TWM497314U - High-sensitivity self-capacitance in-cell touch display panel device - Google Patents

Abstract

The invention provides a high-sensitivity self-capacitance in-cell touch display panel device. A sensing electrode layer has a plurality of sensing electrodes. A display controller is connected to a first ground and powered by a first power source. A touch controller is coupled to the plurality of sensing electrodes to preform touch detection. The touch controller is connected to a second ground and powered by a second power source, wherein the first power source and the first ground are different from the second power source and the second ground. An amplifier is connected to the touch controller and a common voltage layer. When performing touch detection, the touch controller receives a touch signal from a sensing electrode and sends the touch signal to the amplifier to generate an amplified touch signal. The amplified touch signal is applied to the common voltage layer to reduce capacitor effect between the sensing electrode and the common voltage layer.

Description

Self-capacitance in-cell touch display panel device with high sensing sensitivity

The present invention relates to the technical field of touch panels, and more particularly to a self-capacitance in-cell touch display panel device with high sensing sensitivity.

The touch-sensitive flat panel display directly overlaps the touch panel and the flat display, because the laminated touch panel is a transparent panel, so that the image can penetrate the superimposed touch panel display image. Then use the touch panel as the medium or interface for input. However, this conventional technique requires a large increase in the weight of the flat panel display due to the necessity of adding a complete weight of the touch panel, which does not meet the requirements of the current market for light, thin, short, and small displays. Moreover, when the touch panel and the flat display are directly stacked, the thickness of the touch panel itself is increased, thereby reducing the transmittance of light, increasing the reflectance and the haze, and the quality of the screen display is greatly reduced.

In response to the aforementioned shortcomings, the touch panel display adopts an embedded touch technology. The main development direction of embedded touch technology can be divided into On-Cell and In-Cell technologies. On-Cell technology is to make the sensor of the projected capacitive touch technology (Sensor) on the display panel color filter The back of the (Color Filter, CF) (that is, the surface of the polarizing plate is attached) is integrated into the structure of the color filter. The On-Cell Touch technology also allows the touch panel's Sensor to be placed on the film and then attached to the glass of the uppermost upper substrate. In Cell technology puts the sensor into the structure of the LCD Cell. However, when the sensing electrode is placed in the LCD Cell structure, since the distance between the sensing electrode and the common voltage layer is only a few micrometers, the capacitance between each other is greatly increased, and the capacitance change of the touch is relatively small. Detection, and the proximity is close to cause serious interference from the display signal is even worse.

FIG. 1 is a schematic diagram of a transparent electrode structure of a conventional single-layer touch panel. As shown in FIG. 1, a transparent electrode structure 11 is output via a trace 12 to the electrical signal sensed by the transparent electrode structure 11. The single-layer transparent electrode structure of Figure 1 enables true multi-touch detection. In use, the single layer transparent electrode structure of Figure 1 will be combined with a display panel. However, when the single-layer touch panel is integrated into the display panel, the single-layer transparent electrode structure forms a significant capacitance with a common voltage layer of the display panel, and is easy to cause noise, thereby reducing the accuracy of detecting the touch position. degree. In order to solve the dilemma that capacitance and noise are difficult to overcome, the commercially available In Cell touch panel usually cuts the common voltage layer and performs time-sharing operation with the display control; it not only limits the resolution and size of the touch screen, but also affects the display quality. The design, adjustment and panel manufacturing difficulty of the display drive control circuit are greatly increased, so that the production yield is reduced and the cost is increased. Therefore, the conventional self-capacitance in-cell touch display panel still has room for improvement.

The purpose of this creation is mainly to provide a self-capacitance in-cell touch display panel device with high sensing sensitivity, which can significantly reduce the capacitance effect between the sensing electrode and the common voltage layer and is not easily interfered by the display signal, so the touch is made It is not necessary to operate with the display driver in the time of collision detection. In this way, the size of the in-cell touch panel is no longer limited, and the sensing and production difficulty is reduced, and the touch of the finger can be easily and correctly detected, and the production cost can be reduced.

According to one of the features of the present invention, the present invention provides a self-capacitance in-cell touch display panel device with high sensing sensitivity, comprising a first substrate, a second substrate, a common voltage layer, a sensing electrode layer, and a display. The control circuit, a touch sensing control circuit, a plurality of sensing electrode selection switches, and an amplifier having a gain greater than zero. The first substrate and the second substrate are arranged in a parallel pair to sandwich a display layer between the two substrates. The common voltage layer is between the first substrate and the display layer. The sensing electrode layer is located between the first substrate and the common voltage layer, and the sensing electrode layer has a plurality of sensing electrodes. Each of the plurality of sensing electrode selection switches has a sensing electrode selection switch corresponding to the at least one sensing electrode. The display control circuit is configured to control display of the self-capacitance in-cell touch display panel device. The display control circuit is powered by a first power source (Vccdisp) and connected to a first ground (Gdisp). The touch sensing control circuit is connected to the plurality of sensing electrode selection switches to control the touch sensing of the at least one sensing electrode corresponding to each of the sensing electrode selection switches, wherein the touch sensing control circuit is controlled by a second power source (Vcctouch) Power and connect to a second ground (Gtouch). An amplifier having a gain greater than zero is connected to the touch sensing control circuit and the common voltage a layer, wherein the first power source and the first ground are different from the second power source and the second ground, and when detecting, the touch sensing control circuit has a sensing electrode selection switch corresponding to the at least one sensing electrode A sensed signal is amplified by the amplifier having a gain greater than zero to generate a phase replica inductive signal and applied to the common voltage layer to reduce between the at least one sensing electrode corresponding to the sensing electrode selection switch and the common voltage layer Capacitance effect.

