TWI636600B - Organic light-emitting diode display device - Google Patents

Abstract

This disclosure document discloses an organic light emitting diode display device. The organic light emitting diode display device includes a substrate, a thin film transistor array, a light emitting component, and a light absorbing layer. The thin film transistor array is disposed on the upper surface of the substrate. The light emitting component is disposed on the thin film transistor array and includes a first electrode layer, an organic layer, and a second electrode layer. The first electrode layer is disposed near one side of the thin film transistor array. The organic layer is disposed on the first electrode layer. The second electrode layer is disposed on the organic layer opposite to the first electrode layer. The first electrode layer and the second electrode layer have a first transmittance. The light absorbing layer is disposed between the first electrode layer and the thin film transistor array, and has a second transmittance. The first transmittance is greater than the second transmittance.

Description

Organic light emitting diode display device

The present invention relates to an organic light emitting diode display device, and more particularly, to an organic light emitting diode display device having a light absorbing layer.

Organic light emitting diode displays are regarded as the mainstream technology of the next generation. In the traditional organic light emitting diode display, in order to improve the light emitting efficiency, a material with high reflectivity is used as the driving electrode of the organic light emitting diode, so that the light emitted downward can be reflected upward by the driving electrode below, thereby obtaining a relatively High light output efficiency. In addition, some people have proposed organic light-emitting diode displays with miniature optical resonant cavities. In this technology, in addition to the organic light-emitting diode's lower driving electrode must use a material with high reflectivity, the upper driving electrode must also have a certain The reflectivity of this type of display can provide better color saturation and higher brightness of positive viewing angle, but also has some disadvantages. For example, although the brightness and color saturation of the display are increased in the front view direction, the color of the image with a large viewing angle is distorted, and the brightness is greatly reduced as the viewing angle increases.

In the above technique, although high light extraction efficiency is obtained, It also caused some problems. For example, a highly reflective electrode reflects light incident from the outside, so when the user is under a high-brightness ambient light source (for example, outdoor sunlight), the light reflected from the outside through the panel will seriously affect the original display. The display screen prevents the user from clearly seeing the display screen of the original monitor. In addition, in the micro-optical resonant cavity technology, although this technology can provide better color saturation and higher brightness of the positive viewing angle, it also faces the same problem because it must use electrodes with high optical reflection.

In order to solve the above-mentioned problems, in the conventional technology, an anti-reflection optical film group is added above the display surface of the organic light emitting diode display to reduce the external light reflection phenomenon of the organic light emitting diode panel. The structure of such an anti-reflection optical film group is composed of a polarizer and a 1/4 wave plate. Although the anti-reflection optical film group of this structure solves the problem of reflection of external light, it also causes the brightness loss of the organic light emitting diode display to reach 50% -60% (because the transmittance of a polarizer is only about 40-50 %). In addition, the additional optical film group is an externally attached structure, which results in an increase in the thickness and weight of the overall device. Therefore, it is necessary to propose a new organic light emitting diode display panel to improve the existing technical problems.

In addition, in the conventional technology, a highly reflective electrode of an OLED light-emitting element, which is a highly active electrode, is easily oxidized by external moisture and oxygen, thereby affecting the life of the OLED element. Therefore, the OLED needs a strict packaging process to prevent outside water and oxygen from entering the OLED element. The most commonly used glass substrate is currently used The upper and lower substrates of the OLED element, and the glass substrate is used to achieve lower water resistance and oxygen transmission rate to ensure the life and quality of the OLED element. However, if the overall weight, thickness, and even future applications can be considered, it is inevitable that the upper and lower substrates need to use plastic substrates. However, the use of plastic machine boards will reduce the ability to block water and oxygen, and thus reduce the life and quality of OLED elements.

In view of this, this case uses high-transmittance materials to make electrodes in organic light-emitting diode display devices, and designs a laminate with light absorption under the light-emitting component, thereby effectively improving the light-dark contrast of the display device, and Reduce the loss of luminous efficiency. In addition, the reliability of the organic light emitting diode display device can be further improved, and it is more suitable for flexible applications.

