TWM517917U - Antenna structure - Google Patents
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- TWM517917U TWM517917U TW104217904U TW104217904U TWM517917U TW M517917 U TWM517917 U TW M517917U TW 104217904 U TW104217904 U TW 104217904U TW 104217904 U TW104217904 U TW 104217904U TW M517917 U TWM517917 U TW M517917U
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Description
本創作係一種天線結構,尤指一種多頻段、可拉寬頻寬及提升輻射效益的天線結構。 This creation is an antenna structure, especially an antenna structure with multi-band, wide bandwidth and improved radiation efficiency.
隨著無線通訊軟、硬體技術成長,行動通訊技術由早期的2G、3G演進到今日的4G(即LTE,Long Term Evolution,長期演進技術),都要求天線要朝著小尺寸、多頻段、大頻寬以及高輻射效益等方向來提升,以符合市場需求。 With the growth of wireless communication software and hardware technology, mobile communication technology has evolved from the early 2G and 3G to today's 4G (LTE, Long Term Evolution, long-term evolution technology), requiring antennas to be small, multi-band, Large bandwidth and high radiation efficiency are upgraded to meet market demand.
目前市面上常見多頻段的多頻天線為倒F形天線(Planar Inverted-F Antenna,PIFA)。此類天線採用了簡單的二維設計,透過印刷電路板(PCB)制造工藝直接將銅工藝印在印刷電路板上,以形成一平板狀多頻段的多頻天線,或者利用沖壓技術將金屬薄片沖壓形成一具有三維設計的多頻天線。在現有的專利文獻中,中華民國專利第I463738號揭露了一種「表面貼片式的多頻天線模組」,由該專利第I463738之第一圖至第三圖及第八圖A所示,其中包含有一基板及一載體。 At present, the multi-band antennas commonly used in the market are Planar Inverted-F Antenna (PIFA). This type of antenna uses a simple two-dimensional design to print the copper process directly onto the printed circuit board through a printed circuit board (PCB) manufacturing process to form a flat multi-band multi-band antenna, or to use foil technology to stamp metal foil Stamping forms a multi-frequency antenna with a three-dimensional design. In the prior patent document, a "surface-mount multi-frequency antenna module" is disclosed in the first to third and eighth figures of the patent I463738. It comprises a substrate and a carrier.
該基板係具有一第一表面及第二表面。該第一表面上具有一第一接地金屬面及一第一微帶線,該第一微帶線具一前段及一後段,該前段上具有一穿孔,該第一微帶線的該前段延伸於該第一接地金屬面中,並 與該第一接地金屬面之間形成一間隙。該第一接地金屬面的一側邊連結有一第二微帶線,該第二微帶線與該第一微帶線的該後段呈平行關係並列,且該第一微帶線的該後段與該第二微帶線之間具有一間距,該第一微帶線的該後段及該第二微帶線之間所形成的該間距寬度,可以來調整耦合電容值,使得該第一接地金屬面能形成高頻的諧振點,藉以增加頻寬之用。另於該第一表面上具有一組相對應的二固定接點,該二固定接點用以固接該載體。又於該第二表面上具有一第二接地金屬面,該第二接地金屬面係供與銅軸電纜線的接頭的接地部電性連結。 The substrate has a first surface and a second surface. The first surface has a first grounded metal surface and a first microstrip line. The first microstrip line has a front section and a rear section. The front section has a through hole, and the front section of the first microstrip line extends. In the first grounded metal surface, and A gap is formed with the first grounded metal surface. a second microstrip line is coupled to one side of the first grounded metal surface, the second microstrip line is juxtaposed in parallel with the rear portion of the first microstrip line, and the rear portion of the first microstrip line is Having a spacing between the second microstrip lines, the spacing width formed between the rear portion of the first microstrip line and the second microstrip line, the coupling capacitance value can be adjusted to make the first grounding metal The surface can form a high-frequency resonance point, thereby increasing the bandwidth. In addition, the first surface has a corresponding set of two fixed contacts for fixing the carrier. Further, the second surface has a second grounded metal surface electrically connected to the grounding portion of the joint of the copper shaft cable.
