TWM498964U - Solar cell structure - Google Patents

Solar cell structure Download PDF

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Publication number
TWM498964U
TWM498964U TW103218288U TW103218288U TWM498964U TW M498964 U TWM498964 U TW M498964U TW 103218288 U TW103218288 U TW 103218288U TW 103218288 U TW103218288 U TW 103218288U TW M498964 U TWM498964 U TW M498964U
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Taiwan
Prior art keywords
solar cell
cell structure
bus bar
electrode
gap
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TW103218288U
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Chinese (zh)
Inventor
Yu-Hui Liu
Chung-Lun Yeh
Cheng-Kai Huang
Jen-Ho Kang
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Tsec Corp
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Application filed by Tsec Corp filed Critical Tsec Corp
Priority to TW103218288U priority Critical patent/TWM498964U/en
Priority to CN201420777355.7U priority patent/CN204558478U/en
Publication of TWM498964U publication Critical patent/TWM498964U/en

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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

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  • Photovoltaic Devices (AREA)

Abstract

A solar cell structure includes a semiconductor substrate, a doped emitter layer on a front side of the substrate, an antireflection layer on the doped emitter layer, and a front bus bar on the antireflection layer. The front bus bar extends along a first direction. At least one gap is disposed on the front bus bar.

Description

太陽能電池結構Solar cell structure

本創作係有關於一種太陽能電池技術領域,特別是有關一種具有改良的正面匯流排電極設計的太陽能電池結構。The present invention relates to the field of solar cell technology, and more particularly to a solar cell structure having an improved front bus bar electrode design.

已知,太陽能電池的工作原理係利用太陽光之輻射能源與半導體材料作用來產生電能,主要材料包括有半導體材料,如單晶矽、多晶矽、非晶矽之矽基板或III-V族化合物之半導體材料等,以及用來作為電極之導電膠,例如,銀膠或鋁膠等。It is known that the working principle of solar cells is to use solar radiation energy and semiconductor materials to generate electrical energy. The main materials include semiconductor materials such as single crystal germanium, polycrystalline germanium, amorphous germanium germanium or III-V compound. A semiconductor material or the like, and a conductive paste used as an electrode, for example, a silver paste or an aluminum paste.

太陽能電池的製造方法通常先進行晶圓表面清潔與粗糙化處理,然後進行擴散製程,在晶圓表面形成磷玻璃層及摻雜射極(emitter)區域,以蝕刻製程去除磷玻璃層後,再形成抗反射層,然後,利用網印技術於電池正、背面以金屬漿料網印出電極圖案,然後進行高溫燒結,形成電極。最後,進行串焊將電池單元串接成模組。The solar cell manufacturing method usually performs wafer surface cleaning and roughening treatment, and then performs a diffusion process to form a phosphor glass layer and an emitter emitter region on the surface of the wafer, and then remove the phosphor glass layer by an etching process, and then An anti-reflection layer is formed, and then an electrode pattern is printed on the metal paste web on the front and back sides of the battery by screen printing, and then sintered at a high temperature to form an electrode. Finally, string welding is performed to connect the battery cells in series.

然而,習知電池結構中,由於光線會被電池表面的電極(指電極及匯流排電極)所遮蔽,因而使得照射到電極區域的光線無法被有效利用。因此,該技術領域仍須要一種改良的太陽能電池結構,以解決上述先前技藝之不足與缺點。However, in the conventional battery structure, since light is blocked by the electrodes (finger electrodes and bus bar electrodes) on the surface of the battery, light rays irradiated to the electrode regions cannot be effectively utilized. Accordingly, there remains a need in the art for an improved solar cell structure to address the deficiencies and shortcomings of the prior art described above.

本創作之主要目的在提供一種改良的太陽能電池結構,能夠增加電池的受光面積,提升短路電流(Isc),進而增加光電轉換效率。The main purpose of this creation is to provide an improved solar cell structure that can increase the light receiving area of the battery, increase the short circuit current (Isc), and thereby increase the photoelectric conversion efficiency.

