TWM575921U - Package structure and illuminating device having the same - Google Patents

Abstract

The present invention provides a package structure and a light-emitting device including the same, the package structure comprising: a light-emitting component; a carrier, wherein the carrier has a recess, and the light-emitting component is disposed in the recess And electrically connecting the electrode portion on the carrier, and an encapsulation layer, the encapsulation layer is disposed in the recess and covering the light emitting element, and the quantum dot phosphor is distributed in the encapsulation layer a material and a non-quantum dot phosphor material, and wherein the quantum dot phosphor material is distributed in an end of the encapsulation layer away from the light emitting element to isolate the quantum dot phosphor material from the light emitting element The package structure provided by the embodiment reduces or avoids the influence of high temperature and high current on the reliability of the quantum dot phosphor material.

Description

Package structure and light emitting device including the same

The present invention relates to the field of illumination, and in particular to a package structure and a light-emitting device including the package structure.

The light emitting diode (LED) has advantages such as long life, small volume, high shock resistance, low heat generation and low power consumption, and thus has been widely used as an indicator or a light source in households and various devices. In recent years, light-emitting diodes have developed toward multiple colors and high brightness, so their application fields have expanded to large outdoor billboards, traffic lights and related fields. In the future, the light-emitting diodes may even become the mainstream of lighting sources that have both power saving and environmental protection functions. In order to make the light-emitting diodes have good reliability, the light-emitting diodes are often subjected to a packaging process to form a durable light-emitting device.

At present, in the case of a light-emitting diode package, the light-emitting diode is first mounted on a package holder (bearing bracket), and then the package rubber is covered on the light-emitting diode to complete the package of the light-emitting diode, wherein, in order to improve The luminous efficiency of the light-emitting diode is often added to the encapsulant layer by adding a quantum dot phosphor material and a non-quantum dot phosphor material. As shown in FIG. 10, the quantum dot (Quantum Dot, referred to as QD) The light body material 72 and the non-quantum dot phosphor material 71 are irregularly distributed in the encapsulation layer 7.

However, when the LED operates, the high temperature or high current generated makes the quantum dot The reliability of the phosphor material 72 is lowered, so that the luminous efficiency of the LED is affected, thereby causing the brightness of the LED to fail to meet expectations.

In view of this, how to improve the above-mentioned shortcomings is an issue to be solved in the industry.

In view of the above problems, the purpose of the present invention is to provide a package structure and a light-emitting device including the package structure, which solves the problem that the reliability of the quantum dot phosphor material in the LED package layer is affected by the high temperature and the current, thereby causing the LED to have luminous efficiency. Affected issues.

In order to achieve the above object, the present invention provides a package structure, the package structure includes: a light-emitting element; a carrier, wherein the carrier has a recess, the light-emitting element is disposed in the recess, and Electrically connecting the electrode portion on the carrier; and an encapsulation layer disposed in the recess and covering the light emitting element, wherein the encapsulation layer is distributed with quantum dot phosphor material and non- a quantum dot phosphor material, and the quantum dot phosphor material is distributed in an end of the encapsulation layer remote from the light emitting element to isolate the quantum dot phosphor material from the light emitting element.

Preferably, the encapsulation layer includes a first encapsulation layer and a second encapsulation layer overlying the first encapsulation layer, wherein the first encapsulation layer is disposed in the recess and covers the a side surface and a top surface of the light emitting element, and a lead of the light emitting element, the non-quantum dot phosphor material is located in the first encapsulation layer, and the quantum dot phosphor material is located in the second encapsulation layer Alternatively, both the quantum dot phosphor material and the non-quantum dot phosphor material are located in the second encapsulation layer.

Preferably, the encapsulation layer comprises a spacer layer, an encapsulant layer and a protective layer, wherein the quantum dot phosphor material and the non-quantum dot phosphor material are located in the package. In the adhesive layer, the isolation layer is disposed in the recess and covers the light emitting element, the adhesive layer covers the isolation layer, and the protective layer covers the adhesive layer.

Preferably, the isolation layer is a film layer made of a vulcanization resistant material; the protective layer is a protective layer made of a silicone resin.

Preferably, the isolation layer is an isolation layer made of white glue, and the top surface of the isolation layer is lower than or flush with the top surface of the light-emitting element.

Preferably, the quantum dot phosphor material and the leads of the light emitting element are separated by the encapsulation layer.

Preferably, the light emitting element comprises a first light emitting chip and a second light emitting chip, wherein a wavelength band of the first light emitting chip is different from a wavelength band of the second light emitting chip.

Preferably, one of the first light-emitting chip and the second light-emitting chip has a wavelength band of 445 to 447.5 nm, and the other wavelength band is 452.5 to 455 nm.

Preferably, the carrier includes: a housing, the housing includes a light emitting surface, a backlight surface, and a bottom surface, wherein the light emitting surface is disposed opposite to the backlight surface, and the bottom surface is disposed on the Between the light-emitting surface and the backlight surface, the groove is formed on the light-emitting surface; and a conductive bracket, the conductive bracket is partially covered by the housing, and the conductive brackets are separated from each other a first pin and a second pin, the first pin and the second pin each comprise an electrode portion and a bent portion, and the electrode portion passes through the recess from the housing Exposing that the bent portion extends outward from the electrode portion to the outside of the housing and toward the housing Bending the bottom surface; wherein one of the first pin and the second pin further comprises a heat dissipating portion extending outward from the electrode portion and from the housing The back surface is exposed.

Preferably, the housing further includes two sides, the two sides are disposed between the light emitting surface and the backlight surface, and the bottom surface is disposed between the two sides; wherein The bent portion extends outside the casing through the side surface and is bent toward the side surface and the bottom surface.

Preferably, the bent portion extends outward from the heat dissipating portion such that the bent portion extends indirectly from the electrode portion.

Preferably, the heat dissipation portion and the bent portion extend outward from opposite sides of the electrode portion, respectively.

Preferably, the housing further includes at least one support portion, the support portion is formed on the bottom surface; wherein a thickness of the support portion in a normal direction of the bottom surface is less than or equal to the bending The thickness of the part.

Preferably, one of the first pin and the second pin further comprises a bent portion, the secondary bent portion extending outward from the electrode portion to the outside of the housing and facing The bottom surface of the housing is bent; wherein the secondary bending portion is disposed between the bent portion of the first pin and the bent portion of the second pin.

Preferably, there is a gap between the first pin and the second pin, and the width of the gap is varied.

Preferably, the exposed surface of the heat dissipating portion exposed on the backlight surface The backlight surface is flush.

The present invention also provides a light emitting device, comprising: the package structure of any one of the above; a substrate, the substrate comprising a surface and a plurality of pads disposed on the surface, wherein the package structure is disposed in the On the surface, and the bottom surface of the package structure faces the surface, the package structure is electrically connected to the pad, and a heat sink is disposed on the surface, and the connection is The heat sink on the package structure.

