TWM600002U - Photovoltaic battery structure - Google Patents

Abstract

A photovoltaic cell structure, comprising: a transparent conductive substrate, an electron transport layer, an active layer, several first etching grooves, several second etching grooves, several third etching grooves, a plurality of insulating layers, one Hole transfer layer and several conductive layers connected in series. The etching grooves are used to block the photovoltaic unit, and the etching grooves are filled and laid with a plurality of insulating layers. In addition, one of the etching grooves is filled and laid with the same material as the hole transfer layer to electrically connect the hole transfer layer and the lower conductive layer in series to form a photovoltaic cell structure. Eliminating the need for metal as the conductive layer can increase the light-receiving area of the photovoltaic material coating, and the gap between the etching groove and the filling design of the insulating layer can increase the operating margin of the photovoltaic cell, improve the yield rate and the efficiency of photoelectric conversion Use of the area.

Description

A photovoltaic cell structure

This creation is related to a photovoltaic cell structure, especially a photovoltaic cell structure with improved electrode structure.

The research of photovoltaic cells is a direction that people expect in renewable energy. Although most products that have been commercialized nowadays use silicon as the main material, organic photovoltaic cells developed using polymer materials have been favored by the industry and academia due to their simple manufacturing process, low cost, light weight, and flexibility. Attention.

At present, in the preparation of organic photovoltaic cells, coating is mostly used as a technical means to prepare photovoltaic cell thin films, which has the advantage of being able to make the thin films have better flatness and uniformity. Furthermore, the R2R process is a technology that has the potential to produce organic photovoltaic cells in a large area. It has been coordinated in the industry, and the R2R process can be well coordinated with its operation and can be produced at a lower cost. , Light weight, impact resistance and other advantages.

Recently, photovoltaic cells have been made into a translucent structure that can illuminate on both sides and have light transmission for more product applications, such as windows in buildings. However, the color limitations of the materials in the structure and the upper and lower conductive layer metals The material used as the electrical connection line will affect the light transmittance of the photovoltaic cell and even affect the photoelectric conversion efficiency of the illumination.

Further discuss the structure of photovoltaic cell photoelectric conversion devices, one of which is called photovoltaic cell, such as organic photovoltaic cell or perovskite photovoltaic cell, where the photovoltaic cell is composed of a plurality of photovoltaic units in series and parallel. Each photovoltaic unit includes an electron transport layer and an active layer (the light-absorbing layer in OPV is called BHJ layer (bulk-heterojunction layer), and it is called Perovskite in Perovskite solar cell. layer), the hole transfer layer, and the upper and lower electrode wires are connected linearly to achieve the effects of photoelectric conversion and electron transfer.

Taking organic photovoltaic cells as an example, the electron transport layer can be composed of PEI as the main component, and the active layer can be solvent-diluted P3HT/PCBM, PCPDTBT/PCBM, and P3HT/PCBM is a complex poly(3-hexylthiophene). (3-hexylthiophene), P3HT (p-type material)) polymer semiconductor and plural phenyl-C61-butyric acid methylester (phenyl-C61-butyric acid methylester, PCBM (n-type material)) mixed together, as for hole transfer The layer can be a solvent-diluted PEDOT:PSS as the main component (PEDOT:PSS), containing a plurality of EDOT (3,4-ethylenedioxythiophene monomer) polymers and a plurality of polystyrene sulfonate (sodium- p-styrenesulfonate, PSS) is mixed.

Among them, the aforementioned hole transfer layer (HTL) not only has the functional requirements of hole transfer, because the PEDOT:PSS can also be conductive, so this creation uses the conductive properties of the hole transfer layer to propose a novel photovoltaic The cell structure design can improve the traditional photovoltaic cell structure, simplify the manufacturing process and reduce the production cost, and can also improve the photoelectric conversion efficiency.

Therefore, the main purpose of this creation is to provide an improved photovoltaic cell structure, in which a hole transfer layer (HTL) is used to form a highly conductive material with an impedance below 100Ω/□ and a light transmittance above 50%. The transfer layer also has a conductive function, eliminating the need for the production of the upper conductive layer to simplify the manufacturing process and reduce the production cost of the photovoltaic cell structure, and can increase the transparency of the photovoltaic cell and increase the photoelectric conversion efficiency.

