TWM573082U - Compression head - Google Patents
Compression head Download PDFInfo
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- TWM573082U TWM573082U TW107211960U TW107211960U TWM573082U TW M573082 U TWM573082 U TW M573082U TW 107211960 U TW107211960 U TW 107211960U TW 107211960 U TW107211960 U TW 107211960U TW M573082 U TWM573082 U TW M573082U
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- press
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- fit
- head
- bonding
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
Abstract
一種壓合頭用以壓合二電子元件(如一晶片及一電路基板),該壓合頭具有一壓合基座及一導電壓合片,該導電壓合片結合於該壓合基座,該導電壓合片具有導電功效,該導電壓合片用以觸壓一電子元件,且該導電壓合片用以傳導靜電,以避免靜電影響該電子元件的電子性能。A pressing head for pressing two electronic components (such as a chip and a circuit substrate), the pressing head has a pressing base and a conductive voltage piece, and the voltage guiding piece is coupled to the pressing base. The conductive voltage splicing sheet has a conductive effect, and the conductive voltage splicing sheet is used to touch an electronic component, and the conductive voltage splicing sheet is used to conduct static electricity to prevent static electricity from affecting the electronic performance of the electronic component.
Description
本創作是關於一種壓合頭,其用以在該壓合頭接觸或觸壓電子元件時,能夠傳導靜電,以避免靜電影響電子元件的電子性能,尤其是運用於半導體觸壓結合製程時,可避免靜電影響積體電路的電子性能。The present invention relates to a press-fit head capable of conducting static electricity when the press head contacts or touches an electronic component to prevent static electricity from affecting the electronic properties of the electronic component, especially when used in a semiconductor touch-pressure bonding process. It can avoid the influence of static electricity on the electronic performance of the integrated circuit.
在製造、生產、組裝、測試、存放、搬運電子元件等的過程中,靜電會累積在設備之中,甚至在電子元件本身也會累積靜電,當該設備與該電子元件相互接觸時,產生了一放電路徑,使得電子元件或設備遭到靜電放電的影響而損壞。During the manufacture, production, assembly, testing, storage, handling of electronic components, etc., static electricity accumulates in the device, and even the electronic components themselves accumulate static electricity. When the device and the electronic components come into contact with each other, A discharge path causes the electronic component or device to be damaged by electrostatic discharge.
一種習知的壓合頭用以壓合一晶片於一電路基板,然而當該壓合頭接觸該晶片或壓合該晶片及該電路基板時,會發生靜電放電(Electrostatic Discharge, ESD)而導致該晶片損壞,因而影響該晶片的電子性能。A conventional pressure bonding head is used for pressing a wafer on a circuit substrate. However, when the bonding head contacts the wafer or presses the wafer and the circuit substrate, electrostatic discharge (ESD) occurs. The wafer is damaged, thus affecting the electronic properties of the wafer.
本發明的一種壓合頭,其主要目的用以避免發生靜電放電(Electrostatic Discharge, ESD)而導致電子元件損壞,因而影響該電子元件的電子性能。A compression head of the present invention whose main purpose is to avoid electrostatic discharge (ESD) and cause damage to electronic components, thereby affecting the electronic properties of the electronic components.
本創作之一種壓合頭,其包含一壓合基座及一導電壓合片,該導電壓合片結合於該壓合基座,且該導電壓合片可選擇性的拆離該壓合基座,該導電壓合片具有導電性,且該導電壓合片由非單一金屬材料製成,該導電壓合片包含一結合面及一壓合面,該結合面朝向於該壓合基座的一承載面,且顯露出該壓合面。A compression head of the present invention comprises a press-fit base and a voltage-conducting splicing plate, the voltage-conducting splicing plate is coupled to the embossing pedestal, and the voltage-conducting splicing plate is selectively detachable from the pressing The susceptor is electrically conductive, and the galvanic sheet is made of a non-single metal material. The galvanic sheet comprises a bonding surface and a pressing surface, and the bonding surface faces the nip. A bearing surface of the seat, and the pressing surface is exposed.
