TWM540366U - Pixel circuit - Google Patents

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TWM540366U
TWM540366U TW105214117U TW105214117U TWM540366U TW M540366 U TWM540366 U TW M540366U TW 105214117 U TW105214117 U TW 105214117U TW 105214117 U TW105214117 U TW 105214117U TW M540366 U TWM540366 U TW M540366U
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transistor
voltage
reference voltage
driving transistor
pixel
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TW105214117U
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Chinese (zh)
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劉柏村
鄭光廷
蔡承諭
周凱茹
吳哲耀
陳辰恩
江宜達
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凌巨科技股份有限公司
國立交通大學
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Publication of TWM540366U publication Critical patent/TWM540366U/en

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Abstract

A pixel circuit includes a switching transistor, an inverter circuit, a first driving transistor, a second driver transistor, a coupling capacitor, a bootstrap capacitor and a liquid crystal capacitor is provided. The switching transistor receives a pixel voltage and a scanning signal. The inverter circuit coupled to the switching transistor to receive the pixel voltage, and provides an inverted pixel voltage. The first drive transistor receives a first reference voltage and the inverted pixel voltage. The second drive transistor receives a second reference voltage and the pixel voltage. The coupling capacitor is coupled between the second reference voltage and the second driving transistor. The bootstrap capacitor is coupled between the second drive transistor and the liquid crystal capacitor. The liquid crystal capacitor is coupled to the first driving transistor, the second driving transistor and the first reference voltage.

Description

畫素電路Pixel circuit

本新型創作是有關於一種電路佈局,且特別是有關於一種畫素電路。The novel creation is related to a circuit layout, and in particular to a pixel circuit.

由於薄膜電晶體液晶顯示器(TFT-LCDs, Thin Film Transistor Liquid Crystal Displays)具有高畫質、空間利用效率佳、低消耗功率、無輻射等特點,儼然已成為現代顯示科技產品的主流。相對於多晶矽薄膜電晶體(Poly-Si TFT)而言,使用非晶矽薄膜電晶體(a-Si TFT)所製作的顯示器更能夠降低生產成本,且能夠在低溫下製作在大面積的玻璃基板上,提高生產速率。Since Thin Film Transistor Liquid Crystal Displays (TFT-LCDs) have high image quality, good space utilization efficiency, low power consumption, and no radiation, they have become the mainstream of modern display technology products. Compared with a polycrystalline silicon transistor (Poly-Si TFT), a display made of an amorphous germanium thin film transistor (a-Si TFT) can reduce the production cost and can be fabricated on a large-area glass substrate at a low temperature. On, increase the production rate.

隨著液晶顯示器的功率消耗問題越來越被重視,許多顯示產品開始研發省功率的方案,其一就是使用畫素內的記憶電路(memory in pixel circuit,MIP),以降低資料驅動電路(Data driver)的功耗。然而,目前大部分使用多晶矽薄膜電晶體設計畫素內的記憶電路,但畫素內的記憶電路無法應用在使用非晶矽薄膜電晶體的大型看板或電子標籤上,因此必須以嶄新的方式去設計畫素內的記憶電路,以利用非晶矽薄膜電晶體達到與多晶矽薄薄電晶體相同的效果。As the power consumption of liquid crystal displays becomes more and more important, many display products have begun to develop a power-saving scheme. One is to use a memory in pixel circuit (MIP) to reduce the data driving circuit (Data Driver) power consumption. However, most of the current polycrystalline germanium film transistors are used to design memory circuits in pixels, but the memory circuits in pixels cannot be applied to large billboards or electronic tags using amorphous germanium film transistors, so they must be taken in a new way. The memory circuit in the design pixel is used to achieve the same effect as the polycrystalline silicon thin transistor by using the amorphous germanium thin film transistor.

本新型創作提供一種畫素電路,具有記憶電路,以在低畫面更新率下,避免液晶被極化。The novel creation provides a pixel circuit with a memory circuit to prevent the liquid crystal from being polarized at a low picture update rate.