Preferably, the substrate further comprises a support structure formed on the surface to support the light-emitting surface of the package structure.

Preferably, the support structure is a receiving slot or a supporting block.

Preferably, a light guiding member is further disposed on the surface and includes a light incident side, and the light incident side corresponds to the groove of the package structure.

The package structure and the illuminating device of the present invention can at least provide the following beneficial effects:

1. distributing the quantum dot phosphor material in an end of the encapsulation layer away from the light emitting element, such that the quantum dot phosphor material is isolated from the light emitting element or the lead of the light emitting element, and emits light The high temperature generated by the component or the high current on the lead is not easy to affect the reliability of the quantum dot phosphor material, ie, the effect of high temperature or current on the reliability (RA) of the quantum dot phosphor material, thereby reducing or avoiding The effect of the quantum dot phosphor material on the luminous efficiency of the light-emitting element.

2. Covering the encapsulant layer of the quantum dot phosphor material through the isolation layer and the protective layer, so that when the temperature is affected by the high temperature, the isolation layer can prevent the released S element from causing blackening of the carrier, and at the same time, the protective layer can be prevented. Oxygen reacts with the quantum dot phosphor material to cause oxidation reaction The blackening of the carrier and the oxidation reaction of the quantum dot phosphor material are avoided.

3. The package structure is disposed on the surface of the substrate through the bent portion, so that the normal direction of the light-emitting surface of the package structure (ie, the light-emitting direction) is interleaved (or perpendicular to the normal direction of the surface of the substrate) (or perpendicular) Therefore, the package structure can be used for lateral illumination. In addition, the bent portion of the package structure has a small tin contact surface, so that the package structure is less displaced by soldering, thereby reducing the effect of the upper part error.

4. Since the heat dissipating portion of the conductive bracket is exposed outside the casing, it can be connected to the external heat sink, so that the heat energy generated by the light emitting component (such as the light emitting diode) can be dissipated more quickly to reduce or avoid the performance of the light emitting component. Reduced due to high temperatures. Therefore, even if the tin contact surface is reduced, the package structure can effectively eliminate thermal energy.

5. Since the bent portion has a good structural strength after being bent twice, when an external force acts on the package structure provided on the substrate, it is difficult to break or deform the bent portion. In addition, the secondary bent portion can share the force of the bent portion, so that the bent portion is less likely to be broken or deformed.

The above objects, technical features and advantages will be more apparent from the following description.

1‧‧‧Carrier

10‧‧‧shell

11‧‧‧Glossy

12‧‧‧ Backlit surface

13‧‧‧ bottom

14‧‧‧ Groove

15‧‧‧ side

16‧‧‧Support

20‧‧‧conductive bracket

21‧‧‧First pin

22‧‧‧second pin

23‧‧‧Electrode

24‧‧‧Bending

3‧‧‧Substrate

31‧‧‧ surface

32‧‧‧ solder pads

33‧‧‧Support structure

331‧‧‧ accommodating slots

332‧‧‧Support block

4‧‧‧ Heat sink

5‧‧‧Light guides

51‧‧‧light side

6‧‧‧Lighting elements

61‧‧‧ lead

7‧‧‧Encapsulation layer

71‧‧‧Non-quantum dot phosphor material

25‧‧‧ Department of heat dissipation

251‧‧‧ exposed face

26‧‧‧ bends

27‧‧‧ gap

2‧‧‧Lighting device

200‧‧‧Metal plates

72‧‧‧Quantum point phosphor material

701‧‧‧First encapsulation layer

702‧‧‧Second encapsulation layer

703‧‧‧Isolation

704‧‧‧Package layer

705‧‧‧Protective layer

In order to more clearly explain the present embodiment or the technical solutions in the prior art, a brief description of the drawings used in the embodiments or the prior art description will be briefly described below. Obviously, the drawings in the following description are Some embodiments of the creation, for those of ordinary skill in the art, can obtain other schemas based on these schemas without paying for creative labor.

1A is a schematic cross-sectional view of a light-emitting element and an encapsulation layer in a package structure according to the first embodiment of the present invention; FIG. 1B is a schematic cross-sectional view showing another structure of a light-emitting element and an encapsulation layer in the package structure provided by the first embodiment; 2A is a schematic cross-sectional view of a light-emitting element and an encapsulation layer in a package structure provided in the second embodiment of the present invention; FIG. 2B is a schematic cross-sectional view showing another cross-sectional structure of the light-emitting element and the encapsulation layer in the package structure provided by the second embodiment; 3A is a schematic perspective view of a carrier structure in a package structure provided by the present invention; FIG. 3B is a schematic structural view of a backlight surface of a carrier in the package structure provided by the present invention; FIG. 3C is a package structure provided in the present invention. FIG. 4A is a schematic structural view of a conductive support in a carrier of the package structure provided by the present invention; FIG. 4B is a cross-sectional view of the conductive support in the carrier of the package structure provided by the present invention; 5A is a schematic diagram of the structure of the conductive bracket and the casing during the manufacturing process of the package structure provided by the present invention; FIG. 5B is provided by the present creation FIG. 6A is a schematic structural view of a conductive bracket and a casing when the package structure is completed by the creation of the package structure; FIG. 6B is a schematic diagram of the package structure provided by the present invention. A schematic cross-sectional view of the conductive bracket and the housing when completed; 6C is a schematic side view of the conductive bracket and the casing when the package structure provided by the present invention is completed; FIG. 7 is a schematic structural view of the light-emitting device provided in the third embodiment of the present invention; FIG. 8A to FIG. 8B are the implementation of the present invention. Example 3 is a schematic diagram of a structure in which a substrate has a supporting mechanism in a light-emitting device provided in FIG. 3; FIG. 9 is a schematic view showing a case where a light-emitting element in a light-emitting device provided by the present invention adopts mixed crystal; FIG. 10 is a light-emitting element and an encapsulating layer in a conventional package structure; Schematic diagram of the cross section structure.

In order to make the objectives, technical solutions, and advantages of the present embodiments more clear, the technical solutions in the present creative embodiment will be clearly and completely described in conjunction with the drawings in the present embodiments. It is a part of the embodiment of the present invention, and not all of the embodiments. Based on the embodiments in the present writing, all other embodiments obtained by those of ordinary skill in the art without creative efforts are within the scope of the present invention.

Embodiment 1

1A is a schematic cross-sectional view of a light-emitting device and an encapsulation layer in a package structure according to the first embodiment of the present invention. FIG. 1B is a schematic cross-sectional view showing another structure of a light-emitting device and an encapsulation layer in a package structure according to the first embodiment of the present invention.

