TWM517870U - Biometric recognition apparatus with deflection electrode - Google Patents

Abstract

A biometric recognition apparatus with deflection electrode includes a substrate, a multi-function electrode layer arranged on one side of the substrate, the multi-function electrode layer including a plurality of sensing electrodes, a plurality of deflection electrodes and at least one suppressing electrode. Each of the sensing electrodes is at least partially surrounded by a corresponding deflection electrode and each of the deflection electrodes is at least partially surrounded by the suppressing electrode. The sensing electrodes, the deflection electrodes and the suppressing electrode are arranged on the same face of the substrate. The biometric recognition apparatus further includes a switching circuit layer having a plurality of selection switches and conductive wires, at least a part of the selection switches and the conductive wires are electrically connected to the sensing electrodes. By above arrangement of the sensing electrodes, the deflection electrodes and the suppressing electrode, the sensing sensibility and signal to noise ration can be enhanced, thus increasing the sensing distance between sensing electrode and user finger.

Description

Biometric device with deflecting electrode

The present invention relates to a biometric device, and more particularly to a biometric device having a deflecting electrode.

Due to the rise of e-commerce, the development of remote payment has been growing rapidly. Therefore, the commercial demand for biometric identification is rapidly expanding, and the biometric identification technology can be divided into fingerprint identification technology, iris recognition technology, and DNA identification technology. Considering the requirements of efficiency, safety, and non-intrusion, fingerprint identification has become the technology of choice for biometric identification. Fingerprint identification technology is also available in optical, thermal, ultrasonic and capacitive. Among them, capacitive technology stands out under the comprehensive considerations of device size, cost, power saving, reliability, and anti-counterfeiting.

The conventional capacitive fingerprint identification technology has the form of sliding type, full finger pressing type and the like. Among them, the all-finger push type wins in recognition, efficiency and convenience. However, due to the extremely small size of the sensing signal and the complexity of the surrounding noise, the finger-finger fingerprinting technology can only be used on the integrated circuit chip with the sensing electrode and the sensing circuit, and less than 100 micrometers. The (μm) thickness of the sapphire film is protected. Such material costs and packaging process costs remain high, and product life and tolerance are a concern. Therefore, the industry is not committed to improving the sensing sensitivity and signal noise ratio, so that the sensing distance between the sensing electrode and the fingerprint can be maximized, so that the package of the sensing integrated circuit can be simplified, or directly placed in the protective glass. Under the induction; more, expect to further place the sensing electrode in the non-integrated circuit On the other substrate, the chip area is significantly reduced, and the sensing electrode is integrated under the protective glass, even integrated into the display panel, which greatly reduces the cost and improves the life and tolerance of the product. Great room for improvement.

In order to solve the above problems, the present invention provides a biometric device having a deflecting electrode, comprising: a substrate; a multi-function electrode layer disposed on one side of the substrate, the multi-function electrode layer comprising a plurality of sensing electrodes, a plurality of deflecting electrodes and At least one suppression electrode; wherein each of the sensing electrodes is surrounded by at least a portion of the corresponding deflection electrode, each of the deflection electrodes being surrounded by at least a portion of the suppression electrode, and a switching circuit layer comprising a plurality of selection switches And a plurality of traces, at least part of the selection switch and the trace are electrically connected to the corresponding sensing electrode, and at least one of the deflecting electrodes receives a bias signal.

In order to further understand the techniques, means and effects of this creation in order to achieve the intended purpose, please refer to the following detailed description and drawings of this creation. I believe that the purpose, characteristics and characteristics of this creation can be obtained in this way. The detailed description is to be understood as merely illustrative and not restrictive

100‧‧‧Biometric device

10,12,14‧‧‧substrate

16‧‧‧ boards

18‧‧‧Soft circuit board

20‧‧‧Switch circuit layer

22‧‧‧Selection switch

23‧‧‧Signal switch

24‧‧‧Wiring

30‧‧‧First insulation

32‧‧‧Second insulation

34‧‧‧ Third insulation

40‧‧‧Reflecting shielding electrode layer

42‧‧‧reflection shielding electrode

50‧‧‧Multifunctional electrode layer

52‧‧‧Induction electrodes

54‧‧‧ deflection electrode

56‧‧‧Suppression electrode

55, 57‧ ‧ gap

60‧‧‧Protective layer

70‧‧‧Induction detection circuit

72‧‧‧Biometric sensor

720‧‧‧Biometric detection unit

722‧‧‧Detection signal generator

74A‧‧‧First signal processing circuit

74B‧‧‧second signal processing circuit

76‧‧‧Reference signal source

80,82,84‧‧‧through holes

90‧‧‧shading electrode layer

1A is a top view of a multi-function electrode layer of the biometric identification device.

