TWM522948U - Magnetic carrying device for film coating - Google Patents

Magnetic carrying device for film coating Download PDF

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Publication number
TWM522948U
TWM522948U TW105200097U TW105200097U TWM522948U TW M522948 U TWM522948 U TW M522948U TW 105200097 U TW105200097 U TW 105200097U TW 105200097 U TW105200097 U TW 105200097U TW M522948 U TWM522948 U TW M522948U
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Taiwan
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magnetic
unit
base
reference surface
bearing device
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TW105200097U
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Chinese (zh)
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Chong-Yu Ye
Hui-Jia Su
Cheng-Peng Ye
jia-hong Yan
Wan-Yu Huang
mu-sen Lu
Yi-Yuan Huang
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Linco Technology Co Ltd
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Priority to TW105200097U priority Critical patent/TWM522948U/en
Publication of TWM522948U publication Critical patent/TWM522948U/en

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Description

鍍膜用磁性承載裝置Magnetic carrier for coating

本新型是有關於一種鍍膜用承載裝置,特別是指一種鍍膜用磁性承載裝置。The invention relates to a bearing device for coating, in particular to a magnetic bearing device for coating.

參閱圖1及圖2,美國第6,290,824核准公告號發明專利案公開一種用於一連續型(in-line)磁性薄膜鍍膜系統1的載盤裝置18。該連續型磁性薄膜鍍膜系統1沿一X方向具有多數個製程腔體(process chamber)11,還具有一個傳輸腔體(transport chamber)12、一個載入腔體(inlet chamber)13、一個載出腔體(outlet chamber)14、多數個分隔閥門15、多數個X方向傳輸機構(transport mechanism)16,及多數個Y方向傳輸機構17。Referring to Figures 1 and 2, U.S. Patent No. 6,290,824, the disclosure of which is incorporated herein by reference. The continuous magnetic thin film coating system 1 has a plurality of process chambers 11 in an X direction, and has a transport chamber 12, an inlet chamber 13, and a carry-out chamber. An outlet chamber 14, a plurality of divider valves 15, a plurality of X-direction transport mechanisms 16, and a plurality of Y-direction transport mechanisms 17.

如圖1所示,該傳輸腔體12是沿該X方向延伸;該載入腔體13與該載出腔體14是分別透過該等分隔閥門15中的其中兩個分隔閥門15以連接於該傳輸腔體12之相反兩端部121,且該等製程腔體11是透過剩餘的分隔閥門15以連接該傳輸腔體12。該等X方向傳輸機構16是分別設置於該載入腔體13、該傳輸腔體12與該載出腔體14中,以承載該載盤裝置18沿該X方向移動,該等Y方向傳輸機構17是設置於該傳輸腔體12,以承載該載盤裝置18在一Y方向上於該傳輸腔體12與各製程腔體11間往復移動。As shown in FIG. 1, the transfer cavity 12 extends in the X direction; the loading cavity 13 and the loading cavity 14 are respectively connected through two of the partition valves 15 to connect the valve 15 to The opposite ends 121 of the transfer chamber 12, and the process chambers 11 are passed through the remaining partition valve 15 to connect the transfer chamber 12. The X-direction transmission mechanisms 16 are respectively disposed in the loading cavity 13, the transmission cavity 12 and the loading cavity 14 to carry the carrier device 18 to move in the X direction, and the Y-direction transmission The mechanism 17 is disposed in the transmission cavity 12 to carry the carrier device 18 to reciprocate between the transfer cavity 12 and the process chambers 11 in a Y direction.

再參閱圖2,當該載盤裝置18位處於各製程腔體11中時,是透過各製程腔體11內的一個托盤承載機構111以沿一Z方向上下移動該載盤裝置18,並位在各製程腔體11內的一個靶材112之上。參閱圖3與圖4,該載盤裝置18具有一個托盤(pallet)181,及兩個彼此間隔設置於該托盤181上的永久磁條(permanent bar magnet)182。該托盤181之一中心處設有一個階級式穿孔180,且一個用來執行一鍍膜製程的基材19是設置於該托盤18的該階級式穿孔180中,以位於該等永久磁條182間。該載盤裝置18是透過該等永久磁條182以對該基材19提供一平行於該基材19之平面方向的磁場B。Referring to FIG. 2, when the carrier device 18 is in each process chamber 11, the tray device 18 is moved up and down in a Z direction through a tray carrying mechanism 111 in each processing chamber 11. Above a target 112 in each process chamber 11. Referring to Figures 3 and 4, the carrier device 18 has a pallet 181 and two permanent bar magnets 182 spaced from one another on the tray 181. A tray-shaped perforation 180 is provided at a center of the tray 181, and a substrate 19 for performing a coating process is disposed in the stepped perforation 180 of the tray 18 to be located between the permanent magnetic strips 182. . The carrier device 18 is permeable to the permanent magnetic strips 182 to provide the substrate 19 with a magnetic field B parallel to the planar direction of the substrate 19.