According to another feature of the present invention, the present invention provides a self-capacitance in-cell touch display panel device with high sensing sensitivity, comprising a first substrate, a common voltage layer, a second substrate, a plurality of sensing electrodes, and a plurality A sensing electrode selection switch, a display control circuit, a touch sensing control circuit, and an amplifier having a gain greater than zero. The first substrate and the second substrate are arranged in a parallel pair to sandwich a display layer between the two substrates. Each of the plurality of sensing electrodes is formed of a metal mesh. Each of the plurality of sensing electrode selection switches has a sensing electrode selection switch corresponding to the at least one sensing electrode. The display control circuit is configured to control display of the self-capacitance in-cell touch display panel device. The display control circuit is powered by a first power source (Vccdisp) and connected to a first ground (Gdisp). The touch sensing control circuit is connected to the plurality of sensing electrode selection switches to control the touch sensing of the at least one sensing electrode corresponding to each of the sensing electrode selection switches, wherein the touch sensing control circuit is controlled by a second power source (Vcctouch) Power and connect to a second ground (Gtouch). The amplifier having a gain greater than zero is connected to the touch sensing control circuit and the common voltage layer. The first power source and the first ground are different from the second power source and the second ground, and when the detecting is performed, the touch sensing control circuit senses the at least one sensing electrode corresponding to the sensing electrode selection switch. An inductive signal is amplified by the amplifier having a gain greater than zero to generate an in-phase replica inductive signal and applied to the common voltage layer to reduce between the at least one sensing electrode corresponding to the sensing electrode selection switch and the common voltage layer Capacitance effect.

According to another feature of the present invention, the present invention provides a self-capacitance in-cell touch display panel device with high sensing sensitivity, comprising a first substrate, a second substrate, a cathode layer, a sensing electrode layer, and a plurality of A sensing electrode selection switch, a display control circuit, a touch sensing control circuit, and an amplifier having a gain greater than zero. The first substrate and the second substrate are arranged in a parallel pair to sandwich a display layer between the two substrates. The cathode layer is located on the same side of the first substrate facing the display layer. The sensing electrode layer is located between the first substrate and the cathode layer, and the sensing electrode layer has a plurality of sensing electrodes, and each of the plurality of sensing electrode selection switches corresponds to at least one sensing electrode. The display control circuit controls the display of the self-capacitance in-cell touch display panel device. The display control circuit is powered by a first power source (Vccdisp) and connected to a first ground (Gdisp). The touch sensing control circuit is connected to the plurality of sensing electrode selection switches to control the touch sensing of the at least one sensing electrode corresponding to each of the sensing electrode selection switches, wherein the touch sensing control circuit is controlled by a second power source (Vcctouch) Power and connect to a second ground (Gtouch). The gain is greater than The zero-amplifier is connected to the touch sensing control circuit and the cathode layer, wherein the first power source and the first ground are different from the second power source and the second ground, and when detecting, the touch sensing control circuit An inductive signal induced by the at least one sensing electrode corresponding to the sensing electrode selection switch is amplified by the amplifier having a gain greater than zero to generate an in-phase reproduction sensing signal and applied to the cathode layer to reduce the sensing electrode selection. The switch corresponds to a capacitive effect between the at least one sensing electrode and the cathode layer.

According to another feature of the present invention, the present invention proposes a high-sensitivity self-capacitance in-cell touch display panel device comprising a first substrate, a second substrate, an anode layer, a sensing electrode layer, and a plurality of A sensing electrode selection switch, a display control circuit, a touch sensing control circuit, and an amplifier having a gain greater than zero. The first substrate and the second substrate are arranged in a parallel pair to sandwich a display layer between the two substrates. The anode layer is located on the same side of the first substrate facing the display layer. The sensing electrode layer is located between the first substrate and the anode layer, and the sensing electrode layer has a plurality of sensing electrodes, and each of the plurality of sensing electrode selection switches corresponds to at least one sensing electrode. The display control circuit is configured to control display of the self-capacitance in-cell touch display panel device. The display control circuit is powered by a first power source (Vccdisp) and connected to a first ground (Gdisp). The touch sensing control circuit is connected to the plurality of sensing electrode selection switches to control the touch sensing of the at least one sensing electrode corresponding to each of the sensing electrode selection switches, wherein the touch sensing control circuit is controlled by a second power source (Vcctouch) Power and connect to a second ground (Gtouch). The gain is greater than The zero-amplifier is connected to the touch sensing control circuit and the anode layer, wherein the first ground is different from the second ground, and when detecting, the touch sensing control circuit corresponds to a sensing electrode selection switch An inductive signal sensed by the at least one sensing electrode is amplified by the amplifier having a gain greater than zero to generate an in-phase replica sensing signal and applied to the anode layer to reduce the at least one sensing electrode corresponding to the sensing electrode selection switch. The capacitive effect between the anode layer and the anode layer.

11‧‧‧Transparent electrode structure

12‧‧‧Wiring

100‧‧‧Self-capacitance in-cell touch display panel device with high sensing sensitivity

110‧‧‧First substrate

120‧‧‧second substrate

130‧‧‧Display material layer

140‧‧‧Lighting layer

150‧‧‧Color filter layer

160‧‧‧Common voltage layer

170‧‧‧Induction electrode layer

180‧‧‧Thin film transistor layer

190‧‧‧First polarizing layer

200‧‧‧Second polarizing layer

141‧‧‧ shading lines

143‧‧‧Light block

160‧‧‧Common voltage layer

170‧‧‧Induction electrode layer

171‧‧‧Induction electrode

173‧‧‧Sensor electrode selector switch

610‧‧‧Display control circuit

620‧‧‧Touch sensing control circuit

630‧‧‧Amplifier with gain greater than zero

171-1‧‧‧Induction electrode

173-1‧‧‧Induction electrode selector switch

900‧‧‧Self-capacitance in-cell touch display panel device with high sensing sensitivity

1000‧‧‧Self-capacitance in-cell touch display panel device with high sensing sensitivity

930‧‧‧Display layer

960‧‧‧ cathode layer

970‧‧‧anode layer

950‧‧‧thin film layer

971‧‧‧anode element electrode

951‧‧‧ pixel drive circuit

9511‧‧‧ gate

9513‧‧‧汲/source

9515‧‧‧Source/Bungee

931‧‧‧ hole transmission sublayer

933‧‧‧Lighting layer

935‧‧‧Electronic transmission sublayer

1100‧‧‧Self-capacitance in-cell touch display panel device with high sensing sensitivity

933-1‧‧‧Red light emitting layer

933-2‧‧‧Blue light layer

933-3‧‧‧Green light layer

1200‧‧‧Self-capacitance in-cell touch display panel device with high sensing sensitivity

961‧‧‧cathodene electrode

1300‧‧‧Self-capacitance in-cell touch display panel device with high sensing sensitivity

FIG. 1 is a schematic diagram of a transparent electrode structure of a conventional single-layer touch panel.