FIG. 1B is a top view of another exemplary multi-function electrode layer of the biometric identification device.

FIG. 2A is a schematic diagram showing the sensing operation of the present biometric identification device. FIG.

FIG. 2B is a schematic diagram showing another example sensing operation of the present invention.

Figure 3A is a side view of the creative biometric device.

FIG. 3B is a schematic view showing the action of the reflective electrode layer of the present invention.

Figure 3C is a detailed side view of the creative biometric device.

Figure 3D is a side view of the components of the inventive biometric device.

4A is a side view of another embodiment of the inventive biometric device.

Figure 4B is a detailed side view of the embodiment of Figure 4A.

Figure 5A is a side elevational view of another embodiment of the inventive biometric device.

Figure 5B is a detailed side view of the embodiment of Figure 5A.

6A is a detailed side view of another embodiment of the creative biometric device.

6B is a detailed side view of another embodiment of the inventive biometric device.

6C is a detailed side view of another embodiment of the creative biometric device.

Figure 7A is a side elevational view of another embodiment of the inventive biometric device.

7B is a side view of another embodiment of the creative biometric device.

7C is a side view of another embodiment of the creative biometric device.

FIG. 8A is a schematic diagram of sensing operation of the creative biometric device.

FIG. 8B is another schematic diagram of the sensing operation of the creative biometric device.

The technical content and detailed description of the present invention are described below with reference to the following drawings: Please refer to FIG. 1A for a top view of the multifunctional electrode layer 50 of the present biometric identification device 100. The multifunctional electrode layer 50 of the present invention has a plurality of sensing electrodes. 52, a plurality of deflection electrodes 54 and at least one suppression electrode 56. Each of the sensing electrodes 52 is surrounded by at least a portion of the corresponding deflecting electrode 54. Each of the deflecting electrodes 54 is surrounded by at least a portion of the suppressing electrode 56 to enhance the sensitivity of the sensing and the signal to noise ratio. As shown in FIG. 1A, the deflecting electrode 54 at least partially surrounds (eg, can completely surround) each of the sensing electrodes 52 and is electrically isolated from the sensing electrodes 52. The sensing electrode 52 shown in FIG. 1A is square, and the corresponding deflecting electrode 54 also defines a corresponding square gap 55. Further, the suppressing electrode 56 also has a corresponding square gap 57 to surround the corresponding deflecting electrode 54. Furthermore, the sensing electrode 52 can also have other shapes, such as the circular shape shown in FIG. 1B, and the deflecting electrode 54 also has a corresponding circular gap 55, and the suppressing electrode 56 also has Corresponding circular gap 57. In addition to the above examples, the shape of the sensing electrode 52 can be other geometric shapes, such as triangles, squares, rectangles, diamonds, or polygons.

