TWM504415U - Back chamber expanded type stereo array mems mic chip scale package - Google Patents
Back chamber expanded type stereo array mems mic chip scale package Download PDFInfo
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本創作係有關於微機電晶片封裝領域,特別係有關於一種背腔擴大式立體聲陣列式微機電麥克風封裝結構。This creation is about the field of MEMS chip packaging, especially related to a back cavity enlarged stereo array type MEMS microphone package structure.
傳統的駐極體電容麥克風(Electret Condenser Microphone,ECM)使用了可保有永久電荷的駐極體物質,因而不需再對電容器供電。傳統的駐極體電容麥克風內部構造包含複數個駐極體材料底部結合背導電極;背導電極連接接地線;其複數個駐極體材料上下各用導電環連結;上方導電環與一壓感膜連結,以形成連通下方封閉腔室的一空氣間隙;並用金屬包覆整個內部構造;外部金屬之上方有一開口讓聲音進入至壓感膜。傳統型駐極體麥克風模組具有外觀尺寸大、電量耗損高、抗震性低、敏感度低之問題,並且對於溫度變化、振動、電磁干擾、電源波動..等等的周圍環境干擾的抑制能力差,更無法承受於高溫迴焊爐下作業…等缺點。The traditional Electret Condenser Microphone (ECM) uses an electret material that retains a permanent charge, eliminating the need to power the capacitor. The internal structure of the conventional electret condenser microphone includes a plurality of electret materials at the bottom and the back electrode; the back electrode is connected to the ground wire; and the plurality of electret materials are connected by conductive rings; the upper conductive ring and a pressure sense The membranes are joined to form an air gap that communicates with the lower closed chamber; and the entire internal structure is covered with metal; an opening above the outer metal allows sound to enter the pressure sensitive membrane. The conventional electret microphone module has the problems of large external dimensions, high power consumption, low shock resistance, low sensitivity, and suppression of ambient interference such as temperature changes, vibration, electromagnetic interference, power fluctuations, and the like. Poor, more can not withstand the high temperature reflow furnace operation ... and other shortcomings.
本國專利證號第I365525號「電聲感知微機電系統之超薄型封裝結構」揭示一種微機電超薄型封裝結構,以電聲感知 器晶片為麥克風基礎結構,電聲感知器晶片與基板以導電凸塊電性連接,基板的尺寸遠大於電聲感知器晶片,使導電球與電聲感知器晶片設置在基板之同一下表面。一通氣孔穿過該基板,並且一腔體位於基板表面與晶片表面之間且與通氣孔連通。並且,一後聲腔背板係位於晶片背面,故基板與晶片之間的腔體不能作為背腔。必須為密閉空間的背腔係位於電聲感知器晶片之內部,故背腔的空間受到晶片可挖空體積的現制。雖然此一微機電超薄型封裝結構具有超薄的型態,但相對地,基板尺寸的擴大,使得此一習知微機電超薄型封裝結構之表面接合面積(footprint)比晶片尺寸更為增大。此外,無法達到微機電麥克風晶片之晶圓級封裝製程要求。National Patent No. I365525 "Ultra-thin package structure of electroacoustic sensing MEMS" reveals a micro-electromechanical ultra-thin package structure with electroacoustic sensing The wafer is a microphone base structure, and the electroacoustic sensor wafer is electrically connected to the substrate by a conductive bump. The size of the substrate is much larger than that of the electroacoustic sensor wafer, and the conductive ball and the electroacoustic sensor wafer are disposed on the same lower surface of the substrate. A vent hole passes through the substrate, and a cavity is located between the surface of the substrate and the surface of the wafer and is in communication with the vent. Moreover, after the rear cavity backplane is located on the back side of the wafer, the cavity between the substrate and the wafer cannot be used as a back cavity. The back cavity, which must be a confined space, is located inside the electroacoustic sensor chip, so the space of the back cavity is subject to the hollowed out volume of the wafer. Although the micro-electromechanical ultra-thin package structure has an ultra-thin shape, the enlargement of the substrate size makes the surface of the conventional micro-electromechanical ultra-thin package more than the wafer size. Increase. In addition, wafer level packaging process requirements for MEMS microphone chips are not available.
本國專利證號第I350703號「麥克風模組及其製造方法」揭示一種麥克風模組。此模組包括之載板具有一穿孔。一麥克風設置於載板的第一側面並對應於穿孔。一處理晶片設置於載板的第一側面並耦接至麥克風。封膠材料設置於載板的第一側面以封裝麥克風及處理晶片。麥克風模組亦是以載板之穿孔作為通氣孔。麥克風亦應為習知密閉背腔完全在微機電晶片內部之結構。此一習知麥克風模組不僅表面接合面積較大且收音的清晰度亦有改善的空間。National Patent No. I350703 "Microphone Module and Method of Manufacturing Same" discloses a microphone module. The module includes a carrier plate having a perforation. A microphone is disposed on the first side of the carrier and corresponds to the perforation. A processing chip is disposed on the first side of the carrier and coupled to the microphone. A sealant material is disposed on the first side of the carrier to encapsulate the microphone and process the wafer. The microphone module also uses a perforation of the carrier as a vent. The microphone should also be a structure in which the well-sealed back cavity is completely inside the MEMS wafer. This conventional microphone module not only has a large surface joint area but also a space for improving the clarity of the sound.