FIG. 2 is a stacked diagram of an embodiment of a self-capacitance in-cell touch display panel device with high sensing sensitivity.

Fig. 3 is a schematic view showing the light shielding layer of the present invention.

Figure 4 is a schematic illustration of the inventive sensing electrode layer.

FIG. 5 is a schematic diagram of the principle of the self-capacitance in-cell touch display panel device with high sensing sensitivity.

FIG. 6 is a schematic diagram of a self-capacitance in-cell touch display panel device with high sensing sensitivity.

FIG. 7 is an equivalent circuit diagram of a conventional self-capacitance in-cell touch display panel device.

FIG. 8 is a comparative equivalent circuit diagram of the self-capacitance in-cell touch display panel device.

Figure 9 is a self-capacitance in-cell touch display with high sensing sensitivity. A stacked schematic view of yet another embodiment of the panel device.

FIG. 10 is a stacked diagram of a high-sensitivity self-capacitance in-cell touch display panel device according to an embodiment of the present invention.

FIG. 11 is a schematic diagram of a stacking of another embodiment of a self-capacitance in-cell touch display panel device with high sensing sensitivity.

FIG. 12 is a stacked diagram of still another embodiment of a self-capacitance in-cell touch display panel device with high sensing sensitivity.

FIG. 13 is a schematic diagram of a stacking of another embodiment of a self-capacitance in-cell touch display panel device with high sensing sensitivity.

FIG. 2 is a stacked diagram of an embodiment of a self-capacitance in-cell touch display panel device 100 with high sensing sensitivity. As shown in FIG. 2 , the high-sensitivity self-capacitance in-cell touch display panel device 100 includes a first substrate 110 , a second substrate 120 , a display material layer 130 , and a black matrix 140 . a color filter 150, a common voltage layer 160, a sensing electrode layer 170, a thin film transistor layer 180, a first polarizer layer 190, and a second polarizing layer (lower) Polarizer) 200.

The first substrate 110 and the second substrate 120 are preferably glass substrates. The first substrate 110 and the second substrate 120 are disposed in parallel with each other to sandwich the display material layer 130 between the two substrates 110 and 120. In the embodiment, the display material layer 130 is a liquid crystal layer.

The black matrix 140 is located on a surface of the first substrate 110 facing the display material layer 130. As shown in FIG. 3, the light shielding layer 140 is composed of a plurality of light shielding lines 141. The plurality of light shielding lines 141 are disposed in a first direction (X-axis direction) and a second direction (Y-axis direction) to form a plurality of light transmitting blocks 143.

FIG. 3 is a schematic view of the light shielding layer 140, which is the same as the light shielding layer of a general liquid crystal display panel. The light shielding layer 140 is composed of a line 141 of a black insulating material that is opaque to light. The plurality of light-shielding lines 141 of the black insulating material are respectively disposed in a first direction and a second direction to form a plurality of light-transmissive blocks 143. The plurality of light shielding lines 141 are disposed according to the relative positions of the gate driving lines and the source driving lines of the thin film transistor layer 180. The first direction and the second direction are perpendicular to each other, so the light shielding layer 140 is also referred to as a black matrix.

The common voltage layer (Vcom) 160 is located between the first substrate 110 and the display material layer 130. The common voltage layer (Vcom) 160 can be a DC common voltage layer (DC Vcom) or an AC common voltage layer (AC Vcom).

FIG. 4 is a schematic diagram of the inventive sensing electrode layer 170. The sensing electrode layer 170 is located between the first substrate 110 and the common voltage layer 160. The sensing electrode layer 170 has a plurality of sensing electrodes 171 and a plurality of sensing electrode selection switches 173. Each of the sensing electrode selection switches 173 is connected to at least one of the sensing electrodes 171.

Wherein each of the plurality of sensing electrodes 171 is inductive The pole 171 is polygonal, circular, elliptical, star-shaped, wedge-shaped, radiating, triangular, pentagonal, hexagonal, octagonal, rectangular or square. The material of each of the sensing electrodes 171 is one of the following: a transparent conductive film ITO material, a zinc tin oxide film material, an ETO material, a nano silver, a conductive polymer material, a carbon nanotube material, and graphene.

FIG. 5 is a schematic diagram of the principle of the self-capacitance in-cell touch display panel device 100 with high sensing sensitivity. The ground of the 5V DC voltage is a first ground (Gdisp), and the ground of the 9V DC voltage is the second ground (Gtouch). Since the ground of the 9V DC voltage is the second ground (Gtouch), only 5V can be measured between the point A and the first ground (Gdisp), that is, the 9V DC voltage is not present to the first ground (Gdisp). influences. Similarly, since the ground of the 5V DC voltage is the first ground (Gdisp), only 9V can be measured between the A point and the second ground (Gtouch), that is, the 5V DC voltage is applied to the second ground (Gtouch). No effect.

FIG. 6 is a schematic diagram of the self-capacitance in-cell touch display panel device 100 with high sensing sensitivity. As shown in FIG. 6, a display control circuit 610 is configured to control display of the self-capacitance in-cell touch display panel device 100. The display control circuit 610 is powered by a first power source (Vccdisp) and connected to a first ground. (Gdisp). Display control circuit 610 is coupled to the common voltage layer (Vcom) 160. When the common voltage layer (Vcom) 160 is a DC common voltage layer (DC Vcom), the display control circuit 610 electrically connects the first ground (Gdisp) to the common voltage layer (Vcom) 160. When the common voltage layer (Vcom) 160 is an AC common voltage layer (AC Vcom), the display control circuit 610 will use the first An AC signal with a ground (Gdisp) reference is output to the common voltage layer (Vcom) 160.

