TWM568366U - Gas chromatography device - Google Patents

Gas chromatography device Download PDF

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TWM568366U
TWM568366U TW107205868U TW107205868U TWM568366U TW M568366 U TWM568366 U TW M568366U TW 107205868 U TW107205868 U TW 107205868U TW 107205868 U TW107205868 U TW 107205868U TW M568366 U TWM568366 U TW M568366U
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Taiwan
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gas
detector
chromatography apparatus
gas chromatography
sample
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TW107205868U
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Chinese (zh)
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莫皓然
薛達偉
黃啟峰
韓永隆
郭俊毅
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研能科技股份有限公司
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Priority to TW107205868U priority Critical patent/TWM568366U/en
Publication of TWM568366U publication Critical patent/TWM568366U/en

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Abstract

A gas chromatography apparatus includes a gas route system, a sample injecting system, a separating system, a temperature controlling system, a detecting system, and a recording system. The separating system includes a separating flow route, and the separating flow route is formed by stacking plural flow route units manufactured by semiconductor manufacturing process. Each flow route unit is produced by forming a forming layer on a bottom substrate, followed by stacking the upper substrate on the forming layer, wherein a continuous, extended, circulated and connected gas-guiding passage forms in the forming layer. A filling material is disposed in the gas-guiding passage, thereby a to-be-tested sample flowing into the separating flow route is drawn by an adsorption force of the filling material. Since the adsorption force between the filling material and the different compounds are different, each compound contained in the to-be-tested sample has a specific flow speed, which is different from the others. Consequently, the compounds contained in the to-be-tested sample are gradually separated from the others within the separating flow route.

Description

氣相層析設備Gas chromatography equipment

本案關於一種氣相層析設備,尤指一種在有機化學中對易於揮發而不發生分解的化合物進行分離與分析之氣相層析設備。The present invention relates to a gas chromatography apparatus, and more particularly to a gas chromatography apparatus for separating and analyzing a compound which is easy to volatilize without decomposition in organic chemistry.

氣相層析 (gas chromatography, GC) 在有機化學中,是一種用於分離、純化易揮發、熱穩定性佳化合物的技術,都是藉由動相 (mobile phase) 和靜相 (stationary phase) 互相作用,使混合物所含成份在系統內有不同的流速,而達到分離的目的。Gas chromatography (GC) In organic chemistry, a technique for separating and purifying volatile, thermally stable compounds, both by mobile phase and stationary phase. Interactions allow the components of the mixture to have different flow rates within the system for separation purposes.

然而,目前氣相層析儀型號及種類很多,雖其外形及構造有所不同,但通常由下列6個基本系統所組成:(1)氣路系統、(2)樣品注入系統、(3)分離系統、(4)溫控系統、(5)偵測系統以及(6)紀錄系統,如此構成體積較大的儀器設備,此乃由於在分離系統中需要靠一層析管柱(column)來進行樣品各成份的分離。層析管柱是氣體層析儀的心臟,是因為層析管柱效率與管柱長度、內徑與膜厚有關。管柱之長度越長、內徑與膜厚越小,分析效果越好,所以一般氣相層析儀之層析管柱是採用非常長的設置。然由於層析管柱需放置於溫控系統中以保持恆溫操作,如此層析管柱長度就會影響到溫控系統體積設置,所以目前層析管柱採以多個繞環圈之設置以縮減長度,盡量縮小溫控系統體積之設置。然而,目前氣相層析儀之層析管柱設置還是相當龐大佔空間。However, there are many types and types of gas chromatographs. Although their shapes and structures are different, they are usually composed of the following six basic systems: (1) pneumatic system, (2) sample injection system, and (3) Separation system, (4) temperature control system, (5) detection system and (6) recording system, thus forming a large-scale instrumentation, because in the separation system, it is necessary to rely on a column (column) Separation of the components of the sample is performed. The column is the heart of a gas chromatograph because the efficiency of the column is related to the length of the column, the inner diameter, and the film thickness. The longer the length of the column, the smaller the inner diameter and the film thickness, the better the analysis effect, so the chromatographic column of the gas chromatograph generally adopts a very long setting. However, since the chromatography column needs to be placed in the temperature control system to maintain the constant temperature operation, the length of the chromatography column will affect the volume setting of the temperature control system, so the current chromatography column adopts a plurality of winding ring settings. Reduce the length and minimize the size of the temperature control system. However, the current chromatographic column setup of the gas chromatograph is still quite large.

有鑑於此,要如何解決氣相層析儀之層析管柱長度設置問題,又要有效達到氣體層析分離之目的,實為本案所要研發之課題。In view of this, how to solve the problem of the length setting of the chromatographic column of the gas chromatograph, and effectively achieve the purpose of gas chromatography separation, is the subject of research and development in this case.

本案之主要目的係提供一種氣相層析設備,透過以半導體製程製出分離系統,而分離系統由多個流路單元所架構出連續延伸環路之導氣通路,且導氣通路內設置填充材,藉以使具有大量化合物的受測樣品在通過導氣通路時,利用填充材對於受測樣品不同成份的化合物的吸附力不同,吸附力高的化合物流速會越來越慢,吸附力較低的化合物流速降低的趨勢較小,不同的流速將使得不同的化合物逐漸分離,達到氣體層析分離的目的,再透過偵測器分析已分離之各受測樣品的成份及濃度。如此透過微小化的半導體製程,將分離系統微型化,再透過微型的泵浦提升受測樣品的分離速度,可提升檢測效果及效率。The main purpose of the present invention is to provide a gas chromatography apparatus for manufacturing a separation system by a semiconductor process, and the separation system is constructed by a plurality of flow path units to form a gas passage of a continuously extending loop, and a filling is provided in the gas guiding passage. Material, so that when the sample with a large number of compounds passes through the gas guiding path, the adsorption force of the filler is different for the compounds of different components of the sample to be tested, and the compound with high adsorption force will be slower and slower, and the adsorption force is lower. The tendency of the compound flow rate to decrease is small, and the different flow rates will gradually separate the different compounds to achieve the purpose of gas chromatography separation, and then analyze the composition and concentration of each sample to be separated through a detector. In this way, through the miniaturized semiconductor process, the separation system is miniaturized, and the separation speed of the sample to be tested is increased by the micro pump, thereby improving the detection effect and efficiency.