該載體係以高介電常數的陶瓷材料製成一長方體,其上具有一第一輻射金屬部、一第二輻射金屬部及一第三輻射金屬部。該第一輻射金屬部、該第二輻射金屬部及該第三輻射金屬部係以不相同的矩形金屬圖案及直線條金屬圖案設於該載體的至少一個或兩個表面以上,使得天線的體積以微型化。該第一輻射金屬部與該第二輻射金屬部呈電性連結,該第一輻射金屬部及該第二輻射金屬部不與該第三輻射金屬部電性連結。在該載體與該基板電性連結時,該第一輻射金屬部及該第二輻射金屬部與該基板的該第一表面上的該二固定接點電性連結,使該載體可以固接於該基板的該第一表面上。且該第一輻射金屬部及該第二輻射金屬部的連結處與該第一微帶線電性連結,該第三輻射金屬部與該第二微帶線電性連結,以組合成一多頻天線模組。 The carrier is formed of a high dielectric constant ceramic material having a first radiating metal portion, a second radiating metal portion and a third radiating metal portion. The first radiating metal portion, the second radiating metal portion and the third radiating metal portion are disposed on at least one or both surfaces of the carrier with different rectangular metal patterns and straight strip metal patterns, so that the volume of the antenna Miniaturized. The first radiating metal portion is electrically connected to the second radiating metal portion, and the first radiating metal portion and the second radiating metal portion are not electrically connected to the third radiating metal portion. When the carrier is electrically connected to the substrate, the first radiating metal portion and the second radiating metal portion are electrically connected to the two fixed contacts on the first surface of the substrate, so that the carrier can be fixed to the carrier. On the first surface of the substrate. The junction of the first radiating metal portion and the second radiating metal portion is electrically connected to the first microstrip line, and the third radiating metal portion is electrically connected to the second microstrip line to form a plurality of Frequency antenna module.
其中於低頻響應中,第一量測點其頻率值約700MHz,且第三量測點其頻率值約960MHz,因此第三量測點與第一量測點差距約為260MHz,並且其第二量測點於低頻響應中的反射損耗(Return Loss)約為 -11.66dB,低頻響應時產生頻寬稍大,其反射損耗值較趨近於-12dB而增益較小。再者,於中、高頻響應中,第四量測點其頻率值約1.71GHz,且第五量測點其頻率值約2.17GHz,因此第五量測點與第四量測點差距約為460MHz,並且其第四量測點和第五量測點之間的反射損耗值於中、高頻響應中其值可到達約為-17dB,中、高頻響應時產生頻寬較小且增益稍大。 In the low frequency response, the first measurement point has a frequency value of about 700 MHz, and the third measurement point has a frequency value of about 960 MHz, so the third measurement point and the first measurement point have a difference of about 260 MHz, and the second The return loss of the measurement point in the low frequency response is approximately -11.66dB, the frequency of the low frequency response is slightly larger, and the reflection loss value is closer to -12dB and the gain is smaller. Furthermore, in the medium and high frequency response, the fourth measuring point has a frequency value of about 1.71 GHz, and the fifth measuring point has a frequency value of about 2.17 GHz, so that the fifth measuring point is different from the fourth measuring point. It is 460MHz, and the reflection loss value between the fourth measurement point and the fifth measurement point can reach about -17dB in the medium and high frequency response, and the bandwidth is small when the medium and high frequency response are generated. The gain is slightly larger.
此一技術方案中,於中、高頻響應工作時,其頻寬特性較狹窄,無法適用於更高頻率的通訊工作範圍,因而長期演進技術(LTE,Long Term Evolution)全頻段(Full Band)網路適用於相當多的頻段,且不同國家之不同地區選擇的頻段都不相同,台灣目前是使用700/900/1800MHz,其爾後預計開放至2600MHz或更高頻段,對於此習用的天線結構並無法適用。又於低頻響應中為700MHz~960MHz其第二量測點的反射損耗趨近於-10dB而增益較小,產生較差之特性。是故,如何針對以上所論述之缺失加以改進,即為本案申請人所欲解決之技術困難點所在。 In this technical solution, when the medium and high frequency response work, the bandwidth characteristics are narrow and cannot be applied to a higher frequency communication working range, so the long term evolution (LTE, Long Term Evolution) full band (Full Band) The network is suitable for a considerable number of frequency bands, and the frequency bands selected by different regions of different countries are different. Taiwan currently uses 700/900/1800MHz, which is expected to be open to 2600MHz or higher. For this conventional antenna structure, Not applicable. In the low-frequency response, the reflection loss of the second measurement point is 700MHz~960MHz, which is close to -10dB and the gain is small, resulting in poor characteristics. Therefore, how to improve the above-mentioned deficiencies, that is, the technical difficulties that the applicant of this case wants to solve.