該基材19於執行該鍍膜製程時,自該靶材112所濺射而出的濺射粒子(sputtering particles)是互相碰撞並沉積於該基材19之面向該靶材112的一表面上;同時,該等永久磁條182所產生的該磁場B能令濺射粒子沿該磁場B的方向排列,使經排列的濺射粒子沉積於該基材19表面後以形成一磁性取向薄膜(magnetically oriented film,圖未示)。此外,當設置有該基材19的載盤裝置18經其中一Y方向傳輸機構17移出其製程腔體11時,沉積於該基材19表面上的磁性取向薄膜在完全冷卻之前,仍可透過該等永久磁條182所提供的該磁場B,以令該磁性取向薄膜的取向不是呈非序化的(disordered)。When the substrate 19 is subjected to the coating process, sputtering particles sputtered from the target 112 collide with each other and deposit on a surface of the substrate 19 facing the target 112; At the same time, the magnetic field B generated by the permanent magnetic strips 182 can align the sputtered particles in the direction of the magnetic field B, so that the arranged sputtered particles are deposited on the surface of the substrate 19 to form a magnetically oriented film. Oriented film, not shown). Further, when the tray device 18 provided with the substrate 19 is removed from the process chamber 11 via one of the Y-direction transport mechanisms 17, the magnetic alignment film deposited on the surface of the substrate 19 is still permeable before being completely cooled. The magnetic field B provided by the permanent magnetic strips 182 is such that the orientation of the magnetic alignment film is not disordered.

雖然該載盤裝置18對該基材19所提供的該磁場B,可令該磁性取向薄膜在未完全冷卻前的取向仍處於序化的。然而,該磁場B的分布對於該磁性取向薄膜之序化取向的貢獻度仍然有限。Although the magnetic field B provided by the chucking device 18 to the substrate 19 allows the orientation of the magnetically oriented film to remain prior to incomplete cooling. However, the contribution of the distribution of the magnetic field B to the order orientation of the magnetic alignment film is still limited.

經上述說明可知,改良鍍膜用磁性承載裝置的細部結構進而改善磁場分布,是此技術領域的相關技術人員所待突破的難題。As can be seen from the above description, improving the detailed structure of the magnetic bearing device for coating and further improving the magnetic field distribution is a problem to be solved by those skilled in the art.

因此,本新型之目的,即在提供一種鍍膜用磁性承載裝置。Therefore, the object of the present invention is to provide a magnetic bearing device for coating.

於是,本新型鍍膜用磁性承載裝置,是用來承載至少一待鍍物,其包含一個基座、一個導磁單元,及一個磁性單元。該基座具有一個參考面。該導磁單元設置於該基座的該參考面,並具有複數個沿一第一方向彼此間隔的凸柱。該磁性單元設置於該參考面。在本新型中,該導磁單元之各凸柱之一頂面的一高度是大於該磁性單元的一頂面的一高度。Therefore, the novel magnetic bearing device for coating is used for carrying at least one object to be plated, which comprises a base, a magnetic conductive unit, and a magnetic unit. The base has a reference surface. The magnetic conductive unit is disposed on the reference surface of the base and has a plurality of protrusions spaced apart from each other along a first direction. The magnetic unit is disposed on the reference surface. In the present invention, a height of a top surface of each of the studs of the magnetic conductive unit is greater than a height of a top surface of the magnetic unit.

本新型之功效在於:於該鍍膜用磁性承載裝置內引入該導磁單元,使該導磁單元與該磁性單元間距有一高度差,令該導磁單元之各凸柱頂面的高度大於該磁性單元的頂面高度,以藉此消除該磁性單元所產生之磁場總量中之垂直分量的磁場,並有效地貢獻出水平分量的磁場。The function of the present invention is to introduce the magnetic conductive unit into the magnetic bearing device for coating, such that the magnetic conductive unit and the magnetic unit have a height difference, so that the height of the top surface of each of the protruding portions of the magnetic conductive unit is greater than the magnetic The top surface height of the cell, thereby eliminating the magnetic field of the vertical component of the total amount of magnetic field generated by the magnetic unit, and effectively contributing the magnetic field of the horizontal component.

如圖5與圖6所示,本新型鍍膜用磁性承載裝置的一第一實施例,是用來承載多數個位於一連續型濺鍍系統(in-line sputtering system,圖未示)中的待鍍物5。本新型鍍膜用磁性承載裝置之該第一實施例,包含一個基座2、一個導磁單元3,及一個磁性單元4。As shown in FIG. 5 and FIG. 6, a first embodiment of the magnetic bearing device for coating of the present invention is used to carry a plurality of in-line sputtering systems (not shown). Plating 5. The first embodiment of the novel magnetic bearing device for coating includes a base 2, a magnetic guiding unit 3, and a magnetic unit 4.

該基座2具有一個參考面21。在本新型該第一實施例中,該基座2的該參考面21是如圖6所示,由該基座2之一頂面22所定義而成。The base 2 has a reference surface 21. In the first embodiment of the present invention, the reference surface 21 of the susceptor 2 is defined by a top surface 22 of the susceptor 2 as shown in FIG.