本案之一廣義實施態樣為一種氣相層析設備,包含:一氣路系統,由一載體氣體供應源及一穩壓恆流裝置透過一管路連接而導出流速穩定之載體氣體;一樣品注入系統,由一注入裝置透過該氣路系統之該管路連接而導出受測樣品;一分離系統,包含一分離流路及一填充材,該分離流路連通該氣路系統之該管路,且該分離流路係由半導體製程製出之複數個流路單元堆疊組成,每個流路單元係由一底基材上製出一成形層再堆疊一上基材所構成,且於該成形層生成出一連續延伸環路連通之導氣通路,該上基材並生成出一導氣入口,連通於該導氣通路一端,以及該底基材生成一導氣出口,連通於該導氣通路另一端,且該底層之流路單元堆疊該上層之流路單元,以位於該上層之流路單元之該導氣出口連通位於該底層之流路單元之該導氣通路,促使堆疊的每個流路單元之該導氣通路得以相互連通,以及該填充材設置於該分離流路之該導氣通路中; 一溫控系統,供該分離系統置設其中,以對該分離系統維持一操作溫度,並控制在一定溫度下進行該受測樣品之分離操作。一偵測系統,該偵測系統包含一偵測腔室及一偵測器,該偵測腔室連接該分離系統之該導氣出口,該偵測器設置於該偵測腔室內;一紀錄系統,該紀錄系統連接該偵測系統之該偵測器,供以收集該偵測器之訊號進行氣體層相處理分析;藉此,該氣路系統之該載體氣體及該樣品注入系統所注入之該受測樣品由該管路導出,再由該導氣入口導入並流通於該分離流路之該導氣通路中,該受測樣品中之各成份化合物受該導氣通路中之該填充材吸附,造成該受測樣品之各成份化合物以不同速度導出於該導氣出口並進入該偵測系統之該偵測腔室中,以該偵測系統之該偵測器對該受測樣品以不同速度導出之各成份化合物作偵測,最後由該紀錄系統收集該偵測器之訊號進行該受測樣品之測定分析與紀錄。A generalized embodiment of the present invention is a gas chromatography apparatus comprising: a gas path system, a carrier gas supply source and a constant voltage constant current device are connected through a pipeline to derive a carrier gas having a stable flow rate; a system for extracting a sample to be tested by an injection device through the pipeline connection of the pneumatic system; a separation system comprising a separation flow path and a filler material, the separation flow path connecting the pipeline of the pneumatic system And the separation flow path is composed of a plurality of flow path unit stacks prepared by a semiconductor process, each flow path unit is formed by forming a forming layer on a bottom substrate and then stacking an upper substrate, and forming the upper layer. Forming a continuous extension loop in communication with the gas guiding passage, the upper substrate generates an air guiding inlet, communicates with one end of the air guiding passage, and the bottom substrate generates an air guiding outlet, and communicates with the air guiding passage The other end, and the flow path unit of the bottom layer stacks the flow path unit of the upper layer, so that the air guide outlet of the flow path unit located in the upper layer communicates with the air guide passage of the flow path unit located at the bottom layer, thereby causing each of the stacked channels The air guiding passages of the road unit are connected to each other, and the filling material is disposed in the air guiding passage of the separating flow path; a temperature control system is provided for the separating system to maintain an operating temperature of the separating system And controlling the separation operation of the sample to be tested at a certain temperature. a detection system, the detection system includes a detection chamber and a detector, the detection chamber is connected to the air outlet of the separation system, and the detector is disposed in the detection chamber; System, the recording system is connected to the detector of the detection system for performing gas layer phase processing analysis by collecting the signal of the detector; thereby, the carrier gas of the gas path system and the sample injection system are injected The sample to be tested is led out of the pipeline, and then introduced into the gas guide passage through the gas guide inlet, and the component compounds in the sample to be tested are filled by the gas guide passage. The adsorption of the material causes the components of the test sample to be exported to the gas outlet at different speeds and into the detection chamber of the detection system, and the detector of the detection system is the sample to be tested. Each component compound derived at different speeds is detected, and finally the signal of the detector is collected by the recording system to perform measurement analysis and recording of the sample to be tested.

體現本案特徵與優點的一些典型實施例將在後段的說明中詳細敘述。應理解的是本案能夠在不同的態樣上具有各種的變化,其皆不脫離本案的範圍,且其中的說明及圖示在本質上當作說明之用,而非用以限制本案。Some exemplary embodiments embodying the features and advantages of the present invention are described in detail in the following description. It is to be understood that the present invention is capable of various modifications in various embodiments, and is not intended to limit the scope of the invention.

第1圖為本案氣相層析設備之示意圖。如第1圖所示,本案提供一種氣相層析設備,包含一氣路系統1、一樣品注入系統2、一分離系統3、一溫控系統4、一偵測系統5及一紀錄系統6。本案為了使分離系統3之設置能夠微型化,且不至於影響到整個設備儀器之體積設置,本案乃將分離系統3以半導體製程製出,以解決習知氣相層析儀之層析管柱長度設置問題,又能要達到氣體層析分離之目的,下面將會予以說明。Figure 1 is a schematic view of a gas chromatography apparatus of the present invention. As shown in FIG. 1, the present invention provides a gas chromatography apparatus comprising a gas path system 1, a sample injection system 2, a separation system 3, a temperature control system 4, a detection system 5, and a recording system 6. In order to make the setting of the separation system 3 miniaturized and not affect the volume setting of the entire equipment, the present invention is to manufacture the separation system 3 in a semiconductor process to solve the chromatographic column of the conventional gas chromatograph. The problem of length setting can also achieve the purpose of gas chromatography separation, which will be explained below.

