TWM570746U - Exhaust gas introduction device - Google Patents

Abstract

The present invention provides an exhaust gas introduction device, which comprises a heater embedded in a reaction chamber and located on a center line of the reaction chamber, and one end of the plurality of exhaust gas introduction tubes is respectively connected to the reaction chamber, and is equal to the number The bent pipe of the exhaust gas introduction pipe has a first pipe portion and a second pipe portion, each of the first pipe portions is pivotally disposed in the exhaust gas introduction pipe, and each of the second pipe portions is pierced to the reaction a chamber, wherein each of the second tube portions forms an exhaust port, and a line of each of the second tube portions is excluded from intersecting the center line, and a line between the tube core line and the horizontal surface of each of the second tube portions is An angle of inclination enables the plurality of exhaust ports to be introduced into the exhaust gas to form an annular exhaust gas swirling path; thereby, the problem of poor sintering effect due to limited time of contact with the flame or hot air is improved.

Description

Exhaust gas introduction device

The present invention relates to a supply technology for introducing exhaust gas into a reaction chamber in a semiconductor exhaust gas treatment device, and more particularly to an exhaust gas introduction device.

It is known that the exhaust gas generated by the semiconductor process includes SiH ₄ , H ₂ SiCl ₂ (DCS), WF ₆ , BF ₃ , NF ₃ , SF ₆ , CF ₄ , C ₂ F ₆ C ₃ F _{8 ,} etc., wherein NF ₃ , SF ₆ , CF ₄ , C ₂ F ₆ and C ₃ F ₈ and other harmful substances (Perfluororated Compounds (PFC)), if discharged into the atmosphere, cause environmental pollution, even the greenhouse effect, causing global warming Severe effects, so the exhaust gases must be treated as harmless gases.

The semiconductor exhaust gas treatment equipment widely used in the workshop is used to treat the above-mentioned exhaust gas into a harmless gas. In general, known semiconductor exhaust gas treatment devices are provided with a reaction chamber for exhaust gas, and the exhaust gas generated by the semiconductor process is introduced into the reaction chamber, and the high temperature provided by the flame or hot air in the reaction chamber is Exhaust gas is sintered (ie, sintering reaction); in particular, a high-temperature sintering reaction can decompose fluoride gases such as NF ₃ , SF ₆ , CF ₄ , C ₂ F ₆ and C ₃ F ₈ into harmless Fluoride ion (F ^- ), in order to achieve the purpose of purifying the exhaust gas.

It is known that the semiconductor exhaust gas treatment device comprises an exhaust gas introduction pipe and a heater, wherein one end of the exhaust gas introduction pipe is implanted into the reaction chamber to form an outlet, and the exhaust gas introduction pipe communicates with the reaction chamber through the outlet thereof, and the exhaust gas introduction pipe is used To guide the exhaust gas into the reaction chamber. One end of the heater is implanted in the reaction chamber at the center of the reaction chamber, and the heater is used to generate a flame or hot air at the center of the reaction chamber. Further, the outlet of the exhaust gas introduction pipe is directed toward the center of the reaction chamber, so that the exhaust gas flows to the flame or hot air generated by the heater, by flame or heat. The high temperature of the air is used to sinter the exhaust gas.

However, when the exhaust gas is introduced into the reaction chamber through the outlet of the exhaust gas introduction pipe, since the outlet of the exhaust gas introduction pipe is toward the center of the reaction chamber, the exhaust gas is moved along a linear path to contact the heater at the center of the reaction chamber. The flame or hot air causes the exhaust gas to contact the flame or hot air for a limited time, and even the sintering effect of the exhaust gas is not good. Therefore, how to increase the time that the exhaust gas contacts the flame or the hot air becomes a technical problem to be overcome.

