CN212011029U

CN212011029U - Photovoltaic cell structure

Info

Publication number: CN212011029U
Application number: CN202020706153.9U
Authority: CN
Inventors: 张裕洋; 丁定国; 刘修铭; 黄松建; 陈耀宗
Original assignee: Nanobit Tech Co ltd
Current assignee: Nanobit Tech Co ltd
Priority date: 2020-04-23
Filing date: 2020-04-30
Publication date: 2020-11-24
Anticipated expiration: 2030-04-30
Also published as: TWM600002U

Abstract

A photovoltaic cell structure, comprising: the electron emission device comprises a transparent conductive substrate, an electron transfer layer, an active layer, a plurality of first etching grooves, a plurality of second etching grooves, a plurality of third etching grooves, a plurality of insulating layers, a hole transfer layer and a plurality of series-connected conductive layers. The etching grooves are used for blocking to form a photovoltaic unit, and a plurality of insulating layers are fully paved in the etching grooves. And filling the etching groove with the same material as the hole transfer layer, and connecting the hole transfer layer in series with the lower conductive layer to form the photovoltaic cell structure. The existing manufacturing of taking metal as a conductive layer is omitted, the light receiving area of the photovoltaic material coating can be increased, the gap of the etching groove is combined with the filling design of the insulating layer, the operation margin of the photovoltaic cell is increased, and the yield and the utilization of the photoelectric conversion effective area are improved.

Description

Photovoltaic cell structure

Technical Field

The utility model relates to a photovoltaic cell structure especially relates to a photovoltaic cell structure about electrode structure.

Background

The study of photovoltaic cells is one direction that is expected by the public in renewable energy. Although most of the commercial products today use silicon as its main material, the organic photovoltaic cells developed by using polymer materials are receiving attention from the industry and academia due to their characteristics of simple process, low cost, light weight, flexibility, etc.

Currently, when an organic photovoltaic cell is manufactured, Coating (Coating) is mostly used as a technical means for manufacturing a photovoltaic cell thin film, and the advantage of the Coating is that the thin film has better flatness and uniformity. Furthermore, the R2R process is a potential technique for large-area preparation of organic photovoltaic cells, and has been used in the industry, and the R2R process can be well matched with the operation thereof, so that the organic photovoltaic cells can be produced at a lower cost, and have the advantages of plasticity, light weight, impact resistance, and the like.

Recently, photovoltaic cells are manufactured into translucent structures which can be irradiated on two sides and have light transmission, so that the photovoltaic cells are applied to more products, such as windows of buildings, however, color limitation of materials in the structures and manufacturing of metal materials of upper and lower conductive layers as circuits for electrical connection affect light transmission of the photovoltaic cells and even affect photoelectric conversion efficiency of irradiation.

There are many structures for further discussing the photoelectric conversion device of the photovoltaic cell, wherein one of the photoelectric conversion devices is called a photovoltaic cell, such as an organic photovoltaic cell or a Perovskite photovoltaic cell, wherein the photovoltaic cell is formed by connecting a plurality of photovoltaic units in series and in parallel, and each of the photovoltaic units comprises an electron transfer layer, an active layer (in an OPV, the light absorbing layer is called a BHJ layer, and in a coating solar cell, the light absorbing layer is called a coating layer), and a hole transfer layer, and further, the electrode wires of the upper and lower layers are linearly connected to achieve the effects of photoelectric conversion and electron transfer.

Taking an organic photovoltaic cell as an example, the electron transport layer may be made of PEI as a main component, and the active layer may be P3HT/PCBM or PCPDTBT/PCBM diluted by a solvent, where P3HT/PCBM is formed by mixing a plurality of poly (3-hexylthiophene), P3HT (P-type material) polymer semiconductors and a plurality of phenyl-C61 methyl butyrate (phenyl-C61-butylic acid methyl, PCBM (n-type material)), and the hole transport layer may be made of PEDOT diluted by a solvent: PSS is the main component (PEDOT: PSS), and is formed by mixing a plurality of EDOT (3, 4-ethylenedioxythiophene monomer) polymers and a plurality of sodium-p-styrene sulfonate (PSS).

