TWI677682B - Separating system of gas chromatography device - Google Patents
Separating system of gas chromatography device Download PDFInfo
- Publication number
- TWI677682B TWI677682B TW107115323A TW107115323A TWI677682B TW I677682 B TWI677682 B TW I677682B TW 107115323 A TW107115323 A TW 107115323A TW 107115323 A TW107115323 A TW 107115323A TW I677682 B TWI677682 B TW I677682B
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- separation system
- item
- gas chromatography
- separation
- Prior art date
Links
Landscapes
- Sampling And Sample Adjustment (AREA)
- Separation Of Gases By Adsorption (AREA)
Abstract
一種氣相層析設備之分離系統,包含一分離流路,係由半導體製程製出複數個流路單元堆疊組成,該每個流路單元係由一底基材上製出一成形層再堆疊一上基材所構成,且於該成形層生成出一連續延伸環路連通之導氣通路。導氣通路中設置填充材,使得進入分離流路內的受測樣品被填充材的吸附力所牽引,受測樣品所含不同的化合物其吸附力也不同,透過受測樣品所含不同的化合物受不同的吸附力所牽引,讓受測樣品所含不同的化合物於分離流路內產生不同的流速,進而使不測樣品所含不同的化合物於分離流路內逐漸分離。A separation system of a gas chromatography device includes a separation flow path, which is composed of a plurality of flow path unit stacks made by a semiconductor process. Each flow path unit is made of a forming layer on a base substrate and then stacked one The upper base material is formed, and a continuous air circulation path is formed in the forming layer. Filling material is provided in the air guide path, so that the test sample entering the separation flow path is pulled by the adsorption force of the filling material, and different compounds contained in the test sample have different adsorption forces. It is drawn by different adsorption forces, so that different compounds contained in the test sample generate different flow rates in the separation flow path, so that different compounds contained in the test sample are gradually separated in the separation flow path.
Description
本案關於一種氣相層析設備之分離系統,尤指一種在有機化學中對易於揮發而不發生分解的化合物進行分離與分析之氣體分離系統。 This case relates to a separation system for a gas chromatography device, and in particular to a gas separation system that separates and analyzes compounds that are volatile without decomposition in organic chemistry.
氣相層析(gas chromatography,GC)在有機化學中,是一種用於分離、純化易揮發、熱穩定性佳化合物的技術,都是藉由動相(mobile phase)和靜相(stationary phase)互相作用,使混合物所含成份在系統內有不同的流速,而達到分離的目的。 Gas chromatography (GC) is a technique used in organic chemistry to separate and purify volatile and thermally stable compounds, both through the mobile phase and the stationary phase. Interaction, so that the components contained in the mixture have different flow rates in the system to achieve the purpose of separation.
然而,目前氣相層析儀型號及種類很多,雖其外形及構造有所不同,但通常由下列6個基本系統所組成:(1)氣路系統、(2)樣品注入系統、(3)分離系統、(4)溫控系統、(5)偵測系統以及(6)紀錄系統,如此構成體積較大的儀器設備,此乃由於在分離系統中需要靠一層析管柱(column)來進行樣品各成份的分離,層析管柱是氣體層析儀的心臟。因為層析管柱效率與管柱長度、內徑與膜厚有關,管柱之長度越長、內徑與膜厚越小,分析效果越好,所以一般氣相層析儀之層析管柱是採用非常長的設置,然由於層析管柱需放置溫控系統中以保持恆溫操作之溫度要求,如此層析管柱長度就會影響到溫控系統體積設置,所以目前層析管柱採以多個繞環圈之設置以縮減長度盡量縮小溫控系統體積之設置。然而,目前氣相層析儀之層析管柱設置還是相當龐大佔空間。 However, there are currently many types and types of gas chromatographs. Although their appearance and structure are different, they usually consist of the following 6 basic systems: (1) gas path system, (2) sample injection system, (3) The separation system, (4) temperature control system, (5) detection system and (6) recording system constitute a relatively large volume of equipment. This is because a chromatography column is required in the separation system. To separate the components of a sample, a chromatography column is the heart of a gas chromatograph. Because the efficiency of a chromatography column is related to the length of the column, the inner diameter and the film thickness, the longer the length of the column, the smaller the inner diameter and the film thickness, the better the analysis effect, so the chromatography column of the general gas chromatography It is a very long setting. However, because the chromatography column needs to be placed in a temperature control system to maintain the temperature requirements of constant temperature operation, the length of the chromatography column will affect the volume setting of the temperature control system. Set multiple loops to reduce the length to minimize the size of the temperature control system. However, at present, the column arrangement of gas chromatography is still quite large.
