TWM548796U - Near-infrared absorbing filter and image sensor - Google Patents

Abstract

Provided is a near-infrared absorbing filter, comprising a first multi-layered film structure; a second multi-layered film structure; an filtering medium having opposite first and second surfaces, which is disposed between the first multi-layered film structure and the second multi-layered film structure; at least an infrared-absorbing organic layer formed between the first multi-layered film structure and the second multi-layered film structure; at least an ultraviolet-absorbing organic layer formed between the first multi-layered film structure and the second multi-layered film structure. The near-infrared filter is able to resolve the problem of color differences as well as infrared ray ghost images caused by reflections. The disclosure further provides an image sensor comprising the near-infrared absorbing filter as described above.

Description

Absorption type near infrared filter and image sensor

This creation is about an optical component, especially an absorption near-infrared filter that can be applied to an image sensor.

Generally, the visible light wavelength range that the human eye can feel is between about 400 nm and 700 nm. The invisible light includes infrared rays having a wavelength between 700 nm and 1200 nm, and ultraviolet rays having a wavelength between 100 nm and 400 nm. Infrared does not affect human visual color, but it is not the case for photographic devices such as cameras, cameras or cell phone cameras. A general photographic lens is provided with a plurality of optical lenses, filters and image sensing components, such as a charge coupled device (CCD) or a complementary metal oxide semiconductor (CMOS), in a lens mount. The image sensing component has high sensitivity. The light wave has a sensing range of 400 nm to 1200 nm and can capture infrared rays in invisible light. In order to avoid the influence of infrared light on the image, a filter or filter must be installed in front of the image sensing component to block the infrared light from entering the image sensing component to correct the color shift phenomenon of the image. Currently, conventional filters include reflective filters and absorption filters.

Reflective infrared filter 2 as shown in Figure 2A, including transparent The medium 20, such as glass, acrylic (PMMA) and quartz, and the first plating film 22 and the second plating film 24 formed on opposite surfaces of the transparent medium 20. Since the transmittance of general glass to incident light (T%) is as high as 90% or more. Therefore, the coating is used to reflect infrared rays having a wavelength of 700 nm to 1200 nm. However, as the size of the digital image product becomes lighter, thinner, shorter, and smaller, the incident angle of the light source received by the image sensing element or the optical system is amplified, and when the incident angle becomes larger, the reflective infrared filter is The 50% transmittance (central wavelength, or T50 wavelength) will produce a large offset that exceeds the white balance limit of the image sensing element, causing a color shift problem that cannot be applied to lenses of 5 million pixels or more.

Specifically, when the reflective filter is applied to an image sensor, light having a small incident angle (for example, an incident angle of 0 degrees) is incident on a central portion of the image sensing element, and a light having a large incident angle is incident. (If the angle of incidence is 30 degrees), it will be incident on the surrounding part of the image sensing element. Therefore, the position of the light-receiving surface of the image sensing element is different, and the characteristic of the light-transmitting transmittance curve of the incident light is also changed, so that a phenomenon in which the color tone is different between the central portion and the surrounding portion of the image, that is, the color shift problem. As shown in Fig. 2B, the T50 wavelength of the coating on a general reflective filter is 650 nm (incident angle 0 degree), and there is a deviation value of 30 nm from the short wavelength when the incident angle is 0 to 30 degrees. Since the color shift in the red light range is quite serious, if the T50 wavelength of the coating moves to a long wavelength, the ghost of the infrared light band cannot be eliminated.

For example, as shown in FIG. 2C, after the incident light L is incident on the reflective infrared filter 2, since the reflective infrared filter 2 cannot reflect all of the infrared rays, part of the infrared rays T still pass through the Reflective red The external line filter 2 causes the image sensing element 200 to sense infrared rays, and the infrared ray T is repeatedly reflected between the reflective infrared ray filter 2 and the image sensing element 200, and the formed image will generate glare and Ghost. Therefore, the T50 wavelength of the coating of the reflective filter cannot move to long wavelengths, but causes the color shift of the red light wave.

In order to improve the shortcomings of the reflective filter, the absorption infrared filter is changed to blue glass as a filter medium. As disclosed in the Republic of China invention patent No. 200920709 and the Republic of China invention patent No. 201200485, the blue glass itself has the characteristics of absorption of red light wavelength and low transmittance. As shown in FIG. 3A, the absorption infrared filter includes an absorption infrared filter medium 30, a first plating film 32 formed on the opposite surfaces, and a corresponding second plating film 34. The absorption transmittance (T%) curve of the absorption infrared filter at different angles (0 degrees and 30 degrees) is shown in Fig. 3B, and its color shift at an incident angle of 0 to 30 degrees at the T50 wavelength. cut back. However, in the infrared (in the range of 650 nm to 700 nm) and the ultraviolet ray, the color shift of the absorption infrared ray filter at an incident angle of 0 to 30 degrees cannot be effectively improved only by the plating.