The package structure of the present embodiment includes: a light-emitting element 6, a carrier 1 and an encapsulation layer 7, wherein the carrier 1 has a recess 14 formed therein, and the light-emitting element 6 is disposed in the recess 14 and electrically connected An electrode portion on the body 1, the encapsulation layer 7 is disposed in the recess 14 and covers the light emitting element 6. The quantum dot phosphor material 72 and the non-quantum dot phosphor material 71 are distributed in the encapsulation layer 7.

In this embodiment, in order to prevent the influence of high temperature or high current on the reliability of the quantum dot phosphor material 72, specifically, as shown in FIG. 1A, the quantum dot phosphor material 72 is distributed on the encapsulation layer 7 away from the light emitting element. In one end of the 6th, the quantum dot phosphor material 72 is away from the light-emitting element 6 and the lead 61 of the light-emitting element, so that the distance between the quantum dot phosphor material 72 and the light-emitting element 6 is increased to achieve quantum dot fluorescence. The purpose of isolating the bulk material 72 from the light-emitting element 6, wherein in the present embodiment, the quantum dot phosphor material 72 is separated from the lead 61 of the light-emitting element 6 by the encapsulation layer 7, such that the high-temperature or light-emitting element 6 produced by the light-emitting element 6 The high current on the leads does not easily affect the reliability of the quantum dot phosphor material 72, i.e., reduces the effect of high temperature or current magnitude on the reliability (RA) of the quantum dot phosphor material 72.

In this embodiment, when the quantum dot phosphor material 72 is distributed in the end of the encapsulation layer 7 away from the light-emitting element 6, the quantum dot phosphor material 72 may be distributed in the encapsulation layer 7 away from the light-emitting component by inverting centrifugal treatment. In one end of the 6th, the non-quantum dot phosphor material 71 may also be distributed in the end of the encapsulation layer 7 away from the light-emitting element 6 as shown in FIG. 1A, or the non-quantum dot phosphor material 71 may be as shown in FIG. 1B. The distribution is shown in the end of the encapsulation layer 7 adjacent to the light-emitting element 6.

In this embodiment, the quantum dot phosphor material 72 may be SiO ₂ , and the average particle diameter of the SiO ₂ is preferably 2 nm, and the non-quantum dot phosphor material 71 may be a fluoride phosphor (KSF). And SiO ₂ and KSF are distributed in the encapsulation layer 7, and the encapsulation layer 7 is filled in the grooves 1414.

In this embodiment, for comparison, the package structure shown in FIG. 10, FIG. 1A, and FIG. 1B is subjected to a variable temperature and humidity test, and the test results are shown in Table 1 (wherein sample 1 is corresponding to FIG. 10). Package structure, sample 2 is the package structure corresponding to FIG. 1B, and sample 3 is the package structure corresponding to FIG. 1A):

Wherein, ΔLM in the table is a Lumen change value of the light-emitting element 6, and it can be seen from the table that, in comparison with the sample 1 and the sample 2, in the present embodiment, the encapsulation layer 7 is illuminated by inverted centrifugation. The ΔLM of the element 6 (i.e., sample 3) is small in 0-72h, that is, in the light-emitting element 6 provided in the embodiment, the quantum dot phosphor material 72 and the non-quantum-point phosphor material 71 are inverted. When the encapsulation treatment is distributed in the end of the encapsulation layer 7 away from the light-emitting element 6, the light decay of the light-emitting device in 0-72h is small. Therefore, the light-emitting element 6 provided in this embodiment passes through the quantum dot phosphor material 72 and the non-quantum. The point phosphor material 71 is distributed by the inverted centrifugation treatment when the encapsulation layer 7 is away from the end of the light-emitting element 6, and the reliability (RA) of the light-emitting element 6 is greatly improved.

Therefore, the package structure provided in this embodiment is distributed in the end of the encapsulation layer 7 away from the light-emitting element 6 by distributing the quantum dot phosphor material 72, so that the distance between the quantum dot phosphor material 72 and the light-emitting element 6 is changed. Large, thereby achieving the purpose of isolating the quantum dot phosphor material 72 from the light-emitting element 6, so that the high temperature generated by the light-emitting element 6 or the high current on the lead is not easy to affect the reliability of the quantum dot phosphor material 72, that is, reduced. The effect of the high temperature or current magnitude on the reliability (RA) of the quantum dot phosphor material 72 reduces or avoids the effect of the quantum dot phosphor material 72 on the luminous efficiency of the light-emitting element 6.

Further, in this embodiment, as shown in FIG. 1B, the encapsulation layer 7 includes a first encapsulation layer 701 and a second encapsulation layer 702 overlying the first encapsulation layer 701, that is, the encapsulation layer 7 has a two-layer structure. The first encapsulation layer 701 covers the groove bottom of the groove 14, the side surface and the top surface of the light-emitting element 6, and the lead 61. The non-quantum-point phosphor material 71 is located in the first encapsulation layer 701, and the quantum dot phosphor material 72 Located in the second encapsulation layer 702 (as shown in FIG. 1B), or both the quantum dot phosphor material 72 and the non-quantum dot phosphor material 71 are located in the second encapsulation layer 702 (as shown in FIG. 1A). Thus, the quantum dot phosphor material 72 in the second encapsulation layer 702 is isolated from the highest temperature light-emitting element 6 and the lead 61 of the light-emitting element 6 through the first encapsulation layer 701, thereby reducing or avoiding high temperature and high current versus quantum The effect of the reliability of the point phosphor material 72.

Embodiment 2

In the package structure provided in this embodiment, the encapsulation layer 7 is a sandwich structure. Specifically, the encapsulation layer 7 includes a spacer layer 703, an encapsulant layer 704 and a protective layer 705. The quantum dot phosphor material 72 is disposed. The non-quantum dot phosphor material 71 is located in the encapsulant layer 704. The isolation layer 703 covers at least the groove bottom of the recess 14 and the side of the light emitting element 6. The encapsulant layer 704 covers at least the first encapsulation layer 701. The protective layer 705 is overlaid on the encapsulant layer 704. In the embodiment, as shown in FIG. 2A, the isolation layer 703 covers the groove bottom of the groove 14, the side surface and the top surface of the light-emitting element 6, and the light-emitting element 6. The lead 61 and the encapsulant layer 704 cover the isolation layer 703. In the present embodiment, when the high temperature or current magnitude affects the reliability of the quantum dot phosphor material 72, the quantum dot phosphor material 72 contains the S element and is subjected to high temperature. After the influence, the S element is released, which causes the carrier 1 to be blackened, and the quantum dot phosphor material 72 easily reacts with oxygen when excited by light, resulting in a decrease in the efficiency of the quantum dot phosphor material 72. In the embodiment, in order to prevent The S element released causes the carrier 1 to blacken and the oxygen of the quantum dot phosphor material 72 The reaction layer, specifically, covers the encapsulant layer 704 where the quantum dot phosphor material 72 is disposed through the isolation layer 703 and the protective layer 705, so that the isolation layer 703 can prevent the released S element from being caused by the high temperature. 1 blackening, at the same time, the protective layer 705 can prevent the oxygen from contacting the quantum dot phosphor material 72 to cause an oxidation reaction, thus avoiding the blackening of the carrier 1 and the oxidation reaction of the quantum dot phosphor material 72.