有鑑於習用之缺失,因此本創作之目的在於發展一種多頻段、可拉寬頻寬及提升輻射效益的天線結構。 In view of the lack of custom, the purpose of this creation is to develop an antenna structure that is multi-band, wide-bandwidth, and enhances radiation efficiency.
為了達成以上之目的,本創作提供一種天線結構,其包含:一載體,該載體上設有一第一凹槽和一第二凹槽,該載體四周設有複數個第一倒角,該第一凹槽四周設有複數個第二倒角,該第二凹槽四周設有複數個第三倒角;一輻射體,係固設成型於該載體之表面上。 In order to achieve the above object, the present invention provides an antenna structure, comprising: a carrier, the carrier is provided with a first recess and a second recess, and the carrier is provided with a plurality of first chamfers around the carrier, the first A plurality of second chamfers are arranged around the groove, and a plurality of third chamfers are arranged around the second groove; a radiator is fixedly formed on the surface of the carrier.
其中該載體為長條矩形體之形狀,且該輻射體設有一第一金屬輻射部和一第二金屬輻射部,該第一金屬輻射部成型於該載體長邊之第 一面及第二面上,該第二金屬輻射部成型於該載體長邊之第一面及第二面上且延伸成型設有一第一延伸部和一第二延伸部,該第一延伸部成型於該載體長邊之第一面上,且該第二延伸部成型於該載體長邊之第二面上,該第一金屬輻射部相鄰於該第二金屬輻射部及其該第二延伸部,該第二金屬輻射部於該載體長邊之第二面上設有一第一缺口,該第二金屬輻射部於該載體長邊之第三面延伸成型有一第一導電路徑並迴繞連接於該第二金屬輻射部,該第一導電路徑和該第二金屬輻射部之間設有一第二缺口,該第一導電路徑於該載體長邊之第四面延伸成型一第三延伸部,該第二金屬輻射部於該第一導電路徑旁且於該載體長邊之第三面及第四面延伸成型一第二導電路徑,該第二導電路徑於該載體長邊之第三面及第四面延伸成型一第三導電路徑,該第三導電路徑設有一於該載體長邊第三面及第四面之第三缺口,該第三導電路徑於該載體長邊之第三面及第四面延伸成型一第三金屬輻射部,該第三金屬輻射部於該載體長邊之第二面及第一面延伸成型一第四延伸部。 Wherein the carrier is in the shape of a long rectangular body, and the radiator is provided with a first metal radiating portion and a second metal radiating portion, and the first metal radiating portion is formed on the long side of the carrier The second metal radiating portion is formed on the first surface and the second surface of the long side of the carrier and is integrally formed with a first extending portion and a second extending portion, and the first extending portion is formed on one side and the second surface On a first side of the long side of the carrier, and the second extension is formed on a second side of the long side of the carrier, the first metal radiation portion is adjacent to the second metal radiation portion and the second extension thereof The second metal radiating portion is provided with a first notch on the second surface of the long side of the carrier, and the second metal radiating portion is formed on the third side of the long side of the carrier to form a first conductive path and is connected to the second conductive path. a second gap is formed between the first conductive path and the second metal radiating portion, and the first conductive path extends to form a third extending portion on a fourth side of the long side of the carrier. The second metal radiating portion extends along the first conductive path and extends a third conductive path on the third side and the fourth side of the long side of the carrier, the second conductive path is on the third side of the long side of the carrier and Forming a third conductive path by four sides, the third conductive path a third gap between the third side and the fourth side of the long side of the carrier, the third conductive path extending to form a third metal radiating portion on the third side and the fourth side of the long side of the carrier, the third metal radiation The fourth extension portion is formed on the second surface and the first surface of the long side of the carrier.
再者,更具有一第四金屬輻射部和一第五金屬輻射部,該第四金屬輻射部成型於該載體長邊之第一面上且相鄰於該第一凹槽、該第二凹槽和該第二導電路徑旁,該第一凹槽和該第二凹槽與該第四金屬輻射部之間設有一間隔空白區,該第五金屬輻射部成型於該載體長邊之第四面上並相鄰於該第四金屬輻射部,該第二缺口為矩形,該第五金屬輻射部均未與該第四金屬輻射部或第三金屬輻射部相接觸。 Furthermore, a fourth metal radiating portion and a fifth metal radiating portion are formed on the first surface of the long side of the carrier and adjacent to the first groove and the second concave portion. A spacer is formed between the first recess and the second recess and the fourth metal radiating portion, and the fifth metal radiating portion is formed on the long side of the carrier. The surface is adjacent to the fourth metal radiating portion, the second notch is rectangular, and the fifth metal radiating portion is not in contact with the fourth metal radiating portion or the third metal radiating portion.