為了解決上述之問題,本創作之主要目的係在於提供一種背腔擴大式立體聲陣列式微機電麥克風封裝結構,其係整 合型陣列式微機電麥克風晶片,可搭配應用晶圓級封裝技術,取代一般駐極體麥克風模組架構,可有效減少成品體積,滿足微型技術應用範圍,可有效減少節省金線材料成本並可應用於耐高溫表面黏著製程,並具有明顯增進高收音清晰度、高耐震性、低耗電量、抗環境電磁波干擾之功效。In order to solve the above problems, the main purpose of the present invention is to provide a back cavity enlarged stereo array type micro electromechanical microphone package structure, which is The combined array MEMS microphone chip can be used with wafer level packaging technology instead of the general electret microphone module architecture, which can effectively reduce the volume of the finished product and meet the application range of micro technology, which can effectively reduce the cost of saving gold wire materials and can be applied. It adheres to the high-temperature surface adhesion process and has the effect of significantly improving high-receiving clarity, high shock resistance, low power consumption, and resistance to environmental electromagnetic waves.
本創作的目的及解決其技術問題是採用以下技術方案來實現的。本創作揭示一種背腔擴大式立體聲陣列式微機電麥克風封裝結構,包含一微機電晶片、一線路基板、一環狀膠框以及一背腔擴大罩。該微機電晶片係具有一主動面以及一背面,該背面係形成有一開口朝向該背面之背腔穴,該背腔穴之底部係設有複數個陣列之通氣孔,該主動面係設置有一壓感膜。該線路基板係具有一貼合面、一外接合面以及一貫穿該線路基板之外音孔,該貼合面係以留間隙方式貼合於該微機電晶片之該主動面。該環狀膠框係黏合該微機電晶片之該主動面周邊與該線路基板之該貼合面之周邊。該背腔擴大罩係結合於該微機電晶片之該背面,以氣密該背腔穴,並且該背腔擴大罩係具有一內凹的罩空間,以使該背腔穴與該罩空間構成為一擴大式氣密背腔空間。藉此,提高收音清晰度並避免電磁干擾(EMI)。The purpose of this creation and solving its technical problems are achieved by the following technical solutions. The present invention discloses a back cavity enlarged stereo array type micro electromechanical microphone package structure, comprising a microelectromechanical wafer, a circuit substrate, an annular plastic frame and a back cavity expansion cover. The MEMS wafer has an active surface and a back surface, the back surface is formed with a back cavity facing the back surface, and the bottom of the back cavity is provided with a plurality of arrays of vent holes, and the active surface is provided with a pressure Sensory film. The circuit substrate has a bonding surface, an outer bonding surface, and a sound hole extending through the circuit substrate. The bonding surface is attached to the active surface of the MEMS wafer in a gap manner. The annular plastic frame is bonded to the periphery of the active surface of the MEMS wafer and the bonding surface of the circuit substrate. The back cavity expansion cover is coupled to the back surface of the MEMS wafer to hermetically seal the back cavity, and the back cavity expansion cover has a concave cover space to make the back cavity and the cover space It is an enlarged airtight back cavity space. Thereby, the radio clarity is improved and electromagnetic interference (EMI) is avoided.
本創作的目的及解決其技術問題還可採用以下技術措施進一步實現。The purpose of this creation and solving its technical problems can be further realized by the following technical measures.
在前述封裝結構中,可另包含複數個外導接端,係設置於該線路基板之該外接合面。In the foregoing package structure, a plurality of external guiding ends may be further disposed on the outer bonding surface of the circuit substrate.
在前述封裝結構中,該主動面係較佳地形成有一保護層,以固定該壓感膜,並使該壓感膜與該些通氣孔之間留有一第一空氣間隙,其係經由該些通氣孔連通至該擴大式氣密背腔空間。故可避免該壓感膜貼觸至該些通氣孔而造成失效。In the foregoing package structure, the active surface layer is preferably formed with a protective layer for fixing the pressure sensitive film, and a first air gap is left between the pressure sensitive film and the vent holes. The vent is connected to the enlarged airtight back cavity space. Therefore, the pressure sensitive film can be prevented from contacting the vent holes and causing failure.
在前述封裝結構中,該貼合面與該壓感膜之間係較佳地留有一第二空氣間隙,該外音孔係連通至該第二空氣間隙。故可避免該壓感膜貼觸至該線路基板之該貼合面而造成失效。In the foregoing package structure, a second air gap is preferably left between the bonding surface and the pressure sensitive film, and the external sound hole is connected to the second air gap. Therefore, the pressure sensitive film can be prevented from contacting the bonding surface of the circuit substrate to cause failure.
在前述封裝結構中,該線路基板之一第一表面覆蓋尺寸係較佳地接近於該微機電晶片之一第二表面覆蓋尺寸,而介於該第二表面覆蓋尺寸之0.8至1.5倍之間。藉此,可符合微機電麥克風封裝的晶圓級晶片尺寸封裝製程。In the foregoing package structure, a first surface coverage dimension of the circuit substrate is preferably close to a second surface coverage of the MEMS wafer, and between 0.8 and 1.5 times the second surface coverage dimension . Thereby, it can conform to the wafer level wafer size packaging process of the MEMS microphone package.
在前述封裝結構中,可另包含複數個內傳導元件,係設置於該微機電晶片與該線路基板之間,以電性連接該微機電晶片與該線路基板。In the foregoing package structure, a plurality of internal conductive elements may be further disposed between the MEMS wafer and the circuit substrate to electrically connect the MEMS wafer and the circuit substrate.