One aspect of the present application is to provide an organic light emitting diode display device. The organic light emitting diode display device includes a substrate, a thin film transistor array, a light emitting component, and a light absorbing layer. The thin film transistor array is disposed on the upper surface of the substrate. The light emitting component is disposed on the thin film transistor array and includes a first electrode layer, an organic layer, and a second electrode layer. The first electrode layer is disposed near one side of the thin film transistor array. The organic layer is disposed on the first electrode layer. The second electrode layer is disposed on the organic layer opposite to the first electrode layer. The first electrode layer and the second electrode layer have a first transmittance. The light absorbing layer is disposed between the first electrode layer and the thin film transistor array, and has a second transmittance. The first transmittance is greater than the second transmittance.

Another aspect of the present application is to provide an organic light emitting diode display device. An organic light emitting diode display device includes a substrate having a light absorption function, a thin Membrane transistor array and light emitting component. The thin film transistor array is disposed on the upper surface of the substrate. The light emitting component is disposed on the thin film transistor array and includes a first electrode layer, an organic layer, and a second electrode layer. The first electrode layer is disposed near one side of the thin film transistor array. The organic layer is disposed on the first electrode layer. The second electrode layer is disposed on the organic layer opposite to the first electrode layer. The first electrode layer and the second electrode layer have a first transmittance and the substrate has a second transmittance, and the first transmittance is greater than the second transmittance.

In summary, by applying the above-mentioned embodiment, a highly transmissive conductive material is used as the first electrode layer and the second electrode layer, and then the light absorption layer is used to reduce reflection of external light sources and reduce the number of additional optical film groups. necessary. According to this, it is possible to avoid the reflection of external light and affect the picture quality, and improve the light-dark contrast of the organic light-emitting diode display device. In addition, since no external optical film group is required, the self-light-emitting efficiency of the organic light-emitting diode display device is not affected, and the thickness and weight of the organic light-emitting diode display device itself can be reduced.

100‧‧‧organic light emitting diode display device

110‧‧‧ substrate

111‧‧‧External light source

113‧‧‧ self-luminous

115‧‧‧ substrate

120‧‧‧ thin film transistor array

125‧‧‧electrical insulation

130‧‧‧ flat layer

140‧‧‧light absorbing layer

150‧‧‧first electrode layer

160‧‧‧ organic layer

161‧‧‧ Hole injection layer

162‧‧‧ Hole Transmission Layer

163‧‧‧Organic light emitting layer

164‧‧‧ Hole barrier

165‧‧‧ electron transfer layer

170‧‧‧Second electrode layer

175‧‧‧color filter

180‧‧‧Packaging board

190‧‧‧Light-emitting components

200‧‧‧Organic light-emitting diode display device

300‧‧‧Organic light-emitting diode display device

400‧‧‧Organic light emitting diode display device

500‧‧‧organic light emitting diode display device

1A-1B are schematic diagrams illustrating an organic light emitting diode display device according to an embodiment of the present invention; FIG. 2 is a schematic diagram illustrating an organic light emitting diode display device according to an embodiment of the present invention; FIG. Is a schematic diagram showing an organic light emitting diode display device according to an embodiment of the present invention; FIG. 4 is a diagram showing an organic light emitting diode display according to an embodiment of the present invention FIG. 5 is a schematic diagram illustrating an organic light emitting diode display device according to an embodiment of the present invention.

The following will clearly illustrate the spirit of the present disclosure with diagrams and detailed descriptions. Any person with ordinary knowledge in the technical field who understands the preferred embodiments of the present disclosure can be changed by the techniques taught in the present disclosure and Modifications do not depart from the spirit and scope of this disclosure.

Regarding the "first", "second", ..., etc. used in this document, they do not specifically refer to the order or order, nor are they used to limit the case. They are only used to distinguish elements or operations described in the same technical terms. .

