TWM498377U - Semiconductor manufacturing apparatus - Google Patents

Description

Semiconductor production machine

A semiconductor production device of the present invention, especially a semiconductor production machine integrating dry etching and wet etching.

Etching techniques currently used in the LCD process array and semiconductor related industries can be mainly divided into Wet Etching and Dry etching. The advantage of dry etching is that it has better performance for controlling minute structures, but its vacuum device has poor resistance to particles in the environment and products produced by process reactions. The advantages of wet etching are simple process and high production speed. Compared with high-quality etching options, however, since wet etching is a chemical etching, it is an isotropic etching, and there is a significant undercut after etching. Thus, it can be understood that dry etching and wet etching each have their own advantages and disadvantages.

In the conventional industry, dry etching and wet etching are performed separately. However, both dry etching and wet etching require a lot of manpower and cost, and the technical differences are enormous. Therefore, no one in the semiconductor field has thought of integrating the two processes. However, the author believes that if the two processes can be integrated, the advantages and disadvantages of dry etching and wet etching can be complemented, and the conventional process of only one wet etching or dry etching can be solved, and The problem of cost and time that cannot be matched with each other

The advantages and spirit of this creation can be further understood by the following detailed description and the accompanying drawings.

The main purpose of this creation is to provide a machine that can perform both wet etching and dry etching at the same time to solve the cost and time problem that traditional single wet etching or dry etching processes cannot be matched with each other.

The semiconductor production machine of the present invention includes a plurality of cassettes, a first transport device, at least one buffer zone, a wet etching system, a second transport device, a vacuuming region, and a third transport Device and a dry etching system. Wherein the plurality of cassettes accommodate a plurality of wafers to be etched, the first transport device is located at a periphery of the plurality of cassettes, and the first transport device can transport the plurality of wafers to be etched to the wafer a buffer, the wet etching system has a plurality of wet etch regions, and the first transport device transports the wafer to be etched in the buffer to the plurality of wet etch regions for wet etching; The transport device is located at the periphery of the wet etching system, and the second transport device can transport the wet etched wafer to the vacuuming region for vacuuming; the dry etching system is a vacuum region and has a plurality of a dry etched region, the third transport device is located at the periphery of the dry etch system, and can transport the wafer in the vacuumed region that has been in a vacuum state to and from the plurality of dry etch regions of the dry etch system For dry etching and dry etching, then transport to the next process.

In the semiconductor production machine as described above, the first transport device has at least one mechanical arm and at least one slide device that is slidable back and forth to capture the plurality of wafers to be etched into the buffer.

In the semiconductor production machine as described above, the second transport device or the third transport device is a robot arm.

In the semiconductor production machine as described above, the plurality of wet etched regions have wet etched regions of different formulation etchants.

Therefore, the semiconductor production machine described in the present invention can perform wet etching and dry etching repeatedly as many times as needed, so that it can be flexibly matched with various semiconductor production processes to solve the conventional single wet etching process. Or the process of dry etching, and the problem of cost and time that cannot be matched with each other.

In order to further understand the features and technical contents of the present invention, please refer to the following detailed description and drawings of the present invention. However, the drawings are only for reference and explanation, and are not intended to limit the creation. In order to further understand the features and technical contents of the present invention, please refer to the following detailed description and drawings of the present invention. However, the drawings are only for reference and description, and are not intended to limit the creation.

11, 12, 13, 14, 15, 16, 17, 18, 19‧‧ ‧ Carmen

2‧‧‧First transport device

21‧‧‧ Robotic arm

22‧‧‧Slide device

3‧‧‧buffer

4‧‧‧ Wet etching system

41, 42, 43, 44, 45, 46, 47, 48‧‧‧ Wet etched areas

5‧‧‧Second transport device

51‧‧‧ Robotic arm

52‧‧‧ Horizontal axis mobile device 52

53‧‧‧Vertical axis mobile device

6‧‧‧vacuum area

7‧‧‧ Third transport device

8‧‧‧dry etching system

81, 82, 83, 84, 85, 86, 87‧‧‧ dry etching zone

1 is a block diagram of a first embodiment of a semiconductor production machine of the present invention.