上述之氣路系統1包含一載體氣體供應源11、一穩壓恆流裝置12、一管路13及一泵浦14,載體氣體供應源11為提供載體氣體之來源,泵浦14設置於管路13中,而載體氣體供應源11及穩壓恆流裝置12透過管路13連接,再由連接在管路13上之泵浦14導出載體氣體供應源11所提供之載體氣體,其中載體氣體供應源11所提供之載體氣體必須是化學惰性,常用載體氣體為氮(N 2)、氬(Ar)、氦(He)、氫(H 2)及二氧化碳(CO 2)等。至於選用何種載體氣體通常由偵測系統5之偵測器52來決定,而載體氣體供應源11一般為高壓鋼瓶,由於載體氣體的流速是影響層析分離及定性分析的重要參數之一,因此為要求載體氣流的流速穩定,載體氣體供應源11需要使用穩壓恆流裝置12來減壓及恆流保持流速穩定。穩壓恆流裝置12包含一壓力調節器121及一流量控制閥122,以調節載體氣體供應源11所提供載體氣體在管路13中保持流速穩定,再由連接在管路13上泵浦14導出流速穩定之載體氣體。 The gas path system 1 includes a carrier gas supply source 11, a constant voltage constant current device 12, a pipeline 13 and a pump 14, the carrier gas supply source 11 is a source for providing a carrier gas, and the pump 14 is disposed in the tube. In the path 13, the carrier gas supply source 11 and the constant voltage constant current device 12 are connected through the pipeline 13, and the carrier gas supplied from the carrier gas supply source 11 is guided by the pump 14 connected to the pipeline 13, wherein the carrier gas The carrier gas supplied from the supply source 11 must be chemically inert. The usual carrier gases are nitrogen (N 2 ), argon (Ar), helium (He), hydrogen (H 2 ), and carbon dioxide (CO 2 ). The carrier gas is generally determined by the detector 52 of the detection system 5, and the carrier gas supply source 11 is generally a high-pressure cylinder. Since the flow rate of the carrier gas is one of the important parameters affecting chromatographic separation and qualitative analysis, Therefore, in order to stabilize the flow rate of the carrier gas stream, the carrier gas supply source 11 needs to use the constant voltage constant current device 12 for decompression and constant current to maintain the flow rate stable. The constant voltage constant current device 12 includes a pressure regulator 121 and a flow control valve 122 for regulating the carrier gas supplied from the carrier gas supply source 11 to maintain a stable flow rate in the pipeline 13, and then pumping the pipeline 13 to the pipeline 13 A carrier gas having a stable flow rate is derived.

第7圖為本案氣相層析設備之泵浦分解示意圖。請參閱第7圖,本案氣相層析設備之特色為能縮減分離系統3之體積,其中之一原因係由於上述之泵浦14採用一微型化之泵浦14,此泵補14為一氣體泵浦,包含有依序堆疊之噴氣孔片141、腔體框架142、致動體143、絕緣框架144及導電框架145。其中噴氣孔片141包含了複數個支架141a、一懸浮片141b及一中空孔洞141c,懸浮片141b可彎曲振動,複數個支架141a鄰接於懸浮片141b的周緣,本實施例中,支架141a其數量為4個,分別鄰接於懸浮片141b的4個角落,但不此以為限,而中空孔洞141c形成於懸浮片141b的中心位置;腔體框架142承載疊置於懸浮片141b上,致動體143承載疊置於腔體框架142上,並包含了一壓電載板143a、一調整共振板143b、一壓電板143c,其中,壓電載板143a承載疊置於腔體框架142上,調整共振板143b承載疊置於壓電載板143a上,壓電板143c承載疊置於調整共振板143b上,供施加電壓後發生形變以帶動壓電載板143a及調整共振板143b進行往復式彎曲振動;絕緣框架144則是承載疊置於致動體143之壓電載板143a上,導電框架145承載疊置於絕緣框架144上,其中,致動體143、腔體框架142及該懸浮片141b之間形成一共振腔室146,其中,調整共振板143b的厚度大於壓電載板143a的厚度。Figure 7 is a schematic diagram of pump decomposition of the gas chromatography apparatus of the present invention. Referring to Fig. 7, the gas chromatography apparatus of the present invention is characterized in that the volume of the separation system 3 can be reduced, one of the reasons is that since the pump 14 uses a miniaturized pump 14, the pumping 14 is a gas. The pump includes a gas jet sheet 141, a cavity frame 142, an actuating body 143, an insulating frame 144, and a conductive frame 145 which are sequentially stacked. The air vent 141 includes a plurality of brackets 141a, a suspension piece 141b and a hollow hole 141c. The suspension piece 141b is flexibly vibrated, and the plurality of brackets 141a are adjacent to the circumference of the suspension piece 141b. In this embodiment, the number of the brackets 141a is There are four, respectively, adjacent to the four corners of the suspension piece 141b, but not limited thereto, and the hollow hole 141c is formed at the center position of the suspension piece 141b; the cavity frame 142 is carried on the suspension piece 141b, and the actuating body The 143 is stacked on the cavity frame 142 and includes a piezoelectric carrier 143a, an adjustment resonator 143b, and a piezoelectric plate 143c. The piezoelectric carrier 143a is stacked on the cavity frame 142. The adjustment resonance plate 143b is carried on the piezoelectric carrier 143a, and the piezoelectric plate 143c is placed on the adjustment resonance plate 143b, and is deformed after applying a voltage to drive the piezoelectric carrier 143a and the adjustment resonance plate 143b to reciprocate. Bending vibration; the insulating frame 144 is carried on the piezoelectric carrier 143a stacked on the actuating body 143, and the conductive frame 145 is stacked on the insulating frame 144, wherein the actuating body 143, the cavity frame 142 and the suspension Form a total between the pieces 141b The vibration chamber 146, wherein the thickness of the adjustment resonance plate 143b is larger than the thickness of the piezoelectric carrier 143a.