In this embodiment, the isolation layer 703 is specifically a film layer made of a sulfur-resistant material (S-barrier) or white glue. In the embodiment, the anti-vulcanization material is specifically a silicone resin, and the epoxy resin is specifically You can use the chemical model ASP-2031 produced by Shin-Etsu.

In this embodiment, when the isolation layer 703 is a film layer made of a vulcanization resistant material, the isolation layer 703 can prevent the released S element from diffusing onto the carrier 1, and the isolation layer 703 is white when it is white. The glue affects the light emission of the light-emitting element 6, so as shown in FIG. 2B, the top surface of the isolation layer 703 is lower than or flushes the top surface of the light-emitting element 6, that is, the isolation layer 703 cannot exceed the top surface of the light-emitting element 6, and the isolation layer The thickness of the 703 is lower than that of the light-emitting element 6. In this embodiment, when the white layer is used as the isolation layer 703, the white glue covers the silver plating layer at the bottom of the groove of the groove 14 to prevent the silver plating layer from being sulfur black. In the present embodiment, when the separator 703 is made of a tantalum resin, since the hardness of the tantalum resin is high, it is possible to prevent the sulfur from directly blackening the carrier 1.

In the present embodiment, since the epoxy resin has high refractive index, high stability, and gas barrier effect, the protective layer 705 is a film layer made of a neodymium resin, thereby preventing oxygen and quantum dot phosphors. The material 72 is contacted to cause oxidation, and the protective layer 705 may also be a silicone resin of the type ASP-2031.

Further, based on the above embodiment, in this embodiment, the illuminating element The device 6 includes a first light emitting chip and a second light emitting chip (not shown), wherein the wavelength band of the first light emitting chip is different from the wavelength band of the second light emitting chip, that is, in the embodiment, the light emitting element 6 adopts two different wavelength bands. The wafer is mixed with light, wherein, in this embodiment, specifically, one of the first light-emitting chip and the second light-emitting chip has a wavelength band of 445 to 447.5 nm, and the other wavelength band is 452.5 to 455 nm, which is verified by experiments. As shown in Fig. 9, when a wafer with two different wavelength bands and a span of 10 nm is mixed, a wavelength falling within a span of 2 nm can be obtained, that is, the span of the wavelength band is reduced, and the width of the wavelength band is narrowed, so that Avoid color saturation reduction.

In this embodiment, the package structures corresponding to the 10th, 1A, and 1B and 2A to 2B are tested. The test structure is as shown in Figure 2:

It can be seen from Table 2 that when the encapsulation layer 7 adopts a two-layer structure and a sandwich structure, the lumen change value of the light-emitting element 6 is lower than -33.69%, that is, when the encapsulation layer 7 adopts a two-layer structure and a sandwich structure, the light-emitting element 6 is used. The reliability improvement has helped.

3A is a schematic perspective view of the carrier structure in the package structure provided by the present invention, and FIG. 3B is a schematic structural view of the backlight surface of the carrier in the package structure provided by the present invention, and FIG. 3C is a carrier structure provided in the present invention. Schematic diagram of the three-dimensional structure of the body backlight surface, FIG. 4A is a schematic structural view of the conductive bracket in the carrier body of the package structure provided by the present invention, section 4B The figure is a schematic cross-sectional view of the conductive support in the carrier of the package structure provided by the present invention, and FIG. 5A is a schematic structural view of the conductive support and the casing during the manufacturing process of the package provided by the present invention, and FIG. 5B is a schematic view provided by the present invention. FIG. 6A is a schematic view showing the structure of the conductive support and the casing when the package structure is completed by the creation of the package structure, and FIG. 6B is a complete view of the package structure provided by the present creation. A schematic cross-sectional view of the conductive bracket and the housing, and FIG. 6C is a schematic side view of the conductive bracket and the housing when the package structure provided by the present invention is completed.

Further, based on the above embodiment, in the present embodiment, as shown in FIG. 3A to FIG. 6C, the carrier 1 includes a housing 10 and a conductive bracket 20, and the technical contents of the components are as follows.

The casing 10 may be formed by a common encapsulating material such as a material that is opaque or light-shielding, such as a thermosetting resin, a thermoplastic resin, PPA, PCT, and a polymer resin, in which a reflective material and heat dissipation may be added. The material, such as TiO ₂ or SiO ₂ , and the housing 10 of the structure is substantially a cube, and may include a light emitting surface 11 , a backlight surface 12 , a bottom surface 13 and two side surfaces 15 . The surface of the element 6 (as shown in FIG. 5) is emitted, so that the normal direction of the light-emitting surface 11 can be defined as the light-emitting direction of the light-emitting element 6; the light-emitting surface 11 is disposed opposite to the backlight surface 12, so the method of the backlight surface 12 The light is directed away from the light exiting direction and the light should not be emitted from the backlight surface 12. Preferably, the light-emitting surface 11 and the backlight surface 12 can be a plane, and the two are parallel.

The bottom surface 13 and the two side surfaces 15 are connected to the light-emitting surface 11 and the backlight surface 12 , and are disposed between the light-emitting surface 11 and the backlight surface 12 , and the bottom surface 13 is further disposed between the two side surfaces 15 . In other words, the side surface 15, the bottom surface 13 and the other side surface 15 are sequentially along the edge and back of the light-emitting surface 11 The edge of the smooth surface 12 is formed to be sandwiched between the light-emitting surface 11 and the backlight surface 12. Preferably, the bottom surface 13 and the side surface 15 are perpendicular to the light-emitting surface 11 and the backlight surface 12. Further, the bottom surface 13 and the two side surfaces 15 may be non-planar, but have a structure such as a step or a chamfer.

The groove 14 is recessed on the light-emitting surface 11, and the bottom of the groove 14 has an opening for exposing the electrode portion 23 of the conductive holder 20 to be described later. Preferably, the side surface of the groove 14 is inclined with respect to the light-emitting surface 11 so that more light can be emitted from the light-emitting surface 11, that is, the light extraction efficiency is increased. The groove 14 may be filled with a resin in which a phosphor powder may be added to change the wavelength (color) of the light. Moreover, the housing 10 preferably further includes at least one support portion 16. For example, the support portion 16 may be two. The two support portions 16 are formed on the bottom surface 13 by protrusions. Preferably, the bottom surface and the curved portion of the support portion are curved. The bottom surface of the folded portion is flush, and further, the bending of the bent portion 24 or the secondary bent portion 26 to be described later is assisted, and the structural stability of the carrier 1 and the substrate 3 (shown in FIG. 5) to be described later may be increased. (Because the support portion 16 has the possibility of contacting the surface 31 of the substrate 3). Preferably, the total area of the bottom surface of the support portion 16 can be smaller than the total area of the bottom surface of the secondary bent portion 26, so that the heat dissipation area of the lead can be increased, and the stability of the combination of the package structure and the substrate described later can be assisted. In addition, the surface area of the light-emitting surface 11 is larger than the surface area of the opening of the groove 14, and the groove 14 will be disposed adjacent to a top surface of the housing (ie, the side opposite to the bottom surface 13 of the housing), so that the light guide member can be effectively used with the light guide member. 5 close to avoid light leakage.