該導磁單元3設置於該基座2的該參考面21,並具有複數個沿一第一方向x彼此間隔的凸柱31,及一個位於該等凸柱31下的基部32。該導磁單元3的各凸柱31是於該參考面21上呈一肋狀沿一實質垂直於該第一方向x的第二方向y延伸。該導磁單元3的該基部32於該等凸柱31之最內側相鄰凸柱31間具有一個供放置該等待鍍物5的設置區321。The magnetic conductive unit 3 is disposed on the reference surface 21 of the base 2, and has a plurality of protrusions 31 spaced apart from each other along a first direction x, and a base 32 located under the protrusions 31. Each of the studs 31 of the magnetic conductive unit 3 extends in a rib shape on the reference surface 21 along a second direction y substantially perpendicular to the first direction x. The base portion 32 of the magnetic conductive unit 3 has a setting area 321 for placing the waiting plate 5 between the innermost adjacent studs 31 of the studs 31.

該磁性單元4設置於該參考面21;其中,如圖6所示,該導磁單元3之各凸柱31之一頂面311的一高度,是大於該磁性單元4的一頂面41的一高度。The magnetic unit 4 is disposed on the reference surface 21; wherein, as shown in FIG. 6, a height of a top surface 311 of each of the protrusions 31 of the magnetic conductive unit 3 is greater than a top surface 41 of the magnetic unit 4. a height.

在本新型該第一實施例中,該磁性單元4具有一對永久磁肋條42,該導磁單元3還具有一個圍壁33。此外,更具體地來說,該導磁單元3與該磁性單元4是設置於該參考面21上。如圖5及圖6所示,該對永久磁肋條42是沿該第二方向y延伸以分別位於該等凸柱31之最外側之該兩凸柱31外,該導磁單元3的該圍壁33圍繞該對永久磁肋條42與該導磁單元3之該等凸柱31及該基部32。較佳地,該導磁單元3之該等凸柱31、該基部32與該圍壁33是由導磁率(permeability;μ)大於500的導磁材料所構成;該導磁單元3之該圍壁33的一頂面是高於該等凸柱31的頂面311。在本新型該第一實施例中,該導磁單元3雖是以具有該圍壁33為例做說明,但本新型不限於此。In the first embodiment of the present invention, the magnetic unit 4 has a pair of permanent magnetic ribs 42, which also have a surrounding wall 33. Further, more specifically, the magnetic conductive unit 3 and the magnetic unit 4 are disposed on the reference surface 21. As shown in FIG. 5 and FIG. 6 , the pair of permanent magnetic ribs 42 extend in the second direction y to be outside the two protrusions 31 respectively located at the outermost sides of the protrusions 31 , and the circumference of the magnetic conductive unit 3 A wall 33 surrounds the pair of permanent magnetic ribs 42 and the studs 31 and the base 32 of the magnetically permeable unit 3. Preferably, the protrusions 31, the base 32 and the surrounding wall 33 of the magnetic conductive unit 3 are made of a magnetic conductive material having a permeability (μ) of more than 500; the circumference of the magnetic conductive unit 3 A top surface of the wall 33 is higher than the top surface 311 of the studs 31. In the first embodiment of the present invention, the magnetic conductive unit 3 is described by taking the surrounding wall 33 as an example, but the present invention is not limited thereto.

參閱圖7及圖8,顯示有本新型該第一實施例之經該導磁單元3與該磁性單元4的作用下所產生的磁力線分布圖。由圖7所顯示之紅色磁力線分布可知,本新型該第一實施例之該導磁單元3在未具有該圍壁33的條件下,紅色磁力線雖然可在平行於該參考面21的方向上提供水平分量的磁場,但紅色磁力線較難以被封閉在該導磁單元3之該等凸柱31、該基部32與該等待鍍物5的周圍。由圖8所顯示之紅色磁力線分布明顯可知,本新型該第一實施例之該導磁單元3在具有該圍壁33的條件下,可藉由該導磁單元3的圍壁33以令紅色磁力線盡量封閉於圍壁33內,避免該等待鍍物5周圍的磁場與該連續型濺鍍系統之一鍍膜腔體內的一陰極(圖未示)的磁場產生交互作用,以藉此減少該等待鍍物5在透過該連續型濺鍍系統執行一鍍膜程序時其待鍍物5周圍的磁力損耗。Referring to FIG. 7 and FIG. 8, there is shown a magnetic line distribution diagram of the first embodiment of the present invention which is generated by the magnetic conductive unit 3 and the magnetic unit 4. It can be seen from the distribution of the red magnetic lines of force shown in FIG. 7 that the magnetic magnetic field 3 of the first embodiment of the present invention can provide the magnetic magnetic lines in a direction parallel to the reference surface 21 without the surrounding wall 33. The magnetic field of the horizontal component, but the red magnetic lines of force are more difficult to be enclosed around the studs 31 of the magnetically permeable unit 3, the base 32 and the periphery of the waiting plate 5. It can be seen from the distribution of the red magnetic lines of force shown in FIG. 8 that the magnetic conductive unit 3 of the first embodiment of the present invention can be made red by the surrounding wall 33 of the magnetic conductive unit 3 under the condition of having the surrounding wall 33. The magnetic lines of force are enclosed in the surrounding wall 33 as much as possible to prevent the magnetic field around the waiting plate 5 from interacting with the magnetic field of a cathode (not shown) in the coating chamber of the continuous sputtering system, thereby reducing the waiting The plating material 5 has a magnetic loss around the object to be plated 5 when a coating process is performed through the continuous sputtering system.