Regarding the directional terms used in this article, such as: up, down, left, right, front or back, etc., are only directions referring to the attached drawings. Therefore, the terminology used is used to explain and is not used to limit the creation. In addition, the directions "up" and "down" in the content are only used to indicate relative positional relationships. Furthermore, an element formed on another element "on," "above," "below," or "under" may include one element in the embodiment in direct contact with another element, or may include one element and another element There are other additional elements between one element so that one element is not in direct contact with another element.

Please refer to FIG. 1A, which is a schematic diagram illustrating an organic light emitting diode display device 100 according to an embodiment of the present invention. As shown in FIG. 1A, the organic light emitting diode display device 100 includes a substrate 110, a thin film transistor array 120, a light absorption layer 140, and a light emitting element 190. among them, The light emitting device 190 includes a first electrode layer 150, an organic layer 160, and a second electrode layer 170.

More specifically, the thin film transistor array 120 is disposed on an upper surface of the substrate 110. The light-emitting element 190 is disposed on the thin-film transistor array 120, and the first electrode layer 150 in the light-emitting element 190 is disposed near one side of the thin-film transistor array 120. The organic layer 160 is disposed on the first electrode layer 150. The second electrode layer 170 is disposed on the organic layer 160 opposite to the first electrode layer 150. The light absorbing layer 140 is disposed between the light-emitting element 190 and the thin film transistor array 120, and is specifically disposed between the first electrode layer 150 and the thin film transistor array 120.

The organic light emitting diode display device 100 of this embodiment further includes an electrical insulating layer 125 disposed on the upper surface of the thin film transistor array 120. The electrical insulating layer 125 may be, for example, a thin-film layer covering the surface of the thin-film transistor of the thin-film transistor array 120 to provide the electrical isolation effect of the thin-film transistor array 120 and further provide a protective effect to avoid subsequent process damage. Thin film transistor. As the electrical insulating layer 125, materials such as silicon dioxide and silicon nitride can be used.

The organic light emitting diode display device 100 of this embodiment further includes a flat layer 130. The planarization layer 130 is formed of an insulating material and is disposed between the light absorption layer 140 and the electrical insulation layer 125, and is specifically disposed on the upper surface of the electrical insulation layer 125 to planarize the electrical insulation layer 125 and the thin film. The transistor array 120 has an uneven surface due to the thin film transistor array 120 as a whole.

The organic light emitting diode display device 100 of this embodiment is more compact. A packaging board 180 is disposed on the second electrode layer 170 and corresponds to the substrate 110 to package the organic light emitting diode display device 100 to prevent the components therein from contacting with external oxygen and / or water and causing degradation.

As mentioned above, the structure of the organic light emitting diode display device 100 of this embodiment is composed of a thin film transistor array 120, an electrically insulating layer 125, a flat layer 130, a light absorbing layer 140, a first electrode layer 150, and an organic layer. 160, the second electrode layer 170, and the package board 180 are sequentially stacked on the substrate 110. Therefore, since the light absorption layer 140 is integrated inside the organic light emitting diode display device 100 and is disposed below the light emitting component 190, the external light source 111 enters the organic light emitting diode display device 100 and reaches the light layer by layer. When the absorbing layer 140 is completely absorbed without reflection, the light and dark contrast on the display can be improved. In addition, the position of the light absorbing layer 140 does not affect the self-emission 113 generated by the light-emitting component 190, so that the light-emitting efficiency of the organic light-emitting diode display device 100 can be improved. In addition, since there is no need to add an external optical film group as in the conventional technology, the organic light emitting diode display device 100 as a whole can avoid an increase in thickness and weight.

In principle, when the first electrode layer 150 and the second electrode layer 170 are connected to a voltage source or a current source, the electrons and holes of the organic layer 160 will move and combine with the voltage, converting energy from electrical energy into visible light. . In addition, if the organic layer 160 is matched with different organic materials, different color lights can be generated to achieve a colorful or full-color display effect.