藉由本創作設有該第一凹槽、該第二凹槽、該等第一倒角、該等第二倒角和該等第三倒角,以及該第二導電路徑、該第三導電路徑、 該第二缺口、該第四金屬輻射部,俾可將該等輻射路徑拉長藉以增加阻抗匹配特性,使得本創作可達到多頻段、可拉寬頻寬及提升輻射效益之功效。 The first groove, the second groove, the first chamfer, the second chamfer and the third chamfer, and the second conductive path and the third conductive path are provided by the present invention , The second notch and the fourth metal radiating portion can extend the radiation path to increase the impedance matching characteristic, so that the creation can achieve the effects of multi-band, widening the bandwidth and improving the radiation benefit.
3‧‧‧載體 3‧‧‧ Carrier
31‧‧‧第一凹槽 31‧‧‧First groove
310‧‧‧第二倒角 310‧‧‧second chamfer
32‧‧‧第二凹槽 32‧‧‧second groove
320‧‧‧第三倒角 320‧‧‧third chamfer
33‧‧‧第一倒角 33‧‧‧First chamfer
4‧‧‧輻射體 4‧‧‧ radiator
41‧‧‧第一金屬輻射部 41‧‧‧First Metal Radiation Department
42‧‧‧第二金屬輻射部 42‧‧‧Second Metal Radiation Department
421‧‧‧第一延伸部 421‧‧‧First Extension
422‧‧‧第二延伸部 422‧‧‧Second extension
43‧‧‧第一導電路徑 43‧‧‧First conductive path
431‧‧‧第三延伸部 431‧‧‧ Third Extension
44‧‧‧第二導電路徑 44‧‧‧Second conductive path
45‧‧‧第三導電路徑 45‧‧‧ third conductive path
46‧‧‧第三金屬輻射部 46‧‧‧ Third Metal Radiation Department
461‧‧‧第四延伸部 461‧‧‧ Fourth Extension
47‧‧‧第四金屬輻射部 47‧‧‧Fourth Metal Radiation Department
48‧‧‧第五金屬輻射部 48‧‧‧ Fifth Metal Radiation Department
51‧‧‧第一缺口 51‧‧‧ first gap
52‧‧‧第二缺口 52‧‧‧ second gap
53‧‧‧第三缺口 53‧‧‧ third gap
54‧‧‧間隔空白區 54‧‧‧ interval blank area
A‧‧‧第一面 A‧‧‧ first side
B‧‧‧第二面 B‧‧‧ second side
C‧‧‧第三面 C‧‧‧ third side
D‧‧‧第四面 D‧‧‧ fourth side
6‧‧‧PCB基板 6‧‧‧PCB substrate
61‧‧‧固定接點 61‧‧‧Fixed joints
62‧‧‧訊號饋入端 62‧‧‧Signal feed end
621‧‧‧第一微帶金屬部 621‧‧‧First Microstrip Metals
63‧‧‧接地金屬面 63‧‧‧Grounded metal surface
631‧‧‧第二微帶金屬部 631‧‧‧Second Microstrip Metals
第一圖係本創作較佳實施例之立體外觀示意圖。 The first figure is a schematic perspective view of a preferred embodiment of the present invention.
第二圖係本創作較佳實施例之另一視角的立體外觀示意圖。 The second drawing is a schematic perspective view of another perspective of the preferred embodiment of the present invention.
第三圖係本創作較佳實施例之又一視角的立體外觀示意圖。 The third drawing is a schematic perspective view of a further perspective of the preferred embodiment of the present invention.
第四圖係本創作較佳實施例之貼設於PCB基板之實施示意圖。 The fourth figure is a schematic diagram of the implementation of the preferred embodiment of the present invention attached to a PCB substrate.
第五圖係本創作較佳實施例之頻率響應曲線示意圖。 The fifth figure is a schematic diagram of the frequency response curve of the preferred embodiment of the present invention.
