TWM604050U - Conductive laminated structure and foldable electronic device - Google Patents

Abstract

A conductive laminated structure includes a conductive layer and a thickened layer The conductive layer extends along a first direction. The thickened layer is disposed over or under the conductive layer. The conductive laminated structure can withstand more than 40,000 folding times without breaking when the radius of curvature R = 3 mm, the folding direction is perpendicular or parallel to the first direction, and the folding angle is 180°. A foldable electronic device is also provided herein.

Description

Conductive laminated structure and folding electronic device

The present disclosure relates to conductive laminated structures, especially conductive laminated structures used in the wiring of foldable electronic devices.

Electronic components continue to be miniaturized and high-speed development. Among them, flexible electronic technology that can maintain high performance and make electronic components flexible is the most eye-catching new technology of the next generation, including flexible panels, displays, batteries, Wearable electronic devices, etc.

However, in a foldable electronic device, the wiring at the bend may be prone to breakage after multiple bends, which affects signal transmission and affects the performance of the foldable electronic device.

In view of the above problems, the purpose of the present disclosure is to provide a conductive laminate structure with a thickened layer to improve the bending resistance of the foldable electronic device.

Some embodiments of the present disclosure provide a conductive laminated structure including a conductive layer and a thickening layer. The conductive layer extends in the first direction. When the thickening layer is located above or below the conductive layer, and the conductive layered structure is bent at a radius of curvature R=3 mm, perpendicular or parallel to the extension direction of the first direction, it can withstand more than 40,000 folding times without breaking.

In some embodiments, the length of the thickening layer in the first direction is greater than 9 mm and does not exceed the length of the conductive layer extending in the first direction.

In some embodiments, the length of the thickening layer in the first direction is greater than 15 mm and does not exceed the length of the conductive layer extending in the first direction.

In some embodiments, the angle between the bending axis of the conductive laminated structure and the two ends of the thickened layer is 180° to 360°.

In some embodiments, the thickening layer increases the amount of stress strain when the conductive laminated structure is bent by 0.1 to 10%, and the radius of curvature of the conductive laminated structure is reduced by 0.5 to 3 mm.

In some embodiments, the thickening layer is located on the stress stretch side when the conductive laminated structure is bent.

In some embodiments, a foldable electronic device is proposed, which includes the conductive laminated structure described in the above and following embodiments or examples.

Some embodiments of the present disclosure provide a foldable electronic device including a display area and a non-display area. The non-display area is located outside the display area, wherein the non-display area has a plurality of wires extending along the first direction, and each of the plurality of wires includes a substrate and a conductive layer located above the substrate. The non-display area has a locally thickened area, which includes the bend of the foldable electronic device. In the locally thickened area, each of these multiple traces further includes a thickened layer, which is above or above the conductive layer. Below, and located on the side of stress stretch when the foldable electronic device is bent.

In some embodiments, in the foldable electronic device, the width of the locally thickened area extends along a second direction perpendicular to the first direction, and one of these traces has a width of W ₁ , and these traces The distance between them is P ₁ , the number of these traces is N, and the width of the locally thickened area ranges from W ₁ to (W ₁ +P ₁ ) x N.

In some embodiments, in the foldable electronic device, the length of the thickened layer along the first direction is greater than 3 mm.

In some embodiments, in the foldable electronic device, the thickening layer is formed of a metal material, and the ratio of the thickness of the thickening layer to the conductive layer is about 0.05-5.

In some embodiments, in the foldable electronic device, the thickening layer is formed of non-metallic materials or composite conductive materials, and the ratio of the thickness of the thickening layer to the conductive layer is about 0.1-50.

In some embodiments, in the foldable electronic device, the thickening layer is formed of a metal material, and the thickness of the substrate multiplied by the Young's modulus of the substrate is about 100 to 300, and the thickness of the conductive layer is multiplied by the conductive layer. The value of Young's modulus is about 20~70, and the value of thickening and increasing the Young's modulus is about 5-30.

In some embodiments, in the foldable electronic device, the thickening layer is formed of a non-metallic material or a composite conductive material, and the thickness of the substrate multiplied by the Young's modulus of the substrate is about 100 to 300. The value of the thickness multiplied by the Young's modulus of the conductive layer is about 20 to 70, and the value of the thickness of the thickened layer multiplied by the Young's modulus of the thickened layer is about 2 to 60.

In some embodiments, in the foldable electronic device, the thickening layer includes: a first polymer layer and a second polymer layer. The second polymer layer is above the first polymer layer, wherein the material of the first polymer layer is different from the material of the second polymer layer.

In some embodiments, in the foldable electronic device, the ratio of the Young's modulus of the first polymer layer to the Young's modulus of the second polymer layer is about 10 ³ to 10 ⁶ .

In some embodiments, in the foldable electronic device, the ratio of the thickness of the first polymer to the thickness of the conductive layer is about 30-100, and the ratio of the thickness of the second polymer to the thickness of the conductive layer is about 30-100. , And the ratio of the thickness of the first polymer to the thickness of the second polymer is about 0.5-2.

This disclosure provides many different implementations or examples to achieve different features of the disclosure. Specific embodiments of components and configurations are described below to simplify the present disclosure. These are of course only examples and are not intended to be limiting. For example, in the following description, the second feature is formed on or on the first feature, which may include embodiments in which the first and second features are in direct contact, and may also be included between the first and second features Additional features may be formed, so the first and second features may not be in direct contact.

Spatially relative terms, such as "below", "below", "lower", "above", "upper", and similar terms may be used here to describe one as shown in the diagram The relationship between an element or feature and another element or feature. In addition to the directions depicted in the drawings, relative terms in space are intended to cover different orientations of devices or equipment in use or operation. The device or equipment may have other orientations (rotated by 90 degrees or other orientations), and the spatially relative terms used here may also be interpreted accordingly.

At present, in display devices, metal oxides such as indium tin oxide (ITO) are commonly used as conductive laminated materials to form traces. However, metal oxide materials such as indium tin oxide are brittle and poor in flexibility, so the conductive laminated structure made is easy to break. In addition, in the conductive laminate structure with nanosilver as the conductive layer, since the bending area of the display device still contains other metal wires in addition to the nanosilver wire, the stress value that the metal material itself can withstand is relatively small. It is easy to produce deformation and increase the resistance value.

There are two key points in the layout design of the folding electronic device: First, because the bend must withstand tens of thousands of times of folding, the bend must have a certain structural strength; second, the wiring of the folding electronic device must have Better foldability, that is, a smaller bending radius of curvature.