當該導電壓合片以該壓合面接觸該電子元件(如晶片)或壓合二電子元件(如一晶片及一電路基板)時,該導電壓合片能夠將靜電傳導至該電子元件外部,以避免靜電損壞該電子元件而影響該電子元件的電子性能。When the voltage guiding tab contacts the electronic component (such as a wafer) or the two electronic components (such as a wafer and a circuit substrate) with the pressing surface, the voltage guiding sheet can conduct static electricity to the outside of the electronic component. To avoid electrostatic damage to the electronic component and affect the electronic performance of the electronic component.
請參閱第1至3圖,其為本創作的一種壓合頭100,該壓合頭100能被裝設於一自動化壓接機台或一手持握把(圖未繪出),該壓合頭100用以壓接二電子元件(如晶片及電路基板),第1至3圖所揭露的該壓合頭100形狀為本創作的一實施例,本創作的該壓合頭100不以第1至3圖所揭露的形狀為限制。Please refer to Figures 1 to 3, which is a compression head 100 of the present invention, which can be mounted on an automatic crimping machine or a hand held grip (not shown). The head 100 is used for crimping two electronic components (such as a chip and a circuit substrate). The shape of the press head 100 disclosed in FIGS. 1 to 3 is an embodiment of the creation. The pressure head 100 of the present invention is not The shape disclosed in Figures 1 to 3 is a limitation.
請參閱第1至3圖,該壓合頭100包含一壓合基座110及一導電壓合片120,該導電壓合片120結合於該壓合基座110,且該導電壓合片120可選擇性的拆離該壓合基座110,當該導電壓合片120損壞時可將該導電壓合片120拆離該壓合基座110,並更換另一導電壓合片120,該壓合頭100以該壓合基座110設置於該自動化壓接機台或該手持握把(圖未繪出),該導電壓合片120用以接觸該電子元件(如晶片),該導電壓合片120具有導電性,且該導電壓合片120由非單一金屬材料製成,在本實施例中,該導電壓合片120包含複數個導電顆粒(圖未繪出)及一基材(圖未繪出),該些導電顆粒相互連接而形成一導電通路,該些導電顆粒被包埋於該基材中,該些導電顆粒的材料選自於碳化鈦(TiC),該基材的材料選自於立方晶氮化硼(CBN),且藉由該導電壓合片120具有塑性,因此可避免該導電壓合片120觸壓該電子元件(如晶片)時,造成該電子元件(如晶片)損壞。Referring to FIGS. 1 to 3 , the pressure bonding head 100 includes a pressing base 110 and a voltage guiding tab 120. The voltage guiding tab 120 is coupled to the pressing base 110, and the voltage guiding tab 120 is coupled. The pressure-conducting susceptor 120 can be detached from the pedestal pedestal 110 and the other voltage-conducting susceptor 120 can be replaced. The pressing head 100 is disposed on the automatic crimping machine or the hand held gripper (not shown) for contacting the electronic component (such as a wafer). The voltage splicing plate 120 is electrically conductive, and the conductive voltage splicing plate 120 is made of a non-single metal material. In the embodiment, the conductive voltage splicing chip 120 includes a plurality of conductive particles (not shown) and a substrate. (not shown), the conductive particles are connected to each other to form a conductive path, and the conductive particles are embedded in the substrate, and the conductive particles are selected from titanium carbide (TiC), the substrate The material is selected from cubic boron nitride (CBN), and the conductive voltage plate 120 has plasticity, so that the voltage-conducting plate 120 can be prevented from being pressed. Electronic components (e.g., wafer), causing the electronic component (e.g., wafer) is damaged.
請參閱第1至4圖,該導電壓合片120包含一結合面121及一壓合面122,該壓合基座110具有一承載面111,該壓合面122用以接觸該電子元件(如晶片),該結合面121朝向於該壓合基座110的該承載面111,在本實施例中,該導電壓合片120的該結合面121接觸該承載面111,並顯露出該壓合面122,較佳地,該壓合基座110具有一擋牆112,該擋牆112繞設於該承載面111周邊,該導電壓合片120被限位於該擋牆112,以避免該導電壓合片120偏移該承載面111或脫離該壓合基座110。Referring to FIGS. 1 to 4 , the voltage guiding tab 120 includes a bonding surface 121 and a pressing surface 122 . The pressing base 110 has a bearing surface 111 for contacting the electronic component ( For example, the bonding surface 121 faces the bearing surface 111 of the pressing base 110. In this embodiment, the bonding surface 121 of the voltage guiding tab 120 contacts the bearing surface 111 and reveals the pressure. The pressure-receiving base 110 has a retaining wall 112. The retaining wall 112 is disposed around the bearing surface 111. The voltage-conducting plate 120 is limited to the retaining wall 112 to avoid the The voltage guiding tab 120 is offset from the bearing surface 111 or is detached from the pressing base 110.