根據本創作另一實施例,本案提供一種太陽能電池結構,包含有一半導體基板;一摻雜射極層,設於該半導體基板的正面;一抗反射層,設 於該摻雜射極層上;以及至少一正面匯流排電極,設於該抗反射層上,沿著一第一方向延伸,其中該正面匯流排電極上設有至少一間隙。According to another embodiment of the present invention, the present invention provides a solar cell structure including a semiconductor substrate; a doped emitter layer disposed on a front surface of the semiconductor substrate; and an anti-reflection layer On the doped emitter layer; and at least one front bus bar electrode is disposed on the anti-reflective layer and extends along a first direction, wherein the front bus bar electrode is provided with at least one gap.

根據一實施例,其中該間隙將該正面匯流排電極斷開,構成一不連續的正面匯流排電極。According to an embodiment, wherein the gap breaks the front bus bar electrode to form a discontinuous front bus bar electrode.

根據一實施例,其中另包含有至少一指電極,沿著一第二方向延伸,且該第一方向垂直該第二方向。根據一實施例,其中該指電極通過該間隙。According to an embodiment, the method further includes at least one finger electrode extending along a second direction, and the first direction is perpendicular to the second direction. According to an embodiment, wherein the finger electrode passes through the gap.

根據一實施例,其中於該正面匯流排電極上,另設置有一模組焊接材料層;以及一橋接部位,該橋接部位跨越該間隙,以連接該模組焊接材料層。According to an embodiment, a module solder material layer is further disposed on the front bus bar electrode; and a bridging portion spans the gap to connect the module solder material layer.

根據一實施例,其中另包含有至少一背面匯流排電極,設於該半導體基板的背面。According to an embodiment, at least one back bus bar electrode is further disposed on the back surface of the semiconductor substrate.

根據一實施例,其中另包含有一接觸電極,設於該半導體基板的背面。According to an embodiment, a contact electrode is further disposed on the back surface of the semiconductor substrate.

根據本創作另一實施例,一種太陽能電池結構,包含有一半導體基板;一摻雜射極層,設於該半導體基板的正面;一抗反射層,設於該摻雜射極層上;至少一正面匯流排電極,設於該抗反射層上,沿著一第一方向延伸,其中該正面匯流排電極上設有至少一間隙;以及至少一架橋,位於該間隙。其中該架橋的寬度介於0.1至1.0mm。其中另包含有至少一指電極,沿著一第二方向延伸,且該第一方向垂直該第二方向。其中該指電極與該架橋相連。According to another embodiment of the present invention, a solar cell structure includes a semiconductor substrate; a doped emitter layer disposed on a front surface of the semiconductor substrate; and an anti-reflection layer disposed on the doped emitter layer; at least one The front bus bar electrode is disposed on the anti-reflection layer and extends along a first direction, wherein the front bus bar electrode is provided with at least one gap; and at least one bridge is located at the gap. The bridge has a width of 0.1 to 1.0 mm. The method further includes at least one finger electrode extending along a second direction, and the first direction is perpendicular to the second direction. Wherein the finger electrode is connected to the bridge.

為讓本創作之上述目的、特徵及優點能更明顯易懂,下文特舉較佳實施方式,並配合所附圖式,作詳細說明如下。然而如下之較佳實施方式與圖式僅供參考與說明用,並非用來對本創作加以限制者。The above described objects, features and advantages of the present invention will become more apparent from the following description. However, the following preferred embodiments and drawings are for illustrative purposes only and are not intended to limit the present invention.

1‧‧‧太陽能電池結構1‧‧‧Solar cell structure

1a‧‧‧太陽能電池結構1a‧‧‧Solar cell structure

1b‧‧‧太陽能電池結構1b‧‧‧Solar cell structure

10‧‧‧半導體基板10‧‧‧Semiconductor substrate

12‧‧‧摻雜射極層12‧‧‧Doped emitter layer

14‧‧‧抗反射層14‧‧‧Anti-reflective layer

24‧‧‧正面匯流排電極24‧‧‧ Positive bus bar electrode

25‧‧‧背面匯流排電極25‧‧‧Backside bus electrode

26‧‧‧接觸電極26‧‧‧Contact electrode

36‧‧‧指電極36‧‧‧ finger electrodes

44‧‧‧模組焊接材料層44‧‧‧Modular welding material layer

126‧‧‧背面電場層126‧‧‧Back surface layer

242‧‧‧間隙242‧‧‧ gap

244‧‧‧架橋244‧‧‧ Bridge

442‧‧‧橋接部442‧‧‧Bridge

S1‧‧‧正面S1‧‧ positive

S2‧‧‧背面S2‧‧‧Back

第1圖例示本創作太陽能電池結構的剖面圖。Fig. 1 is a cross-sectional view showing the structure of the solar cell of the present invention.