In addition to the functional requirement of hole transport, the Hole Transport Layer (HTL) described above has the advantage that the PEDOT: PSS also can have electric conductivity, consequently the utility model discloses utilize the hole transfer layer to have electrically conductive characteristic and propose a novel photovoltaic cell structural design, improve traditional photovoltaic cell structure and simplify technology and reduce the cost of manufacture, more can improve photoelectric conversion efficiency.

SUMMERY OF THE UTILITY MODEL

Therefore, the main objective of the present invention is to provide an improved photovoltaic cell structure, wherein the hole (cavity) transmission layer (HTL) is adopted to form the impedance of 100 Ω/□ (the common unit "ohm square" is represented as Ω □, or "ohm per square" is represented as Ω/□) with a material with high conductivity, the transmittance is more than 50%, the hole transmission layer has the conductive function at the same time, the fabrication of the conductive layer is omitted, the photovoltaic cell structure with simplified process and reduced fabrication cost is provided, the transmittance of the photovoltaic cell is increased, and the photoelectric conversion efficiency is increased.

Another objective of the present invention is to provide a photovoltaic cell structure with a plurality of etching grooves, wherein the etching grooves are used to separate the photovoltaic cells, and a plurality of insulating layers are filled in the etching grooves. In addition, an etching groove is used as a through hole to be filled and paved with the same material as the hole transfer layer so as to be connected with the hole transfer layer in series and electrically connected with the lower conducting layer, thereby forming the manufacture of the photovoltaic cell structure. The utility model discloses the structure saves the preparation that has now to use the metal as the conducting layer, can increase the photic area of photovoltaic material coating to with the etching groove clearance and combine the filling design of insulating layer, increase photovoltaic cell operation margin, promote yield and photoelectric conversion effective area's utilization.

To achieve the above object, the present invention provides a photovoltaic cell structure, which comprises:

a transparent conductive substrate including a transparent substrate and a lower conductive layer disposed on one side of the transparent substrate

An electronic transfer layer arranged on one side of the lower conductive layer

An active layer arranged on one side of the electronic transfer layer

Multiple first etching grooves penetrating the active layer, the electron transfer layer and the lower conductive layer to form multiple photovoltaic cells

Multiple second etching grooves penetrating the active layer and the electronic transfer layer

Multiple third etching grooves running longitudinally and transversely through the active layer and the electronic transfer layer

Multiple insulation layers arranged inside the first and third etching grooves

A hole transfer layer respectively disposed on specific areas of the surface of the active layer of the plurality of small cells etched

Multiple series-connected conductive layers arranged inside the second etching grooves for electrically connecting the hole transfer layer and the lower conductive layer.

The photovoltaic cell structure is characterized in that the thickness of the structural layer of the electron transfer layer is 0.5nm-10 nm.

In the above photovoltaic cell structure, the thickness of the active layer is 100nm to 500 nm.

In the photovoltaic cell structure, the thickness of the structural layer of the hole transport layer is 100nm-1 um.

The photovoltaic cell structure, wherein the resistance of the hole transport layer is 1-100 Ω/□.

In the above-mentioned photovoltaic cell structure, a reflective layer is further included on the surface of the hole transport layer.

In the above photovoltaic cell structure, the first etching grooves are 10um to 500 um.

In the above photovoltaic cell structure, the widths of the second etching grooves and the third etching grooves are 10um to 500 um.

In the above photovoltaic cell structure, the hole transport layer and the lower conductive layer are electrically connected to a lead made of silver paste and electrically connected to the outside, and the lead is printed to form a wiring region.

In the photovoltaic cell structure, the transparent conductive substrate is a transparent conductive layer coiled material.