在前述封裝結構中,該些內傳導元件係具體地包含複數個結球凸塊且該環狀膠框密封包覆。In the foregoing package structure, the inner conductive elements specifically comprise a plurality of ball bumps and the annular plastic frame is sealed.
在前述封裝結構中,該些內傳導元件與該環狀膠框係具體地為相同材質之導電性熱固化膠體。In the above package structure, the inner conductive elements and the annular plastic frame are specifically conductive thermosetting colloids of the same material.
在前述封裝結構中,該線路基板之該貼合面之周邊係具體地設置有一凸出狀接墊,其係被該環狀膠框覆蓋。In the foregoing package structure, the periphery of the bonding surface of the circuit substrate is specifically provided with a protruding pad which is covered by the annular plastic frame.
在前述封裝結構中,該罩空間係具體地大於該背腔穴。In the aforementioned package structure, the hood space is specifically larger than the back cavity.
藉由上述的技術手段,本創作可以達成以下功效:With the above technical means, this creation can achieve the following effects:
一、微機電麥克風封裝結構可應用於晶圓級封裝技術,取代一般駐極體麥克風模組架構,可有效減少成品體積,滿足微型技術應用範圍,可適用於穿戴式體感或智慧型3C裝置。1. Micro-electromechanical microphone package structure can be applied to wafer-level packaging technology, replacing the general electret microphone module architecture, which can effectively reduce the volume of finished products, meet the application range of micro-technology, and can be applied to wearable body-sensing or smart 3C devices. .
二、使用凸塊結合在基板或晶圓上,可有效減少節省金線材料成本並可應用於耐高溫表面黏著製程,達到微機電麥克風晶片封裝的高量產能力。Second, the use of bumps combined on the substrate or wafer can effectively reduce the cost of gold wire materials and can be applied to high temperature surface adhesion processes to achieve high mass production capability of MEMS microphone chip packages.
三、藉由立體聲陣列式之微機電麥克風晶片結構,微小陣列的通氣孔在晶片內,使收音更細緻,與晶圓級封裝技術可明顯增進高收音清晰度、高耐震性、低耗電量、抗環境電磁波干擾。Third, through the stereo array type MEMS microphone structure, the tiny array of vent holes in the wafer, making the sound more detailed, and wafer-level packaging technology can significantly improve high-definition clarity, high shock resistance, low power consumption , resistant to environmental electromagnetic interference.
11‧‧‧晶圓置入之步驟11‧‧‧Steps for wafer placement
12‧‧‧晶片單離切割之步驟12‧‧‧Steps for wafer singulation
21‧‧‧基板置入之步驟21‧‧‧Steps for substrate placement
22‧‧‧環狀膠框印刷在基板上之步驟22‧‧‧Steps of printing an annular frame on a substrate
23‧‧‧晶片結合在基板上之步驟23‧‧‧Steps of bonding the wafer to the substrate
24‧‧‧背腔擴大罩結合在晶片上之步驟24‧‧‧Steps of combining the cavity expansion cover on the wafer
25‧‧‧環狀膠框固化之步驟25‧‧‧Steps for curing the ring frame
26‧‧‧基板單離切割之步驟26‧‧‧Steps for single-sided cutting
27‧‧‧晶片分類之步驟27‧‧‧Steps for wafer sorting
28‧‧‧封裝包裝之步驟28‧‧‧Packaging steps
31‧‧‧晶圓置入之步驟31‧‧‧Steps for wafer placement
32‧‧‧晶片單離切割之步驟32‧‧‧Steps for wafer singulation
41‧‧‧基板置入之步驟41‧‧‧Steps for substrate placement
42‧‧‧凸塊設置在基板上之步驟42‧‧‧Steps for placing bumps on the substrate
43‧‧‧環狀膠框印刷在基板上之步驟43‧‧‧Steps of printing the annular frame on the substrate
44‧‧‧晶片結合在基板上之步驟44‧‧‧Steps of bonding the wafer to the substrate
45‧‧‧背腔擴大罩結合在晶片上之步驟45‧‧‧Steps of combining the cavity expansion cover on the wafer
46‧‧‧環狀膠框固化之步驟46‧‧‧Steps for curing the ring frame
47‧‧‧基板單離切割之步驟47‧‧‧Steps of single-sided cutting
48‧‧‧晶片分類之步驟48‧‧‧Steps for wafer sorting
100‧‧‧背腔擴大式立體聲陣列式微機電麥克風封裝結構100‧‧‧Back cavity enlarged stereo array MEMS microphone package structure
110‧‧‧微機電晶片110‧‧‧Microelectromechanical Wafer
111‧‧‧主動面111‧‧‧Active surface
112‧‧‧背面112‧‧‧Back
113‧‧‧背腔穴113‧‧‧Back cavity
114‧‧‧通氣孔114‧‧‧vents
115‧‧‧壓感膜115‧‧‧Pressure film
116‧‧‧保護層116‧‧‧Protective layer
117‧‧‧第一空氣間隙117‧‧‧First air gap
118‧‧‧第二空氣間隙118‧‧‧Second air gap
120‧‧‧線路基板120‧‧‧Line substrate
121‧‧‧貼合面121‧‧‧Fitting surface
122‧‧‧外接合面122‧‧‧ external joint
123‧‧‧外音孔123‧‧‧Outer sound hole
124‧‧‧凸出狀接墊124‧‧‧ protruding pads
130‧‧‧環狀膠框130‧‧‧Ring plastic frame
140‧‧‧背腔擴大罩140‧‧‧Back cavity expansion cover
141‧‧‧罩空間141‧‧ ‧ hood space
142‧‧‧連結層142‧‧‧Linking layer
150‧‧‧外導接端150‧‧‧External terminal
160‧‧‧擴大式氣密背腔空間160‧‧‧Expanded airtight back cavity space
170‧‧‧內傳導元件170‧‧‧Internal conductive elements
200‧‧‧背腔擴大式立體聲陣列式微機電麥克風封裝結構200‧‧‧Back cavity enlarged stereo array MEMS microphone package structure
270‧‧‧內傳導元件270‧‧‧Internal conductive elements
第1圖:依據本創作之第一實施例,一種背腔擴大式立體聲陣列式微機電麥克風封裝結構之截面示意圖。FIG. 1 is a cross-sectional view showing a back cavity enlarged stereo array type micro electromechanical microphone package structure according to a first embodiment of the present invention.