In operation, the thin film transistor array 120 is used as a control element for electrically connecting the first electrode layer 150. In this embodiment, the design of the electrical insulating layer 125, the flat layer 130, and the light absorbing layer 140 are all insulating layers. And constitute a relationship of a composite laminated structure. The composite laminated structure is provided with a plurality of through holes (not shown), and conductive materials are filled in the through holes, so that the first electrode layer 150 and the thin film transistor array 120 are electrically conducted through the through holes. Material call connection. It should be noted that when the first electrode layer 150 and the second electrode layer 170 are connected to a voltage source or a current source, the polarity of the first electrode layer 150 and the polarity of the second electrode layer 170 are different. For example, when the first electrode layer 150 is positive, the second electrode layer 170 is negative; conversely, when the first electrode layer 150 is negative, the second electrode layer 170 is positive.

It is further explained that the first electrode layer 150 and the second electrode layer 170 in this embodiment have a high first transmittance of approximately greater than 70%. Preferably, the first electrode layer 150 and the second electrode layer 170 are made of a material having low activity and having both optical low reflectance and high transmittance. For example, indium tin oxide (ITO), indium oxide can be used. Indium zinc oxide (IZO), aluminum zinc oxide (AZO), indium tin zinc oxide (ITZO), cadmium tin oxide (CTO), tin oxide, tin oxide, Zinc oxide, cadmium oxide, indium gallium zinc oxide (InGaZnO), indium gallium zinc magnesium oxide (InGaZnMgO), indium gallium aluminum formed of materials such as oxide (InGaAlO) or indium gallium magnesium oxide (InGaMgO), but is not limited thereto. In order to have a better optical absorption effect, the light absorption layer 140 of this embodiment is designed to have a lower second transmittance, and the second transmittance is less than about 30%. For example, the light absorbing layer 140 may be formed of a black or dark optical absorbing material, such as a dyeing material, graphite, carbon material, etc., which is not actually limited by this case. In contrast, in this embodiment, the first transmittance of the first electrode layer 150 and the second electrode layer 170 is greater than the second transmittance of the light absorption layer 140.

In addition, in order to reduce the optical reflection effect of the organic light emitting diode display device 100, the material of the first electrode layer 150, the second electrode layer 170, and the light absorption layer in this embodiment may be further selected to have a lower reflectance. The characteristic materials preferably have a reflectance of less than 30%.

It is further explained that the organic layer 160 in this embodiment is actually a structural design of a composite layer. As shown in FIG. 1B, the organic layer 160 may include, for example, a hole injection layer (HIL) 161 and a hole transfer layer (HTL). 162, organic light emitting layer (EML) 163, hole blocking layer (HBL) 164, and electron transfer layer (ETL) 165, and are sequentially disposed on the first electrode layer 150 and located on the first electrode layer 150 and the second electrode layer Between 170. It should be understood that the structure of each layer in the organic layer 160 is not limited by this embodiment, and the design can be adjusted according to actual needs.

Please refer to FIGS. 1A and 1B together. When the first electrode layer 150 and the second electrode layer 170 are connected to a voltage source or a current source, the organic light-emitting layer 163 generates self-emission 113 and the generated self-emission 113 will emit upward. And launch downwards. Since the second electrode layer 170 has a high transmittance, the self-luminescence 113 generated by the organic light emitting layer 163 is emitted upward through the second electrode layer 170. When the organic light-emitting layer 163 generates a downward self-luminescence 113, the downward self-luminescence 113 penetrates the first electrode layer 150 and is emitted to the light absorption layer 140. In other words, this embodiment The organic light emitting diode display device 100 of the embodiment is a top emission type. At this time, the light absorption layer 140 has a low reflectance and a low transmittance. The light absorption layer 140 absorbs the downward self-emission 113 of the organic light-emitting layer 163 and does not reflect this downward self-emission 113.

As can be seen from the above description, both the first electrode layer 150 and the second electrode layer 170 have characteristics of high transmittance and low reflectance. In addition, the organic light emitting diode display device 100 has the characteristics of self-luminous 113. Therefore, when the organic light emitting diode display device 100 is in a high-illuminance light source environment, the external light source 111 passes through the transparent second electrode layer 170 and the first An electrode layer 150 directly enters the light absorption layer 140 and is absorbed by the light absorption layer 140. At the same time, the first electrode layer 150 and the second electrode layer 170 can also reduce the reflected light from the external light source 111 and improve the organic light emitting diode as a whole. Comparison of the volume display device 100. In addition, the position of the light absorbing layer 140 does not affect the upward self-emission 113 generated by the light-emitting component 190, which can effectively improve the light-emitting efficiency of the organic light-emitting diode display device 100.

