TWM578013U - Ion implanter - Google Patents

Abstract

The present invention provides an ion implantation apparatus comprising an ion generating module, the ion generating module comprising: an ion generating cavity comprising a top plate, a bottom plate, a first side plate, a second side plate, a third side plate and a fourth side plate and Forming an accommodating space, the top plate has an ion outlet, the bottom plate has a gas inlet, the first side plate and the second side plate are oppositely disposed between the top plate and the bottom plate, and the third side plate and the fourth side plate are also oppositely disposed on the top plate and Between the bottom plates, and the accommodating space, the ion outlet is in communication with the gas inlet; the anode disposed on the first side plate, and the cathode passing through and disposed on the second side plate; and a filament comprising two fixing portions and connecting the two fixing portions The heating portion of the portion, and the orthogonal projection of the heating portion on the bottom surface overlaps with the geometric center point of the bottom surface.

Description

Ion implantation device

The present invention relates to an ion implantation apparatus, and more particularly to an ion implantation apparatus having an ion generation module.

Nowadays, as the technology of integrated circuits has matured, almost all electronic products on the market will be equipped with integrated circuits. Further, the integrated circuit is fabricated by processing a wafer. Ion implantation is the most important dopant pre-deposition technique in wafer processing, which ionizes and introduces impurities into the wafer to change the material properties of the wafer ( For example: conductivity). Therefore, the ion implantation apparatus for performing ion implantation often directly affects the cost and yield of the wafer process.

However, the ion generating module of the ion implanter currently on the market, for the filament, because the heating portion is not disposed in the center of the cathode, the position where the cathode is heated by the filament is offset from the center, so that the cathode cannot be replaced by the filament. Uniform heating affects the efficiency of ion generation. Therefore, there is still a need for an ion implantation apparatus to improve the above problems.

The present invention provides an ion implantation apparatus that enables a cathode to be uniformly heated by a filament, thereby enhancing the generation efficiency of ions in the ion generation chamber.

The present invention provides an ion implantation apparatus comprising an ion generating module, the ion generating module comprising: an ion generating cavity, comprising a top plate, a bottom plate, a first side plate, a second side plate, a third side plate and a fourth side plate, and a top plate The bottom plate has a gas inlet, the first side plate and the second side plate are disposed opposite to each other between the top plate and the bottom plate, and the third side plate and the fourth side plate are also disposed opposite to each other between the top plate and the bottom plate, and the top plate The bottom plate, the first side plate, the second side plate, the third side plate and the fourth side plate together form an accommodating space, the accommodating space, the ion outlet is in communication with the gas inlet; an anode is disposed on the first side plate; Passing through and disposed on the second side plate, the cathode having a recessed portion, wherein the recessed portion is located at a surface of the cathode away from the anode; and a filament comprising two fixing portions and a heating portion connecting the two fixing portions, wherein the heating portion is located In the recessed portion, the two fixing portions extend from the recessed portion to the outside of the recessed portion, and the orthogonal projection of the heating portion on the bottom surface overlaps with the geometric center point of the bottom surface.

The present invention provides an ion implantation apparatus, and the present invention provides an ion implantation apparatus in which the position of the filament heating portion is changed to the center. Therefore, the position where the cathode is heated by the filament can be located in the intermediate portion to achieve a uniform heating effect, thereby effectively increasing the efficiency of ion generation.

The above description of the disclosure and the following description of the embodiments are intended to illustrate and explain the spirit and principles of the present invention, and to provide further explanation of the scope of the patent application of the present invention.

The detailed features and advantages of the present invention are described in detail in the following detailed description of the embodiments of the present invention. Any related art and related art can easily understand the related purposes and advantages of the present invention. The following examples are intended to describe the present invention in further detail, but do not limit the scope of the present invention in any way.