Another purpose of this creation is to combine a plurality of etching grooves on the photovoltaic cell structure, wherein the etching grooves are used to block the photovoltaic unit, and the etching grooves are filled with a plurality of insulating layers. In addition, one of the etching grooves is used as a through hole to fill and lay the same material as the hole transfer layer to connect the hole transfer layer and the lower conductive layer in series to form a photovoltaic cell structure. In this creative structure, the conventional production of metal as the conductive layer can be omitted, which can increase the light-receiving area of the photovoltaic material coating, and use the etching groove gap and combine The filling design of the insulating layer increases the operating margin of the photovoltaic cell, improves the yield rate and the utilization of the effective area of photoelectric conversion.

To achieve the above purpose, this creation provides a photovoltaic cell structure, including: a transparent conductive substrate, an electron transport layer, an active layer, a plurality of first etching grooves, a plurality of second etching grooves, and a plurality of first etching grooves. Three etching grooves, a plurality of insulating layers, a hole transfer layer and a plurality of serially connected conductive layers. The transparent conductive substrate includes a transparent substrate and a lower conductive layer, and the lower conductive layer is disposed on one side surface of the transparent substrate. The electron transfer layer is arranged on one side of the lower conductive layer. The active layer is arranged on one side of the electron transfer layer. The first etching grooves penetrate the active layer, the electron transport layer and the lower conductive layer to form a plurality of photovoltaic units. The second etching grooves penetrate the active layer and the electron transport layer. The third etching grooves penetrate the active layer and the electron transport layer longitudinally and laterally. A plurality of insulating layers are arranged inside the first etching grooves and the third etching grooves. The hole transfer layer is respectively arranged on a specific area on the surface of the active layer that has been etched into several small units. The series connection conductive layers are arranged inside the second etching grooves to electrically connect the hole transfer layer and the lower conductive layer.

In an embodiment of the present invention, the electron transport layer is polyethyleneimine.

In an embodiment of the present invention, the structural layer thickness of the electron transport layer is 0.5 nm-10 nm.

In an embodiment of this creation, the active layer is solvent-diluted P3HT/PCBM, PCPDTBT/PCBM, where P3HT/PCBM is a polymer semiconductor with plural 3-hexylthiophene (p-type materials) and plural phenyl- C61 methyl butyrate (n-type material) is mixed.

In an embodiment of the present creation, the structural layer thickness of the active layer is 100 nm-500 nm.

In an embodiment of the present creation, the hole transport layer and the series-connected conductive layer are solvent-diluted poly(3,4-ethylenedioxythiophene)/poly(p-styrenesulfonic acid) as main components, including The polymer of plural 3,4-ethylenedioxythiophene monomers and the plural sodium polystyrene sulfonate are mixed.

In an embodiment of this creation, the structural layer thickness of the hole transport layer is 100 nm-1um.

In an embodiment of this creation, the impedance of the hole transport layer is 1-100Ω/□.

In an embodiment of the present invention, the hole transfer layer further includes a reflective layer on the surface.

In an embodiment of this creation, the second etching grooves are 10um-500um.

In an embodiment of the present invention, the width of the first etching grooves and the third etching grooves is 10um-500um.

In an embodiment of the invention, the hole transfer layer and the lower conductive layer are each electrically connected to a lead made of silver paste and electrically connected to the outside. The lead can be made by printing as a wiring area. .

In an embodiment of the invention, the transparent conductive substrate is a transparent conductive layer roll material.

In an embodiment of the present invention, a buffer layer is provided on one or both sides of the transparent substrate to increase the strength of the transparent substrate or the adhesion with the lower conductive layer.

In an embodiment of the invention, the buffer layer is acrylic, epoxy, silicon dioxide or a combination of the above two materials.

In an embodiment of the invention, the transparent substrate is a transparent plastic or a transparent glass substrate.

In an embodiment of the invention, the light-transmitting plastic is phenolic resin, polyamide, polyimide, polyurethane, polyethylene, polyethylene terephthalate, acrylic plastic, etc.

In an embodiment of the present creation, the thickness of the transparent substrate is 10um-500um.

In an embodiment of the present invention, the lower conductive layer is metal or metal oxide, or a multi-layer combination of metal oxide, metal and metal oxide.

In an embodiment of the present invention, the light transmittance of the lower conductive layer may be 70%-95%.

In an embodiment of the invention, the insulating layer may be UV glue, epoxy resin or blue glue.

In an embodiment of the invention, the water and gas barrier material layers attached to the top and bottom of the photovoltaic cell structure are encapsulated to form a photovoltaic cell element.