本新型該第一實施例自圖7與圖8計算取得的磁通密度(G)對距離(mm)曲線圖是顯示於圖9。由圖9顯示可知,當本新型該第一實施例之該導磁單元3未具有該圍壁33時,該第一實施例在該設置區321處之垂直於該參考面21的磁通密度範圍(見深紅色曲線)是介於-5 G ~ 12 G間,且該第一實施例在該設置區321處之平行於該參考面21的磁通密度範圍(見淺藍色曲線)是介於12 G ~ 15 G間。顯示出本新型之鍍膜用磁性承載裝置在引入該導磁單元3後並令各凸柱31頂面311的高度大於該磁性單元4頂面41的高度,能使水平方向的磁場分量大於垂直方向的磁場分量。再參閱圖9,當本新型該第一實施例之該導磁單元3具有該圍壁33時,該第一實施例在該設置區321處之垂直於該參考面21的磁通密度範圍(見深藍色曲線)已從-5 G ~ 12 G下降至-3 G ~ 10 G間,且該第一實施例在該設置區321處之平行於該參考面21的磁通密度範圍(見深綠色曲線)則是從12 G ~ 15 G間上升至31 G ~ 33 G。證實本新型該第一實施例令該導磁單元3之各凸柱31頂面311的高度大於磁性單元4之頂面41的高度並配合該圍壁33,可降低垂直於參考面21的磁通密度並有效地貢獻出平行於該參考面21的磁通密度,以避免自該靶材(圖未示)所濺射出來的帶電粒子受垂直分量的磁場所影響而產生迴旋。The magnetic flux density (G) versus distance (mm) curve obtained from the first embodiment of the present invention from Fig. 7 and Fig. 8 is shown in Fig. 9. It can be seen from FIG. 9 that when the magnetic conductive unit 3 of the first embodiment of the present invention does not have the surrounding wall 33, the magnetic flux density of the first embodiment perpendicular to the reference surface 21 at the setting area 321 The range (see dark red curve) is between -5 G and 12 G, and the range of magnetic flux density (see light blue curve) parallel to the reference surface 21 of the first embodiment at the setting area 321 is Between 12 G ~ 15 G. It is shown that the magnetic bearing device for coating of the present invention has the height of the top surface 311 of each of the protrusions 31 being greater than the height of the top surface 41 of the magnetic unit 4 after the introduction of the magnetic conductive unit 3, so that the horizontal magnetic field component is greater than the vertical direction. Magnetic field component. Referring to FIG. 9, when the magnetic conductive unit 3 of the first embodiment of the present invention has the surrounding wall 33, the magnetic flux density range of the first embodiment perpendicular to the reference surface 21 at the setting area 321 ( See dark blue curve) has decreased from -5 G ~ 12 G to -3 G ~ 10 G, and the magnetic flux density range of the first embodiment parallel to the reference surface 21 at the setting area 321 (see depth) The green curve is increased from 12 G to 15 G to 31 G to 33 G. It is confirmed that the first embodiment of the present invention makes the height of the top surface 311 of each of the pillars 31 of the magnetic conductive unit 3 larger than the height of the top surface 41 of the magnetic unit 4 and fits the surrounding wall 33, thereby reducing the magnetic perpendicular to the reference surface 21. The density of the flux and the contribution of the magnetic flux density parallel to the reference surface 21 are effectively prevented to prevent the charged particles sputtered from the target (not shown) from being affected by the magnetic field of the vertical component to generate a convolution.

參閱圖10,本新型鍍膜用磁性承載裝置之一第二實施例大致上是相同於該第一實施例,其不同處是在於,該基座2、該導磁單元3與該磁性單元4的細部結構。此外,該基座2的參考面21亦有別於該第一實施例,且該導磁單元3未具有如圖6所示之該圍壁33。Referring to FIG. 10, a second embodiment of the magnetic bearing device for coating of the present invention is substantially the same as the first embodiment, and is different in that the base 2, the magnetic conductive unit 3 and the magnetic unit 4 are Detailed structure. Further, the reference surface 21 of the susceptor 2 is also different from the first embodiment, and the magnetic permeable unit 3 does not have the surrounding wall 33 as shown in FIG.