An embodiment of the present invention discloses an ion implantation apparatus, and the ion implantation apparatus includes an ion generation module 100. The top of the ion generation module 100 can be combined with an ion extraction module (not shown) and a secondary extraction module ( Not shown). For details of the components of the ion generating module 100, please refer to FIG. 1A and FIG. 1B. FIG. 1A is an exploded perspective view of the ion generating module 100 of the ion implantation apparatus according to an embodiment of the present invention, and FIG. 1B is a schematic diagram of the present invention. A schematic perspective view of an ion generating module 100 of an ion implantation apparatus of an embodiment. As shown in FIG. 1A and FIG. 1B, the ion generating module 100 includes an ion generating cavity 110, an anode 120 (or a reflecting pole), a cathode 130, a cathode holder 140, a filament 150, a filament holder 160, and insulators 170 and 171. The base 180 and the chassis 190.

To illustrate the structure of the ion generating cavity 110, please continue to refer to FIG. 1A. The ion generating cavity 110 includes a top plate 111, a bottom plate 118, a first side plate 113, a second side plate 114, a third side plate 115, a fourth side plate 116, and a gas splitter disk 117. The first side plate 113 and the second side plate 114 are disposed opposite to each other between the top plate 111 and the bottom plate 118, and the third side plate 115 and the fourth side plate 116 are also disposed opposite to each other between the top plate 111 and the bottom plate 118. The gas distribution plate 117 is disposed. It is then disposed on the bottom plate 118. In addition, the top plate 111 has an ion outlet 112, and the bottom plate 118 has a gas inlet 118a, and the top plate 111, the bottom plate 118, the first side plate 113, the second side plate 114, the third side plate 115 and the fourth side plate 116 together form an accommodation space S. And the ion outlet 112, the gas inlet 118a and the accommodating space S are in communication with each other, so that the reaction gas can enter the accommodating space S from the gas inlet 118a of the bottom plate 118, and interact with the electrons in the accommodating space S. After the ions are formed, they are again overflowed by the ion outlet 112 of the top plate 111. The above reaction gas may be a gas containing a group IIIA or IVA atom such as boron (B), phosphorus (P) or arsenic (As), but the present invention is not limited thereto.

Please continue to refer to Figure 1A. In the present embodiment, the ion generating cavity 110 further includes a first lining 113a, a second lining 114a, a third lining 115a and a fourth lining 116a located in the accommodating space S. The first lining plate 113a is detachably disposed at one side of the first side plate 113, and the anode 120 is passed through the first lining plate 113a and the first side plate 113 to be disposed in the accommodating space S, and the first lining plate 113a Electrically isolated. The second lining plate 114a is detachably disposed on one side of the second side plate 114, and the cathode 130 is passed through the first lining plate 113a and the first side plate 113 to be partially disposed in the accommodating space S, and the second lining The board 114a is electrically isolated. Similarly, the third lining plate 115a is detachably disposed at one side of the third side plate 115, and the fourth lining plate 116a is detachably disposed at one side of the fourth side plate 116.

The above-mentioned detachably replaceable first liner 113a, second liner 114a, third liner 115a and fourth liner 116a are in direct contact with ions and reactive gases to deposit deposit thereon. When the deposit is accumulated to a certain amount, only a new liner needs to be replaced without replacing the entire ion generating chamber 110. In this way, the problem that the first side plate 113, the second side plate 114, the third side plate 115, and the fourth side plate 116 are in direct contact with the reaction gas and is deposited by a large amount of deposits can be reduced. Moreover, in practice, the thickness of each of the lining plates may be designed to be thinner than the first side plate 113, the second side plate 114, the third side plate 115, and the fourth side plate 116 to reduce the manufacturing cost thereof. In addition, the first lining plate 113a and the second lining plate 114a have a grain structure. The texture structure can increase the surface area of the first lining plate 113a and the second lining plate 114a, so that the deposit is more likely to adhere to the first lining plate 113a and the second lining plate 114a, so as to prevent a large amount of deposits from adhering to the top plate 111. The ion outlet 112 is blocked. In the present embodiment, the first lining plate 113a, the second lining plate 114a, the third lining plate 115a and the fourth lining plate 116a are disposed in the accommodating space S, but are not limited thereto. In other embodiments of the present invention, the first lining 113a, the second lining 114a, the third lining 115a, and the fourth lining 116a in the accommodating space S may be omitted.