Some embodiments of the present disclosure provide a conductive laminate structure, which adds a thickening layer on the stretched side of the bending part that bears the greatest stress, so that the folding characteristics are improved when the radius of curvature is small.

In some embodiments, the conductive laminated structure can be formed as a trace of an electronic device, and is applied to a foldable electronic device, for example, an electronic device with a panel, such as a mobile phone, a tablet, a wearable electronic device (such as a smart bracelet). , Smart watches, virtual reality devices, etc.), TVs, monitors, notebook computers, e-books, digital photo frames, navigators, or the like.

FIG. 1A is a schematic diagram of a panel according to some embodiments of the present disclosure. The panel 100 is a foldable panel, which can be bent along the line AA as the axis (the direction in which the wires extend vertically), or bend along the line BB as the axis (the direction in which the wires extend in parallel). A plurality of traces 110 are provided on the edge of the panel 100 to conduct signals. As shown in the figure, the position where the trace 110 of the panel 100 is located has a plurality of locally thickened regions 112, 114, and 116.

FIG. 1B is a partial cross-sectional schematic diagram of the trace (conductive laminated structure) along the line CC in the locally thickened region 114 of FIG. 1A according to some embodiments. The conductive laminated structure 120 includes a substrate 122, a metal layer 124 above the substrate 122, a thickened layer 126 above the metal layer 124, and a conductive layer 128 above the thickened layer 126. Among them, the substrate 122, the metal layer 124, and the conductive layer 128 are layers that are also present in other areas of the wiring 110. In some embodiments, a thickening layer 126 is added between the metal layer 124 and the conductive layer 128 in a local area of the trace 110 (for example, in the conductive laminated structure 120). In other embodiments, the length of the thickening layer 126 along the extending direction of the trace 110 is not greater than the length of the conductive layer 128.

In some embodiments, the material of the substrate 122 may be polyethylene terephthalate (PET), cyclic olefin polymer (Cyclo olefin polymer, COP), polyimide (PI), polyimide Polycarbonate (PC), colorless polyimide (CPI), polyethylene naphthalate (PEN), or the like. In some embodiments, the material of the metal layer 124 may be gold, palladium, silver, copper, nickel, alloys thereof, or combinations thereof. In some embodiments, the material of the conductive layer 118 can be indium tin oxide (ITO), nano silver wire, metal mesh, conductive polymer (for example: poly(3,4-ethylenedioxythiophene)/poly (Styrene sulfonic acid) (PEDOT/PSS)), carbon nanotubes, graphene, or the like.

In some embodiments, the material of the thickening layer 126 may be a metal, a non-metal, or a composite conductive material. The metal may be, for example, gold, palladium, silver, copper, nickel, alloys thereof, or combinations thereof. The non-metal can be, for example, a polymer insulating material (for example, a protective layer) or a polymer conductive material (for example: PEDOT/PSS). The composite conductive material can be, for example, silver nano/carbon black/carbon nanotube/graphene doped metal particles and resin. In some embodiments, the material of the thickened layer has good connection and adhesion with the material of the underlying layer to form a good conductor.

In some embodiments, the formation of the thickening layer can be achieved through a patterning process, such as: Lithography, Inkjet Printing (IJP), Spraying, Screen printing, Flexographic Printing Flexo printing), or similar.

Please refer to FIG. 1C. In other embodiments, the trace portion (conductive laminate structure) along the line CC in the locally thickened region 114 of FIG. 1A is the conductive laminate structure 130 shown in FIG. 1C. The conductive laminated structure 130 includes a substrate 132, a conductive layer 134 above the substrate 132, a metal layer 136 above the conductive layer 134, and a thickening layer 138 above the metal layer 136. Among them, the substrate 132, the conductive layer 134, and the metal layer 136 are layers that are also present in other areas of the wiring 110. In some embodiments, a thickening layer 138 is added above the conductive layer 134 and the metal layer 136 in a local area of the trace 110 (for example, in the conductive laminated structure 130). In other embodiments, the length of the thickening layer 138 along the extending direction of the trace 110 is not greater than the length of the conductive layer 134.

The material of each layer of the conductive laminate structure 130 may be the same as the material of each layer of the conductive laminate structure 120 in FIG. 1B, and may be formed by the same process as described above.

Please refer to FIG. 1D. In still other embodiments, the trace portion (conductive laminate structure) along the line CC in the locally thickened region 114 of FIG. 1A is the conductive laminate structure 140 shown in FIG. 1D. . The conductive laminated structure 140 includes a substrate 142, a metal layer 144 above the substrate 142, a conductive layer 146 above the metal layer 144, and a thickening layer 148 above the conductive layer 146. Among them, the substrate 142, the metal layer 144, and the conductive layer 146 are layers that are also present in other areas of the wiring 110. In some embodiments, a thickening layer 148 is added above the metal layer 144 and the conductive layer 146 in a local area of the trace 110 (for example, in the conductive laminated structure 140). In other embodiments, the length of the thickening layer 138 along the extending direction of the trace 110 is not greater than the length of the conductive layer 134.

The material of each layer of the conductive laminate structure 140 may be the same as the material of each layer of the conductive laminate structure 120 in FIG. 1B, and may be formed by the same process as described above.

Please refer to FIG. 1E, which is an enlarged schematic view of the locally thickened area 114 in FIG. 1A. The width dimension of the wiring 110 is W ₁ , the spacing dimension between the wirings is P ₁ , and the dashed line is the bending line when the device is bent. In some embodiments, the area with the thickened layer is in the wiring portion of the non-display area. In the first direction (the direction in which the trace extends, that is, the y direction), the length of the region with the thickened layer is L ₁ .

In some embodiments, in the second direction (the direction perpendicular to the first direction, that is, the x-direction), the width of the thickened layer may be the width of a single trace 110, that is, individual thickened layers are located in Different traces. In other words, the width dimension of the thickened layer is W ₁ . In other embodiments, when the thickened layer is formed of a non-metallic material, such as a polymer material, a whole thickened layer can be formed in the range of the plurality of traces 110, that is, a single thickened layer A conductive layer covering a plurality of traces 110. That is, when there are N traces, the width dimension Wt of the thickened layer is equal to or slightly larger than N x W ₁ + (N-1) x P ₁ . Alternatively, the width dimension W _t of the thickened layer is approximately equal to N x (W ₁ + P ₁ ). Therefore, the width dimension of the thickened layer in the second direction may range between about W ₁ and about (W ₁ + P ₁ ) x N.

