TWM505701U - Solar cell - Google Patents

Solar cell Download PDF

Info

Publication number
TWM505701U
TWM505701U TW103222576U TW103222576U TWM505701U TW M505701 U TWM505701 U TW M505701U TW 103222576 U TW103222576 U TW 103222576U TW 103222576 U TW103222576 U TW 103222576U TW M505701 U TWM505701 U TW M505701U
Authority
TW
Taiwan
Prior art keywords
solar cell
bus electrode
conductive layer
semiconductor substrate
backside
Prior art date
Application number
TW103222576U
Other languages
Chinese (zh)
Inventor
Sheng-Che Huang
Jen-Ho Kang
Yu-Hui Liu
ying-quan Wang
Original Assignee
Tsec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tsec Corp filed Critical Tsec Corp
Priority to TW103222576U priority Critical patent/TWM505701U/en
Publication of TWM505701U publication Critical patent/TWM505701U/en

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

A solar cell includes a semiconductor substrate, a backside busbar and a conductive layer. The backside busbar is disposed on the back surface of the semiconductor substrate and includes two opposite sides. The conductive layer is disposed on the back surface of the semiconductor substrate and covers portions of the backside busbar. The two sides of the backside busbar are exposed from the conductive layer.

Description

太陽能電池Solar battery

本創作係關於太陽能電池的領域,特別是關於一種太陽能電池背面匯流電極以及週邊導電層設計佈局的結構改良。This creation is about the field of solar cells, especially regarding the structural improvement of a solar cell backside bus electrode and a peripheral conductive layer design layout.

隨著消耗性能源日益枯竭,太陽能等替代能源的開發早已成為重要之發展方向。太陽能電池(Solar cell)的工作原理係利用太陽光的輻射能源與半導體材料作用來產生電能。太陽能電池的主要材料包括有半導體基板以及導電膠,其中,半導體基板主要包括矽基板以及III-V族化合物半導體基板等,而導電膠包括銀膠或鋁膠。銀膠主要係用於形成太陽能電池之正面和背面匯流電極,且鋁膠則會設置於背面匯流的週邊。With the depletion of consumable energy, the development of alternative energy sources such as solar energy has long been an important development direction. Solar cells work by using the radiant energy of sunlight and semiconductor materials to generate electricity. The main material of the solar cell includes a semiconductor substrate and a conductive paste. The semiconductor substrate mainly includes a germanium substrate and a III-V compound semiconductor substrate, and the conductive paste includes silver paste or aluminum paste. Silver glue is mainly used to form the front and back bus electrodes of the solar cell, and the aluminum glue is placed on the periphery of the back side.

一般而言,在形成太陽能電池的背面匯流電極之後,會進一步於太陽能電池的背面網印一層鋁膠,鋁膠會些許地重疊背面匯流電極的邊緣。之後,可以再施行燒結製程,將鋁膠燒結成導電層,並使半導體基板與鋁膠反應而生成共晶金屬層。對於太陽能電池的成品而言,此共晶金屬層可以在鄰近的半導體基板內產生背面電場(back side field,BSF),以降低少數載子在半導體基板背面的表面復合機率。之後,可以採用焊接的方式,利用連續的條狀焊帶以相連成串排列的太陽能電池,而獲得所需的太陽能模組。In general, after forming the back side bus electrode of the solar cell, a layer of aluminum glue is further printed on the back side of the solar cell, and the aluminum glue slightly overlaps the edge of the back side bus electrode. Thereafter, a sintering process may be further performed to sinter the aluminum paste into a conductive layer, and react the semiconductor substrate with the aluminum paste to form a eutectic metal layer. For the finished product of the solar cell, the eutectic metal layer can generate a back side field (BSF) in the adjacent semiconductor substrate to reduce the surface composite probability of a minority carrier on the back surface of the semiconductor substrate. Thereafter, the desired solar module can be obtained by soldering using a continuous strip of solder ribbon to connect the solar cells in a series.

