TWM571045U - Bare crystal test system - Google Patents

Bare crystal test system

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Publication number
TWM571045U
TWM571045U TWM571045U TW M571045 U TWM571045 U TW M571045U TW M571045 U TWM571045 U TW M571045U
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Taiwan
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test
image
transfer
bare
die
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Chinese (zh)
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Abstract

一種裸晶測試系統用以測試包含基板及銲墊的裸晶的電氣特性。裸晶測試系統包含入料區以及訊號連接於入料區的入料載盤移載台、第一取像裝置、測試移載台、第一移載裝置、測試機及第二取像裝置的控制器。入料區包含可線性位移及轉動的入料載盤移載台以及設置其上的入料載盤。第一取像裝置用以對基板取像。測試移載台可線性位移及轉動。第一移載裝置可位移地設置於入料區以及測試移載台之間用以取置裸晶。測試機具有探針卡並固定於測試移載台的位移路徑上。第二取像裝置用以對銲墊取像。A bare die test system is used to test the electrical characteristics of a die containing a substrate and a pad. The bare crystal test system includes a feed zone and a feed tray transfer station connected to the feed zone, a first image capture device, a test transfer platform, a first transfer device, a test machine, and a second image capture device. Controller. The feed zone includes a linearly displaced and rotating feed tray transfer station and a feed carrier disposed thereon. The first image capturing device is used to take an image of the substrate. The test transfer stage can be linearly displaced and rotated. The first transfer device is displaceably disposed between the loading zone and the test transfer station for accommodating the bare crystal. The test machine has a probe card and is fixed to the displacement path of the test transfer stage. The second image capturing device is used to take an image of the solder pad.

Description

裸晶測試系統Bare crystal test system

本案與電子元件的測試系統有關,特別是關於一種裸晶的測試系統。This case is related to the test system of electronic components, especially regarding a bare crystal test system.

按,隨著IC製造技術的不斷進步,IC製程技術基於閘極長度(線寬)尺寸規格的差異已由數個微米(μm)製程技術、次微米製程技術(<1μm)、深次微米製程技術(<0.25μm)甚至已發展至奈米(nm)製程技術。由此可以見得IC產品之微小及精細。According to the continuous advancement of IC manufacturing technology, IC process technology based on gate length (line width) size specifications has been reduced by several micrometer (μm) process technology, sub-micron process technology (<1μm), deep sub-micron process Technology (<0.25 μm) has even evolved into nanometer (nm) process technology. This can be seen in the small and fine IC products.

而在IC製程中,前段製程包含晶圓處理製程(Wafer Fab)以及裸晶針測(Chip Probing),後段製程則包含封裝(Packaging)及測試製程(Final Test)。在裸晶針測製程中,是在完整的晶圓被切割為裸晶後而未完成封裝前,透過探針卡對每一個裸晶進行允收測試,探針卡透過探針與裸晶形成導電連接以測試其電氣特性,藉以排除不良品進入後續封裝製程,降低封裝成本。In the IC process, the front-end process includes a wafer processing process (Wafer Fab) and a chip probing (Chip Probing), and the latter process includes a packaging process and a final test (Final Test). In the bare crystal needle measurement process, after the complete wafer is cut into bare crystals and the package is not completed, each bare crystal is subjected to acceptance test through the probe card, and the probe card is formed through the probe and the bare crystal. Conductive connections to test their electrical characteristics, in order to eliminate defective products into subsequent packaging processes, reducing packaging costs.

在裸晶針測時,探針卡的探針是直接與裸晶上的銲墊(Pad)接觸進行針測。而由於裸晶上的銲墊需求量越來越多,且密度越來越高,如此導致裸晶上的銲墊尺寸越來越小。也就是說,探針卡的探針之針尖與銲墊之間的對準度也跟隨提升,在探針的針尖與銲墊之間的偏移量超出預期時就會發生探針與銲墊無法對準而針測失效的狀況。舉例來說,目前的裸晶上的銲墊邊長尺寸可以小至40μm,而探針的針尖尺寸則可以小至15~20μm。由此可知,只要探針的針尖偏移量超過1/2的銲墊邊長尺寸就會無法接觸到裸晶而無法完成針測。因此,本申請提供一種可以確保裸晶針測準度的裸晶測試系統。In the bare crystal needle test, the probe of the probe card is directly in contact with the pad (Pad) on the bare die for needle measurement. Due to the increasing demand for solder pads on the bare crystals and the increasing density, the size of the pads on the bare crystals is getting smaller and smaller. That is to say, the alignment between the probe tip of the probe card and the pad also increases, and the probe and the pad occur when the offset between the probe tip and the pad exceeds the expected value. It is impossible to align and the condition of the failure is measured. For example, the current die pad size on the bare die can be as small as 40μm, while the probe tip size can be as small as 15~20μm. It can be seen that as long as the tip offset of the probe exceeds 1/2 of the length of the pad, the bare die cannot be touched and the needle test cannot be completed. Accordingly, the present application provides a bare crystal test system that ensures the accuracy of bare crystal needles.

本案提供一種裸晶測試系統,用以測試裸晶,裸晶包含基板及銲墊,銲墊位於基板上。裸晶測試系統包含入料區、第一取像裝置、測試移載台、第一移載裝置、測試機、第二取像裝置以及控制器。入料區包含入料載盤移載台及入料載盤。入料載盤移載台具有入料線性調整單元以及入料角度調整單元。入料線性調整單元可沿相互垂直的X方向及Y方向位移,入料角度調整單元可轉動。入料載盤設置於入料載盤移載台上,用以承載裸晶。第一取像裝置相鄰入料載盤設置以對該裸晶的該基板取像。測試移載台相鄰入料區設置,測試移載台具有測試基座、測試線性調整單元、測試角度調整單元以及載座,測試基座可沿Y方向位移,測試線性調整單元設置於測試基座上並可沿X方向及Z方向位移,X方向、Y方向及Z方向相互垂直,測試角度調整單元連接測試線性調整單元,載座可沿Z方向位移地設置於測試線性調整單元上。第一移載裝置可位移地設置於入料區以及測試移載台之間用以取置裸晶。測試機具有探針卡,測試機固定於測試移載台的位移路徑上。第二取像裝置可位移地設置於測試移載台與測試機之間以對裸晶的銲墊取像。控制器訊號連接於入料載盤移載台、第一取像裝置、測試移載台、第一移載裝置、測試機以及第二取像裝置。The present invention provides a bare crystal test system for testing bare crystals, bare crystals comprising substrates and pads, and pads on the substrate. The bare die test system includes a feed zone, a first image capture device, a test transfer station, a first transfer device, a test machine, a second image capture device, and a controller. The feeding area includes a loading tray transfer station and a loading tray. The feed tray transfer stage has a feed linear adjustment unit and a feed angle adjustment unit. The feeding linear adjustment unit can be displaced along the mutually perpendicular X direction and the Y direction, and the feeding angle adjusting unit can be rotated. The feed carrier is disposed on the loading tray transfer platform for carrying the bare crystal. The first image capturing device is disposed adjacent to the loading tray to image the substrate of the bare crystal. The test transfer table is set adjacent to the feeding zone, the test transfer stage has a test base, a test linear adjustment unit, a test angle adjustment unit and a carrier, the test base can be displaced in the Y direction, and the test linear adjustment unit is set on the test base. The seat can be displaced in the X direction and the Z direction, and the X direction, the Y direction and the Z direction are perpendicular to each other. The test angle adjusting unit is connected to the test linear adjusting unit, and the carrier can be displaced along the Z direction to the test linear adjusting unit. The first transfer device is displaceably disposed between the loading zone and the test transfer station for accommodating the bare crystal. The test machine has a probe card that is fixed to the displacement path of the test transfer table. The second image capturing device is displaceably disposed between the test transfer station and the testing machine to image the bare pad. The controller signal is connected to the loading tray transfer stage, the first image taking device, the test transfer station, the first transfer device, the test machine, and the second image capturing device.

藉此,裸晶測試系統得以透過兩次取像確保探針卡的針尖位置對準銲墊的位置,確保針測工作的進行。In this way, the bare crystal test system can ensure that the needle position of the probe card is aligned with the position of the pad through two image taking operations to ensure the needle test work.

請配合參閱圖1,圖1為本新型裸晶測試系統之一實施例的架構模塊圖。用以配合具有探針卡的測試機50對裸晶進行電氣特性檢測,並達到良品或不良品的分選。Please refer to FIG. 1 together. FIG. 1 is a structural block diagram of an embodiment of a new bare die test system. It is used to test the electrical characteristics of the bare crystal with the test machine 50 having the probe card, and achieve sorting of good or defective products.

配合參閱圖2及圖3,裸晶D(Bare die)為半導體元件歷經晶圓階段(Wafer)製程後,逐一分割,於未進入封裝階段(Package)製程前之狀態。每一裸晶D包含基板D1及銲墊D2,銲墊D2位於基板D1上用以與外界設備電連接。於此,基板D1具有第一外輪廓D11,銲墊D2具有第二外輪廓D21,第二外輪廓D21的面積小於第一外輪廓D11的面積。更具體地,基板D1的第一外輪廓D11可以是邊長10mm的方形輪廓,而第二外輪廓D21可以是邊長40μm的方形輪廓,但不以此為限。Referring to FIG. 2 and FIG. 3, the bare die D (Bare die) is divided into one by one after the wafer stage (Wafer) process, and is not in the state before the package process. Each die D includes a substrate D1 and a pad D2, and the pad D2 is located on the substrate D1 for electrical connection with an external device. Here, the substrate D1 has a first outer contour D11, and the pad D2 has a second outer contour D21, and the area of the second outer contour D21 is smaller than the area of the first outer contour D11. More specifically, the first outer contour D11 of the substrate D1 may be a square contour with a side length of 10 mm, and the second outer contour D21 may be a square contour with a side length of 40 μm, but not limited thereto.