As shown in FIG. 4, a touch sensing control circuit 620 is coupled to the plurality of sensing electrode selection switches 173 for controlling the touch sensing of the at least one sensing electrode 171 corresponding to each of the sensing electrode selection switches 173. The touch sensing control circuit 620 is powered by a second power source (Vcctouch) and connected to a second ground (Gtouch). The first power source (Vccdisp) and the first ground (Gdisp) are different from the second power source (Vcctouch) and the second ground (Gtouch). That is, there is no common current loop between them.

An amplifier 630 having a gain greater than zero is coupled to the touch sensing control circuit 620 and the common voltage layer 160. The amplifier 630 having a gain greater than zero is powered by the second power source Vcctouch and connected to the second ground (Gtouch). When the touch sensing detection is performed, the touch sensing control circuit 620 passes an inductive signal induced by the at least one sensing electrode 171-1 corresponding to the sensing electrode selection switch 173-1 via the amplifier 630 whose gain is greater than zero. After amplification, a phase replica inversion signal Vamp is generated and applied to the common voltage layer 160 to reduce the capacitive effect between the at least one sensing electrode 171-1 corresponding to the sensing electrode selection switch 173-1 and the common voltage layer 160.

When the amplifier 630 having the gain greater than zero has a magnification of one. The touch sensing control circuit 620 obtains the sensing signal of the at least one sensing electrode 171-1, and generates the in-phase replica sensing signal Vamp via the amplifier 630 with a gain greater than zero. The in-phase replica sensing signal Vamp is the same as the inductive signal of the sensing electrode 171-1. That is, the sensing electrode 171-1 has the same potential as the common voltage layer 160. Further, since the sensing electrode 171-1 has the same potential as the common voltage layer 160, the effective capacitance between the sensing electrode 171-1 and the common voltage layer 160 is zero. Therefore, the authoring technique can effectively reduce the capacitive effect between the at least one sensing electrode 171-1 and the common voltage layer 160.

FIG. 7 is an equivalent circuit diagram of a conventional self-capacitance in-cell touch display panel device. FIG. 8 is a comparative equivalent circuit diagram of the self-capacitance in-cell touch display panel device 100. As shown in FIG. 8, the gain of the amplifier 630 having a gain greater than zero is preferably 1, and the induced signal on the sensing electrode S is applied to the common voltage layer 160 via the amplifier 630 having a gain greater than zero. The sensing electrode S1 does not use this creation technique.

When a finger touches the sensing electrode S and the sensing electrode S1, the capacitance between the sensing electrode S and the common voltage layer 160 is zero. The capacitance on the sensing electrode S is determined only by the capacitance C _FS between the finger and the sensing electrode S and the capacitance C _SG between the sensing electrode S and the ground. The capacitance on the sensing electrode S1 is the capacitance C _FS1 between the finger and the sensing electrode S1 and the capacitance C _S1G between the sensing electrode S1 and the ground, the capacitance C _S1C between the sensing electrode S1 and the common voltage layer 160, and the capacitance the capacitance C between the common voltage and the ground layer 160 _CG determined. As can be seen from FIG. 8, the capacitance C _FS between the finger and the sensing electrode S occupies more components in the sensing signal. Therefore, the prior art can detect the touch position more accurately than the prior art, and can also reduce the sensing electrode. A capacitive effect with the common voltage layer 160.

Referring again to FIG. 2, the color filter layer 150 is located in the shading. The layer 140 faces the side of the display layer 130.

The thin film transistor layer 180 is located on the side of the second substrate 120 facing the display layer 130. The thin film transistor layer 180 has K gate driving lines and L source driving lines, and is driven by the gate driving line and the source. The line is known in the liquid crystal display and is not shown in the drawings. The K gate driving lines and the L source driving lines are respectively disposed in the first direction and the second direction to form a plurality of pixel blocks. Each pixel block has a corresponding pixel transistor and a pixel capacitor, and drives the corresponding pixel transistor and the pixel capacitor according to a display pixel signal and a display driving signal, thereby executing The display operation, wherein K and L are positive integers, and the positions of the plurality of light-shielding lines 141 are corresponding to positions of the K gate driving lines and the L source driving lines.

The first polarizing layer 190 is located on the side of the first substrate 110 facing away from the display layer 130. The second polarizing layer 200 is located on the side of the second substrate 120 facing away from the display layer 130.

FIG. 9 is a schematic diagram of a stacking of another embodiment of a self-capacitance in-cell touch display panel device 900 with high sensing sensitivity. As shown in FIG. 9 , the high-sensitivity self-capacitance in-cell touch display panel device 900 includes a first substrate 110 , a second substrate 120 , a display material layer 130 , and a black matrix 140 . A color filter 150, a sensing electrode layer 170, a thin film transistor layer 180, a first polarizer layer 190, and a second polarizer layer 200. The main difference from FIG. 2 is that the sensing electrode layer 170 Located on one side of the light shielding layer 140 facing the display layer 130, the sensing electrode layer 170 includes a plurality of sensing electrodes 171, and each of the sensing electrodes 171 is formed by a metal mesh. That is, the plurality of sensing electrodes 171 are located on the side of the light shielding layer 140 facing the display layer 130. At the same time, the common voltage layer 160 is located within the thin film transistor layer 180. Wherein, the metal material of the metal grid is one of the following: chromium, bismuth, molybdenum, aluminum, silver, copper, titanium, nickel, bismuth, cobalt, tungsten, magnesium (Mg), calcium (Ca), potassium ( K), lithium (Li), indium (In), alloy, lithium fluoride (LiF), magnesium fluoride (MgF2), lithium oxide (Li2O).

As for the technique of forming the sensing electrode 171 by the metal mesh, reference is made to the new patent No. M466307, which is filed by the same creator and has been published. The common voltage layer 160 is an LCD panel located in the IPS form within the thin film transistor layer 180.

The light shielding layer 140 is disposed on a side of the first substrate 110 facing the display layer 130. The light shielding layer 140 is formed by a plurality of light shielding lines 141, and the plurality of light shielding lines 141 are disposed in a first direction and a second Direction to form a plurality of light transmissive blocks.

