TWM545364U - Organic light-emitting diode display device - Google Patents

Abstract

An organic light-emitting diode display device is disclosed herein. The organic light-emitting diode display device includes a substrate, a thin film transistor array, a light emitting component and a light-absorbing layer. The thin film transistor array is disposed on the top surface of the substrate. The light emitting component is disposed on the thin film transistor array and includes a first electrode layer, an organic layer and a second electrode layer. The first electrode layer is disposed near the side of the thin film transistor array. The organic layer is disposed on the first electrode layer. The second electrode layer is disposed on the organic layer oppositely to the first electrode layer. The first electrode layer and the second electrode layer have a first penetration rate. The light-absorbing layer is disposed between the first electrode layer and the thin film transistor array and has a second penetration rate. The first penetration rate is greater than the second penetration rate.

Description

Organic light emitting diode display device

The present invention relates to an organic light emitting diode display device, and more particularly to an organic light emitting diode display device having a light absorbing layer.

Organic light-emitting diode displays are seen as the mainstream technology of the next generation. In the conventional organic light-emitting diode display, in order to improve the light-emitting efficiency, a material having a high reflectivity is used as a driving electrode of the organic light-emitting diode, so that the light emitted downward can be reflected upward by the driving electrode below, thereby obtaining a comparison. High light output efficiency. In addition, an organic light-emitting diode display of a micro-optical resonator has been proposed. In this technique, in addition to the high-reflectivity material of the lower driving electrode of the organic light-emitting diode, the upper driving electrode must also have a certain The reflectivity of this type of display provides better color saturation and higher positive viewing angle brightness, but has some disadvantages. For example, although the brightness and color saturation of the display are increased in the front view direction, the color distortion of the image of the large viewing angle is caused, and the brightness greatly decreases as the viewing angle increases.

In the above technique, although high light extraction efficiency is obtained, It also caused some problems. For example, a highly reflective electrode reflects light incident from the outside, so when the user is under a high-intensity ambient light source (for example, outdoor sunlight), the light reflected from the outside via the panel will seriously affect the original display. The display screen causes the user to be unable to clearly see the display of the original display. In addition, in the technology of the micro-optical resonator, although this technique can provide better color saturation and higher positive viewing angle brightness, the same problem is faced because of the necessity of using highly optically reflective electrodes.

In order to solve the above problems, in the prior art, a set of anti-reflection optical film groups are added above the display surface of the organic light-emitting diode display to reduce the reflection phenomenon of the organic light-emitting diode panel on external light. The structure of such an antireflection optical film group is composed of a polarizer and a quarter wave plate. Although the anti-reflection optical film group of this structure solves the problem of external light reflection, it also causes the brightness loss of the organic light-emitting diode display to be 50%-60% (since the transmittance of a polarizer is only about 40-50). %). Moreover, the additional optical film set is an externally attached structure, resulting in an increase in the thickness and weight of the overall device. Therefore, it is necessary to propose a new organic light emitting diode display panel to improve the technical problem of this existence.

In addition, in the prior art, the high-reflection electrode of the OLED light-emitting element is a highly active electrode, which is easily affected by external moisture and oxygen, thereby affecting the life of the OLED element. Therefore, OLEDs require a tight packaging process to prevent external moisture and oxygen from entering the interior of the OLED device. The most commonly used is the glass substrate. The upper and lower substrates of the OLED element, and the glass substrate is used to achieve low water blocking and oxygen permeability, thereby ensuring the life and quality of the OLED element. However, if the overall weight, thickness, and even future applications are taken into consideration, it is inevitable that the upper and lower substrates need to use a plastic substrate. However, the use of a plastic plate will reduce the ability to block water and oxygen, thereby reducing the life and quality of OLED components.

In view of this, in the present case, a high transmittance material is used to fabricate the electrodes in the organic light emitting diode display device, and a laminate having light absorption is designed under the light emitting assembly, thereby effectively improving the brightness contrast of the display device, and Reduce the loss of luminous efficiency. In addition, the reliability of the organic light emitting diode display device can be improved, and it is more suitable for flexible applications.