再請參閱第8A圖至第8C圖,第8A圖為第7圖之泵浦的剖面示意圖,第8B圖、第8C圖為第8A圖所示之本案之泵浦14之作動示意圖。請先參閱第8A圖,泵浦14透過支架141a使泵浦14設置於管路13中,噴氣孔片141與管路13兩者之間形成氣流腔室147;請再參閱第8B圖,當施加電壓於致動體143之壓電板143c時,壓電板143c因壓電效應開始產生形變並同步帶動調整共振板143b與壓電載板143a,此時,噴氣孔片141會因亥姆霍茲共振(Helmholtz resonance)原理一起被帶動,使得致動體143向上移動。由於致動體143向上位移,使得噴氣孔片141與管路13之間的氣流腔室147的容積增加,其內部氣壓形成負壓,於泵浦14外的氣體將因為壓力梯度由噴氣孔片141的支架141a與管路13之間的空隙進入氣流腔室147並進行集壓;最後請參閱第8C圖,氣體不斷地進入氣流腔室147內,使氣流腔室147內的氣壓形成正壓,此時,致動體143受電壓驅動向下移動,壓縮氣流腔室147的容積,並且推擠氣流腔室147內氣體,使氣體得以開始輸送。Referring again to FIGS. 8A to 8C, FIG. 8A is a schematic cross-sectional view of the pump of FIG. 7, and FIG. 8B and FIG. 8C are diagrams showing the operation of the pump 14 of the present invention shown in FIG. 8A. Referring to FIG. 8A, the pump 14 is disposed in the pipeline 13 through the bracket 141a, and the airflow chamber 147 is formed between the air vent 141 and the pipeline 13; please refer to FIG. 8B. When a voltage is applied to the piezoelectric plate 143c of the actuator 143, the piezoelectric plate 143c starts to deform due to the piezoelectric effect and simultaneously drives the adjustment resonator plate 143b and the piezoelectric carrier 143a. At this time, the gas orifice plate 141 is caused by Helm. The Helmholtz resonance principle is driven together so that the actuating body 143 moves upward. Due to the upward displacement of the actuating body 143, the volume of the airflow chamber 147 between the air venting fins 141 and the conduit 13 is increased, the internal air pressure thereof forms a negative pressure, and the gas outside the pump 14 will be due to the pressure gradient by the air venting fins. The gap between the bracket 141a of the 141 and the conduit 13 enters the airflow chamber 147 and is concentrated; finally, referring to Fig. 8C, the gas continuously enters the airflow chamber 147, causing the air pressure in the airflow chamber 147 to form a positive pressure. At this time, the actuating body 143 is driven downward by the voltage, compresses the volume of the airflow chamber 147, and pushes the gas in the airflow chamber 147 to allow the gas to begin to be transported.

上述泵浦14為一氣體泵浦,當然本案之泵浦14也可為透過微機電製程的方式所製出的微機電系統氣體泵浦,其中,噴氣孔片141、腔體框架142、致動體143、絕緣框架144及導電框架145皆可透過面型微加工技術製成,以縮小泵浦14的體積。The pump 14 is a gas pump. Of course, the pump 14 of the present invention can also be a microelectromechanical system gas pump produced by a microelectromechanical process, wherein the gas vent 141, the cavity frame 142, and the actuation The body 143, the insulating frame 144 and the conductive frame 145 are all made by surface micromachining technology to reduce the volume of the pump 14.

上述之樣品注入系統2,由一注入裝置(未圖示,為一般常見微量注入埠(含氣化室),故在此不多贅述)透過氣路系統1之管路13連接而將樣品定量地快速注入,並瞬時氣化,以利載體氣體攜帶受測樣品進入分離系統3。受測樣品係指欲注入本案氣相層析設備以進行分離及測定之多成份化合物。The sample injection system 2 described above is calibrated by an injection device (not shown, which is a common micro-injection crucible (including a gasification chamber), so it will not be described here) through the pipeline 13 of the pneumatic system 1 to quantify the sample. The ground is rapidly injected and instantaneously vaporized to facilitate the carrier gas carrying the sample to be tested into the separation system 3. The sample to be tested refers to a multi-component compound to be injected into the gas chromatograph apparatus of the present invention for separation and measurement.

再請參閱第2A圖及第2B圖,第2A圖為第1圖之分離系統剖面示意圖,第2B圖為第1圖之分離系統之流體單元示意圖。如第2A及第2B圖所示,上述之分離系統3包含一分離流路P,由半導體製出複數個流路單元31堆疊組成,每個流路單元31係由一底基材311上製出一成形層312再堆疊一上基材313所構成,且於成形層312生成出一連續延伸環路連通之導氣通路314,上基材313並生成出一導氣入口313a,連通於導氣通路314一端,以及底基材311生成一導氣出口311a,連通於導氣通路314另一端,且底層之流路單元31堆疊上層之流路單元31,以位於上層之流路單元31之導氣出口311a連通位於底層之流路單元31之導氣入口313a,促使堆疊的每個流路單元31之導氣通路314得以相互連通,以構成該分離流路P,而分離流路P中包含一填充材32,定置於導氣通路314中,以構成一氣體層析流路。Referring again to FIGS. 2A and 2B, FIG. 2A is a cross-sectional view of the separation system of FIG. 1, and FIG. 2B is a schematic diagram of the fluid unit of the separation system of FIG. As shown in FIGS. 2A and 2B, the above-described separation system 3 includes a separation flow path P composed of a plurality of semiconductor flow path units 31, and each flow path unit 31 is formed from a base substrate 311. A forming layer 312 is further formed by stacking an upper substrate 313, and a continuous extending loop-connecting gas guiding passage 314 is formed in the forming layer 312, and the upper substrate 313 is formed to form a gas guiding inlet 313a for communicating with the gas guiding gas. One end of the passage 314 and the bottom substrate 311 form a gas outlet 311a communicating with the other end of the gas guide passage 314, and the flow path unit 31 of the bottom layer is stacked with the flow path unit 31 of the upper layer to guide the flow path unit 31 located at the upper layer. The gas outlet 311a communicates with the gas inlet 313a of the flow path unit 31 located at the bottom layer, and causes the gas guide passages 314 of each flow path unit 31 of the stack to communicate with each other to constitute the separation flow path P, and the separation flow path P includes A filler material 32 is disposed in the gas guiding passage 314 to form a gas chromatography flow path.