第2圖例示本創作太陽能電池結構的正面的匯流排電極及指電極。Fig. 2 illustrates a bus bar electrode and a finger electrode on the front side of the solar cell structure of the present invention.

第3圖以局部放大側視圖例示由模組焊接材料層構成的鏤空結構。Fig. 3 is a partially enlarged side view showing a hollow structure composed of a layer of a solder material of a module.

第4圖及第5圖例示為本創作的其它變化型態。Figures 4 and 5 illustrate other variations of the present creation.

請參閱第1圖,其例示本創作太陽能電池結構的剖面圖。如第1圖所示,太陽能電池結構1包含有半導體層或半導體基板10,例如,P型摻雜矽基板或矽晶圓,其厚度例如約180-200微米左右。在半導體基板10的正面(受光面)S1另設有摻雜射極層12,例如,N型摻雜射極層,以及抗反射層14,例如氮化矽或氧化矽等。Please refer to FIG. 1 , which illustrates a cross-sectional view of the solar cell structure of the present invention. As shown in Fig. 1, the solar cell structure 1 includes a semiconductor layer or a semiconductor substrate 10, for example, a P-type doped germanium substrate or a germanium wafer having a thickness of, for example, about 180 to 200 μm. A doped emitter layer 12, for example, an N-type doped emitter layer, and an anti-reflection layer 14, such as tantalum nitride or hafnium oxide, are additionally provided on the front surface (light-receiving surface) S1 of the semiconductor substrate 10.

此外,半導體基板10的正面S1另設有正面匯流排電極24。在半導體基板10的背面S2設有背面匯流排電極25、背面電場層126及接觸電極26。熟習該項技藝者應理解上述結構僅為例示,本創作亦可適用於其它太陽能電池結構。Further, the front surface S1 of the semiconductor substrate 10 is additionally provided with a front bus bar electrode 24. A back surface bus electrode 25, a back surface electric field layer 126, and a contact electrode 26 are provided on the back surface S2 of the semiconductor substrate 10. Those skilled in the art will appreciate that the above structure is merely illustrative and that the present invention is also applicable to other solar cell structures.

如前所述,習知電池結構中,由於光線會被電池正面S1的正面匯流排電極24所遮蔽,因而使得照射到電極區域的光線無法被有效利用。為解決這樣的問題,本創作於是提出一種改良的正面匯流排電極設計。As described above, in the conventional battery structure, since light is blocked by the front bus bar electrode 24 of the battery front surface S1, light irradiated to the electrode region cannot be effectively utilized. In order to solve such problems, the present invention proposes an improved front bus bar electrode design.

首先,如第2圖所示,在太陽能電池結構1的正面S1先網印形成正面匯流排電極24以及指電極36,其中,通常是以銀漿網印形成正面匯流排電極24以及指電極36。正面匯流排電極24的數量不限制,可以是兩條、3條或4條,彼此平行,沿著第一方向延伸,而較細的指電極36則是沿著第二方向延伸,其中第一方向垂直第二方向。First, as shown in FIG. 2, the front bus bar electrode 24 and the finger electrode 36 are first screen printed on the front surface S1 of the solar cell structure 1. The front bus bar electrode 24 and the finger electrode 36 are usually formed by silver paste screen printing. . The number of the front bus bar electrodes 24 is not limited, and may be two, three or four, parallel to each other, extending along the first direction, and the thinner finger electrodes 36 extending along the second direction, wherein the first The direction is perpendicular to the second direction.

根據本實施例,各正面匯流排電極24是不連續的,具有至少一間隙(gap)242,例如,在第2圖中各匯流排電極24上具有三個間隙242,將各匯流排電極24分成四個獨立段。根據本實施例,可以有至少一指電極36通 過所述間隙242。According to this embodiment, each of the front bus bar electrodes 24 is discontinuous and has at least one gap 242. For example, in the second figure, each of the bus bar electrodes 24 has three gaps 242, and each bus bar electrode 24 is provided. Divided into four separate segments. According to this embodiment, there may be at least one finger electrode 36 Through the gap 242.

