TWM499652U - Improved light emitting diode device packaging structure - Google Patents

Abstract

The present invention is related to an improved light emitting diode device packaging structure, more particularly to a packaging structure that is different than or even opposite to prior packaging method for being manufactured, and is without gold wire bonding processes. The structure comprises: a transparent carrier; a semiconductor chip on a surface of the transparent carrier, wherein the semiconductor chip has a light-injection surface and at least two electrodes, the two electrodes being formed on a surface of the semiconductor chip that is opposite to another surface of the semiconductor chip, wherein the another surface of the semiconductor chip is adjacent to the surface of the transparent carrier, the light-injection surface being on the another surface of the semiconductor chip, wherein light from the semiconductor chip is through the another surface of the semiconductor chip and the transparent carrier; an insulator on the transparent carrier in order to partially cover the two electrodes, the semiconductor chip and the transparent carrier; and at least two metal wire portions on two surfaces of the two electrodes, wherein the two metal wire portions respectively and electrically connect with the two electrodes.

Description

Improved LED package structure

The present invention relates to an improved LED package method and structure, and more particularly to a package process and structure that utilizes a different or even opposite package process than conventional techniques, and which breaks away from the conventional gold wire bonding process.

A light emitting diode (LED) is a semiconductor electronic component capable of emitting light, and has the advantages of energy saving, power saving, high efficiency, fast reaction time, long life cycle time, mercury-free, and environmental benefits. It has been widely used in lighting in recent years. In general, LED packaging requires not only the protection of LED chips, but also the special requirements, packaging methods and structures on materials such as light transmission.

In general packaging technology, an opaque patterned substrate is used to carry an LED chip and an electrode, and the LED chip is electrically connected to the electrode by a metal wire, and the entire wafer and the metal wire are covered with a transparent material on the opaque substrate and the wafer. And the opaque substrate is cured to form a completed package. Since the package must use a transparent material to facilitate the emission of light and the function of a lens, an opaque metal material having a better heat dissipation effect cannot be used. Therefore, heat dissipation of the LED chip must be performed through the opaque patterned substrate. But in the conventional technology, it is impervious The patterned substrate is generally made of a non-metallic material such as an epoxy molding compound or aluminum oxide (Al 2 O 3 ), resulting in poor heat dissipation of the LED chip wrapped between the substrate and the encapsulating material layer. At the same time, since the metal wire is located in the packaging material, the thermal expansion and contraction of the packaging material may also cause breakage or displacement of the metal wire, resulting in problems such as poor contact.

6A and 6B show two structures produced according to a conventional packaging method, the only difference being the presence or absence of the insulator structure and the difference in the shape of the encapsulating material layer formed after the transparent material is cured.

As shown in FIG. 6A, the opaque patterned substrate 111 has electrodes 112, LED dies 113, and metal wires 114. In order to enable the transparent encapsulation layer material to be completely filled over the opaque patterned substrate 111, the electrode 112 is included. In the space of the LED die 113 and the metal wire 114, the bracket 115 is formed on the opaque patterned substrate 111 and surrounds the LED die 113, thus forming a space to fill the transparent encapsulation layer material, which is cured to form a transparent encapsulation layer 116 to complete the encapsulation. . However, the resulting structure is not only the same as the foregoing problem, because the bracket 115 must be higher than the LED die 113 so that the transparent encapsulating layer material covers the LED die 113 to achieve the effect of the lens and the protection, and must also be higher than The metal wire 114 can protect its structure, resulting in a certain size limitation after packaging.

As shown in FIG. 6B, the opaque patterned substrate 121 has electrodes 122, LED chips 123, and metal wires 124, and is molded to form a circular transparent encapsulating layer 126, thereby avoiding the cost of forming the bracket. The arc-shaped structure of the transparent encapsulation layer 126 can be used to adjust the angle at which the light is emitted. However, the resulting structure is still difficult to avoid problems such as poor heat dissipation of the LED chip, breakage or displacement of the metal wire, and poor contact, and the LED package 123 and the metal must be completely covered in the transparent encapsulation layer 126. In the above case, the wire 123 needs to be formed according to the angle of the desired light to form a sufficient curvature, etc., and the size after the package is inevitably unable to be further limited. In line with the advancement of technology, in addition to product quality and stability, while pursuing the trend of light, thin, short and small, how to solve the above problems to improve product quality and stability, while reducing the package size, is to explore this new model Question.

