另一較佳實施例中,溝槽之傾斜承載面與水平面之間的角度為約10°。此外,在一較佳實施例中,溝槽之傾斜承載面的表面粗糙度(Ra)大於10μm。
By using the
在一些實施例中,立式晶舟106可由石英(例如GE型號、HSQ型號之石英)所製成。然而,應理解,立式晶舟106可由任何的其他合適材料所製成。此外,在立式晶舟106中,除了第一承載棒體112、第二承載棒體114、第三承載棒體116之外,其它部分均可經加工以具有光滑表面,並且在尖銳及/或尖角處可經加工以使其圓滑。
In some embodiments, the
在一些實施例中,設置於第一承載棒體112、第二承載棒體114、第三承載棒體116之每一者上的溝槽數量可為數十個至上百個。在一較佳
實施例中,設置於第一承載棒體112、第二承載棒體114、第三承載棒體116之每一者上的溝槽數量為170個,並且每個溝槽之傾斜承載面係互相平行並相隔一預定距離(例如,在一實施例中相隔約5.2mm)。
In some embodiments, the number of grooves provided on each of the first supporting
相較於習知的立式爐管之晶舟(其溝槽之承載面為一水平面且表面光滑),本創作採用具有粗糙斜面之溝槽的立式晶舟,因此能獲得以下有利功效:當反應氣體輸送進入立式爐管100中進行擴散反應時,由於根據本創作之立式晶舟與所承載的晶圓之間有較小的接觸面積,故反應氣體可均勻且有效的在晶圓表面進行反應,從而改善所沉積之薄膜的厚度均勻性;並且亦可減少在製程過程中晶圓上之粒子的產生,進而使晶圓缺陷減少,良率獲得有效的提昇。
Compared with the conventional wafer boat of the vertical furnace tube (the bearing surface of the groove is a horizontal plane and the surface is smooth), this creation uses a vertical wafer boat with grooves with rough slopes, so the following beneficial effects can be obtained: When the reaction gas is transported into the
儘管上述實施例已為了清楚理解之目的而詳細地加以描述,但顯然地,在所附申請專利範圍之範疇中,可實行某些變更及修改。應當注意,有許多替代的方式來實施本案實施例之方法及設備。因此,本案實施例應被視為是用於說明的而不是限制性的,且本案實施例不應被限制於本文中所提出之特定細節。 Although the above embodiments have been described in detail for the purpose of clear understanding, it is obvious that certain changes and modifications can be implemented within the scope of the appended patent application. It should be noted that there are many alternative ways to implement the method and equipment of the embodiment of this case. Therefore, the embodiments of this case should be regarded as illustrative rather than restrictive, and the embodiments of this case should not be limited to the specific details set forth herein.
應當瞭解,本文中所述之結構及/或方法在本質上為示例性的,這些特定的實施例或範例不應被視為是限制性的,因為可能有各種變化。 It should be understood that the structures and/or methods described herein are exemplary in nature, and these specific embodiments or examples should not be regarded as restrictive, as there may be various changes.
本揭示內容之標的包括在本文中所揭示之各種處理及結構、以及其它特徵、功能、動作、及/或特性之所有新穎及非顯而易見的組合與次組合,以及其任何及所有的均等物。 The subject of this disclosure includes all novel and non-obvious combinations and sub-combinations of the various processes and structures disclosed herein, as well as other features, functions, actions, and/or characteristics, and any and all equivalents thereof.
106:立式晶舟 106: vertical crystal boat
112:第一承載棒體 112: The first bearing rod
114:第二承載棒體 114: second bearing rod
116:第三承載棒體 116: The third bearing rod
118:支撐棒體 118: Support rod
122:第一板體 122: first board body
132:第二板體 132: second board
Claims (7)
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TW109215537U TWM610353U (en) | 2020-11-25 | 2020-11-25 | Vertical furnace and vertical boat used therefor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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TW109215537U TWM610353U (en) | 2020-11-25 | 2020-11-25 | Vertical furnace and vertical boat used therefor |
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Publication Number | Publication Date |
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TWM610353U true TWM610353U (en) | 2021-04-11 |
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Family Applications (1)
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TW109215537U TWM610353U (en) | 2020-11-25 | 2020-11-25 | Vertical furnace and vertical boat used therefor |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI751806B (en) * | 2020-11-25 | 2022-01-01 | 松勁科技股份有限公司 | Vertical furnace and vertical boat used therefor |
CN117438351A (en) * | 2023-12-20 | 2024-01-23 | 无锡松煜科技有限公司 | Vertical crystal boat for heat treatment of semiconductor vertical furnace |
-
2020
- 2020-11-25 TW TW109215537U patent/TWM610353U/en unknown
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI751806B (en) * | 2020-11-25 | 2022-01-01 | 松勁科技股份有限公司 | Vertical furnace and vertical boat used therefor |
CN117438351A (en) * | 2023-12-20 | 2024-01-23 | 无锡松煜科技有限公司 | Vertical crystal boat for heat treatment of semiconductor vertical furnace |
CN117438351B (en) * | 2023-12-20 | 2024-03-19 | 无锡松煜科技有限公司 | Vertical crystal boat for heat treatment of semiconductor vertical furnace |
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