為了使 貴審查委員能清楚了解本創作之內容,係以下列實施例搭配圖式及符號加以說明,敬請參閱之。 In order for your review board to have a clear understanding of the content of this work, please refer to the following examples with diagrams and symbols, please refer to it.
請參閱第一、第二和第三圖所示,本創作提供一種天線結構,其包含:一載體3及一輻射體4。 Referring to the first, second and third figures, the present invention provides an antenna structure comprising: a carrier 3 and a radiator 4.
該載體3為長條矩形體之形狀,該載體3上設有一第一凹槽31和一第二凹槽32,該載體3四周設有複數個第一倒角33,該第一凹槽31四周設有複數個第二倒角310,該第二凹槽32四周設有複數個第三倒角320,該輻射體4係固設成型於該載體3之表面上,因此該載體3分別具有第一面A、第二面B、第三面C和第四面D。 The carrier 3 is in the shape of a long rectangular body. The carrier 3 is provided with a first recess 31 and a second recess 32. The carrier 3 is surrounded by a plurality of first chamfers 33. The first recess 31 A plurality of second chamfers 310 are disposed around the second recess 32, and a plurality of third chamfers 320 are disposed around the second recess 32. The radiator 4 is fixedly formed on the surface of the carrier 3, so the carrier 3 is respectively There is a first face A, a second face B, a third face C and a fourth face D.
該輻射體4設有一第一金屬輻射部41和一第二金屬輻射部42,該第一金屬輻射部41成型於該載體3長邊之第一面A及第二面B上,該第二金屬輻射部42成型於該載體3長邊之第一面A及第二面B上且延伸成型設 有一第一延伸部421和一第二延伸部422,該第一延伸部421成型於該載體3長邊之第一面A上,且該第二延伸部422成型於該載體3長邊之第二面B上,該第一金屬輻射部41相鄰於該第二金屬輻射部42及其該第二延伸部422,該第二金屬輻射部42於該載體3長邊之第二面B上設有一第一缺口51,該第二金屬輻射部42於該載體3長邊之第三面C延伸成型有一第一導電路徑43並迴繞連接於該第二金屬輻射部42,該第一導電路徑43和該第二金屬輻射部42之間設有一第二缺口52,該第一導電路徑43於該載體3長邊之第四面D延伸成型一第三延伸部431,該第二金屬輻射部42於該第一導電路徑43旁且於該載體3長邊之第三面C及第四面D延伸成型一第二導電路徑44,該第二導電路徑44於該載體3長邊之第三面C及第四面D延伸成型一第三導電路徑45,該第三導電路徑45設有一於該載體3長邊第三面C及第四面D之第三缺口53,該第三導電路徑45於該載體3長邊之第三面C及第四面D延伸成型一第三金屬輻射部46,該第三金屬輻射部46於該載體3長邊之第二面B及第一面A延伸成型一第四延伸部461,於本實施例中,該第二缺口52為矩形,使得該第一導電路徑43拉長。 The radiator 4 is provided with a first metal radiating portion 41 and a second metal radiating portion 42. The first metal radiating portion 41 is formed on the first side A and the second side B of the long side of the carrier 3, and the second The metal radiating portion 42 is formed on the first surface A and the second surface B of the long side of the carrier 3 and is extended and formed. There is a first extension portion 421 and a second extension portion 422 formed on the first surface A of the long side of the carrier 3, and the second extension portion 422 is formed on the long side of the carrier 3 On the two sides B, the first metal radiating portion 41 is adjacent to the second metal radiating portion 42 and the second extending portion 422, and the second metal radiating portion 42 is on the second side B of the long side of the carrier 3. A first notch 51 is disposed. The second metal radiating portion 42 is formed with a first conductive path 43 extending from the third surface C of the long side of the carrier 3 and rewired to the second metal radiating portion 42. The first conductive path is A second gap 52 is formed between the fourth metal radiating portion 42 and the second conductive portion 43. The first conductive path 43 extends to form a third extending portion 431 on the fourth surface D of the long side of the carrier 3. The second metal radiating portion A second conductive path 44 is formed on the third surface C and the fourth surface D of the long side of the carrier 3 adjacent to the first conductive path 43 . The second conductive path 44 is third on the long side of the carrier 3 . A third conductive path 45 is formed on the surface C and the fourth surface D. The third conductive path 45 is provided on the third side C and the fourth side of the long side of the carrier 3. a third gap 53 of D, the third conductive path 45 extends to form a third metal radiating portion 46 on the third surface C and the fourth surface D of the long side of the carrier 3, and the third metal radiating portion 46 is on the carrier 3. The second side B and the first side A of the long side are extended to form a fourth extending portion 461. In the embodiment, the second notch 52 is rectangular, so that the first conductive path 43 is elongated.