具體地來說,該基座2具有一封閉容室20及該位於該封閉容室20外的頂面22。在本新型該第二實施例中,該基座2之該參考面21是低於該基座2之該頂面22,該導磁單元3與該磁性單元4是以該參考面21做為一界面;該導磁單元3與該磁性單元4是設置於該基座2的該封閉容室20內,該導磁性單元3是位於該參考面21上,且該磁性單元4是位於該參考面21下;該基座2的該頂面22具有一個供放置該等待鍍物5的設置區221。Specifically, the base 2 has a closed chamber 20 and a top surface 22 located outside the closed chamber 20. In the second embodiment of the present invention, the reference surface 21 of the susceptor 2 is lower than the top surface 22 of the susceptor 2, and the magnetic conductive unit 3 and the magnetic unit 4 are based on the reference surface 21 An interface; the magnetic unit 3 and the magnetic unit 4 are disposed in the closed chamber 20 of the base 2, the magnetic conductive unit 3 is located on the reference surface 21, and the magnetic unit 4 is located at the reference The top surface 22 of the susceptor 2 has a setting area 221 for placing the waiting plating material 5.

在本新型該第二實施例中,該磁性單元4之永久磁肋條42的數量是多數個,且該等永久磁肋條42是如圖5所示般沿該第二方向y延伸以分別對應設置於該導磁單元3之該等凸柱31下。In the second embodiment of the present invention, the number of permanent magnetic ribs 42 of the magnetic unit 4 is a plurality, and the permanent magnetic ribs 42 extend along the second direction y as shown in FIG. Under the studs 31 of the magnetic conductive unit 3.

較佳地,該導磁單元3之相鄰凸柱31間具有一第一間隙S 1,S 1介於0.5 cm至5 cm間;該磁性單元4之相鄰永久磁肋條42間具有一第二間隙S 2,S 2介於0.5 cm至5 cm間;該導磁單元3之各凸柱31沿該第一方向x具有一第一寬度W 1,W 1介於0.2 cm至1 cm間;該磁性單元4之各永久磁肋條42沿該第一方向x具有一第二寬度W 2,W 2介於 0.5cm至 2 cm間。 Preferably, the adjacent pillars 31 of the magnetic conductive unit 3 have a first gap S 1 , S 1 is between 0.5 cm and 5 cm; and the adjacent permanent magnetic ribs 42 of the magnetic unit 4 have a first The two gaps S 2 , S 2 are between 0.5 cm and 5 cm; each of the protrusions 31 of the magnetic conductive unit 3 has a first width W 1 along the first direction x, and W 1 is between 0.2 cm and 1 cm. Each of the permanent magnetic ribs 42 of the magnetic unit 4 has a second width W 2 along the first direction x, and W 2 is between 0.5 cm and 2 cm.

此處需說明的是,本新型該第二實施例是藉由各凸柱31與各永久磁肋條42之第一間隙S 1與第二間隙S 2及各凸柱31與各永久磁肋條42之第一寬度W 1與第二寬度W 2,來調整該導磁單元3與該磁性單元4兩者間的作用所產生的磁場。再參閱圖10,當第一寬度W 1與第二寬度W 2過小時,會造成該第二實施例之左右兩側處與中心處間之平行與垂直方向磁場的不均勻,以致於左右兩側處與中心處間的磁場分布會有較大幅度的差異。 It should be noted that the second embodiment of the present invention is the first gap S 1 and the second gap S 2 , and the protrusions 31 and the permanent magnetic ribs 42 of each of the permanent pillars 31 and the permanent magnetic ribs 42 . The first width W 1 and the second width W 2 adjust the magnetic field generated by the interaction between the magnetic conductive unit 3 and the magnetic unit 4. Referring to FIG. 10, when the first width W 1 and the second width W 2 are too small, the parallel and vertical magnetic fields between the left and right sides of the second embodiment are uneven, so that the left and right sides are There is a large difference in the distribution of the magnetic field between the side and the center.