Referring to FIG. 2A, in order to illustrate the sensing operation of the present biometric device, a plurality of sensing electrodes 52-1~52-n are electrically connected to a plurality of selection switches 22-1~22-n via a plurality of traces 24, respectively. Then, it is electrically connected to the biometric controller 70 via a trace; the inductive detection circuit 70 is preferably a self-capacitance detection circuit. Most of the deflection electrodes 54-1 to 54-n are electrically connected to the inductive detection circuit 70 via the trace 24. A suppression electrode 56 is electrically connected to a selection switch 22-S by a trace, and is electrically connected to the inductive detection circuit 70 via a trace. The inductive detection circuit 70 has a biometric detector 72, a first signal processing circuit 74A (eg, a non-inverting amplifier) and a second signal processing circuit 74B (eg, an inverting amplifier). The biometric sensor 72 has a biometric sensing unit 720 and a sensing signal generator 722. The inductive detection circuit 70 can control the selection switch 22 to select one of the plurality of sensing electrodes 52 (for example, the sensing electrode 52-2 shown in FIG. 2A), and the detecting signal generator 722 generates a periodic or aperiodic sensing signal. (for example, a fingerprint sensing signal) S1 and transmitting the signal to the corresponding sensing electrode 52-2 via the selection switch 22-2; the biometric detecting unit 720 receives the sensing signal S1' returned by the sensing electrode 52-2, At the same time, the sensing signal S1' is processed by the first signal processing circuit 74A (for example, a non-inverting amplifier) to become a bias signal S2, and the deflection signal S2 is transmitted to all of the deflection electrodes 54-1 to 54-n. According to an embodiment, the sensing signal S1' is processed by the second signal processing circuit 74B (for example, an inverting amplifier) to become a suppression signal S3, and the suppression signal S3 is transmitted to the suppression electrode 56, and thus, is selected. The sensing signal generated on the sensing electrode 52-2 is S1', and all the deflection electrodes 54-1~54-n receive the bias signal S2, and the two signals can be, for example, in-phase signals (for example, all positive signals). The suppression electrode 56 receives the suppression signal S3 (for example, a negative signal) which is an inverted signal. Referring to the function diagram of the multifunctional electrode layer shown in FIG. 3B, if a positive potential signal is applied to the sensing electrode 52, a positive potential signal is applied to the deflection electrode 54, and a negative potential signal is applied to the suppression electrode 56, Make The power line is concentrated on the upper surface of the sensing electrode 52 (corresponding to the contact position of the user's finger), and the interference of the electric field above the surrounding suppression electrode on the sensing electrode 52 is reduced, and the sensing sensitivity and the signal noise ratio can be improved. In addition, the detection signal generator 722 can also generate periodic signals, aperiodic signals, symmetric or asymmetric signals. The periodic signal is, for example, a sine wave, a square wave or a triangular wave.

In addition, according to another embodiment, the suppression electrode 56 receives a predetermined level signal S4 (for example, a signal lower than the sensing signal S1' level) outputted by the reference signal source 76 via the selection switch 22-S3; The level signal S4 can be a positive level signal, a negative level signal, a zero level signal or an alternating signal. Similarly, the sensing signal S1' is processed by the first signal processing circuit 74A (e.g., a non-inverting amplifier) to become a biasing signal S2, and the biasing signal S2 is transmitted to all of the deflecting electrodes 54-1 to 54-n. Therefore, the selected sensing electrode 52-2 and all of the biasing electrodes 54-1 to 54-n receive the in-phase signals (for example, both are large positive signals), and the suppression electrode 56 receives the smaller positive signals. Referring to the function diagram of the multi-function electrode layer shown in FIG. 3B, if a large positive signal is applied to the sensing electrode 52 and the deflection electrode 54, and a small positive signal is added to the suppression electrode 56, the power line is also made. Concentrating on the upper surface of the sensing electrode 52 (corresponding to the user's finger contact position) can improve the sensing sensitivity and signal noise ratio. In addition, the inductive detection circuit 70 can also selectively supply the predetermined level signal S4 to all (or selected) sensing electrodes 52 via the selection switches 22-S1 22 22-S3, and to the deflection electrodes 54 and The electrode 56 is suppressed, wherein the predetermined level signal S4 can be a zero potential, a positive potential, a negative potential, or an alternating signal.