本新型創作的畫素電路,包括一開關電晶體、一反相電路、一第一驅動電晶體、一第二驅動電晶體、一耦合電容、一靴帶電容及一液晶電容。開關電晶體的一第一端接收一畫素電壓,開關電晶體的一控制端接收一掃描信號。反相電路耦接開關電晶體的一第二端以接收畫素電壓,並且提供一反相畫素電壓。第一驅動電晶體的一第一端接收一第一參考電壓,第一驅動電晶體的一控制端耦接反相電路以接收反相畫素電壓。第二驅動電晶體的一第一端接收一第二參考電壓,第二驅動電晶體的一控制端接收畫素電壓,第二驅動電晶體的一第二端耦接第一驅動電晶體的一第二端。耦合電容耦接於第二參考電壓與第二驅動電晶體的控制端之間。靴帶電容耦接於第二驅動電晶體的控制端與第二驅動電晶體的第二端之間。液晶電容耦接於第一驅動電晶體的第二端與第一參考電壓之間。The pixel circuit of the present invention comprises a switching transistor, an inverting circuit, a first driving transistor, a second driving transistor, a coupling capacitor, a shoe capacitor and a liquid crystal capacitor. A first end of the switching transistor receives a pixel voltage, and a control terminal of the switching transistor receives a scanning signal. The inverting circuit is coupled to a second end of the switching transistor to receive the pixel voltage and to provide an inverted pixel voltage. A first terminal of the first driving transistor receives a first reference voltage, and a control terminal of the first driving transistor is coupled to the inverter circuit to receive the inverted pixel voltage. A first end of the second driving transistor receives a second reference voltage, a control end of the second driving transistor receives the pixel voltage, and a second end of the second driving transistor is coupled to the first driving transistor Second end. The coupling capacitor is coupled between the second reference voltage and the control terminal of the second driving transistor. The boot strap is capacitively coupled between the control end of the second drive transistor and the second end of the second drive transistor. The liquid crystal capacitor is coupled between the second end of the first driving transistor and the first reference voltage.

基於上述,本新型創作實施例的畫素電路,其透過反相電路、第一驅動電晶體、第二驅動電晶體、耦合電容及靴帶電容自動變換液晶電容跨壓的極性,以在低畫面更新率下,避免液晶被極化。Based on the above, the pixel circuit of the novel creation embodiment automatically converts the polarity of the liquid crystal capacitor across the voltage through the inverter circuit, the first driving transistor, the second driving transistor, the coupling capacitor, and the shoe band capacitance to At the update rate, avoid the liquid crystal being polarized.

為讓本新型創作的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。The above described features and advantages of the present invention will become more apparent and understood from the following description.

圖1為依據本新型創作一實施例的畫素電路的電路示意圖。請參照圖1,在本實施例中,畫素電路100包括開關電晶體TSW、反相電路INT、第一驅動電晶體TD1、第二驅動電晶體TD2、耦合電容Ccp、靴帶電容Cbs及液晶電容Clc。其中,反相電路INT、第一驅動電晶體TD1、第二驅動電晶體TD2、耦合電容Ccp及靴帶電容Cbs可視為畫素電路100內的記憶電路。1 is a circuit diagram of a pixel circuit in accordance with an embodiment of the present invention. Referring to FIG. 1, in the embodiment, the pixel circuit 100 includes a switching transistor TSW, an inverting circuit INT, a first driving transistor TD1, a second driving transistor TD2, a coupling capacitor Ccp, a shoe capacitor Cbs, and a liquid crystal. Capacitor Clc. The inverter circuit INT, the first driving transistor TD1, the second driving transistor TD2, the coupling capacitor Ccp, and the shoe capacitor Cbs can be regarded as a memory circuit in the pixel circuit 100.