然而,上述太陽能電池的結構仍有待改善的問題。舉例來說,由於背面匯流電極和導電層間的重疊處和兩者間的非重疊處彼此之間具有相對 的高度差,在後續焊接太陽能電池的過程中,此高度差會使得重疊處內和重疊處外的半導體基板承受不同的焊接下壓力,因而造成太陽能電池的破片。However, the structure of the above solar cell still has a problem to be improved. For example, since the overlap between the backside bus electrode and the conductive layer and the non-overlap between the two have a relative relationship with each other The height difference is such that during the subsequent soldering of the solar cell, the height difference causes the semiconductor substrate outside the overlap and the overlap to withstand different soldering down pressures, thereby causing fragmentation of the solar cell.

因此,仍需要提出一種改良的太陽能電池結構,以解決上述先前技藝的不足與缺點。Accordingly, there is still a need to provide an improved solar cell structure that addresses the deficiencies and shortcomings of the prior art described above.

有鑑於此,本創作係提出一種改良的太陽能電池,以解決上述習知的太陽能電池的不足與缺點。In view of this, the present invention proposes an improved solar cell to solve the shortcomings and disadvantages of the above-mentioned conventional solar cells.

根據本創作之一實施例,係提供一種太陽能電池。太陽能電池包括半導體基板、背面匯流電極以及導電層。其中,背面匯流電極係設置在半導體基板的背面上且包括相對設置的二側邊。導電層係設置在半導體基板的背面上且覆蓋住部份背面匯流電極,致使背面匯流電極的相對設置的側邊會被暴露出於導電層之外。According to an embodiment of the present invention, a solar cell is provided. The solar cell includes a semiconductor substrate, a back side bus electrode, and a conductive layer. Wherein, the back side bus electrode is disposed on the back surface of the semiconductor substrate and includes two opposite sides. The conductive layer is disposed on the back surface of the semiconductor substrate and covers a portion of the back surface bus electrode such that oppositely disposed sides of the back side bus electrode are exposed outside the conductive layer.

為讓本創作之上述目的、特徵及優點能更明顯易懂,下文特舉較佳實施方式,並配合所附圖式,作詳細說明如下。然而如下之較佳實施方式與圖式僅供參考與說明用,並非用來對本創作加以限制者。The above described objects, features and advantages of the present invention will become more apparent from the following description. However, the following preferred embodiments and drawings are for illustrative purposes only and are not intended to limit the present invention.

100、100’‧‧‧太陽能電池100, 100’‧‧‧ solar cells

102‧‧‧半導體基板102‧‧‧Semiconductor substrate

102a‧‧‧受光背面102a‧‧‧Received back

102b‧‧‧受光正面102b‧‧‧lighted front

104‧‧‧導電層104‧‧‧ Conductive layer

106‧‧‧背面匯流電極106‧‧‧Backside bus electrode

106’‧‧‧次匯流電極106’‧‧‧th sink electrodes

108‧‧‧重疊區域108‧‧‧Overlapping areas

110‧‧‧摻雜區110‧‧‧Doped area

112‧‧‧正面匯流電極112‧‧‧ Positive Convergence Electrode

114‧‧‧保護介電層114‧‧‧Protective dielectric layer

120‧‧‧焊帶120‧‧‧ soldering tape

122‧‧‧焊接材料122‧‧‧Welding materials

1061、1062、1063、1064‧‧‧側邊1061, 1062, 1063, 1064‧‧‧ side

1061’、1062’‧‧‧側邊1061’, 1062’‧‧‧ side

△H‧‧‧高度差△H‧‧‧ height difference

X‧‧‧長軸方向X‧‧‧ long axis direction

Y‧‧‧短軸方向Y‧‧‧Short axis direction

第1圖是本創作第一實施例太陽能電池的背面結構示意圖。Fig. 1 is a schematic view showing the structure of the back surface of the solar cell of the first embodiment of the present invention.

第2圖是本創作第一實施例沿著第1圖A-A’切線所繪示的太陽能電池的剖面示意圖。Fig. 2 is a schematic cross-sectional view showing the solar cell of the first embodiment of the present invention taken along the line A-A' of Fig. 1.

第3圖是本創作第一實施例設置有焊帶的太陽能電池的背面結構示意圖。Fig. 3 is a schematic view showing the back structure of a solar cell provided with a solder ribbon in the first embodiment of the present invention.