As described above, since a large amount of reaction gas and ions are present in the accommodation space S, most of the reaction gas and ions may overflow from the ion outlet 112 of the top plate 111. Therefore, the number of replacements of the top plate 111 is more frequent than the aforementioned side plates and lining plates. In order to reduce the cost of replacing the top plate 111, in the embodiment, the top plate 111 is composed of three detachable plates, and the other embodiments are not limited thereto. As shown in FIG. 1A, the top plate 111 includes a first plate body 111a, a second plate body 111b, and a third plate body 111c. The first plate body 111a has a first opening 112a, the second plate body 111b has a second opening 112b, and the third plate body 111c has a third opening 112c. Specifically, the second plate body 111b is detachably disposed on the first opening 112a, and the third plate body 111c is detachably disposed on the first plate body 111a and covers the second plate body 111b, and the second opening 112b is The third opening 112c is opposite to form an ion outlet 112, and the ion outlet 112 is separable. In detail, the ion and reaction gas system mainly overflows from the second opening 112b of the second plate body 111b, so that the second plate body 111b directly contacts a large amount of ions and the reaction gas and generates deposits, so that the second plate body 111b The service life is the shortest of the three plates. On the contrary, the third plate body 111c can be insulated from the reaction gas by the first plate body 111a and the second plate body 111b, and the ions in the accommodating space S, so that the service life of the third plate body 111c is three plates. The longest of them. On the other hand, the first plate body 111a also directly contacts part of the ions and the reaction gas, so the service life of the first plate body 111a is longer than that of the second plate body 111b, but shorter than the third plate body 111c.

In an embodiment of the present invention, the ion generating cavity 110 further includes a gas splitter disk 117, but the other embodiments are not limited thereto. To illustrate the gas splitter disk 117, please refer to FIG. 2A and refer to FIG. 1A together. 2A is a top plan view of a gas splitter disk 117 of an ion implantation apparatus in accordance with an embodiment of the present invention. As shown in Fig. 2A, the peripheral edge 117d of the gas splitter disk 117 is maintained at a distance d1, that is, the through-holes 117c are maintained in a complete shape and are not tangent to the peripheral edge 117d. The gas splitter disk 117 has a central zone 117a opposite to the gas inlet 118a of the bottom plate 118 (as shown in Fig. 1A), an outer ring zone 117b surrounding the central zone 117a, and a through hole 117c. In the outer ring zone 117b. In general, the shape of the through hole 117c may be a circular shape, but may be designed into other shapes or the number thereof according to different requirements, and the embodiment is not limited thereto.

Next, the bottom plate 118 and the internal structure of the ion generating cavity 110 will be explained. Please refer to FIG. 2B and refer to FIG. 1A and FIG. 2A together. 2B is a partial enlarged cross-sectional view of the ion generating module 100 of the ion implantation apparatus according to an embodiment of the present invention. In order to clearly illustrate the arrangement between the ion generating chamber 110, the gas splitter disk 117 and the bottom plate 118, in Fig. 2B, only the portion marked with a diagonal line is a cross section, and the elements indicated by broken lines are a perspective view. As shown in FIG. 2B, in the embodiment, the ion generating cavity 110 further includes a rib 119, but the other embodiments are not limited thereto. The rib 119 is located in the accommodating space S and is disposed on the bottom plate 118 and surrounds the periphery of the bottom plate 118. The gas shunt disk 117 described above is disposed on the rib 119, and partitions the accommodating space S into the gas buffer space S1 and the ion generating space S2. The gas buffer space S1 is located between the gas splitter disk 117 and the bottom plate 118. In detail, when the reaction gas system enters the gas buffer space S1 from the gas inlet 118a of the bottom plate 118, since the central portion 117a of the gas distribution disk 117 is not provided with the through hole 117c, the gas is uniformly outwardly directed in the gas buffer space S1. The region 117b is diffused and uniformly penetrates into the ion generating space S2 through the through hole 117c of the outer ring region 117b.