根據本實施例,間隙242的寬度可以介於1根至10根指電極的寬度。According to this embodiment, the width of the gap 242 may range from 1 to 10 finger electrodes.

第3圖以局部放大側視圖例示本創作的另一技術特徵。如第3圖所示,同樣的,在太陽能電池結構1的正面S1網印正面匯流排電極24以及指電極36。正面匯流排電極24的數量不限制,可以是兩條、3條或4條,彼此平行,沿著第一方向延伸,而較細的指電極36則是沿著第二方向延伸,其中第一方向垂直第二方向。各正面匯流排電極24是不連續的,具有至少一間隙242。Fig. 3 illustrates another technical feature of the present creation in a partially enlarged side view. Similarly, as shown in FIG. 3, the front bus bar electrode 24 and the finger electrode 36 are screen printed on the front surface S1 of the solar cell structure 1. The number of the front bus bar electrodes 24 is not limited, and may be two, three or four, parallel to each other, extending along the first direction, and the thinner finger electrodes 36 extending along the second direction, wherein the first The direction is perpendicular to the second direction. Each of the front bus bar electrodes 24 is discontinuous and has at least one gap 242.

根據本實施例,太陽能電池結構1的不連續的正面匯流排電極24上另設置有一模組焊接材料層44,並透過跨越間隙242的橋接部位442連接。根據本實施例,橋接部位442與模組焊接材料層44係同時形成,一體成型的。According to the present embodiment, a discontinuous front bus bar electrode 24 of the solar cell structure 1 is further provided with a module solder material layer 44 and connected through a bridging portion 442 spanning the gap 242. According to this embodiment, the bridging portion 442 and the module solder material layer 44 are simultaneously formed and integrally formed.

於是,從第3圖可清楚看到,本創作透過間隙242以及跨越間隙242的橋接部位442構成一鏤空結構,如此使得太陽能模組的受光面積增加,進而達到提升光電轉換效率之目的。Therefore, it can be clearly seen from FIG. 3 that the creation constitutes a hollow structure through the gap 242 and the bridging portion 442 spanning the gap 242, so that the light receiving area of the solar module is increased, thereby achieving the purpose of improving the photoelectric conversion efficiency.

請參閱第4圖及第5圖,其為本創作的其它變化型態。Please refer to Figures 4 and 5, which are other variations of the creation.

如第4圖所示,太陽能電池結構1a與第2圖中的太陽能電池結構1的差異在於:太陽能電池結構1a的各間隙242設有架橋244,故太陽能電池結構1a的正面匯流排電極24是連續的。此外,架橋244可以設置在正面匯流排電極24的同側。其中,架橋244的寬度可以介於0.1至1.0mm。根據本實施例,指電極36可以與架橋244相連。As shown in FIG. 4, the solar cell structure 1a differs from the solar cell structure 1 of FIG. 2 in that each gap 242 of the solar cell structure 1a is provided with a bridge 244, so that the front bus bar electrode 24 of the solar cell structure 1a is continuously. Further, the bridge 244 may be disposed on the same side of the front bus bar electrode 24. The bridge 244 may have a width of 0.1 to 1.0 mm. According to this embodiment, the finger electrode 36 can be coupled to the bridge 244.

如第5圖所示,太陽能電池結構1b與第4圖中的太陽能電池結構1a的差異在於:太陽能電池結構1b架橋244係交替設置在正面匯流排電極24的不同側。As shown in Fig. 5, the solar cell structure 1b differs from the solar cell structure 1a of Fig. 4 in that the solar cell structure 1b bridges 244 are alternately disposed on different sides of the front bus bar electrodes 24.

以上所述僅為本創作之較佳實施例,凡依本創作申請專利範圍所做之均等變化與修飾,皆應屬本創作之涵蓋範圍。The above descriptions are only preferred embodiments of the present invention, and all changes and modifications made by the scope of the patent application of the present invention should be covered by the present invention.

