TWM595875U - Thin film resistor element - Google Patents

Abstract

A thin film resistor element, wherein a long strip-shaped resistor layer is disposed on a substrate, and two electrode layers separately disposed on the resistor layer, each of the two electrode layers has an extension part extending in a staggered or opposite manner, and the two extension parts may averagely separate the resistor layer into three sub-resistor layers with same resistance. Therefore, the present creation has lower resistance and higher power characteristics at same size of thin film resistor element.

Description

Thin film resistance element

This creation is about a thin film resistor element, especially a thin film resistor element with high power and low resistance.

Generally, when adjusting the resistance value of a thin-film resistor element, the area, length, or material of the resistive layer is used for adjustment, or the overall size of the thin-film resistor element is reduced.

In order to cope with the current trend of shrinking the volume of electronic components, reducing the size will increase the resistance and generate thermal effects, resulting in greater restrictions on the power of the components. At the same time, the demand for sophisticated electronic components requires low-resistance, high-power components, and relatively large-sized components.

In response to the demand for low-resistance, high-power precision thin-film resistor elements, this author proposes solutions for small-sized high-power resistor elements.

In order to achieve the above purpose, the present invention provides a thin film resistance element, so that the thin film resistance element can reduce the resistance value and increase the resistance allowable power under the same size.

A thin-film resistance element includes a substrate, a resistance layer and a two-electrode layer. The resistance layer is disposed on the substrate, the two electrode layers are separately connected to the two ends of the resistance layer, and the electrode layer and the resistance layer are connected, wherein each of the two electrode layers has an extension portion that can be divided into a plurality of sub-resistance layers, usually a plurality The resistance values of the sub-resistance layers may all be the same, different or partly the same. The design of the thin-film resistance element of this creation can have a lower resistance value and high power characteristics under the same resistance element size.

The following is a detailed description with specific examples and accompanying drawings, so that it is easier to understand the purpose, technical content, characteristics and effects of the creation.

In the following, each embodiment of the creation will be described in detail, and the drawings will be used as examples. In addition to these detailed descriptions, this creation can also be widely implemented in other embodiments. The easy replacement, modification, and equivalent changes of any of the described embodiments are included in the scope of this creation, and the scope of patent application is quasi. In the description of the specification, in order to allow the reader to have a more complete understanding of this creation, many specific details are provided; however, this creation may still be implemented on the premise that some or all of the specific details are omitted. In addition, well-known steps or elements are not described in detail to avoid unnecessary restrictions on the creation. The same or similar elements in the drawings will be represented by the same or similar symbols. It is important to note that the drawings are for illustrative purposes only, and do not represent the actual size or number of components. Some details may not be fully drawn for simplicity.

This creation is to set the connection point between the resistance layer and the electrode layer on the middle of the resistance layer of the small-sized thin film resistance element, and use these connection points to form a parallel resistance structure of the resistance layer, which can reduce the resistance value, so that this creation can provide a thin film resistance with lower resistance element. The resistance value can be adjusted through the position of the connection point.

In the following embodiments, two connection points are provided in the middle of the resistance layer, so that the resistance layer can form a three-parallel resistance structure, as described in detail below. However, it can be understood that setting more connection points can form more parallel resistance structures.

Please refer to FIG. 1, which is a top view of a thin film resistor element according to an embodiment of the present invention. In this embodiment, a thin film resistance element 1 includes a substrate 10, a resistance layer 11 and two electrode layers 12.

The resistance layer 11 is provided in a strip shape on the substrate 10 with a rectangular outline, and the resistance layer 11 can be provided on the surface of the substrate 10 by bonding, sputtering, electroplating, or vapor deposition.

The two electrode layers 12 are respectively connected to opposite ends of the resistance layer 11 so that the electrode layer 12 and the resistance layer 11 are electrically connected. The electrode layer 12 may substantially cover, partially overlap, or not overlap the two ends of the resistance layer 11 to achieve the function of connection and conduction. The two electrode layers 12 each have an extension 13 extending in a staggered or opposite manner, and the resistance layer 11 is divided into three sub-resistance layers 111, 112, 113, and the resistance values are expressed as R ₁ , R ₂ , R ₃ , forming a parallel structure.