Therefore, how to avoid ghosting and multi-angle color shift when image sensing components are imaged, so that the color shift of the infrared and ultraviolet band incident angles of 0 to 30 degrees is reduced, thereby obtaining images with more saturated colors and reduced chromatic aberration. It is the current goal to be solved.

The present invention provides an absorption near-infrared filter comprising: a first multilayer film structure; a second multilayer film structure; a filter medium, located in the first Between a multilayer film structure and the second multilayer film structure, and the filter medium has opposite first and second surfaces; at least one infrared absorbing organic layer is located in the first multilayer film structure and Between the second multilayer film structures; and at least one ultraviolet absorbing organic layer between the first multilayer film structure and the second multilayer film structure.

The present invention provides an absorption near-infrared filter comprising: a first multilayer film structure; a second multilayer film structure; a filter medium located in the first multilayer film structure and the second multilayer film Between the structures, the filter medium has opposite first and second surfaces; and at least one infrared and ultraviolet absorbing organic layer is disposed between the first multilayer film structure and the second multilayer film structure.

The present invention provides an image sensor comprising: a lens module comprising a lens and an absorption near-infrared filter according to the present invention disposed on a light penetration path of the lens; and an image sensing element And being disposed on one side of the lens module such that the absorption near-infrared filter is located between the lens and the image sensing element.

According to the creation of the absorption near-infrared filter, at least one infrared absorbing organic layer and at least one ultraviolet absorbing organic layer are formed on the filter medium, and the first multilayer film structure and the second multilayer are formed on the outer sides. The membrane structure is such that the filter medium, the at least one infrared absorbing organic layer and the at least one ultraviolet absorbing organic layer are interposed therebetween, thereby not only effectively reducing the light transmittance of the infrared wavelength band at 680 nm to 730 nm, but also effectively reducing the infrared wavelength band at 300 nm to 430nm light transmittance, and with a coating structure to reduce multi-angle color shift, can solve the problem of ghosting.

1,3,412‧‧‧Absorbing near-infrared filter

10‧‧‧ Filter media

10a‧‧‧ first surface

10b‧‧‧second surface

12‧‧‧Infrared absorbing organic layer

14‧‧‧UV absorption organic layer

15‧‧‧Infrared and UV-absorbing organic layers

16‧‧‧First multilayer membrane structure

18‧‧‧Second multilayer film structure

2‧‧‧Reflective infrared filter

20‧‧‧Transparent media

22, 32‧‧‧ first coating

24, 34‧‧‧ second coating

200, 42‧‧‧ image sensing components

30‧‧‧Absorbing infrared filter media

4‧‧‧Image sensor

40‧‧‧Substrate

41‧‧‧Lens module

410‧‧‧ inner casing

411‧‧‧ lens

43‧‧‧Outer casing

L‧‧‧ incident light

T‧‧‧Infrared

S1-S3‧‧‧ steps

1A is a schematic structural view of a specific embodiment of the absorbing absorption near-infrared filter; FIG. 1B is a schematic structural view of another specific embodiment of the absorbing absorption near-infrared filter; FIG. 1C is a diagram A schematic structural view of another specific embodiment of the absorbing near-infrared filter; a 1D drawing showing the preparation process of the absorbing near-infrared filter of the present invention; and a 1E drawing showing the absorbing near-infrared filter of the present invention The light sheet is at different angles (0 degrees and 30 degrees), wherein the 0 degree central wavelength of the coating is 710 nm, the light transmittance (T%) curve; the 1F image shows the structure of the created image sensor; 2A The figure shows the structure of a conventional reflective infrared filter; the second figure shows the different angles (0 degrees and 30 degrees) of the conventional reflective infrared filter after coating, wherein the 0 degree central wavelength of the coating a 650 nm split light transmittance (T%) curve; a second schematic diagram showing a reflective infrared filter applied to an image sensor; and a third diagram showing a conventional absorption infrared filter; and 3B map shows conventional absorption The split light transmittance (T%) curve of the infrared filter at different angles (0 degrees and 30 degrees) after coating.

The present invention is fully understood by reference to the following detailed description and exemplary embodiments, which are intended to illustrate non-limiting embodiments of the present invention.

It is to be understood that the structure, the proportions, the size and the like of the drawings are only used in conjunction with the disclosure of the specification for the understanding and reading of those skilled in the art, and are not intended to limit the implementation of the present invention. The qualifications, the modification of any structure, the change of the proportional relationship or the adjustment of the size, should not fall under the purpose of the creation and the purpose of the creation, should still fall within the technical content revealed by this creation. Within the scope of coverage. In the meantime, the terms "first", "second", "upper" and "one" as used in this specification are for convenience only, and are not intended to limit the scope of the creation. Changes or adjustments in their relative relationship are considered to be within the scope of the creation of the creation of the product without substantial changes.