FIG. 2B is a schematic diagram showing another example sensing operation of the present invention. The example of this figure is similar to that of FIG. 2A. Each of the sensing electrodes 52-1~52-n has a corresponding selection switch 22A-1~22A-n (the first group of selection switches), but each deflection electrode 54-1~ 54-n has corresponding selection switches 22B-1 to 22B-n (second group selection switches). Similarly, the inductive detection circuit 70 (also referred to as a biometric device controller) can control the selection switch 22 to select one of the plurality of sensing electrodes 52 (eg, the sensing electrode 52-2 shown in FIG. 2B) and a majority of the biases. One of the electrodes 54 (for example, the deflecting electrode 54-2 shown in FIG. 2B), and the detecting signal generator 722 generates a periodic or aperiodic sensing signal. (for example, a fingerprint sensing signal) S1 and transmitting the signal to the corresponding sensing electrode 52-2 via the selection switch 22-2; the biometric detecting unit 720 receives the sensing signal S1' returned by the sensing electrode 52-2, At the same time, the sensing signal S1' is processed by the first signal processing circuit 74A (for example, a non-inverting amplifier) to become a bias signal S2, and the bias signal S2 is transmitted to the corresponding deflecting electrode 54-2 via the selection switch 22B-2. According to an embodiment, the sensing signal S1' is processed by the second signal processing circuit 74B (for example, an inverting amplifier) to become a suppression signal S3 and the suppression signal S3 is transmitted to the suppression electrode 56. Therefore, the selected sensing is performed. The sensing signal generated on the electrode 52-2 is S1', and the corresponding deflection electrode 54-2 receives the bias signal S2, and the two signals can be, for example, in-phase signals (for example, all positive signals), and the suppression electrode 56 is The suppression signal S3 (for example, a negative signal) is received as an inverted signal. Referring to the function diagram of the multifunctional electrode layer shown in FIG. 3B, if a positive potential signal is applied to the sensing electrode 52, a positive potential signal is applied to the deflection electrode 54, and a negative potential signal is applied to the suppression electrode 56, Concentrating the power line on the upper surface of the sensing electrode 52 (corresponding to the user's finger contact position) can improve the sensing sensitivity and signal noise ratio. In addition, the detection signal generator 722 can also generate periodic signals, aperiodic signals, symmetric or asymmetric signals. The periodic signal is, for example, a sine wave, a square wave or a triangular wave.

In addition, according to another embodiment, the suppression electrode 56 receives a predetermined level signal S4 (for example, a signal lower than the level of the sensing signal S1') outputted by the reference signal source 76 via the selection switch 22-S3. Similarly, the sensing signal S1' is processed by the first signal processing circuit 74A (e.g., a non-inverting amplifier) to become a biasing signal S2 and transmitted to the selected deflection electrode 54-2. Therefore, the selected sensing electrode 52-2 and the selected biasing electrode 54-2 receive the in-phase signals (for example, both are large positive signals), and the suppression electrode 56 receives the smaller positive signals. Referring to the function diagram of the multi-function electrode layer shown in FIG. 3B, if a large positive signal is applied to the sensing electrode 52 and the deflection electrode 54, and a small positive signal is added to the suppression electrode 56, the power line is also made. The focus is on the upper surface of the sensing electrode 52 (corresponding to the position of the user's finger contact), and at the same time, the interference of the electric field above the surrounding suppression electrode on the sensing electrode 52 is reduced, and the sensing sensitivity and the signal noise ratio can be improved. In addition, the inductive detection circuit 70 can also be opened via selection. The off-level signal S4 is selectively supplied to all (or selected) of the sensing electrode 52 and the deflecting electrode 54 and to the suppressing electrode 56, wherein the predetermined level signal S4 can be turned off by 22-S1~22-S3. Zero potential, positive potential, negative potential, or alternating signal.

3A-3D are respectively a side view of the creative biometric device, a schematic diagram of the function of the multifunctional electrode layer, a detailed side view of the creative biometric device, and a side view of the components. As shown in FIG. 3A, the biometric device 100 according to the present invention has a substrate 10, a switch circuit layer 20, a first insulating layer 30, a multi-function electrode layer 50 and a protective layer arranged from bottom to top. 60. Moreover, in the multi-layer structure, the switch circuit layer 20 has a plurality of select switches 22 and a plurality of traces 24; the multi-function electrode layer 50 may have a plurality of bits on the same plane as shown in FIG. 1A or FIG. 1B. The sensing electrode 52, the plurality of deflection electrodes 54 and the at least one suppression electrode 56. Since the switch circuit layer 20 and the multi-function electrode layer 50 have metal traces and electrodes thereon, a first insulating layer 30 is required to be isolated from each other. Referring to FIG. 3C, the switch circuit layer 20 on the substrate 10 has a plurality of select switches 22 and a plurality of traces 24, and the traces are electrically connected to the corresponding sense electrodes 52 and deflection electrodes 54 via via holes 80. And the suppression electrode 56, the induction electrode 52, the deflection electrode 54, and the suppression electrode 56 can be electrically connected to the corresponding selection switch 22. As shown in FIG. 3D, the selection switch 22 can be, for example, a thin film transistor (TFT) switch 22, and is electrically connected to the corresponding sensing electrode 52 via the trace 24 and the via 80. Similarly, although not specifically illustrated, the deflection electrode 54 is electrically connected to the corresponding trace via the via 80 and electrically connected to the corresponding TFT select switch 22 via the corresponding trace. Similarly, the suppression electrode 56 is also electrically connected to the corresponding trace via the via 80, and is electrically connected to the corresponding TFT select switch 22 via the corresponding trace. In the biometric device 100 illustrated in Figures 3A-3D, the protective layer 60 provides protection against oxidation, moisture, and scratches.