The color filter layer 150 is located on a side of the light shielding layer facing the display layer. The first polarizing layer 190 is located on the side of the first substrate 110 facing away from the display layer 130. The thin film transistor layer 180 is located on the side of the second substrate 120 facing the display layer 130. The thin film transistor layer 180 has K gate driving lines and L source driving lines, and is driven by the gate driving line and the source. The line is known in the liquid crystal display, so not shown in the figure, the K gate driving line and the L source driving lines are respectively disposed in the first direction and the second Direction, to form a plurality of pixel blocks, each pixel block has a corresponding pixel transistor and a pixel capacitor, according to a display pixel signal and a display driving signal to drive the corresponding picture The transistor and the pixel capacitor perform a display operation, wherein K and L are positive integers. The second polarizing layer 200 is located on the side of the second substrate 120 facing away from the display layer 130.

The position of the plurality of light shielding lines 141 corresponds to the positions of the K gate driving lines and the L source driving lines. The positions of the metal grids correspond to the positions of the plurality of light-shielding lines 141.

In other embodiments, the sensing electrode layer 170 can be located in the thin film transistor layer 180, that is, the plurality of sensing electrodes are located in the thin film transistor layer 180. As for the technique of forming the metal grid of the sensing electrode in the thin film transistor layer 180 and the technique of forming the metal grid sensing electrode on the first substrate 110, refer to the novel patents M468723, M474964, M476315 which the same creator has applied for and has already announced. , M459453, M445719, M470323, M445719, M47359, M470312, M467954, M461104 announcement.

FIG. 10 is a stacked diagram of a high-sensitivity self-capacitance in-cell touch display panel device 1000 of the present invention. The high-sensitivity sensitivity self-capacitance in-cell touch display panel device 1000 differs mainly from FIG. 2 and FIG. 6 in the display layer 930, the cathode layer 960, the anode layer 970, and the thin film transistor layer 950. The output of amplifier 630 having a gain greater than zero is coupled to the cathode layer 960. When the touch sensing detection is performed, the touch sensing control circuit corresponds to a sensing electrode selection switch An inductive signal sensed by the at least one sensing electrode is amplified by an amplifier having a gain greater than zero to generate a phase inversion sensing signal and applied to the cathode layer 960 to reduce the at least one sensing electrode corresponding to the sensing electrode selection switch. The capacitive effect between the cathode layers 960. The display layer 930 is an organic light emitting diode layer.

The cathode layer 960 is located on a side of the first substrate 110 facing the display layer 930. At the same time, the cathode layer 960 is located between the first substrate 110 and the display layer 930. The cathode layer 960 is formed of a metal conductive material. Preferably, the cathode layer 960 is formed of a metal material having a thickness of less than 50 nanometers (nm) selected from one of the group consisting of chromium, bismuth, nickel, molybdenum, aluminum (Al), Silver (Ag), copper, magnesium (Mg), calcium (Ca), yttrium, cobalt, tungsten, potassium (K), lithium (Li), indium (In), an alloy of the above materials or lithium fluoride (LiF) , magnesium fluoride (MgF2), lithium oxide (Li2O) and Al combined. Since the thickness of the cathode layer 960 is less than 50 nm, the light generated by the display layer 930 can still penetrate the cathode layer 960 to display an image on the first substrate 110. The cathode layer 960 is electrically connected in a single piece, and the cathode layer 960 receives current from the anode pixel electrode 971.

The color filter layer 150 is located on a side of the light shielding layer 140 facing the display layer 130.

The thin film transistor layer 950 is located on a surface of the second substrate 120 facing the display layer 930 side. The thin film transistor layer 950 has a plurality of gate drive lines (not shown), a plurality of source drive lines (not shown), and a plurality of pixel drive circuits 951. Each pixel drive circuit 951 corresponds to A pixel is used to drive the corresponding pixel driving circuit 951 according to a display pixel signal and a display driving signal, thereby performing a display operation. The plurality of gate drive lines and the plurality of source drive lines define a plurality of pixel regions, each pixel region corresponding to a light transmissive block 143.

According to the design of the pixel driving circuit 951, for example, the 2T1C is designed as a pixel driving circuit by 2 thin film transistors and 1 storage capacitor, and the 6T2C is designed as a pixel driving circuit by 6 thin film transistors and 2 storage capacitors. In the pixel driving circuit 951, at least one thin film transistor gate 9511 is connected to a gate driving line (not shown), and at least one thin film transistor is connected to the source/source 9513 in the control circuit according to the design of the driving circuit. To a source driving line (not shown), at least one source/drain 9515 of the thin film transistor in the pixel driving circuit 951 is connected to a corresponding anode pixel electrode 971 in the anode layer 970.

The anode layer 970 is located on one side of the second thin film transistor layer 950 for the display layer 930. The anode layer 970 has a plurality of anode pixel electrodes 971. Each anode pixel electrode of the plurality of anode pixel electrodes 971 corresponds to a pixel driving transistor of the pixel driving circuit 951 of the second thin film transistor layer 950, that is, the plurality of anode pixel electrodes Each of the anode pixel electrodes is connected to a source/drain of the pixel driving transistor of the corresponding pixel driving circuit 951 to form a pixel electrode of a specific color, such as a red pixel electrode, a green pixel. Electrode, or blue pixel electrode.

The display layer 930 includes a hole transmission sublayer (hole A transporting layer (HTL) 931, an illuminating layer 933, and an electron transporting layer (ETL) 935. The display layer 930 preferably produces white light and is filtered using the color filter 150 to produce three primary colors of red, blue, and green.

FIG. 11 is a stacked diagram showing still another embodiment of a high-sensitivity self-capacitance in-cell touch display panel device 1100. The main difference between FIG. 11 and FIG. 10 is that, in FIG. 11, the red light-emitting layer 933-1, the blue light-emitting layer 933-2, and the green light-emitting layer 933-3 are used, so that it is not necessary to use a color filter and A black matrix.