The present invention provides an absorption near-infrared filter comprising: a first multilayer film structure; a second multilayer film structure; a filter medium located in the first multilayer film structure and the second multilayer film structure And the filter medium has an opposite first surface and a second surface; at least one infrared absorbing organic layer is located between the first multilayer film structure and the second multilayer film structure; and at least one ultraviolet ray An organic layer is absorbed between the first multilayer film structure and the second multilayer film structure.

According to the creation of the absorption near-infrared filter, at least one infrared absorbing organic layer and at least one ultraviolet absorbing organic layer are formed on the filter medium, and the first multilayer film structure and the second multilayer are formed on the outer sides. Membrane knot The filter medium, the at least one infrared absorbing organic layer and the at least one ultraviolet absorbing organic layer are interposed therebetween. Further, the multilayer film structure may be an infrared reflective multilayer film or an anti-reflective multilayer film, and may be formed on the side of the first surface or the second surface of the filter medium, respectively.

Therefore, the following two exemplary structures of the absorbing absorption near-infrared filter are explained below through the drawings.

Referring to FIG. 1A, which is an embodiment of the present invention, as shown in FIG. 1A, the absorption near-infrared filter 1 includes a filter medium 10 having a first surface 10a and a second surface opposite thereto. The surface 10b; at least one infrared absorbing organic layer 12 is formed on the first surface 10a of the filter medium 10 to absorb infrared rays; at least one ultraviolet absorbing organic layer 14 is formed on the at least one infrared absorbing organic layer 12. The first multilayer film structure 16 is formed on the at least one ultraviolet absorbing organic layer 14 such that the at least one infrared absorbing organic layer 12 and the at least one ultraviolet absorbing organic layer 14 are located at the first Between the film structure 16 and the filter medium 10; and a second multilayer film structure 18 formed on the second surface 10b of the filter medium 10.

The present invention includes another embodiment, the absorption near-infrared filter system includes: a filter medium having a first surface and a second surface; and at least one ultraviolet absorbing organic layer formed on the filter The first surface of the optical medium absorbs ultraviolet rays; at least one infrared absorbing organic layer is formed on the at least one ultraviolet absorbing organic layer to absorb infrared rays, so that the at least one ultraviolet absorbing organic layer is located at the at least one infrared absorbing layer Between the organic layer and the filter medium; the first multilayer film structure is formed on the at least An ultraviolet absorbing organic layer such that the at least one infrared absorbing organic layer is between the at least one ultraviolet absorbing organic layer and the first multilayer film structure; and a second multilayer film structure formed on the filter medium On the second surface.

Referring to FIG. 1B, which is another embodiment of the present invention, as shown in FIG. 1B, the absorption near-infrared filter 1 includes a filter medium 10 having a first surface 10a and a first surface. Two surfaces 10b; at least one infrared absorbing organic layer 12 is formed on the first surface 10a of the filter medium 10 to absorb infrared rays; at least one ultraviolet absorbing organic layer 14 is formed on the second of the filter medium 10 The surface 10b is configured to absorb ultraviolet rays; the first multilayer film structure 16 is formed on the at least one infrared absorbing organic layer 12 such that the at least one infrared absorbing organic layer 12 is located in the first multilayer film structure 16 and Between the optical medium 10 and the second multilayer film structure 18 is formed on the at least one ultraviolet absorbing organic layer 14 such that the at least one ultraviolet absorbing organic layer 14 is located in the second multilayer film structure 18 and the filter medium. Between 10.

In one embodiment of the present invention, the material of the filter medium may be a polymer material or glass, and may be a transparent glass (or white glass) or an absorption infrared filter medium (or blue glass), wherein The absorption infrared ray filter medium may contain a pigment that absorbs infrared rays. In some embodiments, the glass-based fluorophosphate-based infrared filter glass or the phosphate-based infrared filter glass is used for the absorption infrared filter medium. The phosphate-based infrared filter glass mainly contains P ₂ O ₅ , and the remaining components are, for example, Al ₂ O ₃ , CuO, SiO ₂ , MgO, CaO, K ₂ O, BaO, Li ₂ O, Nb ₂ O _{5 .} ZnO. In one embodiment, the phosphate-based infrared filter glass mainly comprises 40 to 75% of P ₂ O ₅ , 10 to 28% of Al ₂ O _{3 ,} and 3 to 8.5% of CuO.

The fluorophosphate-based infrared filter glass further includes metal fluorides such as AlF ₃ , NaF, MgF ₂ , CaF ₂ , SrF ₂ and BaF ₂ . In one embodiment, the fluorophosphate-based infrared filter glass comprises P ₂ O ₅ , CuO, and at least one selected from the group consisting of AlF ₃ , NaF, MgF ₂ , CaF ₂ , SrF _{2 ,} and BaF ₂ . Fluoride.