The conductive support 20 can be formed by stamping, punching or bending a metal plate (such as pure metal, alloy and metal composite laminate); as shown in Figures 2A to 2B, the conductive support 20 has not been separated from the metal plate 200. The conductive bracket 20 is partially covered by the casing 10 so as to be sandwiched by the casing 10, and the conductive bracket 20 includes the first pin 21 and the second pin 22 which are separated from each other, so the first pin 21 and the second lead Between the feet 22 (ie between the faces facing each other) A gap 27 is formed. Or it can be said that the gap 27 is a depletion region formed by punching and cutting a specific portion of the metal plate 200 by a cutter. Preferably, the width of the gap 27 is varied, that is, the gap 27 can be designed to include a first gap and a second gap, and the first gap and the second gap can be connected to each other, and the first gap can be Providing and exposing to the bottom of the groove, and the second gap may be disposed in the casing and covered by the resin material of the casing; wherein the first gap has a first width, and the second The gap has a second width greater than the first width, whereby the portion of the first and second pins adjacent to the first gap can be stably fixed due to the small width of the first gap, and thus is suitable for wafer fixing And the area where the line is wired. On the other hand, the width of the second gap is large, and the second gap can be filled with more resin material, and the vibration caused by the solid crystal and the wire is absorbed in the process; thus, the thickness of the tool is correspondingly Variants (or a plurality of tools of different thicknesses but short lengths), a tool with a variable thickness (or a non-slim tool) can be preferred compared to a single tool that is uniform in thickness and thin and long. The structural strength increases the life of the tool.

Referring to FIGS. 4A to 4B , the first pin 21 and the second pin 22 both include an electrode portion 23 and a bent portion 24 . The electrode portion 23 is further away from the bottom surface 13 of the housing 10 and exposed from the housing 10 through the recess 14 so that the light-emitting element 6 can be electrically connected to the electrode portion 23 when the light-emitting element 6 is disposed in the recess 14 . The electrode portion 23 of the first lead 21 may be larger than the electrode portion 23 of the second lead 22 in terms of area, so that the formation of the heat radiating portion 25 will be described later. Further, the gap 27 between the electrode portions 23 may have a small width. The bent portion 24 extends outward from the electrode portion 23 and is integrally formed with the electrode portion 23. In addition, the outer side surface of the bent portion 24 is flush with the outer side surface 15 of the casing 10. Thus, the area of the diffusion of the bonding pad 32 (shown in FIG. 7) can be prevented from being reduced to reduce the short circuit. The possibility. The outer side surface area of the bent portion 24 can also be larger than the bottom side area, Excessive solder can be reduced between the bottom surface of the bent portion and the substrate 3, so that the package structure cannot be flat on the substrate 3.

Referring to FIGS. 5A-5B, the bent portion 24 can extend from the side 15 of the housing 10 after the housing 10 partially covers the conductive bracket 20 during the manufacturing process. Next, referring to FIGS. 6A to 6C, the bent portion 24 will be initially bent toward the side surface 15 of the casing 10, and then the initially bent portion can be leaned against the support portion 16 formed on the casing 10. 24 continues to bend the bottom surface 13 of the housing 10 twice. That is, the bent portion 24 is bent twice in different directions to increase its structural strength; however, the bent portion 24 may also extend directly from the bottom surface 13 out of the casing 10 and then directly bent toward the bottom surface 13. Further, the bent portion 24 is spaced (not in contact with) the bottom surface 13 and/or the side surface 15 of the casing 10, but can also abut against and contact the bottom surface 13 and/or the side surface 15.

The bent portion 24 is for connecting to the pad 32 of the substrate 3 (as shown in FIG. 7), and has a small tin contact surface (the width of which is not larger than the width of the bottom surface 13), so that the bent portion is attached to the bend The portion 24 should have less solder, and the excess solder can extend into the gap between the bottom surface 13 and the bent portion 24 to form a buffer, and also prevent the package structure from being flat on the substrate 3.

Preferably, in this embodiment, one of the first pin 21 and the second pin 22 further includes a first bent portion 26, and the first bent portion 22 is taken as an example, and the secondary bent portion 26 is composed of the electrode portion 23 Extending outwardly to the outside of the bottom surface 13 of the housing 10 (as shown in FIG. 5A), and also leaning against the support portion 16 to bend the secondary bending portion 26 toward the bottom surface 13 of the housing 10 (as shown in FIG. 6A) The secondary bending portion 26 is located between the two bending portions 24 (ie, between the two supporting portions 16) and is commonly located outside the bottom surface 13 of the housing 10. Further, the bending direction of the secondary bending portion 26 can be curved. The bending direction of the folded portion 24 is vertical, so that the bottom surface of the secondary bent portion 26 can also be flush with the bottom surface of the support portion 16. The secondary bend portion 26 is also used to connect to the pad 32 of the substrate 3 (as shown in FIG. 7), increasing the connection between the first pin 21 and the pad 32. The joint area and the heat dissipation area further increase the bonding strength between the carrier 1 and the substrate 3. Alternatively, the secondary bend portion 26 can also be selected to abut or contact the bottom surface 13 and/or the side surface 15. On the other hand, the width of the secondary bend portion will also be smaller than the width of the bottom surface 13, so that it can also serve as a buffer region for excessive solder.

In addition, along the normal direction of the bottom surface 13, the thickness of the support portion 16 in the normal direction of the bottom surface 13 should not be greater than (ie, less than or equal to) the thickness of the bent portion 14 and the secondary bent portion 26, so that the support portion 16 does not protrude. The bending portion 14 and the secondary bending portion 26 do not affect the connection between the bent portion 14 and the secondary bent portion 26 and the substrate 3.

Referring to FIG. 5A and FIG. 6B , in the embodiment, one of the first pin 21 and the second pin 22 further includes a heat dissipating portion 25 . Taking the first pin 22 as an example, the heat dissipating portion 25 It also extends outward from the electrode portion 23, and then the bent portion 24 (the secondary bent portion 26) extends from the heat radiating portion 25 to the outside of the casing 10. The extending direction is opposite to the direction in which the groove is opened, and the heat radiating portion 25 may be a concave portion design, and in order to increase heat dissipation efficiency and reduce thermal resistance, the depth of the concave portion of the heat dissipation portion needs to be smaller than the depth of the groove; in other words, the heat dissipation portion 25 is disposed between the electrode portion 23 and the bent portion 24, and the bent portion 24 is indirectly The ground extends outward from the scattering portion 25. Further, since the heat radiating portion 25 is also exposed to the backlight surface 12 of the casing 10 with respect to the electrode portion 23, the exposed surface 251 of the heat radiating portion 25 is not covered by the casing 10.