One aspect of the present invention is to provide an organic light emitting diode display device. The organic light emitting diode display device includes a substrate, a thin film transistor array, a light emitting module, and a light absorbing layer. The thin film transistor array is disposed on the upper surface of the substrate. The light emitting component is disposed on the thin film transistor array and includes a first electrode layer, an organic layer and a second electrode layer. The first electrode layer is disposed adjacent to one side of the thin film transistor array. The organic layer is disposed on the first electrode layer. The second electrode layer is disposed on the organic layer with respect to the first electrode layer. The first electrode layer and the second electrode layer have a first transmittance. The light absorbing layer is disposed between the first electrode layer and the thin film transistor array and has a second transmittance. Wherein the first transmittance is greater than the second transmittance.

Another aspect of the present invention is to provide an organic light emitting diode display device. The organic light emitting diode display device includes a substrate with light absorption function, and is thin Membrane transistor array and illuminating assembly. The thin film transistor array is disposed on the upper surface of the substrate. The light emitting component is disposed on the thin film transistor array and includes a first electrode layer, an organic layer and a second electrode layer. The first electrode layer is disposed adjacent to one side of the thin film transistor array. The organic layer is disposed on the first electrode layer. The second electrode layer is disposed on the organic layer with respect to the first electrode layer. The first electrode layer and the second electrode layer have a first transmittance and the substrate has a second transmittance, and the first transmittance is greater than the second transmittance.

In summary, by applying the above embodiments, the conductive material with high transmittance is used as the first electrode layer and the second electrode layer, and the light absorbing layer is used to reduce the reflection of the external light source, thereby reducing the addition of the additional optical film group. necessary. According to this, external light reflection can be avoided to affect the picture quality, and the contrast of the organic light emitting diode display device can be improved. In addition, since no external optical film set is required, the self-luminous efficiency of the organic light-emitting diode display device is not affected, and the thickness and weight of the organic light-emitting diode display device itself can be reduced.

100‧‧‧Organic light-emitting diode display device

110‧‧‧Substrate

111‧‧‧External light source

113‧‧‧Self-illumination

115‧‧‧Substrate

120‧‧‧Thin Film Array

125‧‧‧Electrical insulation

130‧‧‧flat layer

140‧‧‧Light absorbing layer

150‧‧‧First electrode layer

160‧‧‧Organic layer

161‧‧‧ hole injection layer

162‧‧‧ hole transfer layer

163‧‧‧Organic light-emitting layer

164‧‧‧ hole obstruction

165‧‧‧Electronic transmission layer

170‧‧‧Second electrode layer

175‧‧‧Color filter layer

180‧‧‧Package board

190‧‧‧Lighting components

200‧‧‧Organic LED display device

300‧‧‧Organic LED display device

400‧‧‧Organic LED display device

500‧‧‧Organic LED display device

1A-1B is a schematic diagram showing an organic light emitting diode display device according to an embodiment of the present invention; and FIG. 2 is a schematic view showing an organic light emitting diode display device according to an embodiment of the present invention; The figure shows a schematic diagram of an organic light emitting diode display device according to an embodiment of the invention; and FIG. 4 shows an organic light emitting diode display according to an embodiment of the invention. FIG. 5 is a schematic diagram of an organic light emitting diode display device according to an embodiment of the invention.

The spirit and scope of the present disclosure will be apparent from the following description of the preferred embodiments of the present disclosure. Modifications do not depart from the spirit and scope of the disclosure.

The terms “first”, “second”, etc. used in this document are not specifically intended to refer to the order or order, nor are they used to limit the case. They are only used to distinguish between components or operations described in the same technical terms. .