The present invention provides an improved light emitting diode package structure that is manufactured in a packaging process that is different or even opposite to the prior art and that detaches the traditional Gold Wire Bonding Processes to avoid conventional knowledge. The metal wire produced by the technology has problems such as fracture or displacement, poor contact, large volume after packaging, extra gold wire cost and complicated production process leading to high production cost.

The present invention provides an improved light-emitting diode package structure which does not require a substrate provided in the prior art and is replaced by a transparent substrate which directly has the effect of a carrier and, because of transparency, It also has the lens effect after packaging, and because it is a glass transmission medium, its light transmittance is higher than that of the conventional silicone glue or epoxy resin after curing; The structure has no metal wire of the prior art, and there is no problem that the metal wire breaks, so the quality of the creation is relatively stable.

An improved light emitting diode package structure includes: a transparent substrate; an optoelectronic semiconductor wafer having a light emitting surface and at least two electrodes, the two electrodes being formed on one side of the optoelectronic semiconductor wafer adjacent to the transparent substrate An opposite surface, the light emitting surface is located on the surface of the optoelectronic semiconductor wafer adjacent to the transparent substrate; an insulating layer is formed on the transparent substrate, partially covering the surface a second electrode, the optoelectronic semiconductor wafer and the transparent substrate; and at least two metal wiring portions are formed separately on the two electrodes and electrically connected to the two electrodes respectively; wherein the light emitted by the optoelectronic semiconductor chip is transmitted through The transparent substrate is emitted.

21‧‧‧Transparent substrate

21t‧‧‧ surface

22‧‧‧Optoelectronic semiconductor wafer

22b‧‧‧Glossy

23‧‧‧Insulator structure

24‧‧‧Insulation

25‧‧‧lithography process

26‧‧‧metal layer

26a‧‧‧Metal wiring department

111, 121‧‧‧ opaque patterned substrate

112, 122‧‧‧ electrodes

113, 123‧‧‧ grain

114, 124‧‧‧Metal wires

115‧‧‧ bracket

116, 126‧‧ ‧ transparent encapsulation layer

211‧‧‧Transparent long cube

212‧‧‧Transparent trapezoidal cube

213‧‧‧Transparent arc face

221, 222‧‧‧ electrodes

261, 262‧ ‧ separate zone

The above and other objects, features, and advantages of the present invention will become more apparent and understood. Detailed description of the preferred embodiments and the accompanying drawings FIG. 2 is a schematic diagram of a package structure of an improved LED package according to the present invention; FIG. 3A-3G is a schematic diagram of a corresponding step of a package method of the improved LED package structure of the present invention. 4A-4C and 5A-5C are schematic structural views of different embodiments of the present invention; and FIGS. 6A-6B are side views of the second package structure of the prior art.

This creation is to provide an improved LED package structure to reduce volume, speed up production, increase yield and stabilize product quality after use. The above and other objects, features and advantages of the present invention will become more apparent and understood.

Please refer to FIG. 1 and FIG. 2 at the same time, which is a flow chart of the packaging method of the improved LED package structure of the present invention and an improved LED package structure diagram of the present invention. As shown, the improved LED package method includes The following steps: (S1) providing a transparent substrate 21 having high transparency, wherein the transparent substrate 21 is made of glass, and may be a long cube, a trapezoidal cube, or a curved cube to modify the optoelectronic semiconductor The radiation angle of the light emitted from the wafer 22; (S2) forming an optoelectronic semiconductor wafer 22 on one side of the transparent substrate 21, the optoelectronic semiconductor wafer 22 may be a light-emitting diode wafer, and has a light-emitting surface 22b and two electrodes 221, 222 The two electrodes 221, 222 are formed on an opposite side of the surface of the optoelectronic semiconductor wafer 22 adjacent to the transparent substrate 21. The light exiting surface 22b is located on the surface of the optoelectronic semiconductor wafer 22 adjacent to the transparent substrate 21, wherein the optoelectronic semiconductor wafer 22 is adjacent to the transparent substrate 21. The light emitted from the semiconductor wafer 22 is emitted through the transparent substrate 21; (S3) an insulator structure 23 is formed on the transparent substrate 21 to surround the optoelectronic semiconductor wafer 22, wherein the insulator structure 23 can be used as follows. One way is disposed on the transparent substrate: printing, Dispensing, and Lithography; (S4) forming an insulating layer 24 on the transparent substrate 21 Forming at least two metal wiring portions 26a on the two electrodes 221, 222 separately from the two electrodes 221, 222, the optoelectronic semiconductor wafer 22 and the transparent substrate 21; and (S5), and the two metal wiring portions 26a and the second The electrodes 221, 222 are electrically connected.