2 is a block diagram showing a second embodiment of the semiconductor production machine of the present invention.

Figure 3 is a block diagram of a third embodiment of the semiconductor production machine of the present invention.

<First Embodiment>

Please refer to FIG. 1 , which is a first embodiment of the semiconductor production machine of the present invention. Composition. The semiconductor production machine of the present invention comprises a plurality of cassettes 11, 12, 13, 14 , a first transport device 2, a buffer zone 3, a wet etching system 4, a second transport device 5, and a pumping device. A vacuum zone 6, a third transport device 7, and a dry etching system 8. The plurality of cassettes 11, 12, 13, and 14 are used to accommodate a plurality of wafers (not shown) to be etched. The first transport device 2 is located around the plurality of cassettes 11, 12, 13, 14 for pinching or transporting the plurality of wafers to be etched to the buffer zone 3. In a further embodiment, the first transport device 2 can be composed of a robot arm 21 and a slide rail device 22, so that the robot arm 21 can slide back and forth in the left and right directions through the rail device 22. The wafer to be etched in any of the cassettes 11, 12, 13, 14 is taken so that the wafer can be transported to the buffer zone 3. The wet etching system 4 has a plurality of wet etching regions 41, 42, 43, 44, and the wet etching system 4 is in a normal atmospheric or atmospheric environment, so that the first conveying device 2 is also The wafer to be etched of the buffer 3 is sandwiched or transported to any of the wet etched regions 41, 42, 43, 44 at normal temperature and normal pressure for wet etching. Next, the second transport device 5 (shown as a robot arm) is located at the periphery of the wet etching system 4 for clamping or transporting the wet etched wafer to the vacuuming region 6 To prepare for the dry etching process in the subsequent dry etching system 8. Specifically, the vacuuming region 6 is located at a side or a periphery of the dry etching system 8, and the vacuuming region 6 is connected to the dry etching system 8 and is electrically connected; thus, the vacuuming region 6 is transparently pumped. The air motor or the air pump (not shown) continuously draws air to maintain the internal state of the dry etching system 8 in a state close to vacuum. Further, when the wet etching is completed, the wafer is transported to the evacuated region 6, and the wafer is gripped and transported into the evacuated region 6 by the second transport device 5.

Further, the dry etching system 8 includes a plurality of dry etching regions 81, 82, 83, 84; the third transport device 7 (shown as a robot arm) faces the dry etching regions 81, 82, 83. 84, so that the wafer in the evacuated region 6 can be clamped or transported to any of the dry etched regions 81, 82, 83, 84. In the process, generally, the dry etching regions 81, 82, 83, 84 may further be provided with a gas injector (not shown) for etching a wafer or a semiconductor workpiece, and the gas injector may spray HF (hydrofluorination). acid) and NH _{3 are} gas (ammonia) gas, so that HF gas and NH ₃ gas for the silicon oxide mold (silicon oxide) on the wafer or etching a semiconductor substrate (susceptor). In addition, a semiconductor heating device may be disposed in the dry etching regions 81, 82, 83, and 84 for transmitting a plurality of heating lamps (not shown) or a heat exchange system disposed around the semiconductor substrate. The wafer or the semiconductor is heated to control the ambient temperature of the overall process of the wafer or semiconductor; and further, a plurality of exhaust conduits may be disposed in the space in the dry etching regions 81, 82, 83, and 84. It is used to evacuate and exhaust the exhaust gas of the process.