In view of this, the main purpose of the novel is to improve the time when the semiconductor exhaust gas contacts the flame or the hot air in the reaction chamber is limited, resulting in poor sintering effect of the exhaust gas, and further provides an exhaust gas introduction device, including: a reaction chamber, Having a center line; a heater, one end of which is implanted in the reaction chamber and located on the center line, and provides a heat source along the center line to enter the reaction chamber; a plurality of exhaust gas introduction tubes, one end of which respectively reacts with the reaction The chamber is connected to each other; and the bent tube equal to the exhaust gas introduction tube has a first tube portion and a second tube portion respectively connected to each other, and each of the first tube portions is along a first tube core a line extending, each of the second tube portions extending along a second tube core line, and each of the first tube portions is pivotally disposed in the exhaust gas introduction tube, and each of the second tube portions is pierced to The reaction chamber; wherein each of the second tube portions extends along the second tube core line to form an exhaust port, each of the second tube core lines is excluded from intersecting the center line, and each of the second tube lines is There is an orientation reaction between the horizontal planes Tipping the interior angle θ _2, the angle of inclination θ ₂ greater than 0 degrees and less than 90 degrees, so that the plurality of exhaust ports could recliner-like spacer is surrounded by the heat source to the reaction chamber, thus forming exhaust gas is introduced An annular exhaust gas swirling path.

In a further implementation, the centerline is perpendicular to the horizontal plane and the first tube line intersects the centerline.

In a further implementation, the reaction chamber is formed in a semiconductor exhaust gas treatment tank, and the top cover of the semiconductor waste gas treatment tank is provided with a head cover having a conical disc-shaped inner wall surface, and the inner wall surface is formed with a plurality of spaces The tube hole, the plurality of exhaust gas introduction pipes are respectively disposed in the pipe hole.

In a further implementation, an O-ring is disposed between each of the first tube portions pivotally connected to each other and each of the exhaust gas introduction tubes.

According to the above device, the technical effect of the present invention is that the exhaust gas is swirled in the reaction chamber by the guiding of the bending tube, which can increase the time for the exhaust gas to pass through the reaction chamber, so that the exhaust gas is fully exposed to the flame or Hot air, which in turn increases the sintering effect of the exhaust gas.

In addition, the relevant technical details that can be implemented by the present invention will be explained in the following embodiments and drawings.

1‧‧‧Semiconductor waste gas treatment tank

10‧‧‧Reaction chamber

11‧‧‧ center line

20‧‧‧heater

30‧‧‧Exhaust gas inlet pipe

31‧‧‧ Entrance

32‧‧‧Export

40‧‧‧Bent pipe

41‧‧‧ First Tube Department

411‧‧‧First tube heart

42‧‧‧Second Department

421‧‧‧Second tube heart

422‧‧‧Exhaust port

423‧‧‧Exhaust gas cyclotron path

50‧‧‧ head cover

51‧‧‧ inner wall

52‧‧‧ tube hole

60‧‧‧O-ring

70‧‧‧ horizontal plane

θ ₁ ‧‧‧Bend angle

θ ₂ ‧‧ ‧ inclination

1 is a cross-sectional view of a preferred embodiment of the present invention; FIG. 2 is a bottom view of the bent tube shown in FIG. 1 in the reaction chamber; FIG. 3 is a pivoting guide shown in FIG. FIG. 4 is a schematic view of the operation of FIG. 1; FIG. 5 is a schematic view of the operation of FIG.

First, referring to FIG. 1 , a preferred embodiment of the present invention is disclosed. The exhaust gas introduction device provided by the present invention includes a reaction chamber 10 , a heater 20 , a plurality of exhaust gas introduction tubes 30 , and the like. In the bent pipe 40 of the exhaust gas introduction pipe 30, wherein the reaction chamber 10 is formed in a semiconductor exhaust gas treatment tank 1, the reaction chamber 10 is a cylindrical space, and the reaction chamber 10 has a Center line 11. The exhaust gas generated by the semiconductor process is introduced into the reaction chamber 10, and the exhaust gas is sintered at a high temperature provided by a flame or hot air in the reaction chamber 10, and the harmful NF ₃ and SF ₆ in the exhaust gas can be Fluoride gases such as CF ₄ , C ₂ F ₆ and C ₃ F ₈ are decomposed into harmless fluoride ions (F ^- ), thereby purifying the exhaust gas.