2A and 2B show schematic diagrams of the bending area of the conductive laminated structure in a bent state. The length of the area covered by the thickened layer is related to the radius of curvature and the bending angle during bending. In the conductive laminated structure 20 shown in FIG. 2A, the conductive laminated structure extends along the first direction (x direction), and the thickening layer 26 is located above the substrate 22 and the wiring material layer (metal or non-metal) 24. In Figure 2A, the radius of curvature is R ₁ , the bending angle is θ ₁ , and the length of the thickened layer 26 is W ₁ . In the conductive laminated structure 30 in FIG. 2B, the radius of curvature is R ₂ , the bending angle is θ ₂ , and the thickening layer 36 is located above the substrate 32 and the wiring material layer 34 and has a length of W ₂ .

In some embodiments, the length of the thickened layer in the first direction depends on the radius of curvature and the bending angle of the foldable electronic device. In some embodiments, the radius of curvature of the conductive laminated structure is 1 mm, the bending angle is 180 degrees, and the length of the thickened layer in the first direction is at least 3 mm.

In some embodiments, the conductive laminated structure extends along the first direction, and the length of the thickening layer in the bending area in the first direction depends on the curvature radius and the bending angle of the electronic component device when the electronic component device is bent. The layer length must be at least greater than the arc length range corresponding to the radius of curvature of 180°.

In some embodiments, the length of the thickened layer is greater than 15 millimeters (mm), and the angle between the bending axis and the two ends of the thickened layer is 180°~360° (varies with the length of the thickened layer); With the conductive laminated structure provided with the thickening layer, the conductive laminated structure in the embodiment of the present disclosure can increase the amount of stress strain during bending by 0.1 to 10%, and the radius of curvature of the conductive laminated structure can be reduced by 0.5 to 3 mm.

In some embodiments, the conductive layered structure extends along the first direction, and the length of the thickened layer in the first direction is greater than 9 mm. When bent with a radius of curvature of about 3 mm, the center point of the radius of curvature and the thickness increase The angle between the two ends of the layer is about 180°.

In some other embodiments, the conductive laminated structure extends along the first direction, and the length of the thickened layer in the first direction is greater than 15 mm. When bending with a radius of curvature of about 5 mm, the center point of the radius of curvature and the increase The angle between the two ends of the thick layer is about 180°.

In some embodiments, the conductive layer extends in the first direction, and the ratio of the length of the thickening layer in the first direction to the length of the conductive layer extending in the first direction is 0.001 to 1, such as 0.001, 0.005, 0.01, 0.02, 0.05 , 0.08, 0.1, 0.2, 0.5, 0.8.

In some embodiments, the conductive stack of the present disclosure can be applied to the wiring of a foldable electronic device. The foldable electronic device includes a first part, a foldable area connected to the first part, and a second part connected to the foldable area. The wiring includes a thickened layer in the foldable area, which is located on the side where the foldable electronic device is subjected to tensile stress when folded, so as to reduce the risk of wiring breakage. The angle of the first part and the second part when the foldable electronic device is not folded may be 150°-180° or 180°-210°, and the angle of the first part and the second part when the foldable electronic device is folded It may be 0 degrees-30 degrees or 330 degrees-360 degrees.

When the conductive stacked structure is formed as a conductive trace and is applied to a folding electronic device, under the action of multiple bending stresses, the resistance change (increase) of the conductive trace should be as small as possible. Once the conductive traces are cracked or broken, the resistance of the conductive traces increases or even fails, which may cause performance degradation or even failure of the foldable electronic device. Among them, the wire resistance defined by the definition of fracture as conductive increases by more than 10%.

The following describes the test results of the bending test of the conductive laminated structure according to the embodiment of the present application in combination with a comparative example (see FIGS. 3A to 3B) and an experimental example (see FIGS. 4 to 4C).

The bending test was performed using a bending machine model DMLHP-CS produced by Yuasa Battery Co., Ltd. to test the conductive laminate structures of each embodiment and comparative example. The test conditions are that the radius of curvature is 3 mm, the bending frequency is 30 times per minute, and the maximum folding force is 4 Nm. Then record the number of bending times and the resistance change percentage of different conductive laminated structures.

FIG. 3A shows a schematic diagram of the conductive laminated structure 40 in a bent state according to some comparative examples; FIG. 3B shows a schematic diagram of the conductive laminated structure 40 in a non-flexed state. The conductive laminated structure 40 includes a substrate 42 and a metal layer 44 on the substrate 42. In addition, the line length of the conductive laminated structure 40 is 100 μm. In the conductive stack 40, the material of the substrate 42 is PET, the thickness is 50 microns, and the Young's modulus is 2 to 3 GP. The material of the metal layer 44 is a copper layer, the thickness is 0.3 micrometers, and the Young's modulus is 140 Gpa. The broken line shown in Fig. 3B is the position of the neutral axis at the time of bending.

The following Table 1 shows the results of the bending test conducted on the conductive laminated structures of different comparative examples with a radius of curvature of 3 mm and an angle of 180°. The metal layer (copper layer) in the comparative example is formed by sputtering or different electroplating processes (ie, electroless plating (1), (2), (3)).

Table I How the copper layer is formed Change of trace resistance (R _L ) (%) 1,000 times 5 thousand times 20,000 times 36,000 times 60,000 times 100,000 times 200,000 times Sputtering 2.0 4.9 6.6 10.8 - - - Electroplating (1) 0 0.5 twenty three 92 - - - Electroplating (2) 0.7 2.1 110.2 40786 - - - Electroplating (3) -0.5 8.9 25.1 630 - - -

It can be seen from Table 1 that after 20,000 times of folding with a radius of curvature of 3 mm, the electrical resistance of the conductive laminate structure of each of the above-mentioned comparative examples increased significantly. Among them, the resistance of the conductive stacked wiring formed by electroplating (1), electroplating (2), and electroplating (3) processes is greater than 10%.

FIG. 4A illustrates a schematic diagram of the conductive laminated structure 50 in a non-bending state according to some experimental examples. The conductive laminated structure 50 includes a substrate 52, a conductive layer 54 above the substrate 52, a metal layer 56 above the conductive layer 54, and a thickening layer 58 above the metal layer 56. Among them, the material of the thickening layer 58 is copper. The broken line shown in Fig. 4A is the position of the neutral axis at the time of bending.

