TWM500108U - A multilayer film sputtering system with a single magnetic control target - Google Patents

Description

Single magnetron target multi-layer film sputtering system

This creation is about a single magnetron target multi-layer film sputtering system, especially a device system that uses a sputtering method to create a multilayer film that enhances the efficiency and quality of the sputtering process by its specific system.

Human discovery of sputtering technology can be traced back to the 19th century, discovered by WRGrove in DC discharge tubes, and then in the early 20th century, research on RF plasma sputtering was discovered, and RF plasmas were found to have removed discharges. Non-conductive materials on the surface of the tube, in the 1960s, sputtering technology was applied to the formation of dielectric films. Since argon is an inert gas and has a high atomic weight, the atom of the target can be sputtered in a large amount and deposited on the substrate after being dissociated into argon ions without chemical reaction with the target. Therefore, modern sputtering is performed. The process mainly uses argon as a working gas to generate plasma. The sputtering system can be divided into direct current sputtering and radio frequency sputtering according to the type of power supply. Generally, the DC power supply is mainly used to sputter a highly conductive metal target, and the RF sputtering is performed. It is often used in materials with poor conductivity, such as germanium, or in dielectric targets such as cerium oxide.

Common sputtering equipment basically consists of a chamber with a closed chamber a body, a target mounted in the chamber, and a power supply, and the predetermined sputtered substrate is fed into the chamber of the chamber, and the target in the chamber, in addition, the power supply Connected between the target and the substrate. In DC sputtering, the power supply operates with a DC voltage applied across the two poles. Such DC sputtering not only has lower equipment cost, but also produces a higher deposition rate, but has the disadvantage that it is impossible to sputter a substrate having an insulator property, and the range of use is limited. If the power supply provides RF power and a metal electrode is attached to the back of the target of the cavity, it is RF sputter. This kind of RF sputtering can produce high-quality films and can be deposited on metals, semiconductors and insulators. Therefore, the sputtering quality is better and the field of application is wider. However, the deposition rate is slower and the equipment cost is higher. Disadvantages.

In addition, in the sputtering equipment, vacuuming is an important procedure, and it is an important key to affect the quality of the product. In order to consider the yield, the sputtering equipment is designed with vacuum technology in mind. Before the operation, it takes a lot of time to draw the predetermined vacuum. When the product is taken out, it is necessary to have a vacuum breaking procedure. Therefore, the equipment needs to be equipped with high-precision mechanical action to maintain the quality, otherwise it is difficult to meet the requirements. The cost is the reason for the high price of sputtering equipment.

In addition to DC sputtering and RF sputtering, another type of magnetron sputtering is also common. Magnetron sputtering equipment installation There are magnets that cause the electrons to spiral in motion by the generated magnetic field to increase the probability that the gas atoms or molecules will be freed. The biggest advantage of magnetron sputtering is the high gas dissociation rate, which can be sputtered in a high vacuum environment, and the yield is generally better. Another advantage is that since the electrons are easily bound to the cathode, the substrate temperature is relatively low, and it can be applied to a substrate whose material is not resistant to high temperatures.

In view of this, the creator also considered a vacuum extraction, product film generation, and mechanical equipment complexity, in which a balance point was achieved, and a single magnetron target multilayer film sputtering system was designed.

The main purpose of the present invention is to provide a single magnetron target multi-layer film sputtering system, which adopts two accommodating chambers, allowing the substrate to form a first film in one of the accommodating chambers, and can wait in another accommodating chamber. The target is replaced, and the vacuuming time is reduced; and because the volume of the accommodating chamber is small, the gas is not easily dissipated, and a better vacuum effect can be maintained, thereby providing high quality product yield.

In order to achieve the purpose of the present invention, the creator designed a single magnetron target multi-layer film sputtering system, which comprises: a first accommodating chamber; and a second accommodating chamber disposed in the first accommodating chamber. One side; an isolation door is disposed between the first accommodating chamber and the second accommodating chamber, and when the isolation door is closed, the second accommodating chamber is in a sealed state; wherein, when the isolation door is When opened, a substrate located in the first housing chamber is moved to the substrate through the isolation door a second accommodating chamber; wherein, when the isolation door is opened, a substrate located in the second accommodating chamber moves to the first accommodating chamber through the isolation door; and a sputtering target is disposed at the first An upper portion of the accommodating chamber is disposed above the accommodating chamber; and a substrate is disposed under the sputtering target when the substrate is received in the first accommodating chamber.