第2圖:依據本創作之第一實施例,該背腔擴大式立體聲陣列式微機電麥克風封裝結構之製程方塊示意圖。FIG. 2 is a schematic diagram of a process block of the back cavity enlarged stereo array type micro electromechanical microphone package structure according to the first embodiment of the present invention.
第3圖:依據本創作之第二實施例,另一種背腔擴大式立體聲陣列式微機電麥克風封裝結構之截面示意圖。FIG. 3 is a cross-sectional view showing another back cavity enlarged stereo array type micro electromechanical microphone package structure according to the second embodiment of the present invention.
第4圖:依據本創作之第二實施例,該背腔擴大式立體聲陣列式微機電麥克風封裝結構之製程方塊示意圖。FIG. 4 is a schematic diagram of a process block of the back cavity enlarged stereo array type micro electromechanical microphone package structure according to the second embodiment of the present invention.
以下將配合所附圖示詳細說明本創作之實施例,然 應注意的是,該些圖示均為簡化之示意圖,僅以示意方法來說明本創作之基本架構或實施方法,故僅顯示與本案有關之元件與組合關係,圖中所顯示之元件並非以實際實施之數目、形狀、尺寸做等比例繪製,某些尺寸比例與其他相關尺寸比例或已誇張或是簡化處理,以提供更清楚的描述。實際實施之數目、形狀及尺寸比例為一種選置性之設計,詳細之元件佈局可能更為複雜。The embodiments of the present invention will be described in detail below with reference to the accompanying drawings, It should be noted that the illustrations are simplified schematic diagrams, and only the schematic diagrams are used to illustrate the basic architecture or implementation method of the present invention. Therefore, only the components and combinations related to the present invention are shown, and the components shown in the figures are not The actual number, shape, and size of the actual implementation are drawn in equal proportions, and some ratios of dimensions and other related dimensions are either exaggerated or simplified to provide a clearer description. The actual number, shape and size ratio of the implementation is an optional design, and the detailed component layout may be more complicated.
依據本創作之第一具體實施例,一種背腔擴大式立體聲陣列式微機電麥克風封裝結構100舉例說明於第1圖之截面示意圖以及第2圖之製程方塊示意圖。一種背腔擴大式立體聲陣列式微機電麥克風封裝結構100係包含一微機電晶片110、一線路基板120、一環狀膠框130以及一背腔擴大罩140。According to the first embodiment of the present invention, a back cavity enlarged stereo array type micro electromechanical microphone package structure 100 is illustrated in a cross-sectional view of FIG. 1 and a process block diagram of FIG. A back cavity enlarged stereo array type micro electromechanical microphone package structure 100 includes a microelectromechanical wafer 110, a circuit substrate 120, an annular plastic frame 130, and a back cavity expansion cover 140.
在本實施例中,該微機電晶片110係具有一主動面111以及一背面112,該背面112係形成有一開口朝向該背面112之背腔穴113,該背腔穴113之底部係設有複數個陣列之通氣孔114,該主動面111係設置有一壓感膜115。在本實施例中,該主動面111係較佳地形成有一保護層116,以固定該壓感膜115,並使該壓感膜115與該些通氣孔114之間留有一第一空氣間隙117,其係經由該些通氣孔114連通至該擴大式氣密背腔空間160。故可避免該壓感膜115貼觸至該些通氣孔114而造成失效。In this embodiment, the MEMS 110 has an active surface 111 and a back surface 112. The back surface 112 defines a back cavity 113 having an opening facing the back surface 112. The bottom of the back cavity 113 is provided with a plurality of bottoms. The vents 114 of the array are provided with a pressure sensitive film 115. In the embodiment, the active surface 111 is preferably formed with a protective layer 116 for fixing the pressure sensitive film 115, and a first air gap 117 is left between the pressure sensitive film 115 and the vent holes 114. It is communicated to the enlarged airtight back cavity space 160 via the vent holes 114. Therefore, the pressure sensitive film 115 can be prevented from contacting the vent holes 114 to cause failure.