再者,更具有一第四金屬輻射部47和一第五金屬輻射部48,該第四金屬輻射部47成型於該載體3長邊之第一面A上且相鄰於該第一凹槽31、該第二凹槽32和該第二導電路徑44旁,該第一凹槽31和該第二凹槽32與該第四金屬輻射部47之間設有一間隔空白區54,該第五金屬輻射部48成型於該載體3長邊之第四面D上並相鄰於該第四金屬輻射部47。於本實施例中,該第四金屬輻射部47和該第五金屬輻射部48均與該輻射體4輻射耦合。 Furthermore, there is a fourth metal radiating portion 47 and a fifth metal radiating portion 48 formed on the first surface A of the long side of the carrier 3 adjacent to the first recess 31. The second recess 32 and the second conductive path 44 are adjacent to each other. A gap blank 54 is disposed between the first recess 31 and the second recess 32 and the fourth metal radiating portion 47. The metal radiating portion 48 is formed on the fourth surface D of the long side of the carrier 3 and adjacent to the fourth metal radiating portion 47. In the present embodiment, the fourth metal radiating portion 47 and the fifth metal radiating portion 48 are both radiatively coupled to the radiator 4.
值得注意的是,在本實施例中,該第五金屬輻射部48均未與 該第四金屬輻射部47或第三金屬輻射部46相接觸或連接。 It should be noted that in this embodiment, the fifth metal radiating portion 48 is not associated with The fourth metal radiating portion 47 or the third metal radiating portion 46 is in contact with or connected.
請繼續參閱第四圖所示,其中該載體3可裝設於一PCB基板6所設有之兩固定接點61上,且該PCB基板6上設有一訊號饋入端62及該訊號饋入端62所延伸的一第一微帶金屬部621,以及該PCB基板6亦設有一接地金屬面63及該接地金屬面63所延伸的一第二微帶金屬部631,該第一金屬輻射部41電性連接於該第二微帶金屬部631,且該第二金屬輻射部42電性連接於該第一微帶金屬部621上,又該訊號饋入端62和該接地金屬面63電性連接訊號饋入線,使得本創作天線可以通訊運作。 Please refer to the fourth figure, wherein the carrier 3 can be mounted on two fixed contacts 61 of a PCB substrate 6, and the signal substrate 62 is provided with a signal feeding end 62 and the signal feeding. A first microstrip metal portion 621 extending from the end 62, and the PCB substrate 6 is also provided with a grounding metal surface 63 and a second microstrip metal portion 631 extending from the grounding metal surface 63. The first metal radiating portion 41 is electrically connected to the second microstrip metal portion 631, and the second metal radiating portion 42 is electrically connected to the first microstrip metal portion 621, and the signal feeding end 62 and the grounding metal surface 63 are electrically connected. The connection signal is fed into the line, so that the antenna can be communicated.
請繼續參閱第五圖所示,其中於低頻響應中,第一量測點其頻率值約791MHz,且第四量測點其頻率值約960MHz,因此第四量測點與第一量測點差距約為169MHz,並且其第二量測點於低頻響應中的反射損耗(Return Loss)約為-14dB,低頻響應時產生頻寬較小,其反射損耗值較趨近於-14dB而增益較大。再者,於中、高頻響應中,第五量測點其頻率值約1.71GHz,且第九量測點其頻率值約2.69GHz,因此第九量測點與第五量測點差距約為980MHz,並且其第七量測點和第八量測點之間的反射損耗值於中、高頻響應中其值可到達約為-14dB,中、高頻響應時產生頻寬較大且增益較小。 Please continue to refer to the fifth figure, in which the first measurement point has a frequency value of about 791 MHz and the fourth measurement point has a frequency value of about 960 MHz, so the fourth measurement point and the first measurement point. The difference is about 169MHz, and the return loss of the second measurement point in the low frequency response is about -14dB. The frequency of the low frequency response is small, and the reflection loss value is closer to -14dB and the gain is smaller. Big. Furthermore, in the medium and high frequency response, the fifth measurement point has a frequency value of about 1.71 GHz, and the ninth measurement point has a frequency value of about 2.69 GHz, so the difference between the ninth measurement point and the fifth measurement point is about It is 980MHz, and the reflection loss value between the seventh measurement point and the eighth measurement point can reach about -14dB in the medium and high frequency response, and the bandwidth is large in the medium and high frequency response. The gain is small.