開關電晶體TSW的汲極(對應第一端)接收資料驅動電路(未繪示)所提供的畫素電壓Vdata,開關電晶體TSW的閘極(對應控制端)接收閘極驅動電路(未繪示)提供的掃描信號Sscan。反相電路INT耦接開關電晶體TSW的源極(對應第二端)以接收開關電晶體TSW所傳送的畫素電壓Vdata,並且提供反相畫素電壓VBdata。第一驅動電晶體TD1的汲極(對應第一端)接收電源供應器(未繪示)所提供的第一參考電壓Vref1,第一驅動電晶體TD1的閘極(對應控制端)耦接反相電路INT以接收反相畫素電壓VBdata。The drain (corresponding to the first end) of the switching transistor TSW receives the pixel voltage Vdata provided by the data driving circuit (not shown), and the gate (corresponding control terminal) of the switching transistor TSW receives the gate driving circuit (not drawn Show) the scan signal Sscan provided. The inverting circuit INT is coupled to the source of the switching transistor TSW (corresponding to the second end) to receive the pixel voltage Vdata transmitted by the switching transistor TSW, and to provide the inverted pixel voltage VBdata. The drain (corresponding to the first end) of the first driving transistor TD1 receives the first reference voltage Vref1 provided by the power supply (not shown), and the gate (corresponding control end) of the first driving transistor TD1 is coupled to the opposite The phase circuit INT receives the inverted pixel voltage VBdata.

第二驅動電晶體TD2的汲極(對應第一端)接收電源供應器(未繪示)所提供的第二參考電壓Vref2,第二驅動電晶體TD2的閘極(對應控制端)接收畫素電壓Vdata,第二驅動電晶體TD的源極(對應第二端)耦接第一驅動電晶體TD1的源極(對應第二端)。耦合電容Ccp耦接於二參考電壓Vref2與第二驅動電晶體TD2的閘極之間。靴帶電容Cbs耦接於第二驅動電晶體TD2的閘極與第二驅動電晶體TD2的源極之間。液晶電容Clc耦接於第一驅動電晶體TD1的源極與第一參考電壓Vref1之間。The drain of the second driving transistor TD2 (corresponding to the first end) receives the second reference voltage Vref2 provided by the power supply (not shown), and the gate of the second driving transistor TD2 (corresponding to the control terminal) receives the pixel The source (corresponding to the second end) of the second driving transistor TD is coupled to the source (corresponding to the second end) of the first driving transistor TD1. The coupling capacitor Ccp is coupled between the two reference voltages Vref2 and the gate of the second driving transistor TD2. The shoe strap capacitor Cbs is coupled between the gate of the second driving transistor TD2 and the source of the second driving transistor TD2. The liquid crystal capacitor Clc is coupled between the source of the first driving transistor TD1 and the first reference voltage Vref1.

在本實施例中,反相電路INT包括第一電晶體T1、第二電晶體T2及第三電晶體T3。第一電晶體T1的汲極(對應第一端)及閘極(對應控制端)接收第一參考電壓Vref1,第一電晶體T1的源極(對應第二端)提供反相畫素電壓VBdata。第二電晶體T2的汲極(對應第一端)及閘極(對應控制端)接收第二參考電壓Vref2,第二電晶體T2的源極(對應第二端)耦接第一電晶體T1的源極。第三電晶體T3的汲極(對應第一端)耦接第一電晶體T1的源極,第三電晶體T3的閘極(對應控制端)接收畫素電壓Vdata,第三電晶體T3的源極(對應第二端)接收接地電壓。In the present embodiment, the inverter circuit INT includes a first transistor T1, a second transistor T2, and a third transistor T3. The drain (corresponding to the first end) of the first transistor T1 and the gate (corresponding to the control terminal) receive the first reference voltage Vref1, and the source (corresponding to the second end) of the first transistor T1 provides the inverted pixel voltage VBdata . The drain (corresponding to the first end) of the second transistor T2 and the gate (corresponding to the control terminal) receive the second reference voltage Vref2, and the source (corresponding to the second end) of the second transistor T2 is coupled to the first transistor T1 The source. The drain of the third transistor T3 (corresponding to the first end) is coupled to the source of the first transistor T1, and the gate of the third transistor T3 (corresponding to the control terminal) receives the pixel voltage Vdata, and the third transistor T3 The source (corresponding to the second end) receives the ground voltage.

在本實施例中,開關電晶體TSW、第一驅動電晶體TD1、第二驅動電晶體TD2、第一電晶體T1、第二電晶體T2及第三電晶體T3分別為一非晶矽(a-Si)薄膜電晶體、並且開關電晶體TSW、第一驅動電晶體TD1、第二驅動電晶體TD2、第一電晶體T1、第二電晶體T2及第三電晶體T3分別為一N型薄膜電晶體。其中,第三電晶體T3的長寬比大於第一電晶體T1及第二電晶體T2的長寬比。In this embodiment, the switching transistor TSW, the first driving transistor TD1, the second driving transistor TD2, the first transistor T1, the second transistor T2, and the third transistor T3 are respectively an amorphous germanium (a -Si) thin film transistor, and switching transistor TSW, first driving transistor TD1, second driving transistor TD2, first transistor T1, second transistor T2 and third transistor T3 are respectively an N-type film Transistor. The aspect ratio of the third transistor T3 is greater than the aspect ratio of the first transistor T1 and the second transistor T2.