In an embodiment of the present invention, the water and gas barrier material layer includes an upper water and gas barrier layer, a lower water and gas barrier layer, and a water and gas barrier glue.

In an embodiment of the invention, the thickness of the water and gas barrier layer is 50um-500um.

10: Photovoltaic layer

1: Transparent conductive substrate

11: Transparent substrate

12: Lower conductive layer

2: electron transport layer

3: active layer

4: Hole transfer layer

5: Insulation layer

6: Series connection conductive layer

7: Water and gas barrier material layer

71: water and gas barrier

72: Water and gas barrier

73: Water and air barrier glue

20: The first etching slot

30: Second etching bath

40: Third etching slot

Figure 1a is a schematic diagram of the photovoltaic layer of the photovoltaic cell structure of this invention; Figure 1b is a schematic top view of Figure 1a; Figure 2a is a diagram of the first etching groove and the first etching groove in the electron transport layer, active layer and lower conductive layer of the photovoltaic layer in Figure 1a. Fig. 2b is a schematic top view of Fig. 2a; Fig. 3a is a schematic side view of the insulating layer made in the first and third etching grooves in Fig. 2a; Fig. 3b , Is a schematic top view of Figure 3a; Figure 4a is a schematic side view of Figure 3a where a hole transfer layer and a series-connected conductive layer are made on the active layer; Figure 4b is the schematic top view of Figure 4a; Figure 5 is the original creation Schematic diagram of another embodiment of photovoltaic cell structure.

For the technical content and detailed description of this creation, please refer to Figures 1a and 1b, which are the top view of the photovoltaic layer of the photovoltaic cell structure of this creation and Figure 1a. As shown in the figure: this invention creates a photovoltaic cell structure. The photovoltaic layer 10, including an electron transport layer 2, an active layer 3, is sequentially coated on a transparent conductive substrate (or a transparent conductive layer coil) 1 in sequence. on. Wherein, the electron transport layer 2 of the photovoltaic layer 10 is made of polyethyleneimine (PEI) as the main component after being coated with a slit, and the thickness of the structural layer is preferably 0.5nm-10nm; the active layer 3 of the photovoltaic layer 10 It can be solvent-diluted P3HT/PCBM, PCPDTBT/PCBM, where P3HT/PCBM is a complex poly3-hexyl Alkylthiophene (poly(3-hexylthiophene), P3HT (p-type material)) polymer semiconductor and plural phenyl-C61-butyric acid methylester (phenyl-C61-butyric acid methylester, PCBM (n-type material)) are mixed After being diluted with xylene and coated by slits, the thickness of the structure layer is preferably 100nm-500nm.

In addition, the transparent conductive substrate 1 includes a transparent substrate 11 and a lower conductive layer 12 provided on a side surface of the transparent substrate 11. A buffer layer (not shown in the figure) can be further provided on either side or both sides of the transparent substrate (or transparent roll material) 11 to increase the strength of the transparent substrate 11 or the adhesion with the lower conductive layer 12. The buffer layer is acrylic, epoxy, silicon dioxide or a combination of the above two materials. The transparent substrate 11 is a transparent plastic or a transparent glass substrate, wherein the transparent plastic is phenolic resin (Phenol Novolac, PN), polyamide (PA), polyimide (PI), polyurethane ( Polyurethanes (PU), polyethylene (Polyethylene, PE), polyethylene terephthalate (PET), acrylic plastics, etc. In this drawing, the thickness of the transparent substrate 11 is 10um-500um.

In addition, the lower conductive layer 12 can be made by coating, sputtering or evaporation. The lower conductive layer 12 is made of metal or metal oxide, or a multilayer combination of metal oxide, metal and metal oxide, and the The light transmittance of the lower conductive layer 12 may be 70%-95%. Moreover, in this drawing, the lower conductive layer 12 is electrically connected to the outside by using a lead (not shown in the figure) made of silver paste. The lead can be printed as a wiring area (not shown in the figure). Show) become.

Please refer to FIGS. 2a and 2b, which are side views of cutting the first, second, and third etching grooves in the electron transport layer, active layer, and lower conductive layer of the photovoltaic layer in FIG. 1a and the top view of FIG. 2a. As shown in the figure: this creation uses a specific laser energy to not damage the transparent substrate 11, and performs laser etching of a plurality of first etching grooves (lines) 20 to etch the active layer 3, the electron transport layer 2 and the bottom The conductive layer 12 is used to form each photovoltaic unit, and the width of the first etching grooves 20 is 10um-500um.