圖11顯示有本新型該第二實施例之該導磁單元3與該磁性單元4作用下所產生的磁力線分布圖。本新型該第二實施例自圖11計算取得的磁通密度(G)對距離(mm)曲線圖是顯示於圖12。由圖12顯示可知,自該第二實施例於該第二方向y上的中心處及邊緣處所取得之垂直於該參考面21的磁通密度範圍(見深紅色與淺藍色曲線)皆趨近-2 G ~ 2 G間,反觀自該第二實施例之相同兩處(見深藍色與深綠色曲線)所取得之平行於該參考面21的磁通密度範圍則是皆趨近於32 G ~33 G間。由圖12所顯示的分析結果可證實,本新型該第二實施例令該磁性單元4之各永久磁肋條42設置於該導磁單元3之各凸柱31下(也就是設置在該參考面21下),使各凸柱31頂面311的高度大於磁性單元4之頂面41的高度,可消除垂直於該參考面21的磁通密度並有效地貢獻出平行於該參考面21的磁通密度,避免帶電粒子(圖未示)受到垂直分量的磁場所影響而產生迴旋。除此之外,本新型該第二實施例基於該導磁單元3與該磁性單元4是設置於該基座2的封閉容室20中,並於該基座2之頂面22具有該設置區221以供該等待鍍物5放置。相較於該第一實施例,本新型該第二實施例提供更大面積的設置區221;因此,可以增加放置於該設置區221之待鍍物5的數量,或減少待鍍物5的數量改放置大面積的待鍍物5。 FIG. 11 is a view showing the distribution of magnetic lines of force generated by the magnetic conductive unit 3 and the magnetic unit 4 of the second embodiment of the present invention. The magnetic flux density (G) versus distance (mm) plot obtained from the second embodiment of the present invention from FIG. 11 is shown in FIG. As can be seen from FIG. 12, the magnetic flux density range (see deep red and light blue curves) perpendicular to the reference surface 21 taken from the center and the edge in the second direction y of the second embodiment tends to be Between -2 G ~ 2 G, the range of magnetic flux density parallel to the reference surface 21 obtained from the same two places (see dark blue and dark green curves) of the second embodiment is close to 32 G ~ 33 G. It can be confirmed from the analysis result shown in FIG. 12 that the second embodiment of the present invention has the permanent magnetic ribs 42 of the magnetic unit 4 disposed under the respective pillars 31 of the magnetic conductive unit 3 (that is, disposed on the reference surface). 21), the height of the top surface 311 of each of the studs 31 is greater than the height of the top surface 41 of the magnetic unit 4, the magnetic flux density perpendicular to the reference surface 21 can be eliminated and the magnetic parallel to the reference surface 21 can be effectively contributed. The pass density prevents the charged particles (not shown) from being affected by the magnetic field of the vertical component to produce a convolution. In addition, the second embodiment of the present invention is based on the magnetic conductive unit 3 and the magnetic unit 4 being disposed in the closed chamber 20 of the base 2, and having the setting on the top surface 22 of the base 2 Zone 221 is provided for the waiting plate 5 to be placed. Compared with the first embodiment, the second embodiment of the present invention provides a larger area of the setting area 221; therefore, the number of objects to be plated 5 placed in the setting area 221 can be increased, or the object to be plated 5 can be reduced. The quantity is changed to place a large area of the object to be plated 5 .

經由上述該等實施例的詳細說明可知,在本新型該等實施例之鍍膜用磁性承載裝置的結構改良中,利用該導磁單元3與該磁性單元4的高度差能有效地貢獻出水平分量的磁場,使得自該靶材所濺射出來的帶電粒子不受垂直分量的磁場所影響,並於沉積至各待鍍物5之一表面的同時受水平分量的磁場所影響以形成一磁性取向薄膜。 As is apparent from the detailed description of the above embodiments, in the structural improvement of the magnetic carrier device for coating film of the embodiments of the present invention, the difference in height between the magnetic conductive unit 3 and the magnetic unit 4 can effectively contribute the horizontal component. The magnetic field causes the charged particles sputtered from the target to be unaffected by the magnetic field of the vertical component, and is deposited on the surface of each of the objects to be plated 5 while being affected by the magnetic field of the horizontal component to form a magnetic orientation. film.

綜上所述,本新型鍍膜用磁性承載裝置透過該導磁單元3與該磁性單元4的高度差,以令該導磁單元3之各凸柱31頂面311的高度大於該磁性單元4的頂面41,能消除垂直分量的磁場以有效地貢獻出水平分量的磁場。因此,確實可達到本新型之目的。 In summary, the magnetic bearing device of the present invention transmits the height difference between the magnetic conductive unit 3 and the magnetic unit 4 such that the height of the top surface 311 of each of the protruding pillars 31 of the magnetic conductive unit 3 is greater than that of the magnetic unit 4. The top surface 41 can eliminate the magnetic field of the vertical component to effectively contribute the magnetic field of the horizontal component. Therefore, the purpose of the present invention can be achieved.

惟以上所述者,僅為本新型之較佳實施例而已,當不能以此限定本新型實施之範圍,凡是依本新型申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾,皆仍屬本新型專利涵蓋之範圍內。However, the above is only a preferred embodiment of the present invention, and when it is not possible to limit the scope of the present invention, any simple equivalent changes and modifications made in accordance with the scope of the present patent application and the contents of the patent specification are It is still within the scope of this new patent.