The method and structure described above are one of the first method embodiments of the present invention and the first structural embodiment produced by the first method embodiment. However, the step (S3) may also be omitted to produce an improved light emitting diode package structure without the insulator structure 23, thereby forming a second method embodiment and a method generated by using the second method embodiment. Second structural embodiment.

The technical content of this creation will be described in more detail below. Please refer to FIG. 3A-3G, which is a schematic structural diagram of the steps of the packaging method of the improved LED package structure. First, as shown in FIG. 3A, a transparent substrate 21 having high transparency is provided, which can be made of transparent glass and transparent. Alum, epoxy, polyoxyn, polyimide, quartz, or other suitable transparent material. Although the cross-sectional shape shown in Figure 2A is rectangular, it can be adjusted according to the needs of the angle of the emitted light. For example, the side profile may also have a plurality of repeated trapezoids, a plurality of repeated hemispheres, a plurality of repeated arcs, etc., and the overall shape may be adjusted or combined according to requirements. Next, as shown in FIG. 3B, on the surface 21t of the transparent substrate 21, at least two light-emitting optoelectronic semiconductor wafers 22 are placed thereon, so that the light-emitting surface 22b of the optoelectronic semiconductor wafer 22 is adjacent to the surface 21t of the transparent substrate 21, and The optoelectronic semiconductor wafers 22 have positive and negative electrodes 221 and 222, respectively, and are located on the surface 22t of the optoelectronic semiconductor wafer 22. As shown in FIG. 3B, the electrodes 221 and 222 are located on the opposite faces 22t of the adjacent faces of the optoelectronic semiconductor wafer 22 and the transparent substrate 21. The optoelectronic semiconductor wafer 22 can be a general light emitting diode (LED) die (Die).

Thereafter, as shown in FIG. 3C-1, the spacer structure 23 is selectively formed on the surface 21t of the transparent substrate 21 as a first structural embodiment, and the insulator structure 23 surrounds and surrounds the optoelectronic semiconductor wafer 22, The insulating layer 24 is further formed on the surface 21t of the transparent substrate 21, and is filled between the insulator structure 23 and the optoelectronic semiconductor wafer 22, and the height of the insulator structure 23 and the insulating layer 24 on the surface 21t of the transparent substrate 21 is approximately the same. The semiconductor wafer 22 (including the electrodes 221 and 222) has the same height on the surface 21t of the transparent substrate 21, or is slightly higher than the height of the optoelectronic semiconductor wafer 22 (including the electrodes 221 and 222) on the surface 21t of the transparent substrate 21, that is, The insulating layer 24 covers at least the surface 21t of the transparent substrate 21 and the side surface of the optoelectronic semiconductor wafer 22 perpendicular to the surface 21t. In addition to protecting the optoelectronic semiconductor wafer 22, the insulator structure 23 can also be used as a reflective layer for collecting light emitted from the sides of the die and the interface, reflecting or refracting at a desired direction. Although the insulator structure 23 shown in FIG. 3C-1 has a rectangular cross section, the shape can be changed as needed, such as a trapezoid, etc., and the material and the The transparent substrate 21 may be a transparent or non-transparent material, including a glass material, a silicone resin, a polyester material, an oxide, a nitride, etc., and the process may include spin coating, lithography, printing, chemical vapor phase. Deposition (CVD), lithography, and the like. The material of the insulating layer 24 may be a photoresist material, a polyester, an oxide, a metal oxide, a nitride, etc., and may be formed by lamination, dispensing, and spraying. ), coating, and the like are formed. Alternatively, as shown in FIG. 3C-2, the insulating layer 24 is formed directly, that is, the second structural embodiment, the insulating layer 24 is adjacent to the optoelectronic semiconductor wafer 22 and covers the surface 21t of the transparent substrate 21. For convenience of description, as shown in FIG. 3C-2, the insulating layer 24 is directly formed, and the embodiments of the covering electrodes 221 and 222, the optoelectronic semiconductor wafer 22 and the transparent substrate 21 are taken as an example for subsequent process description.