圖2為依據本新型創作一實施例的畫素電路的驅動波形示意圖。請參照圖1及圖2,在本實施例中,假設一個畫面期間(如期間PF1、PF2)的時間長度為1秒,亦即畫素100的畫面更新率為1赫茲(Hz),此時開關電晶體TSW的導通頻率為1赫茲(Hz)。並且,假設一個畫面期間(如期間PF1、PF2)分別三個時間區段(如期間T1~T3或T4~T6),其中期間T3(或T6)的時間長度可等於期間T1、T2(或T4、T5)的時間長度的總和。2 is a schematic diagram of driving waveforms of a pixel circuit in accordance with an embodiment of the present invention. Referring to FIG. 1 and FIG. 2, in the present embodiment, it is assumed that the duration of one picture period (eg, periods PF1, PF2) is 1 second, that is, the picture update rate of the pixel 100 is 1 Hz (Hz). The switching transistor TSW has a conduction frequency of 1 hertz (Hz). Also, assume that one picture period (eg, periods PF1, PF2) is three time segments (eg, period T1~T3 or T4~T6), wherein the length of time period T3 (or T6) may be equal to period T1, T2 (or T4) The sum of the lengths of time, T5).

此外,第一參考電壓Vref1及第二參考電壓Vref2分別為一交流電壓,第一參考電壓Vref1及第二參考電壓Vref2分別為系統高電壓VH及系統低電壓VL,並且第一參考電壓Vref1及第二參考電壓Vref2的頻率等於2赫茲。In addition, the first reference voltage Vref1 and the second reference voltage Vref2 are respectively an alternating voltage, and the first reference voltage Vref1 and the second reference voltage Vref2 are a system high voltage VH and a system low voltage VL, respectively, and the first reference voltage Vref1 and the first The frequency of the second reference voltage Vref2 is equal to 2 Hz.

在期間T1中,掃描信號Sscan會致能(enable),而開關電晶體TSW藉由掃描信號Sscan的抬升而導通,以致於為系統高電壓VH的畫素電壓Vdata會傳送至節點A。此時,電晶體T3及第二驅動電晶體TD2呈現導通,因此反相畫素電壓VBdata為系統低電壓VL,以致於第一驅動電晶體TD1會截止,並且因第二參考電壓Vref2為系統低電壓VL,以致於節點B的電壓準位為系統低電壓VL。此時,液晶電容Clc兩端的跨壓VLC為VL-VH=-VH。In the period T1, the scan signal Sscan is enabled, and the switching transistor TSW is turned on by the rise of the scan signal Sscan, so that the pixel voltage Vdata which is the system high voltage VH is transmitted to the node A. At this time, the transistor T3 and the second driving transistor TD2 are turned on, so the inverted pixel voltage VBdata is the system low voltage VL, so that the first driving transistor TD1 is turned off, and the second reference voltage Vref2 is low. The voltage VL is such that the voltage level of the node B is the system low voltage VL. At this time, the voltage VLC across the liquid crystal capacitor Clc is VL-VH=-VH.

在期間T2中,掃描信號Sscan會禁能(disable),但節點A、B與反相畫素電壓VBdata的電壓準位保持與期間T1相同,亦即跨壓VLC仍保持為-VH。In the period T2, the scan signal Sscan is disabled, but the voltage levels of the nodes A, B and the inverted pixel voltage VBdata remain the same as the period T1, that is, the voltage VLC remains at -VH.