第4圖是本創作第一實施例沿著第3圖B-B’切線所繪示的太陽能電池的剖面示意圖。Fig. 4 is a schematic cross-sectional view showing the solar cell of the first embodiment of the present invention taken along the line B-B' of Fig. 3.

第5圖是本創作第二實施例太陽能電池的背面結構示意圖。Fig. 5 is a schematic view showing the structure of the back surface of the solar cell of the second embodiment of the present invention.

第6圖是本創作第二實施例沿著第5圖C-C’切線所繪示的太陽能電池的剖面示意圖。Fig. 6 is a schematic cross-sectional view showing the solar cell of the second embodiment of the present invention taken along line C-C' of Fig. 5.

於下文中,係加以陳述本創作之太陽能電池結構,俾使本技術領域中具有通常技術者可據以實施本創作。該些具體實施方式可參考相對應的圖式,俾使該些圖式構成實施方式之一部分。雖然本創作之實施例揭露如下,然而其並非用以限定本創作,任何熟習此技藝者,在不脫離本創作之精神和範疇內,當可作些許之更動與潤飾。In the following, the solar cell structure of the present invention is set forth so that those skilled in the art can implement the present invention. The specific embodiments may be referred to the corresponding drawings, and the drawings may form part of the embodiments. Although the embodiments of the present invention are disclosed as follows, they are not intended to limit the present invention, and those skilled in the art can make some changes and refinements without departing from the spirit and scope of the present invention.

第1圖是本創作第一實施例太陽能電池的背面結構示意圖。太陽能電池100包括半導體基板102、背面匯流電極106以及導電層104。其中,背面匯流電極106可以成對地平行設置在半導體基板102的受光背面102a上。各背面匯流電極106可呈現條狀,其可以包括沿著長軸方向X相對設置的二側邊1061、1062,以及沿著短軸方向Y相對設置的二側邊1063、1064。換言之,側邊1061、1062會垂直於長軸方向X,而側邊1063、10642會垂直於短軸方向Y。導電層104係設置在半導體基板102的背面上且覆蓋住部份背面匯流電極106,致使背面匯流電極106的相對設置的側邊1061、1062暴露出於導電層104之外。相較之下,背面匯流電極106的其他側邊1063、1064會被導電層104覆蓋,致使背面匯流電極106和導電層104間會具有重疊區域108,此重疊區域108和鄰近未被背面匯流電極106覆蓋的導電層104間會具有一高度差。Fig. 1 is a schematic view showing the structure of the back surface of the solar cell of the first embodiment of the present invention. The solar cell 100 includes a semiconductor substrate 102, a back side bus electrode 106, and a conductive layer 104. The back surface bus electrodes 106 may be disposed in parallel on the light receiving back surface 102a of the semiconductor substrate 102 in pairs. Each of the backside bus electrodes 106 may have a strip shape, which may include two side edges 1061, 1062 disposed opposite each other along the major axis direction X, and two side edges 1063, 1064 disposed opposite each other along the minor axis direction Y. In other words, the sides 1061, 1062 will be perpendicular to the major axis direction X, while the sides 1063, 10642 will be perpendicular to the minor axis direction Y. The conductive layer 104 is disposed on the back surface of the semiconductor substrate 102 and covers a portion of the back surface bus electrode 106 such that the oppositely disposed side edges 1061, 1062 of the back surface bus electrode 106 are exposed outside the conductive layer 104. In contrast, the other sides 1063, 1064 of the backside bus electrode 106 are covered by the conductive layer 104 such that there will be an overlap region 108 between the backside bus electrode 106 and the conductive layer 104, the overlap region 108 and the adjacent backside bus electrode. There will be a height difference between the conductive layers 104 covered by 106.

