TWM517870U - Biometric recognition apparatus with deflection electrode - Google Patents
Biometric recognition apparatus with deflection electrode Download PDFInfo
- Publication number
- TWM517870U TWM517870U TW104207912U TW104207912U TWM517870U TW M517870 U TWM517870 U TW M517870U TW 104207912 U TW104207912 U TW 104207912U TW 104207912 U TW104207912 U TW 104207912U TW M517870 U TWM517870 U TW M517870U
- Authority
- TW
- Taiwan
- Prior art keywords
- electrode
- biometric device
- sensing
- electrodes
- substrate
- Prior art date
Links
Landscapes
- Image Input (AREA)
Abstract
Description
本創作係有關一種生物辨識裝置,尤指一種具有偏向電極之生物辨識裝置。 The present invention relates to a biometric device, and more particularly to a biometric device having a deflecting electrode.
由於電子商務之興起,遠端支付之發展一日千里,故而生物辨識之商業需求急速膨脹,而生物辨識技術又可區分為指紋辨識技術、虹膜辨識技術、DNA辨識技術等。考量效率、安全、與非侵入性等要求,指紋辨識已成為生物辨識之首選技術。指紋辨識技術又有光學式、熱感應式、超音波式與電容式。其中又以電容式技術在裝置體積、成本、省電、可靠、防偽等綜合考量下脫穎而出。 Due to the rise of e-commerce, the development of remote payment has been growing rapidly. Therefore, the commercial demand for biometric identification is rapidly expanding, and the biometric identification technology can be divided into fingerprint identification technology, iris recognition technology, and DNA identification technology. Considering the requirements of efficiency, safety, and non-intrusion, fingerprint identification has become the technology of choice for biometric identification. Fingerprint identification technology is also available in optical, thermal, ultrasonic and capacitive. Among them, capacitive technology stands out under the comprehensive considerations of device size, cost, power saving, reliability, and anti-counterfeiting.
習知之電容式指紋辨識技術有滑動式、全指按壓式等形式。其中,又以全指按壓式在辨識度、效率及方便性中勝出。然而由於感應訊號極其微小與周遭雜訊繁雜具大等因素,全指按壓式之指紋辨識技術通常只能將感應電極與感應電路等一併做在一個積體電路晶片上,且以小於100微米(μm)厚度之藍寶石膜加以保護。如此材料成本與封裝製程成本居高不下,且產品壽命與耐受性堪慮。因此業界莫不致力於提高感測靈敏度與訊號雜訊比,使感應電極與指紋間之感測距離能夠儘量加大,以利感測積體電路之封裝能夠簡化,或直接將其置於保護玻璃下作感應;更甚者,期盼能進一步將感應電極置於非積體電路 之外的基材上以顯著減少晶片面積,並將感應電極整合到保護玻璃底下,甚至整合到顯示面板之中,巨幅降低成本並增進產品之壽命與耐受性,故指紋辨識技術仍有很大的改進空間。 The conventional capacitive fingerprint identification technology has the form of sliding type, full finger pressing type and the like. Among them, the all-finger push type wins in recognition, efficiency and convenience. However, due to the extremely small size of the sensing signal and the complexity of the surrounding noise, the finger-finger fingerprinting technology can only be used on the integrated circuit chip with the sensing electrode and the sensing circuit, and less than 100 micrometers. The (μm) thickness of the sapphire film is protected. Such material costs and packaging process costs remain high, and product life and tolerance are a concern. Therefore, the industry is not committed to improving the sensing sensitivity and signal noise ratio, so that the sensing distance between the sensing electrode and the fingerprint can be maximized, so that the package of the sensing integrated circuit can be simplified, or directly placed in the protective glass. Under the induction; more, expect to further place the sensing electrode in the non-integrated circuit On the other substrate, the chip area is significantly reduced, and the sensing electrode is integrated under the protective glass, even integrated into the display panel, which greatly reduces the cost and improves the life and tolerance of the product. Great room for improvement.
為了解決上述問題,本創作係提供一種具有偏向電極之生物辨識裝置,包含:一基板;一多功能電極層設置於該基板之一側,該多功能電極層包含複數感應電極,複數偏向電極及至少一抑制電極;其中每一該感應電極係被相對應之偏向電極所至少部份圍繞,每一該偏向電極被該抑制電極所至少部份圍繞,及一開關電路層,包含複數個選擇開關及複數條走線,至少部份選擇開關及走線電氣連接至對應之該感應電極,至少一該偏向電極係接收一偏向訊號。 In order to solve the above problems, the present invention provides a biometric device having a deflecting electrode, comprising: a substrate; a multi-function electrode layer disposed on one side of the substrate, the multi-function electrode layer comprising a plurality of sensing electrodes, a plurality of deflecting electrodes and At least one suppression electrode; wherein each of the sensing electrodes is surrounded by at least a portion of the corresponding deflection electrode, each of the deflection electrodes being surrounded by at least a portion of the suppression electrode, and a switching circuit layer comprising a plurality of selection switches And a plurality of traces, at least part of the selection switch and the trace are electrically connected to the corresponding sensing electrode, and at least one of the deflecting electrodes receives a bias signal.
為了能更進一步瞭解本創作為達成預定目的所採取之技術、手段及功效,請參閱以下有關本創作之詳細說明與附圖,相信本創作之目的、特徵與特點,當可由此得一深入且具體之瞭解,然而所附圖式僅提供參考與說明用,並非用來對本創作加以限制者。 In order to further understand the techniques, means and effects of this creation in order to achieve the intended purpose, please refer to the following detailed description and drawings of this creation. I believe that the purpose, characteristics and characteristics of this creation can be obtained in this way. The detailed description is to be understood as merely illustrative and not restrictive
100‧‧‧生物辨識裝置 100‧‧‧Biometric device
10,12,14‧‧‧基板 10,12,14‧‧‧substrate
16‧‧‧電路板 16‧‧‧ boards
18‧‧‧軟性電路板 18‧‧‧Soft circuit board
20‧‧‧開關電路層 20‧‧‧Switch circuit layer
22‧‧‧選擇開關 22‧‧‧Selection switch
23‧‧‧訊號切換開關 23‧‧‧Signal switch
24‧‧‧走線 24‧‧‧Wiring
30‧‧‧第一絕緣層 30‧‧‧First insulation
32‧‧‧第二絕緣層 32‧‧‧Second insulation
34‧‧‧第三絕緣層 34‧‧‧ Third insulation
40‧‧‧反射遮蔽電極層 40‧‧‧Reflecting shielding electrode layer
42‧‧‧反射遮蔽電極 42‧‧‧reflection shielding electrode
50‧‧‧多功能電極層 50‧‧‧Multifunctional electrode layer
52‧‧‧感應電極 52‧‧‧Induction electrodes
54‧‧‧偏向電極 54‧‧‧ deflection electrode
56‧‧‧抑制電極 56‧‧‧Suppression electrode
55,57‧‧‧間隙 55, 57‧ ‧ gap
60‧‧‧保護層 60‧‧‧Protective layer
70‧‧‧感應偵測電路 70‧‧‧Induction detection circuit
72‧‧‧生物辨識感測器 72‧‧‧Biometric sensor
720‧‧‧生物辨識偵測單元 720‧‧‧Biometric detection unit
722‧‧‧偵測訊號產生器 722‧‧‧Detection signal generator
74A‧‧‧第一訊號處理電路 74A‧‧‧First signal processing circuit
74B‧‧‧第二訊號處理電路 74B‧‧‧second signal processing circuit
76‧‧‧參考訊號源 76‧‧‧Reference signal source
80,82,84‧‧‧導通孔 80,82,84‧‧‧through holes
90‧‧‧遮蔽電極層 90‧‧‧shading electrode layer
圖1A為本創作生物辨識裝置之多功能電極層之上視圖。 1A is a top view of a multi-function electrode layer of the biometric identification device.