於本實施例中,主要能解決中、高頻響應中其頻寬不足的問題,使得本創作能適用更高頻段通訊運作而提升其實用性,因此如電信業者所提供的多頻段的網路訊號,以本創作來搭配使用,更能提升網路服務如2G、3G、4G甚至5G訊號的涵蓋率、訊號穿透力及訊號容量,本創作於中、高頻運作時其反射損耗能以不大於-5dB的情況下運作,並使得能符合未來天 線的頻率頻寬規格,並改善低頻響應中其增益較小的問題。請搭配參閱第一、第二和第三圖所示,因此藉由本創作設有該第一凹槽31、該第二凹槽32、該等第一倒角33、該等第二倒角310和該等第三倒角320,以及該第二導電路徑44、該第三導電路徑45、該第二缺口52、該第四金屬輻射部47,俾可將該等輻射路徑拉長及增加阻抗,藉以提升阻抗匹配特性,使得本創作可達到多頻段、可拉寬頻寬及提升輻射效益之功效。 In this embodiment, the problem of insufficient bandwidth in the medium and high frequency response can be solved, so that the present invention can be applied to higher frequency band communication operations and enhance its practicability. Therefore, a multi-band network provided by a telecom operator is provided. The signal, used in conjunction with this creation, can improve the coverage, signal penetration and signal capacity of network services such as 2G, 3G, 4G and even 5G signals. The reflection loss can be achieved when the medium and high frequency are operated. Operates no more than -5dB and enables future days to be met The frequency bandwidth specification of the line and the problem of lower gain in the low frequency response. Please refer to the first, second and third figures, so that the first groove 31, the second groove 32, the first chamfers 33, the second chamfers 310 are provided by the present invention. And the third chamfer 320, and the second conductive path 44, the third conductive path 45, the second notch 52, and the fourth metal radiating portion 47, which can lengthen and increase the impedance of the radiation path In order to improve the impedance matching characteristics, the creation can achieve multi-band, widening the bandwidth and improving the radiation efficiency.
以上所論述者,僅為本創作較佳實施例而已,並非用以限定本創作實施之範圍;故在不脫離本創作之精神與範疇內所作之等效形狀、構造或組合之變化,皆應涵蓋於本創作之申請專利範圍內。 The above discussion is only for the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention; therefore, changes in equivalent shapes, configurations, or combinations that do not depart from the spirit and scope of the present invention should be It is covered by the patent application scope of this creation.
3‧‧‧載體 3‧‧‧ Carrier
31‧‧‧第一凹槽 31‧‧‧First groove
310‧‧‧第二倒角 310‧‧‧second chamfer
32‧‧‧第二凹槽 32‧‧‧second groove
320‧‧‧第三倒角 320‧‧‧third chamfer
33‧‧‧第一倒角 33‧‧‧First chamfer
4‧‧‧輻射體 4‧‧‧ radiator
41‧‧‧第一金屬輻射部 41‧‧‧First Metal Radiation Department
42‧‧‧第二金屬輻射部 42‧‧‧Second Metal Radiation Department
421‧‧‧第一延伸部 421‧‧‧First Extension
44‧‧‧第二導電路徑 44‧‧‧Second conductive path
461‧‧‧第四延伸部 461‧‧‧ Fourth Extension
47‧‧‧第四金屬輻射部 47‧‧‧Fourth Metal Radiation Department
48‧‧‧第五金屬輻射部 48‧‧‧ Fifth Metal Radiation Department
54‧‧‧間隔空白區 54‧‧‧ interval blank area
A‧‧‧第一面 A‧‧‧ first side
D‧‧‧第四面 D‧‧‧ fourth side
Claims (6)
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TW104217904U TWM517917U (en) | 2015-11-09 | 2015-11-09 | Antenna structure |
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TW104217904U TWM517917U (en) | 2015-11-09 | 2015-11-09 | Antenna structure |
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TWM517917U true TWM517917U (en) | 2016-02-21 |
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