Regarding the directional terms used in this article, such as: up, down, left, right, front or back, etc., only refer to the direction of the additional schema. Therefore, the directional terminology used is used to illustrate that it is not intended to limit the creation. In addition, the directions "upper" and "lower" as used in the content are only used to indicate relative positional relationships. Furthermore, an element that is "on", "above", "in" or "in" or "in" or "an" or "an" There are other additional components between one component that make one component in direct contact with the other.

Referring to FIG. 1A , FIG. 1A is a schematic diagram of an organic light emitting diode display device 100 according to an embodiment of the invention. As shown in FIG. 1A, the organic light emitting diode display device 100 includes a substrate 110, a thin film transistor array 120, a light absorbing layer 140, and a light emitting module 190. among them, The light emitting assembly 190 includes a first electrode layer 150, an organic layer 160, and a second electrode layer 170.

More specifically, the thin film transistor array 120 is disposed on an upper surface of the substrate 110. The light emitting component 190 is disposed on the thin film transistor array 120, and the first electrode layer 150 in the light emitting component 190 is disposed on one side of the thin film transistor array 120, and the organic layer 160 is disposed on the first electrode layer 150. The second electrode layer 170 is disposed on the organic layer 160 with respect to the first electrode layer 150. The light absorbing layer 140 is disposed between the light emitting device 190 and the thin film transistor array 120, and is specifically disposed between the first electrode layer 150 and the thin film transistor array 120.

The organic light emitting diode display device 100 of the present embodiment further includes an electrical insulating layer 125 disposed on the upper surface of the thin film transistor array 120. The electrically insulating layer 125 can be, for example, a thin film layer covering the surface of the thin film transistor of the thin film transistor array 120 to provide electrical isolation of the thin film transistor array 120 and further provide protection to prevent subsequent process damage. Thin film transistor. The electrically insulating layer 125 may be made of, for example, germanium dioxide, tantalum nitride or the like.

The organic light emitting diode display device 100 of the present embodiment further includes a flat layer 130. The flat layer 130 is formed of an insulating material and is disposed between the light absorbing layer 140 and the electrically insulating layer 125, specifically, is disposed on the upper surface of the electrically insulating layer 125 for planarizing the electrically insulating layer 125 and the film. The transistor array 120 as a whole is an uneven surface caused by the thin film transistor array 120.

The organic light emitting diode display device 100 of the embodiment further includes A package board 180 is disposed on the second electrode layer 170 and encapsulates the organic light-emitting diode display device 100 corresponding to the substrate 110 to prevent the components from coming into contact with external oxygen and/or moisture to cause deterioration.

As described above, the structure of the organic light emitting diode display device 100 of the present embodiment is composed of a thin film transistor array 120, an electrically insulating layer 125, a flat layer 130, a light absorbing layer 140, a first electrode layer 150, and an organic layer. The second electrode layer 170 and the package board 180 are sequentially stacked on the substrate 110. Therefore, since the light absorbing layer 140 is integrated inside the organic light emitting diode display device 100 and disposed under the light emitting device 190, the external light source 111 is incident on the organic light emitting diode display device 100, and reaches the light layer by layer. When the absorption layer 140 is absorbed, it will be absorbed without reflection, which can improve the contrast between light and dark on the display. In addition, the position of the light absorbing layer 140 does not affect the self-illumination 113 generated by the light-emitting assembly 190, and thus the luminous efficiency of the organic light-emitting diode display device 100 can be improved. Furthermore, since it is not necessary to additionally add an optical film group of the externally attached structure as in the prior art, the organic light-emitting diode display device 100 as a whole can avoid an increase in thickness and weight.

In principle, when the first electrode layer 150 and the second electrode layer 170 are connected to a voltage source or a current source, the electrons and holes of the organic layer 160 are moved and combined with the voltage to convert the energy from the electrical energy into visible light. . In addition, if the organic layer 160 is combined with different organic materials, different color lights can be generated to achieve a colorful or full color display.