Further, in the semiconductor substrate processing system in the dry etching regions 81, 82, 83, 84, a control region for controlling the transfer and processing conditions of the semiconductor workpiece, such as the injection of the above HF gas and NH ₃ gas, may be further provided. The amount, temperature, pressure, and time (process time) at which the semiconductor substrate is exposed to the gas, and the like. The initial state data of each semiconductor substrate can be determined by prior detection, and the data of the environment and conditions are stored and controlled by the control area. Here, the initial state of the semiconductor substrate refers to a state before the wafer or the semiconductor substrate is processed; therefore, the semiconductor production machine of the present invention can be regarded as an initial state of the wafer or semiconductor and a process condition of the semiconductor substrate. Regulating or changing; for example, in the case of etching a tantalum oxide mold, the semiconductor production machine of the present invention can change the amount of etching to be performed according to the thickness (ie, the initial state) of the tantalum oxide film formed on the semiconductor substrate. And further determine the process conditions. The initial state of the semiconductor substrate is within the standard range, and individual semiconductor workpieces can be individually processed or processed simultaneously according to actual conditions, thereby maintaining high productivity and maintaining a constant process quality level and yield.

In this way, the semiconductor production machine can process multiple semiconductor bases simultaneously The plate prevents the process quality of the semiconductor substrate from being lowered, and is used for improving the throughput (Through-put). Moreover, the wet etching and the dry etching can be performed repeatedly and repeatedly as needed, so that various semiconductors can be flexibly matched. Production process is very convenient. In addition, the semiconductor processing machine can be applied to a semiconductor processing process including, but not limited to, a related etching process for forming a silicon oxide on a semiconductor substrate; for example, a semiconductor evaporation (evaporation) or a cleaning process.

<Second embodiment>

Please refer to FIG. 2, which is a structural diagram of a second embodiment of the semiconductor production machine of the present invention. The semiconductor production machine of this embodiment also includes a plurality of cassettes 11, 12, 13, 14, a first transport device 2, a buffer zone 3, a wet etching system 4, a second transport device 5, and a A vacuuming zone 6, a third conveyor 7, and a rotary dry etching system 8 are provided. The difference from the first embodiment (Fig. 1) is that the dry etching system 8 is of a rotary type, so that a plurality of dry etching zones 81, 82, 83, 84, 85, 86, 87 can surround the third conveying device. 7 rotation. In this way, when a certain dry etching zone 81, 82, 83, 84, 85, 86, 87 is rotated to a specific position, the third conveying device 7 can be allowed to enter the inside of the wafer; that is, When the wafer needs to be placed or removed, the etched area where the wafer is located can be rotated to the vicinity of the third transport device 7 to facilitate the insertion or removal of the wafer. In the present embodiment, the third transport device 7 is illustrated as a robotic arm, but in other embodiments may be other types of gripping or picking mechanical structures or devices. After the wafer is subjected to the dry etching operation, the wafer can be re-sent to the wet etching system 4 through the second transport device 5 and the third transport device 7 to facilitate the re-performation. Wet etching.

<Third embodiment>

Please refer to FIG. 3, which is a structural diagram of a third embodiment of the semiconductor production machine of the present invention. The semiconductor production machine of this embodiment includes a plurality of cassettes 11, 12, 13, 14, 15, 16, 17, 18, 19, a first transport device 2, a buffer zone 3, a wet etching system 4, A second transport device 5, a vacuuming region 6, a third transport device 7, and a rotary dry etching system 8. Wherein, the plurality of cassettes 11, 12, 13, 14, 15, 16, 17, 18, 19 accommodate a plurality of wafers to be etched, and surround the periphery of the first transport device 2 in a circle manner. That is, the first transport device 2 (in this embodiment, a robot arm) is located at the center of the plurality of cassettes 11, 12, 13, 14, 15, 16, 17, 18, 19, so the first The transport device 2 can pick up the wafers in any of the surrounding cassettes and then transport the plurality of wafers to be etched to the buffer zone 3. The wet etching system 4 has a plurality of wet etching regions 41, 42, 43, 44, 45, 46, 47, 48, and the wet etching system 4 is in a normal atmospheric or atmospheric environment, and thus, the first The second transport device 5 can transport the wafer to be etched in the buffer zone 3 to the plurality of wet etched regions 41, 42, 43, 44, 45, 46, 47, 48 for wet etching. In this embodiment, the second transport device 5 can be composed of a robot arm 51, a horizontal axis moving device 52 and a vertical axis moving device 53, and the robot arm 51 can be horizontally transmitted through the horizontal axis moving device 52. The direction moves left and right, and the vertical axis moving device 53 can also move in the up and down direction (viewed in FIG. 3). Further, the horizontal axis moving device 52 and the vertical axis moving device 53 are located at the center of the wet etching system 4, so that the robot arm 51, the horizontal axis moving device 52, and the vertical axis moving device 53 can be operated with each other. The wafers in any of the wet etched regions 41, 42, 43, 44, 45, 46, 47, 48 are taken out (or the wafer is placed into any wet etched region). In addition, the dry etching system 8 has a plurality of dry etch regions 81, 82, 83, 84, 85, 86, 87, and the plurality of dry etch regions 81, 82, 83, 84, 85, 86, 87 are arranged in a circle manner; therefore, if the wafer needs to be inserted or removed, the wafer can be easily taken by the third transport device 7 Put in or take out the circle. In this way, by the clamping and transporting of the second transport device 5 and the third transport device 7, the wafer can be repeatedly transferred between the wet etching system 4 and the dry etching system 8 for profit. Multiple wet etching, dry etching.