In more detail, the exposed surface 251 exposed by the heat dissipating portion 25 can be flush (or more prominent) with the backlight surface 12, so that the exposed surface 251 can be connected to a heat dissipating member (for example, a heat conducting block, a fin or a fan, etc.) Therefore, the light-emitting element 6 will generally be disposed on the lead having the heat-dissipating portion 25, and the heat emitted by the light-emitting element 6 can be quickly dissipated through the exposed surface 251 of the heat-dissipating portion, so that the arrangement has illumination Component 6 pins, with respect to the other pin, can have a lower thermal resistance. Furthermore, as described above, the pin additionally includes at least two bends extending to the housing The outer side or the bottom side can also increase heat dissipation and reduce thermal resistance.

In addition, in other embodiments, the heat dissipation portion 25 and the secondary bending portion 26 may also be included by the second pin 22, or both the first pin 21 and the second pin 22 include respective heat dissipation portions. 25 and/or secondary bends 26. In addition, the electrode portion 23 may be disposed between the heat radiating portion 25 and the bent portion 24, and the heat radiating portion 25 and the bent portion 24 may extend outward from opposite sides of the electrode portion 23, respectively. The electrode portion 23 and the recess 14 are closer to the bottom surface 13 of the casing 10, and the heat radiating portion 25 is relatively far from the bottom surface 13.

Embodiment 3

7 is a schematic structural view of a light-emitting device according to a third embodiment of the present invention, and FIG. 8A to FIG. 8B are schematic structural views of a light-emitting device provided in the third embodiment of the present invention.

The above embodiment is a description of the technical contents of the package structure, and then an application example of the carrier package structure, that is, the light-emitting device 2 provided in accordance with the preferred embodiment of the present invention. The detailed technical content of the package structure should be referred to each other, so the same part will be omitted or simplified.

Referring to FIG. 7 , the light-emitting device 2 includes at least one package mechanism as described above, and further includes a substrate 3 , a heat sink 4 and a light guide 5 . The technical content of each component is further described below.

The substrate 3 (eg, a circuit board) includes a surface 31 and a plurality of pads 32 disposed on the surface 31. Wherein, the carrier 1 is disposed on the surface 31, and the bottom surface 13 of the housing 10 faces the surface 31, and the bent portion 24 (the secondary bent portion 26) located on the bottom surface 13 is soldered to the bonding pad 32, so that the first The bent portions 24 of one pin 21 and the second pin 22 are electrically connected to the pads 32, respectively. A solder (solder paste, not shown) is applied between the bent portion 24 and the pad 32. Further, the normal direction of the light-emitting surface 11 of the casing 10 is staggered and perpendicular to the normal direction of the surface 31.

In order to improve the bonding strength between the carrier 1 and the substrate 3, the substrate 3 further includes a supporting structure 33 formed on the surface 31 to support the light-emitting surface 11 of the carrier 1. Specifically, the supporting structure 33 may be a receiving groove 331 (as shown in FIG. 8A), or the supporting structure 33 may also give the light-emitting surface 11 a supporting force in the form of the supporting block 332 (shown in FIG. 8B). .

In addition, the light-emitting element 6 is disposed in the recess 14 of the housing 10 (as shown in FIG. 3B), and via the recess 14 and the electrode portion 23 of the first lead 21 and the electrode portion 23 of the second lead 22 (As shown in FIG. 3B), an electrical connection is formed so that the light-emitting element 6 can sequentially pass through the electrode portion 23 of the conductive holder 20, the bent portion 24, and the pad 32 of the substrate 3 to form a conductive path with the outside.

The heat dissipating member 4 is disposed on the surface 31 of the substrate 3 and connected to the heat radiating portion 25 of the conductive holder 20. Preferably, the exposed surface 251 of the heat dissipating portion 25 in contact with the heat dissipating member 4 is coated with a heat dissipating paste so that the contact surface thereof has a desired thermal conductivity, thereby improving the heat dissipating efficiency.

It is to be noted that, in a specific embodiment, the single heat sink 4 corresponds to the single carrier 1 and is connected to the heat dissipating portion 25 to perform its heat dissipation mechanism; in other embodiments, the single heat sink 4 can simultaneously correspond to The plurality of carriers 1 are connected to each other and thermally connected to the heat dissipation portions 25 of the carriers 1 .

Regarding the light guiding member 5, it is also disposed on the surface 31 of the substrate 3 and includes a light incident side 51, the position of the light incident side 51 corresponding to the recess 14 of the housing 10 containing the light emitting element 6, and not in size It is smaller than the groove 14 so that the light emitted from the light-emitting element 6 enters the light guide 5 as far as possible from the light-incident side 51. The light can be transmitted through the light guide 5 and uniformly emitted from the light emitting side of the light guide 5 to an element such as a display panel (not shown). The light guiding member 5 can also correspond to the plurality of carrier bodies 1 at the same time. The light incident side 51 is aligned with the grooves of the carrier bodies 1.

In summary, the package structure and the light-emitting device provided by the present invention can stably combine the package structure and the substrate, and effectively reduce the upper component error of the package structure, thereby increasing the alignment accuracy between the light-emitting component and the light guide member, and simultaneously Through the heat dissipating portion, the heat dissipating effect affected by the reduction of the contact structure between the package structure and the substrate is improved by the heat dissipating portion, so as to maintain the luminous efficiency of the light emitting device, and the quantum dot phosphor material and the highest temperature light emitting device in the package structure. Or lead isolation, thus ensuring the reliability of the quantum dot phosphor material, thereby ensuring the reliability of the light-emitting device.

The light-emitting element 6 used in the present invention can emit a wavelength of substantially 400 nm to 530 nm, and the manufacturing method thereof is explained below. First, a multi-material layer structure is first formed on a substrate by metalorganic chemical vapor deposition (MOCVD) or the like, which includes, for example, an N-type layer, a light-emitting layer, a P-type layer, and a current diffusion layer. The N-type layer, the light-emitting layer, and the P-type layer are, for example, GaN, AlGaN, InGaN, AlInGaN, or a similar compound composed of any elements such as Al, In, Ga, and N, which can be subjected to organometallic chemical vapor deposition or molecular beam ray. The crystal process grows on the substrate. The current spreading layer 18 is composed of a lower resistance metal such as nickel, gold or an alloy thereof or a transparent conductive oxide material. In general, the metal composite structure suitable for the current diffusion layer may comprise metals such as Ti, Al, Pt, Ni, Au, Pd, Co, Cr, Sn, Nd or Hf, and the transparent conductive oxide material may comprise indium tin oxide. Cadmium tin oxide, ZnO: Al, ZnGa ₂ O ₄ , SnO ₂ : Sb, Ga ₂ O ₃ : Sn, AgInO ₂ : Sn, In ₂ O ₃ : Zn, NiO, MnO, FeO, Fe ₂ O ₃ , CoO, CrO, Cr ₂ O ₃ , CrO ₂ , CuO, SnO, GaO, RuO ₂ , Ag ₂ O, CuAlO ₂ , SrCu ₂ O ₂ , LaMnO ₃ , PdO, and the like.