第2圖是沿著第1圖A-A’切線所繪示的太陽能電池的剖面示意 圖。背面匯流電極106的側邊1064會被導電層104覆蓋,因而具有一重疊區域108,且位於重疊區域108內的導電層104與位於該區域外的鄰近導電層104間會具有一高度差△H。相較之下,背面匯流電極106的側邊1061則不會被導電層104覆蓋,致使側邊1061可以被暴露出於導電層104,且兩者具有實質上相等的高度。選擇性地,背面匯流電極106的側邊1061和導電層104可以被進一步分隔,致使兩者之間可以存在有間隙。Figure 2 is a schematic cross-sectional view of the solar cell taken along the line A-A' of Figure 1 Figure. The side 1064 of the backside bus electrode 106 is covered by the conductive layer 104 and thus has an overlap region 108, and the conductive layer 104 located in the overlap region 108 and the adjacent conductive layer 104 outside the region have a height difference ΔH. . In contrast, the side 1061 of the backside bus electrode 106 is not covered by the conductive layer 104, such that the side 1061 can be exposed to the conductive layer 104, and both have substantially equal heights. Alternatively, the side 1061 of the backside bus electrode 106 and the conductive layer 104 may be further separated such that there may be a gap therebetween.

除上述的部件之外,太陽能電池100另可包括摻雜區110、正面匯流電極112、保護介電層114和共晶合金層(圖未示)。其中,摻雜區110係設置於太陽能電池100的半導體基板102內,且其導電型會相異於半導體基板102的導電型,以在兩者間會產生PN接面。正面匯流電極112係設置在太陽能電池100的受光正面102b上。保護介電層114會設置在受光正面102b上,且設置於正面匯流電極112和半導體基板102之間。共晶合金層可以位在導電層104正下方的半導體基板102內,以提供背面電場。較佳來說,共晶合金層內的金屬原子會相同於導電層104內的金屬原子,例如鋁原子,但不限於此。In addition to the components described above, the solar cell 100 may further include a doping region 110, a front side bus electrode 112, a protective dielectric layer 114, and a eutectic alloy layer (not shown). The doped region 110 is disposed in the semiconductor substrate 102 of the solar cell 100, and its conductivity type is different from that of the semiconductor substrate 102 to generate a PN junction therebetween. The front bus electrode 112 is disposed on the light receiving front surface 102b of the solar cell 100. The protective dielectric layer 114 is disposed on the light receiving front surface 102b and disposed between the front surface bus electrode 112 and the semiconductor substrate 102. The eutectic alloy layer can be positioned within the semiconductor substrate 102 directly beneath the conductive layer 104 to provide a back surface electric field. Preferably, the metal atoms in the eutectic alloy layer are the same as the metal atoms in the conductive layer 104, such as aluminum atoms, but are not limited thereto.

其中,上述半導體基板102可包括,矽基板或III-V族化合物半導體基板例如。上述匯流電極106、112的組成包括低阻值之導電材料,例如銅、銀、鋁等元素或化合物,較佳為選用銀作為電極,且匯流電極106、112可透過網印、噴墨印刷、印花轉印(decal transfer)、電鍍(plating)、無電鍍(electroless plating)等製程而形成,且較佳以網印之方式形成,但不限於此。上述導電層104的組成包括低阻值的金屬,且較佳包括鋁,且形成導電層104的方式可包括網印、噴墨印刷、印花轉印、電鍍、無電鍍,但不限於此。上述保護介電層114之組成包括氧化矽、氮化矽或二氧化鈦,且形成保護介電層114的製程可包括化學氣相沉積(chemical vapor deposition,CVD)、低壓化學蒸氣 沉積(low pressure CVD,LPCVD)、電漿增強化學氣相沉積(plasma enhanced CVD,PECVD)、噴塗熱解、旋轉塗佈、網印或是其他的沉積技術。The semiconductor substrate 102 may include a germanium substrate or a III-V compound semiconductor substrate, for example. The composition of the bus electrodes 106, 112 includes a low-resistance conductive material, such as an element or a compound of copper, silver, aluminum, etc., preferably silver is used as an electrode, and the bus electrodes 106, 112 can be screen printed, inkjet printed, It is formed by processes such as decal transfer, plating, and electroless plating, and is preferably formed by screen printing, but is not limited thereto. The composition of the conductive layer 104 includes a low resistance metal, and preferably includes aluminum, and the manner of forming the conductive layer 104 may include screen printing, inkjet printing, printing transfer, electroplating, electroless plating, but is not limited thereto. The composition of the protective dielectric layer 114 includes hafnium oxide, tantalum nitride or titanium dioxide, and the process of forming the protective dielectric layer 114 may include chemical vapor deposition (CVD), low pressure chemical vapor. Low pressure CVD (LPCVD), plasma enhanced CVD (PECVD), spray pyrolysis, spin coating, screen printing or other deposition techniques.