In the present creation, the filter medium is subjected to processing procedures such as cutting, grinding, polishing, and cold working as needed. Further, the filter medium usually has a thickness of 0.15 to 1.5 mm.

In the present invention, the at least one infrared absorbing organic layer and the at least one ultraviolet absorbing organic layer are formed on the surface of the filter medium by respectively forming a polymer containing an organic dye having infrared absorption characteristics and ultraviolet absorption characteristics. On the opposite surfaces of the filter medium, for example, the at least one infrared absorbing organic layer is formed on the first surface 10a of the filter medium 10, and the at least one ultraviolet absorbing organic layer is formed on the at least one infrared absorbing organic layer. On the floor. Or the at least one infrared absorbing organic layer and the at least one ultraviolet absorbing organic layer may be respectively formed on different side surfaces of the filter medium (that is, one film is formed on the first surface and the other film is formed on the film). The second surface) or may be simultaneously formed on the first and second surfaces of the filter medium.

In the film forming operation of the at least one infrared absorbing organic layer and the at least one ultraviolet absorbing organic layer, the polymer may be prepared by dissolving or dispersing in a solvent to prepare a coating liquid, and adding an organic coloring matter thereto, and then organically After the coating liquid of the pigment is directly applied to the substrate, it is dried to form an organic Coating (infrared absorbing organic layer or ultraviolet absorbing organic layer). A coating method such as a spin coating method, a gravure coating method, a spray coating method, a curtain coating method, an air knife coating method, a knife coating method, a reversible roll coating method, or the like is known. In one embodiment, the organic coating is formed by spin coating. Further, preferably, the thickness of the organic coating layer is from 0.1 μm to 10 μm, and more preferably, the thickness of the organic coating layer is 2 μm.

In a specific embodiment of the present invention, the infrared absorbing organic layer comprises an infrared absorbing organic pigment and a polymer, wherein the infrared absorbing organic pigment is selected from the group consisting of an azo compound, a diimonium compound, and a disulfide. At least one of a group consisting of a phenol metal complex, a phthalocyanine compound, a squaraine compound, and a cyanine compound, and in addition, optical radiation of different wavelength ranges can be absorbed by selecting different organic pigments that absorb infrared rays. . The polymer of the infrared absorbing organic layer must be capable of maintaining the dissolved or dispersed infrared organic pigment, and must also be a transparent dielectric. The material of the polymer may be selected from the group consisting of epoxy resin, polyacrylate, polyolefin, polycarbonate, At least one of the group consisting of polycycloolefins, polyurethanes, polyethers, and polyvinyl butyral. Further, it is preferred to use a crosslinkable polymer, for example, to modify a polymer which is not originally crosslinkable, so that the polymer has a crosslinkable functional group to form a crosslinkable polymer. In another embodiment, the at least one infrared absorbing organic layer further comprises a curing agent, such as toluene diisocyanate (TDI), for example, based on the solid content of the infrared absorbing organic layer, the content of the curing agent is greater than 0.1% by weight.

In a specific embodiment of the present invention, the ultraviolet absorbing organic layer contains an ultraviolet absorbing organic pigment and a polymer, wherein the ultraviolet absorbing polymer The organic coloring system is selected from at least one of the group consisting of a ketone ultraviolet absorber, a benzimidazole ultraviolet absorber, and a triazine ultraviolet absorber. In addition, optical radiation of different wavelength ranges can be absorbed by selecting different organic pigments that absorb ultraviolet light. The polymer of the ultraviolet absorbing organic layer must be capable of retaining the dissolved or dispersed organic pigment, and must also be a transparent dielectric. The material of the polymer may be selected from the group consisting of polyacrylate, polyolefin, polycarbonate, polycycloolefin, polyurethane. At least one of the group consisting of polyether and polyvinyl butyral. Further, it is preferred to use a crosslinkable polymer, for example, to modify a polymer which is not originally crosslinkable, so that the polymer has a crosslinkable functional group to form a crosslinkable polymer. The organic solvent to be contained in the coating liquid is not particularly limited as long as the organic dye and the polymer are uniformly dissolved or dispersed. Suitable solvents include, for example, alcohols such as isopropyl alcohol. Ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclopentanone, cyclohexanone and diacetone alcohol; esters such as ethyl acetate, butyl acetate, methoxyacetate Ester, ethyl acrylate and butyl acrylate; fluorinated alcohols such as 2,2,3,3-tetrafluoropropanol; hydrocarbons such as hexane, benzene, toluene and xylene; chlorinated hydrocarbons such as Methyl chloride, dichloroethane and chloroform. These organic solvents may be used singly or in combination.