圖1B為本創作生物辨識裝置之另一範例多功能電極層上視圖。 FIG. 1B is a top view of another exemplary multi-function electrode layer of the biometric identification device.
圖2A為說明本創作生物辨識裝置之感測操作示意圖。 FIG. 2A is a schematic diagram showing the sensing operation of the present biometric identification device. FIG.
圖2B為說明本創作生物辨識裝置之另一範例感測操作示意圖。 FIG. 2B is a schematic diagram showing another example sensing operation of the present invention.
圖3A為本創作生物辨識裝置之側視圖。 Figure 3A is a side view of the creative biometric device.
圖3B為說明本創作生物辨識裝置之反射電極層作用示意圖。 FIG. 3B is a schematic view showing the action of the reflective electrode layer of the present invention.
圖3C為本創作生物辨識裝置之詳細側視圖。 Figure 3C is a detailed side view of the creative biometric device.
圖3D為本創作生物辨識裝置之元件側視圖。 Figure 3D is a side view of the components of the inventive biometric device.
圖4A為本創作生物辨識裝置之另一實施例側視圖。 4A is a side view of another embodiment of the inventive biometric device.
圖4B為圖4A實施例之例詳細側視圖。 Figure 4B is a detailed side view of the embodiment of Figure 4A.
圖5A為本創作生物辨識裝置之另一實施例側視圖。 Figure 5A is a side elevational view of another embodiment of the inventive biometric device.
圖5B為圖5A實施例之例詳細側視圖。 Figure 5B is a detailed side view of the embodiment of Figure 5A.
圖6A為本創作生物辨識裝置之另一實施例詳細側視圖。 6A is a detailed side view of another embodiment of the creative biometric device.
圖6B為本創作生物辨識裝置之另一實施例詳細側視圖。 6B is a detailed side view of another embodiment of the inventive biometric device.
圖6C為本創作生物辨識裝置之另一實施例詳細側視圖。 6C is a detailed side view of another embodiment of the creative biometric device.
圖7A為本創作生物辨識裝置之另一實施例側視圖。 Figure 7A is a side elevational view of another embodiment of the inventive biometric device.
圖7B為本創作生物辨識裝置之另一實施例側視圖。 7B is a side view of another embodiment of the creative biometric device.
圖7C為本創作生物辨識裝置之另一實施例側視圖。 7C is a side view of another embodiment of the creative biometric device.
圖8A為本創作生物辨識裝置之感測操作示意圖。 FIG. 8A is a schematic diagram of sensing operation of the creative biometric device.
圖8B為本創作生物辨識裝置之感測操作之另一示意圖。 FIG. 8B is another schematic diagram of the sensing operation of the creative biometric device.
茲有關本創作之技術內容及詳細說明,配合圖式說明如下:請參閱圖1A係本創作生物辨識裝置100之多功能電極層50之上視圖,本創作之多功能電極層50具有複數感應電極52,複數偏向電極54及至少一抑制電極56。每一感應電極52係被相對應之偏向電極54所至少部份圍繞,每一偏向電極54被抑制電極56所至少部份圍繞,藉以提升感應靈敏度與信號雜訊比。如圖1A所示,偏向電極54係至少部份環繞(例如可以完全環繞)每一感應電極52且與感應電極52電氣隔絕。圖1A所示之感應電極52為四方形,且對應之偏向電極54也界定出對應之四方形間隙55;再者,抑制電極56也有對應之四方形間隙57以環繞對應之偏向電極54。再者,感應電極52也可為其他形狀,例如參見圖1B所示之圓形,且偏向電極54也有對應之圓形間隙55、抑制電極56也有 對應之圓形間隙57。除上述範例外,感應電極52之形狀係可為其他幾何圖形,例如,三角形、正方形、矩形、菱形或多邊形。 The technical content and detailed description of the present invention are described below with reference to the following drawings: Please refer to FIG. 1A for a top view of the multifunctional electrode layer 50 of the present biometric identification device 100. The multifunctional electrode layer 50 of the present invention has a plurality of sensing electrodes. 52, a plurality of deflection electrodes 54 and at least one suppression electrode 56. Each of the sensing electrodes 52 is surrounded by at least a portion of the corresponding deflecting electrode 54. Each of the deflecting electrodes 54 is surrounded by at least a portion of the suppressing electrode 56 to enhance the sensitivity of the sensing and the signal to noise ratio. As shown in FIG. 1A, the deflecting electrode 54 at least partially surrounds (eg, can completely surround) each of the sensing electrodes 52 and is electrically isolated from the sensing electrodes 52. The sensing electrode 52 shown in FIG. 1A is square, and the corresponding deflecting electrode 54 also defines a corresponding square gap 55. Further, the suppressing electrode 56 also has a corresponding square gap 57 to surround the corresponding deflecting electrode 54. Furthermore, the sensing electrode 52 can also have other shapes, such as the circular shape shown in FIG. 1B, and the deflecting electrode 54 also has a corresponding circular gap 55, and the suppressing electrode 56 also has Corresponding circular gap 57. In addition to the above examples, the shape of the sensing electrode 52 can be other geometric shapes, such as triangles, squares, rectangles, diamonds, or polygons.