第3圖是本創作第一實施例設置有焊帶的太陽能電池的背面結構示意圖。第4圖是沿著第3圖B-B’切線所繪示的太陽能電池的剖面示意圖。焊帶120係平行於各背面匯流電極106的長軸方向X設置,且跨過背面匯流電極106的側邊1061、1062。各焊帶120可透過焊接材料122而被焊接於各背面匯流電極106之上,致使兩相鄰的太陽能電池100可以被電連接而構成後續太陽能電池模組的一部分。其中,上述焊帶120可以是鋁等其他低阻值材料的焊帶,而焊接材料122可以是錫球。Fig. 3 is a schematic view showing the back structure of a solar cell provided with a solder ribbon in the first embodiment of the present invention. Fig. 4 is a schematic cross-sectional view showing the solar cell taken along the line B-B' of Fig. 3. The solder ribbon 120 is disposed parallel to the major axis direction X of each of the back surface bus electrodes 106 and spans the side edges 1061, 1062 of the back surface bus electrode 106. Each solder ribbon 120 can be soldered to each of the backside bus electrodes 106 through the solder material 122, so that two adjacent solar cells 100 can be electrically connected to form a part of the subsequent solar cell module. The solder ribbon 120 may be a solder ribbon of other low-resistance materials such as aluminum, and the solder material 122 may be a solder ball.

進一步來說,由於背面匯流電極106的側邊1061、1062不會與導電層104重疊,因此在將沿著長軸方向X延伸的焊帶120焊接至背面匯流電極106的過程中,不會經過導電層104突升或突降的區段。在此情況下,可以穩定半導體基板102在焊接製程中所承受的下壓力大小,因而降低了太陽能電池破碎的機率。Further, since the side edges 1061, 1062 of the back surface bus electrode 106 do not overlap with the conductive layer 104, the solder ribbon 120 extending along the long-axis direction X is not soldered to the back surface bus electrode 106. A section of the conductive layer 104 that bulges or swells. In this case, the magnitude of the downforce that the semiconductor substrate 102 is subjected to during the soldering process can be stabilized, thereby reducing the probability of solar cell breakage.

本創作除了上述第一較佳實施例外,另可包括其他太陽能電池的實施例。為簡化說明,以下說明主要針對第二實施例不同之處進行詳述,而不再對相同之處作重覆贅述。此外,本創作之各實施例中相同之元件係以相同之標號進行標示,以利於各實施例間互相對照。This creation may include, in addition to the first preferred embodiment described above, other embodiments of solar cells. In order to simplify the description, the following description mainly refers to the differences of the second embodiment, and the details are not repeated. In addition, the same elements in the embodiments of the present invention are denoted by the same reference numerals to facilitate the comparison between the embodiments.

第5圖是本創作第二實施例太陽能電池的背面結構示意圖。第6圖是沿著第5圖C-C’切線所繪示的太陽能電池的剖面示意圖。本實施例與上述第1、2圖所述的實施例的主要差別在於太陽能電池100’的各背面匯流電極係為非連續層,其係包括複數個沿著長軸方向X分佈的次匯流電極106’。其 中,各個次匯流電極106’的二側邊1061’、1062’係沿著長軸方向X而設置,致使側邊1061’、1062’會垂直於長軸方向X。類似地,各次匯流電極106’的側邊1061’、1062’會被暴露出於導電層104之外。Fig. 5 is a schematic view showing the structure of the back surface of the solar cell of the second embodiment of the present invention. Fig. 6 is a schematic cross-sectional view of the solar cell taken along the line C-C' of Fig. 5. The main difference between this embodiment and the above-mentioned first and second embodiments is that each of the back surface bus electrodes of the solar cell 100' is a discontinuous layer, which includes a plurality of secondary bus electrodes distributed along the long axis direction X. 106'. its The two side edges 1061', 1062' of the respective secondary bus electrodes 106' are disposed along the long axis direction X such that the side edges 1061', 1062' are perpendicular to the long axis direction X. Similarly, the sides 1061', 1062' of each of the bus electrodes 106' will be exposed outside of the conductive layer 104.