The heater 20 is disposed at the top of the reaction chamber 10. In a specific implementation, the top cover of the semiconductor exhaust gas treatment tank 1 is provided with a head cover 50 disposed on the head cover 50 to make one end of the heater 20 Implantation reaction chamber 10 It is located on the centerline 11 of the reaction chamber 10 so that the heater 20 can provide a heat source along the centerline 11 into the center of the reaction chamber 10, which is implemented as a flame or hot air. More specifically, the heater 20 may be a flame generator that supplies a flame to sinter the exhaust gas. Alternatively, the heater 20 can be a hot rod that can supply hot air to sinter the exhaust.

The exhaust gas introduction pipe 30 is disposed at the top of the reaction chamber 10. In the specific implementation, the exhaust gas introduction pipe 30 is disposed on the head cover 50 to connect the exhaust gas introduction pipe 30 to the reaction chamber 10 to allow the exhaust gas introduction pipe 30 to be introduced. Exhaust gas can be directed into the reaction chamber 10 from the top of the reaction chamber 10. The plurality of exhaust gas introduction pipes 30 are disposed at equal intervals around the heater 20, so that the plurality of exhaust gas introduction pipes 30 can guide the exhaust gas to be uniformly distributed in the reaction chamber 10.

Further, the head cover 50 has a conical disc-shaped inner wall surface 51 surrounding the center line 11, and the inner wall surface 51 is formed with a plurality of tube holes 52 spaced apart therefrom, and the plurality of exhaust gas introduction tubes 30 are respectively disposed at the same The tube hole 52 communicates with the reaction chamber 10. Further, the two ends of the exhaust gas introduction pipe 30 are respectively formed with an inlet 31 and an outlet 32 which are connected to each other, and the exhaust gas introduction pipe 30 is connected to an exhaust gas supply end (not shown) via the inlet 31. The exhaust gas introduction pipe 30 communicates with the reaction chamber 10 via the outlet 32. The inlet 31 of the exhaust gas introduction pipe 30 is oriented in the same direction to facilitate the connection of the exhaust gas introduction pipe 30 to the exhaust gas supply end. The outlet 32 of the exhaust gas introduction pipe 30 is directed toward the center of the reaction chamber 10.

Referring to FIG. 1 and FIG. 2, the bending tubes 40 are respectively connected to each other to form a first tube portion 41 and a second tube portion 42. Each of the first tube portions 41 is along a first tube portion. A line 411 is formed, and each of the second tube portions 42 is formed along a second tube core 421. Each of the first tube wires 411 and the second tube core 421 has a bending angle θ ₁ ( As shown in FIG. 2, the bending angle θ ₁ is greater than 90 degrees and less than 180 degrees. Each of the first tube portion 41 and each of the second tube portions 42 is a continuous tube, and the bent tube 40 is welded by the first tube portion 41 and the second tube portion 42. to make. Further, each of the first tube portions 41 is pivotally disposed in the exhaust gas introduction tube 30, and each of the second tube portions 42 is pierced into the reaction chamber 10. Each of the second tube portions 42 extends along the second tube core 421 to form an exhaust port 422. The exhaust port 422 is located in the reaction chamber 10 to allow exhaust gas to pass through the second tube portions 42. The exhaust port 422 is introduced into the reaction chamber 10 in the direction of each of the second tube wires 421.

In a specific implementation, the second tube core 421 is excluded from intersecting the center line 11 , and the second tube core 421 and a horizontal surface 70 have an inclination angle θ ₂ inclined toward the reaction chamber 10 (eg, As shown in FIG. 1 , the inclination angle θ _{2 is} greater than 0 degrees and less than 90 degrees, so that the plurality of exhaust ports 422 can surround the heat source in a diagonally spaced manner within the reaction chamber 10 . Thereby, the exhaust gas is swirled in the reaction chamber 10 along the annular exhaust gas revolving path 423 (shown in FIGS. 4 and 5) through the guidance of the second tube portion 42, and can be increased. The time during which the exhaust gas passes through the reaction chamber 10.