In more detail, the first accommodating chamber and the second accommodating chamber are each connected to a vacuum pump, wherein the vacuum pump is connected to the first accommodating chamber and the second accommodating chamber and has any of the following : Sealed rubber, magnetic fluid and bellows.

Optionally, the present invention is applied to DC sputtering, such that the sputtering target comprises a target holder and a DC sputtering target, wherein the DC sputtering target is disposed in the target holder. The target holder is mounted on the first housing chamber.

Optionally, the present invention is applied to radio frequency sputtering, such that the sputtering target comprises a target holder and an RF sputtering target, wherein the RF sputtering target is disposed in the target holder. The target holder is mounted on the first housing chamber.

Optionally, the present invention is applied to magnetron sputtering, such that the sputtering target comprises a target holder and a magnetron sputtering target, wherein the magnetron sputtering target is disposed on the target The target holder is mounted on the first housing chamber.

In more detail, the isolation door has two gates, which are between the gates. A vacuum line is connected to connect the vacuum pump.

In more detail, the inner material of the first accommodating chamber and the second accommodating chamber may be selected from the following: stainless steel, aluminum alloy.

In more detail, the first accommodating chamber and the second accommodating chamber each include a conveying device for carrying the substrate, and when the isolation door is opened, the substrate in the first accommodating chamber can be transported The device is delivered to the second accommodating chamber, and the substrate in the second accommodating chamber is transported to the first accommodating chamber by the conveying device.

The present invention provides a first extended embodiment, a third accommodating chamber is disposed beside the first accommodating chamber, and a sputtering target is disposed above the third accommodating chamber, and an isolation door is disposed at the first accommodating Between the chamber and the third housing chamber.

The present invention provides a second extended embodiment, a third accommodating chamber is disposed beside the second accommodating chamber, and a sputtering target is disposed above the third accommodating chamber, and an isolation door is disposed at the second accommodating Between the chamber and the third housing chamber.

[this creation]

1‧‧‧Single magnetron target multilayer film sputtering system

11‧‧‧First accommodation room

12‧‧‧Second accommodation room

13‧‧‧Isolation door

131‧‧ ‧ gate

132‧‧‧vacuum line

14‧‧‧Splating target

141‧‧‧ Target holder

142‧‧‧DC sputtering target

143‧‧‧RF sputtering target

144‧‧‧Magnetic Sputtering Target

15‧‧‧ third accommodation room

2‧‧‧Substrate

3‧‧‧ Sealing rubber ring

The first picture is a schematic diagram of installing a sealing rubber ring for a single magnetron target multi-layer film sputtering system; the second figure is a schematic diagram of DC sputtering using the sputtering target; Figure 3 is a schematic diagram of the use of RF sputtering for the sputter target; Figure 4 is a schematic diagram of the magnetron sputtering using the sputter target; Figure 5 is a schematic view of the vacuum isolation pipe for the creative isolation door; Figure 6 is a schematic diagram showing the substrate transfer of a single magnetron target multi-layer film sputtering system; Figure 7A is a first extended embodiment of a single magnetron target multi-layer film sputtering system; This is a second extended implementation of a single magnetron target multilayer film sputtering system.

In order to more clearly describe a single magnetic proposed by the present creation The target multi-layer film sputtering system will be described in detail below with reference to the drawings.