FIG. 12 is a stacked diagram of still another embodiment of a high-sensitivity self-capacitance in-cell touch display panel device 1200. The main difference between FIG. 12 and FIG. 10 is that the cathode layer 960 is aligned with the position of the anode layer 970. The cathode layer 960 has a plurality of cathode pixel electrodes 961. Each cathode pixel electrode 961 corresponds to a pixel driving transistor of the pixel driving circuit 951 of the thin film transistor layer 950, that is, each cathode pixel electrode of the plurality of cathode pixel electrodes corresponds to The source/drain 9515 of the pixel driving transistor of the pixel driving circuit 951 is connected to form a pixel electrode of a specific color, such as a red pixel electrode, a green pixel electrode, or a blue pixel electrode.

12 is not only the position of the cathode layer 960 and the anode layer 970, but also the hole transporting layer (HTL) 931 and electron transport of the display layer 930 in order to match the cathode layer 960 and the anode layer 970. The position of the electron transporting layer (HTL) 935 is also Tune. The cathode layer 960 has a plurality of cathode pixel electrodes 961, and each cathode pixel electrode of the plurality of cathode pixel electrodes 961 is connected to a source/drain of a corresponding pixel driving transistor of the pixel driving circuit.

In this embodiment, the output of amplifier 630 having a gain greater than zero is coupled to the anode layer 970. When the touch sensing detection is performed, the touch sensing control circuit amplifies an inductive signal induced by the at least one sensing electrode corresponding to the sensing electrode selection switch by an amplifier with a gain greater than zero to generate a phase inversion sensing signal. And applied to the anode layer 970 to reduce the capacitive effect between the at least one sensing electrode corresponding to the sensing electrode selection switch and the anode layer 970.

FIG. 13 is a stacked diagram of still another embodiment of a high-sensitivity self-capacitance in-cell touch display panel device 1300. The main difference between FIG. 13 and FIG. 12 is that, in FIG. 13, the red light-emitting layer 933-1, the blue light-emitting layer 933-2, and the green light-emitting layer 933-3 are used, so that it is not necessary to use a color filter and A black matrix.

As can be seen from the foregoing description, when detecting the finger touch position, the present invention generates the in-phase copying induction signal Vamp by using the sensing signal of the sensing electrode 171-1 via the amplifier 630 having a gain greater than zero, and the in-phase is generated. The replica sensing signal Vamp is applied to the common voltage layer 160, and the sensing electrode 171-1 has the same potential as the common voltage layer 160, so that the capacitance between the sensing electrode 171-1 and the common voltage layer 160 is 0. The capacitance between the finger and the sensing electrode occupies more components in the sensing signal, so this authoring technique can detect the touch position more accurately than the prior art. with In order to avoid the in-phase copy sensing signal Vamp interfering with the display panel applied to the common voltage layer 160, the display control circuit 610 and the touch sensing control circuit 620 and the power supply of the amplifier 630 having a gain greater than zero are separated from the ground. This can increase the accuracy of detecting the touch position without interfering with the display quality.

In other embodiments, the sensing electrode layer 170 can also be formed on the side of the thin film transistor layer 950 or the first substrate by using a conductive metal grid. For the related technology, reference is made to the publications of the novel patents M468723, M474964, M476315, M459453, M445719, M47359, M470312, M467954, M461104, which have been filed by the same creator and have been announced.

The above-described embodiments are merely examples for convenience of description, and the scope of the claims is intended to be limited to the above embodiments.

160‧‧‧Common voltage layer

170‧‧‧Induction electrode layer

171‧‧‧Induction electrode

173‧‧‧Sensor electrode selector switch

610‧‧‧Display control circuit

620‧‧‧Touch sensing control circuit

630‧‧‧Amplifier with gain greater than zero

171-1‧‧‧Induction electrode

173-1‧‧‧Induction electrode selector switch

Claims (29)