於此所述之裸晶測試系統可以是由人工完成入料及出料的動作;也可以是全自動化地透過自動化機械完成入料及出料的動作。The bare crystal test system described herein may be an action of manually loading and discharging, or a fully automated operation of feeding and discharging through an automated machine.

圖1繪示之裸晶測試系統係可實現全自動化控制入料及出料動作的裸晶測試系統之一實施例。圖1繪示之裸晶測試系統包含控制器C、入料區10、第一取像裝置20、測試移載台30、第一移載裝置40、測試機50、第二取像裝置60、第二移載裝置70以及出料載盤分類區80。The die test system illustrated in FIG. 1 is an embodiment of a bare die test system that can achieve fully automated control of the incoming and outgoing actions. 1 shows a bare crystal test system comprising a controller C, a feed zone 10, a first image capture device 20, a test transfer platform 30, a first transfer device 40, a test machine 50, a second image capture device 60, The second transfer device 70 and the discharge tray sorting area 80.

參閱圖1,控制器C可以是工業電腦。控制器C訊號連接至第一取像裝置20、測試移載台30、第一移載裝置40、測試機50、第二取像裝置60以及第二移載裝置70,以控制第一取像裝置20、測試移載台30、第一移載裝置40、測試機50、第二取像裝置60以及第二移載裝置70之運作。參閱圖1並配合參閱圖2至圖4,入料區10包含入料載盤移載台11及入料載盤12,入料載盤移載台11與控制器C訊號連接,入料載盤移載台11承載入料載盤12,入料載盤12承載裸晶D。在入料區10中,第一取像裝置20用以擷取入料載盤移載台11上的入料載盤12內之裸晶D的基板D1之外觀影像,並且,入料載盤移載台11據此校正裸晶D的基板D1之外觀位置。裸晶D的基板D1之外觀位置校正後由第一移載裝置40移載至測試移載台30,測試移載台30將裸晶D送入測試機50並帶動裸晶D使銲墊D2接觸探針卡51進行測試。而在測試移載台30將裸晶D送入測試機50進行測試前,第二取像裝置60擷取測試移載台30上的裸晶D的銲墊D2影像,於此,測試移載台30據此校正裸晶D位置,使裸晶D的銲墊D2位於適於進行測試的位置。Referring to Figure 1, controller C can be an industrial computer. The controller C signal is connected to the first image capturing device 20, the test transfer station 30, the first transfer device 40, the testing machine 50, the second image capturing device 60, and the second transfer device 70 to control the first image capturing device. The operation of the device 20, the test transfer station 30, the first transfer device 40, the test machine 50, the second image capture device 60, and the second transfer device 70. Referring to FIG. 1 and referring to FIG. 2 to FIG. 4, the feeding area 10 includes a loading tray transfer stage 11 and a loading tray 12, and the loading tray transfer stage 11 is connected with the controller C signal. The tray transfer stage 11 carries the loading tray 12, and the loading tray 12 carries the die D. In the feeding zone 10, the first image capturing device 20 is configured to capture an image of the substrate D1 of the die D in the loading tray 12 on the loading tray transfer table 11, and the loading tray The transfer stage 11 accordingly corrects the appearance position of the substrate D1 of the bare crystal D. The position of the substrate D1 of the die D is corrected and transferred by the first transfer device 40 to the test transfer station 30. The test transfer table 30 feeds the die D into the test machine 50 and drives the die D to make the pad D2. The probe card 51 is contacted for testing. Before the test transfer station 30 sends the die D to the test machine 50 for testing, the second image capture device 60 captures the image of the pad D2 of the die D on the test transfer station 30. Here, the test transfer is performed. The stage 30 corrects the position of the die D accordingly, so that the pad D2 of the die D is located at a position suitable for testing.

藉此,裸晶D在測試前先經過基板D1的外輪廓位置校正,接著再經過銲墊D2的位置校正,確保探針卡51得以接觸裸晶D的正確測試位置,確保測試工作得以被順利進行。且裸晶D的位置校正由搭載裸晶D的入料載盤移載台11及測試移載台30位移來達成,在裸晶D進行測試前的校正工作不會直接接觸到裸晶D,而能避免裸晶D的損壞,提高產品良率。Thereby, the bare crystal D is corrected by the outer contour position of the substrate D1 before the test, and then the position correction of the solder pad D2 is performed to ensure that the probe card 51 can contact the correct test position of the bare crystal D, thereby ensuring that the test work is smoothly performed. get on. And the position correction of the bare crystal D is achieved by the displacement of the loading tray transfer stage 11 and the test transfer stage 30 equipped with the bare crystal D, and the calibration work before the test of the bare crystal D does not directly contact the bare crystal D, It can avoid the damage of the bare crystal D and improve the product yield.

請配合參閱圖5並配合圖6,圖5為裸晶測試系統之一實施例的配置圖。而圖5裸晶測試系統之位置配置僅是其中一實施例的示意說明,整體配置並不以此為限。於一實施例中,入料載盤移載台11具有入料基座111、入料線性調整單元112、入料角度調整單元113以及結合單元114。於此,入料線性調整單元112設置於入料基座111,入料角度調整單元113設置於入料線性調整單元112,結合單元114設置於入料角度調整單元113,而入料載盤12結合於結合單元114,藉以使入料載盤12固定於入料載盤移載台11上。進一步地,入料線性調整單元112可沿相互垂直的X方向及Y方向位移,入料角度調整單元113可於X方向及Y方向構成的平面上轉動,而結合單元114是可分離地與入料載盤12結合。具體地,入料線性調整單元112可以是透過線性滑軌與線性滑塊的組合來導引,但不以此為限。而入料角度調整單元113可以透過旋轉馬達或皮帶及皮帶輪的配合來驅動,但不以此為限。結合單元114可以是夾爪,但不以此為限。Please refer to FIG. 5 in conjunction with FIG. 6. FIG. 5 is a configuration diagram of an embodiment of a bare die test system. The positional configuration of the bare die test system of FIG. 5 is only a schematic illustration of one of the embodiments, and the overall configuration is not limited thereto. In one embodiment, the feed tray transfer stage 11 has a feed base 111, a feed linear adjustment unit 112, a feed angle adjustment unit 113, and a coupling unit 114. Here, the feed linear adjustment unit 112 is disposed on the feed base 111, the feed angle adjustment unit 113 is disposed in the feed linear adjustment unit 112, the joint unit 114 is disposed in the feed angle adjustment unit 113, and the feed tray 12 The binding unit 114 is coupled to the loading tray 12 to be fixed to the loading tray transfer stage 11. Further, the feeding linearity adjusting unit 112 is displaceable in mutually perpendicular X and Y directions, and the feeding angle adjusting unit 113 is rotatable on a plane formed by the X direction and the Y direction, and the combining unit 114 is detachably engaged The material carrier tray 12 is combined. Specifically, the feed linear adjustment unit 112 may be guided by a combination of a linear slide and a linear slider, but is not limited thereto. The feeding angle adjusting unit 113 can be driven by a rotation motor or a combination of a belt and a pulley, but is not limited thereto. The bonding unit 114 can be a jaw, but is not limited thereto.

如此一來,當入料載盤移載台11的入料線性調整單元112沿X方向或Y方向位移,或入料角度調整單元113轉動時,結合於入料載盤移載台11上的入料載盤12即同步改變線性位置或角度,而位於入料載盤12內的裸晶D也隨之改變位置或角度。In this way, when the feed linear adjustment unit 112 of the feed tray transfer stage 11 is displaced in the X direction or the Y direction, or the feed angle adjustment unit 113 is rotated, it is coupled to the feed tray transfer stage 11. The feed tray 12 changes the linear position or angle simultaneously, and the die D located in the feed carrier 12 also changes position or angle.

於一實施例中,入料載盤12可以是用以容置一個一個已被分離的裸晶D或是被切割後仍黏貼於俗稱藍膜(Blue Tape)的軟性薄膜上的裸晶D。在入料載盤12容置一個一個被分離的裸晶D時,入料載盤12為具有複數凹槽的盤體,各凹槽以矩陣形式排列,每一個凹槽的內周輪廓對應每一裸晶D的第一外輪廓D11,藉此使每一個凹槽對應容置一個裸晶D。而黏貼於藍膜上的裸晶D更可以被置於鋼製框架上,透過鋼製框架支撐藍膜,以避免裸晶D間的相互碰撞。由此可知,入料載盤12可以適用於各種入料型態的裸晶D,而具有較高的裸晶D適用性。In one embodiment, the loading tray 12 may be used to accommodate a die D that has been separated or a die D that is still adhered to a soft film commonly known as Blue Tape after being cut. When the loading tray 12 accommodates a separated die D, the loading carrier 12 is a disk having a plurality of grooves, and the grooves are arranged in a matrix, and the inner circumference contour of each groove corresponds to each A first outer contour D11 of a die D, whereby each of the grooves corresponds to a die D. The bare crystal D adhered to the blue film can be placed on a steel frame to support the blue film through the steel frame to avoid collision between the bare crystals D. It can be seen that the loading carrier 12 can be applied to the bare die D of various feed types, and has a higher die D suitability.