In other embodiments of the present invention, the light absorbing layer 140 may further have a single-layer dense organic or inorganic material structure, or a multilayer structure in which a composite organic material and an inorganic material are interlaced. The specific effect can be to isolate water vapor and oxygen from the outside, or to adsorb water vapor and oxygen, or to simultaneously isolate and adsorb water oxygen, so as to prevent water vapor and oxygen from penetrating into the interior of the light-emitting component 190. Function to improve the reliability of the organic light emitting diode display device 100.

Finally, it is added that the light absorbing layer 140 in this embodiment is disposed between the thin film transistor array 120 and the first electrode layer 150. Therefore, the light absorbing layer 140 can be used as a light shielding layer of the thin film transistor array 120 to avoid the defect of the photocurrent effect caused by the thin film transistor array 120 after irradiating the light from the strong external light source 111 and further protect the thin film transistor array 120 Effect. In addition, since the light absorbing layer 140 is a complete planar design, it can cover the metal conductive circuits (not shown) of the thin film transistor array 120 at the same time to avoid reflection of the metal conductive circuits and reduce other appearance problems.

Please refer to FIG. 2, which is a schematic diagram illustrating an organic light emitting diode display device 200 according to an embodiment of the present invention. The organic light-emitting diode display device 200 of this embodiment is similar to the organic light-emitting diode display device 100 of the embodiment shown in FIG. 1A. The difference is that the organic light-emitting diode display device 200 of this embodiment further includes a color The filter layer 175 is disposed on the packaging plate 180 and is located between the packaging plate 180 and the second electrode layer 170. Wherein, the color filter layer 175 can be manufactured by using the packaging board 180 as a base material and manufacturing a plurality of color blocks (not shown) thereon. The color filter layer 175 further has an optical absorption effect. For example, taking a red color block as an example, the color filter layer 175 allows the red band of the external light source 111 to pass through and absorbs bands of other colors. In this way, the color filter layer 175 will absorb part of the light sources of the external light source 111, and the remaining external light sources 111 that are not absorbed by the color filter layer 175 will pass through the color filter layer 175 and the second electrode layer 170 layer by layer. The organic layer 160 and the first electrode layer 150 enter the light absorption layer 140 and are absorbed by the light absorption layer 140. In this case, the external light source 111 will be absorbed by the color filter layer 175 and the light absorption layer 140, and the probability of reflection of the external light source 111 will be further reduced. Under the high brightness of the environment, the organic light emitting diode display device 200 can have better visibility.

In addition, the positions of the plurality of color blocks of the color filter layer 175 correspond to the sub-pixels of the organic light emitting diode display device 200 itself. For example, the red block of the color filter layer 175 corresponds to the red sub-pixel of the organic light emitting diode display device 200, and so on. The above-mentioned red blocks are only used as examples for explanation, and are not intended to limit the present invention. The function of the color filter layer of any color block is within the protection scope of the present invention.

Please refer to FIG. 3, which is a schematic diagram of an organic light emitting diode display device 300 according to an embodiment of the present invention. Since the organic light emitting diode display device 300 of this embodiment is similar to the organic light emitting diode display device 100 of the embodiment in FIG. 1A described above, only the differences between the two will be described below.

As shown in FIG. 3, the organic light emitting diode display device 300 includes a substrate 110, a thin film transistor array 120, an electrical insulating layer 125, a light absorption layer 140, and a light emitting element 190. The light emitting device 190 includes a first electrode layer 150, an organic layer 160, and a second electrode layer 170. Generally speaking, the thin film transistor array 120, the electrical insulating layer 125, the light absorption layer 140, the first electrode layer 150, the organic layer 160, the second electrode layer 170, and the package board 180 are sequentially stacked on the substrate 110.