請參閱第1至4圖,在本實施例中,部分的該些導電顆粒顯露於該壓合面122,顯露於該壓合面122的該些導電顆粒用以接觸該電子元件(如晶片),由該些相互連接的導電顆粒所形成的該導電通路用以將靜電導引出該電子元件(如晶片)外部。Referring to FIGS. 1 to 4, in the embodiment, a portion of the conductive particles are exposed on the pressing surface 122, and the conductive particles exposed on the pressing surface 122 are used to contact the electronic component (such as a wafer). The conductive path formed by the interconnected conductive particles is used to direct static electricity out of the electronic component (such as a wafer).
請參閱第1至4圖,在本實施例中,部分的該些導電顆粒顯露於該結合面121,顯露於該結合面121的該些導電顆粒接觸該壓合基座110的該承載面111,且該壓合基座110為導電基座,以使該導電壓合片120與該壓合基座110電性連接,由該些導電顆粒相互連接所形成的該導電通路電性連接該壓合基座110。Referring to FIGS. 1 to 4 , in the embodiment, a portion of the conductive particles are exposed on the bonding surface 121 , and the conductive particles exposed on the bonding surface 121 contact the bearing surface 111 of the pressing base 110 . And the pressing base 110 is a conductive base, so that the voltage guiding tab 120 is electrically connected to the pressing base 110, and the conductive path formed by interconnecting the conductive particles is electrically connected to the pressing The base 110 is combined.
請參閱第1至3圖,一靜電導引裝置(如導電線)可選擇性地裝設於該壓合基座110及該導電壓合片120,在不同的實施例中,當該壓合基座110為非導電基座時,該靜電導引裝置(如導電線)裝設於導電壓合片120,並與該些導電顆粒相互連接所形成的該導電通路電性連接。Referring to Figures 1 to 3, an electrostatic guiding device (e.g., a conductive wire) is selectively mountable to the press-fit base 110 and the voltage-conducting tab 120. In various embodiments, when the press-fit is performed When the susceptor 110 is a non-conductive pedestal, the electrostatic guiding device (such as a conductive wire) is mounted on the voltage guiding tab 120 and electrically connected to the conductive path formed by interconnecting the conductive particles.
請參閱第1至5圖,該導電壓合片120具有至少一第一通孔123,該第一通孔123具有一第一開口123a及一第二開口123b,該第一開口123a位於該壓合面122,該第一通孔123為一供氣裝置(圖未繪出)的氣體通道,該第一開口123a用以吸取該電子元件(如晶片),在本實施例中,該第二開口123b位於該結合面121,較佳地,該壓合基座110具有至少一第二通孔113,該第二通孔113的一第三開口113a連通該第一通孔123的該第二開口123b,該第二通孔113用以連接該供氣裝置,該供氣裝置藉由該第一通孔123及該第二通孔113吸取該電子元件(如晶片),以避免在進行壓合製程中,該電子元件(如晶片)發生偏移而無法與另一電子元件(如電路基板)壓合。Referring to FIGS. 1 to 5, the voltage guiding tab 120 has at least one first through hole 123 having a first opening 123a and a second opening 123b. The first opening 123a is located at the pressure. The first through hole 123 is a gas passage of a gas supply device (not shown), and the first opening 123a is for sucking the electronic component (such as a wafer). In this embodiment, the second through hole The opening 123b is located at the bonding surface 121. Preferably, the pressing base 110 has at least one second through hole 113. A third opening 113a of the second through hole 113 communicates with the second opening of the first through hole 123. An opening 123b, the second through hole 113 is configured to connect to the air supply device, and the air supply device absorbs the electronic component (such as a wafer) by the first through hole 123 and the second through hole 113 to avoid pressing During the manufacturing process, the electronic component (such as a wafer) is offset and cannot be pressed against another electronic component such as a circuit substrate.