In the example shown in FIGS. 3A-3D, the substrate 10 is a compound substrate of glass, polymer film material, metal, tantalum or niobium. Specifically, the metal substrate is stainless steel, aluminum, copper, iron, silver, tin, tungsten or the alloy described above. The sensing electrode 52, the deflecting electrode 54, and the suppressing electrode 56 are made of a transparent conductive material or an opaque conductive material. The transparent conductive material is indium tin oxide (indium tin oxide, ITO), zinc tin oxide (ZTO), zinc oxide (ZnO), gallium zinc oxide (GZO) conductive polymer, carbon nanotube, graphene, or silver film having a thickness of less than 50 nm. Wherein, the opaque conductive material is composed of chromium, bismuth, molybdenum, aluminum, silver, copper, titanium, nickel, ruthenium, cobalt, tungsten, magnesium, calcium, potassium, lithium, indium or the foregoing alloy or lithium fluoride and aluminum. a composition of magnesium fluoride and aluminum or a composition of lithium oxide and aluminum.

4A is a side view of another example of the present invention, and FIG. 4B is a detailed side view corresponding to FIG. 4A. The examples shown in these illustrations are similar to the example shown in Figure 3A, so similar components are similarly numbered. The biometric device 100 shown in FIG. 4A additionally includes a reflective shielding electrode layer 40 between the switching circuit layer 20 and the multi-function electrode layer 50 for providing the wiring and better shielding noise of the sensing electrodes. Interference function. In order to provide electrical insulation between the switching circuit layer 20, the reflective shielding electrode layer 40 and the multi-function electrode layer 50, there is a first insulating layer 30 between the switching circuit layer 20 and the reflective shielding electrode layer 40; and a reflective shielding electrode layer There is a second insulating layer 32 between the 40 and the multi-function electrode layer 50. Furthermore, as shown in FIG. 4B, the sensing electrode 52, the deflecting electrode 54 and the suppressing electrode 56 on the multi-function electrode layer 50 are electrically connected to the selection switch on the switch circuit layer 20 through the respective via holes 80, respectively. 22 and the line 24 (not shown). In addition, the reflective shielding electrode 42 of the reflective shielding electrode layer 40 is also electrically connected to the selection switch 22 and the trace 24 (not shown) on the switch circuit layer 20 via the via 82.

Fig. 5A is a side view showing another example of the present invention, and Fig. 5B is a detailed side view corresponding to Fig. 5A. The examples shown in these figures are similar to the example shown in Figure 4A, so similar components are similarly numbered. The biometric device 100 shown in FIG. 5A additionally includes a shielding electrode layer 90 between the switching circuit layer 20 and the reflective shielding electrode layer 40 for providing the traces and the shielding electrodes for better shielding noise interference. Features. In addition, in order to provide electrical insulation between the switching circuit layer 20, the shielding electrode layer 90, the reflective shielding electrode layer 40, and the multi-function electrode layer 50, there are three insulating layers 30, 32 between the four circuit layers/electrode layers. , 34 to provide electrical insulation. As shown in FIG. 5B, the sensing electrode 52, the deflecting electrode 54 and the suppressing electrode 56 on the multi-function electrode layer 50 are electrically connected to the selection switch 22 on the switch circuit layer 20 through the respective via holes 80, respectively. Line 24 (not shown). In addition, the opposite of the reflective shielding electrode layer 40 The shielding electrode 42 is also electrically connected to the selection switch 22 and the trace 24 (not shown) on the switch circuit layer 20 through the via 82. The shield electrode 92 of the shield electrode layer 90 is also electrically connected by the via 84. The switch 22 and the trace 24 (not shown) are connected to the switch circuit layer 20.