In the above photovoltaic cell structure, one or both sides of the transparent substrate are provided with a buffer layer to increase the strength of the transparent substrate or the adhesion with the lower conductive layer.

In the above photovoltaic cell structure, the transparent substrate is a transparent plastic or transparent glass substrate.

The photovoltaic cell structure is characterized in that the thickness of the transparent substrate is 10-500 um.

In the photovoltaic cell structure, the light transmittance of the lower conductive layer is 70-95%.

In the above photovoltaic cell structure, the water-blocking and air-blocking material layers attached to the upper and lower sides of the photovoltaic cell structure are packaged to form a photovoltaic cell element.

In the above photovoltaic cell structure, the water/gas-barrier material layer includes a water/gas-barrier layer and a water/gas-barrier layer.

The photovoltaic cell structure is characterized in that the thickness of the water-blocking gas barrier layer is 50-500 um.

The present invention will be described in detail with reference to the accompanying drawings and specific embodiments, but the present invention is not limited thereto.

Drawings

Fig. 1a, a schematic view of a photovoltaic layer of a photovoltaic cell structure of the present invention;

FIG. 1b is the top view of FIG. 1a

FIG. 2a is a schematic side view showing the first, second and third etching grooves of the electron transfer layer, the active layer and the lower conductive layer of the photovoltaic layer in FIG. 1a

FIG. 2b is the top view of FIG. 2a

FIG. 3a is a schematic side view of the insulating layer formed inside the first etching chamber and the third etching chamber in FIG. 2a

FIG. 3b is the top view of FIG. 3a

FIG. 4a is a schematic side view showing the hole transfer layer and the series connection conductive layer on the active layer in FIG. 3a

FIG. 4b is the top view of FIG. 4a

Fig. 5 is a schematic view of another embodiment of the photovoltaic cell structure of the present invention.

Wherein the reference numerals

Photovoltaic layer 10

Transparent conductive substrate 1

Transparent substrate 11

Lower conductive layer 12

Electron transport layer 2

Active layer 3

Hole transport layer 4

Insulating layer 5

Series connection of conductive layers 6

Water-and gas-barrier material layer 7

Water-blocking gas barrier layer 71

Water and gas barrier layer 72

Water-blocking and gas-barrier adhesive 73

First etching bath 20

Second etching bath 30

Third etching bath 40

Detailed Description

The technical content and the detailed description of the present invention are described below with reference to the accompanying drawings:

referring to fig. 1a and 1b, a photovoltaic layer of a photovoltaic cell structure of the present invention and a top view of fig. 1a are schematically illustrated. As shown in the figure: the utility model relates to a photovoltaic cell structure, according to the preface earlier with photovoltaic layer 10, contain an electron transfer layer 2, an initiative layer 3, coat on a transparent conductive substrate (or transparent conducting layer coiled material) 1 according to the preface. The electron transport layer 2 of the photovoltaic layer 10 is slit-coated with Polyethyleneimine (PEI) as a main component, and the thickness of the structure layer is preferably 0.5nm to 10nm, and the active layer 3 of the photovoltaic layer 10 may be solvent-diluted P3HT/PCBM, PCPDTBT/PCBM, wherein P3HT/PCBM is formed by mixing a plurality of poly (3-hexylthiophene) s (P3 HT (P-type material)) polymer semiconductors and a plurality of phenyl-C61 methyl butyrate (phenyl-C61-butyl acid methyl ester, PCBM (n-type material)), and the thickness of the structure layer is preferably 100nm to 500nm after diluted with xylene and slit-coated.