In summary, the semiconductor production machine described in this creation is reversed by visual needs. Wet etching and dry etching are applied over and over again, so it can be flexibly combined with various semiconductor production procedures to solve the cost and time problem that traditionally only has a single wet etching or dry etching process. .

The present invention is described above by way of example, but it is not intended to limit the scope of patent rights claimed herein. The scope of patent protection is subject to the scope of the patent application and its equivalent fields. Any changes or modifications made by those skilled in the art without departing from the spirit or scope of this patent are subject to the equivalent changes or designs made in the spirit of the present disclosure and should be included in the scope of the patent application below. Inside.

11, 12, 13, 14‧‧ ‧ Carmen

2‧‧‧First transport device

21‧‧‧ Robotic arm

22‧‧‧Slide device

3‧‧‧buffer

4‧‧‧ Wet etching system

41, 42, 43, 44‧‧‧ Wet etched areas

5‧‧‧Second transport device

6‧‧‧vacuum area

7‧‧‧ Third transport device

8‧‧‧dry etching system

81, 82, 83, 84‧‧‧ dry etching zone

Claims (6)

A semiconductor production machine includes: a plurality of cassettes (11, 12, 13, 14) for accommodating a plurality of wafers to be etched; and a first transport device (2) located in the plurality of cassettes a periphery of (11, 12, 13, 14); at least one buffer (3), the first transport device (2) can transport the plurality of wafers to be etched to the buffer zone (3); The etching system (4) has a plurality of wet etched regions (41, 42, 43, 44), and the first transport device (2) transports the wafer to be etched in the buffer region (3) to the plurality of wet Etched regions (41, 42, 43, 44) for wet etching; a second transport device (5) located at the periphery of the wet etching system (4); an evacuated region (6), The second transport device (5) can transport the wet etched wafer to the evacuated region (6) for vacuuming; a third transport device (7); and a dry etching system (8) a vacuum region having a plurality of dry etch regions (81, 82, 83, 84), the third transport device (7) being located at the periphery of the dry etch system (8), and capable of pumping the vacuum Wafer transport to and from the vacuum area (6) Dry etching from the system (8) of the plurality of dry etching region (83, 84), to carry out dry etching after dry etching and transported to the next process. The semiconductor production machine of claim 1, wherein the first transport device (2) has at least one mechanical arm (21) and at least one slide device (22) slidable back and forth to capture the plurality of The wafer to be etched is to the buffer (3). The semiconductor production machine of claim 1, wherein the wet etching system (4) is Generally under normal pressure or atmospheric pressure. The semiconductor production machine of claim 1, wherein the second transport device (5) is a robot arm. The semiconductor production machine of claim 1, wherein the third transport device (7) is a robot arm. The semiconductor production machine of claim 1, wherein the plurality of wet etched regions (41, 42, 43, 44) are wet etched regions having different formulation etchants.