在期間T3中,第一參考電壓Vref1由系統高電壓VH轉變為系統低電壓VL,第二參考電壓Vref2由系統低電壓VL轉變為系統高電壓VH。此時,透過耦合電容Ccp,節點A的電壓準位會耦合至系統高電壓VH+ΔV,亦即節點A的電壓準位耦合至更高的電壓準位,以致於系統高電壓VH會傳送至節點B,並且透過靴帶電容Cbs抬升節點A的電壓準位,其中ΔV大於0但小於系統高電壓VH並且ΔV可接近系統高電壓VH。並且,跨壓VLC為VH-VL=VH,完成極性反轉的工作。In the period T3, the first reference voltage Vref1 is converted from the system high voltage VH to the system low voltage VL, and the second reference voltage Vref2 is converted from the system low voltage VL to the system high voltage VH. At this time, through the coupling capacitor Ccp, the voltage level of the node A is coupled to the system high voltage VH+ΔV, that is, the voltage level of the node A is coupled to a higher voltage level, so that the system high voltage VH is transmitted to Node B, and raises the voltage level of node A through the bootstrap capacitor Cbs, where ΔV is greater than zero but less than the system high voltage VH and ΔV is close to the system high voltage VH. Further, the voltage VLC is VH-VL=VH, and the polarity inversion operation is completed.

在期間T4中,掃描信號Sscan會致能,而開關電晶體TSW藉由掃描信號Sscan的抬升而導通,以致於為系統低電壓VL的畫素電壓Vdata會傳送至節點A。此時,電晶體T3及第二驅動電晶體TD2呈現截止,因此反相畫素電壓VBdata為系統高電壓VH減去電晶體的臨界電壓Vth,以致於第一驅動電晶體TD1會導通。此時,為系統高電壓VH的第一參考電壓Vref1透過導通的第一驅動電晶體TD1傳送至節點B,以致於液晶電容Clc的跨壓VLC為(VH-2Vth)-VH=-2Vth。In the period T4, the scan signal Sscan is enabled, and the switching transistor TSW is turned on by the rise of the scan signal Sscan, so that the pixel voltage Vdata of the system low voltage VL is transmitted to the node A. At this time, the transistor T3 and the second driving transistor TD2 are turned off, so the inverted pixel voltage VBdata is the system high voltage VH minus the threshold voltage Vth of the transistor, so that the first driving transistor TD1 is turned on. At this time, the first reference voltage Vref1 for the system high voltage VH is transmitted to the node B through the turned-on first driving transistor TD1, so that the voltage VLC of the liquid crystal capacitor Clc is (VH-2Vth)-VH=-2Vth.

在期間T5中,掃描信號Sscan會禁能,但節點A、B與反相畫素電壓VBdata的電壓準位保持與期間T1相同,亦即跨壓VLC仍保持為-2Vth。In the period T5, the scan signal Sscan is disabled, but the voltage levels of the nodes A, B and the inverted pixel voltage VBdata remain the same as the period T1, that is, the voltage VLC remains at -2 Vth.

在期間T6中,第一參考電壓Vref1由系統高電壓VH轉變為系統低電壓VL,第二參考電壓Vref2由系統低電壓VL轉變為系統高電壓VH。此時,節點A的電壓準位仍保持於系統低電壓VL,而系統低電壓VL會透過導通的第一驅動電晶體TD1傳送至節點B,以致於跨壓VLC為VL-VL=0。In the period T6, the first reference voltage Vref1 is converted from the system high voltage VH to the system low voltage VL, and the second reference voltage Vref2 is converted from the system low voltage VL to the system high voltage VH. At this time, the voltage level of the node A remains at the system low voltage VL, and the system low voltage VL is transmitted to the node B through the turned-on first driving transistor TD1, so that the voltage across the VLC is VL-VL=0.

在本實施例中,第一參考電壓Vref1及第二參考電壓Vref2的頻率等於2赫茲,但在其他實施例中,第一參考電壓Vref1及第二參考電壓Vref2的頻率可小等2赫茲,此依據本領域通常知識者而定。In this embodiment, the frequencies of the first reference voltage Vref1 and the second reference voltage Vref2 are equal to 2 Hz, but in other embodiments, the frequencies of the first reference voltage Vref1 and the second reference voltage Vref2 may be equal to 2 Hz, It is determined by those of ordinary skill in the art.