FIG. 4B illustrates a schematic diagram of the conductive laminated structure 60 in a non-bending state according to some experimental examples. The conductive laminated structure 60 includes a substrate 62, a conductive layer 64 above the substrate 62, a metal layer 66 above the conductive layer 64, and a thickening layer 68 above the metal layer 66. Wherein, the substrate 62 is formed of PET and has a thickness of 50 microns. The conductive layer 64 includes nano-silver material and has a thickness of 0.2-0.5 μm. The material of the metal layer 66 is copper, and the thickness is 0.2-0.5 μm. The thickening layer 68 is a polymer layer whose material is acrylic and has a thickness of 5 to 10 μm. The broken line shown in Fig. 4B is the position of the neutral axis at the time of bending.

The following Table 2 shows the results of a bending test with a radius of curvature of 3 mm and an angle of 180° for the conductive laminated structure of the embodiment shown in FIG. 4B. The control group is a conductive stack without polymer coating (without thickening layer).

Table II How the copper layer is formed Stacked design Change of trace resistance (R _L ) (%) 10,000 times 20,000 times 40,000 times 165,000 times Electroplating (1) Uncoated polymer 0 27 86 - Coated polymer layer -1 - 1 3536% Electroplating (2) Uncoated polymer 0.4 57 6589 - Coated polymer layer -1 - 3 9653%

It can be seen from Table 2 that after 40,000 folds, the resistance of the conductive laminate structure of the above embodiments did not change significantly; on the contrary, the trace resistance of the conductive laminate structure without polymer coating increased significantly, representing There is a broken line. Therefore, the conductive laminate structure of the example has better bending resistance, which is significantly better than the conductive laminate structure of the control group without polymer coating.

FIG. 4C is a schematic diagram of the conductive laminated structure 70 in a non-bending state according to some experimental examples. The conductive laminate 70 includes a substrate 72, a conductive layer 74 above the substrate 72, a metal layer 76 above the conductive layer 74, a first polymer layer 78 above the metal layer 76, and a first polymer layer 78 above the first polymer layer 78. The second polymer layer 80. That is, in the conductive laminated structure 70, the thickening layer is a multilayer formed of heterogeneous polymers, including the first polymer layer 78 and the second polymer layer 80. In the conductive laminated structure 70, the substrate 72 is formed of PET and has a thickness of 50 microns. The conductive layer 74 includes nanosilver material and has a thickness of 100 nm or less. The material of the metal layer 76 is copper, and the thickness is 0.2 to 0.5 μm. The material of the first polymer layer 78 is Optical Adhesive (OCA), and the thickness is 50 microns. The material of the second polymer layer 80 is PET, and the thickness is 50 microns. The broken line shown in Fig. 4C is the position of the neutral axis at the time of bending.

The following Table 3 shows the results of bending tests conducted on the conductive laminated structures of different embodiments with a radius of curvature of 3 mm and an angle of 180°. The control group is a conductive stack without polymer coating (without thickening layer). In Table 3, the conductive laminate structure containing the OCA layer/PET layer corresponds to the structure of the embodiment shown in Fig. 4C.

Table Three How the copper layer is formed Stacked design Change of trace resistance (R _L ) (%) 10,000 times 20,000 times 40,000 times 60,000 times 165,000 times 200,000 times Electroplating (1) Uncoated polymer 0 27 86 - - - OCA layer/PET layer - - 1 1 1 1 Electroplating (2) Uncoated polymer 0.4 57 6589 - - - OCA layer/PET layer - - 1 2 2 2 Electroplating (3) Uncoated polymer 9.7 34 466 - - - OCA layer/PET layer - - 0 1 1 0

It can be seen from Table 3 that after 40,000 times of folding, the resistance of the conductive laminate structure of the above embodiment with the first polymer layer and the second polymer layer did not change significantly; and after 60,000 times, 16 After 5,000 times and 200,000 times of folding, the resistance of the above-mentioned conductive laminate structure did not change significantly. That is, after many times of folding, the conductive laminate structure did not break. Therefore, the conductive laminate structures of these examples have better bending resistance, which is significantly better than the control conductive laminate structures without polymer coating.

FIG. 5A to FIG. 5D are schematic diagrams of conductive laminated structures according to some embodiments of the present disclosure.

FIG. 5A shows a conductive laminated structure 210, which includes a substrate 212, a wiring material layer 214 above the substrate 212, and a thickening layer 216 above the wiring material layer 214. The material of the wiring material layer 214 can be metal, non-metal, or a combination thereof. The material of the thickening layer 216 may be metal, non-metal, or composite conductive material.

In some embodiments, when the material of the thickening layer 216 is metal, the ratio of the thickness of the thickening layer 216 to the thickness of the wiring material layer 214 is 0.05 to 5, for example, 0.05 to 0.5, 0.1 to 1, 0.5 to 2 , Or 2~5.

In some embodiments, when the material of the thickening layer 216 is a non-metallic or composite conductive material, the ratio of the thickness of the thickening layer 216 to the thickness of the wiring material layer 214 is 0.1-50, such as 0.1-10, 10-20 , Or 20~50.

In some embodiments, the thickness (unit: μm) of the substrate 212 of the conductive laminated structure 210 multiplied by the Young's modulus (unit: Gpa) is about 100 to 300, and the thickness of the wiring material layer 214 is multiplied by the Young's modulus. The value of the modulus is about 20 to 70, the material of the thickened layer 216 is metal, and the thickness of the thickened layer 216 multiplied by the Young's modulus is about 5 to 30.

In some embodiments, the thickness of the substrate 212 of the conductive laminated structure 210 multiplied by the Young's modulus is about 100 to 300, and the thickness of the wiring material layer 214 multiplied by the Young's modulus is about 20 to 70. The material of the thickening layer 216 is a non-metal or composite conductive material, and the value of the thickness of the thickening layer 216 multiplied by the Young's modulus is about 2-60.

FIG. 5B shows a conductive laminated structure 220, which includes a substrate 222, a wiring material layer 224 above the substrate 222, a first polymer layer 226 above the wiring material layer 224, and a first polymer layer 226 The second polymer layer 228. In the conductive laminated structure 220, the materials of the substrate 222 and the wiring material layer 224 are similar to the substrate 212 and the wiring material layer 214 of the conductive laminated structure 210 shown in FIG. 5A. In the conductive laminated structure 220, the thickening layer is a multilayer formed of heterogeneous polymers, including a first polymer layer 226 and a second polymer layer 228. The first polymer layer 226 and the second polymer layer 228 are different polymer materials. In some embodiments, the ratio of the Young's modulus of the first polymer layer 226 to the second polymer layer 228 is about 10 ³ to 10 ^6. For example, the first polymer layer 226 is formed of OCA, and the second polymer layer The layer 228 is formed of PET. In the conductive laminated structure 220, the ratio of the thickness of the first polymer layer 226 to the thickness of the wiring material layer 224 is about 30 to 100, and the ratio of the thickness of the second polymer layer 228 to the thickness of the wiring material layer 214 is It is about 30 to 100, and the ratio of the thickness of the first polymer layer to the thickness of the second polymer layer is about 0.5 to 2.