請參閱第1至5圖,較佳地,該壓合基座110具有至少一容置孔114,該容置孔114用以容置一加熱棒(圖未繪出),該加熱棒用以對該壓合頭100加熱,以對該二電子元件(如晶片及電路基板)進行熱壓合製程。Please refer to the first to fifth embodiments. Preferably, the pressing base 110 has at least one receiving hole 114 for receiving a heating rod (not shown). The press head 100 is heated to perform a thermocompression bonding process on the two electronic components (such as a wafer and a circuit substrate).
請參閱第1、4及5圖,當進行壓合製程時,該壓合頭100以該導電壓合片120接觸該電子元件(如晶片)或以該壓合頭100觸壓該二電子元件(如晶片及電路基板)時,藉由該導電壓合片120將靜電引導至該電子元件(如晶片)外部,以避免靜電影響該電子元件的電子性能。Referring to FIGS. 1, 4 and 5, the crimping head 100 contacts the electronic component (such as a wafer) with the conductive voltage tab 120 or presses the two electronic components with the bonding head 100 when performing a pressing process. (such as a wafer and a circuit substrate), the static electricity is guided to the outside of the electronic component (such as a wafer) by the voltage guiding tab 120 to prevent static electricity from affecting the electronic performance of the electronic component.
本創作之保護範圍當視後附之申請專利範圍所界定者為準,任何熟知此項技藝者,在不脫離本創作之精神和範圍內所作之任何變化與修改,均屬於本創作之保護範圍。The scope of protection of this creation is subject to the definition of the scope of the patent application, and any changes and modifications made by those skilled in the art without departing from the spirit and scope of this creation are within the scope of protection of this creation. .
100‧‧‧壓合頭100‧‧‧ Pressing head
110‧‧‧壓合基座 110‧‧‧Pressing base
111‧‧‧承載面 111‧‧‧ bearing surface
112‧‧‧擋牆 112‧‧‧Retaining wall
113‧‧‧第二通孔 113‧‧‧Second through hole
113a‧‧‧第三開口 113a‧‧‧ third opening
114‧‧‧容置孔 114‧‧‧ accommodating holes
120‧‧‧導電壓合片 120‧‧‧Guide voltage splicing
121‧‧‧結合面 121‧‧‧ joint surface
122‧‧‧壓合面 122‧‧‧ Pressing surface
123‧‧‧第一通孔 123‧‧‧First through hole
123a‧‧‧第一開口 123a‧‧‧first opening
123b‧‧‧第二開口 123b‧‧‧ second opening
第1圖:本創作壓合頭的立體圖。 第2圖:本創作壓合頭的分解立體圖。 第3圖:本創作壓合頭的另一視角的分解立體圖。 第4圖:本創作壓合頭的剖視圖。 第5圖:本創作壓合頭的另一視角的剖視圖。Figure 1: A perspective view of the original compression head. Figure 2: An exploded perspective view of the original compression head. Fig. 3: An exploded perspective view of another perspective of the creation of the compression head. Figure 4: A cross-sectional view of the original compression head. Figure 5: A cross-sectional view of another perspective of the present compression head.
Claims (15)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW107211960U TWM573082U (en) | 2018-08-31 | 2018-08-31 | Compression head |
CN201821507433.6U CN209693131U (en) | 2018-08-31 | 2018-09-14 | pressing head |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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TW107211960U TWM573082U (en) | 2018-08-31 | 2018-08-31 | Compression head |
Publications (1)
Publication Number | Publication Date |
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TWM573082U true TWM573082U (en) | 2019-01-11 |
Family
ID=65805516
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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TW107211960U TWM573082U (en) | 2018-08-31 | 2018-08-31 | Compression head |
Country Status (2)
Country | Link |
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CN (1) | CN209693131U (en) |
TW (1) | TWM573082U (en) |
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2018
- 2018-08-31 TW TW107211960U patent/TWM573082U/en unknown
- 2018-09-14 CN CN201821507433.6U patent/CN209693131U/en active Active
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CN209693131U (en) | 2019-11-26 |
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