綜上所述,本新型創作實施例的畫素電路,其透過反相電路、第一驅動電晶體、第二驅動電晶體、耦合電容及靴帶電容自動變換液晶電容跨壓的極性,以在低畫面更新率下,避免液晶被極化。並且,本新型創作實施例的畫素電路也具有下列優點:In summary, the pixel circuit of the novel embodiment of the present invention automatically converts the polarity of the liquid crystal capacitor across the voltage through the inverter circuit, the first driving transistor, the second driving transistor, the coupling capacitor, and the bootstrap capacitor. Under low picture update rate, avoid liquid crystal being polarized. Moreover, the pixel circuit of the novel creation embodiment has the following advantages:

1. 本新型創作實施例透過兩個反相的第一參考電壓及第二參考電壓,將第一驅動電晶體、第二驅動電晶體、第一電晶體、第二電晶體及第三電晶體為正偏壓的時間縮短為一半,以延長第一驅動電晶體、第二驅動電晶體、第一電晶體、第二電晶體及第三電晶體的使用壽命。1. The present invention creates a first driving transistor, a second driving transistor, a first transistor, a second transistor, and a third transistor through two inverted first reference voltages and a second reference voltage. The time for positive bias is shortened to half to extend the service life of the first driving transistor, the second driving transistor, the first transistor, the second transistor, and the third transistor.

2. 本新型創作實施例利用耦合電容及靴帶電容於第一參考電壓及第二參考電壓變動時,將第二驅動電晶體的閘極電壓向上拉至更高點,使第二驅動電晶體可以更完全的傳送系統高電壓,減少受到閘極電壓限制的影響。2. The novel embodiment uses the coupling capacitor and the shoe strap capacitor to pull the gate voltage of the second driving transistor up to a higher point when the first reference voltage and the second reference voltage fluctuate, so that the second driving transistor It can transmit the system high voltage more completely and reduce the influence of the gate voltage limit.

3. 本新型創作實施例可利用非晶矽薄膜電晶體取代多晶矽薄膜電晶體,成本開銷大大削減,製程難易度大幅減低,並且可增加製程速度及可靠度。3. The novel creation embodiment can replace the polycrystalline germanium film transistor with an amorphous germanium film transistor, the cost overhead is greatly reduced, the process difficulty is greatly reduced, and the process speed and reliability can be increased.

4. 本新型創作實施例可利用交流的第一參考電壓及第二參考電壓(亦即交流共同電壓(AC Vcom)的結構),縮減輸入電壓的範圍,以有效地減少動態功率的消耗。4. The novel authoring embodiment can reduce the range of the input voltage by using the first reference voltage of the alternating current and the second reference voltage (that is, the structure of the alternating current common voltage (AC Vcom)) to effectively reduce the dynamic power consumption.

5. 本新型創作實施例將畫素電路操控在1赫芝的操作頻率,可確保在待機畫面時可以直接使用此電路來做更新動作,而可以不用透過資料驅動電路(未繪示)再次輸送電壓給畫素電極,進而減少資料驅動電路(未繪示)的操作來節省交流電源的消耗。5. The novel creation embodiment controls the pixel circuit to operate at an operating frequency of 1 Hz, which ensures that the circuit can be directly used for updating operations in the standby screen, and can be re-transferred without using a data driving circuit (not shown). The voltage is applied to the pixel electrodes, thereby reducing the operation of the data driving circuit (not shown) to save AC power consumption.

雖然本新型創作已以實施例揭露如上,然其並非用以限定本新型創作,任何所屬技術領域中具有通常知識者,在不脫離本新型創作的精神和範圍內,當可作些許的更動與潤飾,故本新型創作的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the novel creation, and any person skilled in the art can make some changes without departing from the spirit and scope of the novel creation. Retouching, the scope of protection of this new creation is subject to the definition of the scope of the patent application attached.