Please refer to Figure 1 for a single magnetron target multi-layer film sputtering The system is equipped with a schematic diagram of a sealing rubber ring. As shown in the figure, the present invention is a single magnetron target multi-layer film sputtering system 1, which comprises: a first accommodating chamber 11 as a coating chamber; and a second accommodating chamber 12 disposed at the first accommodating chamber. One side of the chamber 11 is used as a loading chamber; an isolation door 13 is bidirectionally disposed between the first housing chamber 11 and the second housing chamber 12, when the isolation door 13 is closed, The second accommodating chamber 12 is in a sealed state; wherein when the isolation door 13 is opened, a substrate 2 located in the first accommodating chamber 11 passes through the The isolation door 13 is moved to the second accommodating chamber 12; the substrate 2 is kept in a vacuum state, and the target of the accommodating chamber 12 is replaced. When the isolation door 13 is opened again, the second accommodating chamber 13 is located in the second accommodating chamber. a substrate 2 of 12 is moved to the first accommodating chamber 11 through the isolation door 13 to perform a next coating operation; and a sputtering target 14 is disposed above the first accommodating chamber 11 and is covered The first accommodating chamber 11 is located below the sputtering target 14 when the substrate 2 is received in the first accommodating chamber 11. The first accommodating chamber 11 and the second accommodating chamber 12 are each connected to a vacuum pump, and the vacuum pump is connected to the first accommodating chamber 11 and the second accommodating chamber 12 to have a sealing rubber. , magnetic fluid or telescopic sleeve (Bellows) to increase the vacuum.

Following the above, in the present creation, the substrate 2 can be a semiconductor The wafer, or other material to form a multilayer film. After the substrate 2 is placed in the first accommodating chamber 11, ions are bombarded on the surface of the sputtering target 14 to form a first layer of material on the substrate 2, and then the substrate 2 is transferred to the second accommodating chamber. 12, and close the isolation door 13; after closing the isolation door 13, the first accommodation chamber 11 is broken, replacing the sputtering target 14 with other materials, and then vacuuming the first accommodation chamber 11, and then having the first The substrate 2 of the layer material is transferred to the first housing chamber 11 and a second layer of material is formed on the substrate 2. Thus, according to this procedure, a multilayer film can be formed on the substrate 2. The volume of the first accommodating chamber 11 and the second accommodating chamber 12 is small and does not need to be too large. In fact, as long as the space is sufficient for accommodating the substrate 2, vacuum pumping work is required in addition to low manufacturing cost. The amount is also reduced, and the first housing chamber 11 and the second The predetermined vacuum value can be quickly drawn into the accommodating chamber 12 to reduce the processing time. It can be understood from the technical characteristics of this creation that the sputtering system of the present invention can reduce the cost and shorten the time compared with the conventional technology. The created sputtering system is suitable for small-volume substrates, such as four-inch wafers, or mobile phone panels. Although there are only two housing spaces, it has multiple housings compared to the main machine. In terms of space, the stroke of the created sputtering system is not slow.

Please refer to Figure 2 for a schematic diagram of DC sputtering for the sputter target. As shown, in the present application, the sputtering target 14 can be applied to DC sputtering, and includes a target holder 141 and a DC sputtering target 142, wherein the DC sputtering target 142 is disposed. In the target holder 141, the target holder 141 is mounted on the first housing chamber 11. When the sputtering system of the present invention is applied to DC sputtering, the components may be connected to the electrodes by referring to the method of the present invention, and the manner of connecting the electrodes is a conventional technique, which will not be described herein.

Please refer to Figure 3 for a schematic diagram of RF sputtering for this sputter target. As shown, in the present application, the sputtering target 14 can be applied to RF sputtering, and includes a target holder 141 and an RF sputtering target 143, wherein the RF sputtering target 143 is disposed. In the target holder 141, the target holder 141 is mounted on the first housing chamber 11. When the sputtering system of the present invention is applied to the RF sputtering, the components are connected to the electrode by referring to the method of the creation, and the electrode connection method is a conventional technique. Surgery, I will not repeat them here.

Please refer to Figure 4 for magnetic sputtering of the created sputtering target. schematic diagram. As shown, in the present application, the sputtering target 14 can be applied to magnetron sputtering and includes a target holder 141 and a magnetron sputtering target 144, wherein the magnetron sputtering target The material 144 is disposed in the target holder 141, and the target holder 141 is mounted on the first housing chamber 11. When the sputtering system of the present invention is applied to magnetron sputtering, the components are connected to the electrodes in the manner of the present invention, and the manner of connecting the electrodes is a conventional technique, which will not be described herein.