參見圖2A,為說明本創作生物辨識裝置之感測操作示意圖,多數之感應電極52-1~52-n係經由多數走線24而與多數之選擇開關22-1~22-n分別電氣連接,再經由走線而與感應偵測電路(biometric controller)70電連接;該感應偵測電路70以自電容偵測電路為較佳。多數之偏向電極54-1~54-n係經由走線24而與感應偵測電路70電連接。一抑制電極56係由走線而與一選擇開關22-S電連接,再經由走線而電連接到感應偵測電路70。該感應偵測電路70具有一生物辨識感測器(biometric detector)72,一第一訊號處理電路74A(例如一同相放大器)及一第二訊號處理電路74B(例如一反相放大器)。此生物辨識感測器72具有一生物辨識偵測單元(biometric sensing unit)720及一偵測訊號產生器(sensing signal generator)722。感應偵測電路70可控制選擇開關22而選擇多數之感應電極52其中一個(例如圖2A所示之感應電極52-2),同時偵測訊號產生器722產生一週期性或是非週期性感測訊號(例如一指紋感測訊號)S1並將此訊號經由選擇開關22-2傳送到對應之感應電極52-2;生物辨識偵測單元720接收由感應電極52-2回傳之感應訊號S1’,同時將此感應訊號S1’經由第一訊號處理電路74A(例如一同相放大器)處理之後變成一偏向訊號S2,並傳送該偏向訊號S2到所有之偏向電極54-1~54-n。依據一種實施方式,此感應訊號S1’係經由第二訊號處理電路74B(例如一反相放大器)處理之後變成一抑制訊號S3,且將該抑制訊號S3傳送到抑制電極56,因此,被選擇之感應電極52-2上所產生之感應訊號為S1’,而所有偏向電極54-1~54-n接收偏向訊號S2,且此兩個訊號例如可為同相訊號(例如都是正值訊號),而抑制電極56係接收為反相訊號之抑制訊號S3(例如負值訊號)。復配合圖3B所示之多功能電極層作用示意圖,若在感應電極52上為正電位訊號,且在偏向電極54上加上正電位訊號,及在抑制電極56加上負電位訊號,則會使 電力線更集中在感應電極52之上方表面(對應使用者手指接觸位置),同時減少了周遭抑制電極上方電場對感應電極52之干擾,可提升感應靈敏度與信號雜訊比。此外,偵測訊號產生器722也可產生週期性訊號、非周期性訊號、對稱或不對稱訊號。其中,該週期性之訊號係例如弦波、方波或三角波等。 Referring to FIG. 2A, in order to illustrate the sensing operation of the present biometric device, a plurality of sensing electrodes 52-1~52-n are electrically connected to a plurality of selection switches 22-1~22-n via a plurality of traces 24, respectively. Then, it is electrically connected to the biometric controller 70 via a trace; the inductive detection circuit 70 is preferably a self-capacitance detection circuit. Most of the deflection electrodes 54-1 to 54-n are electrically connected to the inductive detection circuit 70 via the trace 24. A suppression electrode 56 is electrically connected to a selection switch 22-S by a trace, and is electrically connected to the inductive detection circuit 70 via a trace. The inductive detection circuit 70 has a biometric detector 72, a first signal processing circuit 74A (eg, a non-inverting amplifier) and a second signal processing circuit 74B (eg, an inverting amplifier). The biometric sensor 72 has a biometric sensing unit 720 and a sensing signal generator 722. The inductive detection circuit 70 can control the selection switch 22 to select one of the plurality of sensing electrodes 52 (for example, the sensing electrode 52-2 shown in FIG. 2A), and the detecting signal generator 722 generates a periodic or aperiodic sensing signal. (for example, a fingerprint sensing signal) S1 and transmitting the signal to the corresponding sensing electrode 52-2 via the selection switch 22-2; the biometric detecting unit 720 receives the sensing signal S1' returned by the sensing electrode 52-2, At the same time, the sensing signal S1' is processed by the first signal processing circuit 74A (for example, a non-inverting amplifier) to become a bias signal S2, and the deflection signal S2 is transmitted to all of the deflection electrodes 54-1 to 54-n. According to an embodiment, the sensing signal S1' is processed by the second signal processing circuit 74B (for example, an inverting amplifier) to become a suppression signal S3, and the suppression signal S3 is transmitted to the suppression electrode 56, and thus, is selected. The sensing signal generated on the sensing electrode 52-2 is S1', and all the deflection electrodes 54-1~54-n receive the bias signal S2, and the two signals can be, for example, in-phase signals (for example, all positive signals). The suppression electrode 56 receives the suppression signal S3 (for example, a negative signal) which is an inverted signal. Referring to the function diagram of the multifunctional electrode layer shown in FIG. 3B, if a positive potential signal is applied to the sensing electrode 52, a positive potential signal is applied to the deflection electrode 54, and a negative potential signal is applied to the suppression electrode 56, Make The power line is concentrated on the upper surface of the sensing electrode 52 (corresponding to the contact position of the user's finger), and the interference of the electric field above the surrounding suppression electrode on the sensing electrode 52 is reduced, and the sensing sensitivity and the signal noise ratio can be improved. In addition, the detection signal generator 722 can also generate periodic signals, aperiodic signals, symmetric or asymmetric signals. The periodic signal is, for example, a sine wave, a square wave or a triangular wave.
另外,依據另一種實施方式,此抑制電極56係經由選擇開關22-S3而接收一參考訊號源76所輸出之預定位準訊號S4(例如較感應訊號S1’位準低之訊號);該預定位準訊號S4可為正準位訊號、負準位訊號、零準位訊號或交變訊號。同樣地,感應訊號S1’經由第一訊號處理電路74A(例如一同相放大器)處理之後變成一偏向訊號S2,並傳送該偏向訊號S2到所有之偏向電極54-1~54-n。因此,被選擇之感應電極52-2及所有偏向電極54-1~54-n接收同相訊號(例如都是較大正值訊號),而抑制電極56係接收較小正值訊號。復配合圖3B所示之多功能電極層作用示意圖,若在感應電極52及偏向電極54上加上較大正值訊號,且在抑制電極56加上較小正值訊號,同樣會使電力線更集中在感應電極52之上方表面(對應使用者手指接觸位置),可提升感應靈敏度與信號雜訊比。此外,感應偵測電路70也可經由選擇開關22-S1~22-S3而選擇性地將預定位準訊號S4供應至所有(或是被選擇之)感應電極52,及供應至偏向電極54與抑制電極56,其中預定位準訊號S4可為零電位、正電位、負電位、或交變訊號。 In addition, according to another embodiment, the suppression electrode 56 receives a predetermined level signal S4 (for example, a signal lower than the sensing signal S1' level) outputted by the reference signal source 76 via the selection switch 22-S3; The level signal S4 can be a positive level signal, a negative level signal, a zero level signal or an alternating signal. Similarly, the sensing signal S1' is processed by the first signal processing circuit 74A (e.g., a non-inverting amplifier) to become a biasing signal S2, and the biasing signal S2 is transmitted to all of the deflecting electrodes 54-1 to 54-n. Therefore, the selected sensing electrode 52-2 and all of the biasing electrodes 54-1 to 54-n receive the in-phase signals (for example, both are large positive signals), and the suppression electrode 56 receives the smaller positive signals. Referring to the function diagram of the multi-function electrode layer shown in FIG. 3B, if a large positive signal is applied to the sensing electrode 52 and the deflection electrode 54, and a small positive signal is added to the suppression electrode 56, the power line is also made. Concentrating on the upper surface of the sensing electrode 52 (corresponding to the user's finger contact position) can improve the sensing sensitivity and signal noise ratio. In addition, the inductive detection circuit 70 can also selectively supply the predetermined level signal S4 to all (or selected) sensing electrodes 52 via the selection switches 22-S1 22 22-S3, and to the deflection electrodes 54 and The electrode 56 is suppressed, wherein the predetermined level signal S4 can be a zero potential, a positive potential, a negative potential, or an alternating signal.