In some embodiments, the thickness of the substrate 222 of the conductive laminated structure 220 multiplied by the Young's modulus is about 100 to 300, and the thickness of the wiring material layer 224 multiplied by the Young's modulus is about 20 to 70. The value of the thickness of one polymer layer 226 multiplied by the Young's modulus is about 2-60, and the value of the thickness of the second polymer layer 228 multiplied by the Young's modulus is about 100-300.

FIG. 5C shows a conductive laminated structure 230, which includes a substrate 232, a catalyst layer 234 above the substrate 232, a conductive layer 236 above the catalyst layer 234, and a thickening layer above the conductive layer 236 238. In the conductive laminated structure 230, the substrate 232 and the thickened layer 238 are similar to the substrate 212 and the thickened layer 216 in the conductive laminated structure 210 shown in FIG. 5A. In some embodiments, the material of the catalyst layer 234 may be any one of metals such as palladium, rhodium, platinum, iridium, osmium, gold, nickel, and iron. In the conductive laminated structure 230, the material of the conductive layer 236 is metal, for example, a copper layer can be formed on the catalyst layer 234 through an electroless plating process, and the ratio of the thickness of the conductive layer 236 to the thickness of the catalyst layer 234 is about 0.5~5, or about 2~10.

FIG. 5D shows a conductive laminate structure 240, which includes a substrate 242, a catalyst layer 244 above the substrate 232, a conductive layer 246 above the catalyst layer 244, a first polymer layer 248 above the conductive layer 246, and The second polymer layer 250 above the first polymer layer 248. In the conductive laminate structure 240, the substrate 242, the first polymer layer 248, and the second polymer layer 250 are similar to the substrate 222, the first polymer layer 226, and the second polymer layer in the conductive laminate structure 220 shown in FIG. 5B. Two polymer layer 228. In some embodiments, the material of the catalyst layer 244 may be any one of metals such as palladium, rhodium, platinum, iridium, osmium, gold, nickel, and iron. In the conductive laminated structure 240, the material of the conductive layer 246 is metal. For example, a copper layer can be formed on the catalyst layer 244 through an electroless plating process, and the ratio of the thickness of the conductive layer 246 to the thickness of the catalyst layer 244 is about 0.5~5, or about 2~10.

6A to 6F are schematic diagrams illustrating the application of the conductive laminated structure according to some embodiments to a single-sided folding electronic device.

FIG. 6A is a schematic view when the conductive laminated structure 310 is folded in a U shape, and FIG. 6B is a schematic view when the conductive laminated structure 310 is unfolded.

The conductive laminated structure 310 includes a substrate 312, a metal layer 314 above the substrate 312, and a conductive layer 318 above the metal layer. The thickening layer 316 is formed between the metal layer 314 and the conductive layer 318 formed at the bend. In some embodiments, at the bend, the metal layer 314 is locally thickened first to form a thickened layer 316 made of metal or composite conductive compound, and then coated with a conductive layer 318 containing silver nanowires.

FIG. 6C is a schematic diagram when the conductive laminated structure 330 is folded in a U shape, and FIG. 6D is a schematic diagram when the conductive laminated structure 330 is unfolded.

The conductive laminated structure 330 includes a substrate 332, a metal layer 334 above the substrate 332, and a conductive layer 336 above the metal layer, and the thickening layer 338 is formed on the conductive layer 336 formed at the bend. In some embodiments, a conductive layer 336 containing silver nanowires is first coated at the bend, and then a thickened layer 338 made of metal, non-metal, or composite conductive material is formed locally.

FIG. 6E is a schematic diagram when the conductive laminated structure 350 is folded in a U shape, and FIG. 6F is a schematic diagram when the conductive laminated structure 350 is unfolded.

The conductive laminated structure 350 includes a substrate 352, a conductive layer 354 above the substrate 352, and a metal layer 356 above the conductive layer 354, and the thickening layer 358 is formed on the metal layer 356 formed at the bend. In some embodiments, at the bend, a thickened layer 358 made of metal, non-metal, or a composite conductive material is locally formed on the metal layer 356.

7A to 7F are schematic diagrams illustrating the application of the conductive laminated structure according to some embodiments to a double-sided folding electronic device.

FIG. 7A is a schematic diagram when the conductive laminated structure 410 is folded in an S shape, and FIG. 7B is a schematic diagram when the conductive laminated structure 410 is unfolded.

The conductive laminated structure 410 includes a structure layer 414 having a double-sided metal film, conductive layers 412 and 418 on both sides of the structure layer 414 having a double-sided metal film, and a thickening layer 416 located at a bend.

The structural layer 414 with double-sided metal films includes a substrate 414B, and metal layers 414A and 414C are formed on both sides of the substrate 414B. At the bend, the thickening layer 416 is located between the metal layer 414A and the conductive layer 412, and between the metal layer 414C and the conductive layer 418. In some embodiments, at the bend, the metal layer 314 is locally thickened first to form a thickened layer 416 made of metal or composite conductive material, and then coated with conductive layers 412 and 418 containing silver nanowires.

FIG. 7C is a schematic diagram when the conductive laminated structure 430 is folded in an S shape, and FIG. 7D is a schematic diagram when the conductive laminated structure 430 is unfolded.

The conductive laminated structure 430 includes a structure layer 434 with a double-sided metal film, conductive layers 432 and 436 on both sides of the structure layer 434 with a double-sided metal film, and a thickened layer 438 located at a bend.

The structural layer 434 with double-sided metal films includes a substrate 434B, and metal layers 434A and 434C are formed on both sides of the substrate 434B. At the bend, the thickened layer 438 is located on the conductive layers 432 and 436. In some embodiments, after the conductive layers 432 and 436 containing silver nanowires are first coated, the thickened layer 438 made of metal, non-metal, or composite conductive material is formed at the bend.

FIG. 7E is a schematic diagram when the conductive laminated structure 450 is folded in an S shape, and FIG. 7F is a schematic diagram when the conductive laminated structure 450 is unfolded.

The conductive laminated structure 450 includes a structure layer 454 having a double-sided conductive film (for example, a transparent conductive layer), metal layers 452 and 456 on both sides of the structure layer 454 having a double-sided conductive film, and Thickening layer 458.