A high-sensitivity self-capacitance in-cell touch display panel device includes: a first substrate; a second substrate, wherein the first substrate and the second substrate are arranged in a parallel pair to sandwich a display layer Between the two substrates; a common voltage layer between the first substrate and the display layer; a sensing electrode layer between the first substrate and the common voltage layer, the sensing electrode layer has a plurality of sensing electrodes a plurality of sensing electrode selection switches, each of the plurality of sensing electrode selection switches corresponding to at least one sensing electrode; a display control circuit for controlling display of the self-capacitance in-cell touch display panel device The display control circuit is powered by a first power source and connected to a first ground; a touch sensing control circuit is coupled to the plurality of sensing electrode selection switches to control the at least one sensing corresponding to each of the sensing electrode selection switches The electrode performs touch sensing, the touch sensing control circuit is powered by a second power source and connected to a second ground; and a gain greater than zero The device is connected to the touch sensing control circuit and the common voltage layer, wherein the first power source and the first ground are different from the second power source and the second ground, and the touch sensing control is performed when detecting The circuit amplifies an induction signal induced by the at least one sensing electrode corresponding to the sensing electrode selection switch by an amplifier with a gain greater than zero to generate a phase reproduction sensing signal and applies the same to the common voltage layer to reduce the sensing electrode selection. The switch corresponds to a capacitive effect between the at least one sensing electrode and the common voltage layer. The high-sensitivity self-capacitance in-cell touch display panel device according to the first aspect of the invention, further comprising: a light shielding layer on a side of the first substrate facing the display layer, the shading The layer is composed of a plurality of light-shielding lines, and the plurality of light-shielding lines are disposed in a first direction and a second direction to form a plurality of light-transmissive blocks; a color filter layer is disposed on the light-shielding layer facing the display a layer of a first polarizing layer on a side of the first substrate facing away from the display layer; a thin film transistor layer on a side of the second substrate facing the display layer, the thin film transistor layer having K a gate driving line and an L source driving line, wherein the K gate driving line and the L source driving lines are respectively disposed in the first direction and the second direction to form a plurality of pixel blocks, each of The pixel unit has a corresponding pixel transistor and a pixel capacitor, and drives the corresponding pixel transistor and the pixel capacitor according to a display pixel signal and a display driving signal to perform display Operation, where K, L are positive integers; a second polarizing layer is located on a side of the second substrate facing away from the display layer, wherein the position of the plurality of light shielding lines corresponds to the K gate driving lines and the L source driving lines position. The self-capacitance in-cell touch display panel device with high sensing sensitivity according to claim 2, wherein each of the plurality of sensing electrodes has a polygonal shape, a circular shape, an elliptical shape, and a star shape. Wedge, radiator, triangle, pentagon, hexagon, octagon, rectangle or square. The self-capacitance in-cell touch display panel device with high sensing sensitivity as described in claim 3, wherein each of the plurality of sensing electrodes is one of the following: a transparent conductive film ITO material , zinc oxide tin film material, ETO material, nano silver, conductive polymer material, carbon nanotube material, and graphene material. A high-sensitivity self-capacitance in-cell touch display panel device includes: a first substrate; a common voltage layer; a second substrate, the first substrate and the second substrate are arranged in parallel pairs a display layer is sandwiched between the two substrates; a plurality of sensing electrodes, each of the plurality of sensing electrodes is formed by a grid of conductive metal material; a plurality of sensing electrode selection switches, the plurality of sensing Each of the sensing electrode selection switches of the electrode selection switch corresponds to at least one sensing electrode; a display control circuit for controlling display of the self-capacitance in-cell touch display panel device, the display control circuit is powered by a first power source Connected to a first grounding; a touch sensing control circuit is connected to the plurality of sensing electrode selection switches to control the touch sensing of the at least one sensing electrode corresponding to each of the sensing electrode selection switches, the touch sensing control circuit Powered by a second power source and connected to a second ground; and an amplifier having a gain greater than zero, connected to the touch sensing control a circuit and the common voltage layer, wherein the first power source and the first ground are different from the second power source and the second ground, and when detecting, the touch sensing control circuit corresponds to a sensing electrode selection switch An inductive signal sensed by the at least one sensing electrode is amplified by the amplifier having a gain greater than zero to generate an in-phase replica sensing signal and applied to the common voltage layer to reduce the at least one sensing corresponding to the sensing electrode selection switch. The capacitive effect between the electrode and the common voltage layer. The self-capacitance in-cell touch display panel device with high sensing sensitivity as described in claim 5, further comprising: a light shielding layer is disposed on a side of the first substrate facing the display layer, wherein the light shielding layer is formed by a plurality of light shielding lines, wherein the plurality of light shielding lines are disposed in a first direction and a second direction to form a plurality of a light-transmissive layer; a color filter layer on a side of the light-shielding layer facing the display layer; a first polarizing layer on a side of the first substrate facing away from the display layer; a thin film transistor layer The second substrate faces the display layer side, the thin film transistor layer has K gate driving lines and L source driving lines, and the K gate driving lines and the L source driving lines are respectively disposed on The first direction and the second direction are formed to form a plurality of pixel blocks, each pixel block having a corresponding pixel transistor and a pixel capacitor, according to a display pixel signal and a display driver a signal for driving the corresponding pixel transistor and the pixel capacitor to perform a display operation, wherein K and L are positive integers; and a second polarizing layer is located on the display layer opposite to the second substrate One side. The self-capacitance in-cell touch display panel device of the high sensing sensitivity according to claim 6 , wherein the position of the plurality of shading lines corresponds to the K gate driving lines and the L strips The location of the source drive line. The self-capacitance in-cell touch display panel device with high sensing sensitivity as described in claim 7 , wherein each of the plurality of metal grid sensing electrodes has a polygonal shape, a circular shape, an elliptical shape, and Star, wedge, radiator, triangle, pentagon, hexagon, octagon, rectangle or square. The self-capacitance in-cell touch display panel device with high sensing sensitivity as described in claim 8 wherein the conductive metal material is one of the following: chromium, bismuth, molybdenum, aluminum, silver, Copper, titanium, nickel, ruthenium, cobalt, tungsten, magnesium (Mg), calcium (Ca), potassium (K), lithium (Li), indium (In), alloys, lithium fluoride (LiF), magnesium fluoride ( MgF2), lithium oxide (Li2O). The high-sensitivity self-capacitance in-cell touch display panel device according to claim 9 , wherein the plurality of sensing electrodes are located on a side of the light shielding layer facing the display layer. The high-sensitivity self-capacitance in-cell touch display panel device according to claim 9 , wherein the plurality of sensing electrodes are located in the thin film transistor layer. A high-sensitivity self-capacitance in-cell touch display panel device includes: a first substrate; a second substrate, wherein the first substrate and the second substrate are arranged in a parallel pair to sandwich a display layer Between the two substrates; a cathode layer on the same side of the first substrate facing the display layer; a sensing electrode layer between the first substrate and the second substrate, the sensing electrode layer has a plurality of a sensing electrode; a plurality of sensing electrode selection switches, each sensing electrode selection switch of the plurality of sensing electrode selection switches corresponding to at least one sensing electrode; a display control