Referring to FIG. 1 and FIG. 3 , the first pipe portion 41 and each of the exhaust gas introduction pipes 30 are provided with a clearance fit, and each of the first pipe portions 41 is pivoted in each of the exhaust gas introduction pipes 30 . Each of the second tube portions 42 is rotatable about the first tube core 411 of each of the first tube portions 41, thereby adjusting the inclination angle θ ₂ between each of the second tube portions 42 and the horizontal surface 70. Further, an O-ring 60 is disposed between each of the first pipe portions 41 and the exhaust gas introduction pipes 30 that are pivotally connected to each other, and the O-rings 60 and the outer walls of the first pipe portions 41 and the respective The frictional force generated between the inner walls of the exhaust gas introduction pipe 30 causes the first pipe portions 41 to be positioned in the respective exhaust gas introduction pipes 30, except that the first pipe portions 41 can be prevented from being inside the exhaust gas introduction pipes 30. Loosing maintains the inclination angle θ ₂ between each of the second tube portions 42 and the horizontal surface 70.

Referring to FIG. 4 and FIG. 5 together, the exhaust gas enters the exhaust gas introduction pipe 30 through the inlet 31 through the exhaust gas supply end, and then the exhaust gas is introduced into the reaction chamber 10 through the first pipe portion 41 and the second pipe portion 42 in sequence, and the exhaust gas is exhausted. The flow through the annular exhaust gas revolving path 423 in the reaction chamber 10 via the guiding of the second tube portion 42 can increase the time during which the exhaust gas passes through the reaction chamber 10, so that the exhaust gas sufficiently contacts the heater 20 The flame or hot air provided, thereby increasing the sintering effect of the exhaust gas.

The above embodiments are merely illustrative of the preferred embodiments of the present invention, but are not to be construed as limiting the scope of the present invention. Therefore, this new type should The content of the request as defined in the scope of the patent application shall prevail.

Claims (4)

An exhaust gas introduction device comprises: a reaction chamber having a center line; a heater, one end of which is implanted in the reaction chamber and located on the center line, and a heat source is provided along the center line to enter the reaction chamber; a plurality of exhaust gas introduction pipes, one end of which is respectively connected to the reaction chamber; and a bent pipe equal to the exhaust gas introduction pipe, respectively having a first pipe portion and a second pipe portion which are mutually connected to each other, each The first tube portion is formed along a first tube core line, and each of the second tube portions is formed along a second tube core line, and each of the first tube portions is pivotally disposed in the exhaust gas introduction tube And causing each of the second tube portions to penetrate into the reaction chamber; wherein each of the second tube portions extends along the second tube core line to form an exhaust port, each of the second tube core lines being excluded from the center The lines intersect, and each of the second tube lines and a horizontal plane has an inclination angle θ ₂ inclined toward the reaction chamber, and the inclination angle θ _{2 is} greater than 0 degrees and less than 90 degrees, so that the plurality of exhaust ports can An obliquely spaced space around the heat chamber surrounds the heat source Exhaust gas formed in a ring-shaped path of a swirl ring. The exhaust gas introduction device of claim 1, wherein the center line is perpendicular to the horizontal plane, and the first tube core line intersects the center line. The exhaust gas introduction device of claim 1, wherein the reaction chamber is formed in a semiconductor exhaust gas treatment tank, and a top cover of the semiconductor waste gas treatment tank is provided with a head cover having a conical disc-shaped inner wall surface, the inner wall surface A plurality of tube holes are formed in the upper interval, and the plurality of exhaust gas introduction tubes are respectively disposed in the tube holes. The exhaust gas introduction device of claim 1, wherein an O-ring is disposed between each of the first tube portions pivotally connected to each other and each of the exhaust gas introduction tubes.