在本實施例中,該線路基板120係具有一貼合面121、一外接合面122以及一貫穿該線路基板120之外音孔123,該貼合面121係以留間隙方式貼合於該微機電晶片110之該主動面 111。在本實施例中,該線路基板120之一第一表面覆蓋尺寸係較佳地接近於該微機電晶片110之一第二表面覆蓋尺寸,而介於該第二表面覆蓋尺寸之0.8至1.5倍之間。藉此,可符合微機電麥克風封裝的晶圓級晶片尺寸封裝製程。在本實施例中,該貼合面121與該壓感膜115之間係較佳地留有一第二空氣間隙118,該外音孔123係連通至該第二空氣間隙118。故可避免該壓感膜115貼觸至該線路基板120之貼合面121而造成失效。In this embodiment, the circuit substrate 120 has a bonding surface 121, an outer bonding surface 122, and a sound hole 123 extending through the circuit board 120. The bonding surface 121 is attached to the wiring surface 121. The active surface of the MEMS wafer 110 111. In this embodiment, the first surface coverage of the circuit substrate 120 is preferably close to a second surface coverage of the MEMS wafer 110, and between 0.8 and 1.5 times the second surface coverage. between. Thereby, it can conform to the wafer level wafer size packaging process of the MEMS microphone package. In the present embodiment, a second air gap 118 is preferably left between the bonding surface 121 and the pressure sensitive film 115, and the external sound hole 123 is connected to the second air gap 118. Therefore, the pressure sensitive film 115 can be prevented from contacting the bonding surface 121 of the circuit substrate 120 and causing failure.
該環狀膠框130係具體地黏合該微機電晶片110之該主動面111周邊與該線路基板120之該貼合面121之周邊。該環狀膠框130之材質係可為熱固性環氧化合物。較佳地,該線路基板120之該貼合面121之周邊係設置有一環形凸出狀接墊124,其係被該環狀膠框130覆蓋。該環狀膠框130係形成於該環形凸出狀接墊124上,以避免該環狀膠框130在固化之前溢流至該線路基板120之該貼合面121之其它區域。並且,該凸出狀接墊124的厚度係可用以確保在該貼合面121與該壓感膜115之間的第二空氣間隙118的最小下限間隙。The annular bead frame 130 is specifically bonded to the periphery of the active surface 111 of the MEMS wafer 110 and the periphery of the bonding surface 121 of the circuit substrate 120. The material of the annular frame 130 may be a thermosetting epoxy compound. Preferably, the periphery of the bonding surface 121 of the circuit substrate 120 is provided with an annular protruding pad 124 which is covered by the annular plastic frame 130. The annular bead frame 130 is formed on the annular protruding pad 124 to prevent the annular bezel 130 from overflowing to other regions of the bonding surface 121 of the circuit substrate 120 before curing. Moreover, the thickness of the protruding pad 124 can be used to ensure a minimum lower limit gap of the second air gap 118 between the bonding surface 121 and the pressure sensitive film 115.
該背腔擴大罩140係結合於該微機電晶片110之該背面112,以氣密該背腔穴113,並且該背腔擴大罩140係具有一內凹的罩空間141,以使該背腔穴113與該罩空間141構成為一擴大式氣密背腔空間160。該背腔擴大罩140與該微機電晶片110之結合關係係可利用一連結層142,例如熱固性導電膠,可與該環狀膠框130為相同材質。該背腔擴大罩140係可為一金屬罩,具體地 可經由該微機電晶片110而與該線路基板120為接地連接,例如導接至該線路基板120之接地墊。該罩空間141係可大於該背腔穴113。當該微機電晶片110為薄化型態,該背腔穴113亦可縮小,聲感背腔體積可由該罩空間141貢獻百分之50以上。The back cavity expansion cover 140 is coupled to the back surface 112 of the MEMS wafer 110 to hermetically seal the back cavity 113, and the back cavity expansion cover 140 has a concave cover space 141 for the back cavity The cavity 113 and the cover space 141 are formed as an enlarged airtight back cavity space 160. The bonding relationship between the back cavity expansion cover 140 and the MEMS wafer 110 can utilize a bonding layer 142, such as a thermosetting conductive paste, which can be made of the same material as the annular plastic frame 130. The back cavity expansion cover 140 can be a metal cover, specifically The circuit board 120 can be grounded via the MEMS wafer 110, for example, to the ground pad of the circuit substrate 120. The hood space 141 can be larger than the back cavity 113. When the MEMS wafer 110 is in a thinned form, the back cavity 113 can also be reduced, and the acoustic back cavity volume can be contributed by the hood space 141 by more than 50%.
此外,該背腔擴大式立體聲陣列式微機電麥克風封裝結構100係可另包含複數個外導接端150,係設置於該線路基板120之該外接合面122。該些外導接端150係作為該背腔擴大式立體聲陣列式微機電麥克風封裝結構100之外接端子,可選自於金屬墊、金屬球、金屬針、導電膏、導電膠之其中之一。在本實施例中,該些外導接端150係為金屬平墊。In addition, the back cavity enlarged stereo array type micro electromechanical microphone package structure 100 can further include a plurality of outer guiding ends 150 disposed on the outer bonding surface 122 of the circuit substrate 120. The external guiding end 150 is used as an external terminal of the back cavity enlarged stereo array type micro electromechanical microphone package structure 100, and may be selected from one of a metal pad, a metal ball, a metal needle, a conductive paste, and a conductive adhesive. In this embodiment, the outer guiding ends 150 are metal flat pads.
在本實施例中,該背腔擴大式立體聲陣列式微機電麥克風封裝結構100係可另包含複數個內導電元件170,係設置於該微機電晶片110與該線路基板120之間,以電性連接該與該線路基板120。在本實施例中,該些內傳導元件170與該環狀膠框130係為相同材質之導電性熱固化膠體。In this embodiment, the back cavity enlarged stereo array MEMS microphone package structure 100 can further include a plurality of inner conductive elements 170 disposed between the MEMS wafer 110 and the circuit substrate 120 for electrical connection. The circuit board 120 is connected to the circuit board 120. In this embodiment, the inner conductive elements 170 and the annular plastic frame 130 are electrically conductive thermosetting colloids of the same material.