circuit for controlling the self-capacitance in-cell touch display panel device The display control circuit is powered by a first power source and connected to a first ground; a touch sensing control circuit is connected to the plurality of sensing electrode selection switches to control the at least one corresponding to each of the sensing electrode selection switches The sensing electrode performs touch sensing, and the touch sensing control circuit is powered by a second power source and connected to a second ground; and a gain greater than zero Connecting the touch sensing control circuit and the cathode layer, wherein the first power source and the first ground are different from the second power source and the second ground, and when detecting, the touch sensing control circuit Select an induction electrode An inductive signal induced by the at least one sensing electrode corresponding to the switch is amplified by the amplifier having a gain greater than zero to generate an in-phase copying inductive signal and applied to the cathode layer to reduce the corresponding to the sensing electrode selection switch. A capacitive effect between the at least one sensing electrode and the cathode layer. The high-sensitivity self-capacitance in-cell touch display panel device according to claim 12, further comprising: a thin film transistor layer on a side of the second substrate facing the display layer, the film The transistor layer has K gate driving lines and L source driving lines, and the K gate driving lines and the L source driving lines are respectively disposed in the first direction and the second direction to form a plurality of paintings a pixel block, each pixel block having a corresponding pixel transistor and a pixel capacitor, according to a display pixel signal and a display driving signal to drive the corresponding pixel transistor and the pixel The capacitor, in turn, performs a display operation, where K and L are positive integers. The self-capacitance in-cell touch display panel device of the high-sensitivity sensitivity described in claim 13 further includes: a light shielding layer on a side of the first substrate facing the display layer, the shading The layer is composed of a plurality of light-shielding lines, the plurality of light-shielding lines are disposed in a first direction and a second direction to form a plurality of light-transmissive blocks; and a color filter layer is disposed on the light-shielding layer a display layer side, wherein the position of the plurality of light shielding lines corresponds to the positions of the K gate driving lines and the L source driving lines. The high-sensitivity self-capacitance in-cell touch display panel device according to claim 13 , wherein each of the plurality of sensing electrodes has a polygonal shape, a circular shape, an elliptical shape, and a star shape. Wedge, radiator, triangle, pentagon, hexagon, octagon, rectangle or square. A self-capacitance in-cell touch display panel device with high sensing sensitivity as described in claim 15 wherein each of the plurality of sensing electrodes The sensing electrodes are one of the following: transparent conductive film ITO material, zinc oxide tin film material, ETO material, nano silver, conductive polymer material, carbon nanotube material, and graphene material. The self-capacitance in-cell touch display panel device with high sensing sensitivity according to claim 15 , wherein the plurality of sensing electrodes are formed by a metal mesh made of a conductive metal material. The high-sensitivity self-capacitance in-cell touch display panel device according to claim 17, wherein the conductive metal material is one of the following: chromium, bismuth, molybdenum, aluminum, silver, Copper, titanium, nickel, ruthenium, cobalt, tungsten, magnesium (Mg), calcium (Ca), potassium (K), lithium (Li), indium (In), alloys, lithium fluoride (LiF), magnesium fluoride ( MgF2), lithium oxide (Li2O). The self-capacitance in-cell touch display panel device with high sensing sensitivity as described in claim 18, wherein the plurality of sensing electrodes are located on a side of a light shielding layer facing the display layer. The self-capacitance in-cell touch display panel device with high sensing sensitivity as described in claim 18, wherein the plurality of sensing electrodes are located in the thin film transistor layer. A high-sensitivity self-capacitance in-cell touch display panel device includes: a first substrate; a second substrate, wherein the first substrate and the second substrate are arranged in a parallel pair to sandwich a display layer Between the two substrates; an anode layer on the same side of the first substrate facing the display layer; a sensing electrode layer between the first substrate and the second substrate, the sensing electrode layer has a plurality of a sensing electrode; a plurality of sensing electrode selection switches, each of the plurality of sensing electrode selection switches corresponding to the at least one sensing electrode; a display control circuit for controlling display of the self-capacitance in-cell touch display panel device, the display control circuit is powered by a first power source and connected to a first ground; a touch sensing control circuit is coupled to the display a plurality of sensing electrode selection switches for controlling touch sensing by the at least one sensing electrode corresponding to each of the sensing electrode selection switches, wherein the touch sensing control circuit is powered by a second power source and connected to a second ground; and a gain An amplifier that is greater than zero is connected to the touch sensing control circuit and the anode layer, wherein the first power source and the first ground are different from the second power source and the second ground, and when detecting, the touch sensing The control circuit amplifies an induction signal induced by the at least one sensing electrode corresponding to the sensing electrode selection switch by an amplifier with a gain greater than zero to generate an in-phase reproduction sensing signal and apply to the anode layer to reduce the sensing The electrode selection switch corresponds to a capacitive effect between the at least one sensing electrode and the anode layer. The high-sensitivity self-capacitance in-cell touch display panel device according to claim 21, further comprising: a thin film transistor layer on a side of the second substrate facing the display layer, the film The transistor layer has K gate driving lines and L source driving lines, and the K gate driving lines and the L source driving lines are respectively disposed in the first direction and the second direction to form a plurality of paintings a pixel block, each pixel block having a corresponding pixel transistor and a pixel capacitor, according to a display pixel signal and a display driving signal to drive the corresponding pixel transistor and the pixel The capacitor, in turn, performs a display operation, where K and L are positive integers. The self-capacitance in-cell touch display panel device with high sensing sensitivity as described in claim 22, further comprising: a light shielding layer is disposed on a side of the first substrate facing the display layer, wherein the light shielding layer is formed by a plurality of light shielding lines, wherein the plurality of light shielding lines are disposed in a first direction and a second direction to form a plurality of a light-transmissive block; a color filter layer on a side of the light-shielding layer facing the display layer, wherein the plurality of light-shielding lines are located corresponding to the K gate drive lines and the L-sources The location of the drive line. The high-sensitivity self-capacitance in-cell touch display panel device according to claim 22, wherein each of the plurality of sensing electrodes has a polygonal shape, a circular shape, an elliptical shape, and a star shape. , wedge, radiator, pentagon, hexagon, octagon, rectangle or square. The high-sensitivity self-capacitance in-cell touch display panel device according to claim 24, wherein each of the plurality of sensing electrodes is one of the following: a transparent conductive film ITO material , zinc oxide tin film material, ETO material, nano silver, conductive polymer material, carbon nanotube material, and graphene material. The self-capacitance in-cell touch display panel device with high sensing sensitivity according to claim 24, wherein the plurality of sensing electrodes are formed by a metal mesh made of a conductive metal material. The self-capacitance in-cell touch display panel device with high sensing sensitivity as described in claim 26, wherein the conductive metal material or alloy material is one of the following: chromium, bismuth, molybdenum, aluminum , silver, copper, titanium, nickel, lanthanum, cobalt, tungsten, magnesium (Mg), calcium (Ca), potassium (K), lithium (Li), indium (In), alloys, lithium fluoride (LiF), fluorine Magnesium (MgF2), lithium oxide (Li2O). The self-capacitance in-cell touch display panel device with high sensing sensitivity as described in claim 27, wherein the plurality of sensing electrodes are located on a side of a light shielding layer facing the display layer. The high-sensitivity self-capacitance in-cell touch display panel device according to claim 27, wherein the plurality of sensing electrodes are located in the thin film transistor layer.