有鑑於此,要如何解決氣相層析儀之層析管柱長度設置問題,又要有效達到氣體層析分離之目的,實為本案所要研發之課題。 In view of this, how to solve the problem of setting the length of the chromatography column of the gas chromatograph and effectively achieve the purpose of gas chromatography separation is actually the subject of this case.
本案之主要目的係提供一種氣相層析設備之分離系統,透過以半導體製程製出分離系統之多個流路單元所架構出連續延伸環路之導氣通路,且導氣通路內設置填充材,藉以當具有大量混合物的受測樣品在通過導氣通路時,利用填充材對於受測樣品不同成份的化合物的吸附力不同,吸附力高的化合物流速會越來越慢,吸附力較低的化合物流速降低的趨勢較小,不同的流速將使得不同的化合物逐漸分離,達到氣體層析分離的目的,再透過偵測器去分析已分離之各受測樣品的成份及濃度,如此透過微小化的半導體製程,將分離系統微型化,再透過微型的泵浦提升受測樣品的分離速度,可提升檢測效果及效率。 The main purpose of this case is to provide a separation system for a gas chromatography device. A continuous extension loop gas guide path is constructed by a plurality of flow path units of the separation system made by a semiconductor process, and a filling material is provided in the gas guide path. Therefore, when a test sample with a large amount of mixture passes through the air-conducting path, the adsorption force of the filler on the compounds of different components of the test sample is different, and the flow rate of the compound with higher adsorption force will become slower and slower, The decreasing trend of the compound flow rate is small. Different flow rates will gradually separate different compounds to achieve the purpose of gas chromatography separation. Then the detector analyzes the components and concentrations of the separated test samples. The semiconductor process can miniaturize the separation system, and then increase the separation speed of the sample under test through a miniature pump, which can improve the detection effect and efficiency.
本案之一廣義實施態樣為一種氣相層析設備之分離系統,包含:一分離流路,係由半導體製程製出複數個流路單元堆疊組成,該每個流路單元係由一底基材上製出一成形層再堆疊一上基材所構成,且於該成形層生成出一連續延伸環路連通之導氣通路,該上基材並生成出一導氣入口,連通於該導氣通路一端,以及該底基材生成一導氣出口,連通於該導氣通路另一端,且該底層之流路單元堆疊該上層之流路單元,以位於該上層之流路單元之該導氣出口連通位於該底層之流路單元之該導氣通路,促使堆疊的每個流路單元之該導氣通路得以相互連通;以及一填充材,設置於該分離流路之該導氣通路中;藉此,受測樣品由該導氣入口導入流通於該分離流路之該導氣通路中,受測樣品受該導氣通路上該填充材以進行各成份的化合物之吸附分離,所形成 該受測樣品所含各成份化合物以不同速度導出於該導氣出口進行測定分析紀錄。 A broad implementation of this case is a separation system for a gas chromatography device, including: a separation flow path, which is composed of a stack of a plurality of flow path units made by a semiconductor process, and each flow path unit consists of a substrate A forming layer is formed on the material, and an upper substrate is stacked, and a continuous extending air circulation path is formed on the forming layer. The upper substrate generates a gas conduction inlet and communicates with the gas conduction. One end of the passage and the bottom substrate generate a gas-conducting outlet, which is connected to the other end of the gas-conducting passage, and the bottom flow path unit is stacked with the upper flow path unit to locate the gas flow in the upper flow path unit. The outlet communicates with the air conduction path of the flow path unit on the bottom layer, so that the air conduction paths of each flow path unit in the stack can communicate with each other; and a filling material is provided in the air conduction path of the separation flow path; Thereby, the test sample is introduced from the air guide inlet into the air guide passage flowing through the separation flow path, and the test sample is formed by the filling material on the air guide passage for adsorption and separation of compounds of various components. Each component compound contained in the tested sample is exported to the gas conducting outlet at different speeds for measurement and analysis records.