第3圖至第5圖為本案分離系統之填充材設置於導氣通路中不同實施示意圖。如第3圖所示,上述之填充材32可為具有吸附性之多孔聚合物32A,或是填充材32可為具有吸附性之分子篩材料32B,並以填充的方式設置於導氣通路314中。此外,如第4圖所示,填充材32亦可為一填充載體32D上覆蓋均勻具有吸附功能之固定液膜32C,填充載體32D填充設置於導氣通路314中,此填充載體32D可為矽的氧化物,其表面具有羥基(-OH)得將固定液膜32C植上。以及如第5圖所示,填充材32也可為固定液膜32C經由塗佈(coating)方式設置於導氣通路314的內壁表面而附著,或者可為以濺鍍(sputtering)方式設置於導氣通路314的內壁表面而附著。3 to 5 are schematic views showing different implementations of the filling material of the separation system of the present invention disposed in the gas guiding passage. As shown in FIG. 3, the filler 32 described above may be an adsorbent porous polymer 32A, or the filler 32 may be an adsorbent molecular sieve material 32B and disposed in the gas guiding passage 314 in a filling manner. . In addition, as shown in FIG. 4, the filling material 32 may be a fixed liquid film 32C which is uniformly covered with a filling function on the filling carrier 32D, and the filling carrier 32D is filled and disposed in the air guiding passage 314, and the filling carrier 32D may be a crucible. The oxide has a hydroxyl group (-OH) on its surface to implant the fixed liquid film 32C. As shown in FIG. 5, the filler 32 may be attached to the inner wall surface of the air guiding passage 314 via a coating method, or may be disposed in a sputtering manner. The inner wall surface of the air guiding passage 314 is attached.

上述之溫控系統4,供分離系統3置設其中,以對分離系3統維持一操作溫度,並控制在一定溫度下進行受測樣品之分離操作。此外,亦可透過溫控系統4於氣體分離動作時,採用逐步升溫的動作,如將溫度將由20℃逐漸升溫至200℃,來提升分離氣體的效果。The above temperature control system 4 is provided for the separation system 3 to maintain an operating temperature for the separation system 3 and to control the separation operation of the sample to be tested at a certain temperature. In addition, the temperature control system 4 can also be used to gradually increase the temperature during the gas separation operation, such as gradually increasing the temperature from 20 ° C to 200 ° C to enhance the separation gas effect.

上述之偵測系統5包含一偵測腔室51及一偵測器52,偵測腔室51係連接分離系統3之導氣出口311a。The detection system 5 includes a detection chamber 51 and a detector 52. The detection chamber 51 is connected to the air outlet 311a of the separation system 3.

上述之紀錄系統6連接偵測系統5之偵測器52,供以收集偵測器52之訊號以進行氣體層相處理分析。The above-mentioned recording system 6 is connected to the detector 52 of the detection system 5 for collecting the signals of the detector 52 for gas layer phase processing analysis.

第6圖為本案分離系統之層析分離示意圖。由上述說明得知,本案之氣相層析設備乃將分離系統3採以半導體製程來製出,氣路系統1將載體氣體以穩定流速導入管路13中,以及樣品注入系統2將受測樣品定量快速注入管路13中,而管路13連接到分離系統3之導氣入口313a中,並由泵浦14輸送載體氣體及受測樣品導入導氣入口313a流通於導氣通路314中。如第6圖所示,受測樣品及載體氣體之混合氣體將(於沿著如圖所示箭頭之方向流動時)受導氣通路314上填充材32之吸附,由於填充材32對於受測樣品中的每種化合物的吸附力皆不同,因此不同的化合物於導氣通路314內的速度會產生差異,吸附力較大的化合物其速度較慢,吸附力較小的化合物其速度較快,因此受測樣品內所包含的各成份化合物於導氣通路314流動時,會因受到填充材32之吸附而逐漸分離開來,使得受測樣品內所包含的各成份之化合物以不同速率導出於導氣出口311a,並進入偵測系統5之偵測腔室51中,再以偵測系統5之偵測器52對受測樣品之各成份化合物之不同導出速率作偵測,最後由紀錄系統6收集偵測器52之訊號進行受測樣品之氣相層析處理之測定分析與紀錄,以便將已分離之氣體做檢測,分析受測樣品中各氣體中所包含之氣體成份及濃度。如此分離系統3採以半導體製程來製出,不僅可微小化,解決習知氣相層析儀之層析管柱長度設置問題、取代層析管柱,又能達到氣體層析分離之目的,供產業上利用。Figure 6 is a schematic diagram of chromatographic separation of the separation system of the present invention. It is known from the above description that the gas chromatography apparatus of the present invention produces the separation system 3 by a semiconductor process, the gas path system 1 introduces the carrier gas into the line 13 at a steady flow rate, and the sample injection system 2 is tested. The sample is metered into the rapid injection line 13, and the line 13 is connected to the gas inlet 313a of the separation system 3, and the carrier gas is supplied from the pump 14 and the sample to be tested is introduced into the gas inlet 313a to flow through the gas guiding passage 314. As shown in Fig. 6, the mixed gas of the sample to be tested and the carrier gas will be (by flowing in the direction of the arrow as shown) by the filler 32 on the gas guiding passage 314, since the filler 32 is tested The adsorption capacity of each compound in the sample is different, so the speed of different compounds in the gas guiding passage 314 will be different, the compound with larger adsorption force is slower, and the compound with smaller adsorption force is faster. Therefore, when the component compounds contained in the sample to be tested flow in the gas guiding passage 314, they are gradually separated by the adsorption of the filler 32, so that the compounds of the components contained in the sample to be tested are derived at different rates. The gas outlet 311a enters the detection chamber 51 of the detection system 5, and the detector 52 of the detection system 5 detects the different export rate of each component of the sample to be tested, and finally the recording system 6 Collecting the signal of the detector 52 to perform the measurement analysis and recording of the gas chromatographic processing of the sample to be used for detecting the separated gas, and analyzing the gas composition and concentration contained in each gas in the sample to be tested. The separation system 3 is produced by a semiconductor process, which can not only be miniaturized, but also solve the problem of setting the length of the chromatography column of the conventional gas chromatograph, replacing the chromatography column, and achieving the purpose of gas chromatography separation. For industrial use.