於一實施例中,第一取像裝置20可以是CCD(Charge Coupled Device,電荷耦合裝置)鏡頭,但不以此為限。第一取像裝置20設置於可以拍攝到裸晶D進行測試前的任何位置。於此實施例中,第一取像裝置20設置於鄰近入料載盤移載台11的位置用以拍攝裸晶D,更具體地,第一取像裝置20是設置在可以拍攝入料載盤移載台11上的入料載盤12內的裸晶D的第一外輪廓D11的位置。In an embodiment, the first image capturing device 20 may be a CCD (Charge Coupled Device) lens, but is not limited thereto. The first image capturing device 20 is disposed at any position before the bare crystal D can be photographed for testing. In this embodiment, the first image capturing device 20 is disposed at a position adjacent to the loading tray transfer stage 11 for capturing the bare crystal D. More specifically, the first image capturing device 20 is disposed at the image capturing load. The position of the first outer contour D11 of the bare metal D in the feed carrier 12 on the disk transfer stage 11 is transferred.

於一實施例中,控制器C內可以預存初定位基礎影像。第一取像裝置20拍攝入料載盤12內其中一個裸晶D的第一外輪廓D11之影像(裸晶D的第一外輪廓D11之影像下稱第一外輪廓影像),而控制器C比對初定位基礎影像並控制入料載盤移載台11進行位置補償,使入料載盤移載台11上的裸晶D之第一外輪廓影像與初定位基礎影像相符。具體地,入料載盤移載台11是透過入料線性調整單元112及入料角度調整單元113調整入料載盤12的位置,使入料載盤12內的裸晶D之第一外輪廓D11位置與初定位基礎影像一致。In an embodiment, the initial positioning base image can be pre-stored in the controller C. The first image capturing device 20 captures an image of the first outer contour D11 of one of the bare crystals D in the loading tray 12 (the image of the first outer contour D11 of the bare crystal D is referred to as a first outer contour image), and the controller The C coordinates the initial positioning of the base image and controls the loading tray transfer stage 11 to perform position compensation so that the first outer contour image of the bare crystal D on the loading tray transfer stage 11 matches the initial positioning base image. Specifically, the loading tray transfer stage 11 adjusts the position of the loading tray 12 through the material feeding linear adjustment unit 112 and the feeding angle adjusting unit 113, so that the bare crystal D in the loading carrier 12 is the first one. The position of the contour D11 is identical to the initial positioning base image.

值得說明的是,初定位基礎影像是預設裸晶D在進行第二次取像前應相符之外觀標準影像,也就是說,初定位基礎影像中的裸晶D之第一外輪廓D11位於第二取像裝置60的取像範圍內。It is worth noting that the initial positioning base image is the appearance standard image that the preset bare crystal D should conform to before the second image capturing, that is, the first outer contour D11 of the bare crystal D in the initial positioning basic image is located. The image capturing range of the second image capturing device 60 is within the image capturing range.

繼續參閱圖5並配合圖7,於一實施例中,測試移載台30可位移地設置於入料區10的一側,用以承接入料區10的裸晶D並能將裸晶D送至測試機50進行測試。進一步地,測試移載台30具有測試基座31、測試線性調整單元32、測試角度調整單元33以及載座34。於此,測試基座31可沿Y方向位移,測試線性調整單元32設置於測試基座31,測試角度調整單元33連接測試線性調整單元32並能帶動測試線性調整單元32轉動,載座34設置於測試線性調整單元32並用以承載裸晶D。進一步地,測試線性調整單元32可沿相互垂直的X方向及Z方向位移,測試角度調整單元33可於X方向及Y方向構成的平面上轉動。載座34可以包含具有頂出功能的吸取裝置,以真空吸引的方式定位裸晶D,並能以頂出機構頂出裸晶D,但不以此為限。Continuing to refer to FIG. 5 and in conjunction with FIG. 7, in an embodiment, the test transfer stage 30 is displaceably disposed on one side of the loading zone 10 for receiving the die D of the material zone 10 and capable of squeezing the die D. It is sent to the test machine 50 for testing. Further, the test transfer stage 30 has a test base 31, a test linear adjustment unit 32, a test angle adjustment unit 33, and a carrier 34. Here, the test base 31 can be displaced in the Y direction, the test linear adjustment unit 32 is disposed on the test base 31, the test angle adjustment unit 33 is connected to the test linear adjustment unit 32 and can drive the test linear adjustment unit 32 to rotate, and the carrier 34 is set. The linear adjustment unit 32 is tested and used to carry the die D. Further, the test linear adjustment unit 32 is displaceable in mutually perpendicular X and Z directions, and the test angle adjustment unit 33 is rotatable on a plane formed by the X direction and the Y direction. The carrier 34 may include a suction device having an ejection function, and the die D is positioned in a vacuum suction manner, and the die D can be ejected by the ejection mechanism, but not limited thereto.

於一實施例中,請配合參閱圖8及圖9,圖8為單一組測試移載台30與測試機50之一實施例的局部立體結構圖。測試移載台30可沿Y方向位移進出測試機50。圖9為單一組測試移載台30之一實施例的結構剖視圖。In an embodiment, please refer to FIG. 8 and FIG. 9. FIG. 8 is a partial perspective structural view of an embodiment of a single set of test transfer table 30 and test machine 50. The test transfer stage 30 can be displaced into and out of the test machine 50 in the Y direction. 9 is a cross-sectional view of the structure of one embodiment of a single set of test transfer stations 30.

於此,測試線性調整單元32包含載板321、轉座322以及Z方向位移組件323。載板321可沿X方向位移地設置於測試基座31上。轉座322可轉動地結合於載板321。Z方向位移組件323設置於轉座322內。而測試角度調整單元33則與轉座322連接而能帶動轉座322轉動。Here, the test linear adjustment unit 32 includes a carrier plate 321, a swivel 322, and a Z-direction displacement assembly 323. The carrier 321 is movably disposed on the test pedestal 31 in the X direction. The swivel 322 is rotatably coupled to the carrier 321 . The Z-direction displacement assembly 323 is disposed within the swivel 322. The test angle adjusting unit 33 is connected to the rotating base 322 to drive the rotating base 322 to rotate.

進一步地,於一實施例中,請參閱圖9,Z方向位移組件323包含第一導引件3231及第二導引件3232。第一導引件3231及第二導引3232件均為梯形塊體,第一導引件3231可沿X方向位移地設置於轉座322內,第一導引件3231以相平行的兩平面之其中一平面貼抵於轉座322並能沿X方向滑移。第二導引件3232以相對於斜面的平面貼抵於載座34,且第二導引件3232的斜面相對於第一導引件3231的斜面並能相對移動。進一步地,第一導引件3231與轉座322之間可以但不限於設置線性滑軌與滑塊,而第二導引件3232的斜面與第一導引件3231的斜面之間也可以設置線性滑軌與滑塊。Further, in an embodiment, referring to FIG. 9 , the Z-direction displacement assembly 323 includes a first guiding member 3231 and a second guiding member 3232 . The first guiding member 3231 and the second guiding member 3232 are all trapezoidal blocks, and the first guiding member 3231 is displaceably disposed in the rotating base 322 in the X direction, and the first guiding member 3231 is in two parallel planes. One of the planes abuts against the swivel 322 and can slide in the X direction. The second guiding member 3232 abuts against the carrier 34 in a plane with respect to the inclined surface, and the inclined surface of the second guiding member 3232 is relatively movable with respect to the inclined surface of the first guiding member 3231. Further, between the first guiding member 3231 and the rotating base 322, the linear sliding rail and the slider may be disposed, but the inclined surface of the second guiding member 3232 and the inclined surface of the first guiding member 3231 may also be disposed. Linear slides and sliders.

除此之外,進一步地參閱圖10並配合參閱圖11,載座34係可沿Z方向位移地結合於第二導引件3232。具體地,於一實施例中,轉座322上固定結合滑軌,而載座34則可以透過側板B結合滑塊再穿套於轉座322上的滑軌,藉此限制載座34僅能沿Z方向位移。In addition, referring further to FIG. 10 and with reference to FIG. 11, the carrier 34 is movably coupled to the second guide member 3232 in the Z direction. Specifically, in an embodiment, the rotating base 322 is fixedly coupled with the sliding rail, and the carrier 34 can be coupled to the sliding rail of the rotating base 322 through the side plate B, thereby limiting the carrier 34. Displace in the Z direction.

基於此,當第一導引件3231被帶動於X方向位移時,第二導引件3232將被帶動而改變其相對第一導引件3231的位置。於此,由於第二導引件3232結合於載座34,且載座34被受限於沿Z方向位移,如此一來,第二導引件3232便能帶動載座34改變於Z方向的位置。具體地,在本實施例中,可以透過設置氣/液壓缸帶動第一導引件3231於X方向上的位移。且值得說明的是,於此實施例中基於第一導引件3231及第二導引件3232的配置,而能透過沿著X方向延伸置放的驅動源(例如氣/液壓缸)帶動載座34改變Z方向上的位置。帶動載座34改變Z方向上位置的驅動源不侷限於沿Z方向延伸或設置,而能減少整體系統在Z方向上的空間占據,達到小型化之目的。Based on this, when the first guiding member 3231 is displaced in the X direction, the second guiding member 3232 will be driven to change its position relative to the first guiding member 3231. Here, since the second guiding member 3232 is coupled to the carrier 34, and the carrier 34 is limited to be displaced in the Z direction, the second guiding member 3232 can drive the carrier 34 to change in the Z direction. position. Specifically, in the embodiment, the displacement of the first guiding member 3231 in the X direction can be driven by the air/hydraulic cylinder. It should be noted that, in this embodiment, based on the arrangement of the first guiding member 3231 and the second guiding member 3232, the driving source (such as a gas/hydraulic cylinder) extending along the X direction can be used to drive the carrier. Seat 34 changes position in the Z direction. The driving source for driving the carrier 34 to change the position in the Z direction is not limited to being extended or arranged in the Z direction, and the space occupation of the entire system in the Z direction can be reduced, achieving miniaturization.