In addition, the transparent conductive substrate 1 includes a transparent substrate 11 and a lower conductive layer 12 disposed on a side of the transparent substrate 11. A buffer layer (not shown) may be further disposed on either or both sides of the transparent substrate (or transparent roll) 11 to increase the strength of the transparent substrate 11 or the adhesion with the lower conductive layer 12. The buffer layer is made of acrylic, epoxy resin, silicon dioxide or the combination of the two materials. The transparent substrate 11 is a transparent plastic or a transparent glass substrate, wherein the transparent plastic is phenolic resin (PN), Polyamide (PA), Polyimide (PI), Polyurethane (PU), Polyethylene (PE), Polyethylene Terephthalate (PET), acrylic plastic, or the like. In this figure, the transparent substrate 11 has a thickness of 10um to 500 um.

The lower conductive layer 12 can be formed by coating, sputtering or evaporation, the lower conductive layer 12 is a metal or a metal oxide, or a multi-layer combination of a metal oxide, a metal and a metal oxide, and the light transmittance of the lower conductive layer 12 can be 70% to 95%. In the present figure, the lower conductive layer 12 is electrically connected to the outside by a lead wire (not shown) made of silver paste, and the lead wire can be printed to form a row of wiring regions (not shown).

Please refer to fig. 2a and 2b, which are a side view of fig. 1a and a top view of fig. 2a illustrating a first etch bath, a second etch bath and a third etch bath performed on an electron transport layer, an active layer and a lower conductive layer of a photovoltaic layer. As shown in the figure, the utility model discloses do not destroy transparent substrate 11 mode with a specific laser energy, carry out the laser etching of many first etching grooves (line) 20, etch this initiative layer 3, this electron transfer layer 2 and lower conducting layer 12 to form each this photovoltaic unit, these a little first etching grooves 20 wide distance is 10um-500 um.

Then, a specific laser energy is used to etch the second etching grooves (lines) 30 and the third etching grooves (lines) 40 without damaging the lower conductive layer 12, the active layer 3 and the electron transfer layer 2 are etched, the through holes formed by the second etching grooves 30 are used to provide the electrical connection between the hole transfer layer (upper conductive layer) and the lower conductive layer 12, and the width between the second etching grooves 30 and the third etching grooves 40 is 10um-500 um. In this figure, the second etching trenches 30 are through holes, and the third etching trenches 40 perform lateral cutting in addition to longitudinal cutting.

Please refer to fig. 3a and 3b, which are a side view of fig. 2a and a top view of fig. 3a illustrating an insulating layer inside the first etch bath and the third etch bath. As shown in the drawing, the first etching grooves 20 and the third etching grooves 40 are each filled with an insulating layer 5. In this figure, the insulating layers 5 are UV glue, epoxy resin or blue glue.

Please refer to fig. 4a and 4b, which are a side view of fig. 3a performing a hole transport layer and a serial conductive layer on an active layer and a top view of fig. 4 a. As shown in the figure, the present invention then uses a printing or masking method to fabricate a hole transmission layer 4 on the specific area of the surface of the active layer 3 etched into a plurality of small units, and the material of the hole transmission layer 4 can be filled into the second etching groove 30 to form a serial connection conductive layer 6, so that the hole transmission layer 4, the serial connection conductive layer 6 and the lower conductive layer 12 are electrically connected to the next photovoltaic unit. In the figure, the hole transporting layer 4 can be a mixture of poly (3, 4-ethylenedioxythiophene)/poly (styrene sulfonic acid) (PEDOT/PSS) as the main component, a polymer containing a plurality of EDOT (3, 4-ethylenedioxythiophene monomers) and a plurality of sodium polystyrene sulfonate (PSS), for example, after being diluted with alcohol or polar solvent (e.g. ethanol), the thickness of the structural layer is preferably 100nm-1um, and the resistance is preferably 1-100 Ω/□.

Further, lie in the utility model discloses can be in this 6 local silver thick liquid materials of printing of hole transfer layer for the lead wire to in order to laminate electric connection with the winding displacement.

Further, a light reflecting layer (not shown) having a gloss property or providing light reflection and refraction effects is provided on the surface of the hole transporting layer 6 of the present invention.