The structure layer 454 having a double-sided conductive film includes a substrate 454B, and conductive layers 454A and 454C are formed on both sides of the substrate 454B. In some embodiments, at the bend, a thickened layer 458 made of metal, non-metal, or composite conductive material is locally formed on the metal layers 452 and 456.

The following provides a method for manufacturing a foldable device with a conductive laminated structure with a thickened layer.

Figures 8A to 8I illustrate a process according to some embodiments to form a foldable electronic device whose layers sequentially include a single-side metal film (SMF) and a selective growth metal (selective) growth metal, SGM) and conductive layer, in which the thickening layer is a metal material.

As shown in FIG. 8A, a substrate 502 having a metal layer 504 is provided. It is possible to form a metal material such as copper on the substrate 502 by sputtering or electroplating.

As shown in FIG. 8B, a photoresist layer 506 is then formed on the metal layer 504, and exposure and development are performed to pattern the photoresist layer 506.

As shown in FIG. 8C, an etching process is then performed to etch a portion of the metal layer 504 that is not covered by the patterned photoresist layer 506 to form a patterned metal layer 504. Then, the photoresist layer 506 is stripped off.

As shown in FIG. 8D, a photoresist layer 510 is formed between the intervals of the patterned metal layer 504, and exposure and development are performed. Then, a thickening layer 508 is selectively grown on the metal layer 504. In some embodiments, a copper material is formed on the metal layer 504 via sputtering or electroplating.

As shown in FIG. 8E, the photoresist layer 510 is removed, and a conductive layer 512 is provided on the substrate 502, the metal layer 504, and the thickening layer 508. In some embodiments, a conductive material containing silver nanowires or ITO may be formed as the conductive layer 512 by coating.

As shown in FIG. 8F, a photoresist layer 514 is provided, and exposed and developed to form a patterned photoresist layer 514.

As shown in FIG. 8G, etching is then performed to etch the conductive layer 512, the thickening layer 508, and the metal layer 504 that are not covered by the patterned photoresist layer. Therefore, a plurality of separate traces are formed.

As shown in FIG. 8H, the photoresist layer 514 is peeled off.

As shown in FIG. 8I, an over coating 516 is provided on the substrate 502, the metal layer 504, the thickening layer 508, and the conductive layer 512. In the structure shown in FIG. 8I, the thickening layer 508 is located between the metal layer 504 and the conductive layer 512 in the wiring.

Figures 9A to 9J illustrate a process according to some embodiments to form a foldable electronic device whose layers include a single-sided metal film, a conductive layer, and a selectively grown metal, in which the thickened layer is a metal material.

As shown in FIG. 9A, a substrate 522 having a metal layer 524 is provided. A metal material such as copper may be formed on the substrate 522 by sputtering or electroplating.

As shown in FIG. 9B, a photoresist layer 526 is formed on the metal layer 524, and a patterned photoresist layer 526 is formed by exposure and development.

As shown in FIG. 9C, an etching process is then performed to etch the part of the metal layer 524 that is not covered by the patterned photoresist layer 526 to form a patterned metal layer. Then, the photoresist layer 526 is peeled off.

As shown in FIG. 9D, a conductive layer 528 is provided on the substrate 522 and the metal layer 524. A conductive material containing silver nanowires or ITO can be formed as the conductive layer 528 by coating.

As shown in FIG. 9E, a photoresist layer 530 is formed, and a patterned photoresist layer 530 is formed by exposure and development.

As shown in FIG. 9F, a thickening layer 532 is provided in an area above the conductive layer that is not covered by the patterned photoresist layer 530. In some embodiments, selective growth, such as sputtering or electroplating a copper material on the conductive layer 528 can be performed.

As shown in FIG. 9G, the photoresist layer 530 is peeled off.

As shown in FIG. 9H, a photoresist layer 534 is formed, and a patterned photoresist layer 534 is formed by exposure and development.

As shown in FIG. 9I, etching is then performed to remove the thickening layer 532, the conductive layer 528, and the metal layer 524 that are not covered by the patterned photoresist layer 534. Therefore, a plurality of separate traces are formed. Then, the photoresist layer 534 is peeled off.

As shown in FIG. 9J, a protective layer 536 is provided on the substrate 522, the metal layer 524, the conductive layer 528, and the thickening layer 532. In the structure shown in FIG. 9J, the thickening layer 532 is located above both the metal layer 524 and the conductive layer 528 in the wiring.

Figures 10A to 10G illustrate a process according to some embodiments to form a foldable electronic device whose layers include a conductive layer, a metal film on one side, and a selectively grown metal, in which the thickened layer is a metal material.

As shown in FIG. 10A, a substrate 602 including a conductive layer 604 (transparent conductive film) is provided first, and then a metal layer 606 is provided on the conductive layer 604. In some embodiments, the copper material may be formed on the conductive layer 604 through sputtering or electroplating.

As shown in FIG. 10B, a photoresist layer 608 is formed, and a patterned photoresist layer 608 is formed by exposure and development.

As shown in FIG. 10C, a thickening layer 610 is provided on the portion of the metal layer 606 that is not covered by the photoresist layer 608. In some embodiments, the copper material can be disposed on the metal layer 606 through selective growth of a metal layer, such as sputtering or electroplating.

As shown in FIG. 10D, the photoresist layer 608 is peeled off.

As shown in FIG. 10E, a photoresist layer 612 is provided on the thickening layer 610 and the metal layer 606, and a patterned photoresist layer 612 is formed by exposure and development.

As shown in FIG. 10F, etching is then performed to remove the thickening layer 610, the metal layer, and the conductive layer 604 that are not covered by the patterned photoresist layer 612. Therefore, a plurality of separate traces are formed.

As shown in FIG. 10G, the metal layer 606 in the middle area (for example, the display area that will be formed later as an electronic device) is removed. After that, a protective layer 614 is disposed on the thickening layer 610, the metal layer 606, and the conductive layer 604. In the structure shown in FIG. 10G, the thickening layer 610 is located above the conductive layer 604 and the metal layer 606 in the wiring.

Figures 11A to 11H illustrate a process according to some embodiments to form a foldable electronic device. The layers of the foldable electronic device include a metal layer, a conductive layer, and a thickened layer in sequence. The thickened layer is made of a non-metallic material, such as a polymer.物材料。 Material.

As shown in FIG. 11A, a substrate 702 having a metal layer 704 is provided. It is possible to form a metal material such as copper on the substrate 702 by sputtering or electroplating.