圖2B為說明本創作生物辨識裝置之另一範例感測操作示意圖。此圖之範例與圖2A大致類似,每一感應電極52-1~52-n具有對應之選擇開關22A-1~22A-n(第一組選擇開關),然而每一偏向電極54-1~54-n具有對應之選擇開關22B-1~22B-n(第二組選擇開關)。同樣地,感應偵測電路70(也可稱作生物辨識裝置控制器)可控制選擇開關22而選擇多數之感應電極52其中一個(例如圖2B所示之感應電極52-2)及多數之偏向電極54其中一個(例如圖2B所示之偏向電極54-2),同時偵測訊號產生器722產生一週期性或是非週期性感測訊號 (例如一指紋感測訊號)S1並將此訊號經由選擇開關22-2傳送到對應之感應電極52-2;生物辨識偵測單元720接收由感應電極52-2回傳之感應訊號S1’,同時將此感應訊號S1’經由第一訊號處理電路74A(例如一同相放大器)處理之後變成一偏向訊號S2,並經由選擇開關22B-2傳送該偏向訊號S2到對應之偏向電極54-2。依據一種實施方式,此感應訊號S1’係經由第二訊號處理電路74B(例如一反相放大器)處理之後變成一抑制訊號S3並將該抑制訊號S3傳送到抑制電極56,因此,被選擇之感應電極52-2上所產生之感應訊號為S1’,而對應偏向電極54-2接收偏向訊號S2,且此兩個訊號例如可為同相訊號(例如都是正值訊號),而抑制電極56係接收為反相訊號之抑制訊號S3(例如負值訊號)。復配合圖3B所示之多功能電極層作用示意圖,若在感應電極52上為正電位訊號,且在偏向電極54上加上正電位訊號,及在抑制電極56加上負電位訊號,則會使電力線更集中在感應電極52之上方表面(對應使用者手指接觸位置),可提升感應靈敏度與信號雜訊比。此外,偵測訊號產生器722也可產生週期性訊號、非周期性訊號、對稱或不對稱訊號。其中,該週期性之訊號係例如弦波、方波或三角波等。 FIG. 2B is a schematic diagram showing another example sensing operation of the present invention. The example of this figure is similar to that of FIG. 2A. Each of the sensing electrodes 52-1~52-n has a corresponding selection switch 22A-1~22A-n (the first group of selection switches), but each deflection electrode 54-1~ 54-n has corresponding selection switches 22B-1 to 22B-n (second group selection switches). Similarly, the inductive detection circuit 70 (also referred to as a biometric device controller) can control the selection switch 22 to select one of the plurality of sensing electrodes 52 (eg, the sensing electrode 52-2 shown in FIG. 2B) and a majority of the biases. One of the electrodes 54 (for example, the deflecting electrode 54-2 shown in FIG. 2B), and the detecting signal generator 722 generates a periodic or aperiodic sensing signal. (for example, a fingerprint sensing signal) S1 and transmitting the signal to the corresponding sensing electrode 52-2 via the selection switch 22-2; the biometric detecting unit 720 receives the sensing signal S1' returned by the sensing electrode 52-2, At the same time, the sensing signal S1' is processed by the first signal processing circuit 74A (for example, a non-inverting amplifier) to become a bias signal S2, and the bias signal S2 is transmitted to the corresponding deflecting electrode 54-2 via the selection switch 22B-2. According to an embodiment, the sensing signal S1' is processed by the second signal processing circuit 74B (for example, an inverting amplifier) to become a suppression signal S3 and the suppression signal S3 is transmitted to the suppression electrode 56. Therefore, the selected sensing is performed. The sensing signal generated on the electrode 52-2 is S1', and the corresponding deflection electrode 54-2 receives the bias signal S2, and the two signals can be, for example, in-phase signals (for example, all positive signals), and the suppression electrode 56 is The suppression signal S3 (for example, a negative signal) is received as an inverted signal. Referring to the function diagram of the multifunctional electrode layer shown in FIG. 3B, if a positive potential signal is applied to the sensing electrode 52, a positive potential signal is applied to the deflection electrode 54, and a negative potential signal is applied to the suppression electrode 56, Concentrating the power line on the upper surface of the sensing electrode 52 (corresponding to the user's finger contact position) can improve the sensing sensitivity and signal noise ratio. In addition, the detection signal generator 722 can also generate periodic signals, aperiodic signals, symmetric or asymmetric signals. The periodic signal is, for example, a sine wave, a square wave or a triangular wave.