Thus, the series photovoltaic unit structure is completed. The series photovoltaic unit structure can be further cut for use according to the requirements of the product elements. Therefore, the utility model discloses replace the preparation of conducting layer in too tradition with hole transfer layer 4, can reduce the numerous and complicated of the relevant technology of conducting layer in the preparation. Therefore, the gap design of the etching groove can be reduced, the utilization of the photoelectric conversion effective area is increased, and the photoelectric reaction area is increased without light shielding of the electrode lead.

Please refer to fig. 5, which is a schematic diagram of another photovoltaic cell package structure according to an embodiment of the present invention. As shown in the figure, the utility model discloses an upper and lower attachement of this photocell package structure has the gas barrier material layer 7 that blocks water, and this gas barrier material layer 7 that blocks water includes one and blocks water gas barrier layer 71, blocks water gas barrier layer 72 and one and blocks water gas barrier and glue 73, should block water

gas barrier layer

71, 72 and have 50um-500um to encapsulate to constitute the photovoltaic cell component. In this figure, the water-and gas-

barrier layers

71 and 72 are transparent plastic or glass substrates.

Naturally, the present invention can be embodied in many other forms without departing from the spirit or essential attributes thereof, and it should be understood that various changes and modifications can be made by one skilled in the art without departing from the spirit or essential attributes thereof, and it is intended that all such changes and modifications be considered as within the scope of the appended claims.

Claims

1. A photovoltaic cell structure, comprising:

An electronic transfer layer arranged on one side of the lower conductive layer

An active layer arranged on one side of the electronic transfer layer

Multiple insulation layers arranged inside the first and third etching grooves

2. The photovoltaic cell structure of claim 1, wherein the electron transport layer has a structural layer thickness of 0.5nm to 10 nm.

3. The photovoltaic cell structure of claim 1, wherein the active layer has a structure layer thickness of 100nm to 500 nm.

4. The photovoltaic cell structure of claim 1, wherein the thickness of the structural layer of the hole transport layer is between 100nm and 1 um.

5. The photovoltaic cell structure of claim 1, wherein the resistance of the hole transport layer is 1-100 Ω/□.

6. The photovoltaic cell structure of claim 1, wherein the surface of the hole transport layer further comprises a light reflecting layer.

7. The photovoltaic cell structure of claim 1, wherein the first etching trenches are 10um to 500 um.

8. The photovoltaic cell structure of claim 1, wherein the width of the second etching grooves and the width of the third etching grooves are 10um to 500 um.

9. The structure of claim 1, wherein the hole transport layer and the bottom conductive layer are electrically connected to a lead made of silver paste and an external electrical connection, and the lead is printed to form a wiring region.

10. The photovoltaic cell structure of claim 1, wherein the transparent conductive substrate is a roll of transparent conductive layer.

11. The photovoltaic cell structure of claim 1, wherein a buffer layer is disposed on one or both sides of the transparent substrate to increase the strength of the transparent substrate or the adhesion with the lower conductive layer.

12. The photovoltaic cell structure of claim 1, wherein the transparent substrate is a light-transmissive plastic or glass substrate.

13. The photovoltaic cell structure of claim 1, wherein the transparent substrate has a thickness of 10um to 500 um.

14. The photovoltaic cell structure of claim 1, wherein the lower conductive layer has a light transmittance of 70% to 95%.

15. The photovoltaic cell structure of claim 1, wherein the photovoltaic cell structure is packaged by attaching water-blocking and gas-blocking material layers on top and bottom of the photovoltaic cell structure to form a photovoltaic cell device.

16. The photovoltaic cell structure of claim 15, wherein the water-blocking gas barrier material layer comprises a water-blocking gas barrier layer, a water-blocking gas barrier layer.

17. The photovoltaic cell structure of claim 15, wherein the water-blocking gas barrier layer has a thickness of 50um to 500 um.