在後續製程中,沿著長軸方向X延伸的焊帶可以被焊接至相對應的各個次匯流電極106’,致使焊帶可以跨過各次匯流電極106’的側邊1061’、1062’。由於次匯流電極106’的側邊1061’、1062’不會與導電層104重疊,因此在將焊接的過程中,焊帶不會經過導電層104突升或突降的區段。在此情況下,可以穩定半導體基板102在焊接製程中所承受的下壓力,因而降低了太陽能電池破碎的機率。本實施例之太陽能電池除了改變背面匯流電極的設置佈局外,其餘各部件的特徵、設置位置和材料特性與上述第一實施例相似,故在此並不再贅述。In a subsequent process, the ribbon extending along the major axis direction X can be soldered to the respective secondary bus electrodes 106' such that the ribbon can span the sides 1061', 1062' of each of the bus electrodes 106'. Since the sides 1061', 1062' of the secondary bus electrode 106' do not overlap the conductive layer 104, the solder ribbon does not pass through the section of the conductive layer 104 that protrudes or collapses during soldering. In this case, the downforce that the semiconductor substrate 102 is subjected to during the soldering process can be stabilized, thereby reducing the probability of solar cell breakage. The solar cell of the present embodiment has similar features, arrangement positions, and material characteristics to those of the first embodiment except that the arrangement of the back side bus electrodes is changed, and therefore will not be described herein.

以上所述僅為本創作之較佳實施例,凡依本創作申請專利範圍所做之均等變化與修飾,皆應屬本創作之涵蓋範圍。The above descriptions are only preferred embodiments of the present invention, and all changes and modifications made by the scope of the patent application of the present invention should be covered by the present invention.

100‧‧‧太陽能電池100‧‧‧ solar cells

102‧‧‧半導體基板102‧‧‧Semiconductor substrate

104‧‧‧導電層104‧‧‧ Conductive layer

106‧‧‧背面匯流電極106‧‧‧Backside bus electrode

110‧‧‧摻雜區110‧‧‧Doped area

112‧‧‧正面匯流電極112‧‧‧ Positive Convergence Electrode

114‧‧‧保護介電層114‧‧‧Protective dielectric layer

120‧‧‧焊帶120‧‧‧ soldering tape

122‧‧‧焊接材料122‧‧‧Welding materials

1061、1062‧‧‧側邊1061, 1062‧‧‧ side

X‧‧‧長軸方向X‧‧‧ long axis direction

Claims (10)