In operation, the thin film transistor array 120 serves as a control element for electrically connecting the first electrode layer 150. In this embodiment, the electrically insulating layer 125, the planarization layer 130, and the light absorbing layer 140 are all designed as an insulating layer. And constitute a relationship of a composite laminated structure. The composite laminated structure is provided with a plurality of through holes (not shown), and the through holes are filled with a conductive material, so that the first electrode layer 150 and the thin film transistor array 120 are electrically conductive through the through holes. Material call connection. It should be noted that when the first electrode layer 150 and the second electrode layer 170 are connected to a voltage source or a current source, the polarity of the first electrode layer 150 is different from the polarity of the second electrode layer 170. For example, when the first electrode layer 150 is positive, the second electrode layer 170 is negative; conversely, when the first electrode layer 150 is negative, the second electrode layer 170 is positive.

It is further explained that the first electrode layer 150 and the second electrode layer 170 of the embodiment have a higher first transmittance of about 70%. Preferably, the first electrode layer 150 and the second electrode layer 170 are materials which have low activity and at the same time have both optical low reflectivity and high transmittance, and may be, for example, indium tin oxide (ITO) or indium oxide. Indium zinc oxide (IZO) aluminum zinc oxide (AZO), indium tin zinc oxide (ITZO), cadmium tin oxide (CTO), tin oxide (tin oxide), Zinc oxide, cadmium oxide, indium gallium zinc oxide (InGaZnO), indium gallium zinc magnesium oxide (InGaZnMgO), indium gallium aluminum Oxide, InGaAlO) or indium gallium magnesium oxide (InGaMgO) and other materials, but not limited to this. The light absorbing layer 140 of the present embodiment has a lower second transmittance in order to have a better optical absorption effect, and the second transmittance is less than about 30%. For example, the light absorbing layer 140 may be formed of a black or dark optical absorbing material, such as a dyeing material, graphite, carbon material, etc., which is not actually limited by the present invention. In this regard, the first electrode layer 150 and the second electrode layer 170 of the present embodiment have a first transmittance greater than a second transmittance of the light absorbing layer 140.

In addition, in order to reduce the optical reflection effect of the organic light-emitting diode display device 100, the first electrode layer 150, the second electrode layer 170, and the light absorbing layer of the present embodiment may be further selected to have a lower reflectance in material selection. The material of the characteristics is preferably a reflectance of less than 30%, respectively.

It is further noted that the organic layer 160 of the present embodiment is actually a structural design of a composite layer. As shown in FIG. 1B, the organic layer 160 may include, for example, a hole injection layer (HIL) 161 and a hole transfer layer (HTL). 162. An organic light-emitting layer (EML) 163, a hole blocking layer (HBL) 164, and an electron transport layer (ETL) 165 are sequentially disposed on the first electrode layer 150 to be located on the first electrode layer 150 and the second electrode layer. Between 170. It should be understood that the structure of each layer in the organic layer 160 is not limited by the embodiment, and the actual design can be adjusted according to requirements.

Referring to FIGS. 1A and 1B together, when the first electrode layer 150 and the second electrode layer 170 are connected to a voltage source or a current source, the organic light-emitting layer 163 generates the self-luminous 113, and the generated self-luminous 113 emits upward. And launch downwards. Since the second electrode layer 170 has a high transmittance, the self-luminous 113 generated by the organic light-emitting layer 163 is emitted upward through the second electrode layer 170. When the organic light-emitting layer 163 generates the downward self-illumination 113, the downward self-luminous 113 may be transmitted through the first electrode layer 150 to the light absorbing layer 140, in other words, the present The organic light-emitting diode display device 100 of the embodiment is in the form of an up Emission. At this time, the light absorbing layer 140 has low reflectance and low transmittance, and the light absorbing layer 140 absorbs the downward self-illumination 113 of the organic light-emitting layer 163 and does not reflect the downward self-luminous 113.