另外,依據另一種實施方式,此抑制電極56係經由選擇開關22-S3而接收一參考訊號源76所輸出之預定位準訊號S4(例如較感應訊號S1’位準低之訊號)。同樣地,感應訊號S1’經由第一訊號處理電路74A(例如一同相放大器)處理之後變成一偏向訊號S2,並傳送到被選擇之偏向電極54-2。因此,被選擇之感應電極52-2及被選擇偏向電極54-2接收同相訊號(例如都是較大正值訊號),而抑制電極56係接收較小正值訊號。復配合圖3B所示之多功能電極層作用示意圖,若在感應電極52及偏向電極54上加上較大正值訊號,且在抑制電極56加上較小正值訊號,同樣會使電力線更集中在感應電極52之上方表面(對應使用者手指接觸位置),同時減少了周遭抑制電極上方電場對感應電極52之干擾,可提升感應靈敏度與信號雜訊比。此外,感應偵測電路70也可經由選擇開 關22-S1~22-S3而選擇性地將預定位準訊號S4供應至所有(或是被選擇之)感應電極52及偏向電極54,及供應至抑制電極56,其中預定位準訊號S4可為零電位、正電位、負電位、或交變訊號。 In addition, according to another embodiment, the suppression electrode 56 receives a predetermined level signal S4 (for example, a signal lower than the level of the sensing signal S1') outputted by the reference signal source 76 via the selection switch 22-S3. Similarly, the sensing signal S1' is processed by the first signal processing circuit 74A (e.g., a non-inverting amplifier) to become a biasing signal S2 and transmitted to the selected deflection electrode 54-2. Therefore, the selected sensing electrode 52-2 and the selected biasing electrode 54-2 receive the in-phase signals (for example, both are large positive signals), and the suppression electrode 56 receives the smaller positive signals. Referring to the function diagram of the multi-function electrode layer shown in FIG. 3B, if a large positive signal is applied to the sensing electrode 52 and the deflection electrode 54, and a small positive signal is added to the suppression electrode 56, the power line is also made. The focus is on the upper surface of the sensing electrode 52 (corresponding to the position of the user's finger contact), and at the same time, the interference of the electric field above the surrounding suppression electrode on the sensing electrode 52 is reduced, and the sensing sensitivity and the signal noise ratio can be improved. In addition, the inductive detection circuit 70 can also be opened via selection. The off-level signal S4 is selectively supplied to all (or selected) of the sensing electrode 52 and the deflecting electrode 54 and to the suppressing electrode 56, wherein the predetermined level signal S4 can be turned off by 22-S1~22-S3. Zero potential, positive potential, negative potential, or alternating signal.
參見圖3A-3D,分別為本創作生物辨識裝置之側視圖、多功能電極層作用示意圖、本創作生物辨識裝置之詳細側視圖及元件側視圖。如圖3A所示,依據本創作一範例之生物辨識裝置100具有由下而上排列之一基板10、一開關電路層20、一第一絕緣層30、一多功能電極層50及一保護層60。再者,於此多層結構中,開關電路層20具有複數之選擇開關22及複數條走線24;多功能電極層50可具有如圖1A或是圖1B所示之位在同一面上之複數感應電極52,複數偏向電極54及至少一抑制電極56。由於開關電路層20及多功能電極層50上具有金屬走線及電極,因此彼此之間須有第一絕緣層30使其隔絕。參見圖3C,在基板10上之開關電路層20具有複數之選擇開關22及複數條走線24,且走線經由導通孔(Via hole)80而電氣連接到對應之感應電極52、偏向電極54及抑制電極56,使感應電極52、偏向電極54及抑制電極56可以電氣連接到對應之選擇開關22。如圖3D所示,此選擇開關22例如可以為薄膜電晶體(TFT)開關22,且經由走線24及導通孔80而電氣連接到對應之感應電極52。同樣地,雖然未具體繪示出來,偏向電極54經由導通孔80而電氣連接到對應之走線,再經過對應走線而電氣連接到對應之TFT選擇開關22。同樣的,抑制電極56也經由導通孔80而電氣連接到對應之走線,再經過對應走線而電氣連接到對應之TFT選擇開關22。在圖3A-3D所示之生物辨識裝置100中,保護層60係提供抗氧化、防潮與抗刮擦的保護作用。 3A-3D are respectively a side view of the creative biometric device, a schematic diagram of the function of the multifunctional electrode layer, a detailed side view of the creative biometric device, and a side view of the components. As shown in FIG. 3A, the biometric device 100 according to the present invention has a substrate 10, a switch circuit layer 20, a first insulating layer 30, a multi-function electrode layer 50 and a protective layer arranged from bottom to top. 60. Moreover, in the multi-layer structure, the switch circuit layer 20 has a plurality of select switches 22 and a plurality of traces 24; the multi-function electrode layer 50 may have a plurality of bits on the same plane as shown in FIG. 1A or FIG. 1B. The sensing electrode 52, the plurality of deflection electrodes 54 and the at least one suppression electrode 56. Since the switch circuit layer 20 and the multi-function electrode layer 50 have metal traces and electrodes thereon, a first insulating layer 30 is required to be isolated from each other. Referring to FIG. 3C, the switch circuit layer 20 on the substrate 10 has a plurality of select switches 22 and a plurality of traces 24, and the traces are electrically connected to the corresponding sense electrodes 52 and deflection electrodes 54 via via holes 80. And the suppression electrode 56, the induction electrode 52, the deflection electrode 54, and the suppression electrode 56 can be electrically connected to the corresponding selection switch 22. As shown in FIG. 3D, the selection switch 22 can be, for example, a thin film transistor (TFT) switch 22, and is electrically connected to the corresponding sensing electrode 52 via the trace 24 and the via 80. Similarly, although not specifically illustrated, the deflection electrode 54 is electrically connected to the corresponding trace via the via 80 and electrically connected to the corresponding TFT select switch 22 via the corresponding trace. Similarly, the suppression electrode 56 is also electrically connected to the corresponding trace via the via 80, and is electrically connected to the corresponding TFT select switch 22 via the corresponding trace. In the biometric device 100 illustrated in Figures 3A-3D, the protective layer 60 provides protection against oxidation, moisture, and scratches.
在圖3A-3D所示範例中,該基板10為玻璃、高分子薄膜材料、金屬、矽或矽的化合物基板。具體而言,上述金屬基板係為不鏽鋼、鋁、銅、鐵、銀、錫、鎢或前述之合金。感應電極52、偏向電極54及抑制電極56係為透明導電材料或不透明導電材料所製成。透明導電材料係為氧化銦錫(indium tin oxide, ITO)、氧化鋅錫(zinc tin oxide,ZTO)、氧化鋅(ZnO)、鎵鋅氧化物(GZO)導電高分子、奈米碳管、石墨烯、或厚度小於50nm之銀膜。其中,該不透明導電材料係為鉻、鋇、鉬、鋁、銀、銅、鈦、鎳、鉭、鈷、鎢、鎂、鈣、鉀、鋰、銦或前述之合金或氟化鋰與鋁組成物、氟化鎂與鋁組成物或氧化鋰與鋁組成物。 In the example shown in FIGS. 3A-3D, the substrate 10 is a compound substrate of glass, polymer film material, metal, tantalum or niobium. Specifically, the metal substrate is stainless steel, aluminum, copper, iron, silver, tin, tungsten or the alloy described above. The sensing electrode 52, the deflecting electrode 54, and the suppressing electrode 56 are made of a transparent conductive material or an opaque conductive material. The transparent conductive material is indium tin oxide (indium tin oxide, ITO), zinc tin oxide (ZTO), zinc oxide (ZnO), gallium zinc oxide (GZO) conductive polymer, carbon nanotube, graphene, or silver film having a thickness of less than 50 nm. Wherein, the opaque conductive material is composed of chromium, bismuth, molybdenum, aluminum, silver, copper, titanium, nickel, ruthenium, cobalt, tungsten, magnesium, calcium, potassium, lithium, indium or the foregoing alloy or lithium fluoride and aluminum. a composition of magnesium fluoride and aluminum or a composition of lithium oxide and aluminum.