In order to uniformly dissolve or disperse the organic dye and the above polymer in an organic solvent, a method of stirring, dispersing, pulverizing, or the like under heating may be employed.

After the coating liquid is applied, the curing is carried out by a conventional curing method such as ultraviolet curing or hot air curing, heater curing and baking. The curing temperature can be adjusted depending on the solvent. In a specific embodiment, it is recommended to use 100 ° C to 140 ° C (± 2 ° C), the curing temperature is good with good precision. The line temperature is preferably controlled within a range of ± 2 ° C, and the curing time is adjusted depending on the solvent of the coating liquid or the coating amount thereof, preferably 30 minutes.

In the absorption type near-infrared filter of various aspects of the present invention, the first multilayer film structure 16 and the second multilayer film structure 18 are further included, and the first multilayer film structure 16 and the second multilayer film structure are further included. 18 may be an infrared reflective multilayer film or an antireflective multilayer film. For example, the first multilayer film structure is an infrared reflective multilayer film and the second multilayer film structure is an antireflection multilayer film, or the second multilayer film structure is an infrared reflective multilayer film and the first multilayer film structure Antireflective multilayer film. In production, optical characteristics such as spectral transmittance characteristics can be adjusted by designing different refractive indices, different number of layers, and thickness. For example, a multilayer film is formed by alternately laminating materials having a high refractive index and a low refractive index. In terms of structure, the number of laminated layers is usually 4 to 50 layers, that is, the first multilayer film structure 16 or the second multilayer film structure 18 each comprise a film of 10 to 30 layers, and the infrared reflective multilayer film is The laminated thickness is 0.2 μm to 5 μm, and the laminated thickness is 0.2 μm to 5 μm for the antireflection multilayer film; generally, the first multilayer film structure 16 and the second multilayer film structure 18 have One of the thicker, one thinner thickness, the thin layer is preferably an antireflective multilayer film. Thus, the thickness of the first multilayer film structure 16 can be greater or less than the thickness of the second multilayer film structure 18, the thickness of which can depend on the properties desired to be formed, such as an infrared reflective multilayer film or an antireflective multilayer film.

In one embodiment, the first and second multilayer film structures are formed on the surface of the at least one infrared absorbing organic layer, the at least one ultraviolet absorbing organic layer or the filter medium by a vapor phase film forming method. The vapor phase film forming method can utilize various conventional coating methods, such as, for example, sputtering, ion One of various vacuum coating methods such as vapor deposition, electron beam evaporation, and chemical vapor deposition, or a combination thereof, is preferably formed by electron gun evaporation and ion source assisted coating.

In one embodiment, the material forming the film of each layer is selected from the group consisting of TiO ₂ , SiO ₂ , Y ₂ O ₃ , MgF ₂ , Al ₂ O ₃ , Nb ₂ O ₅ , AlF ₃ , Bi ₂ O ₃ , At least one of the group consisting of Gd ₂ O ₃ , LaF ₃ , PbTe, Sb ₂ O ₃ , SiO, SiN, Ta ₂ Os, ZnS, ZnSe, ZrO ₂ and Na ₃ AlF ₆ . In one embodiment, a cross-stack of TiO ₂ and SiO ₂ is used. In accordance with the foregoing description, in one embodiment, the first multilayer film structure 16 is an infrared reflective multilayer film and the second multilayer film structure 18 is an anti-reflective multilayer film. Alternatively, the first multilayer film structure 16 is an antireflective multilayer film, and the second multilayer film structure 18 is an infrared reflective multilayer film.

In addition to the above layers, a moisture-proof layer, an antistatic layer, an electromagnetic wave sheet layer, a selective absorption filter layer, an undercoat layer or a protective layer, and combinations thereof may be further formed.

Referring to FIG. 1C, it is another embodiment of the present invention. As shown in FIG. 1C, the absorption near-infrared filter 1 includes a filter medium 10 having a first surface 10a and a first surface. The second surface 10b; at least one infrared ray and ultraviolet absorbing organic layer 15 is formed on the first surface 10a of the filter medium 10 to absorb infrared rays and ultraviolet rays; and the first multilayer film structure 16 is formed on the at least one infrared ray And the ultraviolet absorbing organic layer 15 such that the at least one infrared ray and ultraviolet absorbing organic layer 15 is located between the first multilayer film structure 16 and the filter medium 10; and the second multilayer film structure 18 is formed at least An ultraviolet absorbing organic layer 14 and a second The film structure 18 is formed on the second surface 10b of the filter medium 10.

In another embodiment of the present invention, the at least one infrared absorbing and ultraviolet absorbing organic layer is contained in the layer and includes an infrared absorbing organic pigment, an ultraviolet absorbing organic pigment, and a polymer. The infrared ray-absorbing organic dye, the ultraviolet absorbing organic dye, and the polymer are as described above.