上述之偵測器52可以是一熱傳導偵測器(TCD)、火焰離子化偵測器(FID)、電子捕獲偵測器(ECD)、火焰光量偵測器(FPD)、熱離化偵測器(TSD)、紅外線偵測器(IR)、質譜儀(MS)或是核磁共振波譜儀(NMR)等其中任一種,可將分離系統3所流出之受測樣品分離成份和濃度變化等資料轉變成可測量的電子信號,作為定性及定量分析的資訊。The detector 52 can be a heat conduction detector (TCD), a flame ionization detector (FID), an electron capture detector (ECD), a flame quantity detector (FPD), and thermal ionization detection. (TSD), infrared detector (IR), mass spectrometer (MS) or nuclear magnetic resonance spectrometer (NMR), etc., can separate the components and concentration changes of the sample to be separated from the separation system 3 Turn into a measurable electronic signal for information on qualitative and quantitative analysis.

綜上所述,本案所提供之氣相層析設備,利用半導體製程製出分離系統,分離系統係由多個流路單元所架構出連續延伸環路之導氣通路,且導氣通路內設置填充材,得以使具有大量化合物的受測樣品在通過導氣通路時,藉由填充材對於受測樣品所含不同成份的化合物的吸附力不同,即吸附力高的化合物流速會越來越慢,吸附力較低的化合物流速降低的趨勢較小,不同的流速將使得不同的化合物逐漸分離,而達到氣體層析分離的目的,再透過偵測器分析已相互分離之各受測樣品成份及其濃度。如此透過微小化的半導體製程,將分離系統微型化,再透過微型的泵浦提升受測樣品的分離速度,可提升檢測效果及效率。In summary, the gas chromatography apparatus provided in the present invention uses a semiconductor process to produce a separation system, and the separation system is constructed by a plurality of flow path units to form a gas passage of a continuous extension loop, and the gas passage is disposed in the gas passage. The filling material enables the sample having a large amount of compound to have a different adsorption force for the compound containing different components of the sample to be tested when passing through the gas guiding passage, that is, the flow rate of the compound having a high adsorption force is slower and slower. The tendency of the lower adsorption rate of the compound with lower adsorption force is smaller. Different flow rates will gradually separate different compounds, and the purpose of gas chromatography separation is achieved, and then the components of the tested samples separated from each other are analyzed by a detector. Its concentration. In this way, through the miniaturized semiconductor process, the separation system is miniaturized, and the separation speed of the sample to be tested is increased by the micro pump, thereby improving the detection effect and efficiency.

本案得由熟知此技術之人士任施匠思而為諸般修飾,然皆不脫如附申請專利範圍所欲保護者。This case has been modified by people who are familiar with the technology, but it is not intended to be protected by the scope of the patent application.

1‧‧‧氣路系統1‧‧‧ pneumatic system

11‧‧‧載體氣體供應源11‧‧‧ Carrier gas supply

12‧‧‧穩壓恆流裝置12‧‧‧Constant constant current device

121‧‧‧壓力調節器121‧‧‧pressure regulator

122‧‧‧流量控制閥122‧‧‧Flow control valve

13‧‧‧管路13‧‧‧ pipeline

14‧‧‧泵浦14‧‧‧ pump

141‧‧‧噴氣孔片141‧‧ ‧Hoop film

141a‧‧‧支架141a‧‧‧ bracket

141b‧‧‧懸浮片141b‧‧‧suspension tablets

141c‧‧‧中空孔洞141c‧‧‧ hollow holes

142‧‧‧腔體框架142‧‧‧ cavity frame

143‧‧‧致動體143‧‧‧Acoustic body

143a‧‧‧壓電載板143a‧‧‧Piezo carrier

143b‧‧‧調整共振板143b‧‧‧Adjusting the resonance plate

143c‧‧‧壓電板143c‧‧ ‧thin plate

144‧‧‧絕緣框架144‧‧‧Insulation frame

145‧‧‧導電框架145‧‧‧Electrical frame

146‧‧‧共振腔室146‧‧‧Resonance chamber

147‧‧‧氣流腔室147‧‧‧Airflow chamber

2‧‧‧樣品注入系統2‧‧‧ Sample Injection System

3‧‧‧分離系統3‧‧‧Separation system

P‧‧‧分離流路P‧‧‧Separate flow path

31‧‧‧流路單元31‧‧‧Flow unit

311‧‧‧底基材311‧‧‧ bottom substrate

311a‧‧‧導氣出口311a‧‧‧Air outlet

312‧‧‧成形層312‧‧‧ Forming layer

313‧‧‧上基材313‧‧‧Upper substrate

313a‧‧‧導氣入口313a‧‧‧ gas inlet

314‧‧‧導氣通路314‧‧‧Gas Guide

32‧‧‧填充材32‧‧‧Filling materials

32A‧‧‧多孔聚合物32A‧‧‧Porous polymer

32B‧‧‧分子篩材料32B‧‧‧Molecular sieve materials

32C‧‧‧固定液膜32C‧‧‧Fixed film

32D‧‧‧填充載體32D‧‧‧filled carrier

4‧‧‧溫控系統4‧‧‧temperature control system

5‧‧‧偵測系統5‧‧‧Detection system

51‧‧‧偵測腔室51‧‧‧Detection chamber

52‧‧‧偵測器52‧‧‧Detector

6‧‧‧紀錄系統6‧‧‧record system

第1圖為本案氣相層析設備之示意圖。 第2A圖為第1圖之分離系統剖面示意圖。 第2B圖為第1圖之分離系統之流體單元示意圖。 第3圖至第5圖為本案分離系統之填充材設置於導氣通路中不同實施示意圖。 第6圖為本案分離系統之層析分離示意圖。 第7圖為本案氣相層析設備之泵浦分解示意圖。 第8A圖為第7圖之泵浦的剖面示意圖。 第8B圖、第8C圖為第8A圖之泵浦的作動示意圖。Figure 1 is a schematic view of a gas chromatography apparatus of the present invention. Figure 2A is a schematic cross-sectional view of the separation system of Figure 1. Figure 2B is a schematic diagram of the fluid unit of the separation system of Figure 1. 3 to 5 are schematic views showing different implementations of the filling material of the separation system of the present invention disposed in the gas guiding passage. Figure 6 is a schematic diagram of chromatographic separation of the separation system of the present invention. Figure 7 is a schematic diagram of pump decomposition of the gas chromatography apparatus of the present invention. Fig. 8A is a schematic cross-sectional view of the pump of Fig. 7. Fig. 8B and Fig. 8C are schematic diagrams showing the operation of the pump of Fig. 8A.