It is worth mentioning that the ion generating cavity 110 disclosed in the present invention has a right-angled structure R (shown in FIG. 2B) under the two sides of the cathode 130 and the anode 120. Below the right angle structure R, there is a spacer 110a, and an anode fixing member 110b is fixed to the spacer 110a. The shaft of the anode 120 penetrates the first liner 113a and the first side plate 113, and is fixed to the anode fixture 110b. The above design can reduce the distance between the anode 120 and the anode holder 110b, and avoid the anode 120 contacting the liner inside the ion generating chamber 110 to form a short circuit when the ion implantation apparatus operates to cause vibration. It should be noted that the spacer 171 (the material may be ceramic) is further included between the spacer 110a and the anode shaft fixing member 110b for electrically isolating the spacer 110a and the anode shaft fixing member 110b to prevent the anode 120 and the ion generation. The cavity 110 is equipotential and forms a short circuit.

To illustrate the arrangement of the anode 120 and the cathode 130, please continue to refer to FIG. 2B and refer to FIG. 1A together. As shown in FIG. 2B and FIG. 1A, the anode 120 and the cathode 130 are disposed on both sides of the ion generating cavity 110, and a large amount of ions are generated in the ion generating cavity 110 by the potential difference between the two. . The anode 120 is passed through and disposed in the first side plate 113 and located in the ion generating cavity 110 and electrically isolated from the first side plate 113. The cathode 130 passes through and is disposed on the second side plate 114 and is partially exposed to the ion generating cavity 110 and electrically isolated from the second side plate 114. In detail, a portion of the cathode 130 outside the accommodating space S is detachably fixed to the cathode holder 140, and the cathode holder 140 is not in contact with the second side plate 114 to maintain electrical insulation. In addition, to illustrate the cathode holder 140, please refer to FIG. 1A and FIG. 1B. The cathode holder 140 may be made of graphite and may be subdivided into a holder body 141, a locking portion 142, and a holder 143. As shown in FIG. 1A, the bracket body 141 is for supporting the cathode 130, the locking portion 142 is for locking the cathode 130, and the clamping member 143 is for fixing the cathode bracket 140 to one side of the base 180.

As can be seen from FIG. 1A, the cathode 130 has a recess 131, and the recess 131 is located on the surface of the cathode 130 away from the anode 120. The filament 150 is disposed inside the recess 131 described above. On the other hand, the filament 150 includes two fixing portions 151 and a heating portion 152, and the heating portion 152 is connected to the two fixing portions 151. In order to clearly explain the arrangement relationship between the cathode 130 and the filament 150, the structure of the filament 150 will be described first in the continuation section, and the detailed structure of the cathode 130 will be described together by explaining the arrangement relationship between the cathode 130 and the filament 150.

To explain the construction of the filament 150, please refer to FIG. 3A and refer to FIG. 1A together. 3A is a top plan view of a cathode 130 and a filament 150 of an ion implantation apparatus in accordance with an embodiment of the present invention. As previously mentioned, the filament 150 is disposed inside the recess 131 of the cathode 130 and above the bottom surface 132 of the cathode 130, and has a beveled structure 134 at the periphery of the bottom surface 132. As shown in FIG. 1A, the filament 150 has a fixing portion 151 for holding the filament holder 160 and a heating portion 152 for heating the bottom surface 132 of the cathode 130. The orthogonal projection of the heating portion 152 on the bottom surface 132 overlaps the geometric center O of the bottom surface 132 such that the heating portion 152 can be positioned in the center of the entire filament structure to heat the region near the geometric center O of the bottom surface 132. In an embodiment of the present invention, the filament 150' includes a first curved portion 153 and a second curved portion 154 that are different in a centripetal direction, and the first curved portion 153 and the second curved portion 154 are further included. The curved portion 155 and the second secondary curved portion 156 are required for the first time. The opposite ends of the heating portion 152 are respectively connected to the first curved portion 153 and the second curved portion 154 through the first secondary curved portion 155 and the second secondary curved portion 156 to form a wraparound labyrinth. It should be noted that the remaining embodiments of the present invention are not limited to the above features.

To illustrate the construction of the filament 150, please refer to FIG. 3B. Figure 3B is a top plan view of the cathode 130 and filament 150' of the ion implantation apparatus in accordance with another embodiment of the present invention. The orthogonal projection of the heating portion 152' of the filament 150' shown in FIG. 3B also overlaps the geometric center O of the bottom surface 132, and the filament 150' also includes a first curved portion 153' and a portion that are different in the centripetal direction. Two curved portions 154'. Different from FIG. 3A , in the embodiment, the opposite ends of the heating portion 152 ′ are respectively connected to the second fixing portion 151 ′ through the first curved portion 153 ′ and the second curved portion 154 ′, forming a similar S. The shape of the letter, but the rest of the embodiments are not limited thereto.