100‧‧‧畫素電路
A、B‧‧‧節點
Cbs‧‧‧靴帶電容
Ccp‧‧‧耦合電容
Clc‧‧‧液晶電容
GND‧‧‧接地電壓
INT‧‧‧反相電路
PF1、PF2、T1~T6‧‧‧期間
Sscan‧‧‧掃描信號
T1‧‧‧第一電晶體
T2‧‧‧第二電晶體
T3‧‧‧第三電晶體
TD1‧‧‧第一驅動電晶體
TD2‧‧‧第二驅動電晶體
TSW‧‧‧開關電晶體
VBdata‧‧‧反相畫素電壓
Vdata‧‧‧畫素電壓
VH‧‧‧系統高電壓
VL‧‧‧系統低電壓
Vref1‧‧‧第一參考電壓
Vref2‧‧‧第二參考電壓
Vth‧‧‧臨界電壓
ΔV‧‧‧電壓
100‧‧‧ pixel circuit
A, B‧‧‧ nodes
Cbs‧‧‧ boots with capacitor
Ccp‧‧‧Coupling Capacitor
Clc‧‧ liquid crystal capacitor
GND‧‧‧ Grounding voltage
INT‧‧‧ inverter circuit
PF1, PF2, T1~T6‧‧‧
Sscan‧‧‧ scan signal
T1‧‧‧first transistor
T2‧‧‧second transistor
T3‧‧‧ third transistor
TD1‧‧‧first drive transistor
TD2‧‧‧second drive transistor
TSW‧‧‧Switching transistor
VBdata‧‧‧ inverse pixel voltage
Vdata‧‧‧ pixel voltage
VH‧‧‧ system high voltage
VL‧‧‧ system low voltage
Vref1‧‧‧ first reference voltage
Vref2‧‧‧second reference voltage
Vth‧‧‧ threshold voltage ΔV‧‧‧ voltage

圖1為依據本新型創作一實施例的畫素電路的電路示意圖。 圖2為依據本新型創作一實施例的畫素電路的驅動波形示意圖。1 is a circuit diagram of a pixel circuit in accordance with an embodiment of the present invention. 2 is a schematic diagram of driving waveforms of a pixel circuit in accordance with an embodiment of the present invention.

100‧‧‧畫素電路 100‧‧‧ pixel circuit

A、B‧‧‧節點 A, B‧‧‧ nodes

Cbs‧‧‧靴帶電容 Cbs‧‧‧ boots with capacitor

Ccp‧‧‧耦合電容 Ccp‧‧‧Coupling Capacitor

Clc‧‧‧液晶電容 Clc‧‧ liquid crystal capacitor

GND‧‧‧接地電壓 GND‧‧‧ Grounding voltage

INT‧‧‧反相電路 INT‧‧‧ inverter circuit

Sscan‧‧‧掃描信號 Sscan‧‧‧ scan signal

T1‧‧‧第一電晶體 T1‧‧‧first transistor

T2‧‧‧第二電晶體 T2‧‧‧second transistor

T3‧‧‧第三電晶體 T3‧‧‧ third transistor

TD1‧‧‧第一驅動電晶體 TD1‧‧‧first drive transistor

TD2‧‧‧第二驅動電晶體 TD2‧‧‧second drive transistor

TSW‧‧‧開關電晶體 TSW‧‧‧Switching transistor

VBdata‧‧‧反相畫素電壓 VBdata‧‧‧ inverse pixel voltage

Vdata‧‧‧畫素電壓 Vdata‧‧‧ pixel voltage

Vref1‧‧‧第一參考電壓 Vref1‧‧‧ first reference voltage

Vref2‧‧‧第二參考電壓 Vref2‧‧‧second reference voltage

Claims (8)