As apparent from the above description, both the first electrode layer 150 and the second electrode layer 170 have characteristics of high transmittance and low reflectance. In addition, the organic light-emitting diode display device 100 has the characteristic of self-illumination 113. Therefore, when the organic light-emitting diode display device 100 is in an environment of a high-illuminance light source, the external light source 111 passes through the transparent second electrode layer 170 and the first An electrode layer 150 is directly incident on the light absorbing layer 140 and absorbed by the light absorbing layer 140, and the first electrode layer 150 and the second electrode layer 170 are simultaneously reduced to generate reflected light from the external light source 111, and the organic light emitting diode is integrally raised. The contrast of the body display device 100. In addition, the position of the light absorbing layer 140 does not affect the upward self-illumination 113 generated by the light-emitting component 190, and the luminous efficiency of the organic light-emitting diode display device 100 can be effectively improved.

In other embodiments of the present invention, the light absorbing layer 140 may further be a single-layer dense organic material or an inorganic material structure, or a multi-layer structure in which a composite organic material and an inorganic material are staggered. The specific effect may be that the water vapor and the oxygen are isolated from the outside, or the water vapor and the oxygen are adsorbed, and the water oxygen is also insulated and adsorbed at the same time, so as to block the moisture and oxygen from penetrating into the interior of the light-emitting component 190. The function is to improve the reliability of the organic light emitting diode display device 100.

Finally, it is additionally noted that since the light absorbing layer 140 of the present embodiment is disposed on the thin film transistor array 120 and the first electrode layer 150 Therefore, the light absorbing layer 140 can serve as a light shielding layer of the thin film transistor array 120, avoiding the defect that the thin film transistor array 120 generates a photocurrent effect after irradiating the light of the strong external light source 111, and further has the protective thin film transistor array 120. Effect. In addition, since the light absorbing layer 140 is a completely planar design, the metal conductive lines (not shown) of the thin film transistor array 120 can be simultaneously covered to avoid reflection of the metal conductive lines and reduce other appearance problems.

Please refer to FIG. 2 , which is a schematic diagram of an organic light emitting diode display device 200 according to an embodiment of the invention. The organic light emitting diode display device 200 of the present embodiment is similar to the organic light emitting diode display device 100 of the first embodiment, except that the organic light emitting diode display device 200 of the present embodiment further includes a color. The filter layer 175 is disposed on the package board 180 and located between the package board 180 and the second electrode layer 170. The color filter layer 175 can be fabricated by, for example, using the package board 180 as a substrate, and forming a plurality of color blocks (not shown) thereon. The color filter layer 175 further has an optical absorption effect. For example, in the case of a red color block, the color filter layer 175 passes the red band of the external light source 111 and absorbs the bands of other colors. As a result, the color filter layer 175 absorbs part of the light source of the external light source 111, and the remaining external light source 111 that is not absorbed by the color filter layer 175 passes through the color filter layer 175 and the second electrode layer 170 layer by layer. The organic layer 160 and the first electrode layer 150 are incident on the light absorbing layer 140 and are absorbed by the light absorbing layer 140. In this case, the external light source 111 is absorbed by the color filter layer 175 and the light absorbing layer 140, and the probability of reflection by the external light source 111 is further reduced, thereby being in the outer ring. The organic light-emitting diode display device 200 can have better visibility under high brightness.

In addition, the positions of the plurality of color blocks of the color filter layer 175 correspond to the sub-pixels of the organic light-emitting diode display device 200 itself. For example, the red block of the color filter layer 175 will correspond to the red sub-pixel of the organic light-emitting diode display device 200, and so on. The above red block is only for illustrative purposes, and is not intended to limit the novelty. The color filter function of any color block is within the protection scope of the present invention.

Please refer to FIG. 3 , which is a schematic diagram of an organic light emitting diode display device 300 according to an embodiment of the invention. Since the organic light emitting diode display device 300 of the present embodiment is similar to the organic light emitting diode display device 100 of the first FIG. 1A embodiment, only the difference between the two will be described below.