To elaborate the relationship between the cathode 130 and the filament 150', please refer to Figures 4A and 5B. 4A is a schematic view showing the arrangement of the cathode 130 and the filament 150' of the ion implantation apparatus according to an embodiment of the present invention, and FIG. 4B is a cross-sectional view showing the arrangement of the cathode 130 and the filament 150' of the ion implantation apparatus according to an embodiment of the present invention. As shown in Figs. 4A and 4B, the heating portion 152' of the filament 150' is disposed in the recess 131 of the cathode 130 and close to the bottom surface 132. The fixing portion 151' extends from the recess 131 to the outside of the recess 131, and is partially exposed to the recess 131 for the filament holder 160 to be clamped. The recess 131 further has a sidewall surface 133 and a slope 134, and the slope 134 connects the sidewall surface 133 and the bottom surface 132. Specifically, the bevel 134 can increase the thickness of the joint between the side wall surface 133 and the bottom surface 132 compared to the design of the right angle or the arc angle, and the speed at which the ground joint is broken due to ion impact increases the durability of the cathode 130. Briefly, the anode 120 and the cathode 130 are disposed on opposite sides of the ion generating chamber 110, and the filament 150 is disposed inside the cathode 130 to heat the cathode 130.

For a more detailed explanation, please continue to refer to Figure 4B. As shown in FIG. 4B, the angle θ between the slope 134 and the bottom surface 132 is about 40 degrees, and the thickness T between the slope 134 and the side wall surface 133 is between about 1.0 mm and 2.5 mm. On the other hand, the filament 150' has a planar configuration toward one end of the bottom surface 132 such that the filament 150' can uniformly heat the bottom surface 132 of the cathode 130. Fig. 4B is exemplified by the filament 150', but the filament 150 may have this planar structure. In general, the filament 150' can be about 0.06 mm from the bottom surface 132 and the filament 150 can be about 0.65 mm, but can also be applied to the bottom surface 132 as shown in Figure 4B. It should be noted that the data mentioned in this paragraph is only an example description, and the above data can be adjusted according to the actual needs. The present invention is not limited thereto.

To illustrate the filament clip 160, please refer to Figure 5 and refer to Figure 1A together. FIG. 5 is a partially enlarged schematic view of an ion generating module 100 of an ion implantation apparatus according to an embodiment of the present invention. As shown in FIG. 1A and FIG. 5, the filament holder 160 can be used to fix the filament 150 to the inside of the cathode 130, and is fixed to the base 180 through the insulator 170 and a fixing member (not shown). As shown in FIG. 5, the filament holder 160 includes a connecting portion 163, a first arm portion 161 and a second arm portion 162, wherein the connecting portion 163 connects the first arm portion 161 and the second arm portion 162. The first arm portion 161 is located between one end of the second arm portion 162 away from the connecting portion 163 and the connecting portion 163. The end of the second arm portion 162 bypasses the end of the first arm portion 161 to restrict the end of the first arm portion 161 from moving away from the second arm portion 162. A clamp slit 164 is formed between the first arm portion 161 and the second arm portion 162, and one of the two fixing portions 151 of the filament 150 is clamped in the clamp slit 164. The first arm portion 161 has a first fixing hole 165, the second arm portion 162 has a second fixing hole 166, and the second fixing hole 166 penetrates the second arm portion 162. In addition, the first fixing hole 165 is opposite to the second fixing hole 166 for locking.

Specifically, the jig slit 164 extends from the connecting portion 163 toward the top end of the second arm portion 162, and an opening 167 is formed on the same side as the first fixing hole 165. However, the opening 167 may also be located on the same side as the second fixing hole 166, and the present invention is not limited thereto. By the position design of the opening 167 described above, the end of the second arm portion 162 can stably fix the filament 150 in the clamp slit 164 by restricting the movement of the first arm portion 161, thereby effectively avoiding the filament clip after long-term use. 160 fell off due to its own weight pull. On the other hand, since the filament holder 160 has two fixing holes in opposite positions, the two fixing holes can be locked by screws or other parts, so that the filament holder 160 can hold the filament 150 more firmly.