圖4A本創作生物辨識裝置之另一範例側視圖,圖4B為對應圖4A之詳細側視圖。此些圖示所示範例類似於圖3A所示範例,因此類似之元件係採用類似之圖號。在圖4A所示之生物辨識裝置100另外包含在開關電路層20及多功能電極層50之間的反射遮蔽電極層40,用以提供該些走線及該些感應電極更佳的屏蔽雜訊干擾功能。為了提供開關電路層20、反射遮蔽電極層40及多功能電極層50之間的電性絕緣,在開關電路層20及反射遮蔽電極層40之間具有第一絕緣層30;在反射遮蔽電極層40及多功能電極層50之間具有第二絕緣層32。再者,如圖4B所示,在多功能電極層50上之感應電極52、偏向電極54及抑制電極56係分別藉由各自之導通孔80而電性連接到開關電路層20上之選擇開關22及走線24(圖未示)。另外,反射遮蔽電極層40之反射遮蔽電極42也藉由導通孔82而電性連接到開關電路層20上之選擇開關22及走線24(圖未示)。 4A is a side view of another example of the present invention, and FIG. 4B is a detailed side view corresponding to FIG. 4A. The examples shown in these illustrations are similar to the example shown in Figure 3A, so similar components are similarly numbered. The biometric device 100 shown in FIG. 4A additionally includes a reflective shielding electrode layer 40 between the switching circuit layer 20 and the multi-function electrode layer 50 for providing the wiring and better shielding noise of the sensing electrodes. Interference function. In order to provide electrical insulation between the switching circuit layer 20, the reflective shielding electrode layer 40 and the multi-function electrode layer 50, there is a first insulating layer 30 between the switching circuit layer 20 and the reflective shielding electrode layer 40; and a reflective shielding electrode layer There is a second insulating layer 32 between the 40 and the multi-function electrode layer 50. Furthermore, as shown in FIG. 4B, the sensing electrode 52, the deflecting electrode 54 and the suppressing electrode 56 on the multi-function electrode layer 50 are electrically connected to the selection switch on the switch circuit layer 20 through the respective via holes 80, respectively. 22 and the line 24 (not shown). In addition, the reflective shielding electrode 42 of the reflective shielding electrode layer 40 is also electrically connected to the selection switch 22 and the trace 24 (not shown) on the switch circuit layer 20 via the via 82.
圖5A本創作生物辨識裝置之另一範例側視圖,圖5B為對應圖5A之詳細側視圖。此些圖示所示範例類似於圖4A所示範例,因此類似之元件係採用類似之圖號。在圖5A所示之生物辨識裝置100另外包含在開關電路層20及反射遮蔽電極層40之間的遮蔽電極層90,用以提供該些走線及該些感應電極更佳的屏蔽雜訊干擾功能。此外,為了提供開關電路層20、遮蔽電極層90、反射遮蔽電極層40及多功能電極層50之間的電性絕緣,在此四層電路層/電極層之間有三層絕緣層30,32,34以提供電性絕緣。如圖5B所示,在多功能電極層50上之感應電極52、偏向電極54及抑制電極56係分別藉由各自之導通孔80而電性連接到開關電路層20上之選擇開關22及走線24(圖未示)。另外,反射遮蔽電極層40之反 射遮蔽電極42也藉由導通孔82而電性連接到開關電路層20上之選擇開關22及走線24(圖未示);遮蔽電極層90之遮蔽電極92也藉由導通孔84而電性連接到開關電路層20上之選擇開關22及走線24(圖未示)。 Fig. 5A is a side view showing another example of the present invention, and Fig. 5B is a detailed side view corresponding to Fig. 5A. The examples shown in these figures are similar to the example shown in Figure 4A, so similar components are similarly numbered. The biometric device 100 shown in FIG. 5A additionally includes a shielding electrode layer 90 between the switching circuit layer 20 and the reflective shielding electrode layer 40 for providing the traces and the shielding electrodes for better shielding noise interference. Features. In addition, in order to provide electrical insulation between the switching circuit layer 20, the shielding electrode layer 90, the reflective shielding electrode layer 40, and the multi-function electrode layer 50, there are three insulating layers 30, 32 between the four circuit layers/electrode layers. , 34 to provide electrical insulation. As shown in FIG. 5B, the sensing electrode 52, the deflecting electrode 54 and the suppressing electrode 56 on the multi-function electrode layer 50 are electrically connected to the selection switch 22 on the switch circuit layer 20 through the respective via holes 80, respectively. Line 24 (not shown). In addition, the opposite of the reflective shielding electrode layer 40 The shielding electrode 42 is also electrically connected to the selection switch 22 and the trace 24 (not shown) on the switch circuit layer 20 through the via 82. The shield electrode 92 of the shield electrode layer 90 is also electrically connected by the via 84. The switch 22 and the trace 24 (not shown) are connected to the switch circuit layer 20.
圖6A為本創作生物辨識裝置之另一實施例側視圖。圖6A所示之生物辨識裝置類似圖3A所示範例,因此類似之元件係採用類似之圖號。與圖3A所示範例相比較,圖6A所示生物辨識裝置之保護層60係在裝置之最下側,而基板10係位在裝置之最上側,且基板10較佳者可為玻璃基板,以達成防刮效果。此外,由於保護層60並不需有防刮效果,使得其材料選擇性較為寬廣,例如此保護層60也可為其他裝置基板之延伸。 Figure 6A is a side elevational view of another embodiment of the inventive biometric device. The biometric device shown in Fig. 6A is similar to the example shown in Fig. 3A, and thus similar components are similarly numbered. Compared with the example shown in FIG. 3A, the protective layer 60 of the biometric device shown in FIG. 6A is on the lowermost side of the device, and the substrate 10 is on the uppermost side of the device, and the substrate 10 is preferably a glass substrate. To achieve a scratch-resistant effect. In addition, since the protective layer 60 does not need to have a scratch-proof effect, the material selectivity thereof is relatively wide. For example, the protective layer 60 can also be an extension of other device substrates.