關於該背腔擴大式立體聲陣列式微機電麥克風封裝結構100之製造,如第2圖所示可應用於晶圓製程步驟,並配合第1圖之結構。在「晶圓置入」之步驟11中,複數個上述的微機電晶片110係一體地構成於一晶圓中。在「晶片單離切割」之步驟12中,該微機電晶片110被單離切割成晶粒型態。接著,在「基板置入」之步驟21中,複數個上述的線路基板120係可一體地構成於一基板母片中。在「環狀膠框印刷在基板上」之步驟22中,該環狀膠框 130的固化前導電膠體係印刷在該線路基板120之該貼合面121上,在此步驟中,與該環狀膠框130相同材質的內導電元件170的固化前導電膠體亦可印刷在該線路基板120上。在「晶片結合在基板上」之步驟23中,該微機電晶片110係結合在該線路基板120上。在「背腔擴大罩結合在晶片上」之步驟24中,該背腔擴大罩140連結在該微機電晶片110之該背面112,使該背腔穴113與該罩空間141構成為一擴大式氣密背腔空間160。在「環狀膠框固化」之步驟25中,加熱固化該環狀膠框130,使得該第二空間間隙118為固定不可變動,當該背腔擴大罩140之連結層142與該環狀膠框130為相同材質,可同步固化該連結層142,故該線路基板120與該微機電晶片110結合時,該微機電晶片110與該背腔擴大罩140亦黏接完成。在「基板單離切割」之步驟26中,切割基板母片,以使該線路基板120單離成形,即製作出上述的背腔擴大式立體聲陣列式微機電麥克風封裝結構100。最後,在「晶片分類」之步驟27中,測試出良好的微機電晶片110並挑選分級,以進行「封裝包裝」之步驟28中,可供出貨。The fabrication of the back cavity enlarged stereo array type microelectromechanical microphone package structure 100 can be applied to the wafer process step as shown in FIG. 2, and cooperates with the structure of FIG. In step 11 of "wafer placement", a plurality of the above-described MEMS wafers 110 are integrally formed in a wafer. In step 12 of "wafer singulation", the MEMS wafer 110 is singulated into a grain pattern. Next, in the step 21 of "substrate placement", a plurality of the above-mentioned circuit boards 120 can be integrally formed in a substrate mother substrate. In step 22 of "ring-shaped frame printing on the substrate", the ring-shaped frame The pre-curing conductive adhesive system of 130 is printed on the bonding surface 121 of the circuit substrate 120. In this step, the pre-curing conductive colloid of the inner conductive member 170 of the same material as the annular plastic frame 130 can also be printed on the bonding surface. On the circuit substrate 120. In step 23 of "bonding the wafer to the substrate", the MEMS wafer 110 is bonded to the wiring substrate 120. In the step 24 of "the back cavity expansion cover is coupled to the wafer", the back cavity expansion cover 140 is coupled to the back surface 112 of the MEMS wafer 110, so that the back cavity 113 and the cover space 141 are formed in an enlarged manner. Airtight back cavity space 160. In step 25 of the "ring frame curing", the annular frame 130 is heated and cured, so that the second space gap 118 is fixed and non-changeable. When the back cavity enlarges the connecting layer 142 of the cover 140 and the ring rubber The frame 130 is made of the same material, and the bonding layer 142 can be simultaneously cured. Therefore, when the circuit substrate 120 is combined with the MEMS wafer 110, the MEMS wafer 110 and the back cavity expansion cover 140 are also bonded. In step 26 of "substrate secant dicing", the substrate mother substrate is diced to form the circuit substrate 120 in a single shape, that is, the above-described back cavity enlarged stereo array type micro electromechanical microphone package structure 100 is fabricated. Finally, in step 27 of the "Chip Classification", a good MEMS wafer 110 is tested and the grading is selected for the "packaging" step 28 for shipping.
依據本創作之第二具體實施例,另一種背腔擴大式立體聲陣列式微機電麥克風封裝結構200舉例說明於第3圖之截面示意圖以及第4圖之製程方塊示意圖。該背腔擴大式立體聲陣列式微機電麥克風封裝結構200係包含一微機電晶片110、一線路基板120、一環狀膠框130以及一背腔擴大罩140。According to a second embodiment of the present invention, another back cavity enlarged stereo array type micro electromechanical microphone package structure 200 is illustrated in a cross-sectional view of FIG. 3 and a process block diagram of FIG. The back cavity enlarged stereo array micro-electromechanical microphone package structure 200 includes a microelectromechanical wafer 110, a circuit substrate 120, an annular plastic frame 130, and a back cavity expansion cover 140.