In summary, the present invention provides an ion generating module of an ion implantation apparatus, which changes the position of the filament heating portion to the center. Therefore, the position where the cathode is heated by the filament can be located in the middle region, so that the ions can be uniformly distributed in the ion generating cavity, thereby effectively improving the efficiency of ion generation.

Although the present invention has been disclosed above in the foregoing embodiments, it is not intended to limit the present invention. The changes and refinements of the present invention are within the scope of the patent protection of the present invention without departing from the spirit and scope of the present invention. Please refer to the attached patent application for the scope of protection defined by this new model.

100‧‧‧Ion generating module  110‧‧‧Ion generating chamber  110a‧‧‧shims  110b‧‧‧Anode shaft mounts  111‧‧‧ top board  111a‧‧‧ first board  111b‧‧‧Second plate  111c‧‧‧ third plate  112‧‧‧Ion exit  112a‧‧‧first opening  112b‧‧‧ second opening  112c‧‧‧ third opening  113‧‧‧First side panel  114‧‧‧ second side panel  115‧‧‧ third side panel  116‧‧‧fourth side panel  S‧‧‧ accommodating space  S1‧‧‧ gas buffer space  S2‧‧‧ ion generation space  113a‧‧‧First liner  114a‧‧‧second liner  115a‧‧‧third liner  116a‧‧‧4th lining  117‧‧‧ gas distribution plate  117a‧‧‧Central District  117b‧‧‧Outer Ring Area  117c‧‧‧through holes  117d‧‧‧ Periphery  D1‧‧‧ distance  118‧‧‧floor  118a‧‧‧ gas inlet  119‧‧‧ ribs  120‧‧‧Anode  130‧‧‧ cathode  131‧‧‧ dent  132‧‧‧ bottom  133‧‧‧ wall  134‧‧‧Bevel  140‧‧‧Cathode stent  141‧‧‧ bracket body  142‧‧‧Locking Department  143‧‧‧Clamping parts  150‧‧‧ filament  151‧‧‧ Fixed Department  152‧‧‧ heating department  153‧‧‧First curved section  154‧‧‧Second curved part  155‧‧‧The first time to have a curved part  156‧‧‧second secondary curved section  150’‧‧‧ filament  151’‧‧‧ Fixed Department  152'‧‧‧ heating department  153’‧‧‧First curved section  154’‧‧‧Second curved section  160‧‧‧ filament clip  161‧‧‧First arm  162‧‧‧ second arm  163‧‧‧Connecting Department  164‧‧ ‧ fixture gap  165‧‧‧First fixing hole  166‧‧‧Second fixing hole  167‧‧‧ openings  170, 171‧‧‧ insulator  180‧‧‧Base  190‧‧‧Chassis  O‧‧·Geometry Center  Θ‧‧‧ angle  T‧‧‧ thickness  

1A is an exploded perspective view of an ion generating module of an ion implantation apparatus according to an embodiment of the present invention.  1B is a perspective view of an ion generating module of an ion implantation apparatus according to an embodiment of the present invention.  2A is a top plan view of a gas splitter disk of an ion implantation apparatus according to an embodiment of the present invention.  2B is a partial enlarged cross-sectional view of an ion generating module of an ion implantation apparatus according to an embodiment of the present invention.  3A is a top plan view of a cathode and a filament of an ion implantation apparatus in accordance with an embodiment of the present invention.  3B is a top plan view of a cathode and a filament of an ion implantation apparatus according to another embodiment of the present invention.  4A is a schematic view showing the arrangement of a cathode and a filament of an ion implantation apparatus according to an embodiment of the present invention.  4B is a cross-sectional view showing the arrangement of a cathode and a filament of an ion implantation apparatus according to an embodiment of the present invention.  FIG. 5 is a partially enlarged schematic view of an ion generating module of an ion implantation apparatus according to an embodiment of the present invention.  