圖6B所示之生物辨識裝置100係類似之圖3A所示範例,然基板係為金屬基板12,例如不鏽鋼、鋁、銅、鐵、銀、錫、鎢或前述之合金之基板。再者,感應偵測電路70可為積體電路晶片形式,且此積體電路晶片係係黏結或壓銲於該基板12上。如圖6B所示,此積體電路晶片形式之感應偵測電路70也可係黏結或壓銲於一電路板16上,並經由一軟性電路板18之電路走線與該基板12之走線電氣連接。於此範例中,該選擇開關22例如可為薄膜電晶體開關22,並且成長於該金屬基板12上。 The biometric device 100 shown in FIG. 6B is similar to the example shown in FIG. 3A, and the substrate is a metal substrate 12 such as a substrate of stainless steel, aluminum, copper, iron, silver, tin, tungsten or the foregoing alloy. Furthermore, the inductive detection circuit 70 can be in the form of an integrated circuit chip, and the integrated circuit chip is bonded or pressure bonded to the substrate 12. As shown in FIG. 6B, the inductive detection circuit 70 in the form of an integrated circuit chip can also be bonded or soldered to a circuit board 16 and routed through the circuit of a flexible circuit board 18 to the substrate 12. Electrical connections. In this example, the selection switch 22 can be, for example, a thin film transistor switch 22 and grown on the metal substrate 12.
圖6C所示之生物辨識裝置100係類似之圖3A所示範例,然基板係為矽質基板14,且在開關電路層20中可以積體電路製作技術另外製作出如圖3A所示之感應偵測電路70電路,使得生物辨識裝置100整體而言可以IC化。再者,保護層60例如可為積體電路封裝材料,如陶瓷或是藍寶石封裝材料。此外,於此範例中,該選擇開關22例如可為場效電晶體開關22,並且成長於該矽質基板14上。 The biometric device 100 shown in FIG. 6C is similar to the example shown in FIG. 3A, and the substrate is a enamel substrate 14, and in the switch circuit layer 20, an integrated circuit fabrication technique can be used to separately produce the sensing as shown in FIG. 3A. The circuit of the detecting circuit 70 is such that the biometric device 100 as a whole can be ICized. Furthermore, the protective layer 60 can be, for example, an integrated circuit packaging material such as a ceramic or sapphire packaging material. Moreover, in this example, the selection switch 22 can be, for example, a field effect transistor switch 22 and grow on the enamel substrate 14.
圖7A-7C為本創作生物辨識裝置之其他實施例側視圖。圖7A之生物辨識裝置100類似於圖3A所示範例,因此類似之元件係採用類似之圖號。在圖 7A中,係在開關電路層20’之多餘空間可另外設置反射遮蔽電極,以提供對上側感應電極及走線之更佳電磁遮蔽效果。 7A-7C are side views of other embodiments of the inventive biometric device. The biometric device 100 of Fig. 7A is similar to the example shown in Fig. 3A, and thus similar components are similarly numbered. In the picture In 7A, a reflective shield electrode may be additionally provided in the excess space of the switch circuit layer 20' to provide better electromagnetic shielding effect on the upper side sensing electrode and the trace.
圖7B為本創作生物辨識裝置之另一實施例側視圖,此範例類似於圖7A之範例,然生物辨識裝置之保護層60係在裝置之最下側,而基板10係位在裝置之最上側,且基板10較佳者可為玻璃基板,以達成防刮效果。此實施例之基板亦適用於高分子薄膜材料,並將此基板之背對多功能電極層之一面黏貼於觸控顯示面板之保護玻璃下方操作。此外,由於保護層60並不需有防刮效果,使得其材料選擇性較為寬廣,例如此保護層60也可為其他裝置基板之延伸。 7B is a side view of another embodiment of the biometric identification device. The example is similar to the example of FIG. 7A. However, the protective layer 60 of the biometric device is on the lowermost side of the device, and the substrate 10 is at the top of the device. The side, and the substrate 10 is preferably a glass substrate to achieve a scratch-resistant effect. The substrate of this embodiment is also suitable for the polymer film material, and the back surface of the substrate is adhered to the protective glass of the touch display panel. In addition, since the protective layer 60 does not need to have a scratch-proof effect, the material selectivity thereof is relatively wide. For example, the protective layer 60 can also be an extension of other device substrates.
圖7C為本創作生物辨識裝置之另一實施例側視圖,此範例類似於圖7A之範例,然基板係為金屬基板12,例如不鏽鋼、鋁、銅、鐵、銀、錫、鎢或前述之合金之基板。此金屬基板12可經由軟性電路板而電性連接到另一積體電路,如圖3A所示之感應偵測電路70。 7C is a side view of another embodiment of the biometric identification device, which is similar to the example of FIG. 7A, wherein the substrate is a metal substrate 12, such as stainless steel, aluminum, copper, iron, silver, tin, tungsten or the foregoing. The substrate of the alloy. The metal substrate 12 can be electrically connected to another integrated circuit via a flexible circuit board, such as the inductive detection circuit 70 shown in FIG. 3A.
圖8A為本創作生物辨識裝置100之感測操作示意圖,此生物辨識裝置100例如可為圖2A所示之生物辨識裝置100,亦即偏向電極54都接收偏向訊號S2,而多數之感應電極52係經由對應之選擇開關22而選擇性的接收感測訊號S1。 FIG. 8A is a schematic diagram of the sensing operation of the biometric device 100. The biometric device 100 can be, for example, the biometric device 100 shown in FIG. 2A. That is, the deflecting electrode 54 receives the biasing signal S2, and the plurality of sensing electrodes 52. The sensing signal S1 is selectively received via the corresponding selection switch 22.
圖8B為本創作生物辨識裝置之感測操作之另一示意圖,此生物辨識裝置100例如可為圖2B所示之生物辨識裝置100,亦即多數之偏向電極54係經由對應之第二組選擇開關22B及訊號切換開關23而接收偏向訊號S2或是預定位準訊號S4,而多數之感應電極52係經由對應之第一組選擇開關22A而選擇性的接收感測訊號S1。此偏向訊號S2例如可為圖2B所示之第一訊號處理電路74A(例如一同相放大器)所產生;而預定位準訊號S4例如可為圖2B所示之參考訊號源76所輸出之預定位準訊號S4。 FIG. 8B is another schematic diagram of the sensing operation of the biometric identification device. The biometric device 100 can be, for example, the biometric device 100 shown in FIG. 2B, that is, the majority of the deflecting electrodes 54 are selected via the corresponding second group. The switch 22B and the signal switching switch 23 receive the bias signal S2 or the predetermined level signal S4, and the plurality of sensing electrodes 52 selectively receive the sensing signal S1 via the corresponding first group selection switch 22A. The bias signal S2 can be generated, for example, by the first signal processing circuit 74A (for example, a non-inverting amplifier) shown in FIG. 2B; and the predetermined level signal S4 can be, for example, a predetermined bit output by the reference signal source 76 shown in FIG. 2B. Quasi-signal S4.