Claims (21)

一種氣相層析設備,包含:一氣路系統,由一載體氣體供應源及一穩壓恆流裝置透過一管路連接而導出流速穩定之一載體氣體;一樣品注入系統,由一注入裝置透過該氣路系統之該管路連接而導出一受測樣品;一分離系統,包含一分離流路及一填充材,該分離流路連通該氣路系統之該管路,且該分離流路係由半導體製程製出之複數個流路單元堆疊組成,每個流路單元係由一底基材上製出一成形層再堆疊一上基材所構成,且於該成形層生成出一連續延伸環路連通之導氣通路,該上基材並生成出一導氣入口,連通於該導氣通路一端,以及該底基材生成一導氣出口,連通於該導氣通路另一端,且底層之該流路單元堆疊上層之該流路單元,以位於上層之該流路單元之該導氣出口連通位於底層之該流路單元之該導氣通路,促使堆疊的每個流路單元之該導氣通路得以相互連通,以及該填充材設置於該分離流路之該導氣通路中;一溫控系統,供該分離系統置設其中,以對該分離系統維持一操作溫度,並控制在一定溫度下進行該受測樣品之分離操作;一偵測系統,該偵測系統包含一偵測腔室及一偵測器,該偵測腔室連接該分離系統之該導氣出口,該偵測器設置於該偵測腔室內;一紀錄系統,該紀錄系統連接該偵測系統之該偵測器,供以收集該偵測器之訊號進行氣體層相處理分析;藉此,該氣路系統之該載體氣體及該樣品注入系統所注入之該受測樣品由該管路導出,再由該導氣入口導入並流通於該分離流路之該導氣通路中,該受測樣品中之各成份化合物受該導氣通路中之該填充材吸附,造成該受測樣品之各成份化合物以不同速度導出於該導氣出口並進入 該偵測系統之該偵測腔室中,以該偵測系統之該偵測器對該受測樣品以不同速度導出之各成份化合物作偵測,最後由該紀錄系統收集該偵測器之訊號進行該受測樣品之測定分析與紀錄。 A gas chromatography apparatus comprising: a gas path system, wherein a carrier gas supply source and a constant voltage constant current device are connected through a pipeline to derive a flow rate stable carrier gas; a sample injection system is passed through an injection device The pipeline of the gas path system is connected to derive a sample to be tested; a separation system includes a separation flow path and a filler material, the separation flow path is connected to the pipeline of the gas path system, and the separation flow path is The plurality of flow path units are formed by a semiconductor process, and each flow path unit is formed by forming a forming layer on a base substrate and then stacking an upper substrate, and forming a continuous extending ring in the forming layer. a conductive gas passage connected to the substrate, the upper substrate generates a gas guiding inlet, communicates with one end of the gas guiding passage, and the bottom substrate generates an air guiding outlet, communicates with the other end of the air guiding passage, and the bottom layer The flow path unit of the upper layer of the flow path unit is connected to the air guide passage of the flow path unit at the bottom layer by the air guide outlet of the flow path unit located at the upper layer, thereby promoting the guide of each flow path unit of the stack Gas pass Being in communication with each other, and the filler material is disposed in the gas guiding passage of the separation flow path; a temperature control system is provided for the separation system to maintain an operating temperature of the separation system and controlled at a certain temperature Performing a separation operation of the sample to be tested; a detection system comprising a detection chamber and a detector, the detection chamber being connected to the air outlet of the separation system, the detector setting In the detection chamber, a recording system is connected to the detector of the detection system for performing gas layer phase processing analysis by collecting signals of the detector; thereby, the gas path system The carrier gas and the sample to be injected injected by the sample injection system are led out from the pipeline, and then introduced into the gas guide passage through the gas guide inlet, and the component compounds in the sample to be tested are Adsorbed by the filler material in the gas guiding passage, causing the components of the test sample to be derived at the gas outlet and entering at different speeds. In the detection chamber of the detection system, the detector of the detection system detects the component compounds derived from the sample at different speeds, and finally the detector system collects the detectors. The signal is analyzed and recorded for the measurement of the sample to be tested. 如申請專利範圍第1項所述之氣相層析設備,其中該填充材為具有吸附性之多孔聚合物,填充設置於該導氣通路中。 The gas chromatography apparatus according to claim 1, wherein the filler is a porous polymer having adsorptivity, and the filling is disposed in the gas guiding passage. 如申請專利範圍第1項所述之氣相層析設備,其中該填充材為具有吸附性之分子篩材料,填充設置於該導氣通路中。 The gas chromatography apparatus according to claim 1, wherein the filler is an adsorbent molecular sieve material, and the filling is disposed in the gas guiding passage. 如申請專利範圍第1項所述之氣相層析設備,其中該填充材為填充載體上覆蓋均勻具有吸附功能之固定液膜,填充設置於該導氣通路中。 The gas chromatography apparatus according to claim 1, wherein the filler material is a fixed liquid film covering the uniformity of the filling carrier and having an adsorption function, and the filling is disposed in the gas guiding passage. 如申請專利範圍第4項所述之氣相層析設備,其中該填充載體為矽的氧化物,表面具有烴基供以將該固定液膜植上。 The gas chromatography apparatus according to claim 4, wherein the filled carrier is an oxide of cerium, and a hydrocarbon group is provided on the surface to implant the fixed liquid film. 如申請專利範圍第1項所述之氣相層析設備,其中該填充材為固定液膜直接塗佈在該分離流路之該導氣通路之內壁表面附著。 