Next, referring to FIG. 2 and FIG. 3, it is a circuit diagram and an equivalent circuit diagram of the thin-film resistance element created for this. The reciprocal of the equivalent resistance value R _{eq is} the reciprocal sum of the three sub-resistance values (1/ R _eq = 1/R ₁ + 1/R ₂ + 1/R ₃ ). For example, in this embodiment, A and A'are connected, and B and B'are connected, when the resistance values of the three sub-resistance layers 111, 112, 113 are the same, that is, R ₁ = R ₂ = R ₃ = R/ 3. Without considering the internal resistance of the wire, the equivalent resistance value R _eq should be one-third of the original resistance value R, that is, R _eq = R ₁ /3 = R/9. Understandably, the ratio of the resistance layer area of different sections is proportional to the resistance value of the section. Therefore, the resistance value of the section can be adjusted by adjusting the area ratio of the resistance layer of different sections, and different equivalent resistances can be obtained. The resistance values R ₁ , R ₂ , R _{3 of} the three sub-resistance layers 111, 112, 113 may be different or both of them are the same, which is adjusted depending on the actually required resistance value. Compared with the resistance value of a resistor element of the same size in the past, the resistance value of the thin-film resistance element of this invention is one-ninth of the original resistance value, which greatly reduces the resistance value and can meet the needs of precision resistance elements.

For example, in one embodiment, each extension 13 of the two electrode layers 12 has n connection points with the resistance layer 11, the resistance layer 11 is divided into 2n+1 sub-resistance layers of equal length to form a parallel circuit, each The resistance value of a sub-resistance layer is the original resistance value R/(2n+1), so the equivalent resistance value R _eq = R/(2n+1) ² . As in the previous embodiment, the electrode layer 12 each has an extension 13 and the resistance layer 11 has a connection point (n=1), the resistance layer 11 is divided into three sub-resistance layers (3=2*1+1), and the circuits are connected in parallel The equivalent resistance value R _eq is one-ninth of the original resistance value R.

In the above embodiments, the substrate 10 may be a precision ceramic substrate such as aluminum oxide, aluminum nitride, or other metal oxide materials. The substrate has good heat dissipation properties, but may also be other types of substrates. The substrate 10 is generally rectangular.

The above-mentioned embodiments are only to illustrate the technical ideas and characteristics of this creation, and its purpose is to enable those who are familiar with this skill to understand and implement the content of this creation, but should not limit the patent scope of this creation, That is to say, the equal changes or modifications made by Dafan in accordance with the spirit of this creation should still be covered by the patent scope of this creation.

1: Thin film resistive element 10: Substrate 11: Resistance layer 111-113: Sub-resistance layer 12: Electrode layer 13: Extension R ₁ , R ₂ , R ₃ : Sub-resistance value R: Original resistance value R _eq : Equivalent resistance Values A, A', B, B': contact

Figure 1 is a top view of the thin-film resistance element created for this.

Figure 2 is a circuit diagram of the thin-film resistance element created for this.

Fig. 3 is the equivalent circuit diagram of the thin-film resistance element created by the author.

1: Thin film resistance element

10: substrate

11: Resistance layer

111-113: Sub-resistance layer

12: electrode layer

13: Extension

Claims (4)

A thin-film resistance element, including: A substrate A resistance layer is provided on the substrate; The two electrode layers are respectively connected to the two ends of the resistance layer and communicate with the resistance layer, wherein each of the two electrode layers has an extension part staggered and connected to the middle of the resistance layer, and the resistance layer is divided into a plurality of sub-resistance layers , So that the plurality of sub-resistance layers form a parallel resistance. The thin-film resistance element as described in item 1 of the patent application range, wherein the extensions of the two-electrode layer each have a connection point with the resistance layer, and the resistance layer is divided into three sub-resistance layers. As in the thin-film resistance element described in item 2 of the patent application range, the resistance values of the three sub-resistance layers are the same or different. As in the thin-film resistance element described in item 1 of the patent application range, the resistance values of the plurality of sub-resistance layers are all the same, completely different, or partly the same.

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