Then, in a way that a specific laser energy does not damage the lower conductive layer 12, laser etching of a plurality of second etching grooves (lines) 30 and a plurality of third etching grooves (lines) 40 is performed to etch the active layer 3 and the electron transfer layer 2, the through holes formed by the second etching grooves 30 provide a hole transfer layer (upper conductive layer) to be electrically connected with the lower conductive layer 12, the second etching grooves 30 and The width of the third etching groove 40 is 10um-500um. In this drawing, the second etching groove 30 is a through hole, and the third etching groove 40 is not only cut longitudinally but also cut laterally.

Please refer to FIGS. 3a and 3b, which are the side view of the insulating layer in the first etching groove and the third etching groove in FIG. 2a and the top view of FIG. 3a. As shown in the figure: the original creation is filled with an insulating layer 5 in each of the first etching grooves 20 and the third etching grooves 40. In this drawing, the insulating layers 5 are UV glue, epoxy resin or blue glue.

Please refer to FIGS. 4a and 4b, which are the side view of the hole transfer layer and the series-connected conductive layer in the active layer of FIG. 3a and the top view of FIG. 4a. As shown in the figure: this creation then uses printing or masking to make a hole transfer layer 4 on a specific area on the surface of the active layer 3 that has been etched into a plurality of small units, and the hole transfer layer 4 The material can be filled by the second etching groove 30 to form a series conductive layer 6 so that the hole transfer layer 4, the series conductive layer 6 and the lower conductive layer 12 are electrically connected to the next photovoltaic unit. In the diagram, the hole transport layer 4 may be poly(3,4-ethylenedioxythiophene)/poly(p-styrene sulfonic acid) (PEDOT/PSS) diluted with a solvent as the main component, including plural EDOT (3,4-ethylenedioxythiophene monomer) polymer and plural polystyrene sulfonate (sodium-p-styrenesulfonate, PSS) mixed, such as after diluting with alcohol or polar solvent (such as ethanol) , The thickness of the structure layer is preferably 100nm-1um, and the impedance is preferably 1-100Ω/□.

Furthermore, in the present invention, a part of the silver paste material can be printed on the hole transfer layer 6 as leads to facilitate the electrical connection with the flat wires.

Furthermore, a reflective layer (not shown in the figure) that has glossiness or provides light reflection and refraction effects on the surface of the hole transfer layer 6 of the present invention.

This completes the photovoltaic unit structure connected in series. The series-connected photovoltaic unit structure can be further cut and used according to the requirements of each product component. Based on this, this creation uses the hole transfer layer 4 to replace the traditionally conductive layer, which can reduce the complexity of the related manufacturing process for the conductive layer. In this way, the gap design of the etching groove can be reduced, and the utilization of the effective area of photoelectric conversion can be increased, and the photoelectric reaction area can also be increased without light shielding of the electrode wires.

Please refer to FIG. 5, which is a schematic diagram of another embodiment of the photovoltaic cell packaging structure of the present invention. As shown in the figure: the original creation is attached to the top and bottom of the photovoltaic cell packaging structure with a water and gas barrier material layer 7. The water and gas barrier material layer 7 includes an upper water and gas barrier layer 71 and a lower water and gas barrier layer 72 And a water and gas barrier glue 73. The upper water and gas barrier layers 71 and 72 are encapsulated with 50um-500um to form photovoltaic cell components. In this drawing, the water and gas barrier layers 71 and 72 are transparent plastic or glass substrates.

However, the above is only the preferred embodiment of this creation, and it is not intended to limit the scope of patent protection of this creation. Therefore, all equivalent changes made by using this creation specification or schematic content are included in the rights of this creation. Within the scope of protection, Chen Ming shall be combined.

10: Photovoltaic layer

1: Transparent conductive substrate

11: Transparent substrate

12: Lower conductive layer

2: electron transport layer

3: active layer

4: Hole transfer layer

5: Insulation layer

6: Series connection conductive layer

20: The first etching slot

30: Second etching bath

40: Third etching slot

Claims (24)