The formation of the insulator structure 23 may be a part of the transparent substrate 21 in addition to the method described above, such as being integrally formed with the transparent substrate 21. The resulting structural cross-section of the process will also be isolated as shown in FIG. 3C-1. The material of the body structure 23 is also the same as that of the transparent substrate 21, and the formation of the insulator structure 23 is not required.

As shown in FIG. 3D, the original insulating layer 24 is subjected to a lithography 25 to form a patterned insulating layer 24a, and the electrodes 221 and 222 are exposed outside the patterned insulating layer 24a, corresponding to the top view of FIG. 3D. The structure is shown in Fig. 3D(a), and only two optoelectronic semiconductor wafers 22 on the transparent substrate 21 are depicted in Fig. 3D(a) for illustrative purposes. Then, a metal layer 26 is formed, as shown in FIG. 3E, overlying the optoelectronic semiconductor wafer 22 and the patterned insulating layer 24a, on the surface 21t of the transparent substrate 21, and electrically connected to the positive and negative electrodes 221 and 222 of all the optoelectronic semiconductor wafers 22. The metal layer 26 is then patterned such that the metal layer 26 forms a separate at least two metal pattern (not shown in the figure), and each metal pattern is only one electric Extremely electrically connected as a seed layer for subsequent wiring processes. Plating is then performed to thicken the patterned metal layer 26 to form the metal wiring portion 26a as shown in FIG. 3F. 3F(a) is a plan view corresponding to the structure of FIG. 3F, the metal wiring portions 26a are separated from each other on the different electrodes 221 and 222 to form a separation region 261, and are formed between adjacent different optoelectronic semiconductor wafers 22. Separation zone 262.

Finally, as shown in FIG. 3G, a dicing is performed along the separation region 262 to separate the different optoelectronic semiconductor wafers 22 to complete the encapsulation.

The package structure produced by the above packaging process step provided by the present invention comprises at least a transparent substrate 21, and an optoelectronic semiconductor wafer 24 having positive and negative electrodes 221 and 222 on the surface 21t of the transparent substrate 21, on the surface 21t of the transparent substrate 21. And a patterned insulating layer 24a surrounding and covering the side of the optoelectronic semiconductor wafer 24, and two metal wiring portions 26a separated from each other on the positive and negative electrodes 221 and 222 are formed on the surface of the positive and negative electrodes 211 and 222 away from the side of the transparent substrate 21. .

Moreover, according to the above-described packaging process provided by the present invention, the prior patterning process of the transparent substrate 21 is not necessary, and the labor and cost are saved compared with the prior art in which the patterned substrate 111 or 121 must be used. Of course, depending on the direction angle of the light to be emitted, the present invention may also perform a patterning process on the transparent substrate 21 before the packaging process, for example, patterning the transparent substrate 21 so as to be cut into a trapezoidal shape, an arc shape, or the like. Semi-circular, etc., the overall shape is a trapezoidal cube, a curved body, a hemisphere, etc., which can be changed according to actual needs, and is different from the two fixed patterns in the conventional process. 4A-4C and 5A-5C are different implementations of the above-described packaging process according to the present invention, which are combined with different requirements, such as the angle of the radiation and the angle of view of the light to be emitted, and the presence or absence of the structure of the insulator. / or shape. The implementation aspects of Figures 4A-4C are not isolated. The body structure, that is, the embodiment derived from the second structural embodiment; and the embodiment of FIGS. 5A-5C each have a rectangular body structure 23, which is an embodiment derived from the first structural embodiment. In the embodiment shown in FIG. 4A and FIG. 5A, the transparent substrate 21 is not patterned, so that the package structure formed after the dicing has a transparent rectangular parallelepiped 211 to modify the radiation emitted by the optoelectronic semiconductor wafer. The angle of view of the angle; in the embodiment shown in FIGS. 4B and 5B, the transparent substrate 21 has been patterned, so that the package structure formed after cutting has a transparent trapezoidal cube 212 to modify the photoelectric semiconductor wafer to be emitted. The angle of view of the radiation angle of the light; and in the embodiment shown in FIGS. 4C and 5C, the transparent substrate 21 has been patterned, so that the package structure formed after cutting has a transparent circular surface body 213 to be modified. The field of view of the angle of radiation of the light emitted by the optoelectronic semiconductor wafer. The above embodiments and illustrations are for illustrative purposes only and are not intended to limit the creation. The shape of the transparent substrate 21, the presence or absence of the structure of the insulator, and/or the shape may be optimally adjusted according to actual needs.