1‧‧‧氣路系統 1‧‧‧pneumatic system
11‧‧‧載體氣體供應源 11‧‧‧ Carrier gas supply source
12‧‧‧穩壓恆流裝置 12‧‧‧ constant voltage and constant current device
121‧‧‧壓力調節器 121‧‧‧pressure regulator
122‧‧‧流量控制閥 122‧‧‧Flow Control Valve
13‧‧‧管路 13‧‧‧pipe
14‧‧‧泵浦 14‧‧‧Pump
141‧‧‧噴氣孔片 141‧‧‧air hole film
141a‧‧‧支架 141a‧‧‧bracket
141b‧‧‧懸浮片 141b‧‧‧ Suspension tablet
141c‧‧‧中空孔洞 141c‧‧‧Hollow
142‧‧‧腔體框架 142‧‧‧cavity frame
143‧‧‧致動體 143‧‧‧actuator
143a‧‧‧壓電載板 143a‧‧‧piezoelectric carrier
143b‧‧‧調整共振板 143b‧‧‧Adjust resonance plate
143c‧‧‧壓電板 143c‧‧‧Piezoelectric plate
144‧‧‧絕緣框架 144‧‧‧Insulated frame
145‧‧‧導電框架 145‧‧‧ conductive frame
146‧‧‧共振腔室 146‧‧‧Resonant Chamber
147‧‧‧氣流腔室 147‧‧‧Airflow chamber
2‧‧‧樣品注入系統 2‧‧‧ sample injection system
3‧‧‧分離系統 3‧‧‧ separation system
P‧‧‧分離流路 P‧‧‧ Separated flow path
31‧‧‧流路單元 31‧‧‧flow unit
311‧‧‧底基材 311‧‧‧ substrate
311a‧‧‧導氣出口 311a‧‧‧Air outlet
312‧‧‧成形層 312‧‧‧forming layer
313‧‧‧上基材 313‧‧‧upper substrate
313a‧‧‧導氣入口 313a‧‧‧Air inlet
314‧‧‧導氣通路 314‧‧‧Air conduction pathway
32‧‧‧填充材 32‧‧‧filler
32A‧‧‧多孔聚合物 32A‧‧‧Porous polymer
32B‧‧‧分子篩材料 32B‧‧‧ molecular sieve material
32C‧‧‧固定液膜 32C‧‧‧Fixed liquid film
32D‧‧‧填充載體 32D‧‧‧filled carrier
4‧‧‧溫控系統 4‧‧‧Temperature Control System
5‧‧‧偵測系統 5‧‧‧ Detection System
51‧‧‧偵測腔室 51‧‧‧detection chamber
52‧‧‧偵測器 52‧‧‧ Detector
6‧‧‧紀錄系統 6‧‧‧Recording System
第1圖為本案氣相層析設備之示意圖。 Figure 1 is a schematic diagram of the gas chromatography equipment of this case.
第2A圖為第1圖之分離系統剖面示意圖。 Figure 2A is a schematic cross-sectional view of the separation system of Figure 1.
第2B圖為第1圖之分離系統之流體單元示意圖。 Figure 2B is a schematic diagram of the fluid unit of the separation system of Figure 1.
第3圖至第5圖為本案分離系統之填充材設置於導氣通路中不同實施示意圖。 3 to 5 are schematic diagrams of different implementations in which the filling material of the separation system of the present invention is arranged in the air guide passage.
第6圖為本案分離系統之層析分離示意圖。 Figure 6 shows the chromatographic separation of the separation system in this case.
第7圖為本案氣相層析設備之泵浦分解示意圖。 FIG. 7 is a pump breakdown diagram of the gas chromatography apparatus of the case.
第8A圖為第7圖之泵浦的剖面示意圖。 Figure 8A is a schematic cross-sectional view of the pump of Figure 7.
第8B圖、第8C圖為第8A圖之泵浦的作動示意圖。 Figures 8B and 8C are schematic diagrams of the operation of the pump in Figure 8A.
體現本案特徵與優點的一些典型實施例將在後段的說明中詳細敘述。應理解的是本案能夠在不同的態樣上具有各種的變化,其皆不脫離本案的範圍,且其中的說明及圖示在本質上當作說明之用,而非用以限制本案。 Some typical embodiments embodying the features and advantages of this case will be described in detail in the description in the subsequent paragraphs. It should be understood that the present case can have various changes in different aspects, all of which do not depart from the scope of the present case, and the descriptions and diagrams therein are essentially for the purpose of illustration, rather than limiting the case.
如第1圖所示,本案提供一種氣相層析設備,包含一氣路系統1、一樣品注入系統2、一分離系統3、一溫控系統4、一偵測系統5及一紀錄系統6。本案為了使分離系統3之設置能夠微型化,使其不至於影響到整個設備儀器之體積設置,本案乃將分離系統3採以半導體製程來製出,以解決習知氣相層析儀之層析管柱長度設置問題,又能要達到氣體層析分離之目的,下面將會予以說明。 As shown in FIG. 1, this case provides a gas chromatography device including a gas path system 1, a sample injection system 2, a separation system 3, a temperature control system 4, a detection system 5 and a recording system 6. In order to miniaturize the setting of the separation system 3 so that it does not affect the volume setting of the entire equipment, this case is made by using the semiconductor process to separate the layers of the conventional gas chromatograph. The problem of setting the length of the analytical column and achieving the purpose of gas chromatography separation will be explained below.