In this embodiment, the non-quantum dot phosphor material may also be selected from one or more of the following groups: (Sr, Ba)Si ₂ (O, Cl) ₂ N ₂ :Eu ²⁺ , Sr ₅ (PO4) ₃ Cl:Eu ²⁺ , (Sr,Ba)MgAl ₁₀ O ₁₇ :Eu ²⁺ ,(Sr,Ba) ₃ MgSi ₂ O ₈ :Eu ²⁺ ,SrAl ₂ O ₄ :Eu ²⁺ , SrBaSiO ₄ :Eu ²⁺ , CdS:In, CaS:Ce ³⁺ , (Y,Lu,Gd) ₃ (Al,Ga) ₅ O ₁₂ :Ce ³⁺ , Ca ₃ Sc ₂ Si ₃ O ₁₂ :Ce ^{3 +} , SrSiON: Eu ²⁺ , ZnS: Al ³⁺ , Cu ⁺ , CaS : Sn ²⁺ , CaS : Sn ²⁺ , F, CaSO ₄ : Ce ³⁺ , Mn ²⁺ , LiAlO ₂ : Mn ²⁺ , BaMgAl ₁₀ O ₁₇ :Eu ²⁺ , Mn ²⁺ , ZnS:Cu ⁺ , Cl-, Ca ₃ WO ₆ :U, Ca ₃ SiO ₄ Cl ₂ :Eu ²⁺ , Sr _x Ba _y ClzAl ₂ O _4-z/2 :Ce ³⁺ , Mn ²⁺ (X: 0.2, Y: 0.7, Z: 1.1), Ba ₂ MgSi ₂ O ₇ :Eu ²⁺ , Ba ₂ SiO ₄ :Eu ²⁺ , Ba ₂ Li ₂ Si ₂ O ₇ :Eu ²⁺ , ZnO:S, ZnO:Zn, Ca ₂ Ba ₃ (PO ₄ ) ₃ Cl:Eu ²⁺ , BaAl ₂ O ₄ :Eu ²⁺ , SrGa ₂ S ₄ :Eu ²⁺ , ZnS:Eu ^{2 +} , Ba ₅ (PO ₄ ) ₃ Cl:U, Sr ₃ WO ₆ :U, CaGa ₂ S ₄ :Eu ²⁺ , SrSO ₄ :Eu ²⁺ , Mn ²⁺ , ZnS:P, ZnS:P ^3- , Cl ^- , ZnS: Mn ²⁺ , CaS: Yb ²⁺ , Cl, Gd ₃ Ga ₄ O ₁₂ : Cr ³⁺ , CaGa ₂ S ₄ : Mn ²⁺ , Na(Mg, Mn) ₂ LiSi ₄ O ₁₀ F ₂ : Mn, ZnS: Sn ²⁺ , Y ₃ Al ₅ O ₁₂ :Cr ³⁺ , SrB ₈ O ₁₃ :Sm ²⁺ , MgSr ₃ Si ₂ O ₈ :Eu ²⁺ , Mn ²⁺ , α-SrO ₃ B ₂ O ₃ :Sm ^{2 +} , ZnS-CdS, ZnSe: Cu ⁺ , Cl, ZnGa ₂ S ₄ : Mn ²⁺ , ZnO: Bi ³⁺ , BaS: Au, K, ZnS: Pb ²⁺ , ZnS: Sn ²⁺ , Li ⁺ , ZnS : Pb, Cu, CaTiO ³ : Pr ³⁺ , CaTiO ₃ : Eu ³⁺ , Y ₂ O ₃ : Eu ³⁺ , (Y, Gd) ₂ O ₃ : Eu ³⁺ , CaS: Pb ²⁺ , Mn ²⁺ , YPO ₄ :Eu ³⁺ , Ca ₂ MgSi ₂ O ₇ :Eu ²⁺ , Mn ²⁺ , Y(P,V)O ₄ :Eu ³⁺ , Y ₂ O ₂ S:Eu ³⁺ , SrAl ₄ O ₇ :Eu ³⁺ , CaYAlO ₄ :Eu ³⁺ , LaO ₂ S:Eu ³⁺ , LiW ₂ O ₈ :Eu ³⁺ ,Sm ³⁺ ,(Sr,Ca,Ba,Mg) ₁₀ (PO ₄ ) ₆ Cl ₂ :Eu ²⁺ , Mn ²⁺ , Ba ₃ MgSi ₂ O ₈ :Eu ²⁺ , Mn ²⁺ , ZnS:Mn ²⁺ , Te ²⁺ , Mg ₂ TiO ₄ :Mn ⁴⁺ , K ₂ SiF ₆ :Mn ^{4 +} , SrS: Eu ²⁺ , Na _1.23 K _0.42 Eu _0.12 TiSi ₄ O ₁₁ , Na _1.23 K _0.42 Eu _0.12 TiSi ₅ O ₁₃ :Eu ³⁺ , CdS:In,Te,(Sr,Ca)AlSiN ₃ :Eu ^{2 _{+, CaSiN 3: Eu 2+,}} (Ca, Sr) 2 Si 5 N 8 Eu ²⁺ and Eu ₂ W ₂ O _7.

In addition, the stent design of the present invention is more suitable for fabrication using the high color rendering white LED described below. For example, the illuminating device comprises at least one oxynitride phosphor doped with Mn ²⁺ activator, wherein The encapsulation layer encapsulates the luminescent wafer (ie, illuminating element 6), and the oxynitride phosphor is distributed within the encapsulation layer. The first light emitted by the illuminating wafer excites the oxynitride phosphor to emit a second ray, the first ray may have an illuminating spectrum of 420-490 nm, and the second ray has a half-wave width of 35 nm or more and 50 nm. Hereinafter, an emission spectrum of 518 nm to 528 nm may be emitted, preferably 520 nm. The oxynitride phosphor may be a green phosphor which is a γ-Alon oxynitride phosphor activated by Mn ²⁺ , and the chemical structure of the phosphor is M _a A _b Al _c O _d N _e (M is one or more elements containing at least Mn among Mn, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Tm, and Yb, and A is one of M and Al. The above metal element is represented by a+b+c+d+e=1) in the structural formula. As a Mn ²⁺ activated γ-Alon oxynitride phosphor.