As shown in FIG. 11B, a photoresist layer 706 is formed on the metal layer 704, and a patterned photoresist layer 706 is formed by exposure and development.

As shown in FIG. 11C, the metal layer 704 that is not covered by the patterned photoresist layer 706 is etched. Then the photoresist layer 706 is stripped off.

As shown in FIG. 11D, a conductive layer 708 is provided on the substrate 702 and the metal layer 704. A conductive material containing silver nanowires or ITO can be formed as the conductive layer 708 by coating.

As shown in FIG. 11E, a photoresist layer 710 is formed on the conductive layer 708, and a patterned photoresist layer 710 is formed by exposure and development.

As shown in FIG. 11F, etching is then performed to remove the portions of the conductive layer 708 and the metal layer 704 that are not covered by the patterned photoresist layer 710 to form a plurality of separated traces.

As shown in FIG. 11G, the photoresist layer 710 is then peeled off. In the subsequent manufacturing process, a protective layer 712 is formed on each trace. The protective layer 712 may be formed of a polymer material.

As shown in FIG. 11H, a thickening layer 714 is then formed on the protective layer 712. The thickening 714 may be formed of another polymer material different from the protective layer 712.

Figures 12A to 12H illustrate a process according to some embodiments to form a foldable electronic device. The layers include a conductive layer, a metal layer, and a thickened layer in sequence. The thickened layer is made of a non-metallic material, such as polymer.物材料。 Material.

As shown in FIG. 12A, first, a substrate 722 including a conductive layer 724 is provided. The conductive layer 724 may, for example, include silver nanowires. In some embodiments, there is a protective layer (not shown) on the conductive layer 724. Afterwards, a metal layer 726 is disposed on the conductive layer 724. In some embodiments, the copper material may be formed on the conductive layer 724 through sputtering or electroplating.

As shown in FIG. 12B, a photoresist layer 728 is formed on the metal layer 726, and a patterned photoresist layer 728 is formed by exposure and development.

As shown in FIG. 12C, the metal layer 726 and the conductive layer 724 that are not covered by the patterned photoresist layer 728 are etched. Therefore, a plurality of separate traces are formed.

As shown in FIG. 12D, the photoresist layer 728 in the middle area is peeled off.

As shown in FIG. 12E, the metal layer 726 in the middle area is removed.

As shown in FIG. 12F, the photoresist layer 728 is peeled off.

As shown in FIG. 12G, a first polymer layer 730 is formed on each trace and on the conductive layer 724.

As shown in FIG. 12H, a second polymer layer 732 is formed on the substrate 722, the conductive layer 724, and the metal layer 726 on the periphery of the device (ie, the non-display area). In the structure shown in FIG. 12H, the second polymer layer 732 or the combination of the first polymer layer 730 and the second polymer layer 732 is equivalent to a thickened layer of the trace.

The conductive laminated structure of the present disclosure enables the foldable electronic device to have a smaller bending radius of curvature, enhance the foldability, and the routing can still have better reliability after multiple bendings, improve product quality and increase The life of the device.

Several implementation manners have been summarized above so that those skilled in the art can better understand various aspects of the present disclosure. Those who are familiar with this technology should understand that they can use the present disclosure as a basis for designing or modifying other processes and structures to achieve the same purpose and/or the same advantages as the embodiments or examples introduced herein. Those skilled in the art will also understand that these equal constructions do not depart from the spirit and scope of the present disclosure, and they may make various changes, substitutions, and alterations without departing from the spirit and scope of the present disclosure.

20: conductive laminated structure 22: substrate 24: routing material layer 26: thickening layer 30: conductive laminated structure 32: substrate 34: routing material layer 36: thickening layer 40: conductive laminated structure 42: substrate 44: metal layer 50: conductive laminated structure 52: substrate 54: conductive layer 56: metal layer 58: thickened layer 60: conductive laminated structure 62: substrate 64: conductive layer 66: metal layer 68: thickened layer 70: conductive laminated structure 72: substrate 74: conductive layer 76: metal layer 78: first polymer layer 80: second polymer layer 100: panel 110: traces 112, 114, 116: area 120: conductive laminated structure 122: substrate 124: metal layer 126: Thickening layer 128: conductive layer 130: conductive layered structure 132: substrate 134: conductive layer 136: metal layer 138: thickened layer 140: conductive layered structure 142: substrate 144: metal layer 146: conductive layer 148: thickened layer 210 : Conductive laminate structure 212: substrate 214: wiring material layer 216: thickening layer 220: conductive laminate structure 222: substrate 224: wiring material layer 226: first polymer layer 228: second polymer layer 230: conductive laminate Structure 232: substrate 234: catalyst layer 236: conductive layer 238: thickening layer 240: conductive laminated structure 242: substrate 244: catalyst layer 246: conductive layer 248: first polymer layer 250: second polymer layer 310 : Conductive layered structure 312: substrate 314: metal layer 316: thickened layer 318: conductive layer 330: conductive layered structure 332: substrate 334: metal layer 336: conductive layer 338: thickened layer 350: conductive layered structure 352: substrate 354 : Conductive layer 356: metal layer 358: thickened layer 410: conductive laminated structure 412: conductive layer 414: structural layer with double-sided metal film 414A: metal layer 414B: substrate 414C: metal layer 416: thickened layer 418: conductive Layer 430: Conductive laminated structure 432: Conductive layer 434: Structural layer with double-sided metal films 434A: Metal layer 434B: Substrate 434C: Metal layer 436: Conductive layer 438: Thickening layer 450: Conductive laminated structure 452: Metal layer 454 : Structural layer with double-sided conductive film 454A: conductive layer 454B: substrate 454C: conductive layer 456: metal layer 458: thickening layer 502: substrate 504: metal layer 506: photoresist layer 508: thickening layer 510: photoresist Layer 512: conductive layer 514: photoresist layer 516: protective layer 522: substrate 524: metal layer 526: photoresist layer 528: conductive layer 530: photoresist layer 532: thickened layer 534: photoresist layer 536: protective layer 602 : Substrate 604: conductive layer 606: metal layer 608: photoresist layer 610: thickening layer 612: photoresist layer 614: protective layer 702: substrate 704: metal layer 706: photoresist layer 708: conductive layer 710: photoresist layer 712: protective layer 714: thickened layer 722: substrate 724: Conductive layer 726: metal layer 728: photoresist layer 730: first polymer layer 732: second polymer layer AA, BB, CC: line R ₁ , R ₂ : radius of curvature W ₁ , W ₂ : length θ ₁ , θ ₂ : Angle