In one embodiment of the present invention, a polymer containing an organic dye having infrared absorption characteristics and an organic dye having ultraviolet absorption characteristics may be mixed on the surface of the filter medium or on opposite surfaces of the filter medium. Or filming on different side surfaces of the filter medium as needed.

According to the above description, the present invention describes the preparation of the inventive absorption type near-infrared filter by the flow shown in FIG. 1D. First of all. In step S1, a filter medium is first provided, and then, in step S2, at least one infrared absorbing organic layer and at least one ultraviolet absorbing organic layer are formed on the same side or opposite side surfaces of the filter medium to form the The order of the at least one infrared absorbing organic layer and the at least one ultraviolet absorbing organic layer is not particularly limited, and is formed on the same side surface by coating a coating liquid containing an infrared absorbing organic dye by spin coating. The organic coating material is heat-cured on the filter medium at a temperature of from 100 ° C to 200 ° C for 30 minutes, preferably 140 ° C, to form an infrared absorbing organic layer having a thickness of from 0.1 μm to 10 μm. Next, a coating liquid containing an ultraviolet absorbing organic dye is applied onto the infrared absorbing organic layer by spin coating, and then the organic coating material is heat-cured at a temperature of 100 ° C to 200 ° C for 1 to 120 minutes. To form an ultraviolet absorbing organic layer having a thickness of from 1 μm to 10 μm.

Finally, step S3 forms a multilayer film structure, and the first multilayer film structure is formed on the ultraviolet absorbing organic layer by electron gun evaporation and ion source assisted coating, and a second multilayer film structure is formed on the filter medium. On the two surfaces, wherein the first multilayer film structure is alternately vapor-deposited with TiO ₂ and SiO ₂ at a thickness of 10 nm to 200 nm to obtain a first multilayer film having a total layer number of 24 layers and a total thickness of 2600 nm. The second multilayer film structure was alternately vapor-deposited with TiO ₂ and SiO ₂ at a thickness of 10 nm to 200 nm to obtain a second multilayer film having a total layer number of 18 layers and a total thickness of 2300 nm.

In another embodiment of the present invention, the infrared absorbing organic layer material may be formed on the first surface of the filter medium as described above, and the ultraviolet absorbing organic layer material is formed on the filter medium. Two surfaces. Finally, a first multilayer film structure is formed on the infrared absorbing organic layer by vapor deposition, and a second multilayer film structure is formed on the ultraviolet absorbing organic layer.

In another embodiment of the present invention, the infrared wavelength band center wavelength (T50) of the absorption near-infrared filter is between 630 nm and 680 nm, and the average transmittance (T _avg ) of the wavelength range of 700 nm to 725 nm is less than 8%; the absorption near-infrared filter has an ultraviolet wavelength center wavelength (T50) of 410 nm to 418 nm, and an average transmittance (T _avg ) of a wavelength range of 350 nm to 390 nm is less than 7%.

Figure 1E shows the spectral transmittance (T%) curve of the absorbing absorption near-infrared filter of this creation. The curve is detected by the Hitachi-U4100 variable angle spectrometer. The absorption near-infrared filter of this creation is shown. The sheet can reduce the average transmittance between 700 nm and 725 nm to 1%, and more effectively reduce the difference in transmittance at a wavelength of 700 nm to less than 3%. In addition, it can be effectively reduced Ultraviolet light transmittance, improve the wavelength deviation of 0 to 30 degrees in the ultraviolet light band, successfully improve the multi-angle color shift problem, and solve the problem of infrared light ghost caused by reflection by the infrared absorption filter glass of the present invention. .

In addition, referring to the split light transmittance (T%) curve of the conventional absorption infrared filter of FIG. 3B at different angles (0 degrees and 30 degrees) after coating, it can be seen that the 0 degree and the 30 degree angle are in the near infrared light. The average transmittance of the band of 650nm to 700nm and the ultraviolet band of 350nm to 415nm is large, resulting in the penetration of near-infrared rays and the phenomenon of infrared light ghosting.

Compared with the prior art, the absorption near-infrared filter of the present invention has a low average transmittance of 700 nm to 725 nm, which can effectively improve the situation of infrared light ghosting, and is in the infrared light band of 0 degree and 30 degree angle. The average transmittance difference between 600 nm and 700 nm and the ultraviolet band of 350 nm to 415 nm is small, which shows that the filter has a lower chromatic aberration than the conventional technique, and overcomes the problem of multi-angle chromatic aberration.

According to the above description, the present invention provides an image sensor. As shown in FIG. 1F, the image sensor 4 includes a substrate 40, a lens module 41, an image sensing element 42, and an outer casing 43.