The gas chromatography apparatus according to claim 1, wherein the filler material is directly adhered to a surface of the inner wall of the gas guiding passage of the separation flow path. 如申請專利範圍第1項所述之氣相層析設備,其中該填充材為固定液膜直接濺鍍在該分離流路之該導氣通路之內壁表面附著。 The gas chromatography apparatus according to claim 1, wherein the filler material is directly adhered to the inner wall surface of the gas guiding passage of the separation flow path. 如申請專利範圍第1項所述之氣相層析設備,其中該氣路系統包含一泵浦,設置於該管路中,以控制導出流速穩定之該載體氣體及該受測樣品進入該分離流路之該導氣通路中。 The gas chromatography apparatus according to claim 1, wherein the gas path system comprises a pump disposed in the pipeline to control the flow rate of the carrier gas and the sample to be separated into the separation. The gas path of the flow path. 如申請專利範圍第1項所述之氣相層析設備,其中該注入系統之該注入裝置係供以將該受測樣品定量地快速注入並瞬時氣化。 The gas chromatography apparatus of claim 1, wherein the injection device of the injection system is configured to quantitatively inject the sample to be measured and instantaneously vaporize. 如申請專利範圍第8項所述之氣相層析設備,其中該泵浦為一微機電系統泵浦。 The gas chromatography apparatus of claim 8, wherein the pump is a MEMS pump. 如申請專利範圍第8項所述之氣相層析設備,其中該泵浦為一氣體泵浦,其包含:一噴氣孔片,包含複數個支架、一懸浮片及一中空孔洞,該懸浮片 可彎曲振動,該複數個支架鄰接於該懸浮片周緣並提供該懸浮片彈性支撐,而該中空孔洞形成於懸浮片的中心位置,該噴氣孔片透過複數個支架設置定位該管路中,並與該導氣入口之間形成一氣流腔室,且該複數個支架及該懸浮片之間形成至少一空隙;一腔體框架,承載疊置於該懸浮片上;一致動體,承載疊置於該腔體框架上,以接受電壓而產生往復式地彎曲振動;一絕緣框架,承載疊置於該致動體上;以及一導電框架,承載疊設置於該絕緣框架上;其中,該致動體、該腔體框架及該懸浮片之間形成一共振腔室,透過驅動該致動體以帶動該噴氣孔片產生共振,使該噴氣孔片之該懸浮片產生往復式地振動位移,以造成該載體氣體及該受測樣品通過該至少一空隙進入該氣流腔室,實現該載體氣體及該受測樣品之傳輸流動。 The gas chromatography apparatus of claim 8, wherein the pump is a gas pump, comprising: a gas jet sheet comprising a plurality of brackets, a suspension sheet and a hollow hole, the suspension sheet Flexibly vibrating, the plurality of brackets are adjacent to the periphery of the suspension sheet and provide elastic support of the suspension sheet, and the hollow holes are formed at a center position of the suspension sheet, and the air vent sheet is positioned in the pipeline through a plurality of brackets, and Forming an air flow chamber with the air guide inlet, and at least one gap is formed between the plurality of brackets and the suspension piece; a cavity frame is stacked on the suspension piece; the movable body is stacked Reciprocatingly bending vibration is generated on the cavity frame by receiving a voltage; an insulating frame is stacked on the actuating body; and a conductive frame is disposed on the insulating frame; wherein the actuating frame Forming a resonant cavity between the body, the cavity frame and the suspension piece, driving the actuating body to drive the air venting piece to resonate, causing the suspension piece of the air venting piece to reciprocally vibrate and displace The carrier gas and the sample to be tested enter the gas flow chamber through the at least one gap to realize the transport flow of the carrier gas and the sample to be tested. 如申請專利範圍第11項所述之氣相層析設備,其中該致動體包含:一壓電載板,承載疊置於該腔體框架上;一調整共振板,承載疊置於該壓電載板上;以及一壓電板,承載疊置於該調整共振板上,以接受電壓而驅動該壓電載板及該調整共振板產生往復式地彎曲振動。 The gas chromatography apparatus of claim 11, wherein the actuating body comprises: a piezoelectric carrier plate stacked on the cavity frame; an adjustment resonance plate, the carrier is stacked on the pressure And a piezoelectric plate stacked on the adjustment resonator plate to receive the voltage to drive the piezoelectric carrier and the adjustment resonator plate to generate reciprocating bending vibration. 如申請專利範圍第12項所述之氣相層析設備,其中該調整共振板之厚度大於該壓電載板之厚度。 The gas chromatography apparatus of claim 12, wherein the thickness of the adjustment resonator plate is greater than the thickness of the piezoelectric carrier. 如申請專利範圍第1項所述之氣相層析設備,其中該偵測器為熱傳導偵測器。 The gas chromatography apparatus of claim 1, wherein the detector is a heat conduction detector. 如申請專利範圍第1項所述之氣相層析設備,其中該偵測器為火焰離子化偵測器。 The gas chromatography apparatus of claim 1, wherein the detector is a flame ionization detector. 如申請專利範圍第1項所述之氣相層析設備,其中該偵測器為電子捕獲 偵測器。 The gas chromatography apparatus according to claim 1, wherein the detector is an electron capture Detector. 如申請專利範圍第1項所述之氣相層析設備,其中該偵測器為火焰光量偵測器。 The gas chromatography apparatus of claim 1, wherein the detector is a flame quantity detector. 如申請專利範圍第1項所述之氣相層析設備,其中該偵測器為熱離化偵測器。 The gas chromatography apparatus of claim 1, wherein the detector is a thermal ionization detector. 如申請專利範圍第1項所述之氣相層析設備,其中該偵測器為紅外線偵測器。 The gas chromatography apparatus of claim 1, wherein the detector is an infrared detector. 如申請專利範圍第1項所述之氣相層析設備,其中該偵測器為質譜儀。 The gas chromatography apparatus of claim 1, wherein the detector is a mass spectrometer. 如申請專利範圍第1項所述之氣相層析設備,其中該偵測器為核磁共振波譜儀。 The gas chromatography apparatus according to claim 1, wherein the detector is a nuclear magnetic resonance spectrometer.
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