As shown in FIG. 3, the organic light emitting diode display device 300 includes a substrate 110, a thin film transistor array 120, an electrically insulating layer 125, a light absorbing layer 140, and a light emitting device 190. The light emitting component 190 includes a first electrode layer 150, an organic layer 160, and a second electrode layer 170. Generally, the thin film transistor array 120, the electrically insulating layer 125, the light absorbing layer 140, the first electrode layer 150, the organic layer 160, the second electrode layer 170, and the package board 180 are sequentially stacked on the substrate 110.

The organic light emitting diode display device 300 of the present embodiment is different from the organic light emitting diode display device 100 of FIG. 1A in that the organic light emitting diode display device 300 of the present embodiment omits the flat layer 130. Structural design, but directly using the light absorbing layer 140 to planarize the film The surface of the transistor array 120.

Specifically, the light absorbing layer 140 of the present embodiment has an effect of optical absorption and planarization. In other words, the light absorbing layer 140 replaces the flat layer 130. In this case, the electrically insulating layer 125 and the light absorbing layer 140 of the present embodiment are in a relationship of forming a composite laminated structure. The composite laminated structure is provided with a plurality of through holes (not shown), and the through holes are filled with a conductive material, so that the first electrode layer 150 and the thin film transistor array 120 are electrically connected through the conductive material in the through holes. . In this way, the thickness and weight of the organic light emitting diode display device 300 can be further reduced.

In another embodiment, the organic light emitting diode display device 300 of the present embodiment can further design the color filter layer 175 included in the organic light emitting diode display device 200 of the second embodiment. The lamination position and related functions of the color filter layer 175 are not described here.

Please refer to FIG. 4 , which is a schematic diagram of an organic light emitting diode display device 400 according to an embodiment of the invention. Since the organic light emitting diode display device 400 of the present embodiment is similar to the organic light emitting diode display device 100 of the first FIG. 1A embodiment, only the difference between the two will be described below.

As shown in FIG. 4, the organic light emitting diode display device 400 includes a substrate 110, a thin film transistor array 120, a light absorbing layer 140, and a light emitting module 190. The light emitting component 190 includes a first electrode layer 150, an organic layer 160, and a second electrode layer 170. In general, the thin film transistor array 120, the light absorbing layer 140, the first electrode layer 150, the organic layer 160, and the second electrode layer The 170 and the package board 180 are sequentially stacked on the substrate 110.

The organic light emitting diode display device 400 of the present embodiment is different from the organic light emitting diode display device 100 of FIG. 1A in that the organic light emitting diode display device 400 of the present embodiment dispenses with electrical insulation. The structural design of the layer 125 and the planarization layer 130 directly utilizes the light absorbing layer 140 as an insulating layer for electrically isolating the first electrode layer 150 from the thin film transistor array 120, and is used to planarize the surface of the thin film transistor array 120. .

Specifically, the light absorbing layer 140 is formed of an insulating material and has the effects of optical absorption, electrical isolation, and planarization. In other words, the light absorbing layer 140 simultaneously replaces the flat layer 130 and the electrically insulating layer 125. In this case, the light absorbing layer 140 of the present embodiment is provided with a plurality of through holes (not shown), and the through holes are filled with a conductive material, so that the first electrode layer 150 and the thin film transistor array 120 pass through the through holes. The conductive material in the connection is electrically connected. In this way, the thickness and weight of the organic light emitting diode display device 400 can be further reduced.

In another embodiment, the organic light emitting diode display device 400 of the present embodiment can further design the color filter layer 175 included in the organic light emitting diode display device 200 of the second embodiment. The lamination position and related functions of the color filter layer 175 are not described here.

It is to be noted that the relative positional relationship of the light absorbing layer 140 in the above-described second to fourth embodiments is substantially the same as that of the first embodiment, and is disposed on the thin film transistor array 120 and the first electrode layer 150. between. As such, the light absorbing layer 140 can function as the thin film transistor array 120. The light shielding layer avoids the defect that the thin film transistor array 120 generates a photocurrent effect after irradiating the light of the strong external light source 111, and has the effect of protecting the thin film transistor array 120. In addition, since the light absorbing layer 140 is a completely planar design, the metal conductive lines (not shown) of the thin film transistor array 120 can be simultaneously covered to avoid reflection of the metal conductive lines and reduce other appearance problems.