This disclosure can be best understood by reading the following detailed description together with the accompanying drawings. It is emphasized that according to standard practice in the industry, the various features are not drawn to scale and are used for illustration purposes only. In fact, for the sake of clarity of discussion, each feature may be arbitrarily increased or decreased. Figure 1A is a schematic diagram of a panel according to some embodiments of the present disclosure. Figures 1B to 1D are partial cross-sectional views of the wiring according to some embodiments of the present disclosure. FIG. 1E is a partial enlarged view of the area 114 of the panel in FIG. 1A. 2A and 2B are schematic diagrams of the conductive laminated structure in a bent state. Fig. 3A and Fig. 3B are schematic diagrams of the folded state and the non-folded state of the conductive laminated structure of a comparative example. Figures 4A to 4C respectively show conductive laminate structures according to some experimental examples. 5A to 5D are schematic diagrams of the configuration of conductive laminate structures according to some embodiments. Fig. 6A and Fig. 6B are schematic diagrams of the conductive laminated structure in the bent state and the unfolded state according to some embodiments. FIG. 6C and FIG. 6D are schematic diagrams of the conductive laminated structure in the bent state and the unfolded state according to some embodiments. Fig. 6E and Fig. 6F are schematic diagrams of the conductive laminated structure in the bent state and the unfolded state according to some embodiments. FIG. 7A and FIG. 7B are schematic diagrams of a conductive laminated structure in a bent state and an unfolded state according to some embodiments. FIG. 7C and FIG. 7D are schematic diagrams of the conductive laminated structure in the bent state and the unfolded state according to some embodiments. FIG. 7E and FIG. 7F are schematic diagrams of the conductive laminated structure in the bent state and the unfolded state according to some embodiments. 8A to 8I are cross-sectional views of a foldable electronic device at different intermediate stages in the manufacturing process according to some embodiments of the present disclosure. 9A to 9J are cross-sectional views of a foldable electronic device at different intermediate stages in the manufacturing process according to some embodiments of the present disclosure. 10A to 10G are cross-sectional views of a foldable electronic device at different intermediate stages in the manufacturing process according to some embodiments of the present disclosure. 11A to 11H are cross-sectional views of a foldable electronic device at different intermediate stages in the manufacturing process according to some embodiments of the present disclosure. 12A to 12H are cross-sectional views of a foldable electronic device in different intermediate stages of the manufacturing process according to some embodiments of the present disclosure.

210: Conductive laminated structure

212: substrate

214: routing material layer

216: Thickened Layer

Claims (18)

A conductive laminated structure, including: A conductive layer extending along a first direction; and When a thickening layer is above or below the conductive layer, and the conductive laminated structure has a radius of curvature R=3 mm, and is bent 180° perpendicular or parallel to the first direction, it can withstand more than 40,000 folding times without breaking. The conductive laminated structure according to claim 1, wherein the length of the thickening layer in the first direction is greater than 9 mm and does not exceed the length of the conductive layer extending in the first direction. The conductive laminate structure according to claim 2, wherein the length of the thickening layer in the first direction is greater than 15 mm and does not exceed the length of the conductive layer extending in the first direction. The conductive laminated structure according to claim 1, wherein the angle between a bending axis of the conductive laminated structure and both ends of the thickened layer is 180°~360°. The conductive laminate structure according to claim 1, wherein the ratio of the length of the thickening layer in the first direction to the length of the conductive layer extending in the first direction is 0.001 to 1. The conductive laminated structure according to claim 1, wherein the thickened layer increases the amount of stress strain when the conductive laminated structure is bent by 0.1 to 10%, and the radius of curvature of the conductive laminated structure is reduced by 0.5 to 3 mm. The conductive laminated structure according to claim 1, wherein the thickening layer is located on a stress stretch side when the conductive laminated structure is bent. A foldable electronic device comprising the conductive laminated structure according to any one of claims 1 to 7. A folding electronic device, including: A display area; and A non-display area is located outside the display area, wherein the non-display area has a plurality of wires extending along a first direction, and each of the plurality of wires includes: A substrate, and A conductive layer located above the substrate; The non-display area has a locally thickened area, which includes a bend of the foldable electronic device, and each of the plurality of wires in the locally thickened area further includes a thickened layer, It is above or below the conductive layer, and is located on a stress-stretched side when the foldable electronic device is bent. The foldable electronic device according to claim 9, wherein the locally thickened area has a width extending along a second direction perpendicular to the first direction, and a width of one of the lines is W ₁ , the spacing between the traces is P ₁ , the number of the traces is N, and the width of the locally thickened region ranges from W ₁ to (W ₁ +P ₁ ) x N. The foldable electronic device according to claim 9, wherein the length of the thickened layer along the first direction is greater than 3 mm. The foldable electronic device according to claim 9, wherein the thickened layer is formed of a metal material, and the ratio of the thickness of the thickened layer to the conductive layer is about 0.05-5. The foldable electronic device according to claim 9, wherein the thickening layer is formed of a non-metallic material or a composite conductive material, and the ratio of the thickness of the thickening layer to the conductive layer is about 0.1-50. The foldable electronic device according to claim 9, wherein the thickening layer is formed of a metal material, and the thickness of the substrate multiplied by the Young's modulus of the substrate is about 100 to 300, and the conductive layer The value of the thickness multiplied by the Young's modulus of the conductive layer is about 20 to 70, and the value of the thickness of the thickened layer multiplied by the Young's modulus of the thickened layer is about 5 to 30. The foldable electronic device according to claim 9, wherein the thickening layer is formed of a non-metallic material or a composite conductive material, and the thickness of the substrate multiplied by the Young's modulus of the substrate is about 100~ 300. The value of the thickness of the conductive layer multiplied by the Young's modulus of the conductive layer is about 20 to 70, and the value of the increased thickness multiplied by the Young's modulus is about 2 to 60. The foldable electronic device according to claim 9, wherein the thickening layer comprises: A first polymer layer; and A second polymer layer above the first polymer layer, wherein the material of the first polymer layer is different from the material of the second polymer layer. The foldable electronic device according to claim 16, wherein the ratio of the Young's modulus of the first polymer layer to the Young's modulus of the second polymer layer is about 10 ³ to 10 ⁶ . The foldable electronic device according to claim 16, wherein the ratio of the thickness of the first polymer to the thickness of the conductive layer is about 30-100, and the ratio of the thickness of the second polymer to the thickness of the conductive layer is It is about 30-100, and the ratio of the thickness of the first polymer to the thickness of the second polymer is about 0.5-2.

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