此外,圖10繪示測試移載台30中測試角度調整單元33的一具體實施例。測試角度調整單元33包含線性帶動裝置331、第一皮帶332、第二皮帶333及導引弧塊334。線性帶動裝置331沿X方向位移並透過第一皮帶332與第二皮帶333帶動導引弧塊334轉動。In addition, FIG. 10 illustrates a specific embodiment of the test angle adjusting unit 33 in the test transfer stage 30. The test angle adjusting unit 33 includes a linear driving device 331, a first belt 332, a second belt 333, and a guiding arc 334. The linear driving device 331 is displaced in the X direction and drives the guiding arc 334 to rotate through the first belt 332 and the second belt 333.

於此,線性帶動裝置331可以沿著X方向於第一端及第二端之間往復位移。且導引弧塊334具有弧面3341及平面3342,弧面3341與平面3342相對,第一皮帶332與第二皮帶333係貼靠結合於弧面3341,而導引弧塊334的平面3342結合於轉座322。Here, the linear driving device 331 can be reciprocally displaced between the first end and the second end along the X direction. The guiding arc 334 has a curved surface 3341 and a flat surface 3342. The curved surface 3341 is opposite to the flat surface 3342. The first belt 332 and the second belt 333 are abutted against the curved surface 3341, and the plane 3342 of the guiding arc 334 is combined. In the transposition 322.

進一步地參閱圖10,第一皮帶332的兩端分別靠近X方向上相對的第一端及第二端,並分別連接於線性帶動裝置331與導引弧塊334。也就是說,當第一皮帶332的一端連接於線性帶動裝置331靠近第一端之處時,第一皮帶332的另一端便連接於導引弧塊334靠近第二端之處。Referring to FIG. 10, the two ends of the first belt 332 are respectively adjacent to the first end and the second end opposite to each other in the X direction, and are respectively connected to the linear driving device 331 and the guiding arc block 334. That is, when one end of the first belt 332 is connected to the linear driving device 331 near the first end, the other end of the first belt 332 is connected to the guiding arc 334 near the second end.

相同地,第二皮帶333的兩端分別靠近X方向上相對的第一端及第二端,並分別連接於線性帶動裝置331與導引弧塊334。也就是說,當第二皮帶333的一端連接於線性帶動裝置331靠近第一端之處時,第二皮帶333的另一端便連接於導引弧塊334靠近第二端之處。Similarly, the two ends of the second belt 333 are respectively adjacent to the first end and the second end opposite to each other in the X direction, and are respectively connected to the linear driving device 331 and the guiding arc 334. That is, when one end of the second belt 333 is connected to the position where the linear driving device 331 is close to the first end, the other end of the second belt 333 is connected to the position where the guiding arc 334 is close to the second end.

於此,線性帶動裝置333的兩端分別連接第一皮帶332與第二皮帶333的一端,且導引弧塊334的兩端亦分別連接第一皮帶332與第二皮帶333的另一端。第一皮帶332與第二皮帶333交叉並於重疊位置處相穿套以確保第一皮帶332與第二皮帶333可相對位移。Here, the two ends of the first belt 332 and the second belt 333 are respectively connected to the two ends of the linear belt driving device 333, and the two ends of the guiding arc block 334 are also connected to the other ends of the first belt 332 and the second belt 333, respectively. The first belt 332 intersects the second belt 333 and passes through the sleeve at the overlapping position to ensure that the first belt 332 and the second belt 333 are relatively displaceable.

基於此,當線性帶動裝置333於X方向上的第一端及第二端之間往復運動時便能透過第一皮帶332、第二皮帶333配合導引弧塊334帶動轉座322轉動,而當轉座322轉動時也就能同步帶動載座34改變角度位置。於此,線性帶動裝置331可以但不限於氣/液壓缸。Based on this, when the linear driving device 333 reciprocates between the first end and the second end in the X direction, the first belt 332 and the second belt 333 cooperate with the guiding arc 334 to drive the rotating base 322 to rotate. When the swivel 322 is rotated, the carrier 34 can also be driven to change the angular position. Here, the linear driving device 331 can be, but is not limited to, a gas/hydraulic cylinder.

值得說明的是,在此實施例中,導引弧塊334分別透過平面3342貼靠於轉座322,弧面3341貼靠於第一皮帶332及第二皮帶333。平面3342貼靠於轉座322可以大面積地與轉座322靠抵而能確實地帶動轉座322轉動。而第一皮帶332及第二皮帶333貼靠於弧面3341則可以在導引弧塊334轉動時,第一皮帶332及第二皮帶333得以順應導引弧塊334的轉動動作確實地壓靠於導引弧塊334上,確保後續之帶動穩定性。It should be noted that, in this embodiment, the guiding arc block 334 abuts against the rotating seat 322 through the plane 3342, and the curved surface 3341 abuts against the first belt 332 and the second belt 333. The plane 3342 abuts against the swivel 322 to abut against the swivel 322 over a large area to reliably drive the swivel 322 to rotate. When the first belt 332 and the second belt 333 abut against the curved surface 3341, the first belt 332 and the second belt 333 can be reliably pressed against the rotating motion of the guiding arc 334 when the guiding arc 334 rotates. On the guiding arc block 334, the subsequent driving stability is ensured.

進一步地參閱圖5,於一實施例中,第一移載裝置40可位移地設置於入料區10及測試移載台30之間,用以取置入料區10的裸晶D至測試移載台30。於此,第一移載裝置40包含基座及取放頭,取放頭是可轉動地設置於基座,且取放頭是透過真空吸引的方式吸取裸晶D,並在到達定位時以頂出機構頂出裸晶D,唯,此第一移載裝置40的結構組態僅是例示說明,並不以此結構為限。Referring to FIG. 5, in an embodiment, the first transfer device 40 is displaceably disposed between the loading zone 10 and the test transfer platform 30 for taking the die D of the feed zone 10 to test. Transfer station 30. In this case, the first transfer device 40 includes a base and a pick-and-place head. The pick-and-place head is rotatably disposed on the base, and the pick-up head sucks the die D through vacuum suction, and when the positioning is reached, The ejector mechanism ejects the die D. However, the structural configuration of the first transfer device 40 is merely illustrative and is not limited to this structure.

於一實施例中,測試機50上的探針卡51具有對應裸晶D的銲墊D2位置配置之複數接觸件。接觸件可以是懸臂式探針、彈簧針、被設置於薄膜上之打線點或是使用MEMS技術製作之接觸件,本實施例之接觸件為探針,但不以此為限。於此,測試機50固定設置於測試移載台30的位移路徑上,測試移載台30可以位移進入測試機50,測試移載台30再透過Z方向位移組件323將載座34推升至接觸探針卡51的探針,在探針接觸銲墊D2形成電連接後進行電氣特性測試。In one embodiment, the probe card 51 on the test machine 50 has a plurality of contacts corresponding to the position of the pads D2 of the die D. The contact member may be a cantilever probe, a pogo pin, a wire bonding point disposed on the film, or a contact member made by using a MEMS technology. The contact member in this embodiment is a probe, but is not limited thereto. Here, the test machine 50 is fixedly disposed on the displacement path of the test transfer stage 30, and the test transfer stage 30 can be displaced into the test machine 50, and the test transfer stage 30 is further pushed to the carrier 34 by the Z-direction displacement assembly 323. The probe that contacts the probe card 51 is electrically tested after the probe contacts the pad D2 to form an electrical connection.

繼續參閱圖5,於一實施例中,第二取像裝置60設置在測試機50與測試移載台30之間。進一步地,第二取像裝置60可以是CCD(Charge Coupled Device,電荷耦合裝置)鏡頭,但不以此為限。更具體地,第二取像裝置60是設置在可以拍攝測試移載台30上的裸晶D的第二外輪廓D21的位置。於此,由於第一外輪廓D11的面積大於第二外輪廓D21的面積,且第一取像裝置20是擷取裸晶D的基板D1之第一外輪廓D11的影像,而第二取像裝置60是擷取裸晶D的基板D1上之銲墊D2的第二外輪廓D21的影像。因此,第二取像裝置60的放大倍率大於第一取像裝置20的放大倍率。於此,第二取像裝置60可以在測試移載台30移載裸晶D進入測試機50之前對測試移載台30上的裸晶D的第二外輪廓D21進行取像。With continued reference to FIG. 5, in an embodiment, the second image capture device 60 is disposed between the test machine 50 and the test transfer station 30. Further, the second image capturing device 60 may be a CCD (Charge Coupled Device) lens, but is not limited thereto. More specifically, the second image capturing device 60 is disposed at a position where the second outer contour D21 of the bare crystal D on the test transfer stage 30 can be photographed. Here, since the area of the first outer contour D11 is larger than the area of the second outer contour D21, and the first image capturing device 20 is an image capturing the first outer contour D11 of the substrate D1 of the bare crystal D, and the second image capturing The device 60 is an image of the second outer contour D21 of the pad D2 on the substrate D1 of the die D. Therefore, the magnification of the second image capturing device 60 is greater than the magnification of the first image capturing device 20. Here, the second image capturing device 60 can image the second outer contour D21 of the bare crystal D on the test transfer stage 30 before the test transfer stage 30 transfers the die D into the test machine 50.