Please refer to FIG. 5 , which is a schematic diagram of an organic light emitting diode display device 500 according to an embodiment of the invention. Since the organic light emitting diode display device 500 of the present embodiment is similar to the organic light emitting diode display device 100 of the first FIG. 1A embodiment, only the difference between the two will be described below.

As shown in FIG. 5, the organic light-emitting diode display device 500 includes a substrate 115 having a light absorbing function, a thin film transistor array 120, an electrically insulating layer 125, a flat layer 130, and a light-emitting assembly 190. The light emitting component 190 includes a first electrode layer 150, an organic layer 160, and a second electrode layer 170. Generally, the thin film transistor array 120, the electrically insulating layer 125, the planarization layer 130, the first electrode layer 150, the organic layer 160, the second electrode layer 170, and the package board 180 are sequentially stacked on the substrate having the light absorption function. 115 on.

The OLED display device 500 of the present embodiment is different from the OLED display device 100 of FIG. 1A in that the organic light-emitting diode display device 300 of the present embodiment omits the light absorbing layer. The structural design of 140 is to replace the substrate 110 in the organic light-emitting diode display device 100 of FIG. 1A with a substrate 115 having a light absorbing function.

In the embodiment, the substrate 115 having the light absorbing function is in process For example, it may be formed by coating or adding a film or a coating of the same material as the light absorbing layer 140 of the organic light-emitting diode display device 100 of FIG. 1A on a substrate, or directly on the substrate. The material is directly added with a material that absorbs light, which is not limited by this embodiment. Specifically, the optical absorption effect of the substrate 115 having the light absorbing function of the present embodiment is substantially the same as that of the light absorbing layer 140 of the organic light emitting diode display device 100 of FIG. In this way, when the external light source 111 is incident on the organic light emitting diode display device 300 and reaches the substrate 115 having the light absorbing function layer by layer, it will be completely absorbed without reflection, and the brightness and dark contrast on the display can be improved. Effect.

It is to be noted that the electrically insulating layer 125 and the planarization layer 130 of the present embodiment are disposed between the first electrode layer 150 and the thin film transistor array 120 and constitute a composite laminated structure. The composite laminated structure is further provided with a plurality of through holes (not shown), and the through holes are filled with a conductive material, so that the first electrode layer 150 and the thin film transistor array 120 are electrically conductive through the through holes. connection.

In another embodiment, the organic light emitting diode display device 500 of the present embodiment can further design the color filter layer 175 included in the organic light emitting diode display device 200 of the second embodiment. The lamination position and related functions of the color filter layer 175 are not described here.

It can be seen from the description of the above embodiments that the present invention uses a conductive material with high transmittance and low reflectivity as the first electrode layer and the second electrode layer, and then reduces the reflection of the external light source by the light absorbing layer, thereby reducing the addition of an additional optical film. Slice group Necessary. Accordingly, the organic light-emitting diode can have better self-luminous efficiency and can reduce the thickness and weight of the organic light-emitting diode itself. In addition, the light absorbing layer or the substrate with light absorbing function can provide a function of blocking water and oxygen penetration. When considering the overall weight, thickness, and even future flexible application of the light emitting diode display device, the light absorbing layer Or the substrate with light absorption function can make up for the problem of poor sealing effect caused by the use of the plastic substrate, so as to improve the ability to block the penetration of water and oxygen, thereby improving the life of the LED display device.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present case. Anyone skilled in the art can make various changes and refinements without departing from the spirit and scope of the present case. The scope defined in the patent application is subject to change.