Figure 6A is a side elevational view of another embodiment of the inventive biometric device. The biometric device shown in Fig. 6A is similar to the example shown in Fig. 3A, and thus similar components are similarly numbered. Compared with the example shown in FIG. 3A, the protective layer 60 of the biometric device shown in FIG. 6A is on the lowermost side of the device, and the substrate 10 is on the uppermost side of the device, and the substrate 10 is preferably a glass substrate. To achieve a scratch-resistant effect. In addition, since the protective layer 60 does not need to have a scratch-proof effect, the material selectivity thereof is relatively wide. For example, the protective layer 60 can also be an extension of other device substrates.

The biometric device 100 shown in FIG. 6B is similar to the example shown in FIG. 3A, and the substrate is a metal substrate 12 such as a substrate of stainless steel, aluminum, copper, iron, silver, tin, tungsten or the foregoing alloy. Furthermore, the inductive detection circuit 70 can be in the form of an integrated circuit chip, and the integrated circuit chip is bonded or pressure bonded to the substrate 12. As shown in FIG. 6B, the inductive detection circuit 70 in the form of an integrated circuit chip can also be bonded or soldered to a circuit board 16 and routed through the circuit of a flexible circuit board 18 to the substrate 12. Electrical connections. In this example, the selection switch 22 can be, for example, a thin film transistor switch 22 and grown on the metal substrate 12.

The biometric device 100 shown in FIG. 6C is similar to the example shown in FIG. 3A, and the substrate is a enamel substrate 14, and in the switch circuit layer 20, an integrated circuit fabrication technique can be used to separately produce the sensing as shown in FIG. 3A. The circuit of the detecting circuit 70 is such that the biometric device 100 as a whole can be ICized. Furthermore, the protective layer 60 can be, for example, an integrated circuit packaging material such as a ceramic or sapphire packaging material. Moreover, in this example, the selection switch 22 can be, for example, a field effect transistor switch 22 and grow on the enamel substrate 14.

7A-7C are side views of other embodiments of the inventive biometric device. The biometric device 100 of Fig. 7A is similar to the example shown in Fig. 3A, and thus similar components are similarly numbered. In the picture In 7A, a reflective shield electrode may be additionally provided in the excess space of the switch circuit layer 20' to provide better electromagnetic shielding effect on the upper side sensing electrode and the trace.

7B is a side view of another embodiment of the biometric identification device. The example is similar to the example of FIG. 7A. However, the protective layer 60 of the biometric device is on the lowermost side of the device, and the substrate 10 is at the top of the device. The side, and the substrate 10 is preferably a glass substrate to achieve a scratch-resistant effect. The substrate of this embodiment is also suitable for the polymer film material, and the back surface of the substrate is adhered to the protective glass of the touch display panel. In addition, since the protective layer 60 does not need to have a scratch-proof effect, the material selectivity thereof is relatively wide. For example, the protective layer 60 can also be an extension of other device substrates.

7C is a side view of another embodiment of the biometric identification device, which is similar to the example of FIG. 7A, wherein the substrate is a metal substrate 12, such as stainless steel, aluminum, copper, iron, silver, tin, tungsten or the foregoing. The substrate of the alloy. The metal substrate 12 can be electrically connected to another integrated circuit via a flexible circuit board, such as the inductive detection circuit 70 shown in FIG. 3A.

FIG. 8A is a schematic diagram of the sensing operation of the biometric device 100. The biometric device 100 can be, for example, the biometric device 100 shown in FIG. 2A. That is, the deflecting electrode 54 receives the biasing signal S2, and the plurality of sensing electrodes 52. The sensing signal S1 is selectively received via the corresponding selection switch 22.

FIG. 8B is another schematic diagram of the sensing operation of the biometric identification device. The biometric device 100 can be, for example, the biometric device 100 shown in FIG. 2B, that is, the majority of the deflecting electrodes 54 are selected via the corresponding second group. The switch 22B and the signal switching switch 23 receive the bias signal S2 or the predetermined level signal S4, and the plurality of sensing electrodes 52 selectively receive the sensing signal S1 via the corresponding first group selection switch 22A. The bias signal S2 can be generated, for example, by the first signal processing circuit 74A (for example, a non-inverting amplifier) shown in FIG. 2B; and the predetermined level signal S4 can be, for example, a predetermined bit output by the reference signal source 76 shown in FIG. 2B. Quasi-signal S4.