於一實施例中,控制器C更預存針尖位置座標值,針尖位置座標值為測試機中探針卡的探針位置所對應的座標值。第二取像裝置60拍攝測試移載台30上的裸晶D之第二外輪廓D21之影像(裸晶的第二外輪廓D21之影像下稱第二外輪廓影像),第二取像裝置60拍攝的第二外輪廓影像傳送至控制器C,控制器C依照與針尖位置座標值相同的座標系及座標原點定義出第二外輪廓影像對應的座標值。In an embodiment, the controller C further stores a needle position coordinate value, and the tip position coordinate value is a coordinate value corresponding to the probe position of the probe card in the testing machine. The second image capturing device 60 captures the image of the second outer contour D21 of the bare crystal D on the test transfer station 30 (the image of the second outer contour D21 of the bare crystal is referred to as a second outer contour image), and the second image capturing device The second outer contour image captured by 60 is transmitted to the controller C, and the controller C defines the coordinate value corresponding to the second outer contour image according to the coordinate system and the coordinate origin which are the same as the coordinate value of the needle tip position.

接著,控制器C比對針尖位置座標值與第二外輪廓影像的座標值,並控制測試移載台30進行位置補償,使測試移載台30上的裸晶D之第二外輪廓影像的座標值與針尖位置座標值相符。在第二外輪廓影像的座標值符合針尖位置座標值時,裸晶D的銲墊D2位置即能精準地對應針尖位置。具體地,測試移載台30是透過測試線性調整單元32及測試角度調整單元33調整測試移載台30的位置,使測試移載台30上的裸晶D之第二外輪廓D21位置與精確對位基礎影像一致。Then, the controller C compares the coordinate value of the needle tip position coordinate with the coordinate value of the second outer contour image, and controls the test transfer table 30 to perform position compensation, so as to test the second outer contour image of the bare crystal D on the transfer table 30. The coordinate value matches the coordinate value of the tip position. When the coordinate value of the second outer contour image conforms to the coordinate value of the needle tip position, the position of the pad D2 of the bare crystal D can accurately correspond to the position of the needle tip. Specifically, the test transfer station 30 adjusts the position of the test transfer stage 30 through the test linear adjustment unit 32 and the test angle adjustment unit 33, so that the second outer contour D21 of the bare crystal D on the test transfer stage 30 is positioned and accurately The alignment base image is consistent.

於一實施例中,第二移載裝置70可位移地設置於測試移載台30與測試機50之間,用以取出測試機50內完成測試的裸晶D。於此,第二移載裝置70包含基座及取放頭,取放頭是可轉動地設置於基座,且取放頭是透過真空吸引的方式吸取裸晶D,並在到達定位時以頂出機構頂出裸晶D,唯,此第二移載裝置70的結構組態僅是例示說明,並不以此結構為限。In one embodiment, the second transfer device 70 is displaceably disposed between the test transfer station 30 and the test machine 50 for taking out the die D in the test machine 50 for testing. In this case, the second transfer device 70 includes a base and a pick-and-place head. The pick-and-place head is rotatably disposed on the base, and the pick-up head sucks the die D through vacuum suction, and when the positioning is reached, The ejector mechanism ejects the die D. However, the structural configuration of the second transfer device 70 is merely illustrative and not limited to this structure.

於一實施例中,出料載盤分類區80包含多個出料載盤81,每一個出料載盤81訊號連接於控制器C並用以承載依據測試結果分類的不同裸晶D(例如良品或不良品)。於此,第二移載裝置70也位於測試機50與出料載盤分類區80之間,具體而言,出料載盤分類區80位於第二移載裝置70的位移路徑上,藉此,第二移載裝置70能將測試完成的裸晶D依據測試結果分別置放於不同的出料載盤81。In one embodiment, the discharge tray sorting area 80 includes a plurality of discharge trays 81. Each of the discharge trays 81 is connected to the controller C and is used to carry different bare crystals D (for example, good products) classified according to the test results. Or defective products). Here, the second transfer device 70 is also located between the test machine 50 and the discharge tray sorting area 80. Specifically, the discharge tray sorting area 80 is located on the displacement path of the second transfer unit 70, whereby The second transfer device 70 can place the tested bare crystals D on different discharge trays 81 according to the test results.

以下說明裸晶測試系統的運作,首先,將待測試的裸晶D置放於入料區10的入料載盤移載台11上之入料載盤12。入料載盤12內可以同時置放多個待測試的裸晶D,在裸晶D置放於入料載盤12內之後,第一取像裝置20對入料載盤12內的其中一個裸晶D的第一外輪廓D11進行取像。在第一取像裝置20拍攝取得第一外輪廓影像之後,控制器C以第一外輪廓影像比對初定位基礎影像,在第一外輪廓影像與初定位基礎影像不符時,透過入料線性調整單元112及入料角度調整單元113調整入料載盤12的位置,使裸晶D的位置隨之改變至與初定位基礎影像一致。The operation of the bare crystal test system will be described below. First, the die D to be tested is placed on the feed carrier 12 on the feed tray transfer stage 11 of the feed zone 10. A plurality of die D to be tested may be placed in the loading tray 12 at the same time. After the die D is placed in the loading tray 12, the first image capturing device 20 pairs one of the loading trays 12 The first outer contour D11 of the bare crystal D is imaged. After the first image capturing device 20 captures and obtains the first outer contour image, the controller C compares the first outer contour image with the first outer contour image, and when the first outer contour image does not match the initial positioning base image, the feed linearity is adopted. The adjusting unit 112 and the feeding angle adjusting unit 113 adjust the position of the loading tray 12 so that the position of the bare crystal D is changed to coincide with the initial positioning base image.

於此,在裸晶D經過以初定位基礎影像為基礎調整位置後,裸晶D的基板D1外觀位置已能確保位於第二取像裝置60的取像範圍內,以便於進行後續的位置校正工作。在控制器C控制入料載盤移載台11進行位置的補償校正後,第一移載裝置40便將已完成校正的裸晶D取出並移載至測試移載台30上。Here, after the bare crystal D is adjusted based on the initial positioning base image, the appearance position of the substrate D1 of the bare crystal D can be ensured to be within the image capturing range of the second image capturing device 60, so as to facilitate subsequent position correction. jobs. After the controller C controls the loading tray transfer stage 11 to perform the position correction correction, the first transfer device 40 takes out and transfers the corrected bare crystal D to the test transfer stage 30.

在第一移載裝置40移載裸晶D至測試移載台30的同時,第一取像裝置20以及入料載盤移載台11便能繼續對入料載盤12內的其他裸晶D進行取像、比對及位置補償的動作。於此,測試移載台30及測試機50的數量可以為多數個以適於裸晶D的連續入料。While the first transfer device 40 transfers the die D to the test transfer station 30, the first image capture device 20 and the feed carrier transfer table 11 can continue to other die in the feed carrier 12. D performs the operations of image acquisition, comparison, and position compensation. Here, the number of test transfer stations 30 and test machines 50 may be a plurality of continuous feeds suitable for the bare die D.

接著,在裸晶D被移載至測試移載台30之後,第二取像裝置60對測試移載台30上的裸晶D拍攝第二外輪廓影像,拍攝第二外輪廓影像之後,以第二外輪廓影像定義出座標值(此即為銲墊位置的座標值),接著比對第二外輪廓影像的座標值與針尖位置座標值。當第二外輪廓影像的座標值與針尖位置座標值不符時,測試移載台30透過測試線性調整單元32及測試角度調整單元33調整角度或線性位移以使裸晶D的第二外輪廓影像之座標值與針尖位置座標值相符,在測試移載台30上的裸晶D之第二外輪廓影像之座標值符合針尖位置座標值之後,測試移載台30移載裸晶D至測試機50內,並且透過Z方向位移組件323將載座34及其上之裸晶D沿Z方向頂推上升至接觸探針卡51的探針以進行針測。於此,第二取像裝置60的數量可以為單一或是對應測試移載台30的數量而定。Then, after the die D is transferred to the test transfer stage 30, the second image capturing device 60 takes a second outer contour image on the bare crystal D on the test transfer stage 30, and after capturing the second outer contour image, The second outer contour image defines the coordinate value (this is the coordinate value of the pad position), and then compares the coordinate value of the second outer contour image with the coordinate value of the tip position. When the coordinate value of the second outer contour image does not match the needle position coordinate value, the test transfer table 30 adjusts the angle or linear displacement through the test linear adjustment unit 32 and the test angle adjusting unit 33 to make the second outer contour image of the bare crystal D The coordinate value corresponds to the coordinate value of the tip position. After the coordinate value of the second outer contour image of the bare crystal D on the test transfer table 30 conforms to the coordinate value of the needle tip position, the test transfer station 30 transfers the die D to the test machine. Within 50, and through the Z-direction displacement assembly 323, the carrier 34 and the die D thereon are pushed up in the Z direction to the probe contacting the probe card 51 for needle testing. Here, the number of the second image capturing devices 60 may be singular or corresponding to the number of test transfer stations 30.

進一步地,本案之裸晶測試系統可以配合不同批次的裸晶或不同的探針卡進行測試。於此,在一實施例中,更包含第三取像裝置90,第三取像裝置90與控制器C訊號連接。使用者在更換不同的探針卡51進行初次測試前,第三取像裝置90對探針卡51的針尖拍攝影像,第三取像裝置90拍攝針尖位置影像之後,第三取像裝置90將針尖影像傳送至控制器C,控制器C將針尖影像定義出對應的座標值。如此一來,相同的探針卡51的測試工作中,控制器C便能控制測試移載台30能將裸晶D的位置移載至使銲墊D2位置的座標值對應針尖位置座標值,藉此確保每一個裸晶D的銲墊D2位置都能位於測試位置。Further, the bare crystal test system of the present invention can be tested with different batches of bare crystal or different probe cards. In this embodiment, the third image capturing device 90 is further included, and the third image capturing device 90 is connected to the controller C signal. Before the user replaces the different probe card 51 for the initial test, the third image capturing device 90 captures an image of the needle tip of the probe card 51, and after the third image capturing device 90 captures the image of the needle tip position, the third image capturing device 90 The tip image is transmitted to controller C, which defines the tip image as the corresponding coordinate value. In this way, in the test work of the same probe card 51, the controller C can control the test transfer table 30 to transfer the position of the die D to the coordinate value of the position of the pad D2 corresponding to the coordinate value of the tip position. This ensures that the position of the pad D2 of each die D can be located at the test position.