According to the above packaging process and structure provided by the present invention, the transparent substrate 21 has the function of a lens in addition to the photo-electric semiconductor wafer 22, and in the prior art, the substrate and the lens must be separated separately, and the optoelectronic semiconductor wafer 22 can be adjusted to be emitted. The direction of the light does not have to increase the thickness and size of the product, saving cost and man-hours, and reducing the size of the package structure compared to conventional techniques. The thermal energy generated during the operation of the packaged wafer can also be dissipated by the metal wiring portion 26a of the optoelectronic semiconductor wafer 22, thereby solving the problem of poor heat dissipation in the prior art. Moreover, since the metal wiring portion 26a of the present invention is directly electrically connected to the electrodes 221 and 222, no additional metal wires are required, and in addition to saving material cost, the metal wires can be prevented from being broken or displaced at the same time, resulting in poor contact and product quality. Unstable and other issues, improve product yield and accelerate production.

Although the present invention has been disclosed above by way of example, it is not intended to limit the present invention. Anyone with ordinary knowledge in the field can make some changes and refinements without departing from the spirit and scope of this creation. Therefore, the scope of protection of this creation is subject to the definition of the scope of the patent application attached.

21‧‧‧Transparent substrate

22‧‧‧Optoelectronic semiconductor wafer

221, 222‧‧‧ electrodes

22b‧‧‧Glossy

23‧‧‧Insulator structure

24‧‧‧Insulation

26a‧‧‧Metal wiring department

Claims (10)

An improved light emitting diode package structure includes: a transparent substrate; an optoelectronic semiconductor wafer having a light emitting surface and at least two electrodes, the two electrodes being formed on one side of the optoelectronic semiconductor wafer adjacent to the transparent substrate a surface of the optoelectronic semiconductor wafer adjacent to the transparent substrate; an insulating layer formed on the transparent substrate, partially covering the two electrodes, the optoelectronic semiconductor wafer and the transparent substrate; and at least two The metal wiring portions are formed separately on the two electrodes and electrically connected to the two electrodes. The light emitted from the photoelectric semiconductor wafer is emitted through the transparent substrate. The improved light emitting diode package structure of claim 1, wherein the transparent substrate is made of glass. The improved light emitting diode package structure of claim 1, wherein the transparent substrate is a long cube to modify a radiation angle of light emitted by the optoelectronic semiconductor wafer. The improved light emitting diode package structure of claim 1, wherein the transparent substrate is a trapezoidal cube to modify a radiation angle of the light emitted by the optoelectronic semiconductor wafer. The improved light emitting diode package structure of claim 1, wherein the transparent substrate is a curved cube to modify a radiation angle of the light emitted by the optoelectronic semiconductor wafer. The improved LED package structure of claim 1 further has an insulator structure, the spacer A permanent structure is formed outside the insulating layer to surround the optoelectronic semiconductor wafer. The improved light emitting diode package structure of claim 6 has a transparent substrate, and the transparent substrate is a long cube to modify the radiation angle of the light emitted by the optoelectronic semiconductor wafer. The improved light emitting diode package structure of claim 6 has a transparent substrate which is a trapezoidal cube to modify the radiation angle of the light emitted from the optoelectronic semiconductor wafer. The improved light emitting diode package structure of claim 6 has a transparent substrate which is a curved cube to modify the radiation angle of the light emitted by the optoelectronic semiconductor wafer. The improved LED package structure of claim 6, wherein the insulator structure can be disposed on the transparent substrate in any of the following manners: printing, dispensing, and lithography (Lithography). ).