The organic light emitting diode display device 300 of this embodiment is different from the organic light emitting diode display device 100 of FIG. 1A in that the organic light emitting diode display device 300 of this embodiment omits the flat layer 130. Structure design, but directly use the light absorption layer 140 to planarize the thin film The surface of the transistor array 120.

Specifically, the light absorption layer 140 of this embodiment has the effects of optical absorption and planarization. In other words, the light absorbing layer 140 replaces the flat layer 130. In this case, the electrical insulating layer 125 and the light absorbing layer 140 of this embodiment are in a relationship of forming a composite laminated structure. The composite laminated structure is provided with a plurality of through holes (not shown), and the through holes are filled with a conductive material, so that the first electrode layer 150 and the thin film transistor array 120 are electrically connected through the conductive material in the through holes. . In this way, the thickness and weight of the organic light emitting diode display device 300 can be further reduced.

In another embodiment, the organic light emitting diode display device 300 of this embodiment may further include a color filter layer 175 included in the organic light emitting diode display device 200 of the embodiment shown in FIG. 2. The stacking position and related functions of the color filter layer 175 are not described in detail here.

Please refer to FIG. 4, which is a schematic diagram illustrating an organic light emitting diode display device 400 according to an embodiment of the present invention. Since the organic light emitting diode display device 400 of this embodiment is similar to the organic light emitting diode display device 100 of the aforementioned embodiment in FIG. 1A, only the differences between the two will be described below.

As shown in FIG. 4, the organic light emitting diode display device 400 includes a substrate 110, a thin film transistor array 120, a light absorption layer 140, and a light emitting element 190. The light emitting device 190 includes a first electrode layer 150, an organic layer 160, and a second electrode layer 170. Generally speaking, the thin film transistor array 120, the light absorption layer 140, the first electrode layer 150, the organic layer 160, and the second electrode layer 170 and the package board 180 are sequentially stacked on the substrate 110.

The organic light emitting diode display device 400 of this embodiment is different from the organic light emitting diode display device 100 of FIG. 1A in that the organic light emitting diode display device 400 of this embodiment omits electrical insulation. The structural design of the layer 125 and the flat layer 130 directly utilizes the light absorbing layer 140 as an insulating layer that electrically isolates the first electrode layer 150 from the thin film transistor array 120 and is used to planarize the surface of the thin film transistor array 120 .

Specifically, the light absorbing layer 140 is formed of an insulating material, and has the effects of optical absorption, electrical isolation, and planarization. In other words, the light absorbing layer 140 replaces the flat layer 130 and the electrical insulating layer 125 at the same time. In this case, the light absorption layer 140 of this embodiment is provided with a plurality of through holes (not shown), and the through holes are filled with a conductive material, so that the first electrode layer 150 and the thin film transistor array 120 pass through the through holes. Electrically conductive material in the connection. In this way, the thickness and weight of the organic light emitting diode display device 400 can be further reduced.

In another embodiment, the organic light emitting diode display device 400 of this embodiment may further include a color filter layer 175 included in the organic light emitting diode display device 200 of the embodiment shown in FIG. 2. The stacking position and related functions of the color filter layer 175 are not described in detail here.

It is explained again that the relative positional relationship of the light absorbing layer 140 in the embodiments of FIGS. 2 to 4 is approximately the same as that of the embodiment of FIG. 1A, and they are provided in the thin film transistor array 120 and the first electrode layer 150. between. In this way, the light absorbing layer 140 can be used as a thin film transistor array 120 The light-shielding layer avoids the defect that the thin-film transistor array 120 generates a photocurrent effect after irradiating the light from the strong external light source 111, and has the effect of protecting the thin-film transistor array 120. In addition, since the light absorbing layer 140 is a complete planar design, it can cover the metal conductive circuits (not shown) of the thin film transistor array 120 at the same time to avoid reflection of the metal conductive circuits and reduce other appearance problems.