In order to achieve the desired white spectrum, in the illuminating device of the present invention, a red phosphor can be selected to match the γ-Alon oxynitride phosphor. In order to achieve a wider NTSC color gamut, it is preferred to use a fluoride phosphor composed of Mn ⁴⁺ as an activator. The structure of the phosphor may be: MI ₂ (MII _1-h Mn _h )F ₆ . In the above structural formula, M is at least one alkali metal element selected from the group consisting of Li, Na, K, Rb and Cs. MII is at least one tetravalent metal element selected from the group consisting of Ge, Si, Sn, Ti, and Zr. In addition, preferably 0.001 h 0.1. In order to reduce the degradation of the fluoride phosphor to light and heat, MI is preferably K, and MII is preferably Ti or Si, and the concentration of Mn ⁴⁺ is between 0.001 and 0.1. . The particles of the phosphor can be selected to have an average particle diameter of between 18 μm and 41 μm. The red fluoride phosphors specifically used in the present invention can be exemplified as K ₂ SiF ₆ :Mn ⁴⁺ , K ₂ TiF ₆ :Mn ⁴⁺ and K ₂ GeF ₆ :Mn ⁴⁺ ; preferably K ₂ SiF ₆ : Mn ⁴⁺ .

In order to improve the reliability of the illuminating device, in the present invention, the encapsulating layer is selected to have a moisture permeability of 11 g/m ² /24 Hr or less and an oxygen permeability of 400 g/m ² /24 Hr or less; preferably, the moisture permeability is 10.5 g/ The m ² /24Hr or less and the oxygen permeability are 382 g/m ² /24 Hr or less. In the present embodiment, the material of the encapsulating layer may be selected, for example, from phenyl-based silicone or methyl-based silicone. Further, the refractive index of the encapsulating layer is, for example, 1.5 or more; preferably, it is between 1.50 and 1.56.

In the description of this creation, it is to be understood that the terms "center", "longitudinal", "horizontal", "length", "width", "thickness", "upper", "lower", "previous", " The orientation or positional relationship of the indications such as "post", "left", "right", "vertical", "level", "top", "bottom", "inside" and "outside" is based on the orientation shown in the figure or The positional relationship is merely for the purpose of describing the present invention and simplifies the description, and does not indicate or imply that the device or component referred to has a specific orientation, is constructed and operated in a specific orientation, and thus is not to be construed as limiting the present invention.

In the description of the present invention, it is to be understood that the terms "including" and "having", and any variants thereof, are used in the context of the invention, and are intended to cover a non-exclusive inclusion, for example, a process comprising a series of steps or units. The method, system, product, or device is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not explicitly listed or are inherent to such processes, methods, products, or devices.

Unless otherwise expressly stated and limited, the terms "installation", "connected", "connected", "fixed", etc. shall be understood broadly, such as a fixed connection, a detachable connection, or an integral; Directly connected, or indirectly connected through an intermediate medium, can make the internal connection of two components or the interaction of two components. For those skilled in the art, the specific meanings of the above terms in the present creation can be understood on a case-by-case basis. In addition, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying Relative importance or implicit indication of the number of technical features indicated.

Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and are not limited thereto; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that The technical solutions described in the foregoing embodiments may be modified, or some or all of the technical features may be equivalently replaced; and the modifications or substitutions do not deviate from the technical solutions of the embodiments of the present invention. range.

Claims (10)

A package structure comprising: a light-emitting component; a carrier, wherein a recess is formed in the carrier, the light-emitting component is disposed in the recess, and is electrically connected to the electrode on the carrier And an encapsulation layer disposed in the recess and covering the light emitting element, wherein the encapsulation layer is distributed with a quantum dot phosphor material and a non-quantum dot phosphor material, and the quantum A point phosphor material is distributed in an end of the encapsulation layer remote from the light emitting element to isolate the quantum dot phosphor material from the light emitting element. The package structure of claim 1, wherein the encapsulation layer comprises a first encapsulation layer and a second encapsulation layer overlying the first encapsulation layer, wherein the first encapsulation layer is disposed in the a recess and a top surface of the light emitting element and a lead of the light emitting element, wherein the non-quantum dot phosphor material is located in the first encapsulation layer, and the quantum dot phosphor material is located In the second encapsulation layer, or both the quantum dot phosphor material and the non-quantum dot phosphor material are located in the second encapsulation layer. The package structure of claim 1, wherein the encapsulation layer comprises an isolation layer, an encapsulation layer and a protective layer, wherein the quantum dot phosphor material and the non-quantum dot The light body material is located in the encapsulant layer, the isolation layer is disposed in the groove and covers the light emitting element, the encapsulant layer covers the isolation layer, and the protective layer covers the package On the glue layer. The package structure according to claim 3, wherein the isolation layer is resistant to vulcanization a film layer made of a material; the protective layer is a protective layer made of a silicone resin. The package structure according to claim 3, wherein the isolation layer is an isolation layer made of white glue, and a top surface of the isolation layer is lower than or flush with a top surface of the light-emitting element. The package structure according to any one of claims 1 to 5, wherein the quantum dot phosphor material and the lead of the light emitting element are separated by the encapsulation layer. The package structure according to any one of claims 1 to 5, wherein the light-emitting element comprises a first light-emitting chip and a second light-emitting chip, wherein a band of the first light-emitting chip and the second The wavelength bands of the light-emitting chips are different. The package structure according to claim 7, wherein one of the first light-emitting wafer and the second light-emitting chip has a wavelength band of 445 to 447.5 nm and the other wavelength band is 452.5 to 455 nm. The package structure according to any one of the preceding claims, wherein the carrier comprises: a housing, the housing comprises a light emitting surface, a backlight surface and a bottom surface, and the light emitting surface is The backlight surface is oppositely disposed, the bottom surface is disposed between the light emitting surface and the backlight surface, the groove is formed on the light emitting surface; and a conductive bracket, the conductive bracket is the shell The body is partially covered, and the conductive support comprises a first pin and a second pin separated from each other, the first pin and the second pin each comprise an electrode portion and a bent portion The electrode portion is exposed from the housing through the recess, and the bent portion extends outward from the electrode portion to outside the housing and is bent toward the bottom surface of the housing; Wherein one of the first pin and the second pin further comprises a heat dissipating portion extending outward from the electrode portion and exposed from the backlight surface of the housing . A light-emitting device, comprising: the package structure according to any one of claim 1 to claim 5; a substrate comprising a surface and a plurality of pads disposed on the surface, wherein a package structure is disposed on the surface, and a bottom surface of the package structure faces the surface, the package structure is electrically connected to the pad; and a heat sink is disposed on the surface, And connecting the heat dissipation portion on the package structure.