綜上所述,本創作可以達成下列功效: In summary, this creation can achieve the following effects:
1.由於在感應電極外側具有與其電氣隔絕之偏向電極,且偏向電極外側有與其電氣隔絕之抑制電極,且在偏向電極上施加一適當之偏向訊號,因此提高感測靈敏度與訊號雜訊比,使感應電極與指紋間之感測距離能夠儘量加大。 1. Since there is a biasing electrode electrically insulated from the outside of the sensing electrode, and a suppressing electrode electrically isolated from the outside of the deflecting electrode, and a suitable biasing signal is applied to the deflecting electrode, the sensing sensitivity and the signal noise ratio are improved. The sensing distance between the sensing electrode and the fingerprint can be increased as much as possible.
2.若在感應電極、偏向電極及抑制電極上施加感應訊號、偏向訊號、與抑制訊號,不僅使電力線更集中在感應電極之上方表面(對應使用者手指接觸位置),並抑制感應電極外側上方之電場對感應電極之干擾,可更提升感應靈敏度與信號雜訊比。 2. If the sensing signal, the deflection signal, and the suppression signal are applied to the sensing electrode, the deflection electrode and the suppression electrode, not only the power line is concentrated on the upper surface of the sensing electrode (corresponding to the contact position of the user's finger), and the outer side of the sensing electrode is suppressed. The electric field interferes with the sensing electrode, which can improve the sensing sensitivity and signal noise ratio.
3.本創作之感應電極不僅可實施於積體電路內,更適宜實施於積體電路之外的基材(例如金屬、高分子薄膜與玻璃等基材)上以顯著減少晶片面積,有效降低製造成本。 3. The sensing electrode of the present invention can be implemented not only in an integrated circuit but also on a substrate other than the integrated circuit (for example, a substrate such as a metal, a polymer film, or a glass) to significantly reduce the wafer area and effectively reduce the area. manufacturing cost.
惟,以上所述,僅為本創作較佳具體實施例之詳細說明與圖式,惟本創作之特徵並不侷限於此,並非用以限制本創作,本創作之所有範圍應以下述之申請專利範圍為準,凡合於本創作申請專利範圍之精神與其類似變化之實施例,皆應包含於本創作之範疇中,任何熟悉該項技藝者在本創作之領域內,可輕易思及之變化或修飾皆可涵蓋在以下本案之專利範圍。 However, the above description is only for the detailed description and the drawings of the preferred embodiments of the present invention, but the features of the present invention are not limited thereto, and are not intended to limit the creation. All the scope of the creation should be as follows. The scope of patents shall prevail, and all embodiments that incorporate the spirit of the patent application scope and similar changes shall be included in the scope of this creation. Anyone familiar with the art may easily think of it in the field of this creation. Variations or modifications may be covered by the patents in this case below.
10‧‧‧基板 10‧‧‧Substrate
20‧‧‧開關電路層 20‧‧‧Switch circuit layer
22‧‧‧選擇開關 22‧‧‧Selection switch
24‧‧‧走線 24‧‧‧Wiring
30‧‧‧第一絕緣層 30‧‧‧First insulation
50‧‧‧多功能電極層 50‧‧‧Multifunctional electrode layer
52‧‧‧感應電極 52‧‧‧Induction electrodes
54‧‧‧偏向電極 54‧‧‧ deflection electrode
55‧‧‧間隙 55‧‧‧ gap
56‧‧‧抑制電極 56‧‧‧Suppression electrode
57‧‧‧間隙 57‧‧‧ gap
60‧‧‧保護層 60‧‧‧Protective layer
80‧‧‧導通孔 80‧‧‧through hole
Claims (15)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW104207912U TWM517870U (en) | 2015-05-21 | 2015-05-21 | Biometric recognition apparatus with deflection electrode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW104207912U TWM517870U (en) | 2015-05-21 | 2015-05-21 | Biometric recognition apparatus with deflection electrode |
Publications (1)
Publication Number | Publication Date |
---|---|
TWM517870U true TWM517870U (en) | 2016-02-21 |
Family
ID=55811964
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW104207912U TWM517870U (en) | 2015-05-21 | 2015-05-21 | Biometric recognition apparatus with deflection electrode |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWM517870U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI584185B (en) * | 2016-04-01 | 2017-05-21 | 速博思股份有限公司 | Integral sensing apparatus for touch and force sensing and method for the same |
-
2015
- 2015-05-21 TW TW104207912U patent/TWM517870U/en not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI584185B (en) * | 2016-04-01 | 2017-05-21 | 速博思股份有限公司 | Integral sensing apparatus for touch and force sensing and method for the same |
US10209805B2 (en) | 2016-04-01 | 2019-02-19 | Superc-Touch Corporation | Integral sensing apparatus for touch and force sensing and method for the same |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI528212B (en) | Biometric recognition apparatus with deflection electrode and method for the same | |
TWI566120B (en) | Biometric recognition apparatus with reflection-shielding electrode and method of detection control the same | |
TWM508714U (en) | Biometric recognition apparatus with reflection-shielding electrode | |
US10203750B2 (en) | Touch panel and a manufacturing method thereof | |
TWI424341B (en) | Touch display structure and touch display apparatus comprising the same | |
US20160259447A1 (en) | Touch panel and touch display panel | |
TW201804357A (en) | Interference-free fingerprint identification device | |
US10698547B2 (en) | Touch panel and organic light emitting diode display panel | |
TW201642100A (en) | Touch sensor | |
CN106293188B (en) | Touch panel | |
US9892305B2 (en) | Biometric recognition apparatus | |
KR20150145769A (en) | Touch panel using touch pen with power coil pattern | |
KR101401053B1 (en) | Touch sensing electrode and touch screen panel | |
KR102082485B1 (en) | Transparent electrode and electronic device including the same | |
TWM517870U (en) | Biometric recognition apparatus with deflection electrode | |
KR20110117932A (en) | Capacitive overlay touch panel and manufacture method thereof | |
TW201725487A (en) | Touch panels | |
KR20190111871A (en) | Touch sensor | |
CN207458026U (en) | Touch sensor and touch panel and image display including touch sensor | |
CN205375429U (en) | Touch panel | |
WO2022227137A1 (en) | Three-dimensional touch sensor and display device | |
JP3216380U (en) | Touchpad with auxiliary conductive wire | |
TWM503617U (en) | Finger-swiping biometric recognition apparatus | |
TWM517375U (en) | Two-substrate fingerprint recognition device | |
JP2019098565A (en) | Laminate |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4K | Annulment or lapse of a utility model due to non-payment of fees |