2‧‧‧基座 2‧‧‧Base

20‧‧‧封閉容室 20‧‧‧Closed room

21‧‧‧參考面 21‧‧‧ reference plane

22‧‧‧頂面 22‧‧‧ top surface

221‧‧‧設置區 221‧‧‧Setting area

3‧‧‧導磁單元 3‧‧‧Magnetic unit

31‧‧‧凸柱 31‧‧‧Bump

311‧‧‧頂面 311‧‧‧ top surface

32‧‧‧基部 32‧‧‧ base

321‧‧‧設置區 321‧‧‧Setting area

33‧‧‧圍壁 33‧‧‧

4‧‧‧磁性單元 4‧‧‧Magnetic unit

41‧‧‧頂面 41‧‧‧ top surface

42‧‧‧永久磁肋條 42‧‧‧Permanent magnetic ribs

5‧‧‧待鍍物 5‧‧‧The object to be plated

x‧‧‧第一方向 x‧‧‧First direction

y‧‧‧第二方向 Y‧‧‧second direction

S1‧‧‧第一間隙 S 1 ‧‧‧First gap

S2‧‧‧第二間隙 S 2 ‧‧‧Second gap

W1‧‧‧第一寬度 W 1 ‧‧‧first width

W2‧‧‧第二寬度 W 2 ‧‧‧second width

本新型之其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中: 圖1是一俯視示意圖,說明美國第6,290,824核准公告號發明專利案所公開的一種連續型磁性薄膜鍍膜系統; 圖2是一截面圖,說明該連續型磁性薄膜鍍膜系統之一製程腔體內所設置的一載盤裝置; 圖3是一俯角立體圖,說明該載盤裝置及一設置於該載盤裝置上的一基材; 圖4是沿圖3之直線IV-IV所取得的一截面圖,說明該載盤裝置的一細部結構; 圖5是一俯視圖,說明本新型鍍膜用磁性承載裝置的一第一實施例; 圖6是沿圖5的直線VI-VI所取得的一剖面圖,說明本新型該第一實施例的細部結構; 圖7是一磁力線分布圖,說明本新型該第一實施例經一未具有一圍壁的一導磁單元及一磁性單元的作用下所產生的磁力線分布; 圖8是一磁力線分布圖,說明本新型該第一實施例經具有該圍壁之導磁單元及該磁性單元的作用下所產生的磁力線分布; 圖9是自圖7與圖8所計算取得的一磁通密度(magnetic flux density;G)對距離(mm)曲線圖,說明本新型該第一實施例之一設置區之平行於一參考面與垂直於該參考面的磁通密度分布; 圖10是一不完整的剖面圖,說明本新型鍍膜用磁性承載裝置的一第二實施例; 圖11是一磁力線分布圖,說明本新型該第二實施例經一導磁單元及一磁性單元的作用下所產生的磁力線分布;及 圖12是自圖11所計算取得的一磁通密度(G)對距離(mm)曲線圖,說明本新型該第二實施例之平行於一參考面與垂直於該參考面的磁通密度分布。Other features and effects of the present invention will be apparent from the following description of the drawings, wherein: Figure 1 is a top view of a continuous magnetic thin film coating disclosed in U.S. Patent No. 6,290,824. Figure 2 is a cross-sectional view showing a carrier device disposed in a process chamber of the continuous magnetic thin film coating system; Figure 3 is a perspective view showing the carrier device and a device disposed on the carrier device Figure 4 is a cross-sectional view taken along line IV-IV of Figure 3, illustrating a detailed structure of the carrier device; Figure 5 is a plan view showing a magnetic carrier device for the novel coating film FIG. 6 is a cross-sectional view taken along line VI-VI of FIG. 5, illustrating a detailed structure of the first embodiment of the present invention; FIG. 7 is a magnetic line distribution diagram illustrating the first embodiment of the present invention. a magnetic field line distribution generated by a magnetic conductive unit and a magnetic unit without a surrounding wall; FIG. 8 is a magnetic line distribution diagram illustrating the first embodiment of the present invention having the surrounding wall The magnetic flux distribution generated by the magnetic conductive unit and the magnetic unit; FIG. 9 is a magnetic flux density (G) versus distance (mm) curve calculated from FIG. 7 and FIG. A magnetic flux density distribution parallel to a reference plane and perpendicular to the reference plane in a setting region of the first embodiment; FIG. 10 is an incomplete cross-sectional view illustrating a second magnetic carrier device for the novel coating film Embodiment 11 is a magnetic line distribution diagram illustrating the distribution of magnetic lines of force generated by a magnetic conductive unit and a magnetic unit of the second embodiment of the present invention; and FIG. 12 is a magnetic field calculated from FIG. The density (G) versus distance (mm) plot illustrates the magnetic flux density distribution parallel to a reference plane and perpendicular to the reference plane of the second embodiment of the present invention.

2‧‧‧基座 2‧‧‧Base

21‧‧‧參考面 21‧‧‧ reference plane

22‧‧‧頂面 22‧‧‧ top surface

3‧‧‧導磁單元 3‧‧‧Magnetic unit

31‧‧‧凸柱 31‧‧‧Bump

311‧‧‧頂面 311‧‧‧ top surface

32‧‧‧基部 32‧‧‧ base

321‧‧‧設置區 321‧‧‧Setting area

33‧‧‧圍壁 33‧‧‧

4‧‧‧磁性單元 4‧‧‧Magnetic unit

41‧‧‧頂面 41‧‧‧ top surface

42‧‧‧永久磁肋條 42‧‧‧Permanent magnetic ribs

5‧‧‧待鍍物 5‧‧‧The object to be plated

x‧‧‧第一方向 x‧‧‧First direction

Claims (10)