於一實施例中,請配合參閱圖8並配合圖11,第三取像裝置90係固定設置於測試移載台30上並與控制器C訊號連接。具體地,第三取像裝置90係固定於測試移載台30的載座34上,據此使得第三取像裝置90得以隨測試移載台30同步位移,藉以與測試移載台30上的裸晶具有相同的位置基礎。In an embodiment, with reference to FIG. 8 and FIG. 11 , the third image capturing device 90 is fixedly disposed on the test transfer station 30 and connected to the controller C signal. Specifically, the third image capturing device 90 is fixed on the carrier 34 of the test transfer station 30, thereby enabling the third image capturing device 90 to be synchronously displaced with the test transfer station 30, thereby being used on the test transfer station 30. The bare crystals have the same positional basis.

繼續參閱圖11,於一實施例中,第三取像裝置90具有觀測端91及取像端92。觀測端91供人員觀測,取像端92供以對探針的針尖取像。而為便於人員觀測,觀測端91與取像端92所朝向的方向係垂直90度。具體地,第三取像裝置90的觀測端91係沿Y方向開放而能供人員由Y方向進行觀測。第三取像裝置90的取像端92則沿Z方向開放而能擷取Z方向上的影像。With continued reference to FIG. 11, in an embodiment, the third image capturing device 90 has an observation end 91 and an image capturing end 92. The observation end 91 is for human observation, and the image pickup end 92 is provided for taking the image of the probe tip. For the convenience of personnel observation, the direction of the observation end 91 and the image capturing end 92 is 90 degrees perpendicular to each other. Specifically, the observation end 91 of the third image taking device 90 is open in the Y direction and can be observed by the person in the Y direction. The image capturing end 92 of the third image capturing device 90 is opened in the Z direction to capture an image in the Z direction.

進一步地,為使第三取像裝置90的觀測端91能擷取與觀測端垂直90度的影像,第三取像裝置90的觀測端91與取像端92之間更設置第一反射鏡93與第二反射鏡94。第一反射鏡93能將沿Y方向射入的光線反射至沿X方向射出。第二反射鏡94接收由第一反射鏡93射出之光線,第二反射鏡94再將沿X方向射入的光線反射至沿Z方向射出,藉此使得觀測端92得以觀測與觀測端垂直90度位置的影像。Further, in order to enable the observation end 91 of the third image capturing device 90 to capture an image perpendicular to the observation end by 90 degrees, a first mirror is further disposed between the observation end 91 of the third image capturing device 90 and the image capturing end 92. 93 and the second mirror 94. The first mirror 93 can reflect the light incident in the Y direction to be emitted in the X direction. The second mirror 94 receives the light emitted by the first mirror 93, and the second mirror 94 reflects the light incident in the X direction to emit in the Z direction, thereby causing the observation end 92 to be observed perpendicular to the observation end 90. Image of the position.

基於此,第三取像裝置90透過第一反射鏡93與第二反射鏡94的設置而能提供人員觀測與觀測端垂直90度角位置處的影像。第三取像裝置90不須直立地設置於Z方向上,不會造成測試移載台30於Z方向上的高度擴張,減小測試移載台30所需占據的空間需求。值得說明的是,前述第三取像裝置90之具體結構組態僅為用以說明的其中一實施態樣,本創作並不以此為限。Based on this, the third image capturing device 90 can provide a person to observe the image at an angular position of 90 degrees perpendicular to the observation end through the arrangement of the first mirror 93 and the second mirror 94. The third image capturing device 90 does not need to be disposed upright in the Z direction, and does not cause a height expansion of the test transfer stage 30 in the Z direction, thereby reducing the space requirement required for testing the transfer stage 30. It should be noted that the specific configuration of the third image capturing device 90 is only one of the embodiments for illustration, and the present invention is not limited thereto.

更具體地,於此實施例中,裸晶D的第二外輪廓影像對應之座標值之座標原點基礎與針尖位置座標值的座標原點相同。藉此,測試移載台30便能透過比對銲墊D2配置位置資訊與針尖位置座標值作為校正位置的基礎。如此一來,安裝探針卡時的人員操作誤差將不會造成後續位置的變異,後續的裸晶D位置校正工作皆能以實際的探針卡51之針尖位置為基礎,藉此可以確實排除人員操作的誤差因素,並能降低探針卡51的安裝難度及費時,提高操作順暢度。此外,於一實施例中,探針卡51係安裝於測試機50後維持其固定位置,在進行測試時也由測試移載台改變於Z方向上的位置以接觸探針卡51進行測試,據此使探針卡51在安裝後的位置參數變異可能盡可能地被消除,而能確保後續補償調整的精準度。More specifically, in this embodiment, the coordinate origin origin of the coordinate value corresponding to the second outer contour image of the bare crystal D is the same as the coordinate origin of the needle position coordinate value. Thereby, the test transfer stage 30 can configure the position information and the tip position coordinate value as the basis of the correction position through the matching pad D2. In this way, the human operation error when installing the probe card will not cause the variation of the subsequent position, and the subsequent bare crystal D position correction work can be based on the actual needle position of the probe card 51, thereby being able to surely exclude The error factor of the personnel operation can reduce the difficulty and time consuming of the installation of the probe card 51, and improve the smoothness of the operation. In addition, in an embodiment, the probe card 51 is mounted on the testing machine 50 to maintain its fixed position, and is also changed in the Z direction by the test transfer station to test the probe card 51 when testing. Accordingly, the positional parameter variation of the probe card 51 after installation may be eliminated as much as possible, and the accuracy of the subsequent compensation adjustment can be ensured.

進一步地,由於測試機50是透過裸晶D與探針卡51的垂直受力接觸進行針測,裸晶D在每一次接觸探針時都必須承受應力。此外,在探針與裸晶D接觸後,還必須再更進一步地施壓,使探針在垂直裸晶D的方向上產生適當的垂直方向位移量(針測行程,Overdrive),讓探針相對於裸晶D的銲墊D2產生適當的針測壓力,以使探針得以刮破銲墊D2上的氧化層進而確實地形成導電連接。Further, since the test machine 50 is subjected to needle measurement through the vertical force contact of the die D with the probe card 51, the die D must be subjected to stress every time the probe is touched. In addition, after the probe is in contact with the bare crystal D, it is necessary to further apply pressure so that the probe generates an appropriate vertical displacement in the direction of the vertical die D (needle stroke, Overdrive), allowing the probe A suitable stylus pressure is generated relative to the pad D2 of the die D to allow the probe to scratch the oxide layer on the pad D2 to form a conductive connection.

基此,探針在每次針測所承受的應力都會產生磨耗而影響其壽命。因此,若能掌握探針每一次針測所受之應力也就能相對掌握探針的壽命。為此,當探針卡51在安裝後保持位於相同的Z方向位置時,裸晶接觸探針進行針測時能受到相同的接觸針壓,而接觸針壓又與針測時的接觸電阻相關,如此一來,在確保探針在每次針測時的接觸針壓相同的狀況下,就能進一步地提高針測的精準度,並能更進一步地掌握探針的磨耗及壽命。Therefore, the stress experienced by the probe on each needle measurement will cause wear and affect its life. Therefore, if you can grasp the stress of each probe of the probe, you can grasp the life of the probe. For this reason, when the probe card 51 is kept in the same Z-direction position after installation, the bare-crystal contact probe can receive the same contact pin pressure when performing the needle test, and the contact pin pressure is related to the contact resistance at the time of the needle test. In this way, under the condition that the contact needle pressure of the probe is the same at each needle measurement, the accuracy of the needle measurement can be further improved, and the wear and life of the probe can be further grasped.

請配合參閱圖5,於一更具體的實施例中,更包含第一導引模組G1、第二導引模組G2、第三導引模組G3、第四導引模組G4及第五導引模組G5。第一導引模組G1沿Y方向延伸,而入料載盤移載台11是可沿Y方向移動地設置於第一導引模組G1上。Referring to FIG. 5, in a more specific embodiment, the first guiding module G1, the second guiding module G2, the third guiding module G3, the fourth guiding module G4, and the Five guiding modules G5. The first guiding module G1 extends in the Y direction, and the loading tray transfer stage 11 is movably disposed in the Y direction on the first guiding module G1.

第二導引模組G2沿X方向位移,且第二導引模組G2橫跨第一導引模組G1,第一取像裝置20可沿X方向移動地設置於第二導引模組G2上。藉此,第一取像裝置20在拍攝入料載盤移載台11上的裸晶D之影像時,可沿X方向移動以便於完整地拍攝入料載盤移載台11上的所有裸晶D之影像。The second guiding module G2 is displaced in the X direction, and the second guiding module G2 is disposed across the first guiding module G1, and the first image capturing device 20 is movable in the X direction to the second guiding module. On G2. Thereby, the first image capturing device 20 can move in the X direction when capturing the image of the bare crystal D on the loading tray transfer stage 11 so as to completely capture all the bare on the loading tray transfer stage 11. Image of crystal D.

第三導引模組G3平行於第一導引模組G1並與第一導引模組G1間隔距離,測試移載台30可沿Y方向位移地設置於第三導引模組G3上。The third guiding module G3 is parallel to the first guiding module G1 and spaced apart from the first guiding module G1, and the test transfer table 30 is displaceably disposed on the third guiding module G3 in the Y direction.