The lens module 41 includes an inner casing 410 and a lens 411 disposed in the inner casing 410 and the absorbing near-infrared filter 412 of the present invention, wherein the absorption near-infrared filter 412 is provided On the light penetration path of the lens 411. The image sensing component 42 is disposed on one side of the lens module 41, for example, is wire-bonded and electrically connected to the substrate 40, so that the absorption near-infrared filter is located in the lens and the image sense. Between components.

The above embodiments are merely illustrative of the principles of the present invention and their effects, and are not intended to limit the present invention. Any person skilled in the art can modify and change the above embodiments without departing from the spirit and scope of the present invention. Therefore, the scope of protection of this creation should be as listed in the scope of the patent application described later.

1‧‧‧Absorbing near-infrared filter

10‧‧‧ Filter media

10a‧‧‧ first surface

10b‧‧‧second surface

12‧‧‧Infrared absorbing organic layer

14‧‧‧UV absorption organic layer

16‧‧‧First multilayer membrane structure

18‧‧‧Second multilayer film structure

Claims (36)

An absorption near-infrared filter includes: a first multilayer film structure; a second multilayer film structure; a filter medium disposed between the first multilayer film structure and the second multilayer film structure, And the filter medium has opposite first and second surfaces; at least one infrared absorbing organic layer is disposed between the first multilayer film structure and the second multilayer film structure; and at least one ultraviolet absorbing organic layer And between the first multilayer film structure and the second multilayer film structure. An absorption near-infrared filter includes: a first multilayer film structure; a second multilayer film structure; a filter medium disposed between the first multilayer film structure and the second multilayer film structure, And the filter medium has opposite first and second surfaces; and at least one infrared and ultraviolet absorbing organic layer is disposed between the first multilayer film structure and the second multilayer film structure. The absorption type near-infrared filter according to claim 1 or 2, wherein the filter medium is a phosphate-based infrared filter glass. The absorption type near-infrared filter according to claim 3, wherein the phosphate-based infrared filter glass contains P ₂ O ₅ and CuO. The absorption type near-infrared filter according to the third aspect of the invention, wherein the phosphate-based infrared filter glass is a fluorophosphate-based infrared filter glass. The absorption near-infrared filter according to claim 5, wherein the fluorophosphate-based infrared filter glass comprises P ₂ O ₅ , CuO, and is selected from the group consisting of AlF ₃ , NaF, MgF ₂ , and CaF _{2 .} Fluoride of at least one of the group consisting of SrF ₂ and BaF ₂ . The absorption type near-infrared filter according to claim 1 or 2, wherein the filter medium is a transparent glass. The absorption type near-infrared filter according to claim 1 or 2, wherein the filter medium has a thickness of 0.15 to 1.5 mm. The absorption type near-infrared filter according to claim 1, wherein the at least one infrared absorbing organic layer has a center wavelength (T50) of 630 nm to 680 nm and an average transmittance of a wavelength range of 700 nm to 725 nm. (T _avg ) is less than 8%. The absorption near-infrared filter according to claim 9, wherein the at least one infrared absorbing organic layer comprises an infrared absorbing organic pigment and a polymer. The absorption type near-infrared filter according to claim 9, wherein the at least one infrared absorbing organic layer has a thickness of 0.1 μm to 10 μm. The absorption near-infrared filter according to claim 10, wherein the infrared absorbing organic pigment is selected from the group consisting of an azo compound, a diimonium compound, a dithiophenol metal complex, and a phthalocyanine Class combination At least one of the group consisting of a compound, a squaraine compound, and a cyanine compound. The absorption near-infrared filter according to claim 10, wherein the polymer is selected from the group consisting of epoxy resin, polyurethane, polyacrylate, polyolefin, polycarbonate, polycycloolefin, and polyethylene. At least one of the groups consisting of butyraldehyde. The absorption type near-infrared filter according to claim 1, wherein the at least one ultraviolet absorbing organic layer has a center wavelength (T50) of 410 nm to 418 nm and an average transmittance of a wavelength range of 350 nm to 390 nm ( T _avg ) is less than 7%. The absorption near-infrared filter according to claim 14, wherein the at least one ultraviolet absorbing organic layer comprises an ultraviolet absorbing organic pigment and a polymer. The absorption type near-infrared ray filter of claim 14, wherein the at least one ultraviolet absorbing organic layer has a thickness of 0.1 μm to 10 μm. The absorption near-infrared ray filter according to claim 15, wherein the ultraviolet absorbing organic pigment is selected from the group consisting of a ketone ultraviolet absorber, a benzimidazole ultraviolet absorber, and a triazine ultraviolet absorber. At least one of the group consisting of. The absorption near-infrared filter according to claim 15, wherein the polymer is selected from