Please refer to FIG. 5, which is a schematic diagram illustrating an organic light emitting diode display device 500 according to an embodiment of the present invention. Since the organic light emitting diode display device 500 of this embodiment is similar to the organic light emitting diode display device 100 of the aforementioned embodiment in FIG. 1A, only the differences between the two will be described below.

As shown in FIG. 5, the organic light emitting diode display device 500 includes a substrate 115 having a light absorption function, a thin film transistor array 120, an electrical insulating layer 125, a flat layer 130, and a light emitting element 190. The light emitting device 190 includes a first electrode layer 150, an organic layer 160, and a second electrode layer 170. Generally speaking, the thin film transistor array 120, the electrically insulating layer 125, the flat layer 130, the first electrode layer 150, the organic layer 160, the second electrode layer 170, and the packaging plate 180 are sequentially stacked on a substrate having a light absorption function. 115 on.

The organic light emitting diode display device 500 of this embodiment is different from the organic light emitting diode display device 100 of FIG. 1A in that the organic light emitting diode display device 500 of this embodiment omits a light absorption layer. The structural design of 140 is to replace the substrate 110 in the organic light emitting diode display device 100 of FIG. 1A with a substrate 115 having a light absorption function.

In this embodiment, a substrate 115 having a light absorption function is being manufactured. For example, it can be made by coating or adding a thin film or coating of the same material as the light absorption layer 140 of the organic light emitting diode display device 100 of FIG. 1A on a substrate, or directly on the substrate. It is made by directly adding a material that can absorb light in the production of the material, which is not limited in this embodiment. Specifically, the optical absorption effect of the substrate 115 with a light absorption function in this embodiment is substantially the same as the effect of the light absorption layer 140 of the organic light emitting diode display device 100 of FIG. 1A. In this way, the external light source 111 enters the organic light emitting diode display device 500, and when it reaches the substrate 115 having the light absorption function layer by layer, it will be completely absorbed without reflection, and the brightness and dark contrast on the display can also be improved. Effect.

It is further explained that the electrical insulating layer 125 and the flat layer 130 in this embodiment are disposed between the first electrode layer 150 and the thin-film transistor array 120 and form a composite stacked structure. The composite laminated structure is further provided with a plurality of through holes (not shown), and the through holes are filled with a conductive material, so that the first electrode layer 150 and the thin film transistor array 120 are electrically conductive through the conductive material in the through holes. connection.

In another embodiment, the organic light emitting diode display device 500 of this embodiment may further include a color filter layer 175 included in the organic light emitting diode display device 200 of the embodiment shown in FIG. 2. The stacking position and related functions of the color filter layer 175 are not described in detail here.

It can be known from the description of the foregoing embodiments that the present invention uses a conductive material with high transmittance and low reflectance as the first electrode layer and the second electrode layer, and then uses a light absorption layer to reduce the reflection of external light sources and reduce the addition of additional optical films. Film group Necessary. Accordingly, the organic light emitting diode can have better self-luminous efficiency, and can further reduce the thickness and weight of the organic light emitting diode itself. In addition, a light-absorbing layer or a substrate with a light-absorbing function can provide a function of blocking water and oxygen penetration. When considering the overall weight and thickness of the light-emitting diode display device, and even future flexible applications, the light-absorbing layer Or the substrate with light absorption function can make up for the problem of poor sealing effect caused by the use of a plastic substrate, so as to improve the ability to prevent water and oxygen from penetrating, thereby increasing the life of the light emitting diode display device.

Although this case has been disclosed as above with examples, it is not intended to limit this case. Any person skilled in this art can make various modifications and retouches without departing from the spirit and scope of this case. Therefore, the scope of protection of this case should be considered after The attached application patent shall prevail.