Referring to FIG. 1 again, in order to increase the gas density, the present invention installs a sealing rubber ring 3 on each side of the isolation door 13 to increase the sealing effect at the time of closing. The isolation door 13 is mainly used to prevent the second accommodating chamber 12 in which the substrate 2 is stored from being affected when the first accommodating chamber 11 is broken. In the implementation, according to the needs of consideration, make appropriate changes. If a gate is enough, you only need to install a sealing rubber ring 3 on the side of the gate. When the substrate 2 moves, the gate is opened. After closing, the sealing rubber ring 3 can be provided. Its sealing effect. Although a door is possible, in general, two doors will be used for better isolation. As shown in the figure, the isolation door 13 has gates on both sides, and both have a sealing rubber ring 3. When the actuation, the isolation door 13 moves in the direction of the protruding surface. After the substrate 2 reaches the positioning, the isolation door 13 is returned. Go to the position and achieve a good sealing effect by sealing the rubber ring 3.

Continuing the above, in the target holder 141 and the first housing chamber At least one sealing rubber ring 3 can also be placed between 11. In the present creation, the target holder 141 needs to be replaced in the process to achieve multi-layer film sputtering, and in order to avoid insufficient adhesion after the target holder 141 is disassembled, the target holder 141 and the first At least one sealing rubber ring 3 is installed between the accommodating chambers 11. The number of sealing rubber rings 3 can be increased as needed. Since the sealing rubber ring 3 is inexpensive, the replacement is easy, and when it is implemented, the number can be selectively increased without affecting the cost. However, the life of the sealing rubber ring 3 is not long, and the warranty time must be set to be periodically replaced to maintain the quality.

In fact, in order to increase the vacuum effect, the present invention further provides a technical feature, please refer to Figure 5, which is a schematic diagram of installing a vacuum pipeline for the inventive isolation door. The isolation door 13 has two gates 131 to which a vacuum line 132 is connected between the gates 131 for connection to vacuum pumping. Thus, the vacuum is also applied between the two gates 131 to increase the vacuum of the process chamber and to reduce the vacuum force required to reduce the gate, which can simplify the gate pressure.

As for the materials selected for the present invention, the internal materials of the first accommodating chamber 11 and the second accommodating chamber 12 may be selected from stainless steel or aluminum alloy to reduce gas escape. It should be emphasized that the volume of the first accommodating chamber 11 and the second accommodating chamber 12 is not large, and only the substrate 2 can be accommodated. In the present invention, the substrate 2 is mostly tetragonal. The panel used for the circle or the mobile phone is not of a large size. Therefore, the first housing chamber 11 and the second housing chamber 12 can achieve an excellent sealing effect by the selection of the mating material.

Please refer to Figure 6 for a single magnetron target multilayer film sputtering Schematic diagram of substrate transfer of the system. As shown in the figure, the first accommodating chamber 11 and the second accommodating chamber 12 each include a conveying device 15 for carrying the substrate 2, and when the isolation door 13 is opened, in the first accommodating chamber The substrate 2 of the substrate 2 can be transported by the transport device 15 to the second accommodating chamber 12, and the substrate 2 at the second accommodating chamber 12 can be transported by the transport device 15 to the first accommodating chamber 11. The conveying device 15 provided by the present invention is only one of the conveying modes, and the transportation mode having the same function should be within the scope of the present creation.

In order to apply the extended implementation state, this creation provides the first expansion. Embodiments and second expanded embodiment. Please refer to Figure 7A for a first extended implementation of a single magnetron target multilayer film sputtering system. A third accommodating chamber 15 is disposed beside the first accommodating chamber 11 , and a sputtering target 14 is disposed above the third accommodating chamber 15 . Further, an isolation door 13 is disposed in the first accommodating chamber 11 and Between the third accommodating chambers 15. In addition, as shown in FIG. 7B, a second extended embodiment of a single magnetron target multi-layer film sputtering system is created. A third accommodating chamber 15 is disposed beside the second accommodating chamber 12, and a sputtering target 14 is disposed above the third accommodating chamber 15. Further, an isolation door 13 is disposed in the second accommodating chamber 12 and Between the third accommodating chambers 15. The expanded embodiment of the present invention is mainly applied to a multi-layer coating for rapidly performing two kinds of high and low media, such as an optical film. Therefore, two process chambers are used, and the third accommodating chamber 15 is disposed in the first accommodating chamber 11 or The side of the second accommodating chamber 12 is not limited as required. However, between the accommodating chambers, an isolation door 13 is required to ensure the vacuum quality.