Claims (11)

An ion implantation device includes an ion generating module, the ion generating module comprising: an ion generating cavity, comprising a top plate, a bottom plate, a first side plate, a second side plate, a third side plate and a fourth a side plate having an ion outlet, the bottom plate having a gas inlet, the first side plate being disposed opposite to the second side plate between the top plate and the bottom plate, and the third side plate and the fourth side plate are also opposite Between the top plate and the bottom plate, the top plate, the bottom plate, the first side plate, the second side plate, the third side plate and the fourth side plate together form an accommodating space, the accommodating space, The ion outlet is in communication with the gas inlet; an anode passing through and disposed on the first side plate; a cathode passing through and disposed on the second side plate, the cathode having a recess located at the cathode away from the anode a surface having a bottom surface; and a filament comprising two fixing portions and a heating portion connecting the two fixing portions, wherein the heating portion is located in the recess, and the two fixing portions are from the recess to the recess It extends, and the heated portion of the bottom surface of the orthogonal projection overlaps with the geometric center of the bottom surface. The ion implantation apparatus of claim 1, wherein the top plate comprises a first plate body, a second plate body and a third plate body, the first plate body having a first opening, the second plate body having a second opening, the third plate has a third opening, the second plate is detachably disposed on the first opening, and the third plate is detachably disposed on the first plate and covers the first opening a second plate body, and the second opening is opposite to the third opening to form the ion outlet. The ion implantation apparatus of claim 1, further comprising a filament clip, the filament clip comprising a connecting portion, a first arm portion and a second arm portion, the connecting portion connecting the first arm portion and the second portion An arm portion, the first arm portion is located between an end of the second arm portion away from the connecting portion and the connecting portion, and a clamp gap is formed between the first arm portion and the second arm portion, the two of the filaments One of the fixing portions is clamped in the gap of the jig. The ion implantation apparatus of claim 3, wherein the first arm has a first fixing hole, the second arm has a second fixing hole, and the second fixing hole penetrates the second arm, the first A fixing hole is opposite to the second fixing hole for locking. The ion implantation apparatus of claim 1, further comprising: a rib disposed on the bottom plate and located in the accommodating space; and a gas shunting disk disposed on the rib and partitioning the accommodating space into a a gas buffer space and an ion generating space, and the gas buffer space is located between the gas shunt disk and the bottom plate, the gas shunt disk has a plurality of through holes, and the through holes and the periphery of the gas shunt plate also maintain a distance. The ion implantation apparatus of claim 5, wherein the gas distribution disk has a central zone and an outer ring zone, the outer ring zone surrounding the central zone, and the through holes are located in the outer ring zone. The ion implantation apparatus of claim 1, further comprising a cathode holder, the portion of the cathode outside the accommodating space being detachably fixed to the cathode holder, and the cathode holder electrically insulated from the second side plate. The ion implantation apparatus of claim 1, wherein the filament further comprises a first curved portion and a second curved portion, the first curved portion and the second curved portion having a centripetal direction different from each other, The opposite ends of the heating portion are respectively connected to the two fixed portions through the first curved portion and the second curved portion. The ion implantation apparatus of claim 8, wherein the filament further comprises a first minor arc portion and a second minor arc portion, the first minor arc portion and the second minor arc portion The centripetal direction of the portion is different, and the opposite ends of the heating portion respectively connect the first arc portion and the second arc portion through the first minor arc portion and the second minor arc portion. The ion implantation apparatus of claim 1, further comprising a first lining, a second lining, a third lining and a fourth lining, the first lining, the second lining, the The third lining plate and the fourth lining plate are both located in the accommodating space, wherein the first lining plate is disposed on one side of the first side plate, and the anode passes through the first lining plate and the first side plate The second lining plate is disposed on one side of the second side plate, and the cathode is passed through the first lining plate and the first side plate; the third lining plate is disposed on one side of the third side plate, the first The four liners are disposed on one side of the fourth side panel. The ion implantation apparatus of claim 1, wherein the recess of the cathode further has a sidewall surface and a slope, the slope connecting the sidewall surface and the bottom surface, wherein a thickness between the slope and the sidewall surface is Between 1.0mm and 2.5mm.