Claims (19)

An organic light emitting diode display device includes: a substrate; a thin film transistor array disposed on an upper surface of the substrate; a light emitting component disposed on the thin film transistor array and including: a first electrode layer Is disposed near one side of the thin film transistor array; an organic layer is disposed on the first electrode layer; and a second electrode layer is disposed on the organic layer opposite to the first electrode layer; wherein the first An electrode layer and the second electrode layer have a first transmittance; and a light absorbing layer is disposed between the first electrode layer and the thin film transistor array and has a second transmittance; wherein, The first transmittance is greater than the second transmittance, wherein the first transmittance is greater than 70%, and the second transmittance is less than 30%. The organic light emitting diode display device according to claim 1, further comprising an electrical insulating layer disposed on an upper surface of the thin film transistor array to electrically isolate the thin film transistor array. The organic light emitting diode display device according to claim 2, further comprising a flat layer disposed between the light absorbing layer and the electrical insulating layer to planarize one of the electrodes caused by the thin film transistor array. Flat surface. The organic light emitting diode display device according to claim 3, wherein the electrical insulating layer, the flat layer, and the light absorption layer are a composite laminated structure, and the composite laminated structure is provided with a plurality of through holes, The first electrode layer and the thin film transistor array are electrically connected through a conductive material filled in the through holes. The organic light emitting diode display device according to claim 2, wherein the light absorption layer is formed of an insulating material and serves as a flat layer for flattening an uneven surface caused by the thin film transistor array. The organic light emitting diode display device according to claim 5, wherein the electrical insulating layer and the light absorption layer are a composite laminated structure, and the composite laminated structure is provided with a plurality of through holes, and the first electrode The layer and the thin film transistor array are electrically connected through the conductive material filled in the through holes. The organic light emitting diode display device according to claim 1, wherein the light absorption layer is formed of an insulating material, and simultaneously serves as an electrical insulating layer and a flat layer to electrically isolate the thin film transistor array And flattening an uneven surface caused by the thin film transistor array. The organic light emitting diode display device according to claim 7, wherein the light absorption layer is provided with a plurality of through holes, and the first electrode layer and the thin film transistor array pass through the conductive material filled in the through holes. Incoming call connection. The organic light emitting diode display device according to claim 1, further comprising: a packaging board disposed on the second electrode layer. The organic light emitting diode display device according to claim 9, further comprising: a color filter layer disposed on the packaging board and located between the packaging board and the second electrode layer. The organic light emitting diode display device according to claim 1, wherein the first electrode layer, the second electrode layer, and the light absorption layer each have a reflectivity of less than 30%. The organic light emitting diode display device according to claim 1, wherein the light absorption layer serves as a light shielding layer of the thin film transistor array, and the light absorption layer further corresponds to a metal conductive line covering the thin film transistor array. An organic light-emitting diode display device includes: a substrate having a light absorption function; a thin-film transistor array disposed on an upper surface of the substrate; and a light-emitting component disposed on the thin-film transistor array and including : A first electrode layer is disposed near one side of the thin film transistor array; an organic layer is disposed on the first electrode layer; and a second electrode layer is disposed on the organic layer opposite to the first electrode layer Layer; wherein the first electrode layer and the second electrode layer have a first transmittance; wherein the substrate has a second transmittance, and the first transmittance is greater than the second transmittance, The first transmittance is greater than 70%, and the second transmittance is less than 30%. The organic light emitting diode display device according to claim 13, further comprising an electrical insulating layer disposed on an upper surface of the thin film transistor array to electrically isolate the thin film transistor array. The organic light emitting diode display device according to claim 14, further comprising a flat layer disposed between the first electrode layer and the electrical insulating layer to planarize one of the thin film transistor arrays. Uneven surface. The organic light emitting diode display device according to claim 15, wherein the electrical insulating layer and the flat layer are a composite laminated structure, and the composite laminated structure is provided with a plurality of through holes, and the first electrode layer And the thin film transistor array is electrically connected through the conductive material filled in the through holes. The organic light emitting diode display device according to claim 13, further comprising: a packaging board disposed on the second electrode layer. The organic light emitting diode display device according to claim 17, further comprising: a color filter layer disposed on the packaging board and located between the packaging board and the second electrode layer. The organic light emitting diode display device according to claim 13, wherein the first electrode layer, the second electrode layer, and the substrate with light absorption function each have a reflectance of less than 30%.