上述之氣路系統1由一載體氣體供應源11及一穩壓恆流裝置12透過一管路13連接,而再由連接在管路13上之泵浦14導出流速穩定之載體氣體,其中載體氣體供應源11所提供載體氣體必須是化學惰性,常用載體氣體為氮(N2)、氬(Ar)、氦(He)、氫(H2)及二氧化碳(CO2)等。至於選用何種載體氣體通常由偵測系統5之偵測器52來決定,而載體氣體供應源11一般為高壓鋼瓶,由於載體氣體的流速是影響層析分離及定性分析的重要參數之一,因此為要求載體氣流的流速穩定,載體氣體供應源11需要使用穩壓恆流裝置12來減壓及恆流保持流速穩定,穩壓恆流裝置12包含一壓力調節器121及一流量控制閥122,以調節載體氣體供應源11所提供載體氣體在管路13中保持流速穩定,而再由連接在管路13上之泵浦14導出流速穩定之載體氣體。 The above-mentioned gas path system 1 is connected by a carrier gas supply source 11 and a constant-voltage constant-current device 12 through a pipeline 13, and a pump 14 connected to the pipeline 13 leads to a carrier gas with a stable flow rate. The carrier gas provided by the gas supply source 11 must be chemically inert. Common carrier gases are nitrogen (N2), argon (Ar), helium (He), hydrogen (H2), and carbon dioxide (CO2). As for the choice of carrier gas, the detector 52 of the detection system 5 is usually used to determine the carrier gas. The carrier gas supply source 11 is usually a high-pressure steel cylinder. The velocity of the carrier gas is one of the important parameters affecting chromatographic separation and qualitative analysis. Therefore, in order to maintain a stable flow rate of the carrier gas, the carrier gas supply source 11 needs to use a constant voltage and constant current device 12 to reduce pressure and maintain a constant flow rate. The constant voltage and constant current device 12 includes a pressure regulator 121 and a flow control valve 122. In order to adjust the carrier gas provided by the carrier gas supply source 11 to maintain a stable flow rate in the pipeline 13, the pump 14 connected to the pipeline 13 leads to a stable flow velocity of the carrier gas.
請參閱第7圖至第8C圖,本案氣相層析設備之特色為能縮減分離系統3之體積,其中之一原因係由於上述之泵浦14採用一微型化之泵浦14,此泵浦14為一氣體泵浦,包含有依序堆疊之噴氣孔片141、腔體框架142、致動體143、絕緣框架144及導電框架145。其中噴氣孔片141包含了複數個支架141a、一懸浮片141b及一中空孔洞141c,懸浮片141b可彎曲振動,複數個支架141a鄰接於懸浮片141b的周緣,本實施例中,支架141a其數量為4個,分別鄰接於懸浮片141b的4個角落,但不此以為限,而中空孔洞141c形成於懸浮片141b的中心位置;腔體框架142承載疊置於懸浮片141b上,致動體143承載疊置於腔體框架142上,並包含了一壓電載板143a、一調整共振板143b、一壓電板143c,其中,壓電載板143a承載疊置於腔體框架142上,調整共振板143b承載疊置於壓電載板143a上,壓電板143c承載疊置於調整共振板143b上,供施加電壓後發生形變以帶動壓電載板143a及調整共振板143b進行往復式彎曲 振動;絕緣框架144則是承載疊置於致動體143之壓電載板143a上,導電框架145承載疊置於絕緣框架144上,其中,致動體143、腔體框架142及該懸浮片141b之間形成一共振腔室146,其中,調整共振板143b的厚度大於壓電載板143a的厚度。 Please refer to Fig. 7 to Fig. 8C. The feature of the gas chromatography equipment in this case is that it can reduce the volume of the separation system 3. One of the reasons is that the above-mentioned pump 14 uses a miniaturized pump 14. This pump 14 is a gas pump, which includes an air jet hole sheet 141, a cavity frame 142, an actuating body 143, an insulating frame 144, and a conductive frame 145 which are sequentially stacked. The air jet hole sheet 141 includes a plurality of brackets 141a, a suspension sheet 141b, and a hollow hole 141c. The suspension sheet 141b can be flexibly vibrated, and the plurality of brackets 141a are adjacent to the periphery of the suspension sheet 141b. In this embodiment, the number of the brackets 141a There are four, which are respectively adjacent to the four corners of the suspension sheet 141b, but not limited to this, and a hollow hole 141c is formed at the center position of the suspension sheet 141b; the cavity frame 142 is carried on the suspension sheet 141b to actuate the body The 143 carrier is stacked on the cavity frame 142, and includes a piezoelectric carrier plate 143a, an adjustment resonance plate 143b, and a piezoelectric plate 143c. The piezoelectric carrier 143a is stacked on the cavity frame 142. The adjusting resonance plate 143b is stacked on the piezoelectric carrier plate 143a, and the piezoelectric plate 143c is stacked on the adjusting resonance plate 143b, and is deformed after the voltage is applied to drive the piezoelectric carrier plate 143a and the adjustment resonance plate 143b for reciprocation. bending Vibration; the insulating frame 144 is carried on the piezoelectric carrier plate 143a stacked on the actuating body 143, and the conductive frame 145 is carried on the insulating frame 144, wherein the actuating body 143, the cavity frame 142 and the suspension sheet A resonance cavity 146 is formed between 141b, wherein the thickness of the adjustment resonance plate 143b is greater than the thickness of the piezoelectric carrier plate 143a.