於此,參閱圖8,第三導引模組G3可以包含馬達、螺桿、螺帽、二滑軌及二滑塊,馬達連接螺桿而能帶動螺桿轉動,螺桿沿Y方向延伸,螺帽與螺桿螺合,各滑軌沿Y方向延伸並分別固定於螺桿的兩側,滑塊可滑移地套設於滑軌。此外,測試基座31固定結合於螺帽及滑塊而能沿Y方向線性位移。Here, referring to FIG. 8, the third guiding module G3 may include a motor, a screw, a nut, two sliding rails and two sliding blocks. The motor is connected to the screw to drive the screw to rotate, the screw extends in the Y direction, and the nut and the screw The sliding rails extend in the Y direction and are respectively fixed to the two sides of the screw, and the slider is slidably sleeved on the sliding rail. In addition, the test base 31 is fixedly coupled to the nut and the slider to be linearly displaced in the Y direction.

於此,測試移載台30的數量及第三導引模組G3的數量均為複數,各第三導引模組G3為平行設置,而每一第三導引模組G3上對應設置測試機50,如此一來,每一測試移載台30可沿各第三導引模組G3位移以將裸晶D移載至測試機50內。當然,測試移載台30與第三導引模組G3的數量也可僅為單一。The number of the test transfer station 30 and the number of the third guide module G3 are both plural, and the third guide modules G3 are arranged in parallel, and the corresponding setting test is performed on each third guide module G3. In this way, each test transfer station 30 can be displaced along each of the third guide modules G3 to transfer the die D into the test machine 50. Of course, the number of test transfer stations 30 and third guide modules G3 may also be only a single.

第四導引模組G4沿X方向延伸,於此,第四導引模組G4橫跨第三導引模組G3,而第二取像裝置60可沿X方向移動地設置於第四導引模組G4上。於此,第四導引模組G4的延伸範圍涵蓋各第三導引模組G3的配置範圍,使第二取像裝置60可沿X方向位移地對各測試移載台30上的裸晶D取像。當然,當裸晶測試系統僅設置單一組測試移載台30時,即可省略第四導引模組G4的設置,而第二取像裝置60便可以是設置於固定位置。The fourth guiding module G4 extends in the X direction. The fourth guiding module G4 traverses the third guiding module G3, and the second imaging device 60 is movable in the X direction to the fourth guiding. On the index module G4. The extension range of the fourth guiding module G4 covers the configuration range of each third guiding module G3, so that the second imaging device 60 can be displaced in the X direction to the bare crystal on each test transfer station 30. D takes the image. Of course, when the bare crystal test system only sets a single group of test transfer stations 30, the setting of the fourth guide module G4 can be omitted, and the second image capture device 60 can be disposed at a fixed position.

第五導引模組G5沿X方向延伸,且第五導引模組G5橫跨第一導引模組G1以及第三導引模組G3。於此,第一移載裝置40及第二移載裝置70分別可沿X方向位移地設置於第五導引模組G5上。據此,第一移載裝置40可以透過第五導引模組G5將裸晶D由入料區10移載至測試移載台30,第二移載裝置70可以透過第五導引模組G5將裸晶D由測試移載台30移載至出料載盤分類區80。The fifth guiding module G5 extends in the X direction, and the fifth guiding module G5 straddles the first guiding module G1 and the third guiding module G3. Here, the first transfer device 40 and the second transfer device 70 are respectively displaceably disposed on the fifth guiding module G5 in the X direction. Accordingly, the first transfer device 40 can transfer the die D from the loading zone 10 to the test transfer station 30 through the fifth guiding module G5, and the second transfer device 70 can pass through the fifth guiding module. G5 transfers the die D from the test transfer station 30 to the discharge tray sorting area 80.

經由上述可知,裸晶D是在經過兩次的位置校正後進行針測,因此可以確保針測的工作順利進行,且在第二次的位置校正是以銲墊D2的位置與針尖位置為座標對位基準,因此即使裸晶D的第一外輪廓D11因晶圓切割時產生差異化,在第二次的位置校正時也能使裸晶D位於正確的針測位置,提高針測工作的順暢性。It can be seen from the above that the bare crystal D is subjected to the needle measurement after the position correction twice, so that the needle test can be ensured smoothly, and the second position correction is based on the position of the pad D2 and the position of the needle tip. The alignment reference, therefore, even if the first outer contour D11 of the die D is differentiated due to the wafer cutting, the bare die D can be positioned at the correct needle measurement position during the second position correction, thereby improving the needle measurement work. Smoothness.

再請參閱圖12,圖12繪示第一取像裝置20設置於相鄰測試移載台30位置的實施例。於此,測試移載台30與測試機50之間可以設置門柱,而第一取像裝置20與第二取像裝置60分別設置於門柱的兩側。且第一取像裝置20靠近測試移載台30,第二取像裝置60靠近測試機50。據此,本實施例可以適用於人員手動將裸晶直接置放至測試移載台30上的手動測試模式。Referring to FIG. 12 again, FIG. 12 illustrates an embodiment in which the first image capturing device 20 is disposed at a position adjacent to the test transfer station 30. Here, the door post can be disposed between the test transfer table 30 and the test machine 50, and the first image taking device 20 and the second image capturing device 60 are respectively disposed on both sides of the door post. The first image capturing device 20 is adjacent to the test transfer station 30, and the second image capturing device 60 is adjacent to the test machine 50. Accordingly, the present embodiment can be applied to a manual test mode in which a person manually places a bare die directly on the test transfer stage 30.

此外,於一實施例中,當系統是同時配置多組測試移載台30時,測試移載台30平行並列,且門柱則可跨越各測試移載台30分布的範圍。而第二導引模組G2及第四導引模組G4則可設置於門柱上,藉此適於多組測試移載台30的運作。In addition, in an embodiment, when the system is configured with multiple sets of test transfer stations 30 at the same time, the test transfer stations 30 are parallel and juxtaposed, and the gate posts can span the range distributed by the test transfer stations 30. The second guiding module G2 and the fourth guiding module G4 can be disposed on the door post, thereby being suitable for the operation of the plurality of sets of test transfer stations 30.

雖然本新型以前述之實施例揭露如上,然其並非用以限定本新型,任何熟習相像技術者,在不脫離本新型之精神和範圍內,當可作些許之更動與潤飾,因此本新型之專利保護範圍須視本說明書所附之申請專利範圍所界定者為準。Although the present invention is disclosed above in the foregoing embodiments, it is not intended to limit the present invention. Any one skilled in the art can make some modifications and retouchings without departing from the spirit and scope of the present invention. The scope of patent protection shall be subject to the definition of the scope of the patent application attached to this specification.