A photovoltaic cell structure includes: a transparent conductive substrate, including a transparent substrate and a lower conductive layer, the lower conductive layer is arranged on one side of the transparent substrate; an electron transport layer is arranged on one side of the lower conductive layer An active layer is provided on one side of the electron transport layer; a plurality of first etching grooves are used to penetrate the active layer, the electron transport layer and the lower conductive layer to form a plurality of photovoltaic units; A plurality of second etching grooves penetrate the active layer and the electron transport layer; a plurality of third etching grooves penetrate the active layer and the electron transport layer longitudinally and laterally; a plurality of insulating layers are provided in Inside the first etching grooves and the third etching grooves; a hole transfer layer is respectively provided on a specific area on the surface of the active layer where several small cells have been etched; a plurality of conductive layers are connected in series, Is arranged inside the second etching grooves to electrically connect the hole transfer layer and the lower conductive layer. The photovoltaic cell structure described in item 1 of the scope of patent application, wherein the electron transport layer is polyethyleneimine. A photovoltaic cell structure as described in item 1 of the scope of patent application, wherein the structure layer thickness of the electron transport layer is 0.5 nm-10 nm. A photovoltaic cell structure as described in item 1 of the scope of patent application, wherein the active layer is solvent-diluted P3HT/PCBM, PCPDTBT/PCBM, and P3HT/PCBM is a complex poly(3-hexylthiophene) (p-type material) ) A mixture of polymer semiconductors and plural phenyl-C61 butyrate (n-type materials). A photovoltaic cell structure as described in item 1 of the scope of patent application, wherein the structure layer thickness of the active layer is 100 nm-500 nm. A photovoltaic cell structure as described in item 1 of the scope of patent application, wherein the hole transport layer and the series-connected conductive layer are solvent-diluted poly(3,4-ethylenedioxythiophene)/poly(p-styrene) Sulfonic acid is the main component, a polymer containing a plurality of 3,4-ethylenedioxythiophene monomers and a plurality of sodium polystyrene sulfonate are mixed. The photovoltaic cell structure described in item 1 of the scope of patent application, wherein the structure layer thickness of the hole transport layer is 100 nm-1um. The photovoltaic cell structure described in item 1 of the scope of patent application, wherein the impedance of the hole transport layer is 1-100Ω/□. The photovoltaic cell structure described in item 1 of the scope of patent application, wherein the hole transfer layer further includes a light-reflecting layer on the surface. The photovoltaic cell structure described in item 1 of the scope of patent application, wherein the first etching grooves are 10um-500um. A photovoltaic cell structure as described in item 1 of the scope of patent application, wherein the width and distance of the second etching grooves and the third etching grooves are 10um-500um. A photovoltaic cell structure as described in item 1 of the scope of patent application, wherein the hole transfer layer and the lower conductive layer are each electrically connected to a lead made of silver paste and electrically connected to the outside, and the lead can be made by printing It is made up of a wiring area. The photovoltaic cell structure described in item 1 of the scope of patent application, wherein the transparent conductive substrate is a transparent conductive layer coil. A photovoltaic cell structure as described in item 1 of the scope of patent application, wherein a buffer layer is provided on one or both sides of the transparent substrate to increase the strength of the transparent substrate or the adhesion with the lower conductive layer. The photovoltaic cell structure described in item 14 of the scope of patent application, wherein the buffer layer is acrylic, epoxy, silicon dioxide or a combination of the above two materials. The photovoltaic cell structure described in item 1 of the scope of patent application, wherein the transparent substrate is a transparent plastic or a transparent glass substrate. A photovoltaic cell structure as described in item 16 of the scope of patent application, wherein the light-transmitting plastic is phenolic resin, polyamide, polyimide, polyurethane, polyethylene, polyethylene terephthalate, acrylic Force plastics, etc. A photovoltaic cell structure as described in item 1 of the scope of patent application, wherein the thickness of the transparent substrate is 10um-500um. The photovoltaic cell structure described in item 1 of the scope of patent application, wherein the lower conductive layer is a metal or a metal oxide, or a multilayer combination of a metal oxide, a metal, and a metal oxide. In the photovoltaic cell structure described in item 1 of the scope of patent application, the light transmittance of the lower conductive layer can be 70%-95%. The photovoltaic cell structure described in item 1 of the scope of patent application, wherein the insulating layer can be UV glue, epoxy resin or blue glue. A photovoltaic cell structure as described in item 1 of the scope of patent application, wherein the water and gas barrier material layers attached to the top and bottom of the photovoltaic cell structure are encapsulated to form photovoltaic cell components. A photovoltaic cell structure as described in item 22 of the scope of patent application, wherein the water and gas barrier material layer includes a water and gas barrier layer and a water and gas barrier layer. The photovoltaic cell structure described in item 22 of the scope of patent application, wherein the thickness of the water and gas barrier layer is 50um-500um.

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