After the above detailed description, the structure and technical features of the present invention have been known. It can be seen that the sputtering system of the present invention uses two accommodating chambers, so that the substrate can form a first film in one of the accommodating chambers. Waiting for the target replacement in another housing chamber reduces the time for vacuuming; and because the volume of the housing chamber is small, the gas is not easily dissipated, which can maintain a better vacuum effect, thereby providing superior product yield.

The above detailed description is for the specific description of the presently applicable embodiments, and the embodiments are not intended to limit the scope of the patents of the present invention, and the equivalent implementations or changes that are not departing from the spirit of the present invention should be included in the patents of the present invention. In the scope.

1‧‧‧Single magnetron target multilayer film sputtering system

11‧‧‧First accommodation room

12‧‧‧Second accommodation room

13‧‧‧Isolation door

14‧‧‧Splating target

2‧‧‧Substrate

3‧‧‧ Sealing rubber ring

Claims (13)

A single magnetron target multi-layer film sputtering system includes: a first accommodating chamber; a second accommodating chamber disposed on one side of the first accommodating chamber; and an isolation door disposed at the first Between the accommodating chamber and the second accommodating chamber, when the isolation door is closed, the second accommodating chamber is in a sealed state; wherein, when the isolation door is opened, a base located in the first accommodating chamber Moving through the isolation door to the second accommodating chamber; wherein, when the isolation door is opened, a substrate located in the second accommodating chamber moves to the first accommodating chamber through the isolation door; and a splash a plating target disposed above the first accommodating chamber and covering the first accommodating chamber; wherein a substrate is disposed under the sputtering target when the substrate is received in the first accommodating chamber . The single magnetron target multi-layer film sputtering system according to the first aspect of the invention, wherein the first accommodating chamber and the second accommodating chamber are each connected to a vacuum pump. The single magnetron target multi-layer film sputtering system according to claim 2, wherein the vacuum pump is connected to the first accommodating chamber and the second accommodating chamber in any combination of the following: a seal Rubber, magnetic fluid And telescopic sleeves. The single magnetron target multilayer film sputtering system according to claim 1, wherein the sputtering target is applicable to DC sputtering, and comprises a target holder and a continuous sputtering target, wherein The DC sputtering target is disposed in the target holder, and the target holder is disposed on the first housing chamber. The single magnetron target multi-layer film sputtering system according to claim 1, wherein the sputtering target is applicable to radio frequency sputtering, and includes a target holder and an RF sputtering target, wherein The RF sputtering target is disposed in the target holder, and the target holder is mounted on the first housing chamber. The single magnetron target multilayer film sputtering system according to claim 1, wherein the sputtering target is applicable to magnetron sputtering, and comprises a target holder and a magnetron sputtering target. The magnetron sputtering target is disposed in the target holder, and the target holder is disposed on the first housing chamber. The single magnetron target multi-layer film sputtering system according to claim 1, wherein the two sides of the isolation door each have a sealing rubber ring, Increase the sealing effect when closing. The single magnetron target multi-layer film sputtering system of claim 1, wherein at least one sealing rubber ring is disposed between the target holder and the first housing chamber. The single magnetron target multi-layer film sputtering system according to claim 1, wherein the isolation gate has two gates, and a vacuum pipeline is connected between the gates for connecting the vacuum pump. The single magnetron target multi-layer film sputtering system according to the first aspect of the invention, wherein the inner material of the first accommodating chamber and the second accommodating chamber may be selected from the following: stainless steel, aluminum alloy. The single magnetron target multi-layer film sputtering system according to claim 1, wherein the first accommodating chamber and the second accommodating chamber each comprise a conveying device for carrying the substrate, when When the isolation door is opened, the substrate in the first accommodating chamber can be transported to the second accommodating chamber by the conveying device, and the substrate in the second accommodating chamber can be transported to the first accommodating device by the conveying device room. Single magnetron target multilayer film sputtering as described in claim 1 a system, wherein a third accommodating chamber is disposed beside the first accommodating chamber, and a sputtering target is disposed above the third accommodating chamber, and an isolation door is disposed in the first accommodating chamber and the Three accommodation rooms. The single magnetron target multi-layer film sputtering system according to claim 1, wherein a third accommodating chamber is disposed beside the second accommodating chamber, and a sputtering target is disposed above the third accommodating chamber. In addition, an isolation door is disposed between the second accommodation chamber and the third accommodation chamber.