一種太陽能電池,包括:一半導體基板,具有一背面;一背面匯流電極,設置在該背面上,其中該背面匯流電極包括相對設置的二側邊;以及一導電層,設置在該背面上,其中該導電層會覆蓋住部份該背面匯流電極,且該背面匯流電極的該些側邊會被暴露出於該導電層之外。A solar cell comprising: a semiconductor substrate having a back surface; a back side bus electrode disposed on the back surface, wherein the back side bus electrode includes opposite side edges; and a conductive layer disposed on the back surface, wherein The conductive layer covers a portion of the backside bus electrode, and the sides of the backside bus electrode are exposed outside the conductive layer. 如申請專利範圍第1項所述之太陽能電池,其中該背面匯流電極係為條狀的連續層。The solar cell of claim 1, wherein the backside bus electrode is a continuous layer of strips. 如申請專利範圍第1項所述之太陽能電池,其中該背面匯流電極係為一非連續層。The solar cell of claim 1, wherein the backside bus electrode is a discontinuous layer. 如申請專利範圍第3項所述之太陽能電池,其中該背面匯流電極另包括複數個次匯流電極,各該次匯流電極包括相對設置的二側邊,且各該次匯流電極的該些側邊會被暴露出於該導電層。The solar cell of claim 3, wherein the backside bus electrode further comprises a plurality of secondary bus electrodes, each of the busbar electrodes includes two opposite sides, and the sides of each of the busbar electrodes Will be exposed to the conductive layer. 如申請專利範圍第4項所述之太陽能電池,其中各該次匯流電極與該導電層間具有一間隙。The solar cell of claim 4, wherein each of the current collecting electrodes and the conductive layer has a gap. 如申請專利範圍第4項所述之太陽能電池,其中該太陽能電池另包括一焊帶,該焊帶會跨過該些次匯流電極的相對設置的該些側邊。The solar cell of claim 4, wherein the solar cell further comprises a solder ribbon that spans the opposite sides of the plurality of bus electrodes. 如申請專利範圍第1項所述之太陽能電池,其中該背面匯流電極另包括互 相垂直的一長軸方向和一短軸方向,該背面匯流電極的相對設置的該些側邊係垂直該長軸方向。The solar cell of claim 1, wherein the backside bus electrode further comprises The longitudinal direction of the vertical axis and the direction of the short axis, the opposite sides of the back side bus electrode are perpendicular to the long axis direction. 如申請專利範圍第1項所述之太陽能電池,其中該背面匯流電極與該導電層間具有一間隙。The solar cell of claim 1, wherein the backside bus electrode has a gap between the conductive layer and the conductive layer. 如申請專利範圍第1項所述之太陽能電池,其中該太陽能電池另包括一焊帶,該焊帶會跨過該背面匯流電極的該些側邊。The solar cell of claim 1, wherein the solar cell further comprises a solder ribbon that spans the sides of the backside bus electrode. 如申請專利範圍第1項所述之太陽能電池,其中該半導體基板另具有一受光正面,該太陽能電池另包括:一正面匯流電極,設置在該受光正面上;以及一保護介電層,設置在該正面匯流電極以及該半導體基板之間。The solar cell of claim 1, wherein the semiconductor substrate further has a light receiving front surface, the solar cell further comprising: a front side bus electrode disposed on the light receiving front surface; and a protective dielectric layer disposed on the The front side bus electrode and the semiconductor substrate.
TW103222576U 2014-12-19 2014-12-19 Solar cell TWM505701U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW103222576U TWM505701U (en) 2014-12-19 2014-12-19 Solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW103222576U TWM505701U (en) 2014-12-19 2014-12-19 Solar cell

Publications (1)

Publication Number Publication Date
TWM505701U true TWM505701U (en) 2015-07-21

Family

ID=54153487

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103222576U TWM505701U (en) 2014-12-19 2014-12-19 Solar cell

Country Status (1)

Country Link
TW (1) TWM505701U (en)

Similar Documents

Publication Publication Date Title
EP3203530B1 (en) Solar cell and method for producing thereof
EP2372775B1 (en) Electrode structure of solar cell
US20120192932A1 (en) Solar cell and its electrode structure
US20160126375A1 (en) Solar cell, method for manufacturing the same, and solar cell module
JP3220955U (en) Solar cell unit and method of manufacturing the same, assembly, system
JP5726303B2 (en) Solar cell and method for manufacturing the same
JP2017529704A (en) Main gate-free and highly efficient back contact solar cell module, assembly and manufacturing process
US20160276499A1 (en) Solar cell
TW201225325A (en) Solar cell and manufacturing method thereof
CN105144398B (en) The electric conductivity of solar battery is promoted
WO2022142054A1 (en) Back metal electrode of n-type topcon solar cell and preparation method therefor, and cell
CN104576820B (en) Manufacture the method and solar battery apparatus of solar battery apparatus back side contact
CN103928537B (en) Solar cell, module thereof and manufacturing method thereof
US20120118369A1 (en) Solar cell architecture having a plurality of vias with shaped foil via interior
KR102707789B1 (en) Conductive contacts for polycrystalline silicon features of solar cells
JP2018536292A (en) Back junction solar cell substrate, manufacturing method thereof, and back junction solar cell
TWM505701U (en) Solar cell
TWM477673U (en) Solar cell with improved backside structure
TW201431108A (en) A process of manufacturing an interdigitated back-contact solar cell
TW201503393A (en) Solar cell, module comprising the same and method of manufacturing the same
TWI509816B (en) Solar cell with wide and narrow electrode blocks and solar cell using the same
JP5944081B1 (en) Solar cell, solar cell module, method for manufacturing solar cell, method for manufacturing solar cell module
JP2014041940A (en) Solar cell module
TWI478369B (en) Method of manufacturing solar cell
TW201431096A (en) Solar cell, module comprising the same and method of manufacturing the same