再請參閱第8A圖至第8C圖,第8B圖、第8C圖為第8A圖所示之本案之泵浦14之作動示意圖。請先參閱第8A圖,泵浦14透過支架141a使泵浦14設置於管路13中,噴氣孔片141與管路13兩者之間形成氣流腔室147;請再參閱第8B圖,當施加電壓於致動體143之壓電板143c時,壓電板143c因壓電效應開始產生形變並同步帶動調整共振板143b與壓電載板143a,此時,噴氣孔片141會因亥姆霍茲共振(Helmholtz resonance)原理一起被帶動,使得致動體143向上移動,由於致動體143向上位移,使得噴氣孔片141與管路13之間的氣流腔室147的容積增加,其內部氣壓形成負壓,於泵浦14外的氣體將因為壓力梯度由噴氣孔片141的支架141a與管路13之間的空隙進入氣流腔室147並進行集壓;最後請參閱第8C圖,氣體不斷地進入氣流腔室147內,使氣流腔室147內的氣壓形成正壓,此時,致動體143受電壓驅動向下移動,將壓縮氣流腔室147的容積,並且推擠氣流腔室147內氣體,使氣體得以開始輸送。 Please refer to FIGS. 8A to 8C again. FIGS. 8B and 8C are schematic diagrams of the operation of the pump 14 in the present case shown in FIG. 8A. Please refer to FIG. 8A first, the pump 14 is arranged in the pipeline 13 through the bracket 141a, and the air flow cavity 147 is formed between the air jet orifice 141 and the pipeline 13; please refer to FIG. 8B again, when When a voltage is applied to the piezoelectric plate 143c of the actuator 143, the piezoelectric plate 143c begins to deform due to the piezoelectric effect and synchronously drives the adjustment of the resonant plate 143b and the piezoelectric carrier plate 143a. The principle of Helmholtz resonance is driven together, which causes the actuating body 143 to move upward. Due to the upward displacement of the actuating body 143, the volume of the air flow chamber 147 between the air jet hole 141 and the pipe 13 increases, and the interior The air pressure forms a negative pressure, and the gas outside the pump 14 will enter the air flow chamber 147 and collect pressure from the gap between the bracket 141a of the air jet orifice plate 141 and the pipeline 13 due to the pressure gradient; finally, refer to FIG. 8C, the gas Continuously enter the airflow chamber 147, so that the air pressure in the airflow chamber 147 forms a positive pressure. At this time, the actuator 143 is driven downward by the voltage to move, compress the volume of the airflow chamber 147, and push the airflow chamber. 147 gas, so that gas can begin to be transported.
上述泵浦14為一氣體泵浦,當然本案之泵浦14也可為透過微機電製程的方式所製出的微機電系統氣體泵浦,其中,噴氣孔片141、腔體框架142、致動體143、絕緣框架144及導電框架145皆可透過面型微加工技術製成,以縮小泵浦14的體積。 The above-mentioned pump 14 is a gas pump. Of course, the pump 14 in this case may also be a micro-electro-mechanical system gas pump manufactured by a micro-electro-mechanical process. Among them, the air jet hole sheet 141, the cavity frame 142, The body 143, the insulating frame 144, and the conductive frame 145 can be made by surface micromachining technology to reduce the volume of the pump 14.
上述之樣品注入系統2,由一注入裝置(未圖示,為一般常見微量注入埠(含氣化室),故在此不多贅述)透過氣路系統1之管路13連接而將樣品定量地快速注入,並瞬時氣化,以利載體氣攜帶受測樣品進入分離系統 3。受測樣品係指欲注入本案氣相層析設備所要分離及測定之多成份化合物。 The sample injection system 2 described above is quantified by an injection device (not shown, which is a common micro-injection port (including a gasification chamber), so it will not be repeated here) through the pipeline 13 of the gas path system 1 Ground fast injection and instantaneous gasification to facilitate carrier gas to carry the test sample into the separation system 3. The test sample refers to the multi-component compounds to be injected and separated in the gas chromatography equipment of this case.