該微機電晶片110係具有一主動面111以及一背面 112,該背面112係形成有一開口朝向該背面112之背腔穴113,該背腔穴113之底部係設有複數個陣列之通氣孔114,該主動面111係設置有一壓感膜115。在本實施例中,該主動面111係較佳地形成有一保護層116,以固定該壓感膜115,並使該壓感膜115與該些通氣孔114之間留有一第一空氣間隙117,其係經由該些通氣孔114連通至該擴大式氣密背腔空間160。故可避免該壓感膜115貼觸至該些通氣孔114而造成失效。The MEMS wafer 110 has an active surface 111 and a back surface 112. The back surface 112 defines a back cavity 113 having an opening facing the back surface 112. The bottom of the back cavity 113 is provided with a plurality of arrays of vent holes 114. The active surface 111 is provided with a pressure sensitive film 115. In the embodiment, the active surface 111 is preferably formed with a protective layer 116 for fixing the pressure sensitive film 115, and a first air gap 117 is left between the pressure sensitive film 115 and the vent holes 114. It is communicated to the enlarged airtight back cavity space 160 via the vent holes 114. Therefore, the pressure sensitive film 115 can be prevented from contacting the vent holes 114 to cause failure.
該線路基板120係具有一貼合面121、一外接合面122以及一貫穿該線路基板120之外音孔123,該貼合面121係以留間隙方式貼合於該微機電晶片110之該主動面111。在本實施例中,該線路基板120之一第一表面覆蓋尺寸係較佳地接近於且不大於該微機電晶片110之一第二表面覆蓋尺寸,而介於該第二表面覆蓋尺寸之0.8至1.5倍之間。藉此,可符合微機電麥克風封裝的晶圓級晶片尺寸封裝製程。更具體地,該貼合面121與該壓感膜115之間係較佳地留有一第二空氣間隙118,該外音孔123係連通至該第二空氣間隙118。故可避免該壓感膜115貼觸至該線路基板120之該貼合面121而造成失效。在本實施例中,該環狀膠框130係具體地黏合該微機電晶片110之該主動面111周邊與該線路基板120之該貼合面121之周邊。該背腔擴大罩140係結合於該微機電晶片110之該背面112,以氣密該背腔穴113,並且該背腔擴大罩140係具有一內凹的罩空間141,以使該背腔穴113與該罩空間141構成為一擴大式氣密背腔空間160。該罩空間141係可大於該背腔穴113。The circuit board 120 has a bonding surface 121 , an outer bonding surface 122 , and a sound hole 123 extending through the circuit board 120 . The bonding surface 121 is attached to the MEMS 110 in a gap manner. Active surface 111. In this embodiment, a first surface coverage dimension of the circuit substrate 120 is preferably close to and not greater than a second surface coverage of the MEMS wafer 110, and 0.8 of the second surface coverage dimension. Between 1.5 times. Thereby, it can conform to the wafer level wafer size packaging process of the MEMS microphone package. More specifically, a second air gap 118 is preferably left between the bonding surface 121 and the pressure sensitive film 115, and the external sound hole 123 is connected to the second air gap 118. Therefore, the pressure sensitive film 115 can be prevented from contacting the bonding surface 121 of the circuit substrate 120 to cause failure. In this embodiment, the annular bead frame 130 is specifically bonded to the periphery of the active surface 111 of the MEMS wafer 110 and the periphery of the bonding surface 121 of the circuit substrate 120. The back cavity expansion cover 140 is coupled to the back surface 112 of the MEMS wafer 110 to hermetically seal the back cavity 113, and the back cavity expansion cover 140 has a concave cover space 141 for the back cavity The cavity 113 and the cover space 141 are formed as an enlarged airtight back cavity space 160. The hood space 141 can be larger than the back cavity 113.
此外,該背腔擴大式立體聲陣列式微機電麥克風封裝結構200係可另包含複數個外導接端150,係設置於該線路基板120之該外接合面122。該背腔擴大式立體聲陣列式微機電麥克風封裝結構200係可另包含複數個內傳導元件270,係設置於該微機電晶片110與該線路基板120之間,以電性連接該微機電晶片110與該線路基板120。在本實施例中,該些內傳導元件270係具體地包含複數個結球凸塊且該環狀膠框130密封包覆。例如,該些內傳導元件270可為打線鍵合形成之金結球凸塊(gold stud bump),其係接合於該微機電晶片110之銲墊,以取代金屬銲線的傳導。該些內傳導元件270並可作為間隙維持件(stand-off),以提供在該貼合面121與該壓感膜115之間的一第二空氣間隙118。In addition, the back cavity enlarged stereo array micro-electromechanical microphone package structure 200 can further include a plurality of external guiding ends 150 disposed on the outer bonding surface 122 of the circuit substrate 120. The back cavity enlarged stereo array micro-electromechanical microphone package structure 200 can further include a plurality of inner conductive elements 270 disposed between the microelectromechanical wafer 110 and the circuit substrate 120 to electrically connect the microelectromechanical wafer 110 with The circuit substrate 120. In this embodiment, the inner conductive elements 270 specifically include a plurality of ball bumps and the annular plastic frame 130 is sealed and coated. For example, the inner conductive elements 270 may be gold stud bumps formed by wire bonding, which are bonded to the pads of the microelectromechanical wafer 110 to replace the conduction of the metal bonding wires. The inner conductive elements 270 can serve as a gap-off to provide a second air gap 118 between the abutment surface 121 and the pressure sensitive film 115.