100‧‧‧Organic light-emitting diode display device

110‧‧‧Substrate

111‧‧‧External light source

113‧‧‧Self-illumination

120‧‧‧Thin Film Array

125‧‧‧Electrical insulation

130‧‧‧flat layer

140‧‧‧Light absorbing layer

150‧‧‧First electrode layer

160‧‧‧Organic layer

170‧‧‧Second electrode layer

180‧‧‧Package board

190‧‧‧Lighting components

Claims (17)

An organic light emitting diode display device comprising: a substrate; a thin film transistor array disposed on an upper surface of the substrate; a light emitting component disposed on the thin film transistor array and comprising: a first electrode layer Provided on one side of the thin film transistor array; an organic layer disposed on the first electrode layer; and a second electrode layer disposed on the organic layer opposite to the first electrode layer; wherein the first An electrode layer and the second electrode layer have a first transmittance; and a light absorbing layer disposed between the first electrode layer and the thin film transistor array and having a second transmittance; The first transmittance is greater than the second transmittance. The organic light emitting diode display device of claim 1, further comprising an electrically insulating layer disposed on an upper surface of the thin film transistor array for electrically isolating the thin film transistor array. The OLED display device of claim 2, further comprising a flat layer disposed between the light absorbing layer and the electrically insulating layer for planarizing one of the thin film transistor arrays Flat surface. The OLED display device of claim 3, wherein the electrically insulating layer, the planar layer and the light absorbing layer are a composite laminated structure, and the composite laminated structure is provided with a plurality of through holes. The first electrode layer and the thin film transistor array are electrically connected by a conductive material filled in the through holes. The OLED display device of claim 2, wherein the light absorbing layer is formed of an insulating material and serves as a flat layer for planarizing an uneven surface caused by the thin film transistor array. The OLED display device of claim 5, wherein the electrically insulating layer and the light absorbing layer are a composite laminated structure, and the composite laminated structure is provided with a plurality of through holes, the first electrode The layer and the thin film transistor array are electrically connected by a conductive material filled in the through holes. The OLED display device of claim 1, wherein the light absorbing layer is formed of an insulating material and serves as an electrical insulating layer and a flat layer for electrically isolating the thin film transistor array. And flattening one of the uneven surfaces caused by the thin film transistor array. The organic light emitting diode display device of claim 7, wherein the light absorbing layer is provided with a plurality of through holes, and the first electrode layer and the thin film transistor array pass through the conductive material filled in the through holes Incoming call. The organic light emitting diode display device of claim 1, further comprising: a package board disposed on the second electrode layer. The OLED display device of claim 9, further comprising: a color filter layer disposed on the package board and located between the package board and the second electrode layer. The organic light emitting diode display device of claim 1, wherein the light absorbing layer serves as a light shielding layer of the thin film transistor array, and the light absorbing layer further corresponds to a metal conductive line covering the thin film transistor array. An organic light emitting diode display device comprising: a substrate having a light absorbing function; a thin film transistor array disposed on an upper surface of the substrate; and a light emitting component disposed on the thin film transistor array and including a first electrode layer disposed on a side of the thin film transistor array; an organic layer disposed on the first electrode layer; and a second electrode layer disposed on the organic layer opposite to the first electrode layer a layer; wherein the first electrode layer and the second electrode layer have a first transmittance; Wherein the substrate has a second transmittance, and the first transmittance is greater than the second transmittance. The organic light emitting diode display device of claim 12, further comprising an electrically insulating layer disposed on an upper surface of the thin film transistor array for electrically isolating the thin film transistor array. The organic light emitting diode display device of claim 13, further comprising a flat layer disposed between the first electrode layer and the electrically insulating layer for planarizing one of the thin film transistor arrays Uneven surface. The organic light emitting diode display device of claim 14, wherein the electrically insulating layer and the planar layer are a composite laminated structure, and the composite laminated structure is provided with a plurality of through holes, the first electrode layer And the thin film transistor array is electrically connected by a conductive material filled in the through holes. The OLED display device of claim 12, further comprising: a package board disposed on the second electrode layer. The OLED display device of claim 16, further comprising: a color filter layer disposed on the package board and located on the package board And between the second electrode layer.