the group consisting of epoxy resin, polyurethane, polyacrylate, polyolefin, polycarbonate, polycycloolefin and polyethylene. At least one of the groups consisting of butyraldehyde. The absorption type near-infrared filter according to claim 1 or 2, wherein the first multilayer film structure is an infrared reflective multilayer film and the second multilayer film structure is an anti-reflection multilayer film. The absorption type near-infrared filter according to claim 1 or 2, wherein the second multilayer film structure is an infrared reflective multilayer film and the first multilayer film structure is an antireflection multilayer film. The absorption type near-infrared filter according to claim 19, wherein the first multilayer film structure and the second multilayer film structure each comprise a film of 4 to 50 layers. The absorption type near-infrared filter according to claim 19, wherein the material of each of the first multilayer film structure and the second multilayer film structure is selected from the group consisting of TiO ₂ , SiO ₂ , and Y. ₂ O ₃ , MgF ₂ , Al ₂ O ₃ , Bi ₂ O ₃ , Gd ₂ O ₃ , LaF ₃ , Nb ₂ O ₅ , AlF ₃ , PbTe, Sb ₂ O ₃ , SiO, SiN, Ta ₂ Os, ZnS, At least one of the group consisting of ZnSe, ZrO ₂ and Na ₃ AlF ₆ . The absorption type near-infrared filter according to claim 19, wherein the first multilayer film structure and the film of each of the second multilayer film structures are respectively made of a TiO ₂ and SiO ₂ interlaced layer. Accumulated. The absorption near-infrared filter according to claim 19, wherein the first multilayer film structure has a central wavelength between 700 nm and 730 nm, and the central wavelength of the second multilayer film structure is located. Between 700nm and 730nm. The absorption type near-infrared filter according to claim 19, wherein the first multilayer film structure has a thickness of 0.2 μm to 5 μm. And the thickness of the second multilayer film structure is from 0.2 μm to 5 μm. The absorption type near-infrared filter according to claim 1, wherein the at least one infrared absorbing organic layer is formed on the first surface of the filter medium, and the at least one ultraviolet absorbing organic layer is formed. The at least one infrared absorbing organic layer is disposed between the at least one infrared absorbing organic layer and the first multilayer film structure. The absorption type near-infrared filter according to claim 1, wherein the at least one ultraviolet absorbing organic layer is formed on the first surface of the filter medium, and the at least one infrared absorbing organic layer is formed. The at least one ultraviolet absorbing organic layer is disposed between the at least one ultraviolet absorbing organic layer and the first multilayer film structure. The absorption type near-infrared filter according to claim 1, wherein the at least one infrared absorbing organic layer is formed on the first surface of the filter medium, and the at least one ultraviolet absorbing organic layer is formed. And on the second surface of the filter medium, the filter medium is disposed between the at least one infrared absorbing organic layer and the at least one ultraviolet absorbing organic layer. The absorption near-infrared filter according to claim 2, wherein the at least one infrared and ultraviolet absorbing organic layer has an infrared wavelength center wavelength (T50) of 630 nm to 680 nm and a wavelength range of 700 nm to 725 nm. The average penetration (Tavg) is less than 8%. Absorbing near-infrared filtering as described in claim 2 The sheet, wherein the at least one infrared and ultraviolet absorbing organic layer has an ultraviolet wavelength center wavelength (T50) of 410 nm to 418 nm, and an average transmittance (Tavg) of the wavelength range of 350 nm to 390 nm is less than 7%. The absorption type near-infrared filter according to claim 2, wherein the at least one infrared ray and the ultraviolet absorbing organic layer comprise an organic dye that absorbs infrared rays, an organic dye that absorbs ultraviolet rays, and a polymer. The absorption type near-infrared filter according to claim 2, wherein the at least one infrared ray and the ultraviolet absorbing organic layer have a thickness of 0.1 to 10 μm. The absorption near-infrared filter according to claim 31, wherein the infrared absorbing organic pigment is selected from the group consisting of an azo compound, a diimonium compound, a dithiophenol metal complex, and a phthalocyanine At least one of the group consisting of a compound, a squaraine compound, and a cyanine compound. The absorption type near-infrared filter according to claim 31, wherein the ultraviolet-absorbing organic pigment is selected from the group consisting of a ketone ultraviolet absorber, a benzimidazole ultraviolet absorber, and a triazine ultraviolet absorber. At least one of the group consisting of. The absorption near-infrared filter according to claim 31, wherein the polymer is selected from the group consisting of epoxy resin, polyurethane, polyacrylate, polyolefin, polycarbonate, polycycloolefin, and polyethylene. At least one of the groups consisting of butyraldehyde. An image sensor includes: The lens module includes a lens and an absorption type near-infrared filter according to claim 1 or 2; and an image sensing element is disposed on the lens One side of the module is such that the absorption near-infrared filter is positioned between the lens and the image sensing element.