再請參閱第2A圖及第2B圖所示,上述之分離系統3包含一分離流路P,由半導體製出複數個流路單元31堆疊組成,每個流路單元31係由一底基材311上製出一成形層312再堆疊一上基材313所構成,且於成形層312生成出一連續延伸環路連通之導氣通路314,上基材313並生成出一導氣入口313a,連通於導氣通路314一端,以及底基材311生成一導氣出口311a,連通於導氣通路314另一端,且底層之流路單元31堆疊上層之流路單元31,以位於上層之流路單元31之導氣出口311a連通位於底層之流路單元31之導氣入口313a,促使堆疊的每個流路單元31之導氣通路314得以相互連通,以構成該分離流路P,而分離流路P中包含一填充材32,定置於導氣通路314中,以構成一氣體層析流路。 Please refer to FIG. 2A and FIG. 2B again. The above separation system 3 includes a separation flow path P, which is formed by stacking a plurality of flow path units 31 made of semiconductor, and each flow path unit 31 is composed of a bottom substrate. A forming layer 312 is formed on 311, and an upper substrate 313 is stacked, and a continuous extending gas passage 314 is formed on the forming layer 312. The upper substrate 313 generates a gas guiding inlet 313a, which communicates with An air-conducting outlet 311a is generated at one end of the air-conducting path 314 and the bottom substrate 311, and communicates with the other end of the air-conducting path 314. The air-conducting outlet 311a of 31 communicates with the air-conducting inlet 313a of the flow path unit 31 located at the bottom layer, so that the air-conducting path 314 of each flow path unit 31 in the stack can communicate with each other to form the separation flow path P, and the separation flow path P contains a filling material 32 and is positioned in the gas guide passage 314 to form a gas chromatography flow path.
如第3圖所示,上述之填充材32可為具有吸附性之多孔聚合物32A,或是填充材32可為具有吸附性之分子篩材料32B,並以填充的方式設置於導氣通路314中。此外,如第4圖所示,填充材32亦可為一填充載體32D上覆蓋均勻具有吸附功能之固定液膜32C,填充載體32D填充設置於導氣通路314中,此填充載體32D可為矽的氧化物,其表面具有羥基(-OH)得將固定液膜32C植上。以及如第5圖所示,填充材32也可為固定液膜32C經由塗佈(coating)方式設置於導氣通路314的內壁表面而附著,或者可為以濺鍍(sputtering)方式設置於導氣通路314的內壁表面而附著。 As shown in FIG. 3, the above-mentioned filling material 32 may be an adsorbent porous polymer 32A, or the filling material 32 may be an adsorbent molecular sieve material 32B, and is provided in the air guiding path 314 in a filling manner. . In addition, as shown in FIG. 4, the filling material 32 can also be a fixed carrier 32D covered with a fixed liquid film 32C having an adsorption function uniformly. The filling carrier 32D is filled in the air guiding path 314, and the filling carrier 32D can be silicon. The oxide has a hydroxyl group (-OH) on its surface so that the fixed liquid film 32C can be planted. As shown in FIG. 5, the filling material 32 may be a fixed liquid film 32C attached to the inner wall surface of the air guide passage 314 through a coating method, or may be provided by a sputtering method. The air guide passage 314 is attached to the inner wall surface.
上述之溫控系統4,供分離系統3置設其中,以對分離系統3維持一操作溫度,並控制在一定溫度下進行受測樣品之分離操作。此外,亦可透過溫控系統4於氣體分離動作時,採用逐步升溫的動作,如將溫度將由20℃逐漸升溫至200℃,來提升分離氣體的效果。 The temperature control system 4 described above is provided for the separation system 3 to maintain an operating temperature for the separation system 3 and control the separation operation of the test sample at a certain temperature. In addition, the temperature control system 4 can also be used to gradually increase the temperature during the gas separation operation, such as gradually increasing the temperature from 20 ° C to 200 ° C to improve the effect of separating the gas.
上述之偵測系統5包含一偵測腔室51及一偵測器52,偵測腔室51係連接分離系統3之導氣出口311a。 The above-mentioned detection system 5 includes a detection chamber 51 and a detector 52. The detection chamber 51 is connected to the air guiding outlet 311 a of the separation system 3.
上述之紀錄系統6,連接偵測系統5之偵測器52,供以收集偵測器52之訊號進行氣體層相處理分析。 The recording system 6 described above is connected to the detector 52 of the detection system 5 for collecting signals from the detector 52 for gas layer phase processing analysis.