一種鍍膜用磁性承載裝置,是用來承載至少一待鍍物,其包含: 一個基座,具有一個參考面; 一個導磁單元,設置於該基座的該參考面並具有複數個沿一第一方向彼此間隔的凸柱;及 一個磁性單元,設置於該參考面; 其中,該導磁單元之各凸柱之一頂面的一高度是大於該磁性單元的一頂面的一高度。A magnetic bearing device for coating is used for carrying at least one object to be plated, comprising: a base having a reference surface; a magnetic guiding unit disposed on the reference surface of the base and having a plurality of a pillar spaced apart from each other; and a magnetic unit disposed on the reference surface; wherein a height of a top surface of each of the pillars of the magnetic conductive unit is greater than a height of a top surface of the magnetic unit. 如請求項第1項所述的鍍膜用磁性承載裝置,其中,該導磁單元還具有一個位於該等凸柱下的基部。The magnetic carrier device for coating according to claim 1, wherein the magnetic conductive unit further has a base under the protrusions. 如請求項第2項所述的鍍膜用磁性承載裝置,其中,各凸柱是於該參考面上呈一肋狀沿一實質垂直於該第一方向的第二方向延伸。The magnetic bearing device for coating according to claim 2, wherein each of the protrusions has a rib shape on the reference surface extending in a second direction substantially perpendicular to the first direction. 如請求項第3項所述的鍍膜用磁性承載裝置,其中,該參考面是由該基座之一頂面所定義而成,且該導磁單元與該磁性單元是設置於該參考面上。The magnetic bearing device for coating according to claim 3, wherein the reference surface is defined by a top surface of the base, and the magnetic conductive unit and the magnetic unit are disposed on the reference surface . 如請求項第4項所述的鍍膜用磁性承載裝置,其中,該磁性單元具有一對永久磁肋條,該對永久磁肋條是沿該第二方向延伸以分別位於該等凸柱之最外側之該兩凸柱外,該導磁單元的該基部於該等凸柱之最內側相鄰凸柱間具有一個供放置該待鍍物的設置區。The magnetic bearing device for coating according to claim 4, wherein the magnetic unit has a pair of permanent magnetic ribs extending in the second direction to be respectively located at the outermost sides of the protrusions Outside the two protrusions, the base of the magnetic conductive unit has a setting area for placing the object to be plated between the adjacent pillars of the innermost side of the protrusions. 如請求項第5項所述的鍍膜用磁性承載裝置,其中,該導磁單元還具有一個圍壁,該圍壁圍繞該對永久磁肋條與該導磁單元之該等凸柱及該基部。The magnetic bearing device for coating according to claim 5, wherein the magnetic conductive unit further has a surrounding wall surrounding the pair of permanent magnetic ribs and the protruding posts of the magnetic conductive unit and the base. 如請求項第3項所述的鍍膜用磁性承載裝置,其中,該基座具有一封閉容室及一位於該封閉容室外的頂面,該基座之該參考面是低於該基座之該頂面,該導磁單元與該磁性單元是以該參考面做為一界面,該導磁單元與該磁性單元是設置於該基座的該封閉容室內,該導磁性單元是位於該參考面上,且該磁性單元是位於該參考面下,該基座的該頂面具有一個供放置該待鍍物的設置區。The magnetic bearing device for coating according to claim 3, wherein the base has a closed chamber and a top surface located outside the closed chamber, the reference surface of the base being lower than the base The top surface, the magnetic unit and the magnetic unit are an interface with the reference surface, the magnetic unit and the magnetic unit are disposed in the closed chamber of the base, and the magnetic conductive unit is located at the reference And the magnetic unit is located under the reference surface, and the top surface of the base has a setting area for placing the object to be plated. 如請求項第7項所述的鍍膜用磁性承載裝置,其中,該磁性單元具有多數個永久磁肋條,該等永久磁肋條是沿該第二方向延伸以分別對應設置於該導磁單元之該等凸柱下。The magnetic bearing device for coating according to claim 7, wherein the magnetic unit has a plurality of permanent magnetic ribs extending in the second direction to respectively correspond to the magnetically permeable unit. Under the convex column. 如請求項第8項所述的鍍膜用磁性承載裝置,其中,該導磁單元之相鄰凸柱間具有一第一間隙S 1,S 1介於0.5 cm至5 cm間;該磁性單元之相鄰永久磁肋條間具有一第二間隙S 2,S 2介於0.5 cm至5 cm間。 The magnetic bearing device for coating according to claim 8, wherein the adjacent pillars of the magnetic conductive unit have a first gap S 1 , and S 1 is between 0.5 cm and 5 cm; There is a second gap S 2 between adjacent permanent magnetic ribs, and S 2 is between 0.5 cm and 5 cm. 如請求項第8項所述的鍍膜用磁性承載裝置,其中,該導磁單元之各凸柱沿該第一方向具有一第一寬度W 1,W 1介於0.2 cm至1 cm間;該磁性單元之各永久磁肋條沿該第一方向具有一第二寬度W 2,W 2介於0.5 cm至2 cm間。 The magnetic bearing device for coating according to claim 8, wherein each of the protrusions of the magnetic conductive unit has a first width W 1 in the first direction, and W 1 is between 0.2 cm and 1 cm; Each of the permanent magnetic ribs of the magnetic unit has a second width W 2 in the first direction, and W 2 is between 0.5 cm and 2 cm.
TW105200097U 2016-01-06 2016-01-06 Magnetic carrying device for film coating TWM522948U (en)

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