In summary, this creation can achieve the following effects:

1. Since there is a biasing electrode electrically insulated from the outside of the sensing electrode, and a suppressing electrode electrically isolated from the outside of the deflecting electrode, and a suitable biasing signal is applied to the deflecting electrode, the sensing sensitivity and the signal noise ratio are improved. The sensing distance between the sensing electrode and the fingerprint can be increased as much as possible.

2. If the sensing signal, the deflection signal, and the suppression signal are applied to the sensing electrode, the deflection electrode and the suppression electrode, not only the power line is concentrated on the upper surface of the sensing electrode (corresponding to the contact position of the user's finger), and the outer side of the sensing electrode is suppressed. The electric field interferes with the sensing electrode, which can improve the sensing sensitivity and signal noise ratio.

3. The sensing electrode of the present invention can be implemented not only in an integrated circuit but also on a substrate other than the integrated circuit (for example, a substrate such as a metal, a polymer film, or a glass) to significantly reduce the wafer area and effectively reduce the area. manufacturing cost.

However, the above description is only for the detailed description and the drawings of the preferred embodiments of the present invention, but the features of the present invention are not limited thereto, and are not intended to limit the creation. All the scope of the creation should be as follows. The scope of patents shall prevail, and all embodiments that incorporate the spirit of the patent application scope and similar changes shall be included in the scope of this creation. Anyone familiar with the art may easily think of it in the field of this creation. Variations or modifications may be covered by the patents in this case below.

10‧‧‧Substrate

20‧‧‧Switch circuit layer

22‧‧‧Selection switch

24‧‧‧Wiring

30‧‧‧First insulation

50‧‧‧Multifunctional electrode layer

52‧‧‧Induction electrodes

54‧‧‧ deflection electrode

55‧‧‧ gap

56‧‧‧Suppression electrode

57‧‧‧ gap

60‧‧‧Protective layer

80‧‧‧through hole

Claims (15)

A biometric device comprising: a substrate; a multi-function electrode layer disposed on one side of the substrate, the multi-function electrode layer comprising a plurality of sensing electrodes, a plurality of deflecting electrodes and at least one suppressing electrode; wherein each of the sensing electrodes is The corresponding deflection electrodes are at least partially surrounded, each of the deflection electrodes is surrounded by at least a portion of the suppression electrodes, and a switching circuit layer includes a plurality of selection switches and a plurality of traces, at least a part of the selection switches and The line is electrically connected to the corresponding sensing electrode; at least one of the biasing electrodes receives a biasing signal. The biometric device of claim 1, further comprising an insulating layer disposed on a side of the switch circuit layer facing the multi-function electrode layer. The biometric device of claim 2, further comprising a reflective shielding electrode layer disposed between the multifunctional electrode layer and the switching circuit layer; the reflective shielding electrode layer comprising at least one reflective shielding electrode. The biometric device of claim 3 further comprising another insulating layer disposed on a side of the reflective shielding electrode layer facing the multifunctional electrode layer. For example, in the biometric device of claim 1, the selection open relationships are divided into a plurality of selection switch groups; each of the selection switch groups corresponds to at least one sensing electrode. The biometric device of claim 5, wherein each of the plurality of traces is electrically connected to the at least one selection switch group. The biometric device of claim 1, wherein the selection switches are field effect transistors. The biometric device of claim 7, wherein the field effect crystal system is disposed on the substrate. The biometric device of claim 7, further comprising an inductive detection circuit and the circuit is formed on the substrate. The biometric device of claim 1, wherein the selection switches are thin film transistors. The biometric device of claim 10, wherein the thin film electro-crystal system is disposed on the substrate. The biometric device of claim 1, further comprising an inductive detection circuit of the integrated circuit chip, and the integrated circuit chip is bonded or pressure bonded to the substrate. The biometric device of claim 1, further comprising an inductive detection circuit of the integrated circuit chip, the integrated circuit is bonded or pressure welded to a circuit board, and the circuit is routed through the circuit board of the flexible circuit board The plurality of wires are electrically connected. The biometric device of claim 1, wherein the substrate is a compound of glass, polymeric film material, metal, ruthenium or osmium. The biometric device of claim 1, further comprising an inductive detection circuit, wherein the inductive detection circuit sends the bias signal to the deflection electrode.