由上述說明得知,本案之氣相層析設備乃將分離系統3採以半導體製程來製出,氣路系統1將載體氣體以穩定流速導入管路13中,以及樣品注入系統2將受測樣品定量快速注入管路13中,而管路13連接到分離系統3之導氣入口313a中,並由泵浦14輸送載體氣體及受測樣品導入導氣入口313a流通於導氣通路314中,如第6圖所示,受測樣品及載體氣體之混合氣體(於沿著如圖所示箭頭之方向流動時)受導氣通路314上填充材32進行各成份的化合物之吸附分離,由於填充材32對於受測樣品中的每種化合物的吸附力皆不同,因此不同的化合物於導氣通路314內的速度會產生差異,吸附力較大的化合物其速度較慢,吸附力較小的化合物其速度較快,因此受測樣品內所包含的化合物於導氣通路314流動時,會受到填充材32進行各成份的化合物之吸附而逐漸分離開來,使得受測樣品內所包含的各成份之化合物以形成不同速率導出於導氣出口311a,並進入偵測系統5之偵測腔室51中,以偵測系統5之偵測器52對受測樣品之各成份化合物以不同速率導出作偵測,最後由紀錄系統6收集偵測器52之訊號進行受測樣品之氣相層析處理之測定分析紀錄,以便將已分離之氣體做檢測,分析受測樣品中各氣體中所包含之氣體成份及濃度。如此分離系統3採以半導體製程來製出,不僅可微小化,解決習知氣相層析儀之層析管柱長度設置問題、取代層析管柱,又能達到氣體層析分離之目的,供產業上利用。 It is known from the above description that the gas chromatography device in this case is produced by using a semiconductor process for the separation system 3. The gas path system 1 introduces a carrier gas into the pipeline 13 at a stable flow rate, and the sample injection system 2 will be tested. The sample is quantitatively injected into the pipeline 13 quickly, and the pipeline 13 is connected to the gas guide inlet 313a of the separation system 3, and the carrier gas is sent by the pump 14 and the test sample is introduced into the gas guide inlet 313a and circulates in the gas guide passage 314. As shown in Fig. 6, the mixed gas of the test sample and the carrier gas (when flowing in the direction of the arrow shown in the figure) is subjected to the adsorption and separation of the compounds of each component by the filling material 32 on the gas conducting path 314. The adsorption force of the material 32 for each compound in the test sample is different, so the speed of different compounds in the air guide path 314 will vary. The compound with the higher adsorption force has a slower speed and the compound with the lower adsorption force. Its speed is fast, so when the compounds contained in the test sample flow through the air guide path 314, they will be gradually separated by the adsorption of the compounds of the various components by the filler 32, so that the The contained compounds are exported at different rates to the air-conducting outlet 311a and entered into the detection chamber 51 of the detection system 5. The detector 52 of the detection system 5 Different rates are used for detection. Finally, the signal from the detector 52 is collected by the recording system 6 for the measurement and analysis of the gas chromatographic processing of the test sample in order to detect the separated gas and analyze each gas in the test sample. The gas composition and concentration contained in it. In this way, the separation system 3 is produced by a semiconductor process, which can not only miniaturize, solve the problem of the length of the chromatography column of the conventional gas chromatography, replace the chromatography column, but also achieve the purpose of gas chromatography separation. For industrial use.
上述之偵測器52可以是一熱傳導偵測器(TCD)、火焰離子化偵測器(FID)、電子捕獲偵測器(ECD)、火焰光量偵測器(FPD)、熱離化偵測器(TSD)、紅外線偵測器(IR)、質譜儀(MS)或是核磁共振波譜儀(NMR)等其中任一種,可將分離系統3所流出之受測樣品分離成份和濃度變化等資料轉變成可測量的電子信號,作為定性及定量分析的資訊。 The above-mentioned detector 52 may be a thermal conductivity detector (TCD), a flame ionization detector (FID), an electronic capture detector (ECD), a flame light detector (FPD), and a thermal ionization detector. Any device such as a TSD, infrared detector (IR), mass spectrometer (MS), or nuclear magnetic resonance spectrometer (NMR) can separate data such as the composition and concentration change of the test sample flowing out of the separation system 3. Transformed into measurable electronic signals for qualitative and quantitative analysis.