D‧‧‧裸晶D‧‧‧ bare crystal

D1‧‧‧基板 D1‧‧‧Substrate

D2‧‧‧銲墊 D2‧‧‧ solder pads

D11‧‧‧第一外輪廓 D11‧‧‧ first outline

D21‧‧‧第二外輪廓 D21‧‧‧ second outline

10‧‧‧入料區 10‧‧‧Incoming area

11‧‧‧入料載盤移載台 11‧‧‧Loading tray transfer station

111‧‧‧入料基座 111‧‧‧Feeding base

112‧‧‧入料線性調整單元 112‧‧‧Feed linear adjustment unit

113‧‧‧入料角度調整單元 113‧‧‧Feed angle adjustment unit

114‧‧‧結合單元 114‧‧‧ combination unit

12‧‧‧入料載盤 12‧‧‧Feeding tray

20‧‧‧第一取像裝置 20‧‧‧First image capture device

30‧‧‧測試移載台 30‧‧‧Test transfer station

31‧‧‧測試基座 31‧‧‧Test base

32‧‧‧測試線性調整單元 32‧‧‧Test linear adjustment unit

321‧‧‧載板 321‧‧‧ carrier board

322‧‧‧轉座 322‧‧‧transposition

323‧‧‧Z方向位移組件 323‧‧‧Z direction displacement assembly

3231‧‧‧第一導引模組 3231‧‧‧First Guide Module

3232‧‧‧第二導引模組 3232‧‧‧Second guiding module

33‧‧‧測試角度調整單元 33‧‧‧Test angle adjustment unit

331‧‧‧線性帶動裝置 331‧‧‧Linear drive

332‧‧‧第一皮帶 332‧‧‧First belt

333‧‧‧第二皮帶 333‧‧‧Second belt

334‧‧‧導引弧塊 334‧‧‧Guided arc

3341‧‧‧弧面 3341‧‧‧ curved surface

3342‧‧‧平面 3342‧‧‧ Plane

34‧‧‧載座 34‧‧‧Hosting

40‧‧‧第一移載裝置 40‧‧‧First transfer device

50‧‧‧測試機 50‧‧‧Testing machine

51‧‧‧探針卡 51‧‧‧ Probe Card

60‧‧‧第二取像裝置 60‧‧‧second image capture device

70‧‧‧第二移載裝置 70‧‧‧Second transfer device

80‧‧‧已測載盤分類區 80‧‧‧Measured disk classification area

81‧‧‧出料載盤 81‧‧‧distribution tray

90‧‧‧第三取像裝置 90‧‧‧ Third image capture device

91‧‧‧觀測端 91‧‧‧ Observatory

92‧‧‧取像端 92‧‧‧Image terminal

93‧‧‧第一反射鏡 93‧‧‧First mirror

94‧‧‧第二反射鏡 94‧‧‧second mirror

G1‧‧‧第一導引模組 G1‧‧‧First Guide Module

G2‧‧‧第二導引模組 G2‧‧‧Second guiding module

G3‧‧‧第三導引模組 G3‧‧‧ Third Guide Module

G4‧‧‧第四導引模組 G4‧‧‧4th guidance module

G5‧‧‧第五導引模組 G5‧‧‧ fifth guiding module

C‧‧‧控制器 C‧‧‧ controller

圖1為本新型裸晶測試系統之一實施例的架構模塊圖。 圖2為本新型裸晶測試系統所測試之裸晶的示意圖。 圖3為圖2中裸晶的局部放大平面圖。 圖4為本新型裸晶測試系統中測試機之一實施例的模塊圖。 圖5為本新型裸晶測試系統之一實施例的配置圖。 圖6為本新型裸晶測試系統中入料區之一實施例的模塊圖。 圖7為本新型裸晶測試系統中測試移載台之一實施例的模塊圖。 圖8為本新型裸晶測試系統中測試移載台之一實施例的結構圖。 圖9為本新型裸晶測試系統中測試移載台之一實施例的剖視圖。 圖10為本新型裸晶測試系統中測試移載台之一實施例的俯視圖。 圖11為本新型裸晶測試系統中第三取像裝置之一實施例的示意圖。 圖12為本新型裸晶測試系統中測試移載台再一實施例的結構圖。1 is a block diagram of an architecture of an embodiment of a new bare die test system. 2 is a schematic view of a bare die tested by the new bare die test system. Figure 3 is a partially enlarged plan view of the bare crystal of Figure 2. 4 is a block diagram of an embodiment of a test machine in the present bare die test system. FIG. 5 is a configuration diagram of an embodiment of a new bare die test system. Figure 6 is a block diagram of one embodiment of a feed zone in a prior art bare die test system. 7 is a block diagram of an embodiment of a test transfer station in the present bare die test system. FIG. 8 is a structural diagram of an embodiment of a test transfer station in the present bare die test system. Figure 9 is a cross-sectional view of one embodiment of a test transfer station in the present bare die test system. Figure 10 is a top plan view of one embodiment of a test transfer station in the present bare die test system. 11 is a schematic diagram of an embodiment of a third image capturing device in the bare die test system of the present invention. FIG. 12 is a structural diagram of still another embodiment of a test transfer stage in the bare die test system of the present invention.

Claims (10)

一種裸晶測試系統,用以測試一裸晶,該裸晶包含一基板及一銲墊,該銲墊位於該基板上,包含: 一入料區,包含: 一入料載盤移載台,具有一入料線性調整單元以及一入料角度調整單元,該入料線性調整單元可沿相互垂直的一X方向及一Y方向位移,該入料角度調整單元可轉動;以及 一入料載盤,設置於該入料載盤移載台上,用以承載該裸晶; 一第一取像裝置,相鄰該入料載盤設置以對該裸晶的該基板取像; 一測試移載台,相鄰該入料區設置,該測試移載台具有一測試基座、一測試線性調整單元、一測試角度調整單元以及一載座,該測試基座可沿該Y方向位移,該測試線性調整單元設置於該測試基座上並可沿該X方向及一Z方向位移,該X方向、該Y方向及該Z方向相互垂直,該測試角度調整單元連接該測試線性調整單元,該載座可沿該Z方向位移地設置於該測試線性調整單元上; 一第一移載裝置,可位移地設置於該入料區以及該測試移載台之間用以取置該裸晶; 一測試機,具有一探針卡,該測試機固定於該測試移載台的位移路徑上,該探針卡固定於該測試機上; 一第二取像裝置,設置於測試移載台與該測試機之間以對該裸晶的該銲墊取像;以及 一控制器,訊號連接於該入料載盤移載台、該第一取像裝置、該測試移載台、該第一移載裝置、該測試機以及該第二取像裝置。A bare crystal test system for testing a die, the die includes a substrate and a pad, the pad is located on the substrate, and includes: a feed zone, comprising: a feed tray transfer station, The utility model has a feeding linear adjusting unit and a feeding angle adjusting unit, wherein the feeding linear adjusting unit is displaceable along an X direction and a Y direction perpendicular to each other, the feeding angle adjusting unit is rotatable; and a feeding tray Provided on the loading tray transfer stage for carrying the bare crystal; a first image capturing device disposed adjacent to the loading carrier to image the substrate of the bare crystal; Positioned adjacent to the feeding zone, the test transfer station has a test base, a test linear adjustment unit, a test angle adjustment unit and a carrier, the test base can be displaced along the Y direction, the test The linear adjustment unit is disposed on the test base and is displaceable along the X direction and the Z direction. The X direction, the Y direction and the Z direction are perpendicular to each other, and the test angle adjusting unit is connected to the test linear adjustment unit. The seat can be displaced along the Z direction On the test linear adjustment unit; a first transfer device is displaceably disposed between the input region and the test transfer station for accommodating the bare crystal; a test machine having a probe card, The test machine is fixed on the displacement path of the test transfer table, the probe card is fixed on the test machine; a second image capture device is disposed between the test transfer station and the test machine to the bare crystal And the controller, the signal is connected to the loading tray transfer station, the first image capturing device, the test transfer station, the first transfer device, the testing machine, and the first Two image capture devices. 如請求項1所述之裸晶測試系統,其中該第二取像裝置的影像解析度高於該第一取像裝置的影像解析度。The bare crystal test system of claim 1, wherein the image resolution of the second image capturing device is higher than the image resolution of the first image capturing device. 如請求項1所述之裸晶測試系統,其中該測試線性調整單元包含一載板、一轉座以及一Z方向位移組件,該載板可沿該X方向位移地設置於該測試基座上,該轉座可轉動地結合於該載板,該Z方向位移組件設置於該轉座,該測試角度調整單元與該轉座連接。The bare crystal test system of claim 1, wherein the test linear adjustment unit comprises a carrier plate, a rotary base and a Z-direction displacement assembly, and the carrier plate is displaceably disposed on the test base along the X direction. The rotating seat is rotatably coupled to the carrier, the Z-direction displacement component is disposed on the rotating seat, and the test angle adjusting unit is coupled to the rotating base. 如請求項3所述之裸晶測試系統,其中該Z方向位移組件包含一第一導引件及一第二導引件,該第一導引件及該第二導引件均為梯形塊體,該第一導引件與該第二導引件的斜面相對並能相對滑移,該第一導引件貼抵於該轉座並能沿該X方向滑移,該第二導引件與該載座連接。The die test system of claim 3, wherein the Z-direction displacement component comprises a first guiding member and a second guiding member, the first guiding member and the second guiding member are both trapezoidal blocks a first guiding member opposite to the inclined surface of the second guiding member and capable of sliding relative to each other, the first guiding member abutting against the rotating seat and capable of sliding along the X direction, the second guiding The piece is connected to the carrier. 如請求項3所述之裸晶測試系統,其中該測試角度調整單元包含一線性帶動裝置、一第一皮帶、一第二皮帶及一導引弧塊,該線性帶動裝置分別與該第一皮帶及該第二皮帶連接,該第一皮帶與該第二皮帶分別於該導引弧塊連接,該導引弧塊與該轉座連接。The bare crystal test system of claim 3, wherein the test angle adjusting unit comprises a linear driving device, a first belt, a second belt and a guiding arc block, and the linear driving device and the first belt respectively And connecting the second belt, the first belt and the second belt are respectively connected to the guiding arc block, and the guiding arc block is connected to the rotating seat. 如請求項5所述之裸晶測試系統,其中該導引弧塊具有相對的一弧面及一平面,該第一皮帶及該第二皮帶抵靠於該弧面,該平面抵靠於該轉座。The bare crystal testing system of claim 5, wherein the guiding arc has a curved surface and a plane, and the first belt and the second belt abut the arc surface, the plane abuts against the plane Transposition. 如請求項1所述之裸晶測試系統,更包含一第三取像裝置設置於該測試移載台上,且該第三取像裝置與該控制器訊號連接。The die test system of claim 1, further comprising a third image capturing device disposed on the test transfer station, wherein the third image capture device is coupled to the controller signal. 如請求項7所述之裸晶測試系統,其中該第三取像裝置具有一觀測端及一取像端,該觀測端開放的方向與該取像端開放的方向垂直。The bare crystal testing system of claim 7, wherein the third image capturing device has an observation end and an image capturing end, and the viewing end is open in a direction perpendicular to a direction in which the image capturing end is open. 如請求項8所述之裸晶測試系統,其中該觀測端沿該Y方向開放,該取像端沿該Z方向開放。The bare crystal test system of claim 8, wherein the observation end is open in the Y direction, and the image pickup end is open in the Z direction. 如請求項1所述之裸晶測試系統,更包含一第二移載裝置以及一出料載盤分類區,該出料載盤分類區設置於該第二移載裝置的位移路徑上。The bare die test system of claim 1, further comprising a second transfer device and a discharge tray classification area, wherein the discharge tray classification area is disposed on the displacement path of the second transfer device.

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* Cited by examiner, † Cited by third party
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TWI708069B (en) * 2019-01-17 2020-10-21 均豪精密工業股份有限公司 Probe self-correction system and method thereof
CN117524946A (en) * 2024-01-08 2024-02-06 无锡昌鼎电子有限公司 Double-wire bare chip test sorting machine

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI708069B (en) * 2019-01-17 2020-10-21 均豪精密工業股份有限公司 Probe self-correction system and method thereof
CN117524946A (en) * 2024-01-08 2024-02-06 无锡昌鼎电子有限公司 Double-wire bare chip test sorting machine
CN117524946B (en) * 2024-01-08 2024-04-09 无锡昌鼎电子有限公司 Double-wire bare chip test sorting machine

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