1‧‧‧太陽能電池結構1‧‧‧Solar cell structure

10‧‧‧半導體基板10‧‧‧Semiconductor substrate

24‧‧‧正面匯流排電極24‧‧‧ Positive bus bar electrode

36‧‧‧指電極36‧‧‧ finger electrodes

44‧‧‧模組焊接材料層44‧‧‧Modular welding material layer

242‧‧‧間隙242‧‧‧ gap

442‧‧‧橋接部442‧‧‧Bridge

S1‧‧‧正面S1‧‧ positive

S2‧‧‧背面S2‧‧‧Back

Claims (11)

一種太陽能電池結構,包含有:一半導體基板;一摻雜射極層,設於該半導體基板的正面;一抗反射層,設於該摻雜射極層上;以及至少一正面匯流排電極,設於該抗反射層上,沿著一第一方向延伸,其中該正面匯流排電極上設有至少一間隙。 A solar cell structure comprising: a semiconductor substrate; a doped emitter layer disposed on a front surface of the semiconductor substrate; an anti-reflection layer disposed on the doped emitter layer; and at least one front bus bar electrode, The anti-reflection layer is disposed along a first direction, wherein the front bus bar electrode is provided with at least one gap. 如申請專利範圍第1項所述的太陽能電池結構,其中該間隙將該正面匯流排電極斷開,構成一不連續的正面匯流排電極。 The solar cell structure of claim 1, wherein the gap breaks the front bus bar electrode to form a discontinuous front bus bar electrode. 如申請專利範圍第1項所述的太陽能電池結構,其中另包含有至少一指電極,沿著一第二方向延伸,且該第一方向垂直該第二方向。 The solar cell structure of claim 1, further comprising at least one finger electrode extending along a second direction, wherein the first direction is perpendicular to the second direction. 如申請專利範圍第3項所述的太陽能電池結構,其中該指電極通過該間隙。 The solar cell structure of claim 3, wherein the finger electrode passes through the gap. 如申請專利範圍第1項所述的太陽能電池結構,其中於該正面匯流排電極上,另設置有:一模組焊接材料層;以及一橋接部位,該橋接部位跨越該間隙,以連接該模組焊接材料層。 The solar cell structure of claim 1, wherein the front bus bar electrode is further provided with: a module solder material layer; and a bridging portion, the bridging portion spans the gap to connect the die Set of layers of solder material. 如申請專利範圍第1項所述的太陽能電池結構,其中另包含有至少一背面匯流排電極,設於該半導體基板的背面。 The solar cell structure of claim 1, further comprising at least one back bus bar electrode disposed on a back surface of the semiconductor substrate. 如申請專利範圍第1項所述的太陽能電池結構,其中另包含有一接觸電極,設於該半導體基板的背面。 The solar cell structure of claim 1, further comprising a contact electrode disposed on a back surface of the semiconductor substrate. 一種太陽能電池結構,包含有:一半導體基板;一摻雜射極層,設於該半導體基板的正面;一抗反射層,設於該摻雜射極層上;至少一正面匯流排電極,設於該抗反射層上,沿著一第一方向延伸,其中該正面匯流排電極上設有至少一間隙;以及至少一架橋,位於該間隙。 A solar cell structure comprising: a semiconductor substrate; a doped emitter layer disposed on a front surface of the semiconductor substrate; an anti-reflection layer disposed on the doped emitter layer; and at least one front bus bar electrode disposed And extending on the anti-reflection layer along a first direction, wherein the front bus bar electrode is provided with at least one gap; and at least one bridge is located at the gap. 如申請專利範圍第8項所述的太陽能電池結構,其中該架橋的寬度介於0.1至1.0mm。 The solar cell structure of claim 8, wherein the bridge has a width of 0.1 to 1.0 mm. 如申請專利範圍第8項所述的太陽能電池結構,其中另包含有至少一指電極,沿著一第二方向延伸,且該第一方向垂直該第二方向。 The solar cell structure of claim 8, further comprising at least one finger electrode extending along a second direction, wherein the first direction is perpendicular to the second direction. 如申請專利範圍第10項所述的太陽能電池結構,其中該指電極與該架橋相連。 The solar cell structure of claim 10, wherein the finger electrode is connected to the bridge.
TW103218288U 2014-10-15 2014-10-15 Solar cell structure TWM498964U (en)

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