綜上所述,本案所提供之用於氣相層析設備之分離系統,利用以半導體製程製出分離系統之多個流路單元所架構出連續延伸環路之導氣通路,且導氣通路內設置填充材,得以具有大量混合物的受測樣品在通過導氣通路時,填充材對於受測樣品所含不同成份的化合物的吸附力不同,吸附力高的化合物流速會越來越慢,吸附力較低的化合物流速降低的趨勢較小,不同的流速將使得不同的化合物逐漸分離,達到氣體層析分離的目的,再透過偵測器去分析已分離之各受測樣品的成份及其濃度。如此透過微小化的半導體製程,將分離系統微型化,再透過微型的泵浦提升受測樣品的分離速度,可提升檢測效果及效率。 To sum up, the separation system for gas chromatography equipment provided in this case utilizes a plurality of flow path units produced by a semiconductor process to construct a continuous extended loop of a gas conducting path, and the gas conducting path The filling material is set inside, so that when the test sample with a large amount of mixture passes through the air conduction path, the filling material has different adsorption power to the compounds of different components contained in the test sample. The lower the flow rate of the compounds with a lower force, the smaller the tendency. The different flow rates will gradually separate the different compounds to achieve the purpose of gas chromatography separation, and then use the detector to analyze the components and concentrations of the separated test samples. . In this way, through the miniaturization of the semiconductor process, the separation system is miniaturized, and then the separation speed of the test sample is increased by the miniature pump, which can improve the detection effect and efficiency.
本案得由熟知此技術之人士任施匠思而為諸般修飾,然皆不脫如附申請專利範圍所欲保護者。 This case can be modified by anyone who is familiar with this technology, but it is not as bad as the protection of the scope of patent application.
Claims (22)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW107115323A TWI677682B (en) | 2018-05-04 | 2018-05-04 | Separating system of gas chromatography device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW107115323A TWI677682B (en) | 2018-05-04 | 2018-05-04 | Separating system of gas chromatography device |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI677682B true TWI677682B (en) | 2019-11-21 |
TW201947221A TW201947221A (en) | 2019-12-16 |
Family
ID=69189051
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW107115323A TWI677682B (en) | 2018-05-04 | 2018-05-04 | Separating system of gas chromatography device |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI677682B (en) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW564183B (en) * | 2002-07-04 | 2003-12-01 | Chung Shan Inst Of Science | A sample injection device for micro-gas chromatography |
TWI223709B (en) * | 2001-12-31 | 2004-11-11 | Chung Shan Inst Of Science | Sample injection system for gas chromatography |
TW201223870A (en) * | 2010-11-02 | 2012-06-16 | Sumitomo Seika Chemicals | Ammonia purification system |
TWM568367U (en) * | 2018-05-04 | 2018-10-11 | 研能科技股份有限公司 | Separating system of gas chromatography device |
-
2018
- 2018-05-04 TW TW107115323A patent/TWI677682B/en active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI223709B (en) * | 2001-12-31 | 2004-11-11 | Chung Shan Inst Of Science | Sample injection system for gas chromatography |
TW564183B (en) * | 2002-07-04 | 2003-12-01 | Chung Shan Inst Of Science | A sample injection device for micro-gas chromatography |
TW201223870A (en) * | 2010-11-02 | 2012-06-16 | Sumitomo Seika Chemicals | Ammonia purification system |
TWM568367U (en) * | 2018-05-04 | 2018-10-11 | 研能科技股份有限公司 | Separating system of gas chromatography device |
Also Published As
Publication number | Publication date |
---|---|
TW201947221A (en) | 2019-12-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7779671B2 (en) | Phased micro analyzer VIII | |
Akbar et al. | GC-on-chip: integrated column and photoionization detector | |
US7104112B2 (en) | Phased micro analyzer IV | |
US20040026617A1 (en) | Systems and methods for high-throughput microfluidic sample analysis | |
US20050063865A1 (en) | Phased VII micro fluid analyzer having a modular structure | |
JPWO2012029303A1 (en) | Device for preparing samples to be supplied to an ion mobility sensor | |
WO2007030755A2 (en) | Variable flow rate system for column chromatography | |
TWI677682B (en) | Separating system of gas chromatography device | |
CN111595994A (en) | Integrated portable high-precision MicroGC-mu TCD detector | |
US11906490B2 (en) | Micro gas chromatography system | |
JP2010513898A (en) | Detection device | |
US3103807A (en) | Liquid sample injection in a chromatographic apparatus | |
TWI742274B (en) | Gas chromatography device | |
US20040224422A1 (en) | Phased micro analyzer III, IIIA | |
TWM568367U (en) | Separating system of gas chromatography device | |
CN208621567U (en) | Gas chromatography equipment | |
CN110441408B (en) | Gas chromatography apparatus | |
CN110441101B (en) | Separation system of gas chromatography equipment | |
US7367216B2 (en) | Phased micro analyzer V, VI | |
US7815798B2 (en) | Discrete drop dispensing device and method of use | |
TWM568366U (en) | Gas chromatography device | |
US10048222B2 (en) | Miniaturized helium photoionization detector | |
WO2020244376A1 (en) | Method for manufacturing chromatographic separation micro-column, chromatographic separation micro-column, and gas analysis micro-system | |
JP2010002408A (en) | Method for collectively measuring multicomponent organic compound | |
JP2011220761A (en) | Column, gas analyzing apparatus and gas separation apparatus |