一種畫素電路,包括: 一開關電晶體,該開關電晶體的一第一端接收一畫素電壓,該開關電晶體的一控制端接收一掃描信號; 一反相電路,耦接該開關電晶體的一第二端以接收該畫素電壓,並且提供一反相畫素電壓; 一第一驅動電晶體,該第一驅動電晶體的一第一端接收一第一參考電壓,該第一驅動電晶體的一控制端耦接該反相電路以接收該反相畫素電壓; 一第二驅動電晶體,該第二驅動電晶體的一第一端接收一第二參考電壓,該第二驅動電晶體的一控制端接收該畫素電壓,該第二驅動電晶體的一第二端耦接該第一驅動電晶體的一第二端; 一耦合電容,耦接於該第二參考電壓與該第二驅動電晶體的該控制端之間; 一靴帶電容,耦接於該第二驅動電晶體的該控制端與該第二驅動電晶體的該第二端之間;以及 一液晶電容,耦接於該第一驅動電晶體的該第二端與該第一參考電壓之間。A pixel circuit includes: a switching transistor, a first end of the switching transistor receives a pixel voltage, a control terminal of the switching transistor receives a scan signal; and an inverter circuit coupled to the switch a second end of the crystal to receive the pixel voltage and provide an inverted pixel voltage; a first driving transistor, a first end of the first driving transistor receiving a first reference voltage, the first A control terminal of the driving transistor is coupled to the inverter circuit to receive the inverted pixel voltage; a second driving transistor, a first terminal of the second driving transistor receives a second reference voltage, the second A control terminal of the driving transistor receives the pixel voltage, a second end of the second driving transistor is coupled to a second end of the first driving transistor; a coupling capacitor coupled to the second reference voltage Between the control terminal of the second driving transistor; a bootband capacitor coupled between the control terminal of the second driving transistor and the second end of the second driving transistor; and a liquid crystal a capacitor coupled to the first driving transistor The second end is between the first reference voltage and the first reference voltage. 如申請專利範圍第1項所述的畫素電路,其中該反相電路包括: 一第一電晶體,該第一電晶體的一第一端及一控制端接收該第一參考電壓,該第一電晶體的一第二端提供該反相畫素電壓; 一第二電晶體,該第二電晶體的一第一端及一控制端接收該第二參考電壓,該第二電晶體的該第二端耦接該第一電晶體的該第二端;以及 一第三電晶體,該第三電晶體的一第一端耦接該第一電晶體的該第二端,該第三電晶體的一控制端接收該畫素電壓,該第三電晶體的一第二端接收一接地電壓。The pixel circuit of claim 1, wherein the inverter circuit comprises: a first transistor, a first end of the first transistor and a control terminal receiving the first reference voltage, the first a second end of a transistor provides the inverted pixel voltage; a second transistor, a first end of the second transistor and a control terminal receive the second reference voltage, the second transistor The second end is coupled to the second end of the first transistor; and a third transistor, a first end of the third transistor is coupled to the second end of the first transistor, the third A control terminal of the crystal receives the pixel voltage, and a second terminal of the third transistor receives a ground voltage. 如申請專利範圍第2項所述的畫素電路,其中該開關電晶體、該第一驅動電晶體、該第二驅動電晶體、該第一電晶體、該第二電晶體及該第三電晶體分別為一非晶矽(a-Si)薄膜電晶體。The pixel circuit of claim 2, wherein the switching transistor, the first driving transistor, the second driving transistor, the first transistor, the second transistor, and the third device The crystals are each an amorphous germanium (a-Si) thin film transistor. 如申請專利範圍第3項所述的畫素電路,其中該開關電晶體、該第一驅動電晶體、該第二驅動電晶體、該第一電晶體、該第二電晶體及該第三電晶體分別為一N型薄膜電晶體。The pixel circuit of claim 3, wherein the switching transistor, the first driving transistor, the second driving transistor, the first transistor, the second transistor, and the third device The crystals are each an N-type thin film transistor. 如申請專利範圍第1項所述的畫素電路,其中該第一參考電壓及該第二參考電壓分別為一交流電壓。The pixel circuit of claim 1, wherein the first reference voltage and the second reference voltage are each an alternating voltage. 如申請專利範圍第5項所述的畫素電路,其中該第一參考電壓及該第二參考電壓分別為一系統高電壓及一系統低電壓。The pixel circuit of claim 5, wherein the first reference voltage and the second reference voltage are a system high voltage and a system low voltage, respectively. 如申請專利範圍第1項所述的畫素電路,其中該第一參考電壓及該第二參考電壓的頻率小於等於2赫茲(Hz)。The pixel circuit of claim 1, wherein the first reference voltage and the second reference voltage have a frequency less than or equal to 2 Hertz (Hz). 如申請專利範圍第7項所述的畫素電路,其中該開關電晶體的導通頻率為1赫茲(Hz)。The pixel circuit of claim 7, wherein the switching transistor has a turn-on frequency of 1 hertz (Hz).
TW105214117U 2016-09-13 2016-09-13 Pixel circuit TWM540366U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI715025B (en) * 2019-05-03 2021-01-01 凌巨科技股份有限公司 Pixel circuit and driving method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI715025B (en) * 2019-05-03 2021-01-01 凌巨科技股份有限公司 Pixel circuit and driving method

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