關於該背腔擴大式立體聲陣列式微機電麥克風封裝結構200之製造,如第4圖所示可應用於晶圓製程步驟,並配合第3圖之結構。在「晶圓置入」之步驟31中,複數個上述的微機電晶片110係一體地構成於一晶圓中。在「晶片單離切割」之步驟32中,該微機電晶片110被單離切割成晶粒型態。接著,在「基板置入」之步驟41中,複數個上述的線路基板120係可一體地構成於一基板母片中。在「凸塊設置在基板上」之步驟42中,上述內傳導元件270係具體地包含複數個結球凸塊,設置在該線路基板120上。在「環狀膠框印刷在基板上」之步驟43中,該環狀膠框130的固化前膠體係印刷在該線路基板120之該貼合面121之周邊區域上。在「晶片結合在基板上」之步驟44中,藉由該些內傳導元件270與該環狀 膠框130,該微機電晶片110係結合在該線路基板120上。在「背腔擴大罩結合在晶片上」之步驟45中,該背腔擴大罩140係連結在該微機電晶片110之該背面112,係形成一擴大式氣密背腔空間160。在「環狀膠框固化」之步驟46中,加熱固化該環狀膠框130,使得上述第二空間間隙118為固定,並且該微機電晶片110與該背腔擴大罩140亦可黏接完成,即製作出上述的背腔擴大式立體聲陣列式微機電麥克風封裝結構200。最後,在「晶片分類」之步驟27中,測試出良好的微機電晶片110並挑選分級。The fabrication of the back cavity enlarged stereo array type microelectromechanical microphone package structure 200 can be applied to the wafer fabrication steps as shown in FIG. 4, and cooperates with the structure of FIG. In step 31 of "wafer placement", a plurality of the above-described MEMS wafers 110 are integrally formed in a wafer. In step 32 of "wafer singulation", the MEMS wafer 110 is singulated into a grain pattern. Next, in the step 41 of "substrate placement", a plurality of the above-mentioned circuit boards 120 can be integrally formed in a substrate mother substrate. In the step 42 of "the bumps are disposed on the substrate", the inner conductive member 270 specifically includes a plurality of ball bumps disposed on the circuit substrate 120. In the step 43 of "the annular frame is printed on the substrate", the pre-curing adhesive system of the annular bezel 130 is printed on the peripheral region of the bonding surface 121 of the circuit substrate 120. In step 44 of "bonding the wafer to the substrate", the inner conductive elements 270 and the ring are The plastic frame 130 is bonded to the circuit substrate 120. In the step 45 of "the back cavity expansion cover is bonded to the wafer", the back cavity expansion cover 140 is coupled to the back surface 112 of the MEMS wafer 110 to form an enlarged airtight back cavity space 160. In step 46 of the "ring frame curing", the annular frame 130 is heated and cured, so that the second space gap 118 is fixed, and the MEMS wafer 110 and the back cavity expansion cover 140 can be bonded together. That is, the above-described back cavity enlarged stereo array type micro electromechanical microphone package structure 200 is fabricated. Finally, in step 27 of the "wafer classification", a good MEMS wafer 110 is tested and the grading is selected.
因此,本創作揭示一種背腔擴大式立體聲陣列式微機電麥克風封裝結構,用以避免習知傳統的駐極體電容麥克風模組之外觀尺寸大、電量耗損高、抗震性低、敏感度低、對於周圍環境干擾的抑制能力差、無法承受於高溫迴焊爐下作業…等缺點。進而運用背腔擴大式立體聲陣列式微機電麥克風晶片,搭應用配晶圓級封裝技術滿足微型技術應用範圍。Therefore, the present invention discloses a back cavity enlarged stereo array type micro electromechanical microphone package structure, so as to avoid the conventional appearance of the electret condenser microphone module, such as large size, high power consumption, low shock resistance, low sensitivity, and Disadvantages such as poor suppression of ambient interference and inability to withstand high temperature reflow furnace operations. Furthermore, the back cavity enlarged stereo array type micro electromechanical microphone chip is used, and the wafer level packaging technology is applied to meet the application range of the micro technology.
以上所揭露的僅為本創作較佳實施例而已,當然不能以此來限定本創作之權利範圍,因此依本創作權利要求所作的等同變化,仍屬本創作所涵蓋的範圍。The above disclosure is only the preferred embodiment of the present invention, and it is of course not possible to limit the scope of the present invention. Therefore, equivalent changes made in accordance with the present invention are still within the scope of the present invention.
100‧‧‧背腔擴大式立體聲陣列式微機電麥克風封裝結構100‧‧‧Back cavity enlarged stereo array MEMS microphone package structure
110‧‧‧微機電晶片110‧‧‧Microelectromechanical Wafer
111‧‧‧主動面111‧‧‧Active surface
112‧‧‧背面112‧‧‧Back
113‧‧‧背腔穴113‧‧‧Back cavity
114‧‧‧通氣孔114‧‧‧vents
115‧‧‧壓感膜115‧‧‧Pressure film
116‧‧‧保護層116‧‧‧Protective layer
117‧‧‧第一空氣間隙117‧‧‧First air gap
118‧‧‧第二空氣間隙118‧‧‧Second air gap
120‧‧‧線路基板120‧‧‧Line substrate
121‧‧‧貼合面121‧‧‧Fitting surface
122‧‧‧外接合面122‧‧‧ external joint
123‧‧‧外音孔123‧‧‧Outer sound hole
124‧‧‧凸出狀接墊124‧‧‧ protruding pads
130‧‧‧環狀膠框130‧‧‧Ring plastic frame
140‧‧‧背腔擴大罩140‧‧‧Back cavity expansion cover
141‧‧‧罩空間141‧‧ ‧ hood space
142‧‧‧連結層142‧‧‧Linking layer
150‧‧‧外導接端150‧‧‧External terminal
160‧‧‧擴大式氣密背腔空間160‧‧‧Expanded airtight back cavity space
170